Jierui Liang - Publications

Affiliations: 
University of Pittsburgh, Pittsburgh, PA, United States 
Area:
ion gated electronics, 2D materials, memory, transistors, electrolyte

6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Sun Z, Xu K, Liu C, Beaumariage J, Liang J, Fullerton-Shirey SK, Shi ZY, Wu J, Snoke D. Photoluminescence Switching Effect in a Two-Dimensional Atomic Crystal. Acs Nano. PMID 34878266 DOI: 10.1021/acsnano.1c06016  0.368
2020 Liang J, Xu K, Arora S, Laaser JE, Fullerton-Shirey SK. Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions. Materials (Basel, Switzerland). 13. PMID 32121528 DOI: 10.3390/Ma13051089  0.409
2019 Liang J, Xu K, Wu M, Hunt BM, Wang WH, Cho K, Fullerton-Shirey SK. Molecularly thin electrolyte for all-solid-state non-volatile two-dimensional crystal memory. Nano Letters. PMID 31661286 DOI: 10.1021/Acs.Nanolett.9B03792  0.433
2019 Xu K, Liang J, Woeppel A, Bostian ME, Ding H, Chao Z, McKone JR, Beckman EJ, Fullerton-Shirey SK. Electric double layer gating of two-dimensional field-effect transistors using a single-ion conductor. Acs Applied Materials & Interfaces. PMID 31486629 DOI: 10.1021/Acsami.9B11526  0.424
2019 Sun Z, Beaumariage J, Xu K, Liang J, Hou S, Forrest SR, Fullerton-Shirey SK, Snoke DW. Electric-field-induced optical hysteresis in single-layer WSe2 Applied Physics Letters. 115: 161103. DOI: 10.1063/1.5123514  0.343
2018 Liang J, Xu K, Toncini B, Bersch B, Jariwala B, Lin Y, Robinson J, Fullerton-Shirey SK. Impact of Post-Lithography Polymer Residue on the Electrical Characteristics of MoS2 and WSe2 Field Effect Transistors Advanced Materials Interfaces. 6: 1801321. DOI: 10.1002/Admi.201801321  0.336
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