☰

Khalid Hossain, Ph.D. - Publications

Affiliations: 
2007 University of North Texas, Denton, TX, United States 
Area:
Condensed Matter Physics
Tree Info Similar researchers PubMed Report error

24 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Khandaker M, Riahinezhad S, Li Y, Vaughan MB, Sultana F, Morris TL, Phinney L, Hossain K. Plasma nitriding of titanium alloy: Effect of roughness, hardness, biocompatibility, and bonding with bone cement. Bio-Medical Materials and Engineering. 27: 461-474. PMID 27885994 DOI: 10.3233/Bme-161600  0.71
2016 Nunez OR, Tarango AJM, Hossain K, Ramana CV. Effect of post-deposition annealing on the optical and mechanical properties of amorphous tungsten oxynitride thin films Surface & Coatings Technology. 308: 195-202. DOI: 10.1016/J.Surfcoat.2016.07.106  0.349
2016 Hossain K, Höglund L, Phinney LC, Golding TD, Wicks G, Khoshakhlagh A, Ting DZY, Soibel A, Gunapala SD. Hydrogenation Defect Passivation for Improved Minority Carrier Lifetime in Midwavelength Ga-Free InAs/InAsSb Superlattices Journal of Electronic Materials. 45: 5626-5629. DOI: 10.1007/S11664-016-4617-Z  0.716
2015 Arefin N, Kane MH, Larson PR, Whiteside VR, Hossain K, Pritchett BN, Johnson MB, McCann PJ. GaN growth on silicon based substrates using pulsed electron beam deposition (PED) process Materials Research Society Symposium Proceedings. 1736: 95-100. DOI: 10.1557/Opl.2015.244  0.326
2015 Craig AP, Jain M, Wicks G, Golding T, Hossain K, McEwan K, Howle C, Percy B, Marshall ARJ. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb Applied Physics Letters. 106. DOI: 10.1063/1.4921468  0.309
2015 Nunez OR, Moreno Tarango AJ, Murphy NR, Phinney LC, Hossain K, Ramana CV. Physical characterization of sputter-deposited amorphous tungsten oxynitride thin films Thin Solid Films. 596: 160-166. DOI: 10.1016/J.Tsf.2015.08.066  0.721
2014 Debnath MC, Mishima TD, Santos MB, Phinney LC, Golding TD, Hossain K. High electron mobility in InSb epilayers and quantum wells grown with AlSb nucleation on Ge-on-insulator substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4866397  0.723
2014 Debnath MC, Mishima TD, Santos MB, Hossain K. Effect of substrate miscut on the electron mobility in InSb(001) structures on Ge and Ge-on-insulator substrates Chinese Science Bulletin. 59: 369-373. DOI: 10.1007/S11434-013-0059-7  0.37
2012 Debnath MC, Mishima TD, Santos MB, Hossain K, Holland OW. Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates Journal of Applied Physics. 111: 073525. DOI: 10.1063/1.3702820  0.357
2010 Hossain K, Holland OW, Hellmer R, VanMil B, Bubulac LO, Golding TD. Wafer Mapping Using Deuterium Enhanced Defect Characterization Journal of Electronic Materials. 39: 930-935. DOI: 10.1007/S11664-010-1162-Z  0.353
2010 Hossain K, Kummari VC, Holland OW, Rout B, Duggan JL, McDaniel FD. Compositional and strain characterization of ion-beam-synthesized Ge x Si 1-x thin films Journal of Electronic Materials. 39: 174-177. DOI: 10.1007/S11664-009-1042-6  0.616
2009 Debnath MC, Mishima TD, Santos MB, Hossain K, Holland OW. Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy Journal of Vacuum Science & Technology B. 27: 2453-2456. DOI: 10.1116/1.3258653  0.381
2009 Phinney LC, Duggan JL, Lapicki G, Naab FU, Hossain K, McDaniel FD. Thorium and uranium M-shell x-ray production by 0.4-4.0 MeV protons and 0.4-6.0 MeV helium ions Journal of Physics B: Atomic, Molecular and Optical Physics. 42. DOI: 10.1088/0953-4075/42/8/085202  0.706
2008 Poudel PR, Hossain K, Li J, Gorman B, Neogi A, Rout B, Duggan JL, McDaniel FD. Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation Mrs Proceedings. 1066. DOI: 10.1557/Proc-1066-A07-11  0.727
2008 Hossain K, Holland OW, Mishima TD, Santos MB, Duggan JL, McDaniel FD. A unique method of forming GexSi1-x thin-films on insulator Materials Research Society Symposium Proceedings. 1036: 34-40. DOI: 10.1557/Proc-1036-M04-17  0.609
2007 Poudel PR, Mitchell LJ, Smith EB, Phinney LC, Hossain K, Burns LR, Weathers DL, Duggan JL, McDaniel FD. Installation of ion implantation beam line for 3 MV Tandem Pelletron Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 627-629. DOI: 10.1016/J.Nimb.2007.04.241  0.7
2007 Hossain K, Holland OW, Naab FU, Mitchell LJ, Poudel PR, Duggan JL, McDaniel FD. Dose-dependent thermal oxidation of Ge+-implanted silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 620-623. DOI: 10.1016/J.Nimb.2007.04.240  0.721
2007 Mitchell LJ, Phinney LC, Holland OW, Hossain K, Naab F, Smith EB, Paudel P, Dhoubhadel M, Duggan JL, McDaniel FD. An investigation into the formation of Ru2Si3 nanocrystals in silica using ion implantation and thermal oxidation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 669-673. DOI: 10.1016/J.Nimb.2007.03.045  0.732
2006 Cottier RJ, Amir FZ, Zhao W, Hossain K, Gorman BP, Golding TD, Anibou N, Donner W. Molecular beam epitaxial growth of osmium silicides Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1488-1491. DOI: 10.1116/1.2192527  0.38
2006 Duggan JL, Naab F, Hossain K, Holland OW, McDaniel FD, Xu JJ, Zhao ZY, Guo BN, Liu J, Shim KH, Jeong U. Analysis of the accuracy of several methods for determining the concentration of 11B+ implanted silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 243: 205-210. DOI: 10.1016/J.Nimb.2005.07.239  0.593
2006 Jiang Y, Ru G, Qu X, Li B, Agarwal A, Poate J, Hossain K, Holland W. Arsenic redistribution induced by low-temperature Ni silicidation at 450°C on shallow junctions Journal of Electronic Materials. 35: 937-940. DOI: 10.1007/Bf02692550  0.388
2005 Cottier RJ, Amir FZ, Hossain K, House JB, Gorman BP, Perez JM, Holland OW, Golding TD, Stokes DW. Molecular beam epitaxial growth of Fe(Si 1-x Ge x) 2 epilayers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1299-1303. DOI: 10.1116/1.1924607  0.374
2005 Mitchell LJ, Holland OW, Hossain K, Smith EB, Golden TD, Duggan JL, McDaniel FD. Formation of optically-active, metal silicides using ion implantation and/or oxidation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 241: 548-552. DOI: 10.1016/J.Nimb.2005.07.104  0.612
2005 Hossain K, Savage LK, Holland OW. Rate enhancement during thermal oxidation of Ge+-implanted silicon Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 241: 553-558. DOI: 10.1016/J.Nimb.2005.07.103  0.407
Show low-probability matches.