Year |
Citation |
Score |
2016 |
Park GM, Kim YH, Yun SC, Ahn JM, Choi HI, Roh JH, Lee PH, Chang M, Lee SG, Jo MW, Park DW, Kang SJ, Lee SW, Lee CW, Moon DH, et al. Anatomical or Functional Evaluation as an Initial Test for Stable Coronary Artery Disease: A Propensity Score Analysis. Journal of Nuclear Medicine : Official Publication, Society of Nuclear Medicine. PMID 27127224 DOI: 10.2967/jnumed.115.169318 |
0.321 |
|
2000 |
Deppe DG, Park G, Shchekin OB. Temperature dependence of quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 4078: 90-99. DOI: 10.1117/12.392129 |
0.816 |
|
2000 |
Shchekin OB, Park G, Huffaker DL, Mo Q, Deppe DG. Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity Ieee Photonics Technology Letters. 12: 1120-1122. DOI: 10.1109/68.874208 |
0.821 |
|
2000 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. Low-threshold oxide-confined 1.3-μm quantum-dot laser Ieee Photonics Technology Letters. 12: 230-232. DOI: 10.1109/68.826897 |
0.816 |
|
2000 |
Park G, Shchekin OB, Deppe DG. Temperature dependence of gain saturation in multilevel quantum dot lasers Ieee Journal of Quantum Electronics. 36: 1065-1071. DOI: 10.1109/3.863959 |
0.813 |
|
2000 |
Shchekin OB, Park G, Huffaker DL, Deppe DG. Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Applied Physics Letters. 77: 466-468. DOI: 10.1063/1.127012 |
0.826 |
|
1999 |
Park G, Huffaker DL, Zou Z, Shchekin OB, Deppe DG. Temperature Dependence of Lasing Characteristics for Long-Wavelength (1.3-μm) GaAs-Based Quantum-Dot Lasers Ieee Photonics Technology Letters. 11: 301-303. DOI: 10.1109/68.748215 |
0.836 |
|
1999 |
Deppe DG, Huffaker DL, Csutak S, Zou Z, Park G, Shchekin OB. Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers Ieee Journal of Quantum Electronics. 35: 1238-1246. DOI: 10.1109/3.777226 |
0.816 |
|
1999 |
Park G, Shchekin OB, Csutak S, Huffaker DL, Deppe DG. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser Applied Physics Letters. 75: 3267-3269. DOI: 10.1063/1.125320 |
0.82 |
|
1999 |
Huffaker DL, Zou ZZ, Park G, Shchekin OB, Deppe DG. Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasers Journal of Electronic Materials. 28: 532-536. DOI: 10.1007/S11664-999-0107-X |
0.801 |
|
1998 |
Zou Z, Shchekin OB, Park G, Huffaker DL, Deppe DG. Threshold temperature dependence of lateral-cavity quantum-dot lasers Ieee Photonics Technology Letters. 10: 1673-1675. DOI: 10.1109/68.730465 |
0.825 |
|
1998 |
Park G, Shchekin OB, Huffaker DL, Deppe DG. Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels Applied Physics Letters. 73: 3351-3353. DOI: 10.1063/1.122766 |
0.813 |
|
1998 |
Huffaker DL, Park G, Zou Z, Shchekin OB, Deppe DG. 1.3 μm room-temperature GaAs-based quantum-dot laser Applied Physics Letters. 73: 2564-2566. DOI: 10.1063/1.122534 |
0.827 |
|
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