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Xinming Huang, Ph.D. - Publications

Affiliations: 
2001 Virginia Polytechnic Institute and State University, Blacksburg, VA, United States 
Area:
Electronics and Electrical Engineering, Mechanical Engineering
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37 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Hoshikawa T, Huang X, Hoshikawa K, Uda S. Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve Japanese Journal of Applied Physics. 47: 8691-8695. DOI: 10.1143/Jjap.47.8691  0.304
2008 Arivanandhan M, Huang X, Uda S, Bhagavannarayana G, Vijayan N, Sankaranarayanan K, Ramasamy P. Directional growth of organic NLO crystal by different growth methods: A comparative study by means of XRD, HRXRD and laser damage threshold Journal of Crystal Growth. 310: 4587-4592. DOI: 10.1016/J.Jcrysgro.2008.08.036  0.314
2008 Kimura H, Uda S, Buzanov O, Huang X, Koh S. The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method Journal of Electroceramics. 20: 73-80. DOI: 10.1007/S10832-007-9349-2  0.306
2007 Huang X, Baumann WT. Reduced-order modeling of dynamic heat release for thermoacoustic instability prediction Combustion Science and Technology. 179: 617-636. DOI: 10.1080/00102200600969979  0.572
2007 Huang X, Uda S, Tanabe H, Kitahara N, Arimune H, Hoshikawa K. In situ observations of crystal growth of spherical Si single crystals Journal of Crystal Growth. 307: 341-347. DOI: 10.1016/J.Jcrysgro.2007.07.005  0.368
2007 Hoshikawa T, Taishi T, Huang X, Uda S, Yamatani M, Shirasawa K, Hoshikawa K. Si multicrystals grown by the Czochralski method with multi-seeds Journal of Crystal Growth. 307: 466-471. DOI: 10.1016/J.Jcrysgro.2007.06.032  0.31
2007 Taishi T, Hoshikawa T, Yamatani M, Shirasawa K, Huang X, Uda S, Hoshikawa K. Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime Journal of Crystal Growth. 306: 452-457. DOI: 10.1016/J.Jcrysgro.2007.05.042  0.333
2007 Huang X, Hoshikawa T, Uda S. Analysis of the reaction at the interface between Si melt and Ba-doped silica glass Journal of Crystal Growth. 306: 422-427. DOI: 10.1016/J.Jcrysgro.2007.05.020  0.351
2006 Huang X, Wu K, Chen M, Toshinori T, Hoshikawa K, Koh S, Uda S. Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping Materials Science in Semiconductor Processing. 9: 257-260. DOI: 10.1016/J.Mssp.2006.01.050  0.316
2006 Koh S, Uda S, Nishida M, Huang X. Study of the mechanism of crystallization electromotive force during growth of congruent LiNbO3 using a micro-pulling-down method Journal of Crystal Growth. 297: 247-258. DOI: 10.1016/J.Jcrysgro.2006.09.041  0.307
2006 Hoshikawa T, Huang X, Uda S, Taishi T. Segregation of Ga during growth of Si single crystal Journal of Crystal Growth. 290: 338-340. DOI: 10.1016/J.Jcrysgro.2006.01.026  0.305
2005 Huang X, Taishi T, Hoshikawa K. Dislocation-free CZ-Si crystal growth without the thin Dash-neck International Journal of Materials & Product Technology. 22: 64. DOI: 10.1504/Ijmpt.2005.005748  0.352
2005 Huang X, Koh S, Wu K, Chen M, Hoshikawa T, Hoshikawa K, Uda S. Reaction at the interface between Si melt and a Ba-doped silica crucible Journal of Crystal Growth. 277: 154-161. DOI: 10.1016/J.Jcrysgro.2005.01.101  0.341
2005 Taishi T, Huang X, Yonenaga I, Hoshikawa K. Behavior of the edge dislocation propagating along the growth direction in Czochralski Si crystal growth Journal of Crystal Growth. 275. DOI: 10.1016/J.Jcrysgro.2004.11.287  0.354
2005 Uda S, Huang X, Wang S. The effect of an external electric field on the growth of incongruent-melting material Journal of Crystal Growth. 275. DOI: 10.1016/J.Jcrysgro.2004.11.184  0.304
2005 Yonenaga I, Taishi T, Huang X, Hoshikawa K. Dislocation-impurity interaction in Czochralski-grown Si heavily doped with B and Ge Journal of Crystal Growth. 275. DOI: 10.1016/J.Jcrysgro.2004.11.077  0.344
2005 Huang X, Sato T, Nakanishi M, Taishi T, Hoshikawa K, Uda S. Robust Si wafer Journal of Crystal Growth. 275: 401-407. DOI: 10.1016/J.Jcrysgro.2004.11.010  0.315
2005 Hoshikawa K, Huang X, Taishi T. Heavily doped silicon crystals: neckless growth and robust wafers Journal of Crystal Growth. 275: 276-282. DOI: 10.1016/J.Jcrysgro.2004.10.161  0.365
2003 Huang X, Sato T, Nakanishi M, Taishi T, Hoshikawa K. High Strength Si Wafers with Heavy B and Ge Codoping Japanese Journal of Applied Physics. 42: 1489. DOI: 10.1143/Jjap.42.L1489  0.302
2000 Taishi T, Huang X, Kubota M, Kajigaya T, Fukami T, Hoshikawa K. Heavily Boron-Doped Silicon Single Crystal Growth: Constitutional Supercooling Japanese Journal of Applied Physics. 39: 5. DOI: 10.1143/Jjap.39.L5  0.327
2000 Huang X, Taishi T, Yonenaga I, Hoshikawa K. Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed Japanese Journal of Applied Physics. 39. DOI: 10.1143/Jjap.39.L1115  0.348
1999 Taishi T, Huang X, Kubota M, Kajigaya T, Fukami T, Hoshikawa K. Heavily Boron-Doped Silicon Single Crystal Growth: Boron Segregation Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L223  0.352
1999 Huang X, Terashima K, Hoshikawa K. SiO Vapor Pressure in an SiO2 Glass/Si Melt/SiO Gas Equilibrium System. Japanese Journal of Applied Physics. 38. DOI: 10.1143/Jjap.38.L1153  0.321
1998 Huang X, Saitou K, Sakai S, Terashima K, Hoshikawa K. Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method Japanese Journal of Applied Physics. 37. DOI: 10.1143/Jjap.37.L193  0.32
1998 Huang X, Nakazawa T, Terashima K, Hoshikawa K. Silicon Crystal Growth under Equilibrium Condition of SiO2-Si–SiO System: Equilibrium Oxygen Segregation Coefficient Japanese Journal of Applied Physics. 37. DOI: 10.1143/Jjap.37.L1504  0.33
1995 Izunome K, Huang X, Togawa S, Terashima K, Kimura S. Control of Oxygen Content in Heavily Sb-Doped CZ Si Crystal by Adjusting Ambient Pressure Mrs Proceedings. 378: 53. DOI: 10.1557/Proc-378-53  0.339
1995 Izunome K, Huang X, Terashima K, Kimura S. Evaluation of evaporated species from silicon melt surface during Sb-doped Czochralski silicon crystal growth Japanese Journal of Applied Physics. 34. DOI: 10.1143/Jjap.34.L1635  0.335
1995 Huang X, Terashima K, Izunome K, Kimura S. Chemical Reaction of Sb Atoms in Si Melt. Japanese Journal of Applied Physics. 34: 1502-1503. DOI: 10.1143/Jjap.34.1502  0.333
1995 Izunome K, Huang X, Togawa S, Terashima K, Kimura S. Control of oxygen concentration in heavily antimony-doped Czochralski Si crystals by ambient argon pressure Journal of Crystal Growth. 151: 291-294. DOI: 10.1016/0022-0248(95)00097-6  0.327
1995 Huang X, Terashima K, Izunome K, Kimura S. Effect of antimony-doping on the oxygen segregation coefficient in silicon crystal growth Journal of Crystal Growth. 149: 59-63. DOI: 10.1016/0022-0248(94)01013-7  0.348
1995 Togawa S, Huang X, Izunome K, Terashima K, Kimura S. Oxygen transport analysis in Czochralski silicon melt by considering the oxygen evaporation from the melt surface Journal of Crystal Growth. 148: 70-78. DOI: 10.1016/0022-0248(94)00655-5  0.303
1994 Huang X, Terashima K, Izunome K, Kimura S. Relationship between Different Interfacial Phases and Oxygen Solubility in Silicon Melt Japanese Journal of Applied Physics. 33. DOI: 10.1143/Jjap.33.L820  0.324
1994 Huang X, Terashima K, Tokizaki E, Whitby SK. Evaporation Rates of Oxides from Undoped and Sb-Doped Si Melts under Atmospheres of Pure Ne, Ar, and Kr Japanese Journal of Applied Physics. 33: 3808. DOI: 10.1143/Jjap.33.3808  0.315
1994 Huang X, Terashima K, Tokizaki E, Sasaki H, Kimura S. Analysis of Deposits Evaporated from Sb-Doped Si Melts Japanese Journal of Applied Physics. 33: 3305-3309. DOI: 10.1143/Jjap.33.3305  0.314
1994 Huang X, Terashima K, Sasaki H, Tokizaki E, Anzai Y, Kimura S. Evaporation of Oxygen-Bearing Species from Si Melt and Influence of Sb Addition Japanese Journal of Applied Physics. 33: 1717-1722. DOI: 10.1143/Jjap.33.1717  0.352
1994 Huang X, Terashima K, Anzai Y, Tokizaki E, Sasaki H, Kimura S. Formation of interfacial phases between silica and undoped or antimony‐doped silicon melts Applied Physics Letters. 64: 2261-2263. DOI: 10.1063/1.111638  0.302
1993 Huang X, Terashima K, Sasaki H, Tokizaki E, Kimura S. Oxygen Solubilities in Si Melt: Influence of Sb Addition Japanese Journal of Applied Physics. 32: 3671-3674. DOI: 10.1143/Jjap.32.3671  0.314
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