| Year |
Citation |
Score |
| 2019 |
Kasaei L, Manichev V, Li M, Feldman LC, Gustafsson T, Collantes Y, Hellstrom E, Demir M, Acharya N, Bhattarai P, Chen K, Xi XX, Davidson BA. Normal-state and superconducting properties of Co-doped BaFe2As2 and MgB2 thin films after focused helium ion beam irradiation Superconductor Science and Technology. 32: 95009. DOI: 10.1088/1361-6668/Ab2D52 |
0.334 |
|
| 2019 |
Pitthan E, Amarasinghe VP, Xu C, Gobbi AL, Dartora GHS, Gustafsson T, Feldman LC, Stedile FC. Chemical state of phosphorous at the SiC/SiO 2 interface Thin Solid Films. 675: 172-176. DOI: 10.1016/J.Tsf.2019.02.038 |
0.446 |
|
| 2019 |
Hijazi H, Li M, Barbacci D, Schultz A, Thorpe R, Gustafsson T, Feldman LC. Channeling in the helium ion microscope Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 456: 92-96. DOI: 10.1016/J.Nimb.2019.07.002 |
0.319 |
|
| 2018 |
Li X, Lee SS, Li M, Ermakov A, Medina-Ramos J, Fister TT, Amarasinghe V, Gustafsson T, Garfunkel E, Fenter P, Feldman LC. Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures Applied Physics Letters. 113: 131601. DOI: 10.1063/1.5048220 |
0.699 |
|
| 2018 |
Kasaei L, Melbourne T, Manichev V, Feldman LC, Gustafsson T, Chen K, Xi XX, Davidson BA. MgB2 Josephson junctions produced by focused helium ion beam irradiation Aip Advances. 8: 75020. DOI: 10.1063/1.5030751 |
0.325 |
|
| 2017 |
Woods KN, Thomas MC, Mitchson G, Ditto J, Xu C, Kayal D, Frisella KC, Gustafsson T, Garfunkel E, Chabal YJ, Johnson DC, Page CJ. Non-uniform Composition Profiles in Amorphous Multi-Metal Oxide Thin Films Deposited from Aqueous Solution. Acs Applied Materials & Interfaces. PMID 28959877 DOI: 10.1021/Acsami.7B12462 |
0.396 |
|
| 2017 |
Li X, Ermakov A, Amarasinghe V, Garfunkel E, Gustafsson T, Feldman LC. Oxidation induced stress in SiO2/SiC structures Applied Physics Letters. 110: 141604. DOI: 10.1063/1.4979544 |
0.362 |
|
| 2017 |
Pitthan E, Amarasinghe VP, Xu C, Gustafsson T, Stedile FC, Feldman LC. 4H-SiC surface energy tuning by nitrogen up-take Applied Surface Science. 402: 192-197. DOI: 10.1016/J.Apsusc.2017.01.073 |
0.392 |
|
| 2016 |
Giordani A, Lee HD, Xu C, Gustafsson T, Hunter JL. Temperature dependent Cs retention, distribution, and ion yield changes during Cs+ bombardment SIMS Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4943159 |
0.358 |
|
| 2016 |
Sina M, Alvarado J, Shobukawa H, Alexander C, Manichev V, Feldman L, Gustafsson T, Stevenson KJ, Meng YS. Direct Visualization of the Solid Electrolyte Interphase and Its Effects on Silicon Electrochemical Performance Advanced Materials Interfaces. 3: 1600438-1600438. DOI: 10.1002/Admi.201600438 |
0.347 |
|
| 2015 |
Fairley KC, Merrill DR, Woods KN, Ditto J, Xu C, Oleksak RP, Gustafsson T, Johnson DW, Garfunkel E, Herman GS, Johnson DC, Page CJ. Non-uniform Composition Profiles in Inorganic Thin Films from Aqueous Solutions. Acs Applied Materials & Interfaces. PMID 26671578 DOI: 10.1021/Acsami.5B09692 |
0.427 |
|
| 2015 |
Xu Y, Xu C, Liu G, Lee HD, Shubeita SM, Jiao C, Modic A, Ahyi AC, Sharma Y, Wan A, Williams JR, Gustafsson T, Dhar S, Garfunkel EL, Feldman LC. Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface Journal of Applied Physics. 118. DOI: 10.1063/1.4937400 |
0.411 |
|
| 2015 |
Liu G, Xu C, Yakshinskiy B, Wielunski L, Gustafsson T, Bloch J, Dhar S, Feldman LC. Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), ( 0001¯), and ( 112¯0) surfaces Applied Physics Letters. 106: 123502. DOI: 10.1063/1.4916266 |
0.358 |
|
| 2015 |
Anderson JT, Wang W, Jiang K, Gustafsson T, Xu C, Gafunkel EL, Keszler DA. Chemically amplified dehydration of thin oxide films Acs Sustainable Chemistry and Engineering. 3: 1081-1085. DOI: 10.1021/Sc500824A |
0.471 |
|
| 2015 |
Liu G, Xu Y, Xu C, Basile A, Wang F, Dhar S, Conrad E, Mooney P, Gustafsson T, Feldman LC. Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery Applied Surface Science. 324: 30-34. DOI: 10.1016/J.Apsusc.2014.10.113 |
0.344 |
|
| 2014 |
Liu G, Xu C, Yakshinskiy B, Wielunski L, Gustafsson T, Bloch J, Dhar S, Feldman LC. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties Applied Physics Letters. 105: 191602. DOI: 10.1063/1.4901719 |
0.38 |
|
| 2014 |
Xu Y, Zhu X, Lee HD, Xu C, Shubeita SM, Ahyi AC, Sharma Y, Williams JR, Lu W, Ceesay S, Tuttle BR, Wan A, Pantelides ST, Gustafsson T, Garfunkel EL, et al. Atomic state and characterization of nitrogen at the SiC/SiO2 interface Journal of Applied Physics. 115. DOI: 10.1063/1.4861626 |
0.446 |
|
| 2014 |
Lee HD, Xu C, Shubeita SM, Brahlek M, Koirala N, Oh S, Gustafsson T. Indium and bismuth interdiffusion and its influence on the mobility in In2Se3/Bi2Se3 Thin Solid Films. 556: 322-324. DOI: 10.1016/J.Tsf.2014.01.082 |
0.407 |
|
| 2014 |
Morandeau AE, Fitts JP, Lee HD, Shubeita SM, Feldman LC, Gustafsson T, White CE. Nanoscale heterogeneities in a fractured alkali-activated slag binder: A helium ion microscopy analysis Cement and Concrete Research. DOI: 10.1016/J.Cemconres.2015.07.007 |
0.331 |
|
| 2013 |
Yang F, Yang Z, Li W, Li F, Zhu X, Gu L, Lee HD, Shubeita S, Xu C, Gustafsson T, Guo J. Dielectric and insulating properties of SrTiO3/Si heterostructure controlled by cation concentration Science China Physics, Mechanics and Astronomy. 56: 2404-2409. DOI: 10.1007/S11433-013-5344-6 |
0.442 |
|
| 2011 |
Goncharova LV, Dalponte M, Feng T, Gustafsson T, Garfunkel E, Lysaght PS, Bersuker G. Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001) Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.115329 |
0.663 |
|
| 2011 |
Bansal N, Kim YS, Edrey E, Brahlek M, Horibe Y, Iida K, Tanimura M, Li GH, Feng T, Lee HD, Gustafsson T, Andrei E, Oh S. Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface Thin Solid Films. 520: 224-229. DOI: 10.1016/J.Tsf.2011.07.033 |
0.652 |
|
| 2010 |
Zhu X, Lee HD, Feng T, Ahyi AC, Mastrogiovanni D, Wan A, Garfunkel E, Williams JR, Gustafsson T, Feldman LC. Structure and stoichiometry of (0001) 4H-SiC/oxide interface Applied Physics Letters. 97. DOI: 10.1063/1.3481672 |
0.62 |
|
| 2010 |
Chambers SA, Engelhard MH, Shutthanandan V, Zhu Z, Droubay TC, Qiao L, Sushko PV, Feng T, Lee HD, Gustafsson T, Garfunkel E, Shah AB, Zuo JM, Ramasse QM. Instability, intermixing and electronic structure at the epitaxial LaAlO3SrTiO3(001) heterojunction Surface Science Reports. 65: 317-352. DOI: 10.1016/J.Surfrep.2010.09.001 |
0.595 |
|
| 2010 |
Lee HD, Feng T, Yu L, Mastrogiovanni D, Wan A, Garfunkel E, Gustafsson T. ALD growth of Al2O3 on GaAs: Oxide reduction, interface structure and CV performance Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 260-263. DOI: 10.1002/Pssc.200982425 |
0.669 |
|
| 2009 |
Dalponte M, Adam MC, Boudinov HI, Goncharova LV, Feng T, Garfunkel E, Gustafsson T. Effect of excess vacancy concentration on As and Sb doping in Si Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/16/165106 |
0.597 |
|
| 2009 |
Lee HD, Feng T, Yu L, Mastrogiovanni D, Wan A, Gustafsson T, Garfunkel E. Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 Applied Physics Letters. 94. DOI: 10.1063/1.3148723 |
0.657 |
|
| 2007 |
Goncharova LV, Dalponte M, Gustafsson T, Celik O, Garfunkel E, Lysaght PS, Bersuker G. Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 261-268. DOI: 10.1116/1.2435376 |
0.466 |
|
| 2007 |
Dalponte M, Boudinov H, Goncharova LV, Garfunkel E, Gustafsson T. MEIS study of antimony implantation in SIMOX and vacancy-rich Si(1 0 0) Journal of Physics D: Applied Physics. 40: 4222-4227. DOI: 10.1088/0022-3727/40/14/017 |
0.348 |
|
| 2007 |
Goncharova LV, Dalponte M, Celik O, Garfunkel E, Gustafsson T, Lysaght PS, Bersuker GI. Gate metal-induced diffusion and interface reactions in Hf oxide films on Si Aip Conference Proceedings. 931: 324-328. DOI: 10.1063/1.2799392 |
0.369 |
|
| 2007 |
Goel N, Tsai W, Garner CM, Sun Y, Pianetta P, Warusawithana M, Schlom DG, Wen H, Gaspe C, Keay JC, Santos MB, Goncharova LV, Garfunkel E, Gustafsson T. Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As Applied Physics Letters. 91. DOI: 10.1063/1.2783264 |
0.361 |
|
| 2007 |
Wang Y, Ho MT, Goncharova LV, Wielunski LS, Rivillon-Amy S, Chabal YJ, Gustafsson T, Moumen N, Boleslawski M. Characterization of ultra-thin hafnium oxide films grown on silicon by atomic layer deposition using tetrakis(ethylmethyl-amino) hafnium and water precursors Chemistry of Materials. 19: 3127-3138. DOI: 10.1021/Cm061761P |
0.507 |
|
| 2006 |
Barnes R, Starodub D, Gustafsson T, Garfunkel E. A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100) Journal of Applied Physics. 100. DOI: 10.1063/1.2234820 |
0.484 |
|
| 2006 |
Goncharova LV, Dalponte M, Starodub DG, Gustafsson T, Garfunkel E, Lysaght PS, Foran B, Barnett J, Bersuker G. Oxygen diffusion and reactions in Hf-based dielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2221522 |
0.443 |
|
| 2006 |
Goncharova LV, Starodub DG, Garfunkel E, Gustafsson T, Vaithyanathan V, Lettieri J, Schlom DG. Interface structure and thermal stability of epitaxial SrTiO 3 thin films on Si (001) Journal of Applied Physics. 100. DOI: 10.1063/1.2206710 |
0.463 |
|
| 2006 |
Dalponte M, Boudinov H, Goncharova LV, Garfunkel E, Gustafsson T. MEIS study of As implantation in O or N pre-implanted Si(0 0 1) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 874-877. DOI: 10.1016/J.Nimb.2006.03.154 |
0.364 |
|
| 2005 |
Grande PL, Hentz A, Schiwietz G, Starodub D, Garfunkel E, Gustafsson T. Observation of collective inner-shell effects for protons backscattered from the Al(110) surface Physical Review a - Atomic, Molecular, and Optical Physics. 72. DOI: 10.1103/Physreva.72.012902 |
0.409 |
|
| 2005 |
Hong M, Kortan AR, Chang P, Huang YL, Chen CP, Chou HY, Lee HY, Kwo J, Chu M, Chen CH, Goncharova LV, Garfunkel E, Gustafsson T. High-quality nanothickness single-crystal Sc2O3 film grown on Si(111) Applied Physics Letters. 87: 251902. DOI: 10.1063/1.2147711 |
0.468 |
|
| 2005 |
Lichtenwalner DJ, Jur JS, Kingon AI, Agustin MP, Yang Y, Stemmer S, Goncharova LV, Gustafsson T, Garfunkel E. Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction Journal of Applied Physics. 98. DOI: 10.1063/1.1988967 |
0.453 |
|
| 2005 |
Frank MM, Wilk GD, Starodub D, Gustafsson T, Garfunkel E, Chabal YJ, Grazul J, Muller DA. Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1899745 |
0.444 |
|
| 2005 |
Delabie A, Puurunen RL, Brijs B, Caymax M, Conard T, Onsia B, Richard O, Vandervorst W, Zhao C, Heyns MM, Meuris M, Viitanen MM, Brongersma HH, De Ridder M, Goncharova LV, ... ... Gustafsson T, et al. Atomic layer deposition of hafnium oxide on germanium substrates Journal of Applied Physics. 97. DOI: 10.1063/1.1856221 |
0.406 |
|
| 2004 |
Grande PL, Hentz A, Schiwietz G, Schulte WH, Busch BW, Starodub D, Gustafsson T. Nonperturbative treatment of medium-energy proton scattering under shadowing-blocking conditions in Al(110) Physical Review B. 69: 104112. DOI: 10.1103/Physrevb.69.104112 |
0.764 |
|
| 2004 |
Brewer RT, Ho MT, Zhang KZ, Goncharova LV, Starodub DG, Gustafsson T, Chabal YJ, Moumen N. Ammonia pretreatment for high-k dielectric growth on silicon Applied Physics Letters. 85: 3830-3832. DOI: 10.1063/1.1807024 |
0.458 |
|
| 2004 |
Dhar S, Song YW, Feldman LC, Isaacs-Smith T, Tin CC, Williams JR, Chung G, Nishimura T, Starodub D, Gustafsson T, Garfunkel E. Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(112̄0) 4H-SiC interface Applied Physics Letters. 84: 1498-1500. DOI: 10.1063/1.1651325 |
0.372 |
|
| 2004 |
Starodub D, Gustafsson T, Garfunkel E. The reaction of O2 with Al(1 1 0): A medium energy ion scattering study of nano-scale oxidation Surface Science. 552: 199-214. DOI: 10.1016/J.Susc.2004.01.019 |
0.441 |
|
| 2003 |
Sayan S, Goncharova L, Starodub D, Bartynski RA, Zhao X, Vanderbilt D, Gustafsson T, Garfunkel E. Interface composition and band alignment issues in high-K gate stacks 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 26. DOI: 10.1109/ISDRS.2003.1271978 |
0.319 |
|
| 2003 |
Sayan S, Garfunkel E, Nishimura T, Schulte WH, Gustafsson T, Wilk GD. Thermal decomposition behavior of the HfO2/SiO2/Si system Journal of Applied Physics. 94: 928-934. DOI: 10.1063/1.1578525 |
0.403 |
|
| 2003 |
Tsai W, Carter RJ, Nohira H, Caymax M, Conard T, Cosnier V, DeGendt S, Heyns M, Petry J, Richard O, Vandervorst W, Young E, Zhao C, Maes J, Tuominen M, ... ... Gustafsson T, et al. Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition Microelectronic Engineering. 65: 259-272. DOI: 10.1016/S0167-9317(02)00898-5 |
0.494 |
|
| 2003 |
Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, ... Gustafsson T, et al. Advances in high κ gate dielectrics for Si and III-V semiconductors Journal of Crystal Growth. 251: 645-650. DOI: 10.1016/S0022-0248(02)02192-9 |
0.421 |
|
| 2002 |
Sayan S, Aravamudhan S, Busch BW, Schulte WH, Cosandey F, Wilk GD, Gustafsson T, Garfunkel E. Chemical vapor deposition of HfO2 films on Si(100) Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 507-512. DOI: 10.1116/1.1450584 |
0.769 |
|
| 2002 |
Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, ... Gustafsson T, et al. Advances in high & kappa gate dielectrics for Si and III-V semiconductors Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 47-48. DOI: 10.1109/MBE.2002.1037753 |
0.307 |
|
| 2002 |
Ho MY, Gong H, Wilk GD, Busch BW, Green ML, Lin WH, See A, Lahiri SK, Loomans ME, Räisänen PI, Gustafsson T. Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition Applied Physics Letters. 81: 4218-4220. DOI: 10.1063/1.1522826 |
0.412 |
|
| 2001 |
Busch BW, Uebing C, Gustafsson T. Rocksalt CrC formation on the Fe-15% Cr(100) surface Physical Review B. 64. DOI: 10.1103/Physrevb.64.115427 |
0.728 |
|
| 2001 |
Busch BW, Kwo J, Hong M, Mannaerts JP, Sapjeta BJ, Schulte WH, Garfunkel E, Gustafsson T. Interface reactions of high-κ Y2O3 gate oxides with Si Applied Physics Letters. 79: 2447-2449. DOI: 10.1063/1.1406989 |
0.476 |
|
| 2001 |
Maria JP, Wicaksana D, Kingon AI, Busch B, Schulte H, Garfunkel E, Gustafsson T. High temperature stability in lanthanum and zirconia-based gate dielectrics Journal of Applied Physics. 90: 3476-3482. DOI: 10.1063/1.1391418 |
0.78 |
|
| 2001 |
Chambers JJ, Busch BW, Schulte WH, Gustafsson T, Garfunkel E, Wang S, Maher DM, Klein TM, Parsons GN. Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon Applied Surface Science. 181: 78-93. DOI: 10.1016/S0169-4332(01)00373-7 |
0.792 |
|
| 2001 |
Busch BW, Schulte WH, Gustafsson T, Uebing C. Layer-resolved depth profiling at single crystal surfaces Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 183: 88-96. DOI: 10.1016/S0168-583X(01)00572-9 |
0.774 |
|
| 2001 |
Schulte WH, Busch BW, Garfunkel E, Gustafsson T, Schiwietz G, Grande PL. Limitations to depth resolution in ion scattering experiments Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 183: 16-24. DOI: 10.1016/S0168-583X(01)00313-5 |
0.77 |
|
| 2001 |
Gustafsson T, Lu HC, Busch BW, Schulte WH, Garfunkel E. High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 183: 146-153. DOI: 10.1016/S0168-583X(00)00619-4 |
0.799 |
|
| 2000 |
Busch BW, Schulte WH, Garfunkel E, Gustafsson T, Qi W, Nieh R, Lee J. Oxygen exchange and transport in thin zirconia films on Si(100) Physical Review B - Condensed Matter and Materials Physics. 62. DOI: 10.1103/Physrevb.62.R13290 |
0.789 |
|
| 2000 |
Busch B, Gustafsson T. Thermal expansion and mean-square displacements of the Al(110) surface studied with medium-energy ion scattering Physical Review B. 61: 16097-16104. DOI: 10.1103/Physrevb.61.16097 |
0.769 |
|
| 2000 |
Chang JP, Green ML, Donnelly VM, Opila RL, Eng J, Sapjeta J, Silverman PJ, Weir B, Lu HC, Gustafsson T, Garfunkel E. Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy Journal of Applied Physics. 87: 4449-4455. DOI: 10.1063/1.373090 |
0.472 |
|
| 2000 |
Lu HC, Gusev EP, Garfunkel E, Busch BW, Gustafsson T, Sorsch TW, Green ML. Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon Journal of Applied Physics. 87: 1550-1555. DOI: 10.1063/1.372048 |
0.795 |
|
| 2000 |
Lu HC, Gusev E, Yasuda N, Green M, Alers G, Garfunkel E, Gustafsson T. Growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon Applied Surface Science. 166: 465-468. DOI: 10.1016/S0169-4332(00)00475-X |
0.485 |
|
| 2000 |
Busch BW, Gustafsson T, Viefhaus H, Uebing C. Medium-energy ion scattering study of arsenic and sulfur segregation to the Fe-9% W(100) surface Surface Science. 463: 145-155. DOI: 10.1016/S0039-6028(00)00623-3 |
0.78 |
|
| 1999 |
Gusev EP, Lu HC, Garfunkel EL, Gustafsson T, Green ML. Growth and characterization of ultrathin nitrided silicon oxide films Ibm Journal of Research and Development. 43: 265-286. DOI: 10.1147/Rd.433.0265 |
0.41 |
|
| 1999 |
Starodub D, Gusev EP, Garfunkel E, Gustafsson T. Silicon oxide decomposition and desorption during the thermal oxidation of silicon Surface Review and Letters. 6: 45-52. DOI: 10.1142/S0218625X99000081 |
0.411 |
|
| 1999 |
Busch BW, Gustafsson T, Uebing C. Competition of arsenic and sulfur segregation on Fe-9%W(100) single crystal surfaces Applied Physics Letters. 74: 3564-3566. DOI: 10.1063/1.124162 |
0.401 |
|
| 1999 |
Lu HC, Yasuda N, Garfunkel E, Gustafsson T, Chang JP, Opila RL, Alers G. Structural properties of thin films of high dielectric constant materials on silicon Microelectronic Engineering. 48: 287-290. DOI: 10.1016/S0167-9317(99)00390-1 |
0.508 |
|
| 1998 |
Gusev EP, Lu HC, Garfunkel E, Gustafsson T, Green ML, Brasen D, Lennard WN. Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process Journal of Applied Physics. 84: 2980-2982. DOI: 10.1063/1.368435 |
0.399 |
|
| 1998 |
Alers GB, Werder DJ, Chabal Y, Lu HC, Gusev EP, Garfunkel E, Gustafsson T, Urdahl RS. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures Applied Physics Letters. 73: 1517-1519. DOI: 10.1063/1.122191 |
0.466 |
|
| 1998 |
Gupta A, Toby S, Gusev EP, Lu HC, Li Y, Green ML, Gustafsson T, Garfunkel E. Nitrous oxide gas phase chemistry during silicon oxynitride film growth Progress in Surface Science. 59: 103-115. DOI: 10.1016/S0079-6816(98)00039-2 |
0.338 |
|
| 1998 |
Busch BW, Gustafsson T. Oscillatory relaxation of Al(110) reinvestigated by using medium-energy ion scattering Surface Science. 415. DOI: 10.1016/S0039-6028(98)00620-7 |
0.368 |
|
| 1998 |
Busch BW, Gustafsson T. Temperature dependent structure of clean Ag(110) studied by medium energy ion scattering Surface Science. 407: 7-15. DOI: 10.1016/S0039-6028(98)00065-X |
0.387 |
|
| 1997 |
Chae KH, Lu HG, Statiris P, Gustafsson T. THE TEMPERATURE DEPENDENCE OF THE SURFACE RELAXATION OF Cu(111) AND Ag(111) — EVIDENCE FOR GIANT ANHARMONIC EFFECTS Surface Review and Letters. 4: 1091-1094. DOI: 10.1142/S0218625X97001358 |
0.378 |
|
| 1997 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E, Green ML, Brasen D. The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide Journal of Applied Physics. 82: 896-898. DOI: 10.1063/1.365858 |
0.452 |
|
| 1997 |
Lu HC, Gusev EP, Gustafsson T, Garfunkel E. Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides Journal of Applied Physics. 81: 6992-6995. DOI: 10.1063/1.365264 |
0.51 |
|
| 1997 |
Green ML, Sorsch T, Feldman LC, Lennard WN, Gusev EP, Garfunkel E, Lu HC, Gustafsson T. Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C Applied Physics Letters. 71: 2978-2980. DOI: 10.1063/1.120235 |
0.341 |
|
| 1997 |
Lu HC, Gusev EP, Gustafsson T, Brasen D, Green ML, Garfunkel E. Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100) Microelectronic Engineering. 36: 29-32. DOI: 10.1016/S0167-9317(97)00010-5 |
0.411 |
|
| 1997 |
Zhou JB, Gustafsson T. Growth of thin Cu films on MgO(001) Surface Science. 375: 221-225. DOI: 10.1016/S0039-6028(96)01266-6 |
0.402 |
|
| 1997 |
Zhou JB, Gustafsson T, Garfunkel E. The structure and thermal behavior of Cu on ultrathin films of SiO2 on Si(111) Surface Science. 372: 21-27. DOI: 10.1016/S0039-6028(96)01100-4 |
0.357 |
|
| 1996 |
Gustafsson T, Garfunkel E, Gusev EP, Häberle P, Lu HC, Zhou JB. Structural studies of oxide surfaces Surface Review and Letters. 3: 1561-1565. DOI: 10.1142/S0218625X96002552 |
0.42 |
|
| 1996 |
Gusev EP, Lu HC, Garfunkel E, Gustafsson T. Thermal behavior of the clean Ni(111) surface Surface Review and Letters. 3: 1349-1353. DOI: 10.1142/S0218625X96002357 |
0.403 |
|
| 1996 |
Lu HC, Gusev EP, Gustafsson T, Garfunkel E, Green ML, Brasen D, Feldman LC. High resolution ion scattering study of silicon oxynitridation Applied Physics Letters. 69: 2713-2715. DOI: 10.1063/1.117687 |
0.442 |
|
| 1996 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E. The initial oxidation of silicon: New ion scattering results in the ultra-thin regime Applied Surface Science. 104: 329-334. DOI: 10.1016/S0169-4332(96)00166-3 |
0.492 |
|
| 1996 |
Lu HC, Gusev EP, Garfunkel E, Gustafsson T. An ion scattering study of the interaction of oxygen with Si(111): Surface roughening and oxide growth Surface Science. 351: 111-128. DOI: 10.1016/0039-6028(95)01351-2 |
0.452 |
|
| 1996 |
Lu HC, Gusev EP, Garfunkel E, Gustafsson T. A MEIS study of thermal effects on the Ni(111) surface Surface Science. 352: 21-24. DOI: 10.1016/0039-6028(95)01083-1 |
0.393 |
|
| 1995 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E. Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering. Physical Review. B, Condensed Matter. 52: 1759-1775. PMID 9981243 DOI: 10.1103/Physrevb.52.1759 |
0.467 |
|
| 1995 |
Lu HC, Gustafsson T, Gusev EP, Garfunkel E. An isotopic labeling study of the growth of thin oxide films on Si(100) Applied Physics Letters. 67: 1742. DOI: 10.1063/1.115035 |
0.459 |
|
| 1994 |
Gusev EP, Lu HC, Gustafsson T, Garfunkel E. On the mechanism of ultra thin silicon oxide film growth during thermal oxidation Materials Research Society Symposium Proceedings. 318: 69-74. DOI: 10.1557/Proc-318-69 |
0.456 |
|
| 1994 |
Zhou JB, Lu HC, Gustafsson T, Häberle P. Surface structure of MgO(001): a medium energy ion scattering study Surface Science. 302: 350-362. DOI: 10.1016/0039-6028(94)90839-7 |
0.432 |
|
| 1993 |
Statiris P, Häberle PT, Gustafsson T. Structural study of the alkali-metal-induced (1×2) Ni(110) and c(2×4) Ni(110)/K/CO surface reconstructions Physical Review B. 47: 16513-16520. PMID 10006087 DOI: 10.1103/Physrevb.47.16513 |
0.343 |
|
| 1993 |
Zhou J, Lu H, Gustafsson T, Garfunkel E. Anomalously weak adsorption of Cu on SiO2 and MgO surfaces Surface Science Letters. 293: L887-L892. DOI: 10.1016/0167-2584(93)90227-A |
0.31 |
|
| 1993 |
Zhou JB, Gustafsson T, Lin RF, Garfunkel E. Medium energy ion scattering study of Ni on ultrathin films of SiO2 on Si(111) Surface Science. 284: 67-76. DOI: 10.1016/0039-6028(93)90525-O |
0.497 |
|
| 1992 |
Jiang QT, Gustafsson T, Häberle P, Zehner DM. Missing-row surface reconstruction of Au(113) induced by adsorbed calcium atoms. Physical Review B. 45: 14256-14263. PMID 10001551 DOI: 10.1103/Physrevb.45.14256 |
0.392 |
|
| 1992 |
Jiang QT, Statiris P, Gustafsson T, Häberle P, Zehner DM. Ion scattering study of the adatom induced missing-row reconstructions of Ni(110) and Au(113) Journal of Vacuum Science and Technology. 10: 2197-2201. DOI: 10.1116/1.578004 |
0.406 |
|
| 1992 |
Jiang Q, Fenter P, Gustafsson T. Surface vibrations of clean and S covered Cu (001) Vacuum. 43: 1123-1124. DOI: 10.1016/0042-207X(92)90348-Z |
0.554 |
|
| 1992 |
Chester M, Gustafsson T. Study of the geometric structure and vibrational amplitudes at the Si(111)−(√3 × √3) R30°−Ga surface Surface Science. 264: 33-44. DOI: 10.1016/0039-6028(92)90162-Y |
0.413 |
|
| 1991 |
Jiang QT, Fenter P, Gustafsson T. Geometric structure and surface vibrations of Cu(001) determined by medium-energy ion scattering. Physical Review B. 44: 5773-5778. PMID 9998422 DOI: 10.1103/Physrevb.44.5773 |
0.599 |
|
| 1991 |
Fenter P, Gustafsson T. Structure and morphology of Au grown on Ag(110). Physical Review B. 43: 12195-12204. PMID 9997016 DOI: 10.1103/Physrevb.43.12195 |
0.596 |
|
| 1991 |
Chester M, Gustafsson T. Geometric structure of the Si(111)−(√3 × √3)R30°-Au surface Surface Science. 256: 135-146. DOI: 10.1016/0039-6028(91)91209-G |
0.454 |
|
| 1990 |
Jiang QT, Fenter P, Gustafsson T. Geometric structure of p(2×2)-S/Cu(001) determined by medium-energy ion scattering Physical Review B. 42: 9291-9298. PMID 9995166 DOI: 10.1103/Physrevb.42.9291 |
0.569 |
|
| 1990 |
Chester M, Gustafsson T. Structural study of the Si(111)-(3 × 3) R30°-Au surface using medium-energy ion scattering Physical Review B. 42: 9233-9236. PMID 9995156 DOI: 10.1103/Physrevb.42.9233 |
0.388 |
|
| 1990 |
Smith NV, Chen CT, Bartynski RA, Gustafsson T. Identifications of empty surface states on Au(110): Comment on 'the 1 × 1 to 1 × 2 phase transition of Au(110): An inverse photoemission study by R. Drube, V. Dose, H. Derks and W. Heiland' Surface Science. 227. DOI: 10.1016/S0039-6028(05)80003-2 |
0.322 |
|
| 1990 |
Gustafsson T, Fenter P, Häberle P. Medium-energy ion scattering studies of the structure of some reconstructed metal surfaces Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 45: 398-402. DOI: 10.1016/0168-583X(90)90860-W |
0.634 |
|
| 1990 |
Gustafsson T, Fenter P, Häberle P. Determination of the geometric structure of alkali induced reconstructions of Au(110) Vacuum. 41: 309-310. DOI: 10.1016/0042-207X(90)90344-X |
0.561 |
|
| 1989 |
Garfunkel E, Rudd G, Novak D, Wang S, Ebert G, Greenblatt M, Gustafsson T, Garofalini S. Scanning Tunneling Microscopy and Nanolithography on a Conducting Oxide, Rb0.3MoO3 Science. 246: 99-100. PMID 17837766 DOI: 10.1126/Science.246.4926.99 |
0.363 |
|
| 1989 |
Häberle P, Gustafsson T. Medium-energy ion-scattering analysis of the c (2×2) structure induced by K on Au(110) Physical Review B. 40: 8218-8224. PMID 9991276 DOI: 10.1103/Physrevb.40.8218 |
0.428 |
|
| 1989 |
Häberle P, Fenter P, Gustafsson T. Structure of the Cs-induced (1×3) reconstruction of Au(110) Physical Review B. 39: 5810-5818. PMID 9949000 DOI: 10.1103/Physrevb.39.5810 |
0.432 |
|
| 1988 |
Fenter P, Gustafsson T. Structural analysis of the Pt(110)-( 1×2 ) surface using medium-energy ion scattering Physical Review B. 38: 10197-10204. PMID 9945871 DOI: 10.1103/Physrevb.38.10197 |
0.418 |
|
| 1987 |
Copel M, Fenter P, Gustafsson T. The reconstruction and relaxation of Ir(110) and Au(110) surfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 742-746. DOI: 10.1116/1.574290 |
0.618 |
|
| 1987 |
Bartynski RA, Gustafsson T. Unoccupied surface states on Ta(100) observed with inverse photoemission Physical Review B. 35: 939-945. DOI: 10.1103/Physrevb.35.939 |
0.321 |
|
| 1986 |
Yalisove SM, Graham WR, Adams ED, Copel M, Gustafsson T. Multilayer relaxations of Ni(110): New medium energy ion scattering results Surface Science Letters. 171: 400-414. DOI: 10.1016/0167-2584(86)91145-X |
0.316 |
|
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