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Xiaomu Wang, Ph.D. - Publications

Affiliations: 
2012 Electronic Engineering The Chinese University of Hong Kong, Hong Kong, Hong Kong 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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57 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Su X, Huang T, Zheng B, Wang J, Wang X, Yan S, Wang X, Shi Y. Atomic-Scale Confinement and Negative Refraction of Plasmons by Twisted Bilayer Graphene. Nano Letters. 22: 8975-8982. PMID 36374517 DOI: 10.1021/acs.nanolett.2c03220  0.303
2020 Li L, Shao L, Liu X, Gao A, Wang H, Zheng B, Hou G, Shehzad K, Yu L, Miao F, Shi Y, Xu Y, Wang X. Room-temperature valleytronic transistor. Nature Nanotechnology. PMID 32690885 DOI: 10.1038/S41565-020-0727-0  0.362
2020 Li Y, Liu J, Su X, Ou Q, Wan Z, Wu Y, Yu W, Bao X, Huang Y, Wang X, Tadich A, Shabbir B, Bao Q. High performance broadband photo and soft X-ray detectors based on two dimensional CrSiTe3 Journal of Materials Chemistry C. 8: 6659-6666. DOI: 10.1039/D0Tc01354D  0.319
2020 Zeng W, Fu X, Yu L, Shi T, Liu P, Xu J, Chen J, Qiulan C, Wang X, Xie W. Growth dynamics and photoresponse of the Wadsley phase V6O13 crystals Journal of Materials Chemistry C. 8: 6470-6477. DOI: 10.1039/C9Tc06761B  0.303
2019 Gao A, Zhang Z, Li L, Zheng B, Wang C, Wang Y, Cao T, Wang Y, Liang SJ, Miao F, Shi Y, Wang X. Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures. Acs Nano. PMID 31877250 DOI: 10.1021/Acsnano.9B06140  0.429
2019 Hao S, Yan S, Wang Y, Xu T, Zhang H, Cong X, Li L, Liu X, Cao T, Gao A, Zhang L, Jia L, Long M, Hu W, Wang X, et al. Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors. Small (Weinheim An Der Bergstrasse, Germany). e1905902. PMID 31867892 DOI: 10.1002/Smll.201905902  0.334
2019 Liu W, Li L, Guo H, Qadir A, Bodepudi SC, Shehzad K, Chen W, Xie YH, Wang X, Yu B, Xu Y. Approaching the Collection Limit in Hot Electron Transistor with Ambipolar Hot Carrier Transport. Acs Nano. PMID 31755701 DOI: 10.1021/Acsnano.9B07020  0.414
2019 Liu K, Wang W, Yu Y, Hou X, Liu Y, Chen W, Wang X, Lu J, Ni Z. Graphene-based infrared position-sensitive detector for precise measurements and high-speed trajectory tracking. Nano Letters. PMID 31556623 DOI: 10.1021/Acs.Nanolett.9B03368  0.4
2019 Hu F, Kim M, Zhang Y, Luan Y, Ho K, Shi Y, Wang C, Wang X, Fei Z. Tailor plasmons in pentacene/graphene heterostructures with interlayer electron transfer. Nano Letters. PMID 31398046 DOI: 10.1021/Acs.Nanolett.9B01945  0.499
2019 Chen X, Shehzad K, Gao L, Long M, Guo H, Qin S, Wang X, Wang F, Shi Y, Hu W, Xu Y, Wang X. Graphene Hybrid Structures for Integrated and Flexible Optoelectronics. Advanced Materials (Deerfield Beach, Fla.). e1902039. PMID 31282020 DOI: 10.1002/Adma.201902039  0.444
2019 Li L, Liu W, Gao A, Zhao Y, Lu Q, Yu L, Wang J, Yu L, Shao L, Miao F, Shi Y, Xu Y, Wang X. Plasmon Excited Ultrahot Carriers and Negative Differential Photoresponse in a Vertical Graphene van der Waals Heterostructure. Nano Letters. PMID 31025869 DOI: 10.1021/Acs.Nanolett.9B00908  0.505
2019 He R, Chen Z, Lai H, Zhang T, Wen J, Chen H, Xie F, Yue S, Liu P, Chen J, Xie W, Wang X, Xu J. Van der Waals transition metal oxide for vis-MIR broadband photodetection via intercalation strategy. Acs Applied Materials & Interfaces. PMID 30920195 DOI: 10.1021/Acsami.9B00181  0.493
2019 Gao A, Lai J, Wang Y, Zhu Z, Zeng J, Yu G, Wang N, Chen W, Cao T, Hu W, Sun D, Chen X, Miao F, Shi Y, Wang X. Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures. Nature Nanotechnology. PMID 30664752 DOI: 10.1038/S41565-018-0348-Z  0.382
2018 Yu L, Zhu Z, Gao A, Wang J, Miao F, Shi Y, Wang X. Electrically tunable optical properties of few layers black arsenic phosphorus. Nanotechnology. PMID 30204123 DOI: 10.1088/1361-6528/Aae05F  0.388
2018 Jiang J, Ling C, Xu T, Wang W, Niu X, Zafar A, Yan Z, Wang X, You Y, Sun L, Lu J, Wang J, Ni Z. Defect Engineering for Modulating the Trap States in 2D Photoconductors. Advanced Materials (Deerfield Beach, Fla.). e1804332. PMID 30168633 DOI: 10.1002/Adma.201804332  0.328
2018 Liu Y, Liu C, Wang X, He L, Wan X, Xu Y, Shi Y, Zhang R, Wang F. Photoresponsivity of an all-semimetal heterostructure based on graphene and WTe. Scientific Reports. 8: 12840. PMID 30150760 DOI: 10.1038/S41598-018-29717-8  0.481
2017 Chen X, Liu X, Wu B, Nan H, Guo H, Ni Z, Wang F, Wang X, Shi Y, Wang X. Improving the performance of graphene phototransistors using a heterostructure as light-absorbing layer. Nano Letters. PMID 28876943 DOI: 10.1021/Acs.Nanolett.7B03263  0.485
2017 Long M, Gao A, Wang P, Xia H, Ott C, Pan C, Fu Y, Liu E, Chen X, Lu W, Nilges T, Xu J, Wang X, Hu W, Miao F. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Science Advances. 3: e1700589. PMID 28695200 DOI: 10.1126/Sciadv.1700589  0.472
2017 Deng B, Tran V, Xie Y, Jiang H, Li C, Guo Q, Wang X, Tian H, Koester SJ, Wang H, Cha JJ, Xia Q, Yang L, Xia F. Efficient electrical control of thin-film black phosphorus bandgap. Nature Communications. 8: 14474. PMID 28422160 DOI: 10.1038/Ncomms14474  0.379
2017 Fu Y, Long M, Gao A, Wang Y, Pan C, Liu X, Zeng J, Xu K, Zhang L, Liu E, Hu W, Wang X, Miao F. Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping Applied Physics Letters. 111: 43502. DOI: 10.1063/1.4995400  0.385
2017 Zhang Y, Guo Y, Song L, Qian J, Jiang S, Wang Q, Wang X, Shi Y, Wang X, Li Y. Directly writing 2D organic semiconducting crystals for high-performance field-effect transistors Journal of Materials Chemistry C. 5: 11246-11251. DOI: 10.1039/C7Tc02348K  0.326
2017 Xu Y, Ali A, Shehzad K, Meng N, Xu M, Zhang Y, Wang X, Jin C, Wang H, Guo Y, Yang Z, Yu B, Liu Y, He Q, Duan X, ... Wang X, et al. Photodetectors: Solvent-Based Soft-Patterning of Graphene Lateral Heterostructures for Broadband High-Speed Metal-Semiconductor-Metal Photodetectors (Adv. Mater. Technol. 2/2017) Advanced Materials Technologies. 2. DOI: 10.1002/Admt.201770009  0.377
2016 Wu B, Zhao Y, Nan H, Yang Z, Zhang Y, Zhao H, He D, Jiang Z, Liu X, Li Y, Shi Y, Ni Z, Wang J, Xu JB, Wang X. Precise, self-limited epitaxy of ultrathin organic semiconductors and heterojunctions tailored by van der Waals interactions. Nano Letters. PMID 27183049 DOI: 10.1021/Acs.Nanolett.6B01108  0.476
2016 Liu X, Luo X, Nan H, Guo H, Wang P, Zhang L, Zhou M, Yang Z, Shi Y, Hu W, Ni Z, Qiu T, Yu Z, Xu JB, Wang X. Epitaxial Ultrathin Organic Crystals on Graphene for High-Efficiency Phototransistors. Advanced Materials (Deerfield Beach, Fla.). PMID 27146896 DOI: 10.1002/Adma.201600400  0.524
2016 Zhang Y, Qiao J, Gao S, Hu F, He D, Wu B, Yang Z, Xu B, Li Y, Shi Y, Ji W, Wang P, Wang X, Xiao M, Xu H, ... ... Wang X, et al. Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit. Physical Review Letters. 116: 016602. PMID 26799035 DOI: 10.1103/Physrevlett.116.016602  0.469
2016 Wang X, Lan S. Optical properties of black phosphorus Advances in Optics and Photonics. 8: 618. DOI: 10.1364/Aop.8.000618  0.379
2016 Xu Y, Ali A, Shehzad K, Meng N, Xu M, Zhang Y, Wang X, Jin C, Wang H, Guo Y, Yang Z, Yu B, Liu Y, He Q, Duan X, ... Wang X, et al. Solvent-Based Soft-Patterning of Graphene Lateral Heterostructures for Broadband High-Speed Metal-Semiconductor-Metal Photodetectors Advanced Materials Technologies. 2: 1600241. DOI: 10.1002/Admt.201600241  0.481
2015 Liu Y, Wang F, Wang X, Wang X, Flahaut E, Liu X, Li Y, Wang X, Xu Y, Shi Y, Zhang R. Planar carbon nanotube-graphene hybrid films for high-performance broadband photodetectors. Nature Communications. 6: 8589. PMID 26446884 DOI: 10.1038/Ncomms9589  0.462
2015 Wang X, Tian H, Mohammad MA, Li C, Wu C, Yang Y, Ren TL. A spectrally tunable all-graphene-based flexible field-effect light-emitting device. Nature Communications. 6: 7767. PMID 26178323 DOI: 10.1038/Ncomms8767  0.482
2015 Liu B, Köpf M, Abbas AN, Wang X, Guo Q, Jia Y, Xia F, Weihrich R, Bachhuber F, Pielnhofer F, Wang H, Dhall R, Cronin SB, Ge M, Fang X, et al. Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties. Advanced Materials (Deerfield Beach, Fla.). PMID 26112061 DOI: 10.1002/Adma.201501758  0.351
2015 Wang X, Jones AM, Seyler KL, Tran V, Jia Y, Zhao H, Wang H, Yang L, Xu X, Xia F. Highly anisotropic and robust excitons in monolayer black phosphorus. Nature Nanotechnology. 10: 517-21. PMID 25915195 DOI: 10.1038/Nnano.2015.71  0.428
2015 Wang X, Xia F. Van der Waals heterostructures: Stacked 2D materials shed light. Nature Materials. 14: 264-5. PMID 25643031 DOI: 10.1038/Nmat4218  0.322
2015 Wang X, Tian H, Xie W, Shu Y, Mi WT, Mohammad MA, Xie QY, Yang Y, Xu JB, Ren TL. Observation of a giant two-dimensional band-piezoelectric effect on biaxial-strained graphene Npg Asia Materials. 7: e154. DOI: 10.1038/Am.2014.124  0.591
2015 Jia Y, Zhao H, Guo Q, Wang X, Wang H, Xia F. Tunable Plasmon-Phonon Polaritons in Layered Graphene-Hexagonal Boron Nitride Heterostructures Acs Photonics. 2: 907-912. DOI: 10.1021/Acsphotonics.5B00099  0.468
2015 Zhao H, Wu J, Zhong H, Guo Q, Wang X, Xia F, Yang L, Tan P, Wang H. Interlayer interactions in anisotropic atomically thin rhenium diselenide Nano Research. 8: 3651-3661. DOI: 10.1007/S12274-015-0865-0  0.355
2014 Wang H, Wang X, Xia F, Wang L, Jiang H, Xia Q, Chin ML, Dubey M, Han SJ. Black phosphorus radio-frequency transistors. Nano Letters. 14: 6424-9. PMID 25347787 DOI: 10.1021/Nl5029717  0.371
2014 He D, Zhang Y, Wu Q, Xu R, Nan H, Liu J, Yao J, Wang Z, Yuan S, Li Y, Shi Y, Wang J, Ni Z, He L, Miao F, ... ... Wang X, et al. Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors. Nature Communications. 5: 5162. PMID 25330787 DOI: 10.1038/Ncomms6162  0.525
2014 Tian H, Tan Z, Wu C, Wang X, Mohammad MA, Xie D, Yang Y, Wang J, Li LJ, Xu J, Ren TL. Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions. Scientific Reports. 4: 5951. PMID 25109609 DOI: 10.1038/Srep05951  0.485
2014 Wang X, Xie W, Xu JB. Graphene based non-volatile memory devices. Advanced Materials (Deerfield Beach, Fla.). 26: 5496-503. PMID 24497002 DOI: 10.1002/Adma.201306041  0.543
2014 Wang X, Xie W, Chen J, Xu JB. Homo- and hetero- p-n junctions formed on graphene steps. Acs Applied Materials & Interfaces. 6: 3-8. PMID 24182202 DOI: 10.1021/Am402808P  0.598
2014 Cheng Z, Tsang HK, Wang X, Xu K, Xu J. In-Plane Optical Absorption and Free Carrier Absorption in Graphene-on-Silicon Waveguides Ieee Journal of Selected Topics in Quantum Electronics. 20: 43-48. DOI: 10.1109/Jstqe.2013.2263115  0.577
2014 Xie WG, Lai X, Wang XM, Wan X, Yan ML, Mai WJ, Liu PY, Chen J, Xu JB. Influence of annealing on raman spectrum of graphene in different gaseous environments Spectroscopy Letters. 47: 465-470. DOI: 10.1080/00387010.2013.809595  0.577
2013 Wang X, Xu H, Min J, Peng LM, Xu JB. Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances. Nanoscale. 5: 2811-7. PMID 23440092 DOI: 10.1039/C3Nr33940H  0.549
2013 Wang X, Cheng Z, Xu K, Tsang HK, Xu J. High-responsivity graphene/silicon-heterostructure waveguide photodetectors Nature Photonics. 7: 888-891. DOI: 10.1038/Nphoton.2013.241  0.59
2013 Shao L, Wang X, Xu H, Wang J, Xu J, Peng L, Lin H. Nanoantenna-Sandwiched Graphene with Giant Spectral Tuning in the Visible-to-Near-Infrared Region Advanced Optical Materials. 2: 162-170. DOI: 10.1002/Adom.201300313  0.61
2012 Wang X, Xie W, Du J, Wang C, Zhao N, Xu JB. Graphene/metal contacts: bistable states and novel memory devices. Advanced Materials (Deerfield Beach, Fla.). 24: 2614-9. PMID 22488980 DOI: 10.1002/Adma.201104574  0.593
2012 Wang X, Wang C, Xu J. P-N Junction Formation in Electron-beam Irradiated Graphene Step Mrs Proceedings. 1407. DOI: 10.1557/Opl.2012.777  0.577
2012 Xie W, Wang X, Xu J. Intermolecular Coupling Related Electrical Transport Transition in Vanadyl-Phthalocyanine (VOPc) Molecular Bilayers The Journal of Physical Chemistry C. 116: 17580-17585. DOI: 10.1021/Jp304103G  0.459
2012 Chen K, Wang X, Xu J, Pan L, Wang X, Shi Y. Electronic Properties of Graphene Altered by Substrate Surface Chemistry and Externally Applied Electric Field The Journal of Physical Chemistry C. 116: 6259-6267. DOI: 10.1021/Jp211255T  0.602
2011 Wang X, Xu JB, Wang C, Du J, Xie W. High-performance graphene devices on SiO₂/Si substrate modified by highly ordered self-assembled monolayers. Advanced Materials (Deerfield Beach, Fla.). 23: 2464-8. PMID 21484896 DOI: 10.1002/Adma.201100476  0.556
2011 Wang C, Liang Z, Liu Y, Wang X, Zhao N, Miao Q, Hu W, Xu J. Single crystal n-channel field effect transistors from solution-processed silylethynylated tetraazapentacene Journal of Materials Chemistry. 21: 15201. DOI: 10.1039/C1Jm13153B  0.447
2011 Wang X, Xu J, Xie W, Du J. Quantitative Analysis of Graphene Doping by Organic Molecular Charge Transfer The Journal of Physical Chemistry C. 115: 7596-7602. DOI: 10.1021/Jp200386Z  0.605
2011 Wang C, Wang X, Min J, Zhao N, Xu J. Super-linear rectifying property of rubrene single crystal devices Organic Electronics. 12: 1731-1735. DOI: 10.1016/J.Orgel.2011.06.024  0.524
2010 Tian X, Xu J, Wang X. Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field. The Journal of Physical Chemistry. B. 114: 11377-81. PMID 20690622 DOI: 10.1021/Jp102800V  0.567
2010 Wang X, Song F, Chen Q, Wang T, Wang J, Liu P, Shen M, Wan J, Wang G, Xu JB. Scaling dopant states in a semiconducting nanostructure by chemically resolved electron energy-loss spectroscopy: a case study on Co-doped ZnO. Journal of the American Chemical Society. 132: 6492-7. PMID 20405827 DOI: 10.1021/Ja100912K  0.454
2009 Hua R, Xu JB, Wang JC, Zhu L, Li B, Liu Y, Huang SD, Jin L, Xu ZY, Wang XF. Association of TNFAIP3 polymorphism with rheumatic heart disease in Chinese Han population. Immunogenetics. 61: 739-44. PMID 19902201 DOI: 10.1007/S00251-009-0405-8  0.316
2009 Zhang ZH, Wang X, Xu JB, Muller S, Ronning C, Li Q. Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures. Nature Nanotechnology. 4: 523-7. PMID 19662016 DOI: 10.1038/Nnano.2009.181  0.391
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