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Zhibin Xiong, Ph.D. - Publications

Affiliations: 
2005 Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 
Area:
Electronics and Electrical Engineering
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9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Sun J, Jiang FXC, Guan L, Xiong Z, Yan G, Sin JKO. A New Isolation Technology for Automotive Power-Integrated-Circuit Applications Ieee Transactions On Electron Devices. 56: 2144-2149. DOI: 10.1109/Ted.2009.2026089  0.505
2006 Guan L, Sin JKO, Liu H, Xiong Z. A fully integrated SOI RF MEMS technology for system-on-a-chip applications Ieee Transactions On Electron Devices. 53: 167-172. DOI: 10.1109/Ted.2005.860638  0.542
2005 Xiong Z, Liu H, Zhu C, Sin JKO. A new polysilicon CMOS self-aligned double-gate TFT technology Ieee Transactions On Electron Devices. 52: 2629-2633. DOI: 10.1109/Ted.2005.859686  0.447
2005 Guan L, Sin JKO, Xiong Z, Liu H. A novel SOI lateral-power MOSFET with a self-aligned drift region Ieee Electron Device Letters. 26: 264-266. DOI: 10.1109/Led.2005.844717  0.519
2004 Xiong Z, Liu H, Zhu C, Sin JKO. Characteristics of high-K spacer offset-gated polysilicon TFTs Ieee Transactions On Electron Devices. 51: 1304-1308. DOI: 10.1109/Ted.2004.832720  0.356
2004 Xiong Z, Liu H, Zhu C, Sin JKO. A novel self-aligned offset-gated polysilicon TFT using high-/spl kappa/ dielectric spacers Ieee Electron Device Letters. 25: 194-195. DOI: 10.1109/Led.2004.825206  0.358
2003 Liu H, Xiong Z, Sin JKO. Implementation and characterization of the double-gate MOSFET using lateral solid-phase epitaxy Ieee Transactions On Electron Devices. 50: 1552-1555. DOI: 10.1109/Ted.2003.813332  0.405
2003 Liu H, Xiong Z, Sin JKO. An ultrathin vertical channel MOSFET for sub-100-nm applications Ieee Transactions On Electron Devices. 50: 1322-1327. DOI: 10.1109/Ted.2003.813243  0.41
2003 Liu H, Xiong Z, Sin JKO. A novel ultrathin vertical channel NMOSFET with asymmetric fully overlapped LDD Ieee Electron Device Letters. 24: 84-86. DOI: 10.1109/Led.2002.808153  0.377
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