| Year |
Citation |
Score |
| 2019 |
Kim TJ, Park HG, Byun JS, Le VL, Nguyen HT, Nguyen XA, Kim YD, Song JD, Aspnes DE. Dielectric Functions and Critical Points of GaAsSb Alloys Journal of the Korean Physical Society. 74: 595-599. DOI: 10.3938/Jkps.74.595 |
0.391 |
|
| 2019 |
Le VL, Kim TJ, Kim YD, Aspnes DE. Combined interpolation, scale change, and noise reduction in spectral analysis Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 52903. DOI: 10.1116/1.5120358 |
0.323 |
|
| 2016 |
Morales D, Stoute NA, Yu Z, Aspnes DE, Dickey MD. Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides Applied Physics Letters. 109: 091905. DOI: 10.1063/1.4961910 |
0.774 |
|
| 2015 |
Aspnes DE. Bond models in linear and nonlinear optics Proceedings of Spie - the International Society For Optical Engineering. 9584. DOI: 10.1002/Pssb.200983937 |
0.345 |
|
| 2014 |
Aspnes DE. Spectroscopic ellipsometry - Past, present, and future Thin Solid Films. 571: 334-344. DOI: 10.1016/J.Tsf.2014.03.056 |
0.321 |
|
| 2014 |
Aspnes DE, Choi SG. Combined direct- and reciprocal-space approach for converting spectra to energy scales with negligible loss of information Thin Solid Films. 571: 506-508. DOI: 10.1016/J.Tsf.2013.11.028 |
0.307 |
|
| 2014 |
Kim TJ, Hwang SY, Byun JS, Aspnes DE, Lee EH, Song JD, Liang CT, Chang YC, Park HG, Choi J, Kim JY, Kang YR, Park JC, Kim YD. Dielectric functions and interband transitions of InxAl 1 - XP alloys Current Applied Physics. 14: 1273-1276. DOI: 10.1016/J.Cap.2014.06.026 |
0.401 |
|
| 2014 |
Kim TJ, Byun JS, Hwang SY, Park HG, Kang YR, Park JC, Kim YD, Aspnes DE. Parameterization of the dielectric functions of InGaSb alloys Current Applied Physics. 14: 768-771. DOI: 10.1016/J.Cap.2014.03.010 |
0.322 |
|
| 2013 |
Aspnes DE. Spectroscopic ellipsometry - A perspective Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4809747 |
0.362 |
|
| 2013 |
Kim TJ, Yoon JJ, Byun JS, Hwang SY, Aspnes DE, Shin SH, Song JD, Liang CT, Chang YC, Barange NS, Kim JY, Kim YD. Interband transitions and dielectric functions of InGaSb alloys Applied Physics Letters. 102. DOI: 10.1063/1.4795622 |
0.368 |
|
| 2013 |
Hwang SY, Kim TJ, Byun JS, Barange NS, Diware MS, Kim YD, Aspnes DE, Yoon JJ, Song JD. Analytic representation of the dielectric functions of InAs xSb1 - X alloys in the parametric model Thin Solid Films. 547: 276-279. DOI: 10.1016/J.Tsf.2012.11.088 |
0.341 |
|
| 2012 |
Gokce B, Gundogdu K, Aspnes DE. Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: A second-harmonic-generation investigation Journal of the Korean Physical Society. 60: 1685-1689. DOI: 10.3938/Jkps.60.1685 |
0.337 |
|
| 2012 |
Nelson F, Sandin A, Dougherty DB, Aspnes DE, Rowe JE, Diebold AC. Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)-Si by spectroscopic ellipsometry, Auger spectroscopy, and STM Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4726199 |
0.3 |
|
| 2011 |
Ghong TH, Han S-, Chung J-, Byun JS, Kim YD, Aspnes DE. Roughness Analysis of the Critical Dimension by Using Spectroscopic Ellipsometry Journal of the Korean Physical Society. 58: 1426-1428. DOI: 10.3938/Jkps.58.1426 |
0.347 |
|
| 2011 |
Gokce B, Gundogdu K, Adles EJ, Aspnes DE. Back-reflection second-harmonic generation of (111)Si: Theory and experiment Journal of the Korean Physical Society. 58: 1237-1243. DOI: 10.3938/Jkps.58.1237 |
0.358 |
|
| 2011 |
Choi SG, Van Schilfgaarde M, Aspnes DE, Norman AG, Olson JM, Peshek TJ, Levi DH. Above-band-gap dielectric functions of ZnGeAs2: Ellipsometric measurements and quasiparticle self-consistent GW calculations Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.235210 |
0.382 |
|
| 2011 |
Gokce B, Aspnes DE, Lucovsky G, Gundogdu K. Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping Applied Physics Letters. 98. DOI: 10.1063/1.3537809 |
0.335 |
|
| 2010 |
Gokce B, Adles EJ, Aspnes DE, Gundogdu K. Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si. Proceedings of the National Academy of Sciences of the United States of America. 107: 17503-8. PMID 20876145 DOI: 10.1073/Pnas.1011295107 |
0.35 |
|
| 2010 |
Ghong TH, Han SH, Chung JM, Byun JS, Kim TJ, Aspnes DE, Kim YD, Park IH, Kim YW. Nondestructive analysis of coated periodic nanostructures from optical data. Optics Letters. 35: 733-5. PMID 20195335 DOI: 10.1364/Ol.35.000733 |
0.319 |
|
| 2010 |
Liu X, Aspnes DE. Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 583-589. DOI: 10.1116/1.3442805 |
0.371 |
|
| 2010 |
Adles EJ, Aspnes DE. Chemical-etch-assisted growth of epitaxial zinc oxide Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 689-692. DOI: 10.1116/1.3305814 |
0.326 |
|
| 2010 |
Yoon JJ, Kim TJ, Jung YW, Aspnes DE, Kim YD, Kim HJ, Chang YC, Shin SH, Song JD. Dielectric functions and interband transitions of In1-xAl x Sb alloys Applied Physics Letters. 97. DOI: 10.1063/1.3488827 |
0.387 |
|
| 2009 |
Franzen S, Rhodes C, Cerruti M, Gerber RW, Losego M, Maria JP, Aspnes DE. Plasmonic phenomena in indium tin oxide and ITO-Au hybrid films. Optics Letters. 34: 2867-9. PMID 19756132 DOI: 10.1364/Ol.34.002867 |
0.323 |
|
| 2009 |
Kim TJ, Yoon JJ, Hwang SY, Aspnes DE, Kim YD, Kim HJ, Chang YC, Song JD. Interband transitions of InAsx Sb1-x alloy films Applied Physics Letters. 95. DOI: 10.1063/1.3216056 |
0.306 |
|
| 2009 |
Arwin H, Aspnes DE. Follow the light: Ellipsometry and polarimetry Physics Today. 62: 70-71. DOI: 10.1063/1.3141950 |
0.545 |
|
| 2008 |
Adles EJ, Aspnes DE. Application of the anisotropic bond model to second-harmonic generation from amorphous media Physical Review B. 77: 165102. DOI: 10.1103/Physrevb.77.165102 |
0.349 |
|
| 2008 |
Liu X, Aspnes DE. Thickness inhomogenities in the organometallic chemical vapor deposition of GaP Applied Physics Letters. 93. DOI: 10.1063/1.3029742 |
0.37 |
|
| 2008 |
Jung YW, Kim TJ, Yoon JJ, Kim YD, Aspnes DE. Model dielectric functions for Alx Ga1-xAs alloys of arbitrary compositions Journal of Applied Physics. 104. DOI: 10.1063/1.2952536 |
0.352 |
|
| 2008 |
Yoon JJ, Ghong TH, Byun JS, Kim YD, Aspnes DE, Kim HJ, Chang YC, Song JD. Optical properties of Inx Al1-x As alloy films Applied Physics Letters. 92. DOI: 10.1063/1.2909546 |
0.379 |
|
| 2008 |
Rhodes C, Cerruti M, Efremenko A, Losego M, Aspnes DE, Maria JP, Franzen S. Dependence of plasmon polaritons on the thickness of indium tin oxide thin films Journal of Applied Physics. 103. DOI: 10.1063/1.2908862 |
0.32 |
|
| 2008 |
Ghong TH, Kim TJ, Jung YW, Kim YD, Aspnes DE. Overlayer effects in the critical-point analysis of ellipsometric spectra: Application to Inx Ga1-x As alloys Journal of Applied Physics. 103. DOI: 10.1063/1.2902502 |
0.353 |
|
| 2008 |
Kim TJ, Yoon JJ, Kim YD, Aspnes DE, Klein MV, Ko DS, Kim YW, Elarde VC, Coleman JJ. Analysis of interface layers by spectroscopic ellipsometry Applied Surface Science. 255: 640-642. DOI: 10.1016/J.Apsusc.2008.07.005 |
0.331 |
|
| 2008 |
Liu X, Kim IK, Aspnes DE. Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1312-1315. DOI: 10.1002/Pssc.200777896 |
0.385 |
|
| 2008 |
Asar M, Aspnes DE. The nearly aligned rotating-monoplate compensator Physica Status Solidi (a) Applications and Materials Science. 205: 739-742. DOI: 10.1002/Pssa.200777871 |
0.708 |
|
| 2008 |
Choi SG, Aspnes DE, Stoute NA, Kim YD, Kim HJ, Chang YC, Palmstrøm CJ. Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters Physica Status Solidi (a) Applications and Materials Science. 205: 884-887. DOI: 10.1002/Pssa.200777848 |
0.769 |
|
| 2007 |
Liu X, Kim IK, Aspnes DE. Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1448-1452. DOI: 10.1116/1.2750345 |
0.394 |
|
| 2007 |
Kim TJ, Ghong TH, Kim YD, Aspnes DE, Klein MV, Ko DS, Kim YW, Elarde VC, Coleman JJ. Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry Journal of Applied Physics. 102. DOI: 10.1063/1.2781519 |
0.352 |
|
| 2007 |
Choi SG, Palmstrøm CJ, Kim YD, Aspnes DE, Kim HJ, Chang YC. Dielectric functions and electronic structure of InAs xP 1-x films on InP Applied Physics Letters. 91. DOI: 10.1063/1.2766682 |
0.362 |
|
| 2007 |
Kim IK, Aspnes DE. Analytic determination of n, κ, and d of an absorbing film from polarimetric data in the thin-film limit Journal of Applied Physics. 101. DOI: 10.1063/1.2434004 |
0.344 |
|
| 2007 |
Lucovsky G, Fulton CC, Ju BS, Stoute NA, Seo H, Aspnes DE, Lüning J. Corrigendum to: "Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3". [Radiat. Phys. Chem. 75 (2006) 1591-1595] (DOI:10.1016/j.radphyschem.2006.05.004) Radiation Physics and Chemistry. 76: 907. DOI: 10.1016/J.Radphyschem.2007.01.001 |
0.768 |
|
| 2006 |
Brinkley MK, Powell GD, Aspnes DE. Systematic approach for analyzing reflectance-difference spectra: Application to silicon-dielectric interfaces Applied Physics Letters. 88. DOI: 10.1063/1.2204844 |
0.756 |
|
| 2006 |
Lucovsky G, Fulton CC, Ju BS, Stoute NA, Tao S, Aspnes DE, Lüning J. Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 Radiation Physics and Chemistry. 75: 1591-1595. DOI: 10.1016/J.Radphyschem.2006.05.004 |
0.777 |
|
| 2005 |
Choi SG, Srivastava SK, Palmstrøm CJ, Kim YD, Cooper SL, Aspnes DE. Optical properties of (GaSb) 3n(AlSb) n (1≤n≤5) superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1149-1153. DOI: 10.1116/1.1881552 |
0.328 |
|
| 2005 |
Peng HJ, Adles EJ, Wang JFT, Aspnes DE. Relative bulk and interface contributions to optical second-harmonic generation in silicon Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.205203 |
0.379 |
|
| 2005 |
Choi SG, Palmstrøm CJ, Kim YD, Cooper SL, Aspnes DE. Dielectric functions of Al x Ga 1-x Sb (0.00≤x≤0.39) alloys from 1.5 to 6.0 eV Journal of Applied Physics. 98. DOI: 10.1063/1.2134890 |
0.378 |
|
| 2005 |
Lucovsky G, Hong JG, Fulton CC, Stoute NA, Zou Y, Nemanich RJ, Aspnes DE, Ade H, Schlom DG. Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Microelectronics Reliability. 45: 827-830. DOI: 10.1016/J.Microrel.2004.11.038 |
0.774 |
|
| 2005 |
Aspnes DE. Real-time diagnostics for metalorganic vapor phase epitaxy Physica Status Solidi (B) Basic Research. 242: 2551-2560. DOI: 10.1002/Pssb.200541109 |
0.309 |
|
| 2004 |
Aspnes DE. Optimizing precision of rotating-analyzer and rotating-compensator ellipsometers. Journal of the Optical Society of America. a, Optics, Image Science, and Vision. 21: 403-10. PMID 15005405 DOI: 10.1364/Josaa.21.000403 |
0.318 |
|
| 2004 |
Kim S, Flock KL, Asar M, Kim IK, Aspnes DE. Real-time characterization of GaSb homo- and heteroepitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2233-2239. DOI: 10.1116/1.1771669 |
0.739 |
|
| 2004 |
Peng HJ, Aspnes DE. Calculation of bulk third-harmonic generation from crystalline Si with the simplified bond hyperpolarizability model [60] Physical Review B - Condensed Matter and Materials Physics. 70: 1-8. DOI: 10.1103/Physrevb.70.165312 |
0.336 |
|
| 2004 |
Ghong TH, Kim TJ, Kim YD, Aspnes DE. Spectroscopic ellipsometric analysis of interfaces: Comparison of alloy and effective-medium-approximation approaches to a CdMgTe multilayer system Applied Physics Letters. 85: 946-948. DOI: 10.1063/1.1779965 |
0.372 |
|
| 2004 |
Ihn YS, Kim TJ, Kim YD, Aspnes DE, Kossut J. Optical properties of Cd 1-xMg xTe (x=0.00, 0.23, 0.31, and 0.43) alloy films Applied Physics Letters. 84: 693-695. DOI: 10.1063/1.1639506 |
0.379 |
|
| 2004 |
Flock K, Kim SJ, Asar M, Kim IK, Aspnes DE. Integrated rotating-compensator polarimeter for real-time measurements and analysis of organometallic chemical vapor deposition Thin Solid Films. 455: 639-644. DOI: 10.1016/J.Tsf.2004.01.069 |
0.744 |
|
| 2004 |
Ihn YS, Kim TJ, Ghong TH, Kim YD, Aspnes DE, Kossut J. Parametric modeling of the dielectric functions of Cd1-xMg xTe alloy films Thin Solid Films. 455: 222-227. DOI: 10.1016/J.Tsf.2004.01.015 |
0.37 |
|
| 2004 |
Asar M, Aspnes DE. Optical anisotropy relevant to rotating-compensator polarimeters: Application to the monoplate retarder Thin Solid Films. 455: 50-53. DOI: 10.1016/J.Tsf.2003.12.044 |
0.717 |
|
| 2004 |
Mori T, Aspnes DE. Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system Thin Solid Films. 455: 33-38. DOI: 10.1016/J.Tsf.2003.12.037 |
0.322 |
|
| 2003 |
Hansen JK, Peng HJ, Aspnes DE. Application of the simplified bond-hyperpolarizability model to fourth-harmonic generation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1798-1803. DOI: 10.1116/1.1593057 |
0.34 |
|
| 2003 |
Aspnes DE, Hansen JK, Peng HJ, Powell GD, Wang JFT. Simplified bond-hyperpolarizability model of second- and fourth-harmonic generation: Application to Si-SiO2 interfaces Physica Status Solidi (B) Basic Research. 240: 509-517. DOI: 10.1002/Pssb.200303825 |
0.759 |
|
| 2002 |
Edwards NV, Lindquist OPA, Madsen LD, Zollner S, Järrehdahl K, Cobet C, Peters S, Esser N, Konkar A, Aspnes DE. Determination and critical assessment of the optical properties of common substrate materials used in III-V nitride heterostructures with vacuum ultraviolet spectroscopic ellipsometry Materials Research Society Symposium - Proceedings. 693: 509-514. DOI: 10.1557/Proc-693-I8.3.1 |
0.37 |
|
| 2002 |
Wang JFT, Powell GD, Johnson RS, Lucovsky G, Aspnes DE. Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1699-1705. DOI: 10.1116/1.1493783 |
0.739 |
|
| 2002 |
Powell GD, Wang J-, Aspnes DE. Simplified bond-hyperpolarizability model of second harmonic generation Physical Review B. 65: 205320. DOI: 10.1103/Physrevb.65.205320 |
0.375 |
|
| 2002 |
Kim TJ, Ihn YS, Kim YD, Kim SJ, Aspnes DE, Yao T, Shim K, Koo BH. Pseudodielectric functions of InGaAs alloy films grown on InP Applied Physics Letters. 81: 2367-2369. DOI: 10.1063/1.1509093 |
0.366 |
|
| 2002 |
Blickle V, Flock K, Dietz N, Aspnes DE. Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV Applied Physics Letters. 81: 628-630. DOI: 10.1063/1.1492022 |
0.339 |
|
| 2001 |
Lindquist OPA, Järrendahl K, Arwin H, Peters S, Zettler JT, Cobet C, Esser N, Aspnes DE, Henry A, Edwards NV. Ordinary and extra-ordinary dielectric function of 4H- and 6H-SiC in the 0.7 to 9.0 eV photon energy range Materials Research Society Symposium - Proceedings. 640: H5.24.1-H5.24.6. DOI: 10.1557/Proc-640-H5.24 |
0.542 |
|
| 2001 |
Lindquist OPA, Järrendahl K, Peters S, Zettler JT, Cobet C, Esser N, Aspnes DE, Henry A, Edwards NV. Ordinary and extraordinary dielectric functions of 4H- and 6H-SiC from 3.5 to 9.0 eV Applied Physics Letters. 78: 2715-2717. DOI: 10.1063/1.1369617 |
0.304 |
|
| 2001 |
Yoo SD, Aspnes DE. Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space Journal of Applied Physics. 89: 8183-8192. DOI: 10.1063/1.1368391 |
0.31 |
|
| 2001 |
Aspnes DE. Linear and nonlinear optical spectroscopy of surfaces and interfaces Physica Status Solidi (a) Applied Research. 188: 1353-1360. DOI: 10.1002/1521-396X(200112)188:4<1353::Aid-Pssa1353>3.0.Co;2-M |
0.388 |
|
| 2001 |
Ebert M, Bell KA, Flock K, Aspnes DE. Investigation and control of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy Physica Status Solidi (a) Applied Research. 184: 79-87. DOI: 10.1002/1521-396X(200103)184:1<79::Aid-Pssa79>3.0.Co;2-B |
0.429 |
|
| 2000 |
Edwards NV, Madsen LD, Robbie K, Powell GD, Järrendahl K, Cobet C, Esser N, Richter W, Aspnes DE. Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation Materials Science Forum. 338: 1033-1036. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1033 |
0.755 |
|
| 2000 |
Bell KA, Ebert M, Yoo SD, Flock K, Aspnes DE. Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1184-1189. DOI: 10.1116/1.582323 |
0.4 |
|
| 2000 |
Rossow U, Mantese L, Aspnes DE. Surface-induced optical anisotropy of Si and Ge Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2229-2231. DOI: 10.1116/1.1306309 |
0.422 |
|
| 2000 |
Lastras-Martínez LF, Ruf T, Konuma M, Cardona M, Aspnes DE. Isotopic effects on the dielectric response of Si around the E 1 gap Physical Review B. 61: 12946-12951. DOI: 10.1103/Physrevb.61.12946 |
0.327 |
|
| 2000 |
Lee H, Kim IY, Powell J, Aspnes DE, Lee S, Peiris F, Furdyna JK. Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys Journal of Applied Physics. 88: 878-882. DOI: 10.1063/1.373750 |
0.344 |
|
| 2000 |
Choi SG, Kim YD, Yoo SD, Aspnes DE, Woo DH, Kim SH. Optical properties of AlxGa1−xP (0⩽x⩽0.52) alloys Journal of Applied Physics. 87: 1287-1290. DOI: 10.1063/1.372011 |
0.395 |
|
| 2000 |
Koo MS, Kim TJ, Lee MS, Oh MS, Kim YD, Yoo SD, Aspnes DE, Jonker BT. Dielectric function of epitaxial ZnSe films Applied Physics Letters. 77: 3364-3366. DOI: 10.1063/1.1328098 |
0.356 |
|
| 2000 |
Ebert M, Bell KA, Yoo SD, Flock K, Aspnes DE. In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy Thin Solid Films. 364: 22-27. DOI: 10.1016/S0040-6090(99)00920-7 |
0.443 |
|
| 2000 |
Edwards NV, Bremser MD, Batchelor AD, Buyanova IA, Madsen LD, Yoo SD, Wethkamp T, Wilmers K, Cobet C, Esser N, Davis RF, Aspnes DE, Monemar B. Optical characterization of wide bandgap semiconductors Thin Solid Films. 364: 98-106. DOI: 10.1016/S0040-6090(99)00903-7 |
0.393 |
|
| 2000 |
Edwards NV, Järrendahl K, Aspnes DE, Robbie K, Powell GD, Cobet C, Esser N, Richter W, Madsen LD. Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry Surface Science. 464: L703-L707. DOI: 10.1016/S0039-6028(00)00689-0 |
0.754 |
|
| 2000 |
Bell KA, Ebert M, Yoo SD, Flock K, Aspnes DE. Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor Journal of Electronic Materials. 29: 106-111. DOI: 10.1007/S11664-000-0104-6 |
0.4 |
|
| 2000 |
Aspnes DE, Mantese L, Bell KA, Rossow U. Coherence effects and time dependences of the optical response of surfaces and interfaces of optically absorbing materials Physica Status Solidi (B) Basic Research. 220: 709-715. DOI: 10.1002/1521-3951(200007)220:1<709::Aid-Pssb709>3.0.Co;2-D |
0.342 |
|
| 2000 |
Yoo SD, Aspnes DE, Lastras-Martínez LF, Ruf T, Konuma M, Cardona M. High‐Resolution Spectroscopy with Reciprocal‐Space Analysis: Application to Isotopically Pure Si Physica Status Solidi B-Basic Solid State Physics. 220: 117-125. DOI: 10.1002/1521-3951(200007)220:1<117::Aid-Pssb117>3.0.Co;2-4 |
0.329 |
|
| 2000 |
Rossow U, Aspnes DE. Characterization of AlxGa1-xN-compound layers by reflectance difference spectroscopy Physica Status Solidi (a) Applied Research. 177: 157-163. DOI: 10.1002/(Sici)1521-396X(200001)177:1<157::Aid-Pssa157>3.0.Co;2-P |
0.374 |
|
| 1999 |
Edwards NV, Batchelor AD, Buyanova IA, Madsen LD, Bremser MD, Davis RF, Aspnes DE, Monemar B. Relaxation phenomena in GaN/ AIN/ 6H-SIC heterostructures Materials Research Society Symposium - Proceedings. 537: G3.78. DOI: 10.1557/S1092578300002830 |
0.311 |
|
| 1999 |
Mantese L, Xue QK, Sakurai T, Aspnes DE. Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy Journal of Vacuum Science and Technology. 17: 1652-1656. DOI: 10.1116/1.581867 |
0.414 |
|
| 1999 |
Cardona M, Lastras-Martínez LF, Aspnes DE. Comment on “Ab InitioCalculation of Excitonic Effects in the Optical Spectra of Semiconductors” Physical Review Letters. 83: 3970-3970. DOI: 10.1103/Physrevlett.83.3970 |
0.313 |
|
| 1999 |
Mantese L, Bell KA, Aspnes DE, Rossow U. Photon-induced localization in optically absorbing materials Physics Letters, Section a: General, Atomic and Solid State Physics. 253: 93-97. DOI: 10.1016/S0375-9601(98)00953-0 |
0.35 |
|
| 1999 |
Rossow U, Aspnes DE, Ambacher O, Cimalla V, Edwards NV, Bremser M, Davis RF, Schaefer JA, Stutzmann M. Reflectance difference spectroscopy characterization of AlxGa1 xN-compound layers Physica Status Solidi (B) Basic Research. 216: 215-220. DOI: 10.1002/(Sici)1521-3951(199911)216:1<215::Aid-Pssb215>3.0.Co;2-3 |
0.332 |
|
| 1999 |
Rossow U, Mantese L, Aspnes DE, Bell KA, Ebert M. Linear optical properties of Si surfaces and nanostructures Physica Status Solidi (B) Basic Research. 215: 725-729. DOI: 10.1002/(Sici)1521-3951(199909)215:1<725::Aid-Pssb725>3.0.Co;2-C |
0.379 |
|
| 1999 |
Mantese L, Xue QK, Sakurai T, Aspnes DE. Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 1652-1656. |
0.302 |
|
| 1998 |
Aspnes DE, Mantese L, Bell KA, Rossow U. Photon-induced localization and final-state correlation effects in optically absorbing materials Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2367-2372. DOI: 10.1116/1.590176 |
0.376 |
|
| 1998 |
Leng J, Opsal J, Chu H, Senko M, Aspnes DE. Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1654-1657. DOI: 10.1116/1.581137 |
0.345 |
|
| 1998 |
Aspnes DE, Dietz N. Optical approaches for controlling epitaxial growth Applied Surface Science. 130: 367-376. DOI: 10.1016/S0169-4332(98)00085-3 |
0.379 |
|
| 1998 |
Rossow U, Mantese L, Aspnes DE. Lineshapes of surface induced optical anisotropy spectra measured by RDS/RAS Applied Surface Science. 123: 237-242. DOI: 10.1016/S0169-4332(97)00544-8 |
0.38 |
|
| 1998 |
Woo DH, Han IK, Choi WJ, Lee S, Kim HJ, Lee JI, Kim SH, Kang KN, Choi SG, Kim YD, Yoo SD, Aspnes DE, Rhee SJ, Woo JC. Optical characterization of GaAs/AlAs short period superlattices Microelectronic Engineering. 43: 265-270. DOI: 10.1016/S0167-9317(98)00173-7 |
0.345 |
|
| 1998 |
Mantese L, Bell KA, Rossow U, Aspnes DE. Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states Thin Solid Films. 313: 557-560. DOI: 10.1016/S0040-6090(97)00883-3 |
0.41 |
|
| 1998 |
Edwards NV, Yoo SD, Bremser MD, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE. Spectroscopic ellipsometry and low-temperature reflectance: Complementary analysis of GaN thin films Thin Solid Films. 313: 187-192. DOI: 10.1016/S0040-6090(97)00815-8 |
0.372 |
|
| 1998 |
Bell KA, Mantese L, Rossow U, Aspnes DE. Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry Thin Solid Films. 313: 161-166. DOI: 10.1016/S0040-6090(97)00804-3 |
0.427 |
|
| 1998 |
Yoo SD, Edwards NV, Aspnes DE. Analysis of optical spectra by Fourier methods Thin Solid Films. 313: 143-148. DOI: 10.1016/S0040-6090(97)00801-8 |
0.349 |
|
| 1998 |
Leng J, Opsal J, Chu H, Senko M, Aspnes DE. Analytic representations of the dielectric functions of materials for device and structural modeling Thin Solid Films. 313: 132-136. DOI: 10.1016/S0040-6090(97)00799-2 |
0.357 |
|
| 1998 |
Opsal J, Fanton J, Chen J, Leng J, Wei L, Uhrich C, Senko M, Zaiser C, Aspnes DE. Broadband spectral operation of a rotating-compensator ellipsometer Thin Solid Films. 313: 58-61. DOI: 10.1016/S0040-6090(97)00769-4 |
0.325 |
|
| 1998 |
Aspnes DE, Mantese L, Bell KA, Rossow U. Many-body and correlation effects in surface and interface spectra of optically absorbing materials Physica Status Solidi (a) Applied Research. 170: 199-210. DOI: 10.1002/(Sici)1521-396X(199812)170:2<199::Aid-Pssa199>3.0.Co;2-# |
0.416 |
|
| 1997 |
Bremser MD, Perry WG, Zheleva T, Edwards NV, Nam OH, Parikh N, Aspnes DE, Davis RF. Growth, doping and characterization of AlxGa1 - XN thin film alloys on 6H-SiC(0001) substrates Diamond and Related Materials. 6: 196-201. DOI: 10.1557/S1092578300001800 |
0.371 |
|
| 1997 |
Hinds BJ, Aspnes DE, Lucovsky G. Low pH Chemical Etch Route for Smooth H-Terminated Si(100) And
Study Of Subsequent Chemical Stability Mrs Proceedings. 477. DOI: 10.1557/Proc-477-191 |
0.369 |
|
| 1997 |
Rossow U, Edwards NV, Bremser MD, Kern RS, Liu H, Davis RF, Aspnes DE. In-plane optical anisotropies of AlxGa1-xN films in their regions of transparency Materials Research Society Symposium - Proceedings. 449: 835-840. DOI: 10.1557/Proc-449-835 |
0.35 |
|
| 1997 |
Edwards NV, Yoo SD, Bremser MD, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE. Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters Materials Research Society Symposium - Proceedings. 449: 781-786. DOI: 10.1557/Proc-449-781 |
0.347 |
|
| 1997 |
Aspnes DE, Dietz N, Rossow U, Bachmann KJ. Multilevel approaches toward monitoring and control of semiconductor epitaxy Materials Research Society Symposium - Proceedings. 448: 451-462. DOI: 10.1557/Proc-448-451 |
0.364 |
|
| 1997 |
Bell KA, Mantese L, Rossow U, Aspnes DE. Surface and interface effects on ellipsometric spectra of crystalline Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1205-1211. DOI: 10.1116/1.589440 |
0.418 |
|
| 1997 |
Mantese L, Bell KA, Rossow U, Aspnes DE. Evidence of near-surface localization of excited electronic states in crystalline Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1196-1200. DOI: 10.1116/1.589438 |
0.434 |
|
| 1997 |
Edwards NV, Yoo SD, Bremser MD, Weeks TW, Nam OH, Davis RF, Liu H, Stall RA, Horton MN, Perkins NR, Kuech TF, Aspnes DE. Variation of GaN valence bands with biaxial stress and quantification of residual stress Applied Physics Letters. 70: 2001-2003. DOI: 10.1063/1.119089 |
0.313 |
|
| 1997 |
Kim YD, Choi SG, Klein MV, Yoo SD, Aspnes DE, Xin SH, Furdyna JK. Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAs Applied Physics Letters. 70: 610-612. DOI: 10.1063/1.118289 |
0.373 |
|
| 1997 |
Edwards NV, Yoo SD, Bremser MD, Zheleva T, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE. Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films Materials Science and Engineering B. 50: 134-141. DOI: 10.1016/S0921-5107(97)00151-7 |
0.367 |
|
| 1997 |
Bachmann KJ, Höpfner C, Sukidi N, Miller AE, Harris C, Aspnes DE, Dietz NA, Tran HT, Beeler S, Ito K, Banks HT, Rossow U. Molecular layer epitaxy by real-time optical process monitoring Applied Surface Science. 112: 38-47. DOI: 10.1016/S0169-4332(96)00975-0 |
0.362 |
|
| 1997 |
Aspnes DE. Real-time optical analysis and control of semiconductor epitaxy: Progress and opportunity Solid State Communications. 101: 85-92. DOI: 10.1016/S0038-1098(96)00447-4 |
0.354 |
|
| 1996 |
Lin JL, Jaloviar SG, Mantese L, Aspnes DE, McCaughan L, Lagally MG. Comparative study of the reflectance difference spectrum from Si(001) using reflectance difference spectroscopy/low-energy electron diffraction/ scanning tunneling microscopy Materials Research Society Symposium - Proceedings. 406: 401-405. DOI: 10.1557/Proc-406-401 |
0.391 |
|
| 1996 |
Rossow U, Mantese L, Frotscher U, Aspnes DE, Richter W. In-situ and ex-situ studies of silicon interfaces and nanostructures by ellipsometry and RDS Materials Research Society Symposium - Proceedings. 406: 371-376. DOI: 10.1557/Proc-406-371 |
0.428 |
|
| 1996 |
Dietz N, Rossow U, Aspnes DE, Sukidi N, Bachmann KJ. Real-time optical monitoring of GaxIn1-xGaP heterostructures on silicon Materials Research Society Symposium - Proceedings. 406: 127-132. DOI: 10.1557/Proc-406-127 |
0.371 |
|
| 1996 |
Rossow U, Frotscher U, Aspnes DE, Richter W. Towards a microscopic interpretation of the dielectric function of porous silicon Materials Research Society Symposium - Proceedings. 405: 209-214. DOI: 10.1557/Proc-405-209 |
0.382 |
|
| 1996 |
Edwards NV, Bremser MD, Weeks TW, Kern RS, Liu H, Stall RA, Wickenden AE, Doverspike K, Gaskill DK, Freitas JA, Rossow U, Davis RF, Aspnes DE. Analysis of strain in GaN on Al2O3 and 6H-SiC: near-bandedge phenomena Materials Research Society Symposium - Proceedings. 395: 405-410. DOI: 10.1557/Proc-395-405 |
0.315 |
|
| 1996 |
Mantese L, Aspnes DE. Interpretation of surface-induced optical anisotropy of clean, hydrogenated, and oxidized vicinal silicon surfaces investigated by reflectance-difference spectroscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3070-3074. DOI: 10.1116/1.589066 |
0.414 |
|
| 1996 |
Dietz N, Bachmann KJ, Aspnes DE. Optical investigations of surface processes in GaP heteroepitaxy on silicon under pulsed chemical beam epitaxy conditions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 3040-3046. DOI: 10.1116/1.589061 |
0.404 |
|
| 1996 |
Schmidt D, Niimi H, Hinds BJ, Aspnes DE, Lucovsky G. New approach to preparing smooth Si(100) surfaces: Characterization by spectroellipsometry and validation of Si/SiO2 interfaces properties in metal-oxide-semiconductor devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2812-2816. DOI: 10.1116/1.588838 |
0.381 |
|
| 1996 |
Mantese L, Rossow U, Aspnes DE. Surface-induced optical anisotropy of oxidized, clean, and hydrogenated vicinal Si(001) surfaces Applied Surface Science. 107: 35-41. DOI: 10.1016/S0169-4332(96)00479-5 |
0.41 |
|
| 1996 |
Rossow U, Frotscher U, Pietryga C, Aspnes DE, Richter W. Porous silicon layers as a model system for nanostructures Applied Surface Science. 104: 552-556. DOI: 10.1016/S0169-4332(96)00201-2 |
0.347 |
|
| 1996 |
Rossow U, Mantese L, Yasuda T, Aspnes DE. Hydrogenated and oxidized vicinal Si(001) surfaces investigated by reflectance-difference spectroscopy Applied Surface Science. 104: 137-140. DOI: 10.1016/S0169-4332(96)00134-1 |
0.39 |
|
| 1996 |
Rossow U, Frotscher U, Pietryga C, Richter W, Aspnes DE. Interpretation of the dielectric function of porous silicon layers Applied Surface Science. 102: 413-416. DOI: 10.1016/0169-4332(96)00089-X |
0.384 |
|
| 1996 |
Dietz N, Rossow U, Aspnes DE, Bachmann KJ. Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions Applied Surface Science. 102: 47-51. DOI: 10.1016/0169-4332(96)00017-7 |
0.365 |
|
| 1996 |
Kamiya I, Mantese L, Aspnes DE, Kisker DW, Fuoss PH, Stephenson GB, Brennan S. Optical characterization of surfaces during epitaxial growth using RDS and GIXS Journal of Crystal Growth. 163: 67-77. DOI: 10.1016/0022-0248(95)01051-3 |
0.383 |
|
| 1996 |
Dietz N, Rossow U, Aspnes DE, Bachmann KJ. Real-time optical monitoring of GaxIn1-xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions Journal of Crystal Growth. 164: 34-39. DOI: 10.1016/0022-0248(95)01018-1 |
0.416 |
|
| 1995 |
Edwards NV, Bremser MD, Weeks TW, Kern RS, Davis RF, Aspnes DE. Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry Applied Physics Letters. 2065. DOI: 10.1063/1.116881 |
0.321 |
|
| 1995 |
Aspnes DE. Observation and analysis of epitaxial growth with reflectance-difference spectroscopy Materials Science and Engineering B. 30: 109-119. DOI: 10.1016/0921-5107(94)09005-X |
0.367 |
|
| 1995 |
Dietz N, Rossow U, Aspnes D, Bachmann KJ. Real-time optical monitoring of epitaxial growth: Pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on Si Journal of Electronic Materials. 24: 1571-1576. DOI: 10.1007/Bf02676813 |
0.412 |
|
| 1995 |
Kisker DW, Stephenson GB, Kamiya I, Fuoss PH, Aspnes DE, Mantese L, Brennan S. Investigation of the relationship between reflectance difference spectroscopy and surface structure using grazing incidence x-ray scattering Physica Status Solidi (a) Applied Research. 152: 9-21. DOI: 10.1002/Pssa.2211520102 |
0.351 |
|
| 1994 |
Yasuda T, Aspnes DE, Lee DR, Biorkman CH, Lucovskv G. Optical anisotropy of singular and vicinal Si-SiO2 interfaces and H-terminated Si surfaces interfaces and H-terminated Si surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1152-1157. DOI: 10.1116/1.579183 |
0.427 |
|
| 1994 |
Aspnes DE. Real-time optical diagnostics for epitaxial growth Surface Science. 307: 1017-1027. DOI: 10.1116/1.577332 |
0.388 |
|
| 1994 |
Aspnes DE, Tamargo MC, Brasil MJSP, Nahory RE, Schwarz SA. As capture and the growth of ultrathin InAs layers on InP Applied Physics Letters. 64: 3279-3281. DOI: 10.1063/1.111309 |
0.307 |
|
| 1994 |
Bennett BR, del Alamo JA, Sinn MT, Peiró F, Cornet A, Aspnes DE. Origin of optical anisotropy in strained InxGa1-xAs/InP and InyAl1-yAs/InP heterostructures Journal of Electronic Materials. 23: 423-429. DOI: 10.1007/Bf02671224 |
0.369 |
|
| 1993 |
Aspnes D, Kamiya I, Tanaka H, Bhat R, Florez L, Harbison J, Quinn W, Tamargo M, Gregory S, Pudensi M, Schwarz S, Brasil M, Nahory R. Real-time optical diagnostics for measuring and controlling epitaxial growth Thin Solid Films. 225: 26-31. DOI: 10.1557/Proc-222-63 |
0.406 |
|
| 1993 |
Aspnes DE. Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements Applied Physics Letters. 62: 343-345. DOI: 10.1364/Josaa.10.000974 |
0.34 |
|
| 1993 |
Kamiya I, Tanaka H, Aspnes DE, Koza M, Bhat R. Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor deposition Applied Physics Letters. 63: 3206-3208. DOI: 10.1063/1.110200 |
0.364 |
|
| 1993 |
Hingerl K, Aspnes DE, Kamiya I, Florez LT. Relationship among reflectance-difference spectroscopy, surface photoabsorption, and spectroellipsometry Applied Physics Letters. 63: 885-887. DOI: 10.1063/1.109890 |
0.372 |
|
| 1993 |
Aspnes DE. New developments in spectroellipsometry: the challenge of surfaces Thin Solid Films. 233: 1-8. DOI: 10.1016/0040-6090(93)90050-Y |
0.371 |
|
| 1993 |
Hingerl K, Aspnes DE, Kamiya I. Comparison of reflectance difference spectroscopy and surface photoabsorption used for the investigation of anisotropic surfaces Surface Science. 686-692. DOI: 10.1016/0039-6028(93)91054-S |
0.402 |
|
| 1992 |
Kamiya I, Aspnes DE, Tanaka H, Florez LT, Harbison JP, Bhat R. Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition. Physical Review Letters. 68: 627-630. PMID 10045949 DOI: 10.1103/Physrevlett.68.627 |
0.321 |
|
| 1992 |
Tamargo MC, Brasil M, Nahory RE, Aspnes DE, Philips B, Hwang DM, Schwarz SA, Quinn WE. Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy Mrs Proceedings. 263. DOI: 10.1557/Proc-263-267 |
0.338 |
|
| 1992 |
Quinn WE, Aspnes DE, Brasil MJSP, Pudensi MA, Schwarz SA, Tamargo MC, Gregory S, Nahory RE. Real-time optical control of epitaxial III-V semiconductor composition and structure Semiconductors. 1676: 12-19. DOI: 10.1117/12.137665 |
0.332 |
|
| 1992 |
Aspnes DE. Atomic layer epitaxy on (001) GaAs: Real-time spectroscopy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10: 1725. DOI: 10.1116/1.586230 |
0.334 |
|
| 1992 |
Chang Y, Ren S, Aspnes DE. Optical anisotropy spectra of GaAs(001) surfaces Journal of Vacuum Science and Technology. 10: 1856-1862. DOI: 10.1116/1.577759 |
0.375 |
|
| 1992 |
Aspnes DE, Quinn WE, Tamargo MC, Gregory S, Schwarz SA, Pudensi MAA, Brasil MJSP, Nahory RE. Closed‐loop control of growth of semiconductor materials and structures by spectroellipsometry Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 10: 1840-1841. DOI: 10.1116/1.577756 |
0.324 |
|
| 1992 |
Aspnes DE, Quinn WE, Tamargo MC, Pudensi MAA, Schwarz SA, Brasil MJSP, Nahory RE, Gregory S. Growth of AlxGa1−xAs parabolic quantum wells by real‐time feedback control of composition Applied Physics Letters. 60: 1244-1246. DOI: 10.1063/1.107419 |
0.304 |
|
| 1992 |
Kamiya I, Tanaka H, Aspnes DE, Florez LT, Colas E, Harbison JP, Bhat R. Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition Applied Physics Letters. 60: 1238-1240. DOI: 10.1063/1.107417 |
0.342 |
|
| 1992 |
Kamiya I, Aspnes DE, Tanaka H, Florez LT, Colas E, Harbison JP, Bhat R. Real time in situ observation of (001) GaAs in OMCVD by reflectance difference spectroscopy Applied Surface Science. 534-543. DOI: 10.1016/0169-4332(92)90472-A |
0.379 |
|
| 1992 |
Aspnes D, Bhat R, Caneau C, Colas E, Florez L, Gregory S, Harbison J, Kamiya I, Aspnes D, Bhat R, Caneau C, Colas E, Florez L, Gregory S, Harbison J, et al. Optically monitoring and controlling epitaxial growth Journal of Crystal Growth. 120: 71-77. DOI: 10.1016/0022-0248(92)90366-Q |
0.302 |
|
| 1991 |
Tanaka H, Colas E, Kamiya I, Aspnes DE, Bhat R. Insitudetermination of free‐carrier concentrations by reflectance difference spectroscopy Applied Physics Letters. 59: 3443-3445. DOI: 10.1063/1.105672 |
0.336 |
|
| 1991 |
Colas E, Aspnes D, Bhat R, Studna A, Harbison J, Florez L, Koza M, Keramidas V. In situ monitoring of crystal growth by reflectance difference spectroscopy Journal of Crystal Growth. 107: 47-55. DOI: 10.1016/0022-0248(91)90433-6 |
0.361 |
|
| 1990 |
Aspnes DE. Optical response of microscopically rough surfaces. Physical Review. B, Condensed Matter. 41: 10334-10343. PMID 9993440 DOI: 10.1103/Physrevb.41.10334 |
0.361 |
|
| 1990 |
Aspnes DE. Surface dielectric anisotropies and phase diagrams of (001) GaAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8: 936. DOI: 10.1116/1.584946 |
0.357 |
|
| 1990 |
Aspnes DE, Quinn WE, Gregory S. Optical control of growth of AlxGa1−xAs by organometallic molecular beam epitaxy Applied Physics Letters. 57: 2707-2709. DOI: 10.1063/1.103806 |
0.341 |
|
| 1989 |
Aspnes DE, Bhat R, Colas E, Koza MA, Keramidas VG, Studna AA. Kinetic Limits to Growth on GaAs by Omcvd Mrs Proceedings. 145. DOI: 10.1557/Proc-145-99 |
0.307 |
|
| 1989 |
Aspnes DE, Studna AA, Florez LT, Chang YC, Harbison JP, Kelly MK, Farrell HH. Temporal and spectral dependences of the anisotropic dielectric responses of singular and vicinal (001) GaAs surfaces during interrupted molecular‐beam epitaxy growth Journal of Vacuum Science & Technology B. 7: 901-906. DOI: 10.1116/1.584577 |
0.377 |
|
| 1989 |
Studna AA, Aspnes DE, Florez LT, Wilkens BJ, Harbison JP, Ryan RE. Low‐retardance fused‐quartz window for real‐time optical applications in ultrahigh vacuum Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 3291-3294. DOI: 10.1116/1.576138 |
0.337 |
|
| 1989 |
Colas E, Aspnes D, Bhat R, Studna A, Koza M, Keramidas V. Reflectance-difference studies of organometallic chemical-vapor-deposition growth transients on (001) GaAs Journal of Crystal Growth. 94: 613-618. DOI: 10.1016/0022-0248(89)90083-3 |
0.38 |
|
| 1988 |
Bozovic I, Char K, Yoo SJ, Kapitulnik A, Beasley MR, Geballe TH, Wang ZZ, Hagen S, Ong NP, Aspnes DE, Kelly MK. Optical anisotropy of YBa2Cu3O7-x. Physical Review. B, Condensed Matter. 38: 5077-5080. PMID 9946923 DOI: 10.1103/Physrevb.38.5077 |
0.336 |
|
| 1988 |
Etemad S, Aspnes DE, Kelly MK, Thompson R, Tarascon J, Hull GW. Correlation of dopant-induced optical transitions with superconductivity in La2-xSrxCuO4- delta. Physical Review. B, Condensed Matter. 37: 3396-3399. PMID 9944931 DOI: 10.1103/Physrevb.37.3396 |
0.319 |
|
| 1988 |
Colas E, Aspnes D, Bhat R, Studna A, Koza M, Keramidas V. Reflectance-Difference Spectroscopy: a New Real-Time, In-Situ Analysis of MBE and OMCVD Growth Surfaces. Mrs Proceedings. 144. DOI: 10.1557/Proc-144-103 |
0.366 |
|
| 1988 |
Aspnes DE. Optical studies of molecular-beam epitaxy growth of GaAs and AlAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6: 1127. DOI: 10.1116/1.584264 |
0.381 |
|
| 1988 |
Aspnes DE, Harbison JP, Studna AA, Florez LT. Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 6: 1327-1332. DOI: 10.1116/1.575694 |
0.358 |
|
| 1988 |
Harbison JP, Aspnes DE, Studna AA, Florez LT, Kelly MK. Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy Applied Physics Letters. 52: 2046-2048. DOI: 10.1063/1.99576 |
0.36 |
|
| 1988 |
Aspnes DE, Harbison JP, Studna AA, Florez LT. Reflectance‐difference spectroscopy system for real‐time measurements of crystal growth Applied Physics Letters. 52: 957-959. DOI: 10.1063/1.99240 |
0.34 |
|
| 1988 |
Kelly MK, Chan S, Jenkin K, Aspnes DE, Barboux P, Tarascon J. Optical characterization of surface and interface oxygen content in YBa2Cu3Ox Applied Physics Letters. 53: 2333-2335. DOI: 10.1063/1.100516 |
0.318 |
|
| 1987 |
Etemad S, Aspnes DE, Barboux P, Hull GW, Kelly MK, Tarascon JM, Thompson R, Herr SL, Kamaras K, Porter CD, Tanner DB. Optical Properties of Dopant Induced States in La2−xSrxCuO4-δ Compounds Mrs Proceedings. 99. DOI: 10.1557/Proc-99-135 |
0.355 |
|
| 1987 |
Aspnes DE, Harbison JP, Studna AA, Florez LT. Optical Reflectance and Rheed Transients During Mbe Growth on (001) GaAs Mrs Proceedings. 91: 57. DOI: 10.1557/Proc-91-57 |
0.381 |
|
| 1987 |
Degani Y, Sheng T, Heller A, Aspnes D, Studna A, Porter J. “Transparent” metals: preparation and characterization of light-transmitting palladium, rhodium, and rhenium films Journal of Electroanalytical Chemistry and Interfacial Electrochemistry. 228: 167-178. DOI: 10.1016/0022-0728(87)80105-5 |
0.3 |
|
| 1986 |
Aspnes DE, Craighead HG. Multiple determination of the optical constants of thin-film coating materials: a Rh sequel. Applied Optics. 25: 1299. PMID 18231335 DOI: 10.1364/Ao.25.001299 |
0.371 |
|
| 1986 |
Aspnes DE, Heller A, Porter JD. Microstructurally engineered, optically transmissive, electrically conductive metal films Journal of Applied Physics. 60: 3028-3034. DOI: 10.1063/1.337757 |
0.327 |
|
| 1986 |
Snyder PG, Rost MC, Bu‐Abbud GH, Oh J, Woollam JA, Poker D, Aspnes DE, Ingram D, Pronko P. Study of Mo‐, Au‐, and Ni‐implanted molybdenum laser mirrors by multiple angle of incidence spectroscopic ellipsometry Journal of Applied Physics. 60: 779-788. DOI: 10.1063/1.337429 |
0.311 |
|
| 1986 |
Arwin H, Aspnes D. Determination of optical properties of thin organic films by spectroellipsometry Thin Solid Films. 138: 195-207. DOI: 10.1016/0040-6090(86)90393-7 |
0.326 |
|
| 1985 |
Aspnes DE, Studna AA. Anisotropies in the above-bandgap optical spectra of cubic semiconductors. Physical Review Letters. 54: 1956-1959. PMID 10031185 DOI: 10.1103/Physrevlett.54.1956 |
0.388 |
|
| 1985 |
Porter JD, Heller A, Aspnes DE. Experiment and theory of ‘transparent’ metal films Nature. 313: 664-666. DOI: 10.1038/313664A0 |
0.323 |
|
| 1984 |
Aspnes DE, Studna AA, Kinsbron E. Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV Physical Review B. 29: 768-779. DOI: 10.1103/Physrevb.29.768 |
0.422 |
|
| 1984 |
Arwin H, Aspnes D. Unambiguous determination of thickness and dielectric function of thin films by spectroscopic ellipsometry Thin Solid Films. 113: 101-113. DOI: 10.1016/0040-6090(84)90019-1 |
0.337 |
|
| 1983 |
Aspnes DE, Chang RPH. Real-Time Diagnosis of Etching and Deposition Processes by Spectroscopic Ellipsometry Mrs Proceedings. 29. DOI: 10.1557/Proc-29-217 |
0.304 |
|
| 1983 |
Aspnes DE, Studna AA. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV Physical Review B. 27: 985-1009. DOI: 10.1103/Physrevb.27.985 |
0.399 |
|
| 1983 |
Arwin H, Aspnes D, Bjorklund R, Lundström I. Dielectric function of thin polypyrrole and Prussian blue films by spectroscopic ellipsometry Synthetic Metals. 6: 309-316. DOI: 10.1016/0379-6779(83)90185-6 |
0.455 |
|
| 1983 |
Aspnes D. Recombination at semiconductor surfaces and interfaces Surface Science. 132: 406-421. DOI: 10.1016/0039-6028(83)90550-2 |
0.365 |
|
| 1983 |
Aspnes DE. The analysis of optical spectra by fourier methods Surface Science. 135: 284-306. DOI: 10.1016/0039-6028(83)90224-8 |
0.318 |
|
| 1982 |
Aspnes D. Optical properties of thin films Thin Solid Films. 89: 249-262. DOI: 10.1016/0040-6090(82)90590-9 |
0.36 |
|
| 1981 |
Bagley BG, Aspnes DE, Celler GK, Adams AC. Optical Characterization of Chemically Vapor Deposited and Laser-Annealed Polysilicon Mrs Proceedings. 4. DOI: 10.1557/Proc-4-483 |
0.358 |
|
| 1981 |
Bagley BG, Aspnes DE, Adams AC, Mogab CJ. Optical properties of low-pressure chemically vapor deposited silicon over the energy range 3.0-6.0 eV Applied Physics Letters. 38: 56-58. DOI: 10.1063/1.92131 |
0.378 |
|
| 1980 |
Celler GK, Leamy HJ, Aspnes DE, Doherty CJ, Sheng TT, Trimble LE. Laser Crystallization of Deposited Silicon Films Mrs Proceedings. 1. DOI: 10.1557/Proc-1-435 |
0.332 |
|
| 1980 |
Aspnes DE, Kinsbron E, Bacon DD. Optical properties of Au: Sample effects Physical Review B. 21: 3290-3299. DOI: 10.1103/Physrevb.21.3290 |
0.404 |
|
| 1980 |
Aspnes D. Interface ellipsometry: An overview Surface Science. 101: 84-98. DOI: 10.1016/0039-6028(80)90600-7 |
0.347 |
|
| 1980 |
Aspnes DE, Studna AA. An investigation of ion-bombarded and annealed surfaces of Ge by spectroscopic ellipsometry Surface Science. 96: 294-306. DOI: 10.1016/0039-6028(80)90308-8 |
0.347 |
|
| 1980 |
Bagley BG, Aspnes DE, Adams AC, Benenson RE. Optical properties of LPCVD aB (H) Journal of Non-Crystalline Solids. 35: 441-446. DOI: 10.1016/0022-3093(80)90634-1 |
0.319 |
|
| 1979 |
Aspnes DE, Theeten JB, Chang RPH. Nondestructive characterization of interface layers between Si or GaAs and their oxides by spectroscopic ellipsometry Journal of Vacuum Science and Technology. 16: 1374-1378. DOI: 10.1116/1.570202 |
0.356 |
|
| 1979 |
Theeten J, Aspnes D. The determination of interface layers by spectroscopic ellipsometry Thin Solid Films. 60: 183-192. DOI: 10.1016/0040-6090(79)90188-3 |
0.339 |
|
| 1979 |
Aspnes D, Cardona M, Saile V, Skibowski M, Sprüssel G. Fine structure in optical transitions from 3d and 4d core levels to the lower conduction band in Ga-V and In-V compounds Solid State Communications. 31: 99-104. DOI: 10.1016/0038-1098(79)90176-5 |
0.349 |
|
| 1978 |
Aspnes DE, Studna AA. Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimeters. The Review of Scientific Instruments. 49: 291. PMID 18699082 DOI: 10.1063/1.1135394 |
0.302 |
|
| 1978 |
Daunois A, Aspnes DE. Electroreflectance and ellipsometry of silicon from 3 to 6 eV Physical Review B. 18: 1824-1839. DOI: 10.1103/Physrevb.18.1824 |
0.343 |
|
| 1978 |
Eberhardt W, Kalkoffen G, Kunz C, Aspnes D, Cardona M. Photoemission Studies of 2p Core Levels of Pure and Heavily Doped Silicon Physica Status Solidi (B). 88: 135-143. DOI: 10.1002/Pssb.2220880115 |
0.349 |
|
| 1976 |
Aspnes DE. A photometric ellipsometer for measuring flux in a general state of polarization Surface Science. 56: 161-169. DOI: 10.1016/0039-6028(76)90443-X |
0.308 |
|
| 1975 |
Aspnes DE, Studna AA. High precision scanning ellipsometer. Applied Optics. 14: 220-8. PMID 20134857 DOI: 10.1364/Ao.14.000220 |
0.325 |
|
| 1974 |
Forman RA, Robert Thurber W, Aspnes DE. Second indirect band gap in silicon Solid State Communications. 14: 1007-1010. DOI: 10.1016/0038-1098(74)90413-X |
0.38 |
|
| 1973 |
Aspnes D, Sell D. Surface field effects in reflectance and first-derivative modulation spectra Solid State Communications. 13: 519-522. DOI: 10.1016/S0038-1098(73)80002-X |
0.328 |
|
| 1973 |
Aspnes D. Third-derivative modulation spectroscopy with low-field electroreflectance Surface Science. 37: 418-442. DOI: 10.1016/0039-6028(73)90337-3 |
0.326 |
|
| 1972 |
Aspnes DE. Linearized Third-Derivative Spectroscopy with Depletion-Barrier Modulation Physical Review Letters. 28: 913-916. DOI: 10.1103/Physrevlett.28.913 |
0.331 |
|
| 1972 |
Aspnes DE, Studna AA. Direct observation of the E0 and E0 + Δ0 transitions in silicon Solid State Communications. 11: 1375-1378. DOI: 10.1016/0038-1098(72)90546-7 |
0.322 |
|
| 1971 |
McIntyre JDE, Aspnes DE. Differential reflection spectroscopy of very thin surface films Surface Science. 24: 417-434. DOI: 10.1016/0039-6028(71)90272-X |
0.331 |
|
| 1970 |
Aspnes DE. Dependence of photoreflectance on space charge electric fields in Ge Solid State Communications. 8: 267-270. DOI: 10.1016/0038-1098(70)90643-5 |
0.329 |
|
| 1969 |
Vechten JAV, Aspnes DE. Franz-Keldysh contributions to third-order optical susceptibilities Physics Letters A. 30: 346-347. DOI: 10.1016/0375-9601(69)90841-X |
0.345 |
|
| 1968 |
Aspnes DE, Handler P, Blossey DF. Interband dielectric properties of solids in an electric field Physical Review. 166: 921-933. DOI: 10.1103/Physrev.166.921 |
0.501 |
|
| 1966 |
Handler P, Aspnes DE. Electric-field modulation of the vibrational absorption of OH- in KBr Physical Review Letters. 17: 1095-1097. DOI: 10.1103/Physrevlett.17.1095 |
0.463 |
|
| 1966 |
Frova A, Handler P, Germano FA, Aspnes DE. Electro-absorption effects at the band edges of silicon and germanium Physical Review. 145: 575-583. DOI: 10.1103/Physrev.145.575 |
0.524 |
|
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