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Nihaar N. Mahatme, Ph.D. - Publications

Affiliations: 
2014 Electrical Engineering Vanderbilt University, Nashville, TN 
Area:
Electronics and Electrical Engineering, Nanotechnology
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32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Chen RM, Mahatme NN, Diggins ZJ, Wang L, Zhang EX, Chen YP, Liu YN, Narasimham B, Witulski AF, Bhuva BL, Fleetwood DM. Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications Ieee Transactions On Nuclear Science. 65: 1823-1829. DOI: 10.1109/Tns.2018.2823385  0.731
2017 Chen RM, Mahatme NN, Diggins ZJ, Wang L, Zhang EX, Chen YP, Liu YN, Narasimham B, Witulski AF, Bhuva BL, Fleetwood DM. Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits Ieee Transactions On Nuclear Science. 64: 2098-2106. DOI: 10.1109/Tns.2017.2711034  0.776
2017 Chen RM, Diggins ZJ, Mahatme NN, Wang L, Zhang EX, Chen YP, Zhang H, Liu YN, Narasimham B, Witulski AF, Bhuva BL, Fleetwood DM. Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits Ieee Transactions On Nuclear Science. 64: 2122-2128. DOI: 10.1109/Tns.2017.2647749  0.732
2017 Zhang H, Jiang H, Assis TR, Mahatme NN, Narasimham B, Massengill LW, Bhuva BL, Wen S, Wong R. Effects of Threshold Voltage Variations on Single-Event Upset Response of Sequential Circuits at Advanced Technology Nodes Ieee Transactions On Nuclear Science. 64: 457-463. DOI: 10.1109/Tns.2016.2637873  0.748
2017 Chen RM, Diggins ZJ, Mahatme NN, Wang L, Zhang EX, Chen YP, Liu YN, Narasimham B, Witulski AF, Bhuva BL, Fleetwood DM. Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits Ieee Transactions On Nuclear Science. 64: 471-476. DOI: 10.1109/Tns.2016.2614963  0.739
2016 Wang HB, Mahatme N, Chen L, Newton M, Li YQ, Liu R, Chen M, Bhuva BL, Lilja K, Wen SJ, Wong R, Fung R, Baeg S. Single-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS Technology Ieee Transactions On Nuclear Science. 63: 385-391. DOI: 10.1109/Tns.2015.2509443  0.627
2015 Dodds NA, Martinez M, Dodd PE, Shaneyfelt MR, Sexton FW, Black JD, Lee DS, Swanson SE, Bhuva BL, Warren KM, Reed RA, Trippe J, Sierawski BD, Weller RA, Mahatme N, et al. Outstanding Conference Paper Award: 2015 IEEE Nuclear and Space Radiation Effects Conference Ieee Transactions On Nuclear Science. 62. DOI: 10.1109/Tns.2015.2502501  0.671
2015 Mahatme NN, Rui L, Wang H, Chen L, Bhuva BL, Robinson WH, Massengill LW, Lilja K, Bounasser M, Wen SJ, Wong R. Influence of Voltage and Particle LET on Timing Vulnerability Factors of Circuits Ieee Transactions On Nuclear Science. 62: 2592-2598. DOI: 10.1109/Tns.2015.2498152  0.642
2015 Kauppila JS, Kay WH, Haeffner TD, Rauch DL, Assis TR, Mahatme NN, Gaspard NJ, Bhuva BL, Alles ML, Holman WT, Massengill LW. Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology Ieee Transactions On Nuclear Science. 62: 2613-2619. DOI: 10.1109/Tns.2015.2493886  0.636
2015 Dodds NA, Martinez MJ, Dodd PE, Shaneyfelt MR, Sexton FW, Black JD, Lee DS, Swanson SE, Bhuva BL, Warren KM, Reed RA, Trippe J, Sierawski BD, Weller RA, Mahatme N, et al. The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2486763  0.751
2015 Wang HB, Li YQ, Chen L, Li LX, Liu R, Baeg S, Mahatme N, Bhuva BL, Wen SJ, Wong R, Fung R. An SEU-tolerant DICE latch design with feedback transistors Ieee Transactions On Nuclear Science. 62: 548-554. DOI: 10.1109/Tns.2015.2399019  0.586
2015 Mahatme NN, Bhuva B, Gaspard N, Assis T, Xu Y, Marcoux P, Vilchis M, Narasimham B, Shih A, Wen SJ, Wong R, Tam N, Shroff M, Koyoma S, Oates A. Terrestrial ser characterization for nanoscale technologies: A comparative study Ieee International Reliability Physics Symposium Proceedings. 2015: 4B41-4B47. DOI: 10.1109/IRPS.2015.7112731  0.625
2014 Mahatme NN, Gaspard NJ, Assis T, Chatterjee I, Loveless TD, Bhuva BL, Robinson WH, Massengill LW, Wen SJ, Wong R. Kernel-based circuit partition approach to mitigate combinational logic soft errors Ieee Transactions On Nuclear Science. 61: 3274-3281. DOI: 10.1109/Tns.2014.2370057  0.673
2014 Chatterjee I, Zhang EX, Bhuva BL, Reed RA, Alles ML, Mahatme NN, Ball DR, Schrimpf RD, Fleetwood DM, Linten D, Simoen E, Mitard J, Claeys C. Geometry dependence of total-dose effects in bulk FinFETs Ieee Transactions On Nuclear Science. 61: 2951-2958. DOI: 10.1109/Tns.2014.2367157  0.543
2014 Chatterjee I, Narasimham B, Mahatme NN, Bhuva BL, Reed RA, Schrimpf RD, Wang JK, Vedula N, Bartz B, Monzel C. Impact of technology scaling on SRAM soft error rates Ieee Transactions On Nuclear Science. 61: 3512-3518. DOI: 10.1109/Tns.2014.2365546  0.771
2014 Gaspard N, Jagannathan S, Diggins ZJ, Mahatme NN, Loveless TD, Bhuva BL, Massengill LW, Holman WT, Narasimham B, Oates A, Marcoux P, Tam N, Vilchis M, Wen SJ, Wong R, et al. Soft error rate comparison of various hardened and non-hardened flip-flops at 28-nm node Ieee International Reliability Physics Symposium Proceedings. SE.5.1-SE.5.5. DOI: 10.1109/IRPS.2014.6861177  0.75
2014 Narasimham B, Chandrasekharan K, Wang JK, Djaja G, Gaspard NJ, Mahatme NN, Assis TR, Bhuva BL. High-speed pulsed-hysteresis-latch design for improved ser performance in 20 nm bulk CMOS process Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2014.6861095  0.691
2014 Mahatme NN, Gaspard NJ, Assis T, Jagannathan S, Chatterjee I, Loveless TD, Bhuva BL, Massengill LW, Wen SJ, Wong R. Impact of technology scaling on the combinational logic soft error rate Ieee International Reliability Physics Symposium Proceedings. 5F.2.1-5F.2.6. DOI: 10.1109/IRPS.2014.6861093  0.648
2013 Mahatme NN, Gaspard NJ, Jagannathan S, Loveless TD, Bhuva BL, Robinson WH, Massengill LW, Wen SJ, Wong R. Impact of supply voltage and frequency on the soft error rate of logic circuits Ieee Transactions On Nuclear Science. 60: 4200-4206. DOI: 10.1109/Tns.2013.2288782  0.667
2013 Diggins ZJ, Gaspard NJ, Mahatme NN, Jagannathan S, Loveless TD, Reece TR, Bhuva BL, Witulski AF, Massengill LW, Wen SJ, Wong R. Scalability of capacitive hardening for flip-flops in advanced technology nodes Ieee Transactions On Nuclear Science. 60: 4394-4398. DOI: 10.1109/Tns.2013.2286272  0.616
2013 Jagannathan S, Loveless TD, Zhang EX, Fleetwood DM, Schrimpf RD, Haeffner TD, Kauppila JS, Mahatme N, Bhuva BL, Alles ML, Holman WT, Witulski AF, Massengill LW. Sensitivity of high-frequency RF circuits to total ionizing dose degradation Ieee Transactions On Nuclear Science. 60: 4498-4504. DOI: 10.1109/Tns.2013.2283457  0.609
2013 Mahatme NN, Gaspard NJ, Jagannathan S, Loveless TD, Chatterjee I, Bhuva BL, Massengill LW, Schrimpf RD. Experimental estimation of the window of vulnerability for logic circuits Ieee Transactions On Nuclear Science. 60: 2691-2696. DOI: 10.1109/Tns.2013.2273740  0.648
2013 Limbrick DB, Mahatme NN, Robinson WH, Bhuva BL. Reliability-Aware Synthesis of Combinational Logic with Minimal Performance Penalty Ieee Transactions On Nuclear Science. 60: 2776-2781. DOI: 10.1109/Tns.2013.2240699  0.604
2013 Mahatme NN, Gaspard NJ, Jagannathan S, Loveless TD, Abdel-Aziz H, Bhuva BL, Massengill LW, Wen SJ, Wong R. Estimating the frequency threshold for logic soft errors Ieee International Reliability Physics Symposium Proceedings. 3D.3.1-3D.3.6. DOI: 10.1109/IRPS.2013.6531991  0.612
2013 Mahatme NN, Chatterjee I, Patki A, Limbrick DB, Bhuva BL, Schrimpf RD, Robinson W. An efficient technique to select logic nodes for single event transient pulse-width reduction Microelectronics Reliability. 53: 114-117. DOI: 10.1016/J.Microrel.2012.07.030  0.583
2012 Mahatme NN, Zhang EX, Reed RA, Bhuva BL, Schrimpf RD, Fleetwood DM, Linten D, Simoen E, Griffoni A, Aoulaiche M, Jurczak M, Groeseneken G. Impact of back-gate bias and device geometry on the total ionizing dose response of 1-transistor floating body rams Ieee Transactions On Nuclear Science. 59: 2966-2973. DOI: 10.1109/Tns.2012.2223828  0.539
2012 Jagannathan S, Loveless TD, Bhuva BL, Gaspard NJ, Mahatme N, Assis T, Wen SJ, Wong R, Massengill LW. Frequency dependence of alpha-particle induced soft error rates of flip-flops in 40-nm CMOS technology Ieee Transactions On Nuclear Science. 59: 2796-2802. DOI: 10.1109/Tns.2012.2223827  0.657
2012 Mahatme NN, Schrimpf RD, Reed RA, Bhuva BL, Griffoni A, Simoen E, Aoulaiche M, Linten D, Jurczak M, Groeseneken G. Total ionizing dose effects on ultra thin buried oxide floating body memories Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2012.6241920  0.482
2011 Chatterjee I, Narasimham B, Mahatme NN, Bhuva BL, Schrimpf RD, Wang JK, Bartz B, Pitta E, Buer M. Single-event charge collection and upset in 40-nm dual- and triple-well bulk CMOS SRAMs Ieee Transactions On Nuclear Science. 58: 2761-2767. DOI: 10.1109/Tns.2011.2172817  0.734
2011 Mahatme NN, Jagannathan S, Loveless TD, Massengill LW, Bhuva BL, Wen SJ, Wong R. Comparison of combinational and sequential error rates for a deep submicron process Ieee Transactions On Nuclear Science. 58: 2719-2725. DOI: 10.1109/Tns.2011.2171993  0.7
2011 Mahatme NN, Bhuva BL, Fang YP, Oates AS. Impact of strained-Si PMOS transistors on SRAM soft error rates Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 202-206. DOI: 10.1109/RADECS.2011.6131304  0.536
2010 Mahatme NN, Chatterjee I, Bhuva BL, Ahlbin J, Massengill LW, Shuler R. Analysis of soft error rates in combinational and sequential logic and implications of hardening for advanced technologies Ieee International Reliability Physics Symposium Proceedings. 1031-1035. DOI: 10.1109/IRPS.2010.5488680  0.599
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