| Year |
Citation |
Score |
| 2019 |
Hossain MI, Hongsingthong A, Qarony W, Sichanugrist P, Konagai M, Salleo A, Knipp D, Tsang YH. Optics of perovskite solar cell front contacts. Acs Applied Materials & Interfaces. PMID 30900443 DOI: 10.1021/Acsami.8B16586 |
0.409 |
|
| 2019 |
Konagai M, Sasaki R. High voltage bifacial amorphous Si quintuple-junction solar cells for IoT devices Japanese Journal of Applied Physics. 58. DOI: 10.7567/1347-4065/Aafc98 |
0.394 |
|
| 2019 |
Kang D, Ryu J, Konagai M. High-Performance Amorphous Silicon Thin Film Solar Cells Prepared at 100 °C: Toward Flexible Building-Integrated Photovoltaics Electronic Materials Letters. 15: 623-629. DOI: 10.1007/s13391-019-00161-8 |
0.359 |
|
| 2017 |
Kato S, Yamazaki T, Kurokawa Y, Miyajima S, Konagai M. Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films. Nanoscale Research Letters. 12: 242. PMID 28363239 DOI: 10.1186/s11671-017-2006-z |
0.336 |
|
| 2017 |
Shirayanagi Y, Yashiki Y, Kato S, Konagai M. Preparation of axial-type wire-structure crystalline silicon solar cells Japanese Journal of Applied Physics. 56. DOI: 10.7567/Jjap.56.08Ma09 |
0.481 |
|
| 2017 |
Ishikawa R, Kurokawa Y, Miyajima S, Konagai M. Peeling process of thin-film solar cells using graphene layers Applied Physics Express. 10: 82301. DOI: 10.7567/Apex.10.082301 |
0.405 |
|
| 2017 |
Zhang H, Nakada K, Konagai M. Effects of epitaxial growth on the optimum condition of intrinsic amorphous silicon oxide buffer layers for silicon heterojunction solar cells Thin Solid Films. 628: 214-220. DOI: 10.1016/J.TSF.2017.03.040 |
0.312 |
|
| 2016 |
Tamang A, Hongsingthong A, Jovanov V, Sichanugrist P, Khan BA, Dewan R, Konagai M, Knipp D. Enhanced photon management in silicon thin film solar cells with different front and back interface texture. Scientific Reports. 6: 29639. PMID 27481226 DOI: 10.1038/Srep29639 |
0.418 |
|
| 2016 |
Muhammad AK, Ishikawa Y, Kita I, Tani A, Yano H, Fuyuki T, Konagai M. Investigation of crystallinity and planar defects in the Si nanowires grown by vapor-liquid-solid mode using indium catalyst for solar cell applications Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.01Ae03 |
0.382 |
|
| 2016 |
Niikura C, Chowdhury A, Janthong B, Sichanugrist P, Konagai M. High-efficiency p-i-n superstrate amorphous Si solar cells on SiOx periodic arrays of three-dimensional microstructure prepared by soft imprinting Applied Physics Express. 9. DOI: 10.7567/APEX.9.042301 |
0.384 |
|
| 2016 |
Chowdhury A, Kang DW, Sichanugrist P, Konagai M. Performance improvement of amorphous silicon solar cell by SiOx:H based multiple antireflection coatings Thin Solid Films. 616: 461-465. DOI: 10.1016/j.tsf.2016.09.007 |
0.318 |
|
| 2016 |
Tamang A, Hongsingthong A, Sichanugrist P, Jovanov V, Gebrewold HT, Konagai M, Knipp D. On the potential of light trapping in multiscale textured thin film solar cells Solar Energy Materials and Solar Cells. 144: 300-308. DOI: 10.1016/J.Solmat.2015.09.008 |
0.416 |
|
| 2016 |
Kang DW, Sichanugrist P, Janthong B, Khan MA, Niikura C, Konagai M. Development of wide band gap p-a-SiOxCy:H using additional trimethylboron as carbon source gas Electronic Materials Letters. 12: 462-467. DOI: 10.1007/s13391-016-4007-y |
0.383 |
|
| 2016 |
Kang DW, Sichanugrist P, Konagai M. Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system Electronic Materials Letters. 12: 451-455. DOI: 10.1007/S13391-016-4005-0 |
0.427 |
|
| 2015 |
Kanematsu D, Yata S, Terakawa A, Tanaka M, Konagai M. Effective light trapping by modulated quantum structures for Si nanowire/wall solar cells Japanese Journal of Applied Physics. 54: 102301. DOI: 10.7567/Jjap.54.102301 |
0.389 |
|
| 2015 |
Nguyen VH, Hoshi Y, Usami N, Konagai M. Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template Japanese Journal of Applied Physics. 54: 95003. DOI: 10.7567/Jjap.54.095003 |
0.354 |
|
| 2015 |
Urabe S, Irikawa J, Konagai M, Miyajima S. Characterization of laser transferred contact through aluminum oxide passivation layer Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.08Kd02 |
0.328 |
|
| 2015 |
Sadono A, Hino M, Ichikawa M, Yamamoto K, Kurokawa Y, Konagai M, Yamada A. Flexible Cu(In,Ga)Se2 solar cells fabricated using a polyimide-coated soda-lime glass substrate Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.08Kc16 |
0.421 |
|
| 2015 |
Itoh T, Katayama R, Yamakawa K, Matsui K, Saito M, Sugiyama S, Sichanugrist P, Nonomura S, Konagai M. Electrical characterization of hydrogenated amorphous silicon oxide films Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.08Kb11 |
0.401 |
|
| 2015 |
Meng L, Miyajima S, Konagai M. Effect of Al doping concentration on the electrical and optical properties of sol–gel derived Zn0.87Mg0.13O thin film Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.08Kb09 |
0.391 |
|
| 2015 |
Kanematsu D, Yata S, Terakawa A, Tanaka M, Konagai M. Photovoltaic properties of axial-junction silicon nanowire solar cells with integrated arrays Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.08Ka09 |
0.378 |
|
| 2015 |
Nakada K, Miyajima S, Konagai M. Application of n-type microcrystalline silicon oxide as back reflector of crystalline silicon heterojunction solar cells Japanese Journal of Applied Physics. 54: 82301. DOI: 10.7567/Jjap.54.082301 |
0.412 |
|
| 2015 |
Nakada K, Irikawa J, Miyajima S, Konagai M. Silicon heterojunction solar cells with high surface passivation quality realized using amorphous silicon oxide films with epitaxial phase Japanese Journal of Applied Physics. 54: 52303. DOI: 10.7567/Jjap.54.052303 |
0.455 |
|
| 2015 |
Ajmal Khan M, Ishikawa Y, Kita I, Fukunaga K, Fuyuki T, Konagai M. Control of verticality and (111) orientation of In-catalyzed silicon nanowires grown in the vapour-liquid-solid mode for nanoscale device applications Journal of Materials Chemistry C. 3: 11577-11580. DOI: 10.1039/C5Tc01338K |
0.374 |
|
| 2015 |
Kang DW, Chowdhury A, Sichanugrist P, Konagai M. Light management of a-SiOx:H thin film solar cells with hydrogen-reduced p+ buffer at TiO2/p-layer interface Solar Energy Materials and Solar Cells. 143: 296-301. DOI: 10.1016/J.Solmat.2015.07.016 |
0.462 |
|
| 2015 |
Kang DW, Chowdhury A, Sichanugrist P, Abe Y, Konishi H, Tsuda Y, Shinagawa T, Tokioka H, Fuchigami H, Konagai M. Highly transparent Zn1-xMgxO/ITO multilayer for window of thin film solar cells Current Applied Physics. 15: 1022-1026. DOI: 10.1016/j.cap.2015.05.017 |
0.34 |
|
| 2015 |
Zhang H, Nakada K, Miyajima S, Konagai M. High-performance a-Si1-xOx:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si1-xOx:H stack buffer layer Physica Status Solidi-Rapid Research Letters. 9: 225-229. DOI: 10.1002/Pssr.201409546 |
0.389 |
|
| 2015 |
Ishikawa R, Kurokawa Y, Miyajima S, Konagai M. Graphene transparent electrode for thin-film solar cells Physica Status Solidi (C). 12: 777-780. DOI: 10.1002/Pssc.201400320 |
0.389 |
|
| 2014 |
Yamada S, Kurokawa Y, Miyajima S, Konagai M. Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer. Nanoscale Research Letters. 9: 246. PMID 24936160 DOI: 10.1186/1556-276X-9-246 |
0.436 |
|
| 2014 |
Yamada S, Kurokawa Y, Miyajima S, Konagai M. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix. Nanoscale Research Letters. 9: 72. PMID 24521208 DOI: 10.1186/1556-276X-9-72 |
0.438 |
|
| 2014 |
Nakada K, Miyajima S, Konagai M. Amorphous silicon oxide passivation films for silicon heterojunction solar cells studied by hydrogen evolution Japanese Journal of Applied Physics. 53: 04ER13. DOI: 10.7567/JJAP.53.04ER13 |
0.343 |
|
| 2014 |
Ishikawa R, Kato S, Yamazaki T, Kurokawa Y, Miyajima S, Konagai M. Solid-phase crystallization of amorphous silicon nanowire array and optical properties Japanese Journal of Applied Physics. 53. DOI: 10.7567/Jjap.53.02Be09 |
0.475 |
|
| 2014 |
Kang D, Sichanugrist P, Konagai M. Novel application of MgF2as a back reflector in a-SiOx:H thin-film solar cells Applied Physics Express. 7: 082302. DOI: 10.7567/APEX.7.082302 |
0.309 |
|
| 2014 |
Abe Y, Kagei T, Sichanugrist P, Konagai M. Development of Double-Textured ZnO:B Substrates for Improving Microcrystalline Silicon Solar Cell Performance Ieee Journal of Photovoltaics. 4: 1374-1379. DOI: 10.1109/Jphotov.2014.2358085 |
0.384 |
|
| 2014 |
Tamang A, Hongsingthong A, Sichanugrist P, Jovanov V, Konagai M, Knipp D. Light-Trapping and Interface Morphologies of Amorphous Silicon Solar Cells on Multiscale Surface Textured Substrates Ieee Journal of Photovoltaics. 4: 16-21. DOI: 10.1109/Jphotov.2013.2280020 |
0.412 |
|
| 2014 |
Isshiki M, Sichanugrist P, Abe Y, Oyama T, Odaka H, Konagai M. New method to measure whole-wavelength transmittance of TCO substrates for thin-film silicon solar cells Current Applied Physics. 14: 1813-1818. DOI: 10.1016/J.Cap.2014.10.021 |
0.414 |
|
| 2013 |
Ishikawa R, Ko PJ, Bando M, Kurokawa Y, Sandhu A, Konagai M. Radical-assisted chemical doping for chemically derived graphene. Nanoscale Research Letters. 8: 534. PMID 24355062 DOI: 10.1186/1556-276X-8-534 |
0.311 |
|
| 2013 |
Jovanov V, Palanchoke U, Magnus P, Stiebig H, Hüpkes J, Sichanugrist P, Konagai M, Wiesendanger S, Rockstuhl C, Knipp D. Light trapping in periodically textured amorphous silicon thin film solar cells using realistic interface morphologies. Optics Express. 21: A595-606. PMID 24104487 DOI: 10.1364/Oe.21.00A595 |
0.455 |
|
| 2013 |
Yamada S, Kurokawa Y, Miyajima S, Konagai M. Improvement of Electrical Properties of Silicon Quantum Dot Superlattice Solar Cells with Diffusion Barrier Layers Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.04Cr02 |
0.427 |
|
| 2013 |
Isshiki M, Ishikawa Y, Ikeda T, Oyama T, Odaka H, Sichanugrist P, Konagai M. SnO 2 :F with Very High Haze Value and Transmittance in Near Infrared Wavelength for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells Mrs Proceedings. 1536: 63-69. DOI: 10.1557/Opl.2013.744 |
0.445 |
|
| 2013 |
Kasashima S, Moriya Y, Sichanugrist P, Konagai M. Triple-Junction Thin-Film Silicon Solar Cells on W-Textured ZnO for Applications to Low-Concentration Photovoltaics Mrs Proceedings. 1493: 219-224. DOI: 10.1557/OPL.2012.1708 |
0.336 |
|
| 2013 |
Ishikawa R, Bando M, Kurokawa Y, Sandhu A, Konagai M. Layer-by-layer assembled transparent conductive graphene films for solar cells application Materials Research Society Symposium Proceedings. 1451: 75-81. DOI: 10.1557/Opl.2012.1225 |
0.41 |
|
| 2013 |
Jovanov V, Palanchoke U, Magnus P, Stiebig H, Hüpkes J, Sichanugrist P, Konagai M, Wiesendanger S, Rockstuhl C, Knipp D. Light trapping in periodically textured amorphous silicon thin film solar cells using realistic interface morphologies Optics Express. 21: A595-A606. DOI: 10.1364/OE.21.00A595 |
0.348 |
|
| 2013 |
Hongsingthong A, Krajangsang T, Limmanee A, Sriprapha K, Sritharathikhun J, Konagai M. Development of textured ZnO-coated low-cost glass substrate with very high haze ratio for silicon-based thin film solar cells Thin Solid Films. 537: 291-295. DOI: 10.1016/J.Tsf.2013.04.138 |
0.505 |
|
| 2013 |
Janthong B, Moriya Y, Hongsingthong A, Sichanugrist P, Konagai M. Management of light-trapping effect for a-Si:H/µc-Si:H tandem solar cells using novel substrates, based on MOCVD ZnO and etched white glass Solar Energy Materials and Solar Cells. 119: 209-213. DOI: 10.1016/J.Solmat.2013.06.045 |
0.47 |
|
| 2013 |
Arivanandhan M, Gotoh R, Fujiwara K, Uda S, Hayakawa Y, Konagai M. Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals Scripta Materialia. 69: 686-689. DOI: 10.1016/J.Scriptamat.2013.07.033 |
0.412 |
|
| 2013 |
Arivanandhan M, Raira G, Fujiwara K, Uda S, Hayakawa Y, Konagai M. Germanium‐doped Czochralski silicon: a novel material for solar cells Physica Status Solidi (C). 10: 1746-1749. DOI: 10.1002/Pssc.201300394 |
0.381 |
|
| 2012 |
Hamashita D, Kurokawa Y, Konagai M. Estimation of the crystallinity of P-type hydrogenated nanocrystalline cubic silicon carbide by conductive atomic force microscopy Materials Research Society Symposium Proceedings. 1426: 347-352. DOI: 10.1557/Opl.2012.837 |
0.425 |
|
| 2012 |
Kurokawa Y, Kato S, Watanabe Y, Yamada A, Konagai M, Ohta Y, Niwa Y, Hirota M. Effect of the Quantum Size Effect on the Performance of Solar Cells with a Silicon Nanowire Array Embedded in SiO 2 Mrs Proceedings. 1439: 145-150. DOI: 10.1557/Opl.2012.1154 |
0.379 |
|
| 2012 |
Ishikawa R, Bando M, Wada H, Kurokawa Y, Sandhu A, Konagai M. Layer-by-layer assembled transparent conductive graphene films for silicon thin-film solar cells Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.11Pf01 |
0.418 |
|
| 2012 |
Kurokawa Y, Kato S, Watanabe Y, Yamada A, Konagai M, Ohta Y, Niwa Y, Hirota M. Numerical approach to the investigation of performance of silicon nanowire solar cells embedded in a SiO2 matrix Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.11Pe12 |
0.401 |
|
| 2012 |
Kurokawa Y, Yamada S, Konagai M. Numerical Approach to the Performance of Silicon Quantum Dots Superlattice Solar Cells Taking into Account the Quantum Effect Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.10Ne09 |
0.368 |
|
| 2012 |
Janthong B, Hongsingthong A, Moriya Y, Sichanugrist P, Wronski CR, Konagai M. Optical improvement of ZnO-coated glass with new refractive-index matching layer inserted at glass/ZnO interface Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.10Nb14 |
0.45 |
|
| 2012 |
Kuramochi H, Akiike R, Iigusa H, Tamano K, Utsumi K, Shibutami T, Sichanugrist P, Konagai M. Development of Novel Aluminum-Doped Zinc Oxide Film and Its Application to Solar Cells Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.10Nb13 |
0.475 |
|
| 2012 |
Hongsingthong A, Aino A, Sichanugrist P, Konagai M, Kuramochi H, Akiike R, Iigusa H, Utsumi K, Shibutami T. Development of Novel Al-Doped Zinc Oxide Films Fabricated on Etched Glass and Their Application to Solar Cells Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.10Nb09 |
0.493 |
|
| 2012 |
Hongsingthong A, Wada H, Moriya Y, Sichanugrist P, Konagai M. Development of Boron-Doped ZnO Films with Novel Thin Zn-Rich Film and Their Application to Solar Cells Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.10Nb03 |
0.506 |
|
| 2012 |
Isshiki M, Ikeda T, Okubo J, Oyama T, Shidoji E, Odaka H, Sichanugrist P, Konagai M. Improving Mobility of F-Doped SnO2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition Japanese Journal of Applied Physics. 51: 95801. DOI: 10.1143/Jjap.51.095801 |
0.441 |
|
| 2012 |
Krajangsang T, Hiza S, Hayashi T, Yunaz IA, Hongsingthong A, Miyajima S, Konagai M. Quantitative Analysis of Surface Morphology of Boron-Doped Zinc Oxide for Microcrystalline Silicon Solar Cells Japanese Journal of Applied Physics. 51: 51101. DOI: 10.1143/Jjap.51.051101 |
0.485 |
|
| 2012 |
Arivanandhan M, Gotoh R, Watahiki T, Fujiwara K, Hayakawa Y, Uda S, Konagai M. The impact of Ge codoping on the enhancement of photovoltaic characteristics of B-doped Czochralski grown Si crystal Journal of Applied Physics. 111: 43707. DOI: 10.1063/1.3687935 |
0.381 |
|
| 2012 |
Janthong B, Hongsingthong A, Krajangsang T, Zhang L, Sichanugrist P, Konagai M. Novel a-Si:H/μc-Si:H tandem cell with lower optical loss Journal of Non-Crystalline Solids. 358: 2478-2481. DOI: 10.1016/J.Jnoncrysol.2012.01.060 |
0.402 |
|
| 2012 |
Kim DY, Yoshihara T, Porponth S, Konagai M. Effect of an inter-electrode distance in VHF-PECVD and gas flow ratios on a-SiGeC:H films and solar cells by using monomethyl germane as a germanium source Journal of Non-Crystalline Solids. 358: 2272-2276. DOI: 10.1016/J.Jnoncrysol.2012.01.018 |
0.419 |
|
| 2012 |
Krajangsang T, Kasashima S, Hongsingthong A, Sichanugrist P, Konagai M. Effect of p-μc-Si1−xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells under light concentration Current Applied Physics. 12: 515-520. DOI: 10.1016/J.Cap.2011.08.011 |
0.428 |
|
| 2011 |
Inthisang S, Krajangsang T, Sichanugrist P, Watahiki T, Miyajima S, Yamada A, Konagai M. Effect of Hydrogen Dilution on the Metastability of Hydrogenated Amorphous Silicon Oxide Solar Cells Japanese Journal of Applied Physics. 50: 111401. DOI: 10.1143/Jjap.50.111401 |
0.453 |
|
| 2011 |
Zhang Y, Ito M, Tamura T, Yamada A, Konagai M. Improvement of Film Quality in CuInSe2 Thin Films Fabricated by a Non-Vacuum, Nanoparticle-Based Approach Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.04Dp12 |
0.319 |
|
| 2011 |
Hoshina Y, Shimizu M, Yamada A, Konagai M. Numerical Analysis of a Solar Cell with Tensile-Strained Ge as a Novel Narrow-Band-Gap Absorber Japanese Journal of Applied Physics. 50: 04DP08. DOI: 10.1143/Jjap.50.04Dp08 |
0.334 |
|
| 2011 |
Konagai M. Present Status and Future Prospects of Silicon Thin-Film Solar Cells Japanese Journal of Applied Physics. 50: 30001. DOI: 10.1143/Jjap.50.030001 |
0.431 |
|
| 2011 |
Yamada S, Kurokawa Y, Konagai M. High thermostable and conductive niobium doped titanium oxide for the application to a diffusion barrier layer of silicon quantum dot superlattice solar cell structure Conference Record of the Ieee Photovoltaic Specialists Conference. 002113-002116. DOI: 10.1109/PVSC.2011.6186370 |
0.388 |
|
| 2011 |
Oonishi S, Kawamura M, Takano N, Hashimoto D, Yamada A, Konagai M. Characterization of Cu(InGa)Se2 grain boundary properties by electron- and tip-probe methods Thin Solid Films. 519: 7347-7350. DOI: 10.1016/J.Tsf.2010.12.223 |
0.31 |
|
| 2011 |
Yunaz IA, Nagashima H, Hamashita D, Miyajima S, Konagai M. Wide-gap a-Si1−xCx:H solar cells with high light-induced stability for multijunction structure applications Solar Energy Materials and Solar Cells. 95: 107-110. DOI: 10.1016/J.Solmat.2010.04.039 |
0.389 |
|
| 2011 |
Hongsingthong A, Yunaz IA, Miyajima S, Konagai M. Preparation of ZnO thin films using MOCVD technique with D2O/H2O gas mixture for use as TCO in silicon-based thin film solar cells Solar Energy Materials and Solar Cells. 95: 171-174. DOI: 10.1016/J.Solmat.2010.04.025 |
0.398 |
|
| 2011 |
Inthisang S, Krajangsang T, Yunaz IA, Yamada A, Konagai M, Wronski CR. Fabrication of high open-circuit voltage a-Si1-xOx:H solar cells by using p-a-Si1-xOx:H as window layer Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2990-2993. DOI: 10.1002/Pssc.201001145 |
0.455 |
|
| 2010 |
Zhang Y, Ito M, Yamada A, Konagai M. Improvement of Film Quality in CIS Thin Films Fabricated by Non-vacuum, Nanoparticles-based Approach The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.P-14-8 |
0.372 |
|
| 2010 |
Hoshina Y, Shimizu M, Yamada A, Konagai M. Numerical Analysis of a Solar Cell with a Tensile-Strained Ge as a Novel Narrow Band Gap Absorber The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.K-5-4 |
0.307 |
|
| 2010 |
Kim DY, Yunaz IA, Kasashima S, Miyajima S, Konagai M. Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique Mrs Proceedings. 1245. DOI: 10.1557/PROC-1245-A07-07 |
0.404 |
|
| 2010 |
Kawamura M, Yamada T, Suyama N, Yamada A, Konagai M. Grain Boundary Evaluation of Cu(In1-xGax)Se2 Solar Cells Japanese Journal of Applied Physics. 49: 62301. DOI: 10.1143/Jjap.49.062301 |
0.324 |
|
| 2010 |
Hongsingthong A, Krajangsang T, Yunaz IA, Miyajima S, Konagai M. ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells Applied Physics Express. 3: 51102. DOI: 10.1143/Apex.3.051102 |
0.484 |
|
| 2010 |
Wang WL, Lin H, Zhang J, Li X, Yamada A, Konagai M, Li JB. Experimental and simulation analysis of the dye sensitized solar cell/Cu(In,Ga)Se2 solar cell tandem structure Solar Energy Materials and Solar Cells. 94: 1753-1758. DOI: 10.1016/J.Solmat.2010.05.041 |
0.323 |
|
| 2010 |
Yokoyama D, Minegishi T, Maeda K, Katayama M, Kubota J, Yamada A, Konagai M, Domen K. Photoelectrochemical water splitting using a Cu(In,Ga)Se2 thin film Electrochemistry Communications. 12: 851-853. DOI: 10.1016/J.Elecom.2010.04.004 |
0.36 |
|
| 2010 |
Krajangsang T, Yunaz IA, Miyajima S, Konagai M. Effect of p-μc-Si1−xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells Current Applied Physics. 10. DOI: 10.1016/J.Cap.2010.02.016 |
0.42 |
|
| 2010 |
Kurokawa Y, Yamada S, Miyajima S, Yamada A, Konagai M. Effects of oxygen addition on electrical properties of silicon quantum dots/amorphous silicon carbide superlattice Current Applied Physics. 10. DOI: 10.1016/J.Cap.2010.02.014 |
0.491 |
|
| 2010 |
Rattanapan S, Yamamoto H, Miyajima S, Sato T, Konagai M. Hydrogen plasma treatment for improving bulk passivation quality of c-Si solar cells Current Applied Physics. 10. DOI: 10.1016/J.Cap.2009.11.021 |
0.396 |
|
| 2009 |
Kubo J, Matsuo Y, Wada T, Yamada A, Konagai M. Fabrication of Cu(In,Ga)Se 2 Films by a Combination of Mechanochemical Synthesis, Wet Bead Milling, and a Screen Printing/sintering Process Mrs Proceedings. 1165. DOI: 10.1557/Proc-1165-M05-13 |
0.425 |
|
| 2009 |
Inthisang S, Sriprapha K, Miyajima S, Yamada A, Konagai M. Hydrogenated Amorphous Silicon Oxide Solar Cells Fabricated near the Phase Transition between Amorphous and Microcrystalline Structures Japanese Journal of Applied Physics. 48: 122402. DOI: 10.1143/Jjap.48.122402 |
0.488 |
|
| 2009 |
Hoshina Y, Yamada A, Konagai M. Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy Japanese Journal of Applied Physics. 48: 111102. DOI: 10.1143/Jjap.48.111102 |
0.385 |
|
| 2009 |
Yunaz IA, Hashizume K, Miyajima S, Yamada A, Konagai M. Fabrication of amorphous silicon carbide films using VHF-PECVD for triple-junction thin-film solar cell applications Solar Energy Materials and Solar Cells. 93: 1056-1061. DOI: 10.1016/J.SOLMAT.2008.11.048 |
0.375 |
|
| 2009 |
Li Z, Nishijima M, Yamada A, Konagai M. Growth of Cu(In,Ga)Se2 thin films using ionization Ga source and application for solar cells Physica Status Solidi (C). 6: 1273-1277. DOI: 10.1002/Pssc.200881180 |
0.4 |
|
| 2008 |
Kurokawa Y, Miyajima S, Yamada A, Konagai M. Size-Controlled Silicon Quantum Dots Superlattice for Thin-Film Solar Cell Applications Mrs Proceedings. 1101. DOI: 10.1557/Proc-1101-Kk12-01 |
0.397 |
|
| 2008 |
Limmanee A, Sugiura T, Yamamoto H, Sato T, Miyajima S, Yamada A, Konagai M. Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells Japanese Journal of Applied Physics. 47: 8796-8798. DOI: 10.1143/JJAP.47.8796 |
0.34 |
|
| 2008 |
Hiza S, Yamada A, Konagai M. Characterization of Defects-Location in Hydrogenated Microcrystalline Silicon Thin Films and Its Influence on Solar Cell Performance Japanese Journal of Applied Physics. 47: 6222-6227. DOI: 10.1143/Jjap.47.6222 |
0.486 |
|
| 2008 |
Sriprapha K, Myong SY, Yamada A, Konagai M. Temperature dependence of protocrystalline silicon/microcrystalline silicon double-junction solar cells Japanese Journal of Applied Physics. 47: 1496-1500. DOI: 10.1143/JJAP.47.1496 |
0.334 |
|
| 2008 |
Sriprapha K, Inthisang S, Myong SY, Miyajima S, Yamada A, Sichanugrist P, Konagai M. Development of amorphous silicon-based thin-film solar cells with low-temperature coefficient Proceedings of Spie - the International Society For Optical Engineering. 7045. DOI: 10.1117/12.792521 |
0.317 |
|
| 2008 |
Banerjee C, Sritharathikhun J, Yamada A, Konagai M. Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter Journal of Physics D: Applied Physics. 41: 185107. DOI: 10.1088/0022-3727/41/18/185107 |
0.346 |
|
| 2008 |
Limmanee A, Otsubo M, Sugiura T, Sato T, Miyajima S, Yamada A, Konagai M. Effect of thermal annealing on the properties of a-SiCN:H films by hot wire chemical vapor deposition using hexamethyldisilazane Thin Solid Films. 516: 652-655. DOI: 10.1016/J.TSF.2007.06.217 |
0.325 |
|
| 2008 |
Myong SY, Sriprapha K, Yashiki Y, Miyajima S, Yamada A, Konagai M. Silicon-based thin-film solar cells fabricated near the phase boundary by VHF PECVD technique Solar Energy Materials and Solar Cells. 92: 639-645. DOI: 10.1016/j.solmat.2008.01.010 |
0.344 |
|
| 2008 |
Miyajima S, Sawamura M, Yamada A, Konagai M. Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature Journal of Non-Crystalline Solids. 354: 2350-2354. DOI: 10.1016/J.JNONCRYSOL.2007.09.085 |
0.361 |
|
| 2007 |
Yamada A, Meng F, Chiba Y, Kawamura M, Konagai M. Zn-Based Buffer Layer and High-Quality CIGS Films Grown by a Novel Method Mrs Proceedings. 1012. DOI: 10.1557/PROC-1012-Y02-06 |
0.303 |
|
| 2007 |
Sriprapha K, Yunaz IA, Hiza S, Ahn KH, Myong SY, Yamada A, Konagai M. Temperature Dependence of Silicon-based Thin Film Solar Cells on Their Intrinsic Absorber Mrs Proceedings. 989. DOI: 10.1557/PROC-0989-A24-02 |
0.333 |
|
| 2007 |
YASHIKI Y, KOUKETSU S, MIYAJIMA S, YAMADA A, KONAGAI M. Effect of Boron Doping on Microcrystalline Germanium Carbon Thin Films Mrs Proceedings. 989. DOI: 10.1557/PROC-0989-A05-04 |
0.308 |
|
| 2007 |
Limmanee A, Otsubo M, Sugiura T, Sato T, Miyajima S, Yamada A, Konagai M. Effects of Nitrogen Addition on the Properties of a-SiCN:H Films Using Hexamethyldisilazane Mrs Proceedings. 989. DOI: 10.1557/PROC-0989-A04-02 |
0.386 |
|
| 2007 |
Sriprapha K, Yunaz IA, Myong SY, Yamada A, Konagai M. Temperature dependence of Si-based thin-film solar cells fabricated on amorphous to microcrystalline silicon transition phase Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 7212-7216. DOI: 10.1143/JJAP.46.7212 |
0.345 |
|
| 2007 |
Limmanee A, Otsubo M, Sato T, Miyajima S, Yamada A, Konagai M. Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications Japanese Journal of Applied Physics. 46: 56-59. DOI: 10.1143/JJAP.46.56 |
0.37 |
|
| 2007 |
Sritharathikhun J, Banerjee C, Otsubo M, Sugiura T, Yamamoto H, Sato T, Limmanee A, Yamada A, Konagai M. Surface Passivation of Crystalline and Polycrystalline Silicon Using Hydrogenated Amorphous Silicon Oxide Film Japanese Journal of Applied Physics. 46: 3296-3300. DOI: 10.1143/JJAP.46.3296 |
0.312 |
|
| 2007 |
Yashiki Y, Miyajima S, Yamada A, Konagai M. Preparation of Microcrystalline Germanium Carbon Thin Films by Hot-Wire Chemical Vapor Deposition Using Dimethylgermane Japanese Journal of Applied Physics. 46: 2865-2868. DOI: 10.1143/JJAP.46.2865 |
0.305 |
|
| 2007 |
Hiza S, Yamada A, Konagai M. Low-temperature Deposition of Hydrogenated Microcrystalline Silicon Thin Films by Photochemical Vapor Deposition Technique and Their Application to Thin Film Solar Cells Japanese Journal of Applied Physics. 46: 1427-1431. DOI: 10.1143/JJAP.46.1427 |
0.372 |
|
| 2007 |
Miyajima S, Yamada A, Konagai M. Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures Japanese Journal of Applied Physics. 46: 1415-1426. DOI: 10.1143/JJAP.46.1415 |
0.356 |
|
| 2007 |
Yunaz IA, Sriprapha K, Hiza S, Yamada A, Konagai M. Effects of Temperature and Spectral Irradiance on Performance of Silicon-Based Thin Film Multijunction Solar Cells Japanese Journal of Applied Physics. 46: 1398-1403. DOI: 10.1143/JJAP.46.1398 |
0.349 |
|
| 2007 |
Banerjee C, Narayanan KL, Haga K, Sritharathikhun J, Miyajima S, Yamada A, Konagai M. Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition Japanese Journal of Applied Physics. 46: 1-6. DOI: 10.1143/JJAP.46.1 |
0.319 |
|
| 2007 |
Sriprapha K, Yunaz IA, Myong SY, Yamada A, Konagai M. Temperature dependence of Si-based thin film solar cells near phase boundary Proceedings of Spie - the International Society For Optical Engineering. 6651. DOI: 10.1117/12.733451 |
0.332 |
|
| 2007 |
Myong SY, Sriprapha K, Miyajima S, Konagai M, Yamada A. High efficiency protocrystalline silicon/microcrystalline silicon tandem cell with zinc oxide intermediate layer Applied Physics Letters. 90. DOI: 10.1063/1.2752736 |
0.38 |
|
| 2006 |
Miyajima S, Yamada A, Konagai M. Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A04-01 |
0.428 |
|
| 2006 |
Miyajima S, Haga K, Yamada A, Konagai M. Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications Japanese Journal of Applied Physics. 45: L432-L434. DOI: 10.1143/JJAP.45.L432 |
0.355 |
|
| 2006 |
Hiza S, Matsuda W, Yamada A, Konagai M. Effect of the Structural Change of Hydrogenated Microcrystalline Silicon Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Japanese Journal of Applied Physics. 45: 5671-5674. DOI: 10.1143/JJAP.45.5671 |
0.337 |
|
| 2006 |
Miyazaki H, Mikami R, Yamada A, Konagai M. Chemical-Bath-Deposited ZnO and Mg(OH)2 Buffer Layer for Cu(InGa)Se2 Solar Cells Japanese Journal of Applied Physics. 45: 2618-2620. DOI: 10.1143/Jjap.45.2618 |
0.477 |
|
| 2006 |
Myong SY, Kwon SW, Kondo M, Konagai M, Lim KS. Development of a rapidly stabilized protocrystalline silicon multilayer solar cell Semiconductor Science and Technology. 21. DOI: 10.1088/0268-1242/21/2/L02 |
0.444 |
|
| 2006 |
Myong SY, Lim KS, Konagai M. Effect of hydrogen dilution on carrier transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys Applied Physics Letters. 88. DOI: 10.1063/1.2177641 |
0.432 |
|
| 2006 |
Yashiki Y, Miyajima S, Yamada A, Konagai M. Deposition and characterization of μc-Ge1−xCx thin films grown by hot-wire chemical vapor deposition using organo-germane Thin Solid Films. 501: 202-205. DOI: 10.1016/J.Tsf.2005.07.174 |
0.424 |
|
| 2006 |
Miyajima S, Yamada A, Konagai M. Aluminum-doped hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD Thin Solid Films. 501: 186-189. DOI: 10.1016/J.TSF.2005.07.164 |
0.38 |
|
| 2005 |
Ming Q, Shirakashi J, Tokumitsu E, Nozaki S, Konagai M, Takahashi K, Jin-Sheng L. MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs Acta Physica Sinica. 42: 1956-1962. DOI: 10.7498/Aps.42.1956 |
0.348 |
|
| 2005 |
Kim KH, Larina LL, Yoon KH, Konagai M, Ahn BT. Growth of an In-x(OOH,S)(y) buffer layer and its application to Cu(In,Ga)(Se,S)(2) solar cells Materials Science Forum. 1681-1684. DOI: 10.4028/Www.Scientific.Net/Msf.475-479.1681 |
0.402 |
|
| 2005 |
Miyajima S, Yamada A, Konagai M. Annealing characteristics of Al-doped hydrogenated microcrystalline cubic silicon carbide films Mrs Proceedings. 862. DOI: 10.1557/PROC-862-A24.5 |
0.385 |
|
| 2005 |
Shevaleevskiy OI, Myong SY, Lim KS, Miyajima S, Konagai M. Structural defects and electrical conductivity in nanocrystalline SiC:H films doped with boron and grown by photostimulated chemical-vapor deposition Fizika I Tekhnika Poluprovodnikov. 39: 741-743. DOI: 10.1134/1.1944863 |
0.443 |
|
| 2005 |
Myong SY, Kwon SW, Lim KS, Konagai M. Highly stabilized protocrystalline silicon multilayer solar cell using a silicon-carbide double p-layer structure Solar Energy Materials and Solar Cells. 85: 133-140. DOI: 10.1016/J.Solmat.2004.04.009 |
0.44 |
|
| 2005 |
Myong SY, Shevaleevskiy O, Lim KS, Miyajima S, Konagai M. Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique Journal of Non-Crystalline Solids. 351: 89-92. DOI: 10.1016/j.jnoncrysol.2004.09.019 |
0.315 |
|
| 2004 |
Miyajima S, Yamada A, Konagai M. Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films Materials Science Forum. 317-320. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.317 |
0.447 |
|
| 2004 |
Larina L, Kim KH, Yoon KH, Konagai M, Ahn BT. Growth and characterization of an In-based buffer layer by CBD for Cu(In,Ga)Se2 solar cells Journal of the Electrochemical Society. 151: C789-C792. DOI: 10.1149/1.1814035 |
0.457 |
|
| 2004 |
Miyajima S, Yamada A, Konagai M. Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature Japanese Journal of Applied Physics. 43: L1190-L1192. DOI: 10.1143/JJAP.43.L1190 |
0.36 |
|
| 2004 |
Ide Y, Saito Y, Yamada A, Konagai M. Intrinsic Microcrystalline Silicon Thin Films Prepared by Hot-Wire Cell Method and Their Application to Solar Cells Japanese Journal of Applied Physics. 43: 7953-7959. DOI: 10.1143/JJAP.43.7953 |
0.334 |
|
| 2004 |
Miyazaki H, Mikami R, Yamada A, Konagai M. Efficiency Improvement of Cu(InGa)Se2 Thin Film Solar Cells with a High Ga Composition Using Rapid Thermal Annealing Japanese Journal of Applied Physics. 43: 4244-4247. DOI: 10.1143/Jjap.43.4244 |
0.393 |
|
| 2004 |
Ide Y, Saito Y, Yamada A, Konagai M. 2-Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method Japanese Journal of Applied Physics. 43: 2419-2424. DOI: 10.1143/JJAP.43.2419 |
0.316 |
|
| 2004 |
Watahiki T, Ishihara H, Abe K, Yamada A, Konagai M. Characterization and comparison of strained Si1-yCymetal oxide semiconductor field-effect transistor grown by gas-source molecular beam epitaxy and Hot Wire Cell method Japanese Journal of Applied Physics. 43: 1882-1885. DOI: 10.1143/Jjap.43.1882 |
0.459 |
|
| 2004 |
Myong SY, Kim TH, Lim KS, Kim KH, Ahn BT, Miyajima S, Konagai M. Low-temperature preparation of boron-doped nanocrystalline SiC:H films using mercury-sensitized photo-CVD technique Solar Energy Materials and Solar Cells. 81: 485-493. DOI: 10.1016/j.solmat.2003.12.002 |
0.316 |
|
| 2004 |
Saito K, Hosokai Y, Nagayama K, Ishida K, Takahashi K, Konagai M, Zhang B. MOCVD growth of monomethylhydrazine-doped ZnO layers Journal of Crystal Growth. 272: 805-809. DOI: 10.1016/J.Jcrysgro.2004.09.003 |
0.394 |
|
| 2003 |
Watahiki T, Abe K, Yamada A, Konagai M. Characterization and Comparison of Strained Si1-yCy MOSFET Grown by Gas Source MBE and Hot Wire Cell Method The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2003.P4-15 |
0.356 |
|
| 2003 |
Miyajima S, Kim M, Ide Y, Yamada A, Konagai M. Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells Japanese Journal of Applied Physics. 42: 3328-3332. DOI: 10.1143/Jjap.42.3328 |
0.535 |
|
| 2003 |
Ide Y, Asakusa K, Yamada A, Konagai M. Amorphous Silicon Thin Films Prepared by Hot Wire Cell Method and Its Application to Solar Cells Japanese Journal of Applied Physics. 42: 1521-1525. DOI: 10.1143/Jjap.42.1521 |
0.485 |
|
| 2003 |
Yagi S, Abe K, Yamada A, Konagai M. C Stability in Si1-yCy Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition Japanese Journal of Applied Physics. 42: 1499-1502. DOI: 10.1143/Jjap.42.1499 |
0.465 |
|
| 2003 |
Ahn JY, Jun KH, Lim KS, Konagai M. Stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime Applied Physics Letters. 82: 1718-1720. DOI: 10.1063/1.1561161 |
0.46 |
|
| 2003 |
Tokita Y, Chaisitsak S, Yamada A, Konagai M. High-efficiency Cu(In,Ga)Se2 thin-film solar cells with a novel In(OH)3:Zn2+ buffer layer Solar Energy Materials and Solar Cells. 75: 9-15. DOI: 10.1016/S0927-0248(02)00105-8 |
0.444 |
|
| 2003 |
Miyajima S, Yamada A, Konagai M. Highly conductive microcrystalline silicon carbide films deposited by the hot wire cell method and its application to amorphous silicon solar cells Thin Solid Films. 430: 274-277. DOI: 10.1016/S0040-6090(03)00132-9 |
0.538 |
|
| 2003 |
Watahiki T, Abe K, Yamada A, Konagai M. Epitaxial growth of strained Si1−yCy films by the hot-wire cell method and its application to metal oxide semiconductor devices Thin Solid Films. 430: 283-286. DOI: 10.1016/S0040-6090(03)00082-8 |
0.446 |
|
| 2003 |
Miyazaki H, Mikami R, Yamada A, Konagai M. Cu(InGa)Se2 thin film absorber with high Ga contents and its application to the solar cells Journal of Physics and Chemistry of Solids. 64: 2055-2058. DOI: 10.1016/S0022-3697(03)00204-X |
0.434 |
|
| 2003 |
Abe K, Yamada A, Konagai M. Characterization of epitaxial Si1-yCy layers on Si(001) grown by gas-source molecular beam epitaxy Journal of Crystal Growth. 251: 681-684. DOI: 10.1016/S0022-0248(02)02444-2 |
0.436 |
|
| 2003 |
Matsuzaki Y, Ota N, Yamada A, Sandhu A, Konagai M. Formation of nano-oxide regions in p2+-GaAs epilayers by localized atomic force microscope probe oxidation for fabrication of nano-structure devices Journal of Crystal Growth. 251: 276-280. DOI: 10.1016/S0022-0248(02)02384-9 |
0.351 |
|
| 2002 |
Yagi S, Okabayashi T, Abe K, Yamada A, Konagai M. Novel Carbon Source (1,3-Disilabutane) for the Deposition of P-Type a-SiC Mrs Proceedings. 715. DOI: 10.1557/Proc-715-A24.4 |
0.31 |
|
| 2002 |
Tokita Y, Chaisitsak S, Miyazaki H, Mikami R, Yamada A, Konagai M. Novel In(OH)3:Zn2+ Buffer Layer for Cu(InGa)Se2 Based Solar Cells. Japanese Journal of Applied Physics. 41: 7407-7412. DOI: 10.1143/Jjap.41.7407 |
0.47 |
|
| 2002 |
Zhao Y, Miyajima S, Ide Y, Yamada A, Konagai M. Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO2 with High Haze Factors Japanese Journal of Applied Physics. 41: 6417-6420. DOI: 10.1143/Jjap.41.6417 |
0.516 |
|
| 2002 |
Chaisitsak S, Yamada A, Konagai M. Preferred Orientation Control of Cu(In1-xGax)Se2 (x ?0.28) Thin Films and Its Influence on Solar Cell Characteristics Japanese Journal of Applied Physics. 41: 507-513. DOI: 10.1143/Jjap.41.507 |
0.454 |
|
| 2002 |
Amin N, Yamada A, Konagai M. Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells Japanese Journal of Applied Physics. 41: 2834-2841. DOI: 10.1143/Jjap.41.2834 |
0.471 |
|
| 2002 |
Yagi S, Abe K, Okabayashi T, Yoneyama Y, Yamada A, Konagai M. Phosphorous Doping of Strain-Induced Si1-yCy Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition Japanese Journal of Applied Physics. 41: 2472-2475. DOI: 10.1143/Jjap.41.2472 |
0.519 |
|
| 2002 |
Fujisaki T, Yamada A, Konagai M. Effects of grain boundaries on cell performance of poly-silicon thin film solar cells by 2-D simulation Solar Energy Materials and Solar Cells. 74: 331-337. DOI: 10.1016/S0927-0248(02)00092-2 |
0.415 |
|
| 2002 |
Abe K, Yagi S, Okabayashi T, Yamada A, Konagai M. Growth and characterization of phosphorus doped Si1−yCy alloy grown by photo- and plasma-CVD at very low temperature Materials Science and Engineering B-Advanced Functional Solid-State Materials. 89: 303-305. DOI: 10.1016/S0921-5107(01)00803-0 |
0.472 |
|
| 2002 |
Watahiki T, Abe K, Tamura H, Miyajima S, Yamada A, Konagai M. Characterization of low temperature epitaxial Si and Si1−yCy films grown by hot wire cell method Materials Science and Engineering B-Advanced Functional Solid-State Materials. 89: 328-331. DOI: 10.1016/S0921-5107(01)00772-3 |
0.476 |
|
| 2001 |
Yagi S, Abe K, Okabayashi T, Yamada A, Konagai M. P-Doping into Strain-Induced Si1-yCy Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2001.B-7-4 |
0.488 |
|
| 2001 |
Konagai M. Present Status and Future Prospects of Polycrystalline Thin-Film Solar Cells in Japan Solid State Phenomena. 257-268. DOI: 10.4028/Www.Scientific.Net/Ssp.80-81.257 |
0.431 |
|
| 2001 |
Jahn U, Okamoto T, Yamada A, Konagai M. Highly Efficient CdS/CdTe Solar Cells Investigated by Cathodoluminescence Spectroscopy Solid State Phenomena. 111-118. DOI: 10.4028/Www.Scientific.Net/Ssp.78-79.111 |
0.376 |
|
| 2001 |
Chaisitsak S, Yamada A, Konagai M. Comprehensive Study of Light-Soaking Effect in ZnO/Cu(InGa)Se 2 Solar Cells with Zn-Based Buffer Layers Mrs Proceedings. 668. DOI: 10.1557/Proc-668-H9.10 |
0.429 |
|
| 2001 |
Sandhu A, Kobayashi K, Okamoto T, Yamada A, Konagai M. Effect of CdCl 2 Treatment Conditions on the Deep Level Density, Carrier Lifetime and Conversion Efficiency of CdTe Thin Film Solar Cells Mrs Proceedings. 668. DOI: 10.1557/Proc-668-H8.13 |
0.418 |
|
| 2001 |
Ohtsuka T, Nakanishi K, Okamoto T, Yamada A, Konagai M, Jahn U. Epitaxial Growth of γ-In2Se3Films by Molecular Beam Epitaxy Japanese Journal of Applied Physics. 40: 509-512. DOI: 10.1143/Jjap.40.509 |
0.446 |
|
| 2001 |
Dairiki K, Yamada A, Konagai M. Numerical Analysis to Improve the Stabilized-Efficiency of Amorphous Silicon Solar Cells with New Device Structure Japanese Journal of Applied Physics. 40: 486-491. DOI: 10.1143/Jjap.40.486 |
0.426 |
|
| 2001 |
Abe K, Yagi S, Okabayashi T, Yamada A, Konagai M. Characterization of Tensile Strained Si1-yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature Japanese Journal of Applied Physics. 40: 4440-4444. DOI: 10.1143/Jjap.40.4440 |
0.491 |
|
| 2001 |
Okamoto T, Kitamoto S, Yamada A, Konagai M. Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation Japanese Journal of Applied Physics. 40: 3089-3092. DOI: 10.1143/Jjap.40.3089 |
0.351 |
|
| 2001 |
Amin N, Isaka T, Yamada A, Konagai M. Highly efficient 1 μm thick CdTe solar cells with textured TCOs Solar Energy Materials and Solar Cells. 67: 195-201. DOI: 10.1016/S0927-0248(00)00281-6 |
0.415 |
|
| 2001 |
Okamoto T, Harada Y, Yamada A, Konagai M. Improved performance of CdTe thin film solar cells through controlling the initial stage of the CdTe layer deposition by close-spaced sublimation Solar Energy Materials and Solar Cells. 67: 187-194. DOI: 10.1016/S0927-0248(00)00280-4 |
0.429 |
|
| 2001 |
Ichikawa M, Tsushima T, Yamada A, Konagai M. High-rate deposition of polycrystalline silicon thin films by hot wire cell method using disilane Solar Energy Materials and Solar Cells. 66: 225-230. DOI: 10.1016/S0927-0248(00)00177-X |
0.481 |
|
| 2001 |
Yamamoto Y, Saito K, Takahashi K, Konagai M. Preparation of boron-doped ZnO thin films by photo-atomic layer deposition Solar Energy Materials and Solar Cells. 65: 125-132. DOI: 10.1016/S0927-0248(00)00086-6 |
0.487 |
|
| 2001 |
Watahiki T, Abe K, Tamura H, Miyajima S, Yamada A, Konagai M. Low temperature epitaxial growth of Si and Si1-yCy films by hot wire cell method Thin Solid Films. 395: 221-224. DOI: 10.1016/S0040-6090(01)01272-X |
0.51 |
|
| 2001 |
Konagai M, Tsushima T, Kim M, Asakusa K, Yamada A, Kudriavtsev Y, Villegas A, Asomoza R. High-rate deposition of silicon thin-film solar cells by the hot-wire cell method Thin Solid Films. 395: 152-156. DOI: 10.1016/S0040-6090(01)01244-5 |
0.514 |
|
| 2001 |
Okamoto T, Yamada A, Konagai M. Optical and electrical characterizations of highly efficient CdTe thin film solar cells Thin Solid Films. 387: 6-10. DOI: 10.1016/S0040-6090(00)01725-9 |
0.386 |
|
| 2000 |
Yagi S, Abe K, Yamada A, Konagai M. Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition Japanese Journal of Applied Physics. 39: 1078. DOI: 10.1143/Jjap.39.L1078 |
0.466 |
|
| 2000 |
Sugiyama T, Chaisitsak S, Yamada A, Konagai M, Kudriavtsev Y, Godines A, Villegas A, Asomoza R. Formation of pn Homojunction in Cu(InGa)Se2 Thin Film Solar Cells by Zn Doping Japanese Journal of Applied Physics. 39: 4816-4819. DOI: 10.1143/Jjap.39.4816 |
0.449 |
|
| 2000 |
Ichikawa M, Tsushima T, Yamada A, Konagai M. Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method Japanese Journal of Applied Physics. 39: 4712-4715. DOI: 10.1143/Jjap.39.4712 |
0.49 |
|
| 2000 |
Shimizu A, Yamada A, Konagai M. Improvement of the Electrochemical profiling Technique of Carrier Concentration in Cu(InGa)Se2 Thin Film Solar Cells. Japanese Journal of Applied Physics. 39: 3447-3452. DOI: 10.1143/Jjap.39.3447 |
0.422 |
|
| 2000 |
Okamoto T, Yamada A, Konagai M. Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance–Voltage Profiling Technique Japanese Journal of Applied Physics. 39: 2587-2588. DOI: 10.1143/Jjap.39.2587 |
0.435 |
|
| 2000 |
Chaisitsak S, Yamada A, Konagai M, Saito K. Improvement in Performances of ZnO:B/i-ZnO/Cu(InGa)Se2 Solar Cells by Surface Treatments for Cu(InGa)Se2 Japanese Journal of Applied Physics. 39: 1660-1664. DOI: 10.1143/Jjap.39.1660 |
0.418 |
|
| 2000 |
Shimizu A, Yamada A, Konagai M. Electrical and Structural Characterizations of Cu(InGa)Se2 Thin Films Using Electrochemical Capacitance–Voltage Method and Focused-Ion Beam Process Japanese Journal of Applied Physics. 39: 109-113. DOI: 10.1143/Jjap.39.109 |
0.42 |
|
| 2000 |
Shimizu A, Chaisitsak S, Sugiyama T, Yamada A, Konagai M. Zinc-based buffer layer in the Cu(InGa)Se2 thin film solar cells Thin Solid Films. 361: 193-197. DOI: 10.1016/S0040-6090(99)00792-0 |
0.439 |
|
| 2000 |
Abe K, Tsushima T, Ichikawa M, Yamada A, Konagai M. Comparison of gas-phase reactions in low-temperature growth of Si films by photochemical vapor deposition and the hot wire cell method Journal of Non-Crystalline Solids. 266: 105-109. DOI: 10.1016/S0022-3093(99)00749-8 |
0.502 |
|
| 2000 |
Ohtsuka T, Okamoto T, Yamada A, Konagai M. Photoluminescence study of γ-In2Se3 epitaxial films grown by molecular beam epitaxy Journal of Luminescence. 87: 293-295. DOI: 10.1016/S0022-2313(99)00319-1 |
0.406 |
|
| 2000 |
Matsuzaki Y, Yamada A, Konagai M. Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process Journal of Crystal Growth. 209: 509-512. DOI: 10.1016/S0022-0248(99)00607-7 |
0.361 |
|
| 2000 |
Watahiki T, Yamada A, Konagai M. New approach to low-temperature Si epitaxy by using hot wire cell method Journal of Crystal Growth. 209: 335-338. DOI: 10.1016/S0022-0248(99)00566-7 |
0.452 |
|
| 2000 |
Okamoto T, Yamada A, Konagai M. Optical and electrical characterizations of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation Journal of Crystal Growth. 214: 1148-1151. DOI: 10.1016/S0022-0248(00)00292-X |
0.402 |
|
| 1999 |
Yamada A, Konagai M. Atomic Layer Deposition of ZnO Films and Their Application to Solar Cells Solid State Phenomena. 237-248. DOI: 10.4028/Www.Scientific.Net/Ssp.67-68.237 |
0.479 |
|
| 1999 |
Ichikawa M, Takeshita J, Yamada A, Konagai M. Hydrogen Dilution Effect on the Crystallinity of Silicon Films Grow by Hot Wire Cell Method Mrs Proceedings. 557: 531. DOI: 10.1557/Proc-557-531 |
0.479 |
|
| 1999 |
Ichikawa M, Takeshita J, Yamada A, Konagai M. High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L24 |
0.485 |
|
| 1999 |
Ohtsuka T, Okamoto T, Yamada A, Konagai M. Molecular Beam Epitaxy and Characterization of Layered In2Se3 Films Grown on Slightly Misoriented (001)GaAs Substrates Japanese Journal of Applied Physics. 38: 668-673. DOI: 10.1143/Jjap.38.668 |
0.491 |
|
| 1999 |
Chaisitsak S, Sugiyama T, Yamada A, Konagai M. Cu(InGa)Se2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition Japanese Journal of Applied Physics. 38: 4989-4992. DOI: 10.1143/Jjap.38.4989 |
0.455 |
|
| 1999 |
Sang B, Dairiki K, Yamada A, Konagai M. High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact Japanese Journal of Applied Physics. 38: 4983-4988. DOI: 10.1143/Jjap.38.4983 |
0.541 |
|
| 1999 |
Amin N, Isaka T, Okamoto T, Yamada A, Konagai M. Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 µm Japanese Journal of Applied Physics. 38: 4666-4672. DOI: 10.1143/Jjap.38.4666 |
0.434 |
|
| 1999 |
Dairiki K, Yamada A, Konagai M. Improvement of Stabilized Efficiency of Amorphous Silicon Solar Cell by SiH2Cl2 Addition. Japanese Journal of Applied Physics. 38: 4007-4012. DOI: 10.1143/Jjap.38.4007 |
0.513 |
|
| 1999 |
Abe K, Watahiki T, Yamada A, Konagai M. Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures Japanese Journal of Applied Physics. 38: 3622-3627. DOI: 10.1143/Jjap.38.3622 |
0.439 |
|
| 1999 |
Matsuzaki Y, Yuasa K, Shirakashi J, Chilla EK, Yamada A, Konagai M. Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process Journal of Crystal Growth. 201202: 656-659. DOI: 10.1016/S0022-0248(98)01443-2 |
0.312 |
|
| 1998 |
Ichikawa M, Takeshita J, Yamada A, Konagai M. Low Temperature Deposition of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method Mrs Proceedings. 536. DOI: 10.1557/Proc-536-487 |
0.469 |
|
| 1998 |
Abe K, Watahiki T, Yamada A, Konagai M. Analysis of Radical Reaction on Growing Surface During Si Epitaxy by Photo-Cvd Mrs Proceedings. 507. DOI: 10.1557/Proc-507-423 |
0.317 |
|
| 1998 |
Miura N, Numaguchi T, Yamada A, Konagai M, Shirakashi J. Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques Japanese Journal of Applied Physics. 37. DOI: 10.1143/Jjap.37.L423 |
0.331 |
|
| 1998 |
Sang B, Yamada A, Konagai M. Textured ZnO Thin Films for Solar Cells Grown by a Two-step Process with the Atomic Layer Deposition Technique Japanese Journal of Applied Physics. 37. DOI: 10.1143/Jjap.37.L206 |
0.484 |
|
| 1998 |
Budiman M, Okamoto T, Yamada A, Konagai M. Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaSxSe1-x on (001)GaAs Substrate Japanese Journal of Applied Physics. 37: 5497-5499. DOI: 10.1143/Jjap.37.5497 |
0.409 |
|
| 1998 |
Budiman M, Yamada A, Konagai M. Heteroepitaxy of Layered Compound InSe and InSe/GaSe onto GaAs Substrates Japanese Journal of Applied Physics. 37: 4092-4098. DOI: 10.1143/Jjap.37.4092 |
0.463 |
|
| 1998 |
Okamoto T, Matsuzaki Y, Amin N, Yamada A, Konagai M. Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence Japanese Journal of Applied Physics. 37: 3894-3899. DOI: 10.1143/Jjap.37.3894 |
0.424 |
|
| 1998 |
Ohtake Y, Chaisitsak S, Yamada A, Konagai M. Characterization of ZnInxSey Thin Films as a Buffer Layer for High Efficiency Cu(InGa)Se2 Thin-Film Solar Cells Japanese Journal of Applied Physics. 37: 3220-3225. DOI: 10.1143/Jjap.37.3220 |
0.481 |
|
| 1998 |
Miura N, Yamada A, Konagai M. Fabrication Of Sub-Micron Gap Structures Using Directly-Deposited Amorphous Carbon Wires Japanese Journal of Applied Physics. 37: 2072-2073. DOI: 10.1143/Jjap.37.2072 |
0.428 |
|
| 1998 |
Abe K, Watahiki T, Yamada A, Konagai M. Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures Japanese Journal of Applied Physics. 37: 1202-1205. DOI: 10.1143/Jjap.37.1202 |
0.47 |
|
| 1998 |
Hatatani S, Yuasa K, Konagai M. MOMBE growth of InGaP on (1 0 0) and (4 1 1)A GaAs substrates using tertiarybutylphosphine (TBP) Journal of Crystal Growth. 188: 17-20. DOI: 10.1016/S0022-0248(98)00055-4 |
0.446 |
|
| 1997 |
Miura N, Numaguchi T, Yamada A, Konagai M. Sub-Micron Tungsten Carbide/Amorphous Carbon Stacked Diode Fabricated by Ion- and Electron-Beam-Induced Deposition Technique The Japan Society of Applied Physics. 1997: 258-259. DOI: 10.7567/Ssdm.1997.D-6-5 |
0.328 |
|
| 1997 |
Abe K, Yamada A, Konagai M. Characterization of Hydrogen in Epitaxial Si Films Grown at Very Low Temperature The Japan Society of Applied Physics. 1997: 450-451. DOI: 10.7567/Ssdm.1997.A-13-3 |
0.467 |
|
| 1997 |
Miura N, Ishii H, Yamada A, Konagai M, Yamauchi Y, Yamamoto A. Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Concentration at Very Low Temperature Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L256 |
0.441 |
|
| 1997 |
Miura N, Numaguchi T, Yamada A, Konagai M, Shirakashi J. Single-Electron Tunneling through Amorphous Carbon Dots Array Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L1619 |
0.317 |
|
| 1997 |
Miura N, Yamada A, Konagai M. Fabrication of Sub-Micron Tungsten Carbide (WCx)/Amorphous Carbon (a-C) Stacked Junction By Beam-Induced Reaction Processes. Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L1275 |
0.414 |
|
| 1997 |
Shirakashi J, Matsumoto K, Miura N, Konagai M. Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process. Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L1257 |
0.324 |
|
| 1997 |
Shirakashi J, Matsumoto K, Miura N, Konagai M. Nb/Nb Oxide-Based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L1120 |
0.311 |
|
| 1997 |
Oshima T, Yamada A, Konagai M. Analysis of H2-Dilution Effects on Photochemical Vapor Deposition of Si Thin Films Japanese Journal of Applied Physics. 36: 6481-6487. DOI: 10.1143/Jjap.36.6481 |
0.466 |
|
| 1997 |
Oh J, Hayakawa N, Konagai M. Carbon Diffusion Behavior in a GaAs Tunnel Junction with a Heavily Carbon Doped p+-Layer by Metalorganic Molecular Beam Epitaxy Japanese Journal of Applied Physics. 36: 6300-6301. DOI: 10.1143/Jjap.36.6300 |
0.329 |
|
| 1997 |
Ohtake Y, Okamoto T, Yamada A, Konagai M, Saito K. Improved performance of Cu(InGa)Se2 thin-film solar cells using evaporated Cd-free buffer layers Solar Energy Materials and Solar Cells. 49: 269-275. DOI: 10.1016/S0927-0248(97)00203-1 |
0.432 |
|
| 1997 |
Saito K, Watanabe Y, Takahashi K, Matsuzawa T, Sang B, Konagai M. Photo atomic layer deposition of transparent conductive ZnO films Solar Energy Materials and Solar Cells. 49: 187-193. DOI: 10.1016/S0927-0248(97)00194-3 |
0.498 |
|
| 1997 |
Sang B, Yamada A, Konagai M. Growth of boron-doped ZnO thin films by atomic layer deposition Solar Energy Materials and Solar Cells. 49: 19-26. DOI: 10.1016/S0927-0248(97)00171-2 |
0.482 |
|
| 1997 |
Budiman M, Okamoto T, Yamada A, Konagai M. Epitaxial growth and characterization of GaSxSe1−x layered compound semiconductor by molecular beam epitaxy Applied Surface Science. 518-522. DOI: 10.1016/S0169-4332(97)80135-3 |
0.411 |
|
| 1997 |
Yamada A, Sang B, Konagai M. Atomic layer deposition of ZnO transparent conducting oxides Applied Surface Science. 112: 216-222. DOI: 10.1016/S0169-4332(96)01022-7 |
0.506 |
|
| 1997 |
Miura N, Ishii H, Shirakashi J, Yamada A, Konagai M. Electron-beam-induced deposition of carbonaceous microstructures using scanning electron microscopy Applied Surface Science. 113114: 269-273. DOI: 10.1016/S0169-4332(96)00767-2 |
0.324 |
|
| 1997 |
Okamoto T, Yamada A, Konagai M. Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxy Journal of Crystal Growth. 1045-1050. DOI: 10.1016/S0022-0248(96)00984-0 |
0.494 |
|
| 1997 |
Hatatani S, Guo L, Oh J, Grahn HT, Konagai M. Heavily carbon-doped GaAs grown on various oriented GaAs substrates by MOMBE Journal of Crystal Growth. 170: 297-300. DOI: 10.1016/S0022-0248(96)00584-2 |
0.437 |
|
| 1996 |
Konagai M, Ohtake Y, Okamoto T. Development of Cu(InGa)Se2 Thin Film Solar Cells with Cd-Free Buffer Layers Mrs Proceedings. 426. DOI: 10.1557/PROC-426-153 |
0.361 |
|
| 1996 |
Konagai M. Photovoltaic Effect in Solar Cells Ieej Transactions On Sensors and Micromachines. 116: 127-130. DOI: 10.1541/Ieejsmas.116.127 |
0.308 |
|
| 1996 |
Sang B, Konagai M. Growth of Transparent Conductive Oxide ZnO Films by Atomic Layer Deposition Japanese Journal of Applied Physics. 35. DOI: 10.1143/Jjap.35.L602 |
0.49 |
|
| 1996 |
Guo L, Konagai M. Heavily carbon-doped p-type GaAs grown on GaAs substrates with various orientations by metalorganic molecular beam epitaxy Japanese Journal of Applied Physics. 35. DOI: 10.1143/Jjap.35.L195 |
0.434 |
|
| 1996 |
Shirakashi J, Ishii M, Matsumoto K, Miura N, Konagai M. Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process Japanese Journal of Applied Physics. 35. DOI: 10.1143/Jjap.35.L1524 |
0.367 |
|
| 1996 |
Miura N, Ishii H, Yamada A, Konagai M. Application of Carbonaceous Material for Fabrication of Nano-Wires with a Scanning Electron Microscopy Japanese Journal of Applied Physics. 35. DOI: 10.1143/Jjap.35.L1089 |
0.365 |
|
| 1996 |
Konagai M. Present status of thin film solar cells in Japan Renewable Energy. 8: 410-414. DOI: 10.1016/0960-1481(96)88888-4 |
0.314 |
|
| 1996 |
Oh J, Fukuchi F, Kang H, Konagai M. Influence of H2 on electrical and optical properties of carbon-doped InP grown by MOMBE using tertiarybutylphosphine (TBP) Journal of Crystal Growth. 164: 425-429. DOI: 10.1016/0022-0248(96)00015-2 |
0.314 |
|
| 1995 |
Abe K, Oshima T, Yamada A, Konagai M. Boron Neutralization in Epitaxial Si Films Grown by Photo-CVD at Very Low Temperature (≦ 200°C) Materials Science Forum. 867-872. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.867 |
0.473 |
|
| 1995 |
Oshima T, Yamaguchi K, Abe K, Yamada A, Konagai M, Takahashi K. Effects of SiH 2 Cl 2 Addition on the Growth Mechanism of Si Films Prepared by Photochemical Vapor Deposition Mrs Proceedings. 377. DOI: 10.1557/Proc-377-125 |
0.468 |
|
| 1995 |
Oshima T, Abe K, Yamada A, Konagai M. Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature ( <200° C) Japanese Journal of Applied Physics. 34. DOI: 10.1143/Jjap.34.L1425 |
0.49 |
|
| 1995 |
Okamoto T, Takegami T, Yamada A, Konagai M. Control of the Arrangement of the Native Gallium Vacancies in Ga2Se3 on (100)GaAs by Molecular Beam Epitaxy Japanese Journal of Applied Physics. 34: 5984-5988. DOI: 10.1143/Jjap.34.5984 |
0.413 |
|
| 1995 |
Kuranouchi S, Konagai M. Characterization of ZnO/CdS/CuInSe 2 Thin-Film Solar Cells by Deep-Level Transient Spectroscopy Japanese Journal of Applied Physics. 34: 2350-2351. DOI: 10.1143/Jjap.34.2350 |
0.392 |
|
| 1995 |
Shirakashi J, Azuma T, Fukuchi F, Konagai M, Takahashi K. InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5?1021cm-3) Japanese Journal of Applied Physics. 34: 1204-1207. DOI: 10.1143/Jjap.34.1204 |
0.411 |
|
| 1995 |
Siamchai P, Konagai M. Degradation behavior of amorphous silicon solar cells fabricated by mercury‐sensitized photochemical vapor deposition with hydrogen dilution Applied Physics Letters. 67: 3468-3470. DOI: 10.1063/1.115249 |
0.448 |
|
| 1995 |
Oh J, Shirakashi J, Fukuchi F, Konagai M. Metalorganic molecular beam epitaxy of heavily carbon‐doped InP using tertiarybutylphosphine as a carbon auto‐doping source Applied Physics Letters. 66: 2891-2893. DOI: 10.1063/1.113464 |
0.306 |
|
| 1995 |
Shirakashi J, Konagai M. InGaP/GaAs and InP/InGaAs heterojunction bipolar transistors with a super heavily carbon-doped base grown by metalorganic molecular beam epitaxy Solid-State Electronics. 38: 1675-1678. DOI: 10.1016/0038-1101(95)00047-W |
0.411 |
|
| 1995 |
Shirakashi J, Azuma T, Fukuchi F, Konagai M, Takahashi K. Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors Journal of Crystal Growth. 150: 585-590. DOI: 10.1016/0022-0248(95)80277-J |
0.425 |
|
| 1995 |
Kojima N, Sato K, Budiman M, Yamada A, Konagai M, Takahashi K, Nakamura Y, Nittono O. Molecular beam epitaxial growth and characterization of epitaxial GaSe films on (001)GaAs Journal of Crystal Growth. 150: 1175-1179. DOI: 10.1016/0022-0248(95)80124-U |
0.505 |
|
| 1995 |
Yamada A, Oshima T, Konagai M, Takahashi K. Selective silicon epitaxy by photo-chemical vapor deposition at a very low temperature of 160° C Journal of Electronic Materials. 24: 1511-1515. DOI: 10.1007/Bf02655470 |
0.503 |
|
| 1994 |
Shirakashi J, Azuma T, Fukuchi F, Konagai M, Takahashi K. InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with a Ultra-High Carbon-Doped Base (p=1.5×1021cm-3) The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1994.Pc-1-3 |
0.332 |
|
| 1994 |
Oshima T, Yamaguchi K, Yamada A, Konagai M, Takahashi K. Improvement of film Quality of A-Si:H Deposited by Photo-CVD using SiH 2 Cl 2 Mrs Proceedings. 336: 91. DOI: 10.1557/Proc-336-91 |
0.446 |
|
| 1994 |
Wenas WW, Yamada A, Konagai M, Takahashi K. Metalorganic Chemical Vapor Deposition Of Zno Using D2O As Oxidant Japanese Journal of Applied Physics. 33. DOI: 10.1143/Jjap.33.L283 |
0.46 |
|
| 1994 |
Oshima T, Alonso JC, Yamada A, Konagai M, Takahashi K. Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH2Cl2 Japanese Journal of Applied Physics. 33. DOI: 10.1143/Jjap.33.L153 |
0.506 |
|
| 1994 |
Kojima N, Sato K, Yamada A, Konagai M, Takahashi K. Epitaxial Growth of GaSe Films by Molecular Beam Epitaxy on GaAs(111), (001) and (112) Substrates Japanese Journal of Applied Physics. 33. DOI: 10.1143/Jjap.33.L1482 |
0.482 |
|
| 1994 |
Okamoto T, Miyashita T, Yamada A, Konagai M, Takahashi K. Formation of ZnGa2Se4 Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga2Se3 on ZnSe Japanese Journal of Applied Physics. 33. DOI: 10.1143/Jjap.33.L1059 |
0.498 |
|
| 1994 |
Kushiya K, Ohtake Y, Yamada A, Konagai M. Development of Polycrystalline CuInxGa1-xSe2 Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV Japanese Journal of Applied Physics. 33: 6599-6604. DOI: 10.1143/Jjap.33.6599 |
0.461 |
|
| 1994 |
Siamchai P, Yamada A, Konagai M. Improvement of a-Si Solar Cell Fabricated by Mercury-Sensitized Photochemical Vapor Deposition Using H2 Dilution Technique Japanese Journal of Applied Physics. 33: 6099-6104. DOI: 10.1143/Jjap.33.6099 |
0.487 |
|
| 1994 |
Nagao K, Shirakashi J, Konagai M, Takahashi K. Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium Japanese Journal of Applied Physics. 33: 6090-6094. DOI: 10.1143/Jjap.33.6090 |
0.368 |
|
| 1994 |
Wenas WW, De A, Yamada A, Konagai M, Takahashi K. Optimization of ZnO for front and rear contacts in a-Si solar cells Solar Energy Materials and Solar Cells. 34: 313-319. DOI: 10.1016/0927-0248(94)90055-8 |
0.498 |
|
| 1994 |
Oshima T, Sano M, Yamada A, Konagai M, Takahashi K. Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition Applied Surface Science. 215-219. DOI: 10.1016/0169-4332(94)90412-X |
0.499 |
|
| 1994 |
Alonso JC, Oshima T, Yamada A, Konagai M, Takahashi K. Low-temperature epitaxial growth of undoped and n-doped silicon by photochemical vapor deposition using SiH4/SiH2Cl2/H2/PH3 mixtures Thin Solid Films. 237: 98-104. DOI: 10.1016/0040-6090(94)90244-5 |
0.514 |
|
| 1994 |
Shirakashi J, Yoshioka RT, Azuma T, Fukuchi F, Konagai M, Takahashi K. Metalorganic molecular beam epitaxial growth of InP and InGaP with tertiarybutylphosphine for the application of carbon-doped base heterojunction bipolar transistors Journal of Crystal Growth. 145: 935-940. DOI: 10.1016/0022-0248(94)91167-3 |
0.391 |
|
| 1994 |
Okamoto T, Yamada A, Konagai M, Takahashi K. Polarized photoluminescence in vacancy-ordered Ga2Se3 Journal of Crystal Growth. 138: 204-207. DOI: 10.1016/0022-0248(94)90807-9 |
0.361 |
|
| 1994 |
Shirakashi J, Yoshioka RT, Miyano A, Konagai M, Takahashi K. Effect of the addition of an elemental Ga flux on the metalorganic molecular beam epitaxial growth of heavily carbon-doped InGaAs Journal of Crystal Growth. 136: 186-190. DOI: 10.1016/0022-0248(94)90406-5 |
0.385 |
|
| 1993 |
Kushiya K, Yamada A, Hakuma H, Sano H, Konagai M. Characterization of CuInSe2Thin Films by Photoluminescence Measurements Japanese Journal of Applied Physics. 32: 54-56. DOI: 10.7567/Jjaps.32S3.54 |
0.404 |
|
| 1993 |
Konagai M. Extremely Heavy Doping of Carbon in GaAs and InGaAs Materials Science Forum. 37-44. DOI: 10.4028/Www.Scientific.Net/Msf.117-118.37 |
0.304 |
|
| 1993 |
Kojima N, Yamada A, Takahashi K, Okamoto T, Konagai M, Saito K. Photoinduced oxidation of epitaxial Ga2Se3 grown by molecular beam epitaxy Japanese Journal of Applied Physics. 32. DOI: 10.1143/Jjap.32.L887 |
0.319 |
|
| 1993 |
Yamada T, Shirahama M, Tokumitsu E, Konagai M, Takahashi K. Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy Japanese Journal of Applied Physics. 32. DOI: 10.1143/Jjap.32.L1123 |
0.358 |
|
| 1993 |
Yoshino M, Wenas WW, Yamada A, Konagai M, Takahashi K. Large-Area ZnO Thin Films for Solar Cells Prepared by Photo-Induced Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. 32: 726-730. DOI: 10.1143/Jjap.32.726 |
0.484 |
|
| 1993 |
Shirahama M, Nagao K, Tokumitsu E, Konagai M, Takahashi K. Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source Japanese Journal of Applied Physics. 32: 5473-5478. DOI: 10.1143/Jjap.32.5473 |
0.416 |
|
| 1993 |
Tabuchi K, Wenas WW, Yamada A, Konagai M, Takahashi K. Optimization of ZnO Films for Amorphous Silicon Solar Cells Japanese Journal of Applied Physics. 32: 3764-3769. DOI: 10.1143/Jjap.32.3764 |
0.513 |
|
| 1993 |
Tanda M, Manaka S, Yamada A, Konagai M, Takahashi K. Photoluminescence Studies and Solar-Cell Application of CuInSe2Thin Films Prepared using Selenization Techniques Japanese Journal of Applied Physics. 32: 1913-1918. DOI: 10.1143/JJAP.32.1913 |
0.305 |
|
| 1993 |
Jia Y, Oshima T, Yamada A, Konagai M, Takahashi K, Tanigawa S, Wei L. Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature Japanese Journal of Applied Physics. 32: 1884-1888. DOI: 10.1143/Jjap.32.1884 |
0.503 |
|
| 1993 |
Nozaki S, Takahashi K, Shirahama M, Nagao K, Shirakashi J, Tokumitsu E, Konagai M. Study on thermal stability of carbon-doped GaAs using novel metalorganic molecular beam epitaxial structures Applied Physics Letters. 62: 1913-1915. DOI: 10.1063/1.109541 |
0.376 |
|
| 1993 |
de la L. Olvera M, Maldonado A, Asomoza R, Konagai M, Asomoza M. Growth of textured ZnO:In thin films by chemical spray deposition Thin Solid Films. 229: 196-200. DOI: 10.1016/0040-6090(93)90364-U |
0.325 |
|
| 1993 |
Konagai M, Takemura Y, Yamasaki K, Takahashi K. Self-limiting growth of zinc chalcogenides and their superlattices Thin Solid Films. 225: 256-260. DOI: 10.1016/0040-6090(93)90165-L |
0.391 |
|
| 1993 |
Tokumitsu E, Shirahama M, Nagao K, Nozaki S, Konagai M, Takahashi K. Carbon doping in molecular beam epitaxial (MBE) growth of GaAs using neopentane as a novel carbon source Journal of Crystal Growth. 127: 711-715. DOI: 10.1016/0022-0248(93)90717-B |
0.368 |
|
| 1993 |
Okamoto T, Konagai M, Kojima N, Yamada A, Takahashi K, Nakamura Y, Nittono O. Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga 2 Se 3 Journal of Electronic Materials. 22: 229-232. DOI: 10.1007/Bf02665031 |
0.347 |
|
| 1993 |
Takemura Y, Konagai M, Yamasaki K, Lee CH, Takahashi K. Atomic layer epitaxy of nitrogen-doped ZnSe Journal of Electronic Materials. 22: 437-440. DOI: 10.1007/Bf02661609 |
0.508 |
|
| 1992 |
Qi M, Luo J, Shirakashi J, Tokumitsu E, Nozaki S, Konagai M, Takahashi K. Heavily Carbon Doped P-Type GaAs/InGaAs Strained-Layer Superlattices Grown by Mombe Mrs Proceedings. 281. DOI: 10.1557/Proc-281-167 |
0.36 |
|
| 1992 |
Sohn H, Weber ER, Nozaki S, Konagai M, Takahashi K. The Thermal Stability of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy Mrs Proceedings. 262. DOI: 10.1557/Proc-262-129 |
0.442 |
|
| 1992 |
Fujimoto I, Nishine S, Yamada T, Konagai M, Takahashi K. Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE) Japanese Journal of Applied Physics. 31. DOI: 10.1143/Jjap.31.L296 |
0.371 |
|
| 1992 |
Yamada A, Kojima N, Takahashi K, Okamoto T, Konagai M. Raman Study of Epitaxial Ga2Se3 Films Grown by Molecular Beam Epitaxy Japanese Journal of Applied Physics. 31. DOI: 10.1143/Jjap.31.L186 |
0.431 |
|
| 1992 |
Okamoto T, Kojima N, Yamada A, Konagai M, Takahashi K, Nakamura Y, Nittono O. Optical Anisotropy of Vacancy-Ordered Ga 2 Se 3 Grown by Molecular Beam Epitaxy Japanese Journal of Applied Physics. 31. DOI: 10.1143/Jjap.31.L143 |
0.36 |
|
| 1992 |
Kimura R, Konagai M, Takahashi K. Atomic layer epitaxy of ZnSe on GaAs(100) by metalorganic molecular beam epitaxy Journal of Crystal Growth. 116: 283-288. DOI: 10.1016/0022-0248(92)90634-U |
0.463 |
|
| 1991 |
Nozaki S, Miyake R, Shirakashi J, Qi M, Yamada T, Tokumitsu E, Konagai M, Takahashi K, Matsumoto K. GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1991.Pc4-3 |
0.321 |
|
| 1991 |
Wenas WW, Yamada A, Konagai M, Takahashi K. Textured ZnO Thin Films for Solar Cells Grown by Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. 30. DOI: 10.1143/Jjap.30.L441 |
0.49 |
|
| 1991 |
Takemura Y, Nakanishi H, Konagai M, Takahashi K. Self-Limiting Growth in Atomic Layer Epitaxy of ZnTe Japanese Journal of Applied Physics. 30. DOI: 10.1143/Jjap.30.L246 |
0.412 |
|
| 1991 |
Shirakashi J, Yamada T, Qi M, Nozaki S, Takahashi K, Tokumitsu E, Konagai M. P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy Japanese Journal of Applied Physics. 30. DOI: 10.1143/Jjap.30.L1609 |
0.404 |
|
| 1991 |
Yamada A, Wenas WW, Yoshino M, Konagai M, Takahashi K. Mobility Enhancement of Textured ZnO Films by Ultraviolet Light Irradiation Japanese Journal of Applied Physics. 30. DOI: 10.1143/Jjap.30.L1152 |
0.45 |
|
| 1991 |
Jia Y, Yamada A, Konagai M, Takahashi K. Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition Japanese Journal of Applied Physics. 30: 893-896. DOI: 10.1143/Jjap.30.893 |
0.47 |
|
| 1991 |
Nozaki S, Saito K, Shirakashi J, Qi M, Yamada T, Tokumitsu E, Konagai M, Takahashi K, Matsumoto K. GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base Japanese Journal of Applied Physics. 30: 3840-3842. DOI: 10.1143/Jjap.30.3840 |
0.357 |
|
| 1991 |
Tabuchi K, Yamada A, Konagai M, Takahashi K. p-Type a-SiC:H Films Using Triethylboron and Its Application to Solar Cells Japanese Journal of Applied Physics. 30: 2742-2743. DOI: 10.1143/Jjap.30.2742 |
0.382 |
|
| 1991 |
Higuchi K, Tabuchi K, Lim KS, Konagai M, Takahashi K. High-efficiency delta-doped amorphous silicon solar cells prepared by photochemical vapor deposition Japanese Journal of Applied Physics. 30: 1635-1640. DOI: 10.1143/Jjap.30.1635 |
0.478 |
|
| 1991 |
Wenas WW, Yamada A, Takahashi K, Yoshino M, Konagai M. Electrical and optical properties of boron‐doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition Journal of Applied Physics. 70: 7119-7123. DOI: 10.1063/1.349794 |
0.348 |
|
| 1991 |
Usagawa T, Kobayashi M, Mishima T, Rabinzohn PD, Ihara A, Kawata M, Yamada T, Tokumitsu E, Konagai M, Takahashi K. Extremely low non‐alloyed specific contact resistance ρc (10−8 Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C‐doped (1021 cm−3) p++GaAs Journal of Applied Physics. 69: 8227-8232. DOI: 10.1063/1.347427 |
0.353 |
|
| 1991 |
George T, Weber ER, Nozaki S, Yamada T, Konagai M, Takahashi K. Critical thickness anisotropy in highly carbon‐doped p‐type (100)GaAs layers grown by metalorganic molecular beam epitaxy Applied Physics Letters. 59: 60-62. DOI: 10.1063/1.105522 |
0.4 |
|
| 1991 |
Teraguchi N, Kato F, Konagai M, Takahashi K, Nakamura Y, Otsuka N. Vacancy ordering of Ga2Se3 films by molecular beam epitaxy Applied Physics Letters. 59: 567-569. DOI: 10.1063/1.105388 |
0.463 |
|
| 1991 |
Baert K, Vanhellemont J, Vandervorst W, Nijs J, Konagai M. Heavily phosphorus-doped epitaxial Si deposited by low-temperature plasma-enhanced chemical vapor deposition Applied Physics Letters. 59: 797-799. DOI: 10.1063/1.105346 |
0.425 |
|
| 1991 |
Takemura Y, Nakanishi H, Konagai M, Takahashi K, Nakamura Y, Otsuka N. (ZnSe)m-(ZnTe)n short-period strained layer superlattices prepared by atomic layer epitaxy Journal of Crystal Growth. 111: 802-806. DOI: 10.1016/0022-0248(91)91085-O |
0.376 |
|
| 1991 |
Yamada T, Nozaki S, Miyake R, Fukamachi T, Shirakashi J, Konagai M, Takahashi K. MOMBE growth and characterization of heavily carbon-doped InGaAs Journal of Crystal Growth. 111: 584-588. DOI: 10.1016/0022-0248(91)91044-B |
0.39 |
|
| 1991 |
Teraguchi N, Konagai M, Kato F, Takahashi K. Growth and characterization of Ga2Se3 by molecular beam epitaxy Journal of Crystal Growth. 115: 798-801. DOI: 10.1016/0022-0248(91)90848-Y |
0.437 |
|
| 1991 |
Teraguchi N, Kato F, Konagai M, Takahashi K. Growth and characterization of Ga 2 Te 3 films by metalorganic molecular beam epitaxy Journal of Electronic Materials. 20: 247-250. DOI: 10.1007/Bf02651900 |
0.453 |
|
| 1990 |
Nozaki S, Miyake R, Yamada T, Konagai M, Takahashi K. GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE Japanese Journal of Applied Physics. 29. DOI: 10.1143/Jjap.29.L1731 |
0.373 |
|
| 1990 |
Saito K, Konagai M, Takahashi K. Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's Japanese Journal of Applied Physics. 29: 1900-1907. DOI: 10.1143/Jjap.29.1900 |
0.338 |
|
| 1990 |
Takemura Y, Dosho S, Konagai M, Takahashi K. Optical properties of ZnSeZnTe strained layer superlattices prepared by atomic layer epitaxy Journal of Crystal Growth. 101: 81-85. DOI: 10.1016/0022-0248(90)90941-D |
0.354 |
|
| 1990 |
Konagai M, Yamada T, Akatsuka T, Nozaki S, Miyake R, Saito K, Fukamachi T, Tokumitsu E, Takahashi K. Metallic p-type GaAs and InGaAs grown by MOMBE Journal of Crystal Growth. 105: 359-365. DOI: 10.1016/0022-0248(90)90386-Y |
0.376 |
|
| 1990 |
Yamada A, Jia Y, Konagai M, Takahashi K. Heavily P-doped (>10 21 cm -3 )Si and SiGe films grown by photo-CVD at 250° C Journal of Electronic Materials. 19: 1083-1087. DOI: 10.1007/Bf02651985 |
0.464 |
|
| 1989 |
Konagai M, Takemura Y, Kimura R, Teraguchi N, Takahashl K. Atomic Layer Epitaxy of Wide Bandgap II-VI Compound Semiconductor Superlattices Mrs Proceedings. 161. DOI: 10.1557/Proc-161-177 |
0.322 |
|
| 1989 |
Yamada A, Jia Y, Konagai M, Takahashi K. Heavily P-Doped (>1021cm-3) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250°C Japanese Journal of Applied Physics. 28. DOI: 10.1143/Jjap.28.L2284 |
0.5 |
|
| 1989 |
Teraguchi N, Kato F, Konagai M, Takahashi K. Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam Epitaxy Japanese Journal of Applied Physics. 28. DOI: 10.1143/Jjap.28.L2134 |
0.424 |
|
| 1989 |
Yamanaka S, Konagai M, Takahashi K. Characterization of Copper Indium Diselenide Thin Films by Raman Scattering Spectroscopy for Solar Cell Applications Japanese Journal of Applied Physics. 28. DOI: 10.1143/Jjap.28.L1337 |
0.388 |
|
| 1989 |
Kim W, Shibata A, Kazama Y, Konagai M, Takahashi K. Optimum Cell Design for High-Performance A-Si:H Solar Cells Prepared by Photo-CVD Japanese Journal of Applied Physics. 28: 311-315. DOI: 10.1143/Jjap.28.311 |
0.42 |
|
| 1989 |
Saito K, Yamada T, Akatsuka T, Fukamachi T, Tokumitsu E, Konagai M, Takahashi K. Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's Japanese Journal of Applied Physics. 28: 2081-2084. DOI: 10.1143/Jjap.28.2081 |
0.355 |
|
| 1989 |
Yamanaka S, Konagai M, Takahashi K. Numerical study of amorphous silicon based solar cell performance toward 15 % conversion efficiency Japanese Journal of Applied Physics. 28: 1178-1184. DOI: 10.1143/Jjap.28.1178 |
0.413 |
|
| 1989 |
Kazama Y, Seki K, Kim W, Yamanaka S, Konagai M, Takahashi K. High Efficiency Amorphous Silicon Solar Cells with "Delta-Doped" P-Layer Japanese Journal of Applied Physics. 28: 1160-1164. DOI: 10.1143/Jjap.28.1160 |
0.416 |
|
| 1989 |
Tokumitsu E, Yamada T, Konagai M, Takahashi K. Photo‐metalorganic molecular‐beam epitaxy: A new epitaxial growth technique Journal of Vacuum Science and Technology. 7: 706-710. DOI: 10.1116/1.575870 |
0.378 |
|
| 1989 |
Dosho S, Takemura Y, Konagai M, Takahashi K. Atomic layer epitaxial growth of ZnSe, ZnTe, and ZnSe-ZnTe strained-layer superlattices Journal of Applied Physics. 66: 2597-2602. DOI: 10.1063/1.344225 |
0.442 |
|
| 1989 |
Yamanaka S, Kazama Y, Seki K, Hiroshiro K, Konagai M, Takahashi K. Effect of δ-doped p-layer on the photovoltaic properties of a-Si solar cells Journal of Non-Crystalline Solids. 115: 60-62. DOI: 10.1016/0022-3093(89)90360-8 |
0.423 |
|
| 1989 |
Dosho S, Takemura Y, Konagai M, Takahashi K. Atomic layer epitaxy of ZnSe-ZnTe strained layer superlattices Journal of Crystal Growth. 95: 580-583. DOI: 10.1016/0022-0248(89)90470-3 |
0.383 |
|
| 1989 |
Yamada T, Tokumitsu E, Saito K, Akatsuka T, Miyauchi M, Konagai M, Takahashi K. Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy Journal of Crystal Growth. 95: 145-149. DOI: 10.1016/0022-0248(89)90369-2 |
0.402 |
|
| 1989 |
Konagai M, Yamada T, Akatsuka T, Saito K, Tokumitsu E, Takahashi K. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy Journal of Crystal Growth. 98: 167-173. DOI: 10.1016/0022-0248(89)90196-6 |
0.438 |
|
| 1988 |
Yamada A, Jia Y, Konagai M, Takahashi K. Si/Si1-xGex Strained Layer Superlattices Grown by Photo-Chemical Vapor Deposition at 250℃ The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1988.C-3-3 |
0.422 |
|
| 1988 |
Kim WY, Konagai M, Takahashi K. High quality amorphous silicon films prepared by atmospheric-pressure photo-cvd Japanese Journal of Applied Physics. 27: L948-L950. DOI: 10.1143/JJAP.27.L948 |
0.328 |
|
| 1988 |
Yamada A, Jia Y, Konagai M, Takahashi K. Photochemical Vapor Deposition of Si/Si 1− x Ge x Strained Layer Superlattices at 250°C Japanese Journal of Applied Physics. 27. DOI: 10.1143/Jjap.27.L2174 |
0.426 |
|
| 1988 |
Saito K, Tokumitsu E, Akatsuka T, Miyauchi M, Yamada T, Konagai M, Takahashi K. Characterization of p‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy Journal of Applied Physics. 64: 3975-3979. DOI: 10.1063/1.341356 |
0.394 |
|
| 1988 |
Kobayashi M, Dosho S, Imai A, Kimura R, Konagai M, Takahashi K. Electrical properties of p-type and n-type ZnSeZnTe strained-layer Superlattices and Microstructures. 4: 221-225. DOI: 10.1016/0749-6036(88)90039-0 |
0.413 |
|
| 1988 |
Konagai M, Kobayashi M, Kimura R, Takahashi K. ZnSe-ZnTe strained-layer superlattices: A novel material for the future optoelectronic devices Journal of Crystal Growth. 86: 290-295. DOI: 10.1016/0022-0248(90)90732-Z |
0.404 |
|
| 1988 |
Teraguchi N, Takemura Y, Kimura R, Konagai M, Takahashi K. Wide bandgap II-VI compound semiconductor superlattices grown by metalorganic molecular beam epitaxy Journal of Crystal Growth. 93: 720-725. DOI: 10.1016/0022-0248(88)90610-0 |
0.346 |
|
| 1987 |
Tokumitsu E, Yamada T, Konagai M, Takahashi K. Excimer Laser Irradiation Effect on Metalorganic Molecular Beam Deposition of Al and Alas : Prospects for Laser-Assisted Epitaxial Growth of Gaalas Mrs Proceedings. 101. DOI: 10.1557/Proc-101-307 |
0.318 |
|
| 1987 |
Taike A, Teraguchi N, Konagai M, Takahashi K. Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam Epitaxy Japanese Journal of Applied Physics. 26. DOI: 10.1143/Jjap.26.L989 |
0.38 |
|
| 1987 |
Nagamine K, Yamada A, Konagai M, Takahashi K. Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°C Japanese Journal of Applied Physics. 26. DOI: 10.1143/Jjap.26.L951 |
0.494 |
|
| 1987 |
Yamanaka S, Yoshida S, Konagai M, Takahashi K. High-Performance Hydrogenated Amorphous Silicon-Germanium Solar Cells Fabricated by Photochemical Vapor Deposition Japanese Journal of Applied Physics. 26: 1107-1111. DOI: 10.1143/Jjap.26.1107 |
0.511 |
|
| 1987 |
Kobayashi M, Dosho S, Imai A, Kimura R, Konagai M, Takahashi K. Realization of both p‐ and n‐type conduction for ZnSe‐ZnTe strained‐layer superlattices Applied Physics Letters. 51: 1602-1604. DOI: 10.1063/1.98568 |
0.376 |
|
| 1987 |
Ando H, Taike A, Konagai M, Takahashi K. Metalorganic molecular‐beam epitaxy of ZnSe and ZnS Journal of Applied Physics. 62: 1251-1256. DOI: 10.1063/1.339677 |
0.367 |
|
| 1987 |
Kobayashi M, Konagai M, Takahashi K, Urabe K. Lattice strain and lattice dynamics of ZnSe‐ZnTe strained‐layer superlattices Journal of Applied Physics. 61: 1015-1022. DOI: 10.1063/1.338191 |
0.312 |
|
| 1987 |
Kim WY, Tasaki H, Konagai M, Takahashi K. Use of a carbon‐alloyed graded‐band‐gap layer at thep/iinterface to improve the photocharacteristics of amorphous silicon alloyedp‐i‐nsolar cells prepared by photochemical vapor deposition Journal of Applied Physics. 61: 3071-3076. DOI: 10.1063/1.337806 |
0.328 |
|
| 1987 |
Kobayashi M, Kimura R, Konagai M, Takahashi K. Growth and characterization of ZnSe-ZnTe strained-layer superlattices Journal of Crystal Growth. 81: 495-500. DOI: 10.1016/0022-0248(87)90440-4 |
0.397 |
|
| 1986 |
Konagai M, Nishida S, Yamada A, Shiimoto T, Karasawa S, Takahashi K. Epitaxial Growth of Silicon Using Photochemical Vapor Deposition at a Very Low Temperature of 200º Centigrade Mrs Proceedings. 71: 119. DOI: 10.1557/Proc-71-119 |
0.409 |
|
| 1986 |
Konagai M. Status of Amorphous Silicon and Related Alloys Prepared by Photochemical Vapor Deposition Mrs Proceedings. 70: 257. DOI: 10.1557/Proc-70-257 |
0.364 |
|
| 1986 |
Ando H, Taike A, Kimura R, Konagai M, Takahashi K. Metalorganic Molecular Beam Epitaxial Growth of ZnSe Using Diethylzinc and Diethylselenide Japanese Journal of Applied Physics. 25. DOI: 10.1143/Jjap.25.L279 |
0.392 |
|
| 1986 |
Sichanugrist P, Suzuki H, Konagai M, Takahashi K. High-Rate Preparation of Amorphous-Silicon Solar Cells with Monosilane Japanese Journal of Applied Physics. 25: 440-443. DOI: 10.1143/Jjap.25.440 |
0.497 |
|
| 1986 |
Nishida S, Konagai M, Takahashi K. Piezoresistive Effect of Hydrogenated Microcrystalline Silicon Prepared by Plasma- and Photo-Chemical Vapor Deposition Japanese Journal of Applied Physics. 25: 17-21. DOI: 10.1143/Jjap.25.17 |
0.466 |
|
| 1986 |
Tokumitsu E, Katoh T, Kimura R, Konagai M, Takahashi K. Preparation of GaAs and Ga1-xAlxAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy Japanese Journal of Applied Physics. 25: 1211-1215. DOI: 10.1143/Jjap.25.1211 |
0.477 |
|
| 1986 |
Nishida S, Shiimoto T, Yamada A, Karasawa S, Konagai M, Takahashi K. Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200°C Applied Physics Letters. 49: 79-81. DOI: 10.1063/1.97626 |
0.485 |
|
| 1986 |
Kobayashi M, Mino N, Katagiri H, Kimura R, Konagai M, Takahashi K. Growth of a ZnSe‐ZnTe strained‐layer superlattice on an InP substrate by molecular beam epitaxy Applied Physics Letters. 48: 296-297. DOI: 10.1063/1.96585 |
0.345 |
|
| 1986 |
Kobayashi M, Mino N, Katagiri H, Kimura R, Konagai M, Takahashi K. Photoluminescence study of ZnSe–ZnTe strained‐layer superlattices grown on InP substrates Journal of Applied Physics. 60: 773-778. DOI: 10.1063/1.337428 |
0.35 |
|
| 1986 |
Mino N, Kobayashi M, Konagai M, Takahashi K. Plasma‐assisted metalorganic chemical vapor deposition of ZnSe films Journal of Applied Physics. 59: 2216-2221. DOI: 10.1063/1.336362 |
0.467 |
|
| 1986 |
Mase T, Takei H, Konagai M, Takahashi K. Amorphous silicon solar cells on textured aluminium substrate prepared by electrical etching Solar Cells. 17: 191-200. DOI: 10.1016/0379-6787(86)90012-8 |
0.494 |
|
| 1986 |
Kobayashi M, Mino N, Konagai M, Takahashi K. ZnSe-ZnTe strained layer superlattice on InP substrate by molecular beam epitaxy Surface Science. 174: 550-555. DOI: 10.1016/0039-6028(86)90470-X |
0.379 |
|
| 1986 |
Tokumitsu E, Katoh T, Sung CP, Sandhu A, Kimura R, Konagai M, Takahashi K. Superlattice structures grown by metalorganic MBE Surface Science. 174: 43-47. DOI: 10.1016/0039-6028(86)90383-3 |
0.366 |
|
| 1985 |
Kim WY, Tasaki H, Takei H, Konagai M, Takahashi K. Amorphous-Si:H solar cells having a conversion efficiency of 10.5% by the separate chamber photo-CVD system The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1985.C-1-10Ln |
0.397 |
|
| 1985 |
Nishida S, Tasaki H, Konagai M, Takahashi K. Highly Conductive and Wide Band GaP Microcrystalline Silicon Films Prepared by Photochemical Vapor Deposition and Applications to Devices Mrs Proceedings. 49. DOI: 10.1557/Proc-49-47 |
0.491 |
|
| 1985 |
Mino N, Kobayashi M, Konagai M, Takahashi K. ZnSe:Mn DC-Electroluminescent Cells Using Di-π-Cyclopentadienyl Manganese as a New Manganese Source Fabricated by Plasma-Assisted MOCVD Japanese Journal of Applied Physics. 24: 383-385. DOI: 10.1143/Jjap.24.L383 |
0.317 |
|
| 1985 |
Kenne J, Yamada A, Konagai M, Takahashi K. Amorphous-silicon solar cells prepared by a combined photochemical-plasma cvd technique Japanese Journal of Applied Physics. 24: 997-1002. DOI: 10.1143/Jjap.24.997 |
0.47 |
|
| 1985 |
Yamada A, Konagai M, Takahashi K. Excimer-Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Japanese Journal of Applied Physics. 24: 1586-1589. DOI: 10.1143/Jjap.24.1586 |
0.453 |
|
| 1985 |
Tokumitsu E, Kudou Y, Konagai M, Takahashi K. Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources Japanese Journal of Applied Physics. 24: 1189-1192. DOI: 10.1143/Jjap.24.1189 |
0.409 |
|
| 1985 |
Yamada A, Kenne J, Konagai M, Takahashi K. Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application Applied Physics Letters. 46: 272-274. DOI: 10.1063/1.95655 |
0.484 |
|
| 1985 |
Ando H, Inuzuka H, Konagai M, Takahashi K. Photoenhanced metalorganic chemical vapor deposition of ZnSe films using diethylzinc and dimethylselenide Journal of Applied Physics. 58: 802-805. DOI: 10.1063/1.336199 |
0.463 |
|
| 1985 |
Mino N, Kobayashi M, Konagai M, Takahashi K. Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells Journal of Applied Physics. 58: 793-796. DOI: 10.1063/1.336197 |
0.528 |
|
| 1985 |
Nishida S, Tasaki H, Konagai M, Takahashi K. Highly conductive and wide band gap amorphous-microcrystalline mixed-phase silicon films prepared by photochemical vapor deposition Journal of Applied Physics. 58: 1427-1431. DOI: 10.1063/1.336071 |
0.47 |
|
| 1985 |
Takei H, Tanaka T, Kim WY, Konagai M, Takahashi K. High‐energy conversion efficiency amorphous silicon solar cells by photochemical vapor deposition Journal of Applied Physics. 58: 3664-3666. DOI: 10.1063/1.335724 |
0.317 |
|
| 1985 |
Kobayashi M, Mino N, Inuzuka H, Konagai M, Takahashi K. Modulation-doped ZnSe:Mn dc thin-film electroluminescent devices Journal of Applied Physics. 57: 4706-4710. DOI: 10.1063/1.335331 |
0.384 |
|
| 1985 |
Kobayashi M, Mino N, Konagai M, Takahashi K. Effects of indium diffusion on the properties of ZnSe: Mn dc thin-film electroluminescent devices Journal of Applied Physics. 57: 2905-2908. DOI: 10.1063/1.335229 |
0.395 |
|
| 1984 |
Ando H, Konagai M, Takahashi K. Photoenhanced metalorganic chemical vapor deposition of ZnSe films using diethylzinc and dimethylselenide The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1984.Ld-1-1 |
0.43 |
|
| 1984 |
Tanaka T, Kim WY, Konagai M, Takahashi K. Amorphous silicon solar cells fabricated by photochemical vapor deposition Applied Physics Letters. 45: 865-867. DOI: 10.1063/1.95435 |
0.465 |
|
| 1984 |
Inoue T, Tanaka T, Konagai M, Takahashi K. Electronic and optical properties of p‐type amorphous silicon and wide band‐gap amorphous silicon carbide films prepared by photochemical vapor deposition Applied Physics Letters. 44: 871-873. DOI: 10.1063/1.94962 |
0.472 |
|
| 1984 |
Matsushita T, Komori K, Konagai M, Takahashi K. High performance hydrogenated amorphous Si solar cells with graded boron-doped intrinsic layers prepared from disilane at high deposition rates Applied Physics Letters. 44: 1092-1094. DOI: 10.1063/1.94625 |
0.484 |
|
| 1984 |
Kenne J, Konagai M, Takahashi K. Effects of mercury and krypton on the glow discharge decomposition of disilane Applied Physics Letters. 44: 965-967. DOI: 10.1063/1.94612 |
0.409 |
|
| 1984 |
Lim KS, Konagai M, Takahashi K. A novel structure, high conversion efficiency p-SiC/graded p-SiC/i-Si/n-Si/metal substrate-type amorphous silicon solar cell Journal of Applied Physics. 56: 538-542. DOI: 10.1063/1.333943 |
0.464 |
|
| 1984 |
Tokumitsu E, Kudou Y, Konagai M, Takahashi K. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source Journal of Applied Physics. 55: 3163-3165. DOI: 10.1063/1.333344 |
0.488 |
|
| 1984 |
Sichanugrist P, Konagai M, Takahashi K. Theoretical analysis of amorphous silicon solar cells: Effects of interface recombination Journal of Applied Physics. 55: 1155-1161. DOI: 10.1063/1.333209 |
0.407 |
|
| 1984 |
Kenne J, Ohashi Y, Matsushita T, Konagai M, Takahashi K. High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane Journal of Applied Physics. 55: 560-564. DOI: 10.1063/1.333063 |
0.51 |
|
| 1984 |
Sichanugrist P, Konagai M, Takahashi K. Modeling and experimental performance of amorphous silicon solar cells with graded boron-doped active layers Solar Energy Materials. 11: 35-44. DOI: 10.1016/0165-1633(84)90026-1 |
0.455 |
|
| 1984 |
Nishida S, Konagai M, Takahashi K. Seebeck and piezoresistance effects in amorphous-microcrystalline mixed-phase silicon films and applications to power sensors and strain gauges Thin Solid Films. 112: 7-16. DOI: 10.1016/0040-6090(84)90497-8 |
0.443 |
|
| 1983 |
Inoue T, Konagai M, Takahashi K. Photochemical vapor deposition of undoped and n‐type amorphous silicon films produced from disilane Applied Physics Letters. 43: 774-776. DOI: 10.1063/1.94501 |
0.504 |
|
| 1983 |
Ohashi Y, Kenne J, Konagai M, Takahashi K. High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilane Applied Physics Letters. 42: 1028-1030. DOI: 10.1063/1.93830 |
0.471 |
|
| 1983 |
Sichanugrist P, Kumada M, Konagai M, Takahashi K, Komori K. Amorphous silicon solar cells with graded boron-doped active layers Journal of Applied Physics. 54: 6705-6707. DOI: 10.1063/1.331857 |
0.45 |
|
| 1983 |
Kodato S, Nishida S, Konagai M, Takahashi K. High-conductivity a-Si:H:F film and its performance for a power sensor and a strain gauge Journal of Non-Crystalline Solids. 1207-1210. DOI: 10.1016/0022-3093(83)90385-X |
0.408 |
|
| 1983 |
Sichanugrist P, Kumada M, Konagai M, Takahashi K, Komori K. Effect of B2H6 profile on the performance of a-Si:H p-i-n solar cells Journal of Non-Crystalline Solids. 1155-1158. DOI: 10.1016/0022-3093(83)90372-1 |
0.463 |
|
| 1982 |
Masu K, Konagai M, Nakatsuka S, Takahashi K. p-Ga0.2Al0.8As/p-Ga1-yAlyAs/n-Ga1-yAlyAs Solar Cells Japanese Journal of Applied Physics. 21: 99-102. DOI: 10.7567/Jjaps.21S2.99 |
0.321 |
|
| 1982 |
Taniguchi H, Konagai M, Lim KS, Sichanugrist P, Komori K, Takahashi K. Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane Japanese Journal of Applied Physics. 21: 219-224. DOI: 10.7567/Jjaps.21S2.219 |
0.413 |
|
| 1982 |
Masu K, Nakatsuka S, Konagai M, Takahashi K. The Role of Be in ( GaAl ) As / GaAs Solar Cells Journal of the Electrochemical Society. 129: 1623-1627. DOI: 10.1149/1.2124221 |
0.309 |
|
| 1982 |
Lim KS, Konagai M, Takahashi K. Observation of Electroluminescence from Amorphous Silicon Solar Cells at Room Temperature Japanese Journal of Applied Physics. 21: L473-L475. DOI: 10.1143/Jjap.21.L473 |
0.382 |
|
| 1982 |
Sano Y, Morigaki K, Hirabayashi I, Konagai M. Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F) Japanese Journal of Applied Physics. 21. DOI: 10.1143/Jjap.21.L291 |
0.31 |
|
| 1982 |
Masu K, Mishima T, Hiroi S, Konagai M, Takahashi K. Preparation of (AlxGa1−x)yIn1−yAs (0≤x≤0.5,y=0.47) lattice matched to InP substrates by molecular beam epitaxy Journal of Applied Physics. 53: 7558-7560. DOI: 10.1063/1.330125 |
0.362 |
|
| 1981 |
Masu K, Ying-Shu Q, Konagai M, Takahashi K. A Monolithic GaAs Solar Cell Array Japanese Journal of Applied Physics. 20: 95-98. DOI: 10.7567/Jjaps.20S2.95 |
0.377 |
|
| 1981 |
Nishihata K, Komori K, Konagai M, Takahashi K. Effect of Fluorine on the Photovoltaic Properties of Amorphous Silicon Prepared by DC Glow Discharge Japanese Journal of Applied Physics. 20: 151. DOI: 10.7567/Jjaps.20S2.151 |
0.456 |
|
| 1981 |
Konagai M, Takahashi K, Nishihata K, Shirakawa H, Ikeda S. Electrical Properties of Polyacetylene Thin Films and Applica-tion to Solar Cells The Transactions of the Institute of Electrical Engineers of Japan.A. 101: 103-108. DOI: 10.1541/Ieejfms1972.101.103 |
0.417 |
|
| 1981 |
Miyamoto H, Konagai M, Takahashi K. Model for Localized States Distribution and Light Dependent Effects in Amorphous Silicon Solar Cells Japanese Journal of Applied Physics. 20: 1691-1699. DOI: 10.1143/Jjap.20.1691 |
0.408 |
|
| 1980 |
Masu K, Konagai M, Takahashi K. (GaAl)As/GaAs Solar Cells–Dopant Study of Zn and Be Japanese Journal of Applied Physics. 19: 191. DOI: 10.7567/Jjaps.19S2.191 |
0.373 |
|
| 1980 |
Konagai M, Miyamoto H, Takahashi K. Photovoltaic Properties of a Si–F–H and a·Si–H Prepared by DC Glow Discharge Japanese Journal of Applied Physics. 19: 105-109. DOI: 10.7567/Jjaps.19S2.105 |
0.476 |
|
| 1980 |
Konagai M, Miyamoto H, Takahashi K. Minority Carrier Diffusion Length in Amorphous Si Schottky Barrier Solar Cells Japanese Journal of Applied Physics. 19: 1923-1928. DOI: 10.1143/Jjap.19.1923 |
0.345 |
|
| 1980 |
Konagai M, Takahashi K. Amorphous Si‐F‐H solar cells prepared by dc glow discharge Applied Physics Letters. 36: 599-601. DOI: 10.1063/1.91561 |
0.439 |
|
| 1979 |
Charan S, Konagai M, Takahashi K. Series resistance effects in (GaAl)As/GaAs concentrator solar cells Journal of Applied Physics. 50: 963-968. DOI: 10.1063/1.325992 |
0.306 |
|
| 1979 |
Suzuki T, Konagai M, Takahashi K. Electrical properties of Zn+-doped (AlGa)As prepared by molecular beam epitaxy and its use in shallow junction solar cells Thin Solid Films. 60: 85-89. DOI: 10.1016/0040-6090(79)90350-X |
0.467 |
|
| 1979 |
Sugimoto M, Konagai M, Takahashi K. Formation of GaAs thin films for photovoltaic applications by peeled film technology Electrical Engineering in Japan. 99: 1-7. DOI: 10.1002/Eej.4390990401 |
0.409 |
|
| 1978 |
Konagai M, Sugimoto M, Takahashi K. High efficiency GaAs thin film solar cells by peeled film technology Journal of Crystal Growth. 45: 277-280. DOI: 10.1016/0022-0248(78)90449-9 |
0.48 |
|
| 1977 |
Konagai M, Katsukawa K, Takahashi K. (GaAl)As/GaAs heterojunction phototransistors with high current gain Journal of Applied Physics. 48: 4389-4394. DOI: 10.1063/1.323393 |
0.336 |
|
| 1976 |
Konagai M, Takahashi K. Theoretical analysis of graded-band-gap gallium-aluminum arsenide/gallium arsenide p-Ga1t̄xAlxAs/p-GaAs/n-GaAs solar cells Solid-State Electronics. 19: 259-264. DOI: 10.1016/0038-1101(76)90172-6 |
0.387 |
|
| 1975 |
Konagai M, Takahashi K. Graded‐band‐gap pGa1−xAlxAs‐nGaAs heterojunction solar cells Journal of Applied Physics. 46: 3542-3546. DOI: 10.1063/1.322083 |
0.375 |
|
| 1975 |
Konagai M, Takahashi K. (GaAl)As‐GaAs heterojunction transistors with high injection efficiency Journal of Applied Physics. 46: 2120-2124. DOI: 10.1063/1.321850 |
0.321 |
|
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