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Lin Dong, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanotechnology
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15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). The Journal of Chemical Physics. 146: 052820. PMID 28178835 DOI: 10.1063/1.4975081  0.343
2016 Xu D, Chu K, Diaz JA, Ashman MD, Komiak JJ, Pleasant LMM, Vera A, Seekell P, Yang X, Creamer C, Nichols KB, Duh KHG, Smith PM, Chao PC, Dong L, et al. 0.1-μm InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess Ieee Transactions On Electron Devices. 63: 3076-3083. DOI: 10.1109/Ted.2016.2579160  0.553
2016 Chou H, O'Connor E, O'Mahony A, Povey IM, Hurley PK, Dong L, Ye PD, Afanas'ev V, Houssa M, Stesmans A. Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3 Journal of Applied Physics. 120. DOI: 10.1063/1.4971178  0.326
2016 Sardashti K, Hu KT, Tang K, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Dong L, Fruhberger B, Kummel AC. Nitride passivation of the interface between high-k dielectrics and SiGe Applied Physics Letters. 108. DOI: 10.1063/1.4939460  0.33
2015 Wu H, Si M, Dong L, Gu J, Zhang J, Ye PD. Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm Ieee Transactions On Electron Devices. 62: 1419-1426. DOI: 10.1109/Ted.2015.2412878  0.642
2015 Xu D, Chu KK, Diaz JA, Ashman M, Komiak JJ, Pleasant LM, Creamer C, Nichols K, Duh KHG, Smith PM, Chao PC, Dong L, Ye PD. 0.1-μm atomic layer deposition Al2O3 passivated InAlN/GaN high electron-mobility transistors for E-band power amplifiers Ieee Electron Device Letters. 36: 442-444. DOI: 10.1109/Led.2015.2409264  0.574
2013 Wang X, Dong L, Zhang J, Liu Y, Ye PD, Gordon RG. Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density. Nano Letters. 13: 594-9. PMID 23294262 DOI: 10.1021/Nl3041349  0.559
2013 Dong L, Wang XW, Zhang JY, Li XF, Gordon RG, Ye PD. GaAs enhancement-mode NMOSFETs enabled by atomic layer epitaxial La 1.8Y0.2O3 as dielectric Ieee Electron Device Letters. 34: 487-489. DOI: 10.1109/Led.2013.2244058  0.563
2013 Xu K, Sio H, Kirillov OA, Dong L, Xu M, Ye PD, Gundlach D, Nguyen NV. Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry Journal of Applied Physics. 113: 24504. DOI: 10.1063/1.4774038  0.328
2012 Chou HY, Afanas'ev VV, Houssa M, Stesmans A, Dong L, Ye PD. Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al 2O 3 Applied Physics Letters. 101. DOI: 10.1063/1.4747797  0.301
2012 Liu Q, Dong L, Liu Y, Gordon R, Ye PD, Fay P, Seabaugh A. Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4. DOI: 10.1016/J.Sse.2012.05.044  0.518
2008 Sun Q, Zhang C, Dong L, Shi Y, Ding S, Zhang DW. Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate Journal of Applied Physics. 103: 114102. DOI: 10.1063/1.2938073  0.342
2008 Dong L, Sun Q, Shi Y, Liu H, Wang C, Ding S, Zhang DW. Quantum chemical study of the initial surface reactions of atomic layer deposition GaAs for photonic crystal fabrication Applied Physics Letters. 92: 111105. DOI: 10.1063/1.2901880  0.339
2008 Sun Q, Shi Y, Dong L, Liu H, Ding S, Zhang DW. Impact of germanium related defects on electrical performance of hafnium oxide Applied Physics Letters. 92: 102908. DOI: 10.1063/1.2883944  0.336
2008 Sun Q, Dong L, Shi Y, Liu H, Ding S, Zhang DW. Atomic scale study of the degradation mechanism of boron contaminated hafnium oxide Applied Physics Letters. 92: 52907. DOI: 10.1063/1.2841658  0.346
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