| Year |
Citation |
Score |
| 2021 |
Deringer VL, Bernstein N, Csányi G, Ben Mahmoud C, Ceriotti M, Wilson M, Drabold DA, Elliott SR. Origins of structural and electronic transitions in disordered silicon. Nature. 589: 59-64. PMID 33408379 DOI: 10.1038/s41586-020-03072-z |
0.556 |
|
| 2020 |
Thapa R, Bhattarai B, Kozicki MN, Subedi KN, Drabold DA. Structure and charge transport of amorphous Cu-doped
Ta2O5
: An
ab initio
study Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.064603 |
0.655 |
|
| 2020 |
Alajerami YS, Drabold DA, Mhareb MHA, Subedi KN, Cimatu KLA, Chen G. Physical, structural, and shielding properties of cadmium bismuth borate-based glasses Journal of Applied Physics. 127: 175102. DOI: 10.1063/1.5143116 |
0.403 |
|
| 2020 |
Alajerami YS, Drabold D, Mhareb MHA, Cimatu KLA, Chen G, Kurudirek M. Radiation shielding properties of bismuth borate glasses doped with different concentrations of cadmium oxides Ceramics International. 46: 12718-12726. DOI: 10.1016/J.Ceramint.2020.02.039 |
0.4 |
|
| 2019 |
Prasai K, Jiang J, Mishkin A, Shyam B, Angelova S, Birney R, Drabold DA, Fazio M, Gustafson EK, Harry G, Hoback S, Hough J, Lévesque C, MacLaren I, Markosyan A, et al. High Precision Detection of Change in Intermediate Range Order of Amorphous Zirconia-Doped Tantala Thin Films Due to Annealing. Physical Review Letters. 123: 045501. PMID 31491265 DOI: 10.1103/Physrevlett.123.045501 |
0.693 |
|
| 2019 |
Bernstein N, Bhattarai B, Csányi G, Drabold DA, Elliott SR, Deringer V. Quantifying Chemical Structure and Machine-Learned Atomic Energies in Amorphous and Liquid Silicon. Angewandte Chemie (International Ed. in English). PMID 30835962 DOI: 10.1002/Anie.201902625 |
0.758 |
|
| 2019 |
Itoh S, Ordejón P, Drabold DA, Martin RM. Structure and energetics of giant fullerenes: An order-N molecular-dynamics study. Physical Review. B, Condensed Matter. 53: 2132-2140. PMID 9983678 DOI: 10.1103/Physrevb.53.2132 |
0.532 |
|
| 2019 |
Subedi KN, Prasai K, Kozicki MN, Drabold DA. Structural origins of electronic conduction in amorphous copper-doped alumina Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.065605 |
0.759 |
|
| 2019 |
Limbu DK, Madueke MU, Atta-Fynn R, Drabold DA, Biswas P. Ab initio density-functional studies of 13-atom Cu and Ag clusters Journal of Physics: Conference Series. 1252: 012009. DOI: 10.1088/1742-6596/1252/1/012009 |
0.806 |
|
| 2019 |
Paudel D, Atta-Fynn R, Drabold DA, Biswas P. Effect of low-temperature annealing on void-related microstructure in amorphous silicon: A computational study Journal of Physics: Conference Series. 1252: 012005. DOI: 10.1088/1742-6596/1252/1/012005 |
0.784 |
|
| 2019 |
Bhattarai B, Thapa R, Drabold DA. Ab initio inversion of structure and the lattice dynamics of a metallic glass: the case of Pd40Ni40P20 Modelling and Simulation in Materials Science and Engineering. 27: 075002. DOI: 10.1088/1361-651X/Ab2Ebe |
0.707 |
|
| 2019 |
Atta-Fynn R, Drabold DA, Biswas P. First principles modeling of the structural, electronic, and vibrational properties of Ni40Pd40P20 bulk metallic glass Journal of Non-Crystalline Solids: X. 1: 100004. DOI: 10.1016/J.NOCX.2018.100004 |
0.802 |
|
| 2019 |
Igram D, Castillo HE, Drabold D. Structure and dynamics of a silver-doped chalcogenide glass: An ab initio study Journal of Non-Crystalline Solids. 514: 1-9. DOI: 10.1016/J.Jnoncrysol.2019.03.012 |
0.816 |
|
| 2018 |
Bhattarai B, Biswas P, Atta-Fynn R, Drabold DA. Amorphous graphene: a constituent part of low density amorphous carbon. Physical Chemistry Chemical Physics : Pccp. PMID 29999055 DOI: 10.1039/C8Cp02545B |
0.789 |
|
| 2018 |
Limbu DK, Atta-Fynn R, Drabold DA, Elliott SR, Biswas P. Information-driven inverse approach to disordered solids: Applications to amorphous silicon Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.115602 |
0.78 |
|
| 2018 |
Paudel D, Atta-Fynn R, Drabold DA, Elliott SR, Biswas P. Small-angle x-ray scattering in amorphous silicon: A computational study Physical Review B. 97. DOI: 10.1103/Physrevb.97.184202 |
0.787 |
|
| 2018 |
Igram D, Bhattarai B, Biswas P, Drabold D. Large and realistic models of amorphous silicon Journal of Non-Crystalline Solids. 492: 27-32. DOI: 10.1016/J.Jnoncrysol.2018.04.011 |
0.82 |
|
| 2018 |
Bhattarai B, Pandey A, Drabold D. Evolution of amorphous carbon across densities: An inferential study Carbon. 131: 168-174. DOI: 10.1016/J.Carbon.2018.01.103 |
0.761 |
|
| 2018 |
Prasai K, Subedi KN, Ferris K, Biswas P, Drabold DA. Spatial Projection of Electronic Conductivity: The Example of Conducting Bridge Memory Materials Physica Status Solidi (Rrl) - Rapid Research Letters. 12: 1800238. DOI: 10.1002/Pssr.201800238 |
0.772 |
|
| 2017 |
Prasai K, Chen G, Drabold DA. Amorphous to amorphous insulator-metal transition in
GeSe3
:Ag glasses Physical Review Materials. 1. DOI: 10.1103/Physrevmaterials.1.015603 |
0.662 |
|
| 2017 |
Sadjadi M, Bhattarai B, Drabold DA, Thorpe MF, Wilson M. Refining glass structure in two dimensions Physical Review B. 96. DOI: 10.1103/Physrevb.96.201405 |
0.749 |
|
| 2017 |
Limbu DK, Atta-Fynn R, Drabold DA, Elliott SR, Biswas P. Structural properties of transition-metal clusters via force-biased Monte Carlo and
ab initio
calculations: A comparative study Physical Review B. 96. DOI: 10.1103/Physrevb.96.174208 |
0.788 |
|
| 2017 |
Atta-Fynn R, Drabold DA, Elliott SR, Biswas P. First-principles simulations of vibrational decay and lifetimes ina-Si:H anda-Si:D Physical Review B. 95. DOI: 10.1103/Physrevb.95.104205 |
0.79 |
|
| 2017 |
Biswas P, Paudel D, Atta-Fynn R, Drabold DA, Elliott SR. Morphology and Number Density of Voids in Hydrogenated Amorphous Silicon: AnAb InitioStudy Physical Review Applied. 7. DOI: 10.1103/Physrevapplied.7.024013 |
0.793 |
|
| 2017 |
Pandey A, Scherich H, Drabold D. Density functional theory model of amorphous zinc oxide (a-ZnO) and a-X0.375Z0.625O (X= Al, Ga and In) Journal of Non-Crystalline Solids. 455: 98-101. DOI: 10.1016/J.Jnoncrysol.2016.10.035 |
0.671 |
|
| 2017 |
Bhattarai B, Drabold D. Amorphous carbon at low densities: An ab initio study Carbon. 115: 532-538. DOI: 10.1016/J.Carbon.2017.01.031 |
0.685 |
|
| 2016 |
Pandey A, Biswas P, Drabold DA. Inversion of diffraction data for amorphous materials. Scientific Reports. 6: 33731. PMID 27652893 DOI: 10.1038/Srep33731 |
0.799 |
|
| 2016 |
Pandey A, Biswas P, Bhattarai B, Drabold DA. Realistic inversion of diffraction data for an amorphous solid: The case of amorphous silicon Physical Review B. 94. DOI: 10.1103/Physrevb.94.235208 |
0.828 |
|
| 2016 |
Prasai K, Biswas P, Drabold DA. Electrons and phonons in amorphous semiconductors Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/7/073002 |
0.837 |
|
| 2016 |
Bhattarai B, Drabold DA. Vibrations in amorphous silica Journal of Non-Crystalline Solids. 439: 6-14. DOI: 10.1016/J.Jnoncrysol.2016.02.002 |
0.678 |
|
| 2016 |
Prasai K, Biswas P, Drabold DA. Electronically designed amorphous carbon and silicon Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532973 |
0.822 |
|
| 2015 |
Prasai K, Biswas P, Drabold DA. Sculpting the band gap: a computational approach. Scientific Reports. 5: 15522. PMID 26490203 DOI: 10.1038/Srep15522 |
0.822 |
|
| 2015 |
Biswas P, Drabold DA. Correlations between higher-order rings and microvoids in hydrogenated amorphous silicon Materials Research Society Symposium Proceedings. 1757: 26-31. DOI: 10.1557/Opl.2015.47 |
0.806 |
|
| 2015 |
Pandey A, Biswas P, Drabold DA. Force-enhanced atomic refinement: Structural modeling with interatomic forces in a reverse Monte Carlo approach applied to amorphous Si and SiO2 Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.155205 |
0.806 |
|
| 2015 |
Sharma R, Prasai K, Drabold DA, Adarsh KV. Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films Aip Advances. 5. DOI: 10.1063/1.4927543 |
0.68 |
|
| 2015 |
Li Y, Drabold DA. Electronic signatures of topological disorder in amorphous graphene Iet Circuits, Devices and Systems. 9: 13-18. DOI: 10.1049/Iet-Cds.2014.0034 |
0.582 |
|
| 2015 |
Prasai B, Drabold DA. Transition metals in phase-change memory materials: Impact upon crystallization Springer Series in Materials Science. 215: 511-524. DOI: 10.1007/978-3-319-15675-0_19 |
0.328 |
|
| 2014 |
Prasai K, Drabold DA. Simulations of silver-doped germanium-selenide glasses and their response to radiation. Nanoscale Research Letters. 9: 594. PMID 25426005 DOI: 10.1186/1556-276X-9-594 |
0.701 |
|
| 2014 |
Barik AR, Bapna M, Drabold DA, Adarsh KV. Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe2 thin film. Scientific Reports. 4: 3686. PMID 24418896 DOI: 10.1038/Srep03686 |
0.375 |
|
| 2014 |
Pandey A, Cai B, Podraza N, Drabold DA. Electrical activity of boron and phosphorus in hydrogenated amorphous Silicon Physical Review Applied. 2. DOI: 10.1103/Physrevapplied.2.054005 |
0.637 |
|
| 2014 |
Biswas P, Drabold DA, Atta-Fynn R. Microstructure from joint analysis of experimental data and ab initio interactions: Hydrogenated amorphous silicon Journal of Applied Physics. 116. DOI: 10.1063/1.4905024 |
0.8 |
|
| 2014 |
Haycock BJ, Lander G, Rice MK, Prasai K, Prasai B, Drabold DA, Lewis JP. High-throughput evaluation in nitrogen doping of amorphous titanium dioxide Physica Status Solidi (B) Basic Research. 251: 1225-1230. DOI: 10.1002/Pssb.201451010 |
0.81 |
|
| 2013 |
Pfanner G, Freysoldt C, Neugebauer J, Inam F, Drabold D, Jarolimek K, Zeman M. Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.125308 |
0.728 |
|
| 2013 |
Prasai B, Chen G, Drabold DA. Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge2Sb2Te5 Applied Physics Letters. 102. DOI: 10.1063/1.4789877 |
0.782 |
|
| 2013 |
Prasai B, Kordesch ME, Drabold DA, Chen G. Atomistic origin of rapid crystallization of Ag-doped Ge-Sb-Te alloys: A joint experimental and theoretical study Physica Status Solidi (B) Basic Research. 250: 1785-1790. DOI: 10.1002/Pssb.201349150 |
0.784 |
|
| 2013 |
Drabold DA, Davis EA. Honoring S. R. Elliott Physica Status Solidi (B). 250: 923-926. DOI: 10.1002/Pssb.201341618 |
0.287 |
|
| 2013 |
Li Y, Drabold DA. Symmetry breaking and low energy conformational fluctuations in amorphous graphene Physica Status Solidi (B) Basic Research. 250: 1012-1019. DOI: 10.1002/Pssb.201248481 |
0.484 |
|
| 2013 |
Zhang ML, Drabold DA. Radiation fields for nanoscale systems Physica Status Solidi (B) Basic Research. 250: 1052-1061. DOI: 10.1002/Pssb.201248479 |
0.336 |
|
| 2012 |
Cai B, Drabold DA. Theoretical studies of structure and doping of hydrogenated amorphous silicon Materials Research Society Symposium Proceedings. 1321: 297-305. DOI: 10.1557/Opl.2011.1095 |
0.586 |
|
| 2012 |
Zhang ML, Drabold DA. Theory of temperature coefficient of resistivity: Application to amorphous Si and Ge Epl. 98. DOI: 10.1209/0295-5075/98/17005 |
0.459 |
|
| 2012 |
Zhang ML, Drabold DA. Approximate theory of temperature coefficient of resistivity of amorphous semiconductors Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.125135 |
0.438 |
|
| 2012 |
Zelený M, Hegedüs J, Foster AS, Drabold DA, Elliott SR, Nieminen RM. Ab initio study of Cu diffusion in α-cristobalite New Journal of Physics. 14. DOI: 10.1088/1367-2630/14/11/113029 |
0.529 |
|
| 2012 |
Prasai B, Cai B, Underwood MK, Lewis JP, Drabold DA. Properties of amorphous and crystalline titanium dioxide from first principles Journal of Materials Science. 47: 7515-7521. DOI: 10.1007/S10853-012-6439-6 |
0.821 |
|
| 2011 |
Zhang M, Drabold DA. The work done by an external electromagnetic field. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 085801. PMID 21411902 DOI: 10.1088/0953-8984/23/8/085801 |
0.354 |
|
| 2011 |
Zhang M, Drabold DA. Comparison of the Kubo formula, the microscopic response method, and the Greenwood formula. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 83: 012103. PMID 21405730 DOI: 10.1103/Physreve.83.012103 |
0.376 |
|
| 2011 |
Cai B, Drabold DA. Properties of amorphous GaN from first-principles simulations Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075216 |
0.542 |
|
| 2011 |
Prasai B, Drabold DA. Ab initio simulation of solid electrolyte materials in liquid and glassy phases Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.094202 |
0.79 |
|
| 2011 |
Cai B, Zhang X, Drabold DA. Building block modeling technique: Application to ternary chalcogenide glasses g-Ge2As4Se4 and g-AsGe 0.8Se0.8 Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.092202 |
0.575 |
|
| 2011 |
Drabold DA, Li Y, Cai B, Zhang M. Urbach tails of amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.045201 |
0.688 |
|
| 2011 |
Cai B, Goodwin AL, Drabold DA. Spatial uniformity as a principle for determination of atomistic structural models Modelling and Simulation in Materials Science and Engineering. 19. DOI: 10.1088/0965-0393/19/3/035010 |
0.555 |
|
| 2011 |
Drabold DA. Silicon: The gulf between crystalline and amorphous Physica Status Solidi - Rapid Research Letters. 5: 359-360. DOI: 10.1002/Pssr.201105444 |
0.343 |
|
| 2011 |
Drabold D, Demkov A, Lewis JP, Ortega J, Windl W, Lindsay S. Front Cover: Large-scale simulations in materials science (Phys. Status Solidi B 9/2011) Physica Status Solidi (B). 248: n/a-n/a. DOI: 10.1002/Pssb.201190027 |
0.761 |
|
| 2011 |
Lewis JP, Jelínek P, Ortega J, Demkov AA, Trabada DG, Haycock B, Wang H, Adams G, Tomfohr JK, Abad E, Drabold DA. Advances and applications in the FIREBALL ab initio tight-binding molecular-dynamics formalism Physica Status Solidi (B) Basic Research. 248: 1989-2007. DOI: 10.1002/Pssb.201147259 |
0.799 |
|
| 2011 |
Li Y, Inam F, Kumar A, Thorpe MF, Drabold DA. Pentagonal puckering in a sheet of amorphous graphene Physica Status Solidi (B) Basic Research. 248: 2082-2086. DOI: 10.1002/Pssb.201147195 |
0.767 |
|
| 2011 |
Zhang M, Drabold DA. The microscopic response method: Theory of transport for systems with both topological and thermal disorder Physica Status Solidi (B) Basic Research. 248: 2015-2026. DOI: 10.1002/Pssb.201147036 |
0.365 |
|
| 2011 |
Prasai B, Cai B, Drabold DA, Underwood MK, Lewis AP. Ab-initio calculation of structural and electrical properties of amorphous TiO 2 Materials Science and Technology Conference and Exhibition 2011, Ms and T'11. 1: 12-20. |
0.439 |
|
| 2010 |
Cliffe MJ, Dove MT, Drabold DA, Goodwin AL. Structure determination of disordered materials from diffraction data. Physical Review Letters. 104: 125501. PMID 20366543 DOI: 10.1103/Physrevlett.104.125501 |
0.493 |
|
| 2010 |
Zhang M, Drabold DA. Phonon driven transport in amorphous semiconductors: transition probabilities The European Physical Journal B. 77: 7-23. DOI: 10.1140/Epjb/E2010-00233-0 |
0.444 |
|
| 2010 |
Zhang ML, Drabold DA. Alternative approach to computing transport coefficients: Application to conductivity and hall coefficient of hydrogenated amorphous silicon Physical Review Letters. 105. DOI: 10.1103/Physrevlett.105.186602 |
0.37 |
|
| 2010 |
Cliffe MJ, Dove MT, Drabold DA, Goodwin AL. Structure determination of disordered materials from diffraction data Physical Review Letters. 104. DOI: 10.1103/PhysRevLett.104.125501 |
0.295 |
|
| 2010 |
Zhang ML, Drabold DA. Electrical conductivity calculations: Structural disorder and the role of degenerate or resonant electron states Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.085210 |
0.397 |
|
| 2010 |
Santos I, Castrillo P, Windl W, Drabold DA, Pelaz L, Marqués LA. Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.033203 |
0.667 |
|
| 2010 |
Cai B, Drabold DA, Elliott SR. Structural fingerprints of electronic change in the phase-change-material: Ge2 Sb2 Te5 Applied Physics Letters. 97. DOI: 10.1063/1.3516039 |
0.59 |
|
| 2010 |
Chen G, Inam F, Drabold DA. Structural origin of the intermediate phase in Ge-Se glasses Applied Physics Letters. 97. DOI: 10.1063/1.3495775 |
0.704 |
|
| 2010 |
Kapko V, Drabold DA, Thorpe MF. Front Cover (Phys. Status Solidi B 5/2010) Physica Status Solidi (B). 247: n/a-n/a. DOI: 10.1002/Pssb.201090007 |
0.512 |
|
| 2010 |
Kapko V, Drabold DA, Thorpe MF. Electronic structure of a realistic model of amorphous graphene Physica Status Solidi (B) Basic Research. 247: 1197-1200. DOI: 10.1002/Pssb.200945581 |
0.591 |
|
| 2010 |
Inam F, Lewis JP, Drabold DA. Hidden structure in amorphous solids Physica Status Solidi (a) Applications and Materials Science. 207: 599-604. DOI: 10.1002/Pssa.200982877 |
0.79 |
|
| 2009 |
Biswas P, Tafen DN, Inam F, Cai B, Drabold DA. Materials modeling by design: applications to amorphous solids. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 084207. PMID 21817359 DOI: 10.1088/0953-8984/21/8/084207 |
0.808 |
|
| 2009 |
Drabold DA. Topics in the theory of amorphous materials European Physical Journal B. 68: 1-21. DOI: 10.1140/Epjb/E2009-00080-0 |
0.47 |
|
| 2009 |
Cai B, Drabold DA. Ab initio models of amorphous InN Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.195204 |
0.625 |
|
| 2009 |
Chakraborty S, Drabold DA. Static and dynamic properties of hydrogenated amorphous silicon with voids Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/PhysRevB.79.115214 |
0.397 |
|
| 2009 |
Chaudhuri I, Inam F, Drabold DA. Ab initio determination of ion traps and the dynamics of silver in silver-doped chalcogenide glass Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.100201 |
0.668 |
|
| 2009 |
Antoine K, Jain H, Vlcek M, Senanayake SD, Drabold DA. Chemical origin of polarization-dependent photoinduced changes in an As36 Se64 glass film via in situ synchrotron x-ray photoelectron spectroscopy Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.054204 |
0.554 |
|
| 2009 |
Inam F, Tafen DN, Chen G, Drabold DA. Competing stoichiometric phases and the intermediate phase in GexSe1-x glasses Physica Status Solidi (B) Basic Research. 246: 1849-1853. DOI: 10.1002/Pssb.200982016 |
0.792 |
|
| 2008 |
Pan Y, Inam F, Zhang M, Drabold DA. Atomistic origin of urbach tails in amorphous silicon. Physical Review Letters. 100: 206403. PMID 18518560 DOI: 10.1103/Physrevlett.100.206403 |
0.77 |
|
| 2008 |
Chakraborty S, Bobela DC, Taylor PC, Drabold DA. Voids in hydrogenated amorphous silicon: A comparison of ab initio simulations and proton NMR studies Materials Research Society Symposium Proceedings. 1066: 279-284. DOI: 10.1557/Proc-1066-A11-02 |
0.463 |
|
| 2008 |
Zhang M, Pan Y, Inam F, Drabold DA. Semiquantitative scattering theory of amorphous materials Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.195208 |
0.742 |
|
| 2008 |
Pan Y, Zhang M, Drabold DA. Topological and topological-electronic correlations in amorphous silicon Journal of Non-Crystalline Solids. 354: 3480-3485. DOI: 10.1016/J.Jnoncrysol.2008.02.021 |
0.611 |
|
| 2008 |
Inam F, Drabold DA. Theoretical study of an amorphous chalcogenide surface Journal of Non-Crystalline Solids. 354: 2495-2499. DOI: 10.1016/J.Jnoncrysol.2007.09.118 |
0.658 |
|
| 2008 |
Abtew TA, Zhang M, Pan Y, Drabold DA. Electrical conductivity and Meyer-Neldel rule: The role of localized states in hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 354: 2909-2913. DOI: 10.1016/J.Jnoncrysol.2007.09.103 |
0.61 |
|
| 2008 |
Drabold DA, Abtew TA, Inam F, Pan Y. Network structure and dynamics of hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 354: 2149-2154. DOI: 10.1016/J.Jnoncrysol.2007.09.081 |
0.777 |
|
| 2008 |
Biswas P, Drabold DA. Inverse approach to atomistic modeling: Applications to a-Si:H and g-GeSe2 Journal of Non-Crystalline Solids. 354: 2697-2701. DOI: 10.1016/J.Jnoncrysol.2007.09.043 |
0.823 |
|
| 2008 |
Drabold DA, Zhang X, Li J. First principles molecular dynamics and photo structural response in amorphous silicon and chalcogenide glasses Photo-Induced Metastability in Amorphous Semiconductors. 260-278. DOI: 10.1002/9783527602544.ch15 |
0.368 |
|
| 2007 |
Abtew TA, Inam F, Drabold DA. Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon Epl. 79. DOI: 10.1209/0295-5075/79/36001 |
0.712 |
|
| 2007 |
Biswas P, Atta-Fynn R, Drabold DA. Experimentally constrained molecular relaxation: The case of hydrogenated amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.125210 |
0.82 |
|
| 2007 |
Abtew TA, Zhang M, Drabold DA. Ab initio estimate of temperature dependence of electrical conductivity in a model amorphous material: Hydrogenated amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.045212 |
0.488 |
|
| 2007 |
Abtew TA, Drabold DA. Ab initio models of amorphous Si1-x Gex: H Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/PhysRevB.75.045201 |
0.439 |
|
| 2007 |
Inam F, Shatnawi MT, Tafen D, Billinge SJL, Chen P, Drabold DA. An intermediate phase in GexSe1-x glasses: Experiment and simulation Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/45/455206 |
0.801 |
|
| 2007 |
Biswas P, Atta-Fynn R, Chakraborty S, Drabold DA. Real space information from fluctuation electron microscopy: Applications to amorphous silicon Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/45/455202 |
0.801 |
|
| 2007 |
Abelson J, Drabold D, Elliot S, Voyles P. Proceedings of the International Conference on Nanoscale Order in Amorphous and Partially Ordered Solids, Trinity College, Cambridge, UK, July 9–11, 2007 Journal of Physics: Condensed Matter. 19: 450301. DOI: 10.1088/0953-8984/19/45/450301 |
0.603 |
|
| 2006 |
Abtew TA, Drabold DA. Hydrogen dynamics and light-induced structural changes in hydrogenated amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.085201 |
0.481 |
|
| 2006 |
Abtew TA, Drabold DA. Atomistic simulation of light-induced changes in hydrogenated amorphous silicon Journal of Physics Condensed Matter. 18: L1-L6. DOI: 10.1088/0953-8984/18/1/L01 |
0.469 |
|
| 2006 |
Drabold DA, Estreicher SK. Defect theory: An armchair history Topics in Applied Physics. 104: 11-28. DOI: 10.1007/11690320_2 |
0.259 |
|
| 2006 |
Drabold DA, Abtew TA. Defects in amorphous semiconductors: Amorphous silicon Topics in Applied Physics. 104: 245-268. DOI: 10.1007/11690320_11 |
0.44 |
|
| 2006 |
Abtew TA, Drabold DA. Light-induced structural changes in hydrogenated amorphous silicon Journal of Optoelectronics and Advanced Materials. 8: 1979-1988. |
0.377 |
|
| 2006 |
Drabold DA, Estreicher SK. Topics in Applied Physics: Preface Topics in Applied Physics. 104: VII-VIII. |
0.221 |
|
| 2005 |
Bandyopadhyay K, Bhattacharya AK, Biswas P, Drabold DA. Maximum entropy and the problem of moments: a stable algorithm. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 71: 057701. PMID 16089706 DOI: 10.1103/Physreve.71.057701 |
0.766 |
|
| 2005 |
Tafen DN, Drabold DA, Mitkova M. Silver transport in GexSe1-x:Ag materials: Ab initio simulation of a solid electrolyte Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.054206 |
0.771 |
|
| 2005 |
Tafen DN, Drabold DA. Models and modeling schemes for binary IV-VI glasses Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.054206 |
0.789 |
|
| 2005 |
Biswas P, Tafen DN, Drabold DA. Experimentally constrained molecular relaxation: The case of glassy GeSe 2 Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.054204 |
0.826 |
|
| 2005 |
Ludlam JJ, Taraskin SN, Elliott SR, Drabold DA. Universal features of localized eigenstates in disordered systems Journal of Physics Condensed Matter. 17: L321-L327. DOI: 10.1088/0953-8984/17/30/L01 |
0.538 |
|
| 2005 |
Abtew TA, Drabold DA, Taylor PC. Studies of silicon dihydride and its potential role in light-induced metastability in hydrogenated amorphous silicon Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1943488 |
0.39 |
|
| 2005 |
Tafen DN, Drabold DA, Mitkova M. Direct ab initio simulation of silver ion dynamics in chalcogenide glasses Physica Status Solidi (B) Basic Research. 242: R55-R57. DOI: 10.1002/Pssb.200510023 |
0.756 |
|
| 2004 |
Atta-Fynn R, Biswas P, Drabold DA. Electron-phonon coupling is large for localized states Physical Review B - Condensed Matter and Materials Physics. 69: 245204-1-245204-5. DOI: 10.1103/Physrevb.69.245204 |
0.819 |
|
| 2004 |
Biswas P, Atta-Fynn R, Drabold DA. Reverse Monte Carlo modeling of amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 69: 195207-1-195207-5. DOI: 10.1103/Physrevb.69.195207 |
0.822 |
|
| 2004 |
Atta-Fynn R, Biswas P, Ordejón P, Drabold DA. Systematic study of electron localization in an amorphous semiconductor Physical Review B - Condensed Matter and Materials Physics. 69: 852071-8520710. DOI: 10.1103/Physrevb.69.085207 |
0.818 |
|
| 2004 |
Drabold DA, Mousseau N. Michael F Thorpe Journal of Physics: Condensed Matter. 16. DOI: 10.1088/0953-8984/16/44/E01 |
0.532 |
|
| 2004 |
Abtew TA, Drabold DA. Thermally driven hopping and electron transport in amorphous materials from density functional calculations Journal of Physics Condensed Matter. 16: S5289-S5296. DOI: 10.1088/0953-8984/16/44/025 |
0.412 |
|
| 2004 |
Biswas P, De Tafen N, Atta-Fynn R, Drabold D. The inclusion of experimental information in first principles modelling of materials Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/44/014 |
0.815 |
|
| 2004 |
Biswas P, Atta-Fynn R, Drabold DA. Constrained Monte Carlo approach to modeling disordered materials Microscopy and Microanalysis. 10: 804-805. DOI: 10.1017/S1431927604884460 |
0.781 |
|
| 2004 |
Antoine K, Jain H, Li J, Drabold DA, Vlček M, Miller AC. Photoinduced changes in the electronic structure of As4Se 3 glass Journal of Non-Crystalline Solids. 349: 162-167. DOI: 10.1016/S0022-3093(03)00402-2 |
0.542 |
|
| 2003 |
Tafen DN, Drabold DA. Realistic models of binary glasses from models of tetrahedral amorphous semiconductors Physical Review B - Condensed Matter and Materials Physics. 68: 1652081-1652085. DOI: 10.1103/Physrevb.68.165208 |
0.781 |
|
| 2003 |
Yu M, Jayanthi CS, Drabold DA, Wu SY. Enhanced radiative transition in SinGem nanoclusters Physical Review B - Condensed Matter and Materials Physics. 68: 354041-354048. DOI: 10.1103/Physrevb.68.035404 |
0.386 |
|
| 2003 |
Li J, Drabold DA. Electron hopping between localized states: A simulation of the finite-temperature Anderson problem using density functional methods Physical Review B - Condensed Matter and Materials Physics. 68: 331031-331034. DOI: 10.1103/Physrevb.68.033103 |
0.371 |
|
| 2003 |
Li J, Drabold DA. Electron hopping between localized states: A simulation of the finite-temperature Anderson problem using density functional methods Physical Review B. 68. DOI: 10.1103/physrevb.68.033103 |
0.339 |
|
| 2003 |
Durandurdu M, Drabold DA. High-pressure phases of amorphous and crystalline silicon Physical Review B - Condensed Matter and Materials Physics. 67: 2121011-2121013. DOI: 10.1103/Physrevb.67.212101 |
0.636 |
|
| 2003 |
Blaineau S, Jund P, Drabold DA. Physical properties of a GeS2 glass using approximate ab initio molecular dynamics Physical Review B - Condensed Matter and Materials Physics. 67: 942041-942046. DOI: 10.1103/Physrevb.67.094204 |
0.473 |
|
| 2003 |
Drabold DA, Li J, Tafen DN. Simulations of arsenic selenide glasses Journal of Physics Condensed Matter. 15: S1529-S1536. DOI: 10.1088/0953-8984/15/16/302 |
0.768 |
|
| 2003 |
Chen G, Jain H, Vlcek M, Khalid S, Li J, Drabold DA, Elliott SR. Observation of light polarization-dependent structural changes in chalcogenide glasses Applied Physics Letters. 82: 706-708. DOI: 10.1063/1.1541942 |
0.64 |
|
| 2003 |
Chen G, Jain H, Vlček M, Li J, Drabold DA, Khalid S, Elliott SR. Study of light-induced vector changes in the local atomic structure of As-Se glasses by EXAFS Journal of Non-Crystalline Solids. 326: 257-262. DOI: 10.1016/S0022-3093(03)00403-4 |
0.638 |
|
| 2003 |
Antoine K, Li J, Drabold DA, Jain H, Vlček M, Miller AC. Photoinduced changes in the electronic structure of As2Se 3 glass Journal of Non-Crystalline Solids. 326: 248-256. DOI: 10.1016/S0022-3093(03)00402-2 |
0.377 |
|
| 2002 |
Taraskin SN, Drabold DA, Elliott SR. Spatial decay of the single-particle density matrix in insulators: analytic results in two and three dimensions. Physical Review Letters. 88: 196405. PMID 12005655 DOI: 10.1103/Physrevlett.88.196405 |
0.52 |
|
| 2002 |
Li J, Drabold DA, Krishnaswami S, Chen G, Jain H. Electronic structure of glassy chalcogenides As4Se4 and As2Se3: a joint theoretical and experimental study. Physical Review Letters. 88: 046803. PMID 11801151 DOI: 10.1103/Physrevlett.88.046803 |
0.575 |
|
| 2002 |
Drabold DA, Li J. Electrons and phonons in amorphous Si: Deformation potentials and solutions of the time dependent schrödinger equation Materials Research Society Symposium - Proceedings. 715: 247-255. DOI: 10.1557/Proc-715-A14.1 |
0.43 |
|
| 2002 |
Drabold DA, Li J. Electrons and Phonons in amorphous Si: Deformation Potentials and Solutions of the Time Dependent Schrödinger Equation Mrs Proceedings. 715. DOI: 10.1557/PROC-715-A14.1 |
0.317 |
|
| 2002 |
Taraskin SN, Fry PA, Zhang X, Drabold DA, Elliott SR. Spatial decay of the single-particle density matrix in tight-binding metals: Analytic results in two dimensions Physical Review B - Condensed Matter and Materials Physics. 66: 2331011-2331014. DOI: 10.1103/Physrevb.66.233101 |
0.53 |
|
| 2002 |
Durandurdu M, Drabold DA. Pressure-induced structural phase transition of paracrystalline silicon Physical Review B - Condensed Matter and Materials Physics. 66: 2052041-2052046. DOI: 10.1103/Physrevb.66.205204 |
0.64 |
|
| 2002 |
Durandurdu M, Drabold DA. Ab initio simulation of pressure-induced low-energy excitations in amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 66: 1552051-1552055. DOI: 10.1103/Physrevb.66.155205 |
0.618 |
|
| 2002 |
Nakhmanson SM, Drabold DA, Mousseau N. Comment on ``Boson peak in amorphous silicon: A numerical study'' Physical Review B. 66: 87201. DOI: 10.1103/Physrevb.66.087201 |
0.756 |
|
| 2002 |
Durandurdu M, Drabold DA. Ab initio simulation of high-pressure phases of GaAs Physical Review B - Condensed Matter and Materials Physics. 66: 452091-452095. DOI: 10.1103/Physrevb.66.045209 |
0.612 |
|
| 2002 |
Durandurdu M, Drabold DA. First-order pressure-induced polyamorphism in germanium Physical Review B - Condensed Matter and Materials Physics. 66: 412011-412014. DOI: 10.1103/Physrevb.66.041201 |
0.619 |
|
| 2002 |
Durandurdu M, Drabold DA. Simulation of pressure-induced polyamorphism in a chalcogenide glass GeSe2 Physical Review B - Condensed Matter and Materials Physics. 65: 1042081-1042088. DOI: 10.1103/Physrevb.65.104208 |
0.619 |
|
| 2002 |
Chen K, Drabold DA. First principles molecular dynamics study of amorphous Al xGa 1-xN alloys Journal of Applied Physics. 91: 9743-9751. DOI: 10.1063/1.1478132 |
0.392 |
|
| 2002 |
Li J, Drabold DA. Atomistic simulation of the finite-temperature Anderson localization problem Physica Status Solidi (B) Basic Research. 233: 10-17. DOI: 10.1002/1521-3951(200209)233:1<10::Aid-Pssb10>3.0.Co;2-V |
0.395 |
|
| 2002 |
Nakhmanson SM, Drabold DA, Mousseau N. Comment on "Boson peak in amorphous silicon: A numerical study" Physical Review B - Condensed Matter and Materials Physics. 66: 872011-872012. |
0.745 |
|
| 2002 |
Taraskin SN, Drabold DA, Elliott SR. Spatial decay of the single-particle density matrix in insulators: Analytic results in two and three dimensions Physical Review Letters. 88: 1964051-1964054. |
0.304 |
|
| 2002 |
Li J, Drabold DA, Chen G, Jain H. Electronic structure of glassy chalcogenides As4Se4 and As2Se3: A joint theoretical and experimental study Physical Review Letters. 88: 468031-468034. |
0.378 |
|
| 2001 |
Nakhmanson SM, Mousseau N, Barkema GT, Voyles PM, Drabold DA. Models of paracrystalline silicon with a defect-free bandgap International Journal of Modern Physics B. 15: 3253-3257. DOI: 10.1142/S0217979201007580 |
0.777 |
|
| 2001 |
Zhang X, Drabold DA. Simulation of the response of amorphous selenium to light International Journal of Modern Physics B. 15: 3190-3196. DOI: 10.1142/S0217979201007476 |
0.429 |
|
| 2001 |
Yu M, Jayanthi CS, Drabold DA, Wu SY. Strain relaxation mechanisms and local structural changes in Si 1 − x Ge x alloys Physical Review B. 64: 165205. DOI: 10.1103/Physrevb.64.165205 |
0.398 |
|
| 2001 |
Demkov AA, Zhang X, Drabold DA. Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide-semiconductor structures Physical Review B - Condensed Matter and Materials Physics. 64: 1253061-1253064. DOI: 10.1103/Physrevb.64.125306 |
0.645 |
|
| 2001 |
Li J, Drabold DA. Atomistic comparison between stoichiometric and nonstoichiometric glasses: The cases ofAs2Se3andAs4Se4 Physical Review B. 64. DOI: 10.1103/PhysRevB.64.104206 |
0.23 |
|
| 2001 |
Durandurdu M, Drabold DA. Ab initio simulation of first-order amorphous-to-amorphous phase transition of silicon Physical Review B - Condensed Matter and Materials Physics. 64: 141011-141017. DOI: 10.1103/Physrevb.64.014101 |
0.657 |
|
| 2001 |
Nakhmanson SM, Voyles PM, Mousseau N, Barkema GT, Drabold DA. Realistic models of paracrystalline silicon Physical Review B - Condensed Matter and Materials Physics. 63: 2352071-2352076. DOI: 10.1103/Physrevb.63.235207 |
0.779 |
|
| 2001 |
Zhang X, Drabold DA. Properties of the density matrix from realistic calculations Physical Review B - Condensed Matter and Materials Physics. 63: 2331091-2331094. DOI: 10.1103/Physrevb.63.233109 |
0.467 |
|
| 2001 |
Voyles PM, Zotov N, Nakhmanson SM, Drabold DA, Gibson JM, Treacy MMJ, Keblinski P. Structure and physical properties of paracrystailine atomistic models of amorphous silicon Journal of Applied Physics. 90: 4437-4451. DOI: 10.1063/1.1407319 |
0.726 |
|
| 2001 |
Drabold D, Li J. Approximate ab initio simulations of amorphous silicon and glassy chalcogenides Current Opinion in Solid State and Materials Science. 5: 509-516. DOI: 10.1016/S1359-0286(02)00004-9 |
0.441 |
|
| 2001 |
Chen G, Jain H, Khalid S, Li J, Drabold DA, Elliott SR. Study of structural changes in amorphous As2Se3 by EXAFS under in situ laser irradiation Solid State Communications. 120: 149-153. DOI: 10.1016/S0038-1098(01)00354-4 |
0.641 |
|
| 2001 |
Yu M, Jayanthi CS, Drabold DA, Wu SY. Strain relaxation mechanisms and local structural changes in Si1-xGex alloys Physical Review B - Condensed Matter and Materials Physics. 64: 1652051-1652058. |
0.413 |
|
| 2001 |
Li J, Drabold DA. Atomistic comparison between stoichiometric and nonstoichiometric glasses: The cases of As2Se3 and As4Se4 Physical Review B - Condensed Matter and Materials Physics. 64: 1042061-1042068. |
0.373 |
|
| 2000 |
Zhang X, Drabold DA. Structural and electronic properties of glassy GeSe2 surfaces Physical Review B - Condensed Matter and Materials Physics. 62: 15695-15701. DOI: 10.1103/Physrevb.62.15695 |
0.453 |
|
| 2000 |
Durandurdu M, Drabold DA, Mousseau N. Approximate ab initio calculations of electronic structure of amorphous silicon Physical Review B - Condensed Matter and Materials Physics. 62: 15307-15310. DOI: 10.1103/Physrevb.62.15307 |
0.775 |
|
| 2000 |
Nakhmanson SM, Drabold DA. Low-temperature anomalous specific heat without tunneling modes: A simulation for a-Si with voids Physical Review B - Condensed Matter and Materials Physics. 61: 5376-5380. DOI: 10.1103/Physrevb.61.5376 |
0.673 |
|
| 2000 |
Yu M, Ulloa SE, Drabold DA. Local-basis quasiparticle calculations and the dielectric response function of Si clusters Physical Review B - Condensed Matter and Materials Physics. 61: 2626-2631. DOI: 10.1103/Physrevb.61.2626 |
0.59 |
|
| 2000 |
Li J, Drabold DA. First-principles molecular-dynamics study of glassy As 2 Se 3 Physical Review B. 61: 11998-12004. DOI: 10.1103/Physrevb.61.11998 |
0.4 |
|
| 2000 |
Chen H, Chen K, Drabold DA, Kordesch ME. Band gap engineering in amorphous AlxGa1-xN: Experiment and ab initio calculations Applied Physics Letters. 77: 1117-1119. DOI: 10.1063/1.1289496 |
0.386 |
|
| 2000 |
Drabold DA. Anderson transition and thermal effects on electron states in amorphous silicon Journal of Non-Crystalline Solids. 266: 211-217. DOI: 10.1016/S0022-3093(99)00823-6 |
0.447 |
|
| 2000 |
Nakhmanson SM, Drabold DA. Computer simulation of low-energy excitations in amorphous silicon with voids Journal of Non-Crystalline Solids. 266: 156-160. DOI: 10.1016/S0022-3093(99)00795-4 |
0.696 |
|
| 2000 |
Mousseau N, Drabold DA. Numerical studies of the vibrational isocoordinate rule in chalcogenide glasses European Physical Journal B. 17: 667-671. DOI: 10.1007/S100510070106 |
0.578 |
|
| 2000 |
Li J, Drabold DA. First-principles molecular-dynamics study of glassy As2Se3 Physical Review B - Condensed Matter and Materials Physics. 61: 11998-12004. |
0.344 |
|
| 2000 |
Li J, Drabold DA. Direct calculation of light-induced structural change and diffusive motion in glassy As2Se3 Physical Review Letters. 85: 2785-2788. |
0.388 |
|
| 1999 |
Drabold DA, Stephan U, Dong J, Nakhmanson SM. The structure of electronic states in amorphous silicon. Journal of Molecular Graphics & Modelling. 17: 285-91, 330-2. PMID 10840688 DOI: 10.1016/S1093-3263(99)00036-4 |
0.825 |
|
| 1999 |
Fedders PA, Drabold DA. A molecular dynamics study of band tails in a-Si:H Materials Research Society Symposium - Proceedings. 557: 403-408. DOI: 10.1557/Proc-557-403 |
0.714 |
|
| 1999 |
Zhang X, Drabold DA. Direct Molecular Dynamic Simulation of Light-Induced Structural Change in Amorphous Selenium Physical Review Letters. 83: 5042-5045. DOI: 10.1103/Physrevlett.83.5042 |
0.511 |
|
| 1999 |
Drabold DA, Fedders PA. Electronic consequences of the mutual presence of thermal and structural disorder Physical Review B - Condensed Matter and Materials Physics. 60: R721-R725. DOI: 10.1103/Physrevb.60.R721 |
0.696 |
|
| 1999 |
Fabricius G, Artacho E, Sánchez-Portal D, Ordejón P, Drabold DA, Soler JM. Atomic layering at the liquid silicon surface: A first-principles simulation Physical Review B - Condensed Matter and Materials Physics. 60: R16283-R16286. DOI: 10.1103/Physrevb.60.R16283 |
0.393 |
|
| 1999 |
Fedders PA, Drabold DA, Ordejón P, Fabricius G, Sánchez-Portal D, Artacho E, Soler JM. Application of local-spin-density approximation to a-Si and tetrahedral a-C Physical Review B - Condensed Matter and Materials Physics. 60: 10594-10597. DOI: 10.1103/Physrevb.60.10594 |
0.698 |
|
| 1998 |
Dong J, Drabold DA. Atomistic structure of band-tail states in amorphous silicon Physical Review Letters. 80: 1928-1931. DOI: 10.1103/Physrevlett.80.1928 |
0.732 |
|
| 1998 |
Fedders PA, Drabold DA, Nakhmanson S. Theoretical study on the nature of band-tail states in amorphous Si Physical Review B - Condensed Matter and Materials Physics. 58: 15624-15631. DOI: 10.1103/Physrevb.58.15624 |
0.819 |
|
| 1998 |
Nakhmanson SM, Drabold DA. Approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon with inner voids Physical Review B - Condensed Matter and Materials Physics. 58: 15325-15328. DOI: 10.1103/Physrevb.58.15325 |
0.724 |
|
| 1998 |
Stephan U, Drabold DA, Martin RM. Improved accuracy and acceleration of variational order-N electronic-structure computations by projection techniques Physical Review B - Condensed Matter and Materials Physics. 58: 13472-13481. DOI: 10.1103/Physrevb.58.13472 |
0.474 |
|
| 1998 |
Stephan U, Drabold DA. Order-N projection method for first-principles computations of electronic quantities and Wannier functions Physical Review B - Condensed Matter and Materials Physics. 57: 6391-6407. DOI: 10.1103/Physrevb.57.6391 |
0.371 |
|
| 1998 |
Dong J, Drabold DA. Ring formation and the structural and electronic properties of tetrahedral amorphous carbon surfaces Physical Review B - Condensed Matter and Materials Physics. 57: 15591-15598. DOI: 10.1103/Physrevb.57.15591 |
0.688 |
|
| 1998 |
Yu M, Drabold DA. Density dependence of the structural and electronic properties of amorphous GaN Solid State Communications. 108: 413-417. DOI: 10.1016/S0038-1098(98)00401-3 |
0.439 |
|
| 1998 |
Zhang X, Drabold DA. Evidence for valence alternation, and a new structural model of amorphous selenium Journal of Non-Crystalline Solids. 241: 195-199. DOI: 10.1016/S0022-3093(98)00807-2 |
0.517 |
|
| 1998 |
Fedders PA, Drabold DA, Stumm P. Theoretical studies of defects and nitrogen doping in tetrahedral amorphous carbon Journal of Non-Crystalline Solids. 588-593. DOI: 10.1016/S0022-3093(98)00145-8 |
0.816 |
|
| 1998 |
Fedders PA, Drabold DA. Simulations of boron doping in a-Si:H Journal of Non-Crystalline Solids. 227: 376-379. DOI: 10.1016/S0022-3093(98)00078-7 |
0.687 |
|
| 1998 |
Drabold DA, Dong J. Band tail states and the Anderson transition in amorphous silicon Journal of Non-Crystalline Solids. 227: 153-157. DOI: 10.1016/S0022-3093(98)00030-1 |
0.394 |
|
| 1998 |
Feeders PA, Drabold DA, Stumm P. Theoretical studies of defects and nitrogen doping in tetrahedral amorphous carbon Journal of Non-Crystalline Solids. 227: 588-593. |
0.305 |
|
| 1997 |
Stumm P, Drabold DA. Structure, electronic properties, defects, and doping of AlN using a self-consistent molecular-dynamics method Materials Research Society Symposium - Proceedings. 468: 111-116. DOI: 10.1557/Proc-468-111 |
0.822 |
|
| 1997 |
Fedders PA, Drabold DA. Molecular dynamics investigations of boron doping in a-Si:H Materials Research Society Symposium - Proceedings. 467: 67-72. DOI: 10.1557/Proc-467-67 |
0.705 |
|
| 1997 |
Drabold DA, Stumm P. First model of amorphous GaN from ab initio molecular dynamics Materials Research Society Symposium - Proceedings. 449: 947-952. DOI: 10.1557/Proc-449-947 |
0.834 |
|
| 1997 |
Stumm P, Drabold DA. Structure, electronic properties, defects of GaN using a self-consistent molecular-dynamics method Materials Research Society Symposium - Proceedings. 449: 941-946. DOI: 10.1557/Proc-449-941 |
0.823 |
|
| 1997 |
Noguez C, Esquivel-Sirvent R, Alfonso DR, Ulloa SE, Drabold DA. Optical signature of the GaN (1010) surface Materials Research Society Symposium - Proceedings. 449: 911-916. DOI: 10.1557/Proc-449-911 |
0.58 |
|
| 1997 |
Stumm P, Drabold DA. Can amorphous GaN serve as a useful electronic material? Physical Review Letters. 79: 677-680. DOI: 10.1103/Physrevlett.79.677 |
0.835 |
|
| 1997 |
Cobb M, Drabold DA. Ab initio molecular-dynamics study of liquid GeSe2 Physical Review B - Condensed Matter and Materials Physics. 56: 3054-3065. DOI: 10.1103/Physrevb.56.3054 |
0.513 |
|
| 1997 |
Fedders PA, Drabold DA. Theory of boron doping in a-Si:H Physical Review B - Condensed Matter and Materials Physics. 56: 1864-1867. DOI: 10.1103/Physrevb.56.1864 |
0.701 |
|
| 1997 |
Röder H, Silver RN, Drabold DA, Dong JJ. Kernel polynomial method for a nonorthogonal electronic-structure calculation of amorphous diamond Physical Review B - Condensed Matter and Materials Physics. 55: 15382-15385. DOI: 10.1103/Physrevb.55.15382 |
0.416 |
|
| 1997 |
Yang SH, Drabold DA, Adams JB, Ordejón P, Glassford K. Density functional studies of small platinum clusters Journal of Physics Condensed Matter. 9: L39-L45. DOI: 10.1088/0953-8984/9/5/002 |
0.79 |
|
| 1997 |
Stumm P, Drabold DA, Fedders PA. Defects, doping, and conduction mechanisms in nitrogen-doped tetrahedral amorphous carbon Journal of Applied Physics. 81: 1289-1295. DOI: 10.1063/1.363907 |
0.801 |
|
| 1997 |
Cobb M, Cappelletti RL, Drabold DA. Structure, dynamics and electronic properties of liquid and glassy GeSe2 Journal of Non-Crystalline Solids. 222: 348-353. DOI: 10.1016/S0022-3093(97)90135-6 |
0.486 |
|
| 1996 |
Drabold DA, Fedders PA, Grumbach MP. Gap formation and defect states in tetrahedral amorphous carbon. Physical Review. B, Condensed Matter. 54: 5480-5484. PMID 9986508 DOI: 10.1103/Physrevb.54.5480 |
0.703 |
|
| 1996 |
Cobb M, Drabold DA, Cappelletti RL. Ab initio molecular-dynamics study of the structural, vibrational, and electronic properties of glassy GeSe2. Physical Review. B, Condensed Matter. 54: 12162-12171. PMID 9985075 DOI: 10.1103/Physrevb.54.12162 |
0.82 |
|
| 1996 |
Fedders PA, Drabold DA. Molecular-dynamics investigations of conformational fluctuations and low-energy vibrational excitations in a-Si:H. Physical Review. B, Condensed Matter. 53: 3841-3845. PMID 9983936 DOI: 10.1103/Physrevb.53.3841 |
0.737 |
|
| 1996 |
Song J, Ulloa SE, Drabold DA. Exciton-induced lattice relaxation and the electronic and vibrational spectra of silicon clusters. Physical Review. B, Condensed Matter. 53: 8042-8051. PMID 9982262 DOI: 10.1103/Physrevb.53.8042 |
0.65 |
|
| 1996 |
Dong J, Drabold DA. Band-tail states and the localized-to-extended transition in amorphous diamond Physical Review B - Condensed Matter and Materials Physics. 54: 10284-10287. DOI: 10.1103/Physrevb.54.10284 |
0.7 |
|
| 1996 |
Alfonso D, Drabold D, Ulloa S. Structure of diamond(100) stepped surfaces from ab initio calculations Journal of Physics Condensed Matter. 8: 641-647. DOI: 10.1088/0953-8984/8/6/005 |
0.807 |
|
| 1996 |
Noguez C, Song J, Ulloa SE, Drabold DA, Yang SH. Size dependence of the optical properties of silicon clusters Superlattices and Microstructures. 20: 405-410. DOI: 10.1006/Spmi.1996.0096 |
0.788 |
|
| 1996 |
Feeders PA, Drabold DA. Molecular-dynamics investigations of conformational fluctuations and low-energy vibrational excitations in a-Si:H Physical Review B - Condensed Matter and Materials Physics. 53: 3841-3845. |
0.426 |
|
| 1996 |
Itoh S, Ordejón P, Drabold DA, Martin RM. Structure and energetics of giant fullerenes: An order-N molecular-dynamics study Physical Review B - Condensed Matter and Materials Physics. 53: 2132-2140. |
0.309 |
|
| 1996 |
Cobb M, Drabold DA, Cappelletti RL. Ab initio molecular-dynamics study of the structural, vibrational, and electronic properties of glassy GeSe2 Physical Review B - Condensed Matter and Materials Physics. 54: 12162-12171. |
0.442 |
|
| 1996 |
Alfonso DR, Noguez C, Drabold DA, Ulloa SE. First-principles studies of hydrogenated Si(111)-7×7 Physical Review B - Condensed Matter and Materials Physics. 54: 8028-8032. |
0.558 |
|
| 1996 |
Song J, Ulloa SE, Drabold DA. Exciton-induced lattice relaxation and the electronic and vibrational spectra of silicon clusters Physical Review B - Condensed Matter and Materials Physics. 53: 8042-8051. |
0.612 |
|
| 1995 |
Cappelletti RL, Cobb M, Drabold DA, Kamitakahara WA. Neutron-scattering and ab initio molecular-dynamics study of vibrations in glassy GeSe2. Physical Review. B, Condensed Matter. 52: 9133-9136. PMID 9979942 DOI: 10.1103/Physrevb.52.9133 |
0.775 |
|
| 1995 |
Alfonso DR, Drabold DA, Ulloa SE. Phonon modes of diamond (100) surfaces from ab initio calculations. Physical Review. B, Condensed Matter. 51: 1989-1992. PMID 9978934 DOI: 10.1103/Physrevb.51.1989 |
0.559 |
|
| 1995 |
Alfonso DR, Drabold DA, Ulloa SE. Structural, electronic, and vibrational properties of diamond (100), (111), and (110) surfaces from ab initio calculations. Physical Review. B, Condensed Matter. 51: 14669-14685. PMID 9978402 DOI: 10.1103/Physrevb.51.14669 |
0.624 |
|
| 1995 |
Ordejón P, Drabold DA, Martin RM, Itoh S. Linear scaling method for phonon calculations from electronic structure Physical Review Letters. 75: 1324-1327. DOI: 10.1103/Physrevlett.75.1324 |
0.595 |
|
| 1995 |
Cappelletti RL, Cobb M, Drabold DA, Kamitakahara WA. Neutron-scattering and ab initio molecular-dynamics study of vibrations in glassy GeSe2 Physical Review B. 52: 9133-9136. DOI: 10.1103/PhysRevB.52.9133 |
0.398 |
|
| 1995 |
Ordejón P, Drabold DA, Martin RM, Grumbach MP. Linear system-size scaling methods for electronic-structure calculations Physical Review B. 51: 1456-1476. DOI: 10.1103/Physrevb.51.1456 |
0.597 |
|
| 1995 |
Wang J, Drabold DA, Rockett A. Binding and diffusion of a Si adatom around the type a step on Si(001) c(4×2) Applied Physics Letters. 1954. DOI: 10.1063/1.113288 |
0.418 |
|
| 1995 |
Wang J, Drabold DA, Rockett A. Binding and diffusion of a Si adatom around type B steps on Si(001) c(4 × 2) Surface Science. 344: 251-257. DOI: 10.1016/0039-6028(95)00806-3 |
0.417 |
|
| 1995 |
Drabold DA, Ordejón P, Dong J, Martin RM. Spectral properties of large fullerenes: From cluster to crystal Solid State Communications. 96: 833-838. DOI: 10.1016/0038-1098(95)00562-5 |
0.561 |
|
| 1995 |
Stumm P, Drabold DA. Structural and electronic properties of nitrogen doped fourfold amorphous carbon Solid State Communications. 93: 617-621. DOI: 10.1016/0038-1098(94)00650-2 |
0.814 |
|
| 1994 |
Drabold DA, Stumm P, Fedders PA. Comment on "Structure, dynamics, and electronic properties of diamondlike amorphous carbon" Physical Review Letters. 72: 2666. PMID 10055943 DOI: 10.1103/Physrevlett.72.2666 |
0.801 |
|
| 1994 |
Drabold DA, Fedders PA, Stumm P. Theory of diamondlike amorphous carbon. Physical Review. B, Condensed Matter. 49: 16415-16422. PMID 10010793 DOI: 10.1103/Physrevb.49.16415 |
0.762 |
|
| 1994 |
Alfonso DR, Yang SH, Drabold DA. Ab initio studies of hydrocarbon adsorption on stepped diamond surfaces. Physical Review. B, Condensed Matter. 50: 15369-15380. PMID 9975889 DOI: 10.1103/Physrevb.50.15369 |
0.714 |
|
| 1994 |
Fedders PA, Drabold DA. Molecular dynamics studies of diamondlike amorphous carbon Materials Research Society Symposium Proceedings. 336: 171-176. DOI: 10.1557/Proc-336-171 |
0.677 |
|
| 1994 |
Ramprasad R, Drabold DA, Adams JB. Density-functional study of chemisorption of oxygen on Al(111) Materials Research Society Symposium Proceedings. 317: 381-386. DOI: 10.1557/Proc-317-381 |
0.563 |
|
| 1994 |
Sankey OF, Drabold DA, Gibson A. Projected random vectors and the recursion method in the electronic-structure problem Physical Review B. 50: 1376-1381. DOI: 10.1103/Physrevb.50.1376 |
0.676 |
|
| 1994 |
Caro A, Drabold DA, Sankey OF. Properties of the Al-Si solid solution: Dynamical properties of the silicon substitutional and the aluminum vacancy Physical Review B. 49: 6647-6654. DOI: 10.1103/Physrevb.49.6647 |
0.721 |
|
| 1993 |
Fedders PA, Drabold DA. Hydrogen and defects in first-principles molecular-dynamics-modeled a-Si:H. Physical Review. B, Condensed Matter. 47: 13277-13282. PMID 10005632 DOI: 10.1103/Physrevb.47.13277 |
0.734 |
|
| 1993 |
Drabold DA, Sankey OF. Maximum entropy approach for linear scaling in the electronic structure problem Physical Review Letters. 70: 3631-3634. DOI: 10.1103/Physrevlett.70.3631 |
0.712 |
|
| 1993 |
Yang SH, Drabold DA, Adams JB. Ab initio study of diamond C(100) surfaces Physical Review B. 48: 5261-5264. DOI: 10.1103/Physrevb.48.5261 |
0.78 |
|
| 1993 |
Kilian KA, Drabold DA, Adams JB. First-principles simulations of a-Si and a-Si:H surfaces Physical Review B. 48: 17393-17399. DOI: 10.1103/Physrevb.48.17393 |
0.634 |
|
| 1993 |
Ordejon P, Drabold DA, Grumbach MP, Martin RM. Unconstrained minimization approach for electronic computations that scales linearly with system size Physical Review B. 48: 14646-14649. DOI: 10.1103/Physrevb.48.14646 |
0.569 |
|
| 1993 |
Yang SH, Drabold DA, Adams JB, Sachdev A. First-principles local-orbital density-functional study of Al clusters Physical Review B. 47: 1567-1576. DOI: 10.1103/Physrevb.47.1567 |
0.794 |
|
| 1993 |
Drabold DA, Adams JB, Anderson DC, Kieffer J. First principles study of polymer-metal-metal-oxide adhesion The Journal of Adhesion. 42: 55-63. DOI: 10.1080/00218469308026570 |
0.264 |
|
| 1992 |
Adams GB, Sankey OF, Page JB, O'keeffe M, Drabold DA. Energetics of large fullerenes: balls, tubes, and capsules. Science (New York, N.Y.). 256: 1792-5. PMID 17743034 DOI: 10.1126/Science.256.5065.1792 |
0.684 |
|
| 1992 |
Fedders PA, Fu Y, Drabold DA. Atomistic origins of light-induced defects in a-Si. Physical Review Letters. 68: 1888-1891. PMID 10045246 DOI: 10.1103/PhysRevLett.68.1888 |
0.663 |
|
| 1992 |
Fedders PA, Drabold DA, Klemm S. Defects, tight binding, and first-principles molecular-dynamics simulations on a-Si. Physical Review. B, Condensed Matter. 45: 4048-4055. PMID 10002017 DOI: 10.1103/Physrevb.45.4048 |
0.707 |
|
| 1992 |
Drabold DA, Fedders PA, Klemm S, Sankey OF. Defects and Bandtails in Amorphous Silicon Materials Science Forum. 481-486. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.481 |
0.785 |
|
| 1992 |
Fedders PA, Fu Y, Drabold DA. The Atomistic and Quantum Mechanical Origins of Light-Induced Defects in a-Si Mrs Proceedings. 258. DOI: 10.1557/Proc-258-335 |
0.712 |
|
| 1992 |
Drabold DA, Fedders PA. Realistic Models of Hydrogenated Amorphous Si Mrs Proceedings. 258. DOI: 10.1557/Proc-258-253 |
0.739 |
|
| 1992 |
Phillips R, Drabold DA, Lenosky T, Adams GB, Sankey OF. Electronic structure of schwarzite Physical Review B. 46: 1941-1943. DOI: 10.1103/Physrevb.46.1941 |
0.712 |
|
| 1992 |
Adams GB, Sankey OF, Page JB, O'Keeffe M, Drabold DA. Energetics of large fullerenes: Balls, tubes, and capsules Science. 256: 1792-1795. |
0.659 |
|
| 1991 |
Drabold DA, Fedders PA, Klemm S, Sankey OF. Finite-temperature properties of amorphous silicon. Physical Review Letters. 67: 2179-2182. PMID 10044359 DOI: 10.1103/Physrevlett.67.2179 |
0.81 |
|
| 1991 |
Drabold DA, Wang R, Klemm S, Sankey OF, Dow JD. Efficient ab initio molecular-dynamics simulations of carbon. Physical Review. B, Condensed Matter. 43: 5132-5134. PMID 9997891 DOI: 10.1103/Physrevb.43.5132 |
0.664 |
|
| 1991 |
Drabold DA, Wang R, Klemm S, Sankey OF, Dow JD. Efficient ab initio molecular-dynamics simulations of carbon Physical Review B. 43: 5132-5134. DOI: 10.1103/PhysRevB.43.5132 |
0.676 |
|
| 1991 |
Drabold DA, Jones GL. Maximum-entropy approach to series extrapolation and analytic continuation Journal of Physics a: Mathematical and General. 24: 4705-4714. DOI: 10.1088/0305-4470/24/19/029 |
0.372 |
|
| 1991 |
Sankey OF, Adams GB, Weng X, Dow JD, Huang YM, Spence JCH, Drabold DA, Hu WM, Wang RP, Klemm S, Fedders PA. First-principles electronic structure calculations with molecular dynamics made easy Superlattices and Microstructures. 10: 407-414. DOI: 10.1016/0749-6036(91)90300-G |
0.813 |
|
| 1990 |
Drabold DA, Dow JD, Fedders PA, Carlsson AE, Sankey OF. Convergence of force calculations for noncrystalline Si. Physical Review. B, Condensed Matter. 42: 5345-5348. PMID 9996105 DOI: 10.1103/Physrevb.42.5345 |
0.785 |
|
| 1990 |
Drabold DA, Fedders PA, Sankey OF, Dow JD. Molecular-dynamics simulations of amorphous Si. Physical Review. B, Condensed Matter. 42: 5135-5141. PMID 9996075 DOI: 10.1103/Physrevb.42.5135 |
0.822 |
|
| 1990 |
Sankey OF, Niklewski DJ, Drabold DA, Dow JD. Molecular-dynamics determination of electronic and vibrational spectra, and equilibrium structures of small Si clusters. Physical Review. B, Condensed Matter. 41: 12750-12759. PMID 9993752 DOI: 10.1103/Physrevb.41.12750 |
0.677 |
|
| 1990 |
Klemm S, Drabold DA, Sankey OF. Ab-Initio Simulations to Study the Configurational Entropy of Column IV Microclusters Mrs Proceedings. 193. DOI: 10.1557/Proc-193-307 |
0.695 |
|
| 1990 |
Drabold DA, Klemm S, Sankey OF. Ab Initio Molecular Dynamics of Column IV Microclusters Mrs Proceedings. 193. DOI: 10.1557/Proc-193-177 |
0.716 |
|
| 1990 |
Sankey OF, Niklewski DJ, Drabold DA, Dow JD. Molecular-dynamics determination of electronic and vibrational spectra, and equilibrium structures of small Si clusters Physical Review B. 41: 12750-12759. DOI: 10.1103/PhysRevB.41.12750 |
0.723 |
|
| 1989 |
Drabold DA, Fedders PA. Nuclear spin-lattice relaxation times for mixtures of ortho- and para-H2: High ortho-H2 concentration. Physical Review. B, Condensed Matter. 39: 1993-1998. PMID 9948430 DOI: 10.1103/PhysRevB.39.1993 |
0.619 |
|
| 1989 |
Drabold DA, Fedders PA. Nuclear spin-lattice relaxation times for mixtures of ortho- and para-H2. II. Low ortho-H2 concentration. Physical Review. B, Condensed Matter. 39: 6325-6333. PMID 9947266 DOI: 10.1103/PhysRevB.39.6325 |
0.618 |
|
| 1988 |
Drabold DA, Fedders PA. Dipolar broadening in magnetically diluted lattices. Physical Review. B, Condensed Matter. 37: 3440-3447. PMID 9944938 DOI: 10.1103/Physrevb.37.3440 |
0.64 |
|
| 1988 |
Drabold DA. Easily evaluated expressions for second and fourth moments of resonant absorption spectra for spin systems Physical Review B. 37: 565-568. DOI: 10.1103/PhysRevB.37.565 |
0.287 |
|
| 1983 |
Creel R, Drabold D. Exact analytic solution of the spin combined Zeeman-quadrupole Hamiltonian Journal of Molecular Structure. 111: 85-90. DOI: 10.1016/0022-2860(83)85101-1 |
0.19 |
|
| Show low-probability matches. |
