Year |
Citation |
Score |
2019 |
Sarkar A, Shrotriya P, Chandra A. Simulation-driven Selection of Electrode Materials Based on Mechanical Performance for Lithium-Ion Battery. Materials (Basel, Switzerland). 12. PMID 30870987 DOI: 10.3390/Ma12050831 |
0.383 |
|
2019 |
Bastawros A, Chandra A, Gouda SD. A Quantitative Analysis of Multi-Scale Response of CMP Pad and Implication to Process Assessments Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0201905Jss |
0.307 |
|
2019 |
Sarkar A, Shrotriya P, Chandra A. Modeling of separator failure in lithium-ion pouch cells under compression Journal of Power Sources. 435: 226756. DOI: 10.1016/J.Jpowsour.2019.226756 |
0.313 |
|
2019 |
Sarkar A, Shrotriya P, Chandra A, Hu C. Chemo-economic analysis of battery aging and capacity fade in lithium-ion battery Journal of Energy Storage. 25: 100911. DOI: 10.1016/J.Est.2019.100911 |
0.316 |
|
2017 |
Yu T, Bastawros AF, Chandra A. Experimental and modeling characterization of wear and life expectancy of electroplated CBN grinding wheels International Journal of Machine Tools & Manufacture. 121: 70-80. DOI: 10.1016/J.Ijmachtools.2017.04.013 |
0.376 |
|
2016 |
Yu T, Asplund DT, Bastawros AF, Chandra A. Performance and modeling of paired polishing process International Journal of Machine Tools and Manufacture. 109: 49-57. DOI: 10.1016/J.Ijmachtools.2016.07.003 |
0.441 |
|
2016 |
Chandra A, Bastawros AF, Yu T, Asplund DT. Chemical mechanical paired grinding: a tool for multi-wavelength planarization International Journal of Advanced Manufacturing Technology. 1-7. DOI: 10.1007/S00170-016-9085-3 |
0.364 |
|
2015 |
Chandra A, Bastawros AF, Wu KC, Karra P. Mixed strategy combination of pressure and velocity control for chemical mechanical planarization of patternedwafers Ecs Journal of Solid State Science and Technology. 4: P5105-P5111. DOI: 10.1149/2.0161511Jss |
0.725 |
|
2015 |
Bastawros AF, Chandra A, Poosarla PA. Atmospheric pressure plasma enabled polishing of single crystal sapphire Cirp Annals - Manufacturing Technology. 64: 515-518. DOI: 10.1016/J.Cirp.2015.04.037 |
0.338 |
|
2012 |
Liu L, Kim G, Chandra A. Modeling of Ni–CGO anode in a solid oxide fuel cell deposited by spray pyrolysis Journal of Power Sources. 210: 129-137. DOI: 10.1016/J.Jpowsour.2012.03.031 |
0.354 |
|
2012 |
Liu L, Flesner R, Kim G-, Chandra A. Modeling of Solid Oxide Fuel Cells with Particle Size and Porosity Grading in Anode Electrode Fuel Cells. 12: 97-108. DOI: 10.1002/Fuce.201100095 |
0.304 |
|
2011 |
Chandra A, Ryu JJ, Karra P, Shrotriya P, Tvergaard V, Gaisser M, Weik T. Life expectancy of modular Ti6Al4V hip implants: influence of stress and environment. Journal of the Mechanical Behavior of Biomedical Materials. 4: 1990-2001. PMID 22098898 DOI: 10.1016/J.Jmbbm.2011.06.018 |
0.745 |
|
2010 |
Chandra A, Karra PK, Bastawros AF. Defectivity avoidance in chemical mechanical planarization: Role of multi-scale and multi-physics interactions Ecs Transactions. 33: 9-20. DOI: 10.1149/1.3489041 |
0.769 |
|
2010 |
Liu L, Kim G, Chandra A. Fabrication of solid oxide fuel cell anode electrode by spray pyrolysis Journal of Power Sources. 195: 7046-7053. DOI: 10.1016/J.Jpowsour.2010.04.083 |
0.329 |
|
2010 |
Liu L, Kim G, Chandra A. Modeling of thermal stresses and lifetime prediction of planar solid oxide fuel cell under thermal cycling conditions Journal of Power Sources. 195: 2310-2318. DOI: 10.1016/J.Jpowsour.2009.10.064 |
0.343 |
|
2009 |
Chandra A, Bastawros AF, Karra PK. Understanding Multi Scale Pad Effects in Chemical Mechanical Planarization Mrs Proceedings. 1157. DOI: 10.1557/Proc-1157-E02-01 |
0.744 |
|
2009 |
Chandra A, Ryu JJ, Karra P, Shrotriya P, Weik T. Electrochemical dissolution of biomedical grade Ti6Al4V: Influence of stress and environment Cirp Annals - Manufacturing Technology. 58: 499-502. DOI: 10.1016/J.Cirp.2009.03.114 |
0.743 |
|
2008 |
Shrotriya P, Karuppiah KKS, Zhang R, Chandra A, Sundararajan S. Surface stress generation during formation of alkanethiol self-assembled monolayer (SAM) Mechanics Research Communications. 35: 43-49. DOI: 10.1557/Proc-0951-E12-05 |
0.324 |
|
2008 |
Biswas R, Han Y, Karra P, Sherman P, Chandra A. Diffusion-Limited Agglomeration and Defect Generation during Chemical Mechanical Planarization Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2931519 |
0.746 |
|
2008 |
Chandra A, Karra P, Bastawros AF, Biswas R, Sherman PJ, Armini S, Lucca DA. Prediction of scratch generation in chemical mechanical planarization Cirp Annals - Manufacturing Technology. 57: 559-562. DOI: 10.1016/J.Cirp.2008.03.130 |
0.773 |
|
2008 |
Bastawros A, Che W, Chandra A. Measurement of ultrathin film mechanical properties by integrated nanoscratch/indentation approach Materials Research Society Symposium Proceedings. 1049: 57-62. |
0.504 |
|
2007 |
Bastawros A, Che W, Chandra A. Measurement of Ultrathin Film Mechanical Properties by Integrated Nano-scratch/indentation Approach Mrs Proceedings. 1049. DOI: 10.1557/Proc-1049-Aa04-04 |
0.524 |
|
2007 |
Chua BH, Chandra A, Shrotriya P. Single Asperity Wear and Stress-Assisted Dissolution of Copper Mrs Proceedings. 1025. DOI: 10.1557/Proc-1025-B16-04 |
0.39 |
|
2007 |
Zhang R, Wang X, Shrotriya P, Biswas R, Bastawros A, Chandra A. Molecular approach to material detachment mechanism during chemical mechanical planarization Machining Science and Technology. 11: 515-530. DOI: 10.1080/10910340701700799 |
0.451 |
|
2006 |
Che W, Bastawros A, Chandra A. Surface evolution during the chemical mechanical planarization of copper Cirp Annals - Manufacturing Technology. 55: 605-608. DOI: 10.1016/S0007-8506(07)60493-4 |
0.61 |
|
2005 |
Wang C, Sherman P, Chandra A. Modelling and analysis of pad surface topography and slurry particle size distribution effects on material removal rate in chemical mechanical planarisation International Journal of Manufacturing Technology and Management. 7: 504-529. DOI: 10.1504/Ijmtm.2005.007700 |
0.61 |
|
2005 |
Kadavasal MS, Chandra A, Eamkajornsiri S, Bastawros AF. Yield improvement via minimisation of step height non-uniformity in chemical mechanical planarisation (CMP) with pressure and velocity as control variables International Journal of Manufacturing Technology and Management. 7: 467-489. DOI: 10.1504/Ijmtm.2005.007698 |
0.349 |
|
2005 |
Che W, Guo Y, Chandra A, Bastawros A. A scratch intersection model of material removal during Chemical Mechanical Planarization (CMP) Journal of Manufacturing Science and Engineering, Transactions of the Asme. 127: 545-554. DOI: 10.1115/1.1949616 |
0.612 |
|
2005 |
Wang C, Sherman P, Chandra A. A stochastic model for the effects of pad surface topography evolution on material removal rate decay in chemical-mechanical planarization Ieee Transactions On Semiconductor Manufacturing. 18: 695-708. DOI: 10.1109/Tsm.2005.858516 |
0.593 |
|
2005 |
Wang C, Sherman P, Chandra A, Dornfeld D. Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization Cirp Annals. 54: 309-312. DOI: 10.1016/S0007-8506(07)60110-3 |
0.595 |
|
2005 |
Fu G, Chandra A. The relationship between wafer surface pressure and wafer backside loading in Chemical Mechanical Polishing Thin Solid Films. 474: 217-221. DOI: 10.1016/J.Tsf.2004.09.010 |
0.589 |
|
2005 |
Che W, Bastawros A, Chandra A. Synergy between chemical dissolution and mechanical abrasion during chemical mechanical polishing of copper Materials Research Society Symposium Proceedings. 867: 275-280. |
0.605 |
|
2004 |
Guo Y, Chandra A, Bastawros AF. Analytical dishing and step height reduction model for CMP with a viscoelastic pad Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1774189 |
0.456 |
|
2003 |
Che W, Guo Y, Chandra A, Bastawros A. Mechanistic Understanding of Material Detachment During Micro-Scale Polishing Journal of Manufacturing Science and Engineering. 125: 731-735. DOI: 10.1115/1.1619964 |
0.625 |
|
2003 |
Fu G, Chandra A. An analytical dishing and step height reduction model for chemical mechanical planarization (CMP) Ieee Transactions On Semiconductor Manufacturing. 16: 477-485. DOI: 10.1109/Tsm.2003.815202 |
0.607 |
|
2003 |
Eamkajornsiri S, Narayanaswami R, Chandra A. Yield improvement in wafer planarization: Modeling and simulation Journal of Manufacturing Systems. 22: 239-247. DOI: 10.1016/S0278-6125(03)90023-9 |
0.455 |
|
2003 |
Gouda SD, Bastawros A, Chandra A. Multi-Scale Characterization of Pad Role on Material Removal Rate in CMP Materials Research Society Symposium - Proceedings. 767: 95-100. |
0.359 |
|
2002 |
Eamkajornsiri S, Narayanaswami R, Chandra A. Wafer scale modeling and control for yield improvement in wafer planarization Asme International Mechanical Engineering Congress and Exposition, Proceedings. 301-310. DOI: 10.1115/IMECE2002-33454 |
0.322 |
|
2002 |
Ye Y, Biswas R, Bastawros A, Chandra A. Simulation of chemical mechanical planarization of copper with molecular dynamics Applied Physics Letters. 81: 1875-1877. DOI: 10.1063/1.1505113 |
0.405 |
|
2002 |
Fu G, Chandra A. A model for wafer scale variation of material removal rate in chemical mechanical polishing based on viscoelastic pad deformation Journal of Electronic Materials. 31: 1066-1073. DOI: 10.1007/S11664-002-0044-4 |
0.648 |
|
2002 |
Bastawros A, Chandra A, Guo Y, Yan B. Pad effects on material-removal rate in chemical-mechanical planarization Journal of Electronic Materials. 31: 1022-1031. DOI: 10.1007/S11664-002-0038-2 |
0.456 |
|
2002 |
Bastawros A, Chandra A, Guo Y, Yan B. Pad effects on material-removal rate in chemical-mechanical planarization Journal of Electronic Materials. 31: 1022-1031. |
0.354 |
|
2002 |
Che W, Guo Y, Bastawros A, Chandra A. Mechanistic understanding of material detachment during CMP processing Materials Research Society Symposium Proceedings. 732: 90-95. |
0.597 |
|
2001 |
Fu G, Chandra A, Guha S, Subhash G. A plasticity-based model of material removal in chemical-mechanical polishing (CMP) Ieee Transactions On Semiconductor Manufacturing. 14: 406-417. DOI: 10.1109/66.964328 |
0.589 |
|
2001 |
Wang H, Subhash G, Chandra A. Characteristics of single-grit rotating scratch with a conical tool on pure titanium Wear. 249: 566-581. DOI: 10.1016/S0043-1648(01)00585-3 |
0.364 |
|
2001 |
Fu G, Chandra A. A model for wafer scale variation of removal rate in chemical mechanical polishing based on elastic pad deformation Journal of Electronic Materials. 30: 400-408. DOI: 10.1007/S11664-001-0051-X |
0.63 |
|
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