| Year |
Citation |
Score |
| 2022 |
Oh IK, Sandoval TE, Liu TL, Richey NE, Nguyen CT, Gu B, Lee HB, Tonner-Zech R, Bent SF. Elucidating the Reaction Mechanism of Atomic Layer Deposition of AlO with a Series of Al(CH)Cl and Al(CH) Precursors. Journal of the American Chemical Society. 144: 11757-11766. PMID 35674504 DOI: 10.1021/jacs.2c03752 |
0.318 |
|
| 2022 |
Schneider JR, de Paula C, Lewis J, Woodruff J, Raiford JA, Bent SF. The Importance of Decarbonylation Mechanisms in the Atomic Layer Deposition of High-Quality Ru Films by Zero-Oxidation State Ru(DMBD)(CO). Small (Weinheim An Der Bergstrasse, Germany). e2105513. PMID 34989132 DOI: 10.1002/smll.202105513 |
0.316 |
|
| 2021 |
Liu TL, Zeng L, Nardi KL, Hausmann DM, Bent SF. Characterizing Self-Assembled Monolayer Breakdown in Area-Selective Atomic Layer Deposition. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 34550696 DOI: 10.1021/acs.langmuir.1c02211 |
0.338 |
|
| 2020 |
Liu TL, Nardi KL, Draeger N, Hausmann DM, Bent SF. Effect of Multilayer versus Monolayer Dodecanethiol on Selectivity and Pattern Integrity in Area-Selective Atomic Layer Deposition. Acs Applied Materials & Interfaces. PMID 32805867 DOI: 10.1021/Acsami.0C08873 |
0.396 |
|
| 2020 |
Richey NE, de Paula C, Bent SF. Understanding chemical and physical mechanisms in atomic layer deposition. The Journal of Chemical Physics. 152: 040902. PMID 32007080 DOI: 10.1063/1.5133390 |
0.392 |
|
| 2020 |
Oh IK, Kim WH, Zeng L, Singh J, Bae D, Mackus AJM, Song JG, Seo S, Shong B, Kim H, Bent SF. Synthesis of a Hybrid Nanostructure of ZnO-Decorated MoS2 by Atomic Layer Deposition. Acs Nano. PMID 31967453 DOI: 10.1021/Acsnano.9B07467 |
0.405 |
|
| 2020 |
Oh IK, Zeng L, Kim JE, Park JS, Kim K, Lee H, Seo S, Khan MR, Kim S, Bark CW, Lee J, Shong B, Lee Z, Bent SF, Kim H, et al. Surface Energy Change of Atomic-Scale Metal Oxide Thin Films by Phase Transformation. Acs Nano. PMID 31927973 DOI: 10.1021/Acsnano.9B07430 |
0.437 |
|
| 2020 |
Raiford JA, Oyakhire ST, Bent SF. Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells Energy and Environmental Science. 13: 1997-2023. DOI: 10.1039/D0Ee00385A |
0.362 |
|
| 2020 |
Sandoval TE, Pieck F, Tonner R, Bent SF. Effect of Hetero-Aromaticity on Adsorption of Pyrazine on the Ge(100)-2×1 Surface Journal of Physical Chemistry C. DOI: 10.1021/Acs.Jpcc.0C04673 |
0.416 |
|
| 2020 |
Baker JG, Schneider JR, Raiford JA, Paula Cd, Bent SF. Nucleation Effects in the Atomic Layer Deposition of Nickel-Aluminum Oxide Thin Films Chemistry of Materials. 32: 1925-1936. DOI: 10.1021/Acs.Chemmater.9B04630 |
0.417 |
|
| 2020 |
Paula Cd, Richey NE, Zeng L, Bent SF. Mechanistic Study of Nucleation Enhancement in Atomic Layer Deposition by Pretreatment with Small Organometallic Molecules Chemistry of Materials. 32: 315-325. DOI: 10.1021/Acs.Chemmater.9B03826 |
0.4 |
|
| 2020 |
Boyd CC, Shallcross RC, Moot T, Kerner R, Bertoluzzi L, Onno A, Kavadiya S, Chosy C, Wolf EJ, Werner J, Raiford JA, Paula Cd, Palmstrom AF, Yu ZJ, Berry JJ, ... Bent SF, et al. Overcoming Redox Reactions at Perovskite-Nickel Oxide Interfaces to Boost Voltages in Perovskite Solar Cells Joule. 4: 1759-1775. DOI: 10.1016/J.Joule.2020.06.004 |
0.347 |
|
| 2020 |
Schneider JR, Baker JG, Bent SF. The Influence of Ozone: Superstoichiometric Oxygen in Atomic Layer Deposition of Fe2O3 Using tert‐Butylferrocene and O3 Advanced Materials Interfaces. 7: 2000318. DOI: 10.1002/Admi.202000318 |
0.312 |
|
| 2019 |
Asundi AS, Hoffman AS, Bothra P, Boubnov A, Vila F, Yang N, Singh JA, Zeng L, Raiford JA, Abild-Pedersen F, Bare SR, Bent SF. Understanding Structure-Property Relationships of MoO-Promoted Rh Catalysts for Syngas Conversion to Alcohols. Journal of the American Chemical Society. PMID 31724857 DOI: 10.1021/Jacs.9B07460 |
0.338 |
|
| 2019 |
Closser RG, Lillethorup M, Bergsman DS, Bent SF. Growth of a Surface-Tethered, All-Carbon Backboned Fluoropolymer by Photoactivated Molecular Layer Deposition. Acs Applied Materials & Interfaces. PMID 31180195 DOI: 10.1021/Acsami.9B03462 |
0.417 |
|
| 2019 |
Raiford JA, Belisle RA, Bush KA, Prasanna R, Palmstrom AF, McGehee MD, Bent SF. Atomic layer deposition of vanadium oxide to reduce parasitic absorption and improve stability in n–i–p perovskite solar cells for tandems Sustainable Energy and Fuels. 3: 1517-1525. DOI: 10.1039/C9Se00081J |
0.338 |
|
| 2019 |
Prasanna R, Leijtens T, Dunfield SP, Raiford JA, Wolf EJ, Swifter SA, Werner J, Eperon GE, Paula Cd, Palmstrom AF, Boyd CC, Hest MFAMv, Bent SF, Teeter G, Berry JJ, et al. Design of low bandgap tin-lead halide perovskite solar cells to achieve thermal, atmospheric and operational stability Nature Energy. 4: 939-947. DOI: 10.1038/S41560-019-0471-6 |
0.3 |
|
| 2019 |
Asundi AS, Raiford JA, Bent SF. Opportunities for Atomic Layer Deposition in Emerging Energy Technologies Acs Energy Letters. 4: 908-925. DOI: 10.1021/Acsenergylett.9B00249 |
0.321 |
|
| 2019 |
Bobb-Semple D, Nardi KL, Draeger N, Hausmann DM, Bent SF. Area-Selective Atomic Layer Deposition Assisted by Self-Assembled Monolayers: A Comparison of Cu, Co, W, and Ru Chemistry of Materials. 31: 1635-1645. DOI: 10.1021/Acs.Chemmater.8B04926 |
0.338 |
|
| 2019 |
Mackus AJM, Schneider JR, MacIsaac C, Baker JG, Bent SF. Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review Chemistry of Materials. 31: 1142-1183. DOI: 10.1021/Acs.Chemmater.8B02878 |
0.357 |
|
| 2019 |
Raiford JA, Boyd CC, Palmstrom AF, Wolf EJ, Fearon BA, Berry JJ, McGehee MD, Bent SF. Enhanced Nucleation of Atomic Layer Deposited Contacts Improves Operational Stability of Perovskite Solar Cells in Air Advanced Energy Materials. 9: 1902353. DOI: 10.1002/Aenm.201902353 |
0.313 |
|
| 2019 |
Bergsman DS, Baker JG, Closser RG, MacIsaac C, Lillethorup M, Strickler AL, Azarnouche L, Godet L, Bent SF. Structurally Stable Manganese Alkoxide Films Grown by Hybrid Molecular Layer Deposition for Electrochemical Applications Advanced Functional Materials. 29: 1904129. DOI: 10.1002/Adfm.201904129 |
0.389 |
|
| 2018 |
Closser RG, Bergsman DS, Bent SF. Molecular Layer Deposition of a Highly Stable Silicon Oxycarbide Thin Film Using an Organic Chlorosilane and Water. Acs Applied Materials & Interfaces. PMID 29965720 DOI: 10.1021/Acsami.8B06057 |
0.427 |
|
| 2018 |
Singh JA, Thissen NFW, Kim WH, Johnson H, Kessels WMM, Bol AA, Bent SF, Mackus AJM. Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation. Chemistry of Materials : a Publication of the American Chemical Society. 30: 663-670. PMID 29503508 DOI: 10.1021/Acs.Chemmater.7B03818 |
0.369 |
|
| 2018 |
Kim W, Sung D, Oh S, Woo J, Lim S, Lee H, Bent SF. Thermal adsorption-enhanced atomic layer etching of Si3N4 Journal of Vacuum Science and Technology. 36. DOI: 10.1116/1.5003271 |
0.368 |
|
| 2018 |
Bergsman DS, Liu T, Closser RG, Nardi KL, Draeger N, Hausmann DM, Bent SF. Formation and Ripening of Self-Assembled Multilayers from the Vapor-Phase Deposition of Dodecanethiol on Copper Oxide Chemistry of Materials. 30: 5694-5703. DOI: 10.1021/Acs.Chemmater.8B02150 |
0.429 |
|
| 2018 |
Bergsman DS, Closser RG, Bent SF. Mechanistic Studies of Chain Termination and Monomer Absorption in Molecular Layer Deposition Chemistry of Materials. 30: 5087-5097. DOI: 10.1021/Acs.Chemmater.8B01468 |
0.406 |
|
| 2018 |
Palmstrom AF, Raiford JA, Prasanna R, Bush KA, Sponseller M, Cheacharoen R, Minichetti MC, Bergsman DS, Leijtens T, Wang H, Bulović V, McGehee MD, Bent SF. Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics Advanced Energy Materials. 8: 1800591. DOI: 10.1002/Aenm.201800591 |
0.334 |
|
| 2018 |
MacIsaac C, Schneider JR, Closser RG, Hellstern TR, Bergsman DS, Park J, Liu Y, Sinclair R, Bent SF. Atomic and Molecular Layer Deposition of Hybrid Mo-Thiolate Thin Films with Enhanced Catalytic Activity Advanced Functional Materials. 28: 1800852. DOI: 10.1002/Adfm.201800852 |
0.397 |
|
| 2017 |
Sandoval TE, Bent SF. Adsorption of Homotrifunctional 1,2,3-Benzenetriol on a Ge(100)-2 × 1 Surface. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 28574269 DOI: 10.1021/Acs.Langmuir.7B00872 |
0.37 |
|
| 2017 |
Shong B, Yoo JS, Sandoval TE, Bent SF. Formation of Germa-ketenimine on the Ge(100) Surface by Adsorption of tert-Butyl Isocyanide. Journal of the American Chemical Society. PMID 28560877 DOI: 10.1021/Jacs.7B04755 |
0.447 |
|
| 2017 |
Singh JA, Yang N, Bent SF. Nanoengineering Heterogeneous Catalysts by Atomic Layer Deposition. Annual Review of Chemical and Biomolecular Engineering. PMID 28301732 DOI: 10.1146/Annurev-Chembioeng-060816-101547 |
0.31 |
|
| 2017 |
Mackus AJ, MacIsaac C, Kim WH, Bent SF. Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide. The Journal of Chemical Physics. 146: 052802. PMID 28178803 DOI: 10.1063/1.4961459 |
0.382 |
|
| 2017 |
Closser RG, Bergsman DS, Ruelas L, Hashemi FSM, Bent SF. Correcting defects in area selective molecular layer deposition Journal of Vacuum Science and Technology. 35: 31509. DOI: 10.1116/1.4980049 |
0.404 |
|
| 2017 |
Hultqvist A, Sone T, Bent SF. Buffer Layer Point Contacts for CIGS Solar Cells Using Nanosphere Lithography and Atomic Layer Deposition Ieee Journal of Photovoltaics. 7: 322-328. DOI: 10.1109/Jphotov.2016.2627621 |
0.328 |
|
| 2017 |
Yang N, Yoo JS, Schumann J, Bothra P, Singh JA, Valle E, Abild-Pedersen F, Nørskov JK, Bent SF. Rh-MnO Interface Sites Formed by Atomic Layer Deposition Promote Syngas Conversion to Higher Oxygenates Acs Catalysis. 7: 5746-5757. DOI: 10.1021/Acscatal.7B01851 |
0.361 |
|
| 2017 |
Singh JA, Yang N, Liu X, Tsai C, Stone KH, Johnson B, Koh AL, Bent SF. Understanding the Active Sites of CO Hydrogenation on Pt–Co Catalysts Prepared Using Atomic Layer Deposition Journal of Physical Chemistry C. DOI: 10.1021/Acs.Jpcc.7B10541 |
0.332 |
|
| 2017 |
Sandoval TE, Bent SF. Chemisorption of Organic Triols on Ge(100)-2 × 1 Surface: Effect of Backbone Structure on Adsorption of Trifunctional Molecules Journal of Physical Chemistry C. 121: 25978-25985. DOI: 10.1021/Acs.Jpcc.7B10446 |
0.407 |
|
| 2017 |
Shong B, Kachian J, Bent SF. Autocatalytic Dissociative Adsorption of Imidazole on the Ge(100)-2 × 1 Surface Journal of Physical Chemistry C. 121: 20905-20910. DOI: 10.1021/Acs.Jpcc.7B07691 |
0.376 |
|
| 2017 |
Lillethorup M, Bergsman DS, Sandoval TE, Bent SF. Photoactivated Molecular Layer Deposition through Iodo−Ene Coupling Chemistry Chemistry of Materials. 29: 9897-9906. DOI: 10.1021/Acs.Chemmater.7B01780 |
0.411 |
|
| 2017 |
Bergsman DS, Closser RG, Tassone CJ, Clemens BM, Nordlund D, Bent SF. Effect of Backbone Chemistry on the Structure of Polyurea Films Deposited by Molecular Layer Deposition Chemistry of Materials. 29: 1192-1203. DOI: 10.1021/Acs.Chemmater.6B04530 |
0.386 |
|
| 2017 |
Manzoor S, Yu ZJ, Ali A, Ali W, Bush KA, Palmstrom AF, Bent SF, McGehee MD, Holman ZC. Improved light management in planar silicon and perovskite solar cells using PDMS scattering layer Solar Energy Materials and Solar Cells. 173: 59-65. DOI: 10.1016/J.Solmat.2017.06.020 |
0.38 |
|
| 2017 |
Yang N, Bent SF. Investigation of inherent differences between oxide supports in heterogeneous catalysis in the absence of structural variations Journal of Catalysis. 351: 49-58. DOI: 10.1016/J.Jcat.2017.04.003 |
0.343 |
|
| 2017 |
Zeng J, Xu X, Parameshwaran V, Baker J, Bent S, Wong HP, Clemens B. Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO
x
Electrocatalysts Journal of Electronic Materials. 47: 932-937. DOI: 10.1007/S11664-017-5824-Y |
0.397 |
|
| 2016 |
Narkeviciute I, Chakthranont P, Mackus AJ, Hahn C, Pinaud BA, Bent SF, Jaramillo TF. Tandem Core-Shell Si-Ta3N5 Photoanodes for Photoelectrochemical Water Splitting. Nano Letters. 16: 7565-7572. PMID 27960454 DOI: 10.1021/Acs.Nanolett.6B03408 |
0.364 |
|
| 2016 |
Minaye Hashemi FS, Birchansky BR, Bent SF. Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal-Dielectric Patterns. Acs Applied Materials & Interfaces. 8: 33264-33272. PMID 27934166 DOI: 10.1021/Acsami.6B09960 |
0.406 |
|
| 2016 |
Bae D, Palmstrom AF, Roelofs K, Mei BT, Chorkendorff I, Bent SF, Vesborg PC. Tailoring mixed halide, wide gap perovskites via multi-step conversion process. Acs Applied Materials & Interfaces. PMID 27227816 DOI: 10.1021/Acsami.6B01246 |
0.333 |
|
| 2016 |
Yang N, Medford AJ, Liu X, Studt F, Bligaard T, Bent SF, Nørskov JK. Intrinsic Selectivity and Structure Sensitivity of Rhodium Catalysts for C2+ Oxygenate Production. Journal of the American Chemical Society. PMID 26958997 DOI: 10.1021/Jacs.5B12087 |
0.316 |
|
| 2016 |
Kim WH, Minaye Hashemi FS, Mackus AJ, Singh J, Kim Y, Bobb-Semple D, Fan Y, Kaufman-Osborn T, Godet L, Bent SF. A Process for Topographically-Selective Deposition on 3D Nanostructures by Ion Implantation. Acs Nano. PMID 26950397 DOI: 10.1021/Acsnano.6B00094 |
0.368 |
|
| 2016 |
Hägglund C, Grehl T, Tanskanen JT, Yee YS, Mullings MN, Mackus AJM, MacIsaac C, Clemens BM, Brongersma HH, Bent SF. Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 34: 021516. DOI: 10.1116/1.4941411 |
0.401 |
|
| 2016 |
Hägglund C, Zeltzer G, Ruiz R, Wangperawong A, Roelofs KE, Bent SF. Strong Coupling of Plasmon and Nanocavity Modes for Dual-Band, Near-Perfect Absorbers and Ultrathin Photovoltaics Acs Photonics. 3: 456-463. DOI: 10.1021/Acsphotonics.5B00651 |
0.307 |
|
| 2016 |
Dasgupta NP, Lee HBR, Bent SF, Weiss PS. Recent Advances in Atomic Layer Deposition Chemistry of Materials. 28: 1943-1947. DOI: 10.1021/Acs.Chemmater.6B00673 |
0.338 |
|
| 2016 |
Roelofs KE, Pool VL, Bobb-Semple DA, Palmstrom AF, Santra PK, Van Campen DG, Toney MF, Bent SF. Impact of Conformality and Crystallinity for Ultrathin 4 nm Compact TiO2Layers in Perovskite Solar Cells Advanced Materials Interfaces. 3: 1600580. DOI: 10.1002/Admi.201600580 |
0.395 |
|
| 2016 |
Hashemi FSM, Bent SF. Sequential Regeneration of Self‐Assembled Monolayers for Highly Selective Atomic Layer Deposition Advanced Materials Interfaces. 3: 1600464. DOI: 10.1002/Admi.201600464 |
0.404 |
|
| 2015 |
Trejo O, Roelofs KE, Xu S, Logar M, Sarangi R, Nordlund D, Dadlani AL, Kravec R, Dasgupta NP, Bent SF, Prinz FB. Quantifying geometric strain at the PbS QD-TiO2 anode interface and its effect on electronic structures. Nano Letters. PMID 26554814 DOI: 10.1021/Acs.Nanolett.5B02373 |
0.373 |
|
| 2015 |
Shong B, Sandoval TE, Crow AM, Bent SF. Unidirectional Adsorption of Bifunctional 1,4-Phenylene Diisocyanide on the Ge(100)-2 × 1 Surface. The Journal of Physical Chemistry Letters. 6: 1037-41. PMID 26262866 DOI: 10.1021/Acs.Jpclett.5B00098 |
0.378 |
|
| 2015 |
Minaye Hashemi FS, Prasittichai C, Bent SF. Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition. Acs Nano. 9: 8710-7. PMID 26181140 DOI: 10.1021/Acsnano.5B03125 |
0.78 |
|
| 2015 |
Palmstrom AF, Santra PK, Bent SF. Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties. Nanoscale. 7: 12266-83. PMID 26147328 DOI: 10.1039/C5Nr02080H |
0.342 |
|
| 2015 |
Pickrahn KL, Gorlin Y, Seitz LC, Garg A, Nordlund D, Jaramillo TF, Bent SF. Applications of ALD MnO to electrochemical water splitting. Physical Chemistry Chemical Physics : Pccp. 17: 14003-11. PMID 25946998 DOI: 10.1039/C5Cp00843C |
0.381 |
|
| 2015 |
Hultqvist A, Li JV, Kuciauskas D, Dippo P, Contreras MA, Levi DH, Bent SF. Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers Applied Physics Letters. 107. DOI: 10.1063/1.4927096 |
0.355 |
|
| 2015 |
Pickrahn KL, Garg A, Bent SF. ALD of ultrathin ternary oxide electrocatalysts for water splitting Acs Catalysis. 5: 1609-1616. DOI: 10.1021/Cs501532B |
0.371 |
|
| 2015 |
Lee HBR, Bent SF. Formation of Continuous Pt Films on the Graphite Surface by Atomic Layer Deposition with Reactive O3 Chemistry of Materials. 27: 6802-6809. DOI: 10.1021/Acs.Chemmater.5B03076 |
0.382 |
|
| 2015 |
Shong B, Hellstern TR, Bent SF. Adsorption of heterobifunctional 4-nitrophenol on the Ge(100)-2×1 surface Surface Science. DOI: 10.1016/J.Susc.2015.04.007 |
0.373 |
|
| 2015 |
Herron SM, Lawal QO, Bent SF. Polysulfide ligand exchange on zinc sulfide nanocrystal surfaces for improved film formation Applied Surface Science. 359: 106-113. DOI: 10.1016/J.Apsusc.2015.10.059 |
0.343 |
|
| 2015 |
Nardi KL, Yang N, Dickens CF, Strickler AL, Bent SF. Creating Highly Active Atomic Layer Deposited NiO Electrocatalysts for the Oxygen Evolution Reaction Advanced Energy Materials. DOI: 10.1002/Aenm.201500412 |
0.405 |
|
| 2014 |
Roelofs KE, Brennan TP, Bent SF. Interface Engineering in Inorganic-Absorber Nanostructured Solar Cells. The Journal of Physical Chemistry Letters. 5: 348-60. PMID 26270710 DOI: 10.1021/Jz4023656 |
0.34 |
|
| 2014 |
Prasittichai C, Pickrahn KL, Hashemi FS, Bergsman DS, Bent SF. Improving area-selective molecular layer deposition by selective SAM removal. Acs Applied Materials & Interfaces. 6: 17831-6. PMID 25290370 DOI: 10.1021/Am504441E |
0.781 |
|
| 2014 |
Viswanathan V, Pickrahn KL, Luntz AC, Bent SF, Nørskov JK. Nanoscale limitations in metal oxide electrocatalysts for oxygen evolution. Nano Letters. 14: 5853-7. PMID 25216362 DOI: 10.1021/Nl502775U |
0.351 |
|
| 2014 |
Kim K, Lee HB, Johnson RW, Tanskanen JT, Liu N, Kim MG, Pang C, Ahn C, Bent SF, Bao Z. Selective metal deposition at graphene line defects by atomic layer deposition. Nature Communications. 5: 4781. PMID 25179368 DOI: 10.1038/Ncomms5781 |
0.321 |
|
| 2014 |
Geyer SM, Methaapanon R, Johnson RW, Kim WH, Van Campen DG, Metha A, Bent SF. An atomic layer deposition chamber for in situ x-ray diffraction and scattering analysis. The Review of Scientific Instruments. 85: 055116. PMID 24880424 DOI: 10.1063/1.4876484 |
0.611 |
|
| 2014 |
Shong B, Wong KT, Bent SF. Strong carbon-surface dative bond formation by tert-butyl isocyanide on the Ge(100)-2 × 1 surface. Journal of the American Chemical Society. 136: 5848-51. PMID 24725248 DOI: 10.1021/Ja500742A |
0.394 |
|
| 2014 |
Wangperawong A, Hsu PC, Yee Y, Herron SM, Clemens BM, Cui Y, Bent SF. Bifacial solar cell with SnS absorber by vapor transport deposition Applied Physics Letters. 105. DOI: 10.1063/1.4898092 |
0.337 |
|
| 2014 |
Geyer SM, Methaapanon R, Johnson R, Brennan S, Toney MF, Clemens B, Bent S. Structural evolution of platinum thin films grown by atomic layer deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4892104 |
0.625 |
|
| 2014 |
Shong B, Brogaard RY, Sandoval TE, Bent SF. Coverage-dependent adsorption of bifunctional molecules: Detailed insights into interactions between adsorbates Journal of Physical Chemistry C. 118: 23811-23820. DOI: 10.1021/Jp507349K |
0.393 |
|
| 2014 |
Shong B, Bent SF. Thermally activated reactions of nitrobenzene at the Ge(100)-2 × 1 Surface Journal of Physical Chemistry C. 118: 29224-29233. DOI: 10.1021/Jp505352K |
0.434 |
|
| 2014 |
Hashemi FSM, Prasittichai C, Bent SF. A new resist for area selective atomic and molecular layer deposition on metal-dielectric patterns Journal of Physical Chemistry C. 118: 10957-10962. DOI: 10.1021/Jp502669F |
0.771 |
|
| 2014 |
Lee HBR, Pickrahn KL, Bent SF. Effect of O3 on growth of pt by atomic layer deposition Journal of Physical Chemistry C. 118: 12325-12332. DOI: 10.1021/Jp502596N |
0.314 |
|
| 2014 |
Herron SM, Tanskanen JT, Roelofs KE, Bent SF. Highly textured tin(II) sulfide thin films formed from sheetlike nanocrystal inks Chemistry of Materials. 26: 7106-7113. DOI: 10.1021/Cm503666Y |
0.375 |
|
| 2014 |
Tanskanen JT, Hägglund C, Bent SF. Correlating growth characteristics in atomic layer deposition with precursor molecular structure: The case of zinc tin oxide Chemistry of Materials. 26: 2795-2802. DOI: 10.1021/Cm403913R |
0.411 |
|
| 2014 |
Prasittichai C, Pickrahn KL, Minaye Hashemi FS, Bergsman DS, Bent SF. Improving area-selective molecular layer deposition by selective SAM removal Acs Applied Materials and Interfaces. 6: 17831-17836. DOI: 10.1021/am504441e |
0.731 |
|
| 2014 |
Mullings MN, Hägglund C, Tanskanen JT, Yee Y, Geyer S, Bent SF. Thin film characterization of zinc tin oxide deposited by thermal atomic layer deposition Thin Solid Films. 556: 186-194. DOI: 10.1016/J.Tsf.2014.01.068 |
0.646 |
|
| 2014 |
Johnson RW, Hultqvist A, Bent SF. A brief review of atomic layer deposition: From fundamentals to applications Materials Today. 17: 236-246. DOI: 10.1016/J.Mattod.2014.04.026 |
0.394 |
|
| 2013 |
Geyer SM, Methaapanon R, Shong B, Pianetta PA, Bent SF. In Vacuo Photoemission Studies of Platinum Atomic Layer Deposition Using Synchrotron Radiation. The Journal of Physical Chemistry Letters. 4: 176-9. PMID 26291229 DOI: 10.1021/Jz301475Z |
0.63 |
|
| 2013 |
Wong KT, Tanskanen JT, Bent SF. Formation of stable nitrene surface species by the reaction of adsorbed phenyl isocyanate at the Ge(100)-2 × 1 surface. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 15842-50. PMID 24359033 DOI: 10.1021/La4036216 |
0.436 |
|
| 2013 |
Prasittichai C, Zhou H, Bent SF. Area selective molecular layer deposition of polyurea films. Acs Applied Materials & Interfaces. 5: 13391-6. PMID 24229350 DOI: 10.1021/Am4043195 |
0.785 |
|
| 2013 |
Hägglund C, Zeltzer G, Ruiz R, Thomann I, Lee HBR, Brongersma ML, Bent SF. Self-assembly based plasmonic arrays tuned by atomic layer deposition for extreme visible light absorption Nano Letters. 13: 3352-3357. PMID 23805835 DOI: 10.1021/Nl401641V |
0.34 |
|
| 2013 |
Zhou H, Blackwell JM, Lee HBR, Bent SF. Highly sensitive, patternable organic films at the nanoscale made by bottom-up assembly Acs Applied Materials and Interfaces. 5: 3691-3696. PMID 23594160 DOI: 10.1021/Am4002887 |
0.396 |
|
| 2013 |
Methaapanon R, Geyer SM, Hagglund C, Pianetta PA, Bent SF. Portable atomic layer deposition reactor for in situ synchrotron photoemission studies. The Review of Scientific Instruments. 84: 015104. PMID 23387692 DOI: 10.1063/1.4773230 |
0.606 |
|
| 2013 |
Lee HB, Baeck SH, Jaramillo TF, Bent SF. Growth of Pt nanowires by atomic layer deposition on highly ordered pyrolytic graphite. Nano Letters. 13: 457-63. PMID 23317031 DOI: 10.1021/Nl303803P |
0.329 |
|
| 2013 |
Zhou H, Bent SF. Novel photoresist thin films with in-situ photoacid generator by molecular layer deposition Proceedings of Spie - the International Society For Optical Engineering. 8682. DOI: 10.1117/12.2011572 |
0.395 |
|
| 2013 |
Mullings MN, Hägglund C, Bent SF. Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4812717 |
0.425 |
|
| 2013 |
Teplyakov AV, Bent SF. Semiconductor surface functionalization for advances in electronics, energy conversion, and dynamic systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4810784 |
0.614 |
|
| 2013 |
Zhou H, Bent SF. Fabrication of organic interfacial layers by molecular layer deposition: Present status and future opportunities Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4804609 |
0.36 |
|
| 2013 |
Wangperawong A, Herron SM, Runser RR, Hägglund C, Tanskanen JT, Lee HBR, Clemens BM, Bent SF. Vapor transport deposition and epitaxy of orthorhombic SnS on glass and NaCl substrates Applied Physics Letters. 103. DOI: 10.1063/1.4816746 |
0.374 |
|
| 2013 |
Zhou H, Toney MF, Bent SF. Cross-linked ultrathin polyurea films via molecular layer deposition Macromolecules. 46: 5638-5643. DOI: 10.1021/Ma400998M |
0.386 |
|
| 2013 |
Geyer SM, Methaapanon R, Shong B, Pianetta PA, Bent SF. In vacuo photoemission studies of platinum atomic layer deposition using synchrotron radiation Journal of Physical Chemistry Letters. 4: 176-179. DOI: 10.1021/jz301475z |
0.548 |
|
| 2013 |
Wong KT, Shong B, Sun W, Bent SF. Adsorption of trimethyl phosphite at the Ge(100)-2 × 1 surface by nucleophilic reaction Journal of Physical Chemistry C. 117: 26628-26635. DOI: 10.1021/Jp408538E |
0.442 |
|
| 2013 |
Brennan TP, Tanskanen JT, Roelofs KE, To JWF, Nguyen WH, Bakke JR, Ding IK, Hardin BE, Sellinger A, McGehee MD, Bent SF. TiO2 conduction band modulation with In2O3 recombination barrier layers in solid-state dye-sensitized solar cells Journal of Physical Chemistry C. 117: 24138-24149. DOI: 10.1021/Jp406789K |
0.306 |
|
| 2013 |
Wong KT, Bent SF. Adsorption of structural and stereoisomers of cyclohexanediamine at the ge(100)-2 × 1 surface: Geometric effects in adsorption on a semiconductor surface Journal of Physical Chemistry C. 117: 19063-19073. DOI: 10.1021/Jp406423N |
0.418 |
|
| 2013 |
Tanskanen JT, Bent SF. Insights into the surface chemistry of tin oxide atomic layer deposition from quantum chemical calculations Journal of Physical Chemistry C. 117: 19056-19062. DOI: 10.1021/Jp4063324 |
0.439 |
|
| 2013 |
Zhou H, Bent SF. Highly stable ultrathin carbosiloxane films by molecular layer deposition Journal of Physical Chemistry C. 117: 19967-19973. DOI: 10.1021/Jp4058725 |
0.402 |
|
| 2013 |
Roelofs KE, Brennan TP, Dominguez JC, Bailie CD, Margulis GY, Hoke ET, McGehee MD, Bent SF. Effect of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state CdS quantum dot-sensitized solar cells Journal of Physical Chemistry C. 117: 5584-5592. DOI: 10.1021/Jp311846R |
0.319 |
|
| 2013 |
Shong B, Bent SF. One-dimensional pattern formation of adsorbed molecules on the Ge(100)-2 × 1 surface driven by nearest-neighbor effects Journal of Physical Chemistry C. 117: 949-955. DOI: 10.1021/Jp3078503 |
0.376 |
|
| 2013 |
Brennan TP, Tanskanen JT, Bakke JR, Nguyen WH, Nordlund D, Toney MF, McGehee MD, Sellinger A, Bent SF. Dynamical orientation of large molecules on oxide surfaces and its implications for dye-sensitized solar cells Chemistry of Materials. 25: 4354-4363. DOI: 10.1021/Cm402609K |
0.322 |
|
| 2013 |
Methaapanon R, Geyer SM, Brennan S, Bent SF. Size dependent effects in nucleation of Ru and Ru oxide thin films by atomic layer deposition measured by synchrotron radiation X-ray diffraction Chemistry of Materials. 25: 3458-3463. DOI: 10.1021/Cm401585K |
0.62 |
|
| 2013 |
Prasittichai C, Zhou H, Bent SF. Area selective molecular layer deposition of polyurea films Acs Applied Materials and Interfaces. 5: 13391-13396. DOI: 10.1021/am4043195 |
0.755 |
|
| 2013 |
Bakke JR, Hägglund C, Jung HJ, Sinclair R, Bent SF. Atomic layer deposition of CdO and CdxZn1-xO films Materials Chemistry and Physics. 140: 465-471. DOI: 10.1016/J.Matchemphys.2013.03.038 |
0.38 |
|
| 2012 |
Brennan TP, Bakke JR, Ding IK, Hardin BE, Nguyen WH, Mondal R, Bailie CD, Margulis GY, Hoke ET, Sellinger A, McGehee MD, Bent SF. The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells. Physical Chemistry Chemical Physics : Pccp. 14: 12130-40. PMID 22850593 DOI: 10.1039/C2Cp42388J |
0.332 |
|
| 2012 |
Bakke JR, Tanskanen JT, Hägglund C, Pakkanen TA, Bent SF. Growth characteristics, material properties, and optical properties of zinc oxysulfide films deposited by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3664758 |
0.381 |
|
| 2012 |
Methaapanon R, Geyer SM, Lee HBR, Bent SF. The low temperature atomic layer deposition of ruthenium and the effect of oxygen exposure Journal of Materials Chemistry. 22: 25154-25160. DOI: 10.1039/C2Jm35332F |
0.618 |
|
| 2012 |
Wong KT, Chopra SN, Bent SF. Dissociative adsorption of dimethyl sulfoxide at the Ge(100)-2 × 1 surface Journal of Physical Chemistry C. 116: 26422-26430. DOI: 10.1021/Jp309418E |
0.436 |
|
| 2012 |
Wong KT, Chopra SN, Bent SF. Single versus dual attachment in the adsorption of diisocyanates at the Ge(100)-2 × 1 surface Journal of Physical Chemistry C. 116: 12670-12679. DOI: 10.1021/Jp302930G |
0.449 |
|
| 2012 |
Shong B, Bent SF. Transition in the molecular orientation of phenol adsorbates on the Ge(100)-2 × 1 surface Journal of Physical Chemistry C. 116: 7925-7930. DOI: 10.1021/Jp3009767 |
0.366 |
|
| 2012 |
Shong B, Wong KT, Bent SF. Reaction of hydroquinone and p-benzoquinone with the Ge(100)-2 × 1 Surface Journal of Physical Chemistry C. 116: 4705-4713. DOI: 10.1021/Jp210804V |
0.408 |
|
| 2012 |
Lee HBR, Mullings MN, Jiang X, Clemens BM, Bent SF. Nucleation-controlled growth of nanoparticles by atomic layer deposition Chemistry of Materials. 24: 4051-4059. DOI: 10.1021/Cm3014978 |
0.596 |
|
| 2012 |
Lee HBR, Bent SF. Microstructure-dependent nucleation in atomic layer deposition of Pt on TiO 2 Chemistry of Materials. 24: 279-286. DOI: 10.1021/Cm202764B |
0.359 |
|
| 2012 |
Pickrahn KL, Park SW, Gorlin Y, Lee HBR, Jaramillo TF, Bent SF. Active MnO x electrocatalysts prepared by atomic layer deposition for oxygen evolution and oxygen reduction reactions Advanced Energy Materials. 2: 1269-1277. DOI: 10.1002/Aenm.201200230 |
0.403 |
|
| 2011 |
Bakke JR, Pickrahn KL, Brennan TP, Bent SF. Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition Nanoscale. 3: 3482-3508. PMID 21799978 DOI: 10.1039/C1Nr10349K |
0.389 |
|
| 2011 |
Zhou H, Bent SF. Molecular layer deposition of functional thin films for advanced lithographic patterning. Acs Applied Materials & Interfaces. 3: 505-11. PMID 21302918 DOI: 10.1021/Am1010805 |
0.418 |
|
| 2011 |
Ardalan P, Brennan TP, Lee HB, Bakke JR, Ding IK, McGehee MD, Bent SF. Effects of self-assembled monolayers on solid-state CdS quantum dot sensitized solar cells. Acs Nano. 5: 1495-504. PMID 21299223 DOI: 10.1021/Nn103371V |
0.307 |
|
| 2011 |
Kachian JS, Tannaci J, Wright RJ, Tilley TD, Bent SF. Disulfide passivation of the Ge(100)-2 × 1 surface. Langmuir : the Acs Journal of Surfaces and Colloids. 27: 179-86. PMID 21141841 DOI: 10.1021/La103614F |
0.419 |
|
| 2011 |
Bent SF, Kachian JS, Rodríguez-Reyes JCF, Teplyakov AV. Tuning the reactivity of semiconductor surfaces by functionalization with amines of different basicity Proceedings of the National Academy of Sciences of the United States of America. 108: 956-960. PMID 21068370 DOI: 10.1073/Pnas.1006656107 |
0.648 |
|
| 2011 |
Tanskanen JT, Bakke JR, Pakkanen TA, Bent SF. Influence of organozinc ligand design on growth and material properties of ZnS and ZnO deposited by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3572232 |
0.389 |
|
| 2011 |
Bakke JR, Tanskanen JT, Jung HJ, Sinclair R, Bent SF. Atomic layer deposition of CdxZn1-xS films Journal of Materials Chemistry. 21: 743-751. DOI: 10.1039/C0Jm02786C |
0.399 |
|
| 2011 |
Wangperawong A, King JS, Herron SM, Tran BP, Pangan-Okimoto K, Bent SF. Aqueous bath process for deposition of Cu2ZnSnS4 photovoltaic absorbers Thin Solid Films. 519: 2488-2492. DOI: 10.1016/J.Tsf.2010.11.040 |
0.38 |
|
| 2011 |
Kachian JS, Jung SJ, Kim S, Bent SF. Coverage dependence of glycine adsorption on the Ge(100) - 2 × 1 surface Surface Science. 605: 760-769. DOI: 10.1016/J.Susc.2011.01.015 |
0.428 |
|
| 2011 |
Loscutoff PW, Zhou H, Clendenning S, Bent SF. Molecular layer deposition of nanoscale organic films for copper diffusion barriers Advanced Metallization Conference (Amc). 10-11. |
0.797 |
|
| 2010 |
Tanskanen JT, Bakke JR, Bent SF, Pakkanen TA. ALD growth characteristics of ZnS films deposited from organozinc and hydrogen sulfide precursors. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 11899-906. PMID 20553010 DOI: 10.1021/La101128W |
0.445 |
|
| 2010 |
Ardalan P, Sun Y, Pianetta P, Musgrave CB, Bent SF. Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 8419-29. PMID 20433151 DOI: 10.1021/La904864C |
0.636 |
|
| 2010 |
Kachian JS, Wong KT, Bent SF. Periodic trends in organic functionalization of group IV semiconductor surfaces. Accounts of Chemical Research. 43: 346-55. PMID 20041705 DOI: 10.1021/Ar900251S |
0.4 |
|
| 2010 |
Loscutoff PW, Zhou H, Clendenning SB, Bent SF. Formation of organic nanoscale laminates and blends by molecular layer deposition. Acs Nano. 4: 331-41. PMID 20000603 DOI: 10.1021/Nn901013R |
0.807 |
|
| 2010 |
Loscutoff PW, Clendenning SB, Bent SF. Fabrication of organic thin films for copper diffusion barrier layers using molecular layer deposition Materials Research Society Symposium Proceedings. 1249: 189-194. DOI: 10.1557/Proc-1249-F02-03 |
0.806 |
|
| 2010 |
Mullings MN, Lee HBR, Marchack N, Jiang X, Chen Z, Gorlin Y, Lin KP, Bent SF. Area selective atomic layer deposition by microcontact printing with a water-soluble polymer Journal of the Electrochemical Society. 157: D600-D604. DOI: 10.1149/1.3491376 |
0.58 |
|
| 2010 |
Shim JH, Jiang X, Bent SF, Prinz FB. Catalysts with Pt surface coating by atomic layer deposition for solid oxide fuel cells Journal of the Electrochemical Society. 157: B793-B797. DOI: 10.1149/1.3368787 |
0.616 |
|
| 2010 |
Jiang X, Gür TM, Prinz FB, Bent SF. Sputtered Pt-Ru alloys as catalysts for highly concentrated methanol oxidation Journal of the Electrochemical Society. 157: B314-B319. DOI: 10.1149/1.3273081 |
0.602 |
|
| 2010 |
Kachian JS, Bent SF. Adsorption behavior of bifunctional molecules on Ge(100)-2 × 1: Comparison of mercaptoethanol and mercaptamine Journal of Physical Chemistry C. 114: 22230-22236. DOI: 10.1021/Jp1085894 |
0.369 |
|
| 2010 |
Tanskanen JT, Bakke JR, Bent SF, Pakkanen TA. Molecular level insights into atomic layer deposition of CdS by quantum chemical calculations Journal of Physical Chemistry C. 114: 16618-16624. DOI: 10.1021/Jp105911P |
0.426 |
|
| 2010 |
Loscutoff PW, Wong KT, Bent SF. Reaction of phenyl isocyanate and phenyl isothiocyanate with the Ge(100)-2 × 1 surface Journal of Physical Chemistry C. 114: 14193-14201. DOI: 10.1021/Jp104388A |
0.803 |
|
| 2010 |
Methaapanon R, Bent SF. Comparative study of titanium dioxide atomic layer deposition on silicon dioxide and hydrogen-terminated silicon Journal of Physical Chemistry C. 114: 10498-10504. DOI: 10.1021/Jp1013303 |
0.463 |
|
| 2010 |
Jiang X, Gür TM, Prinz FB, Bent SF. Atomic layer deposition (ALD) Co-deposited Pt-Ru binary and Pt skin catalysts for concentrated methanol oxidation Chemistry of Materials. 22: 3024-3032. DOI: 10.1021/Cm902904U |
0.595 |
|
| 2010 |
Loscutoff PW, Lee HBR, Bent SF. Deposition of ultrathin polythiourea films by molecular layer deposition Chemistry of Materials. 22: 5563-5569. DOI: 10.1021/Cm1016239 |
0.816 |
|
| 2010 |
Bakke JR, Jung HJ, Tanskanen JT, Sinclair R, Bent SF. Atomic layer deposition of CdS films Chemistry of Materials. 22: 4669-4678. DOI: 10.1021/Cm100874F |
0.374 |
|
| 2010 |
Bakke JR, King JS, Jung HJ, Sinclair R, Bent SF. Atomic layer deposition of ZnS via in situ production of H2S Thin Solid Films. 518: 5400-5408. DOI: 10.1016/J.Tsf.2010.03.074 |
0.391 |
|
| 2010 |
Loscutoff PW, Wong KT, Bent SF. Reaction of tert-butyl isocyanate and tert-butyl isothiocyanate at the Ge(100)-2×1 surface Surface Science. 604: 1791-1799. DOI: 10.1016/J.Susc.2010.07.007 |
0.812 |
|
| 2009 |
ter Maat J, Regeling R, Yang M, Mullings MN, Bent SF, Zuilhof H. Photochemical covalent attachment of alkene-derived monolayers onto hydroxyl-terminated silica. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 11592-7. PMID 19583192 DOI: 10.1021/La901551T |
0.455 |
|
| 2009 |
Kachian JS, Bent SF. Sulfur versus oxygen reactivity of organic molecules at the Ge(100)-2 x 1 surface. Journal of the American Chemical Society. 131: 7005-15. PMID 19413324 DOI: 10.1021/Ja808066T |
0.363 |
|
| 2009 |
Ardalan P, Musgrave CB, Bent SF. Formation of alkanethiolate self-assembled monolayers at halide-terminated Ge surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 2013-25. PMID 19152272 DOI: 10.1021/La803468E |
0.62 |
|
| 2009 |
Jiang X, Bent SF. Area-selective ALD with soft lithographic methods: Using self-assembled monolayers to direct film deposition Journal of Physical Chemistry C. 113: 17613-17625. DOI: 10.1021/Jp905317N |
0.621 |
|
| 2009 |
Ghosal S, Baumann TF, King JS, Kucheyev SO, WAng Y, Worsley MA, Biener J, Bent SF, Hamza AV. Controlling atomic layer deposition of tio2 in aerogels through surface functionalization Chemistry of Materials. 21: 1989-1992. DOI: 10.1021/Cm900636S |
0.629 |
|
| 2009 |
Zaharias GA, Bent SF. Growth process of polyaniline thin films formed by hot wire CVD Chemical Vapor Deposition. 15: 133-141. DOI: 10.1002/Cvde.200806743 |
0.814 |
|
| 2009 |
Ardalan P, Musgrave CB, Bent SF. Effects of surface functionalization on titanium dioxide atomic layer deposition on Ge surfaces Ecs Transactions. 25: 131-139. |
0.594 |
|
| 2008 |
Bent SF. Surface patterning: Silicon falls into line. Nature Nanotechnology. 3: 185-6. PMID 18654496 DOI: 10.1038/Nnano.2008.79 |
0.318 |
|
| 2008 |
King JS, Wittstock A, Biener J, Kucheyev SO, Wang YM, Baumann TF, Giri SK, Hamza AV, Baeumer M, Bent SF. Ultralow loading Pt nanocatalysts prepared by atomic layer deposition on carbon aerogels. Nano Letters. 8: 2405-9. PMID 18636780 DOI: 10.1021/Nl801299Z |
0.336 |
|
| 2008 |
Ardalan P, Pickett ER, Harris JS, Marshall AF, Bent SF. Formation of an oxide-free GeTiO2 interface by atomic layer deposition on brominated Ge Applied Physics Letters. 92. DOI: 10.1063/1.2951608 |
0.417 |
|
| 2008 |
Jiang X, Huang H, Prinz FB, Bent SF. Application of atomic layer deposite of platinum to solid oxide fuel cells Chemistry of Materials. 20: 3897-3905. DOI: 10.1021/Cm7033189 |
0.601 |
|
| 2008 |
Fuller NCM, Worsley MA, Tai L, Bent S, Labelle C, Arnold J, Dalton T. Plasma ash processing solutions for advanced interconnect technology Thin Solid Films. 516: 3558-3563. DOI: 10.1016/J.Tsf.2007.08.071 |
0.574 |
|
| 2007 |
Bent SF. Heads or tails: which is more important in molecular self-assembly? Acs Nano. 1: 10-2. PMID 19203125 DOI: 10.1021/Nn700118K |
0.305 |
|
| 2007 |
Mehenti NZ, Fishman HA, Bent SF. A model neural interface based on functional chemical stimulation. Biomedical Microdevices. 9: 579-86. PMID 17520371 DOI: 10.1007/S10544-007-9069-Z |
0.76 |
|
| 2007 |
Lee CJ, Fishman HA, Bent SF. Spatial cues for the enhancement of retinal pigment epithelial cell function in potential transplants. Biomaterials. 28: 2192-201. PMID 17267030 DOI: 10.1016/J.Biomaterials.2007.01.018 |
0.484 |
|
| 2007 |
Hong J, Porter DW, Sreenivasan R, McIntyre PC, Bent SF. ALD resist formed by vapor-deposited self-assembled monolayers. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 1160-5. PMID 17241027 DOI: 10.1021/La0606401 |
0.698 |
|
| 2007 |
Lu JT, Lee CJ, Bent SF, Fishman HA, Sabelman EE. Thin collagen film scaffolds for retinal epithelial cell culture. Biomaterials. 28: 1486-94. PMID 17161864 DOI: 10.1016/J.Biomaterials.2006.11.023 |
0.54 |
|
| 2007 |
Jiang X, Bent SF. Area-selective atomic layer deposition of platinum on YSZ substrates using microcontact printed SAMs Journal of the Electrochemical Society. 154: D648-D656. DOI: 10.1149/1.2789301 |
0.663 |
|
| 2007 |
Worsley MA, Bent SF, Fuller NCM, Tai TL, Doyle J, Rothwell M, Dalton T. Effect of radical species density and ion bombardment during ashing of extreme ultralow- κ interlevel dielectric materials Journal of Applied Physics. 101. DOI: 10.1063/1.2405123 |
0.549 |
|
| 2007 |
Keung AJ, Filler MA, Bent SF. Thermal control of amide product distributions at the Ge(100)-2×1 surface Journal of Physical Chemistry C. 111: 411-419. DOI: 10.1021/Jp065278D |
0.691 |
|
| 2007 |
Filler MA, Musgrave CB, Bent SF. Carbon-oxygen coupling in the reaction of formaldehyde on Ge(100)-2×1 Journal of Physical Chemistry C. 111: 1739-1746. DOI: 10.1021/Jp064820V |
0.763 |
|
| 2007 |
Jiang X, Chen R, Bent SF. Spatial control over atomic layer deposition using microcontact-printed resists Surface and Coatings Technology. 201: 8799-8807. DOI: 10.1016/J.Surfcoat.2007.04.126 |
0.65 |
|
| 2006 |
Mehenti NZ, Tsien GS, Leng T, Fishman HA, Bent SF. A model retinal interface based on directed neuronal growth for single cell stimulation. Biomedical Microdevices. 8: 141-50. PMID 16688573 DOI: 10.1007/S10544-006-7709-3 |
0.756 |
|
| 2006 |
Loscutoff PW, Bent SF. Reactivity of the germanium surface: Chemical passivation and functionalization. Annual Review of Physical Chemistry. 57: 467-95. PMID 16599818 DOI: 10.1146/Annurev.Physchem.56.092503.141307 |
0.804 |
|
| 2006 |
Filler MA, Keung AJ, Porter DW, Bent SF. Formation of surface-bound acyl groups by reaction of acyl halides on ge(100)-2x1. The Journal of Physical Chemistry. B. 110: 4115-24. PMID 16509705 DOI: 10.1021/Jp055685+ |
0.695 |
|
| 2006 |
Filler MA, Van Deventer JA, Keung AJ, Bent SF. Carboxylic acid chemistry at the Ge(100)-2 x 1 interface: bidentate bridging structure formation on a semiconductor surface. Journal of the American Chemical Society. 128: 770-9. PMID 16417366 DOI: 10.1021/Ja0549502 |
0.691 |
|
| 2006 |
Lee CJ, Vroom JA, Fishman HA, Bent SF. Determination of human lens capsule permeability and its feasibility as a replacement for Bruch's membrane. Biomaterials. 27: 1670-8. PMID 16199085 DOI: 10.1016/J.Biomaterials.2005.09.008 |
0.458 |
|
| 2006 |
Chen R, Porter DW, Kim H, Mcintyre PC, Bent SF. Area selective atomic layer deposition by soft lithography Materials Research Society Symposium Proceedings. 917: 161-166. DOI: 10.1557/Proc-0917-E11-05 |
0.346 |
|
| 2006 |
Zaharias GA, Duan HL, Bent SF. Detecting free radicals during the hot wire chemical vapor deposition of amorphous silicon carbide films using single-source precursors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 542-549. DOI: 10.1116/1.2194023 |
0.814 |
|
| 2006 |
Worsley MA, Bent SF, Fuller NCM, Dalton T. Characterization of neutral species densities in dual frequency capacitively coupled photoresist ash plasmas by optical emission actinometry Journal of Applied Physics. 100. DOI: 10.1063/1.2358303 |
0.546 |
|
| 2006 |
Chen K, Bent SF. Highly stable monolayer resists for atomic layer deposition on germanium and silicon Chemistry of Materials. 18: 3733-3741. DOI: 10.1021/Cm0607785 |
0.431 |
|
| 2006 |
Zaharias GA, Shi HH, Bent SF. Characterization of polyconjugated thin films synthesized by hot-wire chemical vapor deposition of aniline Thin Solid Films. 501: 341-345. DOI: 10.1016/J.Tsf.2005.07.145 |
0.806 |
|
| 2006 |
Chen R, Bent SF. Chemistry for positive pattern transfer using area-selective atomic layer deposition Advanced Materials. 18: 1086-1090. DOI: 10.1002/Adma.200502470 |
0.334 |
|
| 2005 |
Kim A, Filler MA, Kim S, Bent SF. Ethylenediamine on Ge(100)-2 x 1: the role of interdimer interactions. The Journal of Physical Chemistry. B. 109: 19817-22. PMID 16853562 DOI: 10.1021/Jp054340O |
0.696 |
|
| 2005 |
Kim A, Filler MA, Kim S, Bent SF. Layer-by-layer growth on Ge(100) via spontaneous urea coupling reactions. Journal of the American Chemical Society. 127: 6123-32. PMID 15839714 DOI: 10.1021/Ja042751X |
0.723 |
|
| 2005 |
Worsley MA, Bent SF, Gates SM, Fuller NCM, Volksen W, Steen M, Dalton T. Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 395-405. DOI: 10.1116/1.1861038 |
0.612 |
|
| 2005 |
Chen R, Kim H, McIntyre PC, Porter DW, Bent SF. Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922076 |
0.413 |
|
| 2005 |
Chen R, Kim H, McIntyre PC, Bent SF. Investigation of self-assembled monolayer resists for hafnium dioxide atomic layer deposition Chemistry of Materials. 17: 536-544. DOI: 10.1021/Cm0486666 |
0.366 |
|
| 2005 |
Duan HL, Bent SF. The influence of filament material on radical production in hot wire chemical vapor deposition of a-Si:H Thin Solid Films. 485: 126-134. DOI: 10.1016/J.Tsf.2005.03.038 |
0.451 |
|
| 2005 |
Keung AJ, Filler MA, Porter DW, Bent SF. Tertiary amide chemistry at the Ge(1 0 0)-2 × 1 surface Surface Science. 599: 41-54. DOI: 10.1016/J.Susc.2005.09.035 |
0.693 |
|
| 2005 |
Worsley MA, Roberts M, Bent SF, Gates SM, Shaw T, Volksen W, Miller R. Detection of open or closed porosity in low-κ dielectrics by solvent diffusion Microelectronic Engineering. 82: 113-118. DOI: 10.1016/J.Mee.2005.06.007 |
0.543 |
|
| 2004 |
Mui C, Bent SF, Musgrave CB. A Density Functional Theory Study on the Effect of Ge Alloying on Hydrogen Desorption from SiGe Alloy Surfaces. The Journal of Physical Chemistry. B. 108: 6336-50. PMID 18950120 DOI: 10.1021/Jp037948A |
0.795 |
|
| 2004 |
Lee CJ, Blumenkranz MS, Fishman HA, Bent SF. Controlling cell adhesion on human tissue by soft lithography. Langmuir : the Acs Journal of Surfaces and Colloids. 20: 4155-61. PMID 15969410 DOI: 10.1021/La035467C |
0.492 |
|
| 2004 |
Leng T, Wu P, Mehenti NZ, Bent SF, Marmor MF, Blumenkranz MS, Fishman HA. Directed retinal nerve cell growth for use in a retinal prosthesis interface. Investigative Ophthalmology & Visual Science. 45: 4132-7. PMID 15505066 DOI: 10.1167/Iovs.03-1335 |
0.76 |
|
| 2004 |
Zaharias GA, Shi HH, Bent SF. Hot wire chemical vapor deposition as a novel synthetic method for electroactive organic thin films Materials Research Society Symposium Proceedings. 814: 361-366. DOI: 10.1557/Proc-814-I12.9 |
0.798 |
|
| 2004 |
Chen R, Kim H, McIntyre PC, Bent SF. Controlling area-selective atomic layer deposition of HfO 2 dielectric by self-assembled monolayers Materials Research Society Symposium Proceedings. 811: 57-62. DOI: 10.1557/Proc-811-D3.3 |
0.341 |
|
| 2004 |
Mehenti NZ, Fishman HA, Bent SF. Pushing the limits of artificial vision Ieee Potentials. 23: 21-23. DOI: 10.1109/Mp.2004.1266935 |
0.755 |
|
| 2004 |
Chen R, Kim H, McIntyre PC, Bent SF. Self-assembled monolayer resist for atomic layer deposition of HfO 2 and ZrO 2 high-κ gate dielectrics Applied Physics Letters. 84: 4017-4019. DOI: 10.1063/1.1751211 |
0.418 |
|
| 2004 |
Mui C, Bent SF, Musgrave CB. Quantum chemistry based statistical mechanical model of hydrogen desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe alloy surfaces Journal of Physical Chemistry B. 108: 18243-18253. DOI: 10.1021/Jp0379493 |
0.806 |
|
| 2003 |
Peterman MC, Mehenti NZ, Bilbao KV, Lee CJ, Leng T, Noolandi J, Bent SF, Blumenkranz MS, Fishman HA. The Artificial Synapse Chip: a flexible retinal interface based on directed retinal cell growth and neurotransmitter stimulation. Artificial Organs. 27: 975-85. PMID 14616516 DOI: 10.1046/J.1525-1594.2003.07307.X |
0.762 |
|
| 2003 |
Peterman MC, Bloom DM, Lee C, Bent SF, Marmor MF, Blumenkranz MS, Fishman HA. Localized neurotransmitter release for use in a prototype retinal interface. Investigative Ophthalmology & Visual Science. 44: 3144-9. PMID 12824264 DOI: 10.1167/Iovs.02-1097 |
0.491 |
|
| 2003 |
Filler MA, Mui C, Musgrave CB, Bent SF. Competition and selectivity in the reaction of nitriles on ge(100)-2x1. Journal of the American Chemical Society. 125: 4928-36. PMID 12696912 DOI: 10.1021/Ja027887E |
0.802 |
|
| 2003 |
Mui C, Filler MA, Bent SF, Musgrave CB. Reactions of nitriles at semiconductor surfaces Journal of Physical Chemistry B. 107: 12256-12267. DOI: 10.1021/Jp034864T |
0.811 |
|
| 2003 |
Wang GT, Mui C, Tannaci JF, Filler MA, Musgrave CB, Bent SF. Reactions of cyclic aliphatic and aromatic amines on Ge(100)-2×1 and Si(100)-2×1 Journal of Physical Chemistry B. 107: 4982-4996. DOI: 10.1021/Jp026864J |
0.809 |
|
| 2003 |
Filler MA, Bent SF. The surface as molecular reagent: Organic chemistry at the semiconductor interface Progress in Surface Science. 73. DOI: 10.1016/S0079-6816(03)00035-2 |
0.696 |
|
| 2003 |
Worsley MA, Bent SF, Gates SM, Kumar K, Dalton T, Hedrick JC. The study of modified layers in SiCOH dielectrics using spectroscopic ellipsometry Materials Research Society Symposium - Proceedings. 766: 235-239. |
0.524 |
|
| 2002 |
Lee CJ, Huie P, Leng T, Peterman MC, Marmor MF, Blumenkranz MS, Bent SF, Fishman HA. Microcontact printing on human tissue for retinal cell transplantation. Archives of Ophthalmology (Chicago, Ill. : 1960). 120: 1714-8. PMID 12470147 DOI: 10.1001/Archopht.120.12.1714 |
0.498 |
|
| 2002 |
Wang GT, Mui C, Musgrave CB, Bent SF. Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2 x 1 and Ge(100)-2 x 1. Journal of the American Chemical Society. 124: 8990-9004. PMID 12137555 DOI: 10.1021/Ja026330W |
0.813 |
|
| 2002 |
Mui C, Han JH, Wang GT, Musgrave CB, Bent SF. Proton transfer reactions on semiconductor surfaces. Journal of the American Chemical Society. 124: 4027-38. PMID 11942841 DOI: 10.1021/Ja0171512 |
0.811 |
|
| 2002 |
Duan HL, Zaharias GA, Bent SF. Effect of filament material on the decomposition of SiH4 in hot wire CVD of Si-based films Materials Research Society Symposium - Proceedings. 715: 21-30. DOI: 10.1557/Proc-715-A15.5 |
0.801 |
|
| 2002 |
Bent SF. Attaching organic layers to semiconductor surfaces Journal of Physical Chemistry B. 106: 2830-2842. DOI: 10.1021/Jp012995T |
0.439 |
|
| 2002 |
Duan HL, Zaharias GA, Bent SF. Detecting reactive species in hot wire chemical vapor deposition Current Opinion in Solid State and Materials Science. 6: 471-477. DOI: 10.1016/S1359-0286(02)00076-1 |
0.809 |
|
| 2002 |
Bent SF. Organic functionalization of group IV semiconductor surfaces: Principles, examples, applications, and prospects Surface Science. 500: 879-903. DOI: 10.1016/S0039-6028(01)01553-9 |
0.356 |
|
| 2001 |
Duan HL, Zaharias GA, Bent SF. Identification of growth precursors in hot wire CVD of amorphous silicon films Materials Research Society Symposium - Proceedings. 664: A311-A316. DOI: 10.1557/Proc-664-A3.1 |
0.799 |
|
| 2001 |
Mui C, Wang GT, Bent SF, Musgrave CB. Reactions of methylamines at the Si(100)-2×1 surface Journal of Chemical Physics. 114: 10170-10180. DOI: 10.1063/1.1370056 |
0.817 |
|
| 2001 |
Duan HL, Zaharias GA, Bent SF. Probing radicals in hot wire decomposition of silane using single photon ionization Applied Physics Letters. 78: 1784-1786. DOI: 10.1063/1.1355994 |
0.774 |
|
| 2001 |
Wang GT, Mui C, Musgrave CB, Bent SF. Example of a thermodynamically controlled reaction on a semiconductor surface: Acetone on Ge(100)-2 × 1 Journal of Physical Chemistry B. 105: 12559-12565. DOI: 10.1021/Jp013058O |
0.816 |
|
| 2001 |
Wang GT, Mui C, Musgrave CB, Bent SF. Effect of a methyl-protecting group on the adsorption of pyrrolidine on Si(100)-2 × Journal of Physical Chemistry B. 105: 3295-3299. DOI: 10.1021/Jp004298R |
0.801 |
|
| 2001 |
Russell JN, Butler JE, Wang GT, Bent SF, Hovis JS, Hamers RJ, D'Evelyn MP. π bond versus radical character of the diamond (1 0 0)-2 × 1 surface Materials Chemistry and Physics. 72: 147-151. DOI: 10.1016/S0254-0584(01)00425-4 |
0.624 |
|
| 2001 |
Duan HL, Zaharias GA, Bent SF. The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane Thin Solid Films. 395: 36-41. DOI: 10.1016/S0040-6090(01)01203-2 |
0.797 |
|
| 2000 |
Lee MS, Bent SF. Temperature effects in the hot wire chemical vapor deposition of amorphous hydrogenated silicon carbon alloy Journal of Applied Physics. 87: 4600-4610. DOI: 10.1063/1.373109 |
0.414 |
|
| 2000 |
Kong MJ, Teplyakov AV, Jagmohan J, Lyubovitsky JG, Mui C, Bent SF. Interaction of Ce cyclic hydrocarbons with a Si(100)-2×1 surface: Adsorption and hydrogenation reactions Journal of Physical Chemistry B. 104: 3000-3007. DOI: 10.1021/Jp992875+ |
0.805 |
|
| 2000 |
Mui C, Bent SF, Musgrave CB. A theoretical study of the structure and thermochemistry of 1,3-butadiene on the Ge/Si(100)-2 × 1 surface Journal of Physical Chemistry A. 104: 2457-2462. DOI: 10.1021/Jp991797N |
0.624 |
|
| 1999 |
Duan HL, Bent SF. In situ diagnostics of methane/hydrogen plasma interactions with Si(100) Materials Research Society Symposium - Proceedings. 569: 179-184. DOI: 10.1557/Proc-569-179 |
0.4 |
|
| 1999 |
Lal P, Teplyakov AV, Noah Y, Kong MJ, Wang GT, Bent SF. Adsorption of ethylene on the Ge(100)-2×1 surface: Coverage and time-dependent behavior Journal of Chemical Physics. 110: 10545-10553. DOI: 10.1063/1.478986 |
0.714 |
|
| 1999 |
Wang GT, Mui C, Musgrave CB, Bent SF. Cycloaddition of Cyclopentadiene and Dicyclopentadiene on Si(100)-2x1: Comparison of Monomer and Dimer Adsorption Journal of Physical Chemistry B. 103: 6803-6808. DOI: 10.1021/Jp991528X |
0.806 |
|
| 1998 |
Lee MS, Bent SF. Spectroscopic and thermal studies of a-SiC:H film growth: Comparison of mono-, tri-, and tetramethylsilane Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1658-1663. DOI: 10.1116/1.581138 |
0.415 |
|
| 1998 |
Teplyakov AV, Kong MJ, Bent SF. Diels-Alder reactions of butadienes with the Si(100)-2×1 surface as a dienophile: Vibrational spectroscopy, thermal desorption and near edge x-ray absorption fine structure studies Journal of Chemical Physics. 108: 4599-4606. DOI: 10.1063/1.475870 |
0.659 |
|
| 1998 |
Teplyakov AV, Lal P, Noah YA, Bent SF. Evidence for a retro-Diels-Alder reaction on a single crystalline surface: Butadienes on Ge(100) [16] Journal of the American Chemical Society. 120: 7377-7378. DOI: 10.1021/Ja980243F |
0.625 |
|
| 1998 |
Kong MJ, Teplyakov AV, Lyubovitsky JG, Bent SF. NEXAFS studies of adsorption of benzene on Si(100)-2×1 Surface Science. 411: 286-293. DOI: 10.1016/S0039-6028(98)00336-7 |
0.4 |
|
| 1998 |
Kong MJ, Teplyakov AV, Lyubovitsky JG, Bent SF. NEXAFS studies of adsorption of benzene on Si(100)-2 x 1 Surface Science. 411: 286-293. |
0.546 |
|
| 1997 |
Lee M, Bent SF. Bonding and Thermal Reactivity in Thin a-SiC:H Films Grown by Methylsilane CVD Journal of Physical Chemistry B. 101: 9195-9205. DOI: 10.1021/Jp9718459 |
0.386 |
|
| 1997 |
Chiang CM, Gates SM, Lee SS, Kong M, Bent SF. Etching, insertion, and abstraction reactions of atomic deuterium with amorphous silicon hydride films Journal of Physical Chemistry B. 101: 9537-9547. DOI: 10.1021/Jp963717A |
0.427 |
|
| 1997 |
Teplyakov AV, Kong MJ, Bent SF. Vibrational spectroscopic studies of Diels-Alder reactions with the Si(100)-2x1 surface as a dienophile Journal of the American Chemical Society. 119: 11100-11101. DOI: 10.1021/Ja972246I |
0.629 |
|
| 1996 |
Lee SS, Kong MJ, Bent SF, Chiang C, Gates SM. Infrared Study of the Reactions of Atomic Deuterium with Amorphous Silicon Monohydride The Journal of Physical Chemistry. 100: 20015-20020. DOI: 10.1021/Jp961928+ |
0.446 |
|
| 1996 |
Kong MJ, Lee SS, Lyubovitsky J, Bent SF. Infrared spectroscopy of methyl groups on silicon Chemical Physics Letters. 263: 1-7. DOI: 10.1016/S0009-2614(96)01186-4 |
0.321 |
|
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