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Hoon Ryu, Ph.D. - Publications

Affiliations: 
2011 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Quantum Physics
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33 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Ryu H, Kang JH. Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls. Scientific Reports. 12: 15200. PMID 36071130 DOI: 10.1038/s41598-022-19404-0  0.314
2020 Kang JH, Ryu J, Ryu H. Exploring the behaviors of electrode-driven Si quantum dot systems: from charge control to qubit operations. Nanoscale. PMID 33346301 DOI: 10.1039/d0nr05070a  0.357
2019 Kim I, Kim HS, Ryu H. Piezoresistivity of InAsP Nanowires: Role of Crystal Phases and Phosphorus Atoms in Strain-Induced Channel Conductances. Molecules (Basel, Switzerland). 24. PMID 31489942 DOI: 10.3390/Molecules24183249  0.354
2019 Ryu H, Hong S, Kim HS, Hong KH. Role of Quantum Confinement in 10 nm Scale Perovskite Optoelectronics. The Journal of Physical Chemistry Letters. 2745-2752. PMID 31082242 DOI: 10.1021/Acs.Jpclett.9B00645  0.431
2018 Ryu H, Kwon O. Fast, energy-efficient electronic structure simulations for multi-million atomic systems with GPU devices Journal of Computational Electronics. 17: 698-706. DOI: 10.1007/S10825-018-1138-4  0.461
2018 Choi S, Kim WY, Yeom MS, Ryu H. On the achievement of high fidelity and scalability for large-scale diagonalizations in grid-based DFT simulations International Journal of Quantum Chemistry. 118: e25622. DOI: 10.1002/Qua.25622  0.349
2016 Ryu H. A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs. Nanoscale Research Letters. 11: 36. PMID 26815605 DOI: 10.1186/S11671-016-1249-4  0.322
2016 Ryu H, Jeong Y, Kang J, Cho KN. Time-efficient simulations of tight-binding electronic structures with Intel Xeon PhiTM many-core processors Computer Physics Communications. 209: 79-87. DOI: 10.1016/J.Cpc.2016.08.015  0.463
2015 Ryu H, Kim J, Hong KH. Atomistic study on dopant-distributions in realistically sized, highly P-doped Si nanowires. Nano Letters. 15: 450-6. PMID 25555203 DOI: 10.1021/Nl503770Z  0.355
2015 Ryu H, Lee S, Fuechsle M, Miwa JA, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G. A tight-binding study of single-atom transistors. Small (Weinheim An Der Bergstrasse, Germany). 11: 374-81. PMID 25293353 DOI: 10.1002/Smll.201400724  0.628
2015 Tan YHM, Ryu H, Weber B, Lee S, Rahman R, Hollenberg LCL, Simmons MY, Klimeck G. Statistical modeling of ultra-scaled donor-based silicon phosphorus devices 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348589  0.698
2015 Weber B, Tan YHM, Mahapatra S, Watson TF, Ryu H, Lee S, Rahman R, Hollenberg LCL, Klimeck G, Simmons MY. Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348550  0.714
2015 Sengupta P, Ryu H, Lee S, Tan Y, Klimeck G. Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators Journal of Computational Electronics. DOI: 10.1007/S10825-015-0729-6  0.558
2015 Ahmed S, Sundaresan S, Ryu H, Usman M. Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields Journal of Computational Electronics. 14: 543-556. DOI: 10.1007/S10825-015-0682-4  0.554
2014 Weber B, Ryu H, Tan YH, Klimeck G, Simmons MY. Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires. Physical Review Letters. 113: 246802. PMID 25541793 DOI: 10.1103/Physrevlett.113.246802  0.557
2014 Weber B, Tan YH, Mahapatra S, Watson TF, Ryu H, Rahman R, Hollenberg LC, Klimeck G, Simmons MY. Spin blockade and exchange in Coulomb-confined silicon double quantum dots. Nature Nanotechnology. 9: 430-5. PMID 24727686 DOI: 10.1038/Nnano.2014.63  0.665
2013 Ryu H, Lee S, Weber B, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G. Atomistic modeling of metallic nanowires in silicon. Nanoscale. 5: 8666-74. PMID 23897026 DOI: 10.1039/C3Nr01796F  0.605
2013 Ryu H, Lee S, Weber B, Mahapatra S, Simmons MY, Hollenberg LCL, Klimeck G. A tight-binding study of channel modulation in atomic-scale Si:P nanowires International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 77-80. DOI: 10.1109/SISPAD.2013.6650578  0.469
2013 Ryu H, Nam D, Ahn B, Ruth Lee J, Cho K, Lee S, Klimeck G, Shin M. Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors Mathematical and Computer Modelling. 58: 288-299. DOI: 10.1016/J.Mcm.2012.11.024  0.587
2012 Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LC, Klimeck G, Simmons MY. A single-atom transistor. Nature Nanotechnology. 7: 242-6. PMID 22343383 DOI: 10.1038/Nnano.2012.21  0.605
2012 Weber B, Mahapatra S, Ryu H, Lee S, Fuhrer A, Reusch TC, Thompson DL, Lee WC, Klimeck G, Hollenberg LC, Simmons MY. Ohm's law survives to the atomic scale. Science (New York, N.Y.). 335: 64-7. PMID 22223802 DOI: 10.1126/Science.1214319  0.584
2012 Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LCL, Klimeck G, Simmons MY. Spectroscopy of a Deterministic Single-Donor Device in Silicon Proceedings of Spie. 8400: 840006. DOI: 10.1117/12.919763  0.588
2012 Ryu H, Park H, Shin M, Vasileska D, Klimeck G. Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport Journal of Applied Physics. 111: 063705. DOI: 10.1063/1.3694740  0.548
2011 Usman M, Tan YH, Ryu H, Ahmed SS, Krenner HJ, Boykin TB, Klimeck G. Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations. Nanotechnology. 22: 315709. PMID 21737873 DOI: 10.1088/0957-4484/22/31/315709  0.641
2011 Sengupta P, Lee S, Steiger S, Ryu H, Klimeck G. Multiscale Modeling of a Quantum Dot Heterostructure Mrs Proceedings. 1370. DOI: 10.1557/Opl.2011.1055  0.591
2011 Lee S, Ryu H, Campbell H, Hollenberg LCL, Simmons MY, Klimeck G. Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers Physical Review B. 84. DOI: 10.1103/Physrevb.84.205309  0.523
2011 Usman M, Heck S, Clarke E, Spencer P, Ryu H, Murray R, Klimeck G. Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) Journal of Applied Physics. 109: 104510. DOI: 10.1063/1.3587167  0.58
2009 Usman M, Ryu H, Woo I, Ebert DS, Klimeck G. Moving toward nano-TCAD through multimillion-atom quantum-dot simulations matching experimental data Ieee Transactions On Nanotechnology. 8: 330-344. DOI: 10.1109/Tnano.2008.2011900  0.648
2009 Haley BP, Lee S, Luisier M, Ryu H, Saied F, Clark S, Bae H, Klimeck G. Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB Journal of Physics: Conference Series. 180: 012075. DOI: 10.1088/1742-6596/180/1/012075  0.489
2008 Ryu H, Klimeck G. Contact block reduction method for ballistic quantum transport with semi-empirical sp3d5 tight binding band models International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 349-352. DOI: 10.1109/ICSICT.2008.4734543  0.531
2008 Naumov M, Lee S, Haley B, Bae H, Clark S, Rahman R, Ryu H, Saied F, Klimeck G. Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D Journal of Computational Electronics. 7: 297-300. DOI: 10.1007/S10825-008-0223-5  0.67
2008 Muralidharan B, Ryu H, Huang Z, Klimeck G. NEMO-3D based atomistic simulation of a double quantum dot structure for spin-blockaded transport Journal of Computational Electronics. 7: 403-406. DOI: 10.1007/S10825-008-0203-9  0.592
2007 Klimeck G, Ahmed SS, Bae H, Clark S, Haley B, Lee S, Naumov M, Ryu H, Saied F, Prada M, Korkusinski M, Boykin TB, Rahman R. Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks Ieee Transactions On Electron Devices. 54: 2079-2089. DOI: 10.1109/Ted.2007.902879  0.709
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