Zhaoxu Tian, Ph.D. - Publications

Affiliations: 
2006 University of Central Florida, Orlando, FL, United States 
Area:
Materials Science Engineering

9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Yao WG, Guan KM, Tian ZN, Xu JJ, Chen QD, Sun HB. Mode-selecting micrograting cavity laser Journal of Lightwave Technology. 34: 4142-4146. DOI: 10.1109/JLT.2016.2592101  0.408
2008 Tian Z, Quick NR, Kar A. Laser endotaxy in silicon carbide and PIN diode fabrication Journal of Laser Applications. 20: 106-115. DOI: 10.2351/1.2831607  0.64
2006 Tian Z, Quick NR, Kar A. Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes Materials Science Forum. 823-826. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.823  0.652
2006 Tian Z, Quick NR, Kar A. Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B10-07  0.633
2006 Tian Z, Quick NR, Kar A. Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide Acta Materialia. 54: 4273-4283. DOI: 10.1016/J.Actamat.2006.05.020  0.614
2005 Mahaney TJ, Muravjov AV, Dolguikh MV, Winningham TA, Peale RE, Tian Z, Bet S, Kar A, Klimov M. Laser doping of germanium Proceedings of Spie - the International Society For Optical Engineering. 5713: 67-73. DOI: 10.1117/12.585470  0.616
2005 Tian Z, Salama IA, Quick NR, Kar A. Effects of different laser sources and doping methods used to dope silicon carbide Acta Materialia. 53: 2835-2844. DOI: 10.1016/J.Actamat.2005.02.043  0.635
2005 Tian Z, Quick NR, Kar A. Characteristics of 6H-Silicon Carbide PIN Diodes Prototyping by Laser Doping Journal of Electronic Materials. 34: 430-438. DOI: 10.1007/S11664-005-0123-4  0.623
2004 Tian Z, Quick NR, Kar A. Laser Direct Write and Gas Immersion Laser Doping Fabrication of SiC Diodes Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J3.4  0.63
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