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Leda Lunardi - Publications

Affiliations: 
Electrical and Computer Engineering North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering
Website:
https://ece.ncsu.edu/people/llunard/
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Luo H, Wellenius P, Lunardi L, Muth JF. Transparent IGZO-based logic gates Ieee Electron Device Letters. 33: 673-675. DOI: 10.1109/Led.2012.2186784  0.306
2010 Suresh A, Wellenius P, Baliga V, Luo H, Lunardi LM, Muth JF. Fast all-transparent integrated circuits based on indium gallium zinc oxide thin-film transistors Ieee Electron Device Letters. 31: 317-319. DOI: 10.1109/Led.2010.2041525  0.312
2010 Lou Y, Lunardi LM, Muth JF. Fabrication of nanoshell arrays using directed assembly of nanospheres Ieee Sensors Journal. 10: 617-620. DOI: 10.1109/Jsen.2009.2038586  0.306
2009 Chintapatla S, Muth JF, Lunardi LM. Controlling the wrinkling of the bilayer thin films electrothermally Materials Research Society Symposium Proceedings. 1139: 97-102. DOI: 10.1557/Proc-1139-Gg03-20  0.376
2009 Wellenius P, Suresh A, Luo H, Lunardi LM, Muth JF. An amorphous indium-gallium-zinc-oxide active matrix electroluminescent pixel Ieee/Osa Journal of Display Technology. 5: 438-445. DOI: 10.1109/Jdt.2009.2024012  0.373
2006 Gollakota P, Dhawan A, Wellenius P, Lunardi LM, Muth JF, Saripalli YN, Peng HY, Everitt HO. Optical characterization of Eu-doped Β-Ga 2O 3 thin films Applied Physics Letters. 88. DOI: 10.1063/1.2208368  0.371
2005 Muth JF, Gollakota P, Dhawan A, Porter HL, Saripalli YN, Lunardi LM. Gallium Oxide as a host for rare earth elements Materials Research Society Symposium Proceedings. 866: 177-182.  0.436
1996 Hamm RA, Chandrasekhar S, Lunardi L, Geva M, Malik R, Humphrey D, Ryan R. Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications Journal of Crystal Growth. 164: 362-370. DOI: 10.1016/0022-0248(96)00004-8  0.362
1995 Hamm RA, Malik R, Humphrey D, Ryan R, Chandrasekhar S, Lunardi L, Geva M. Carbon doping of Ga0.47In0.53As using carbontetrabromide by metalorganic molecular beam epitaxy for InP‐based heterostructure bipolar transistor devices Applied Physics Letters. 67: 2226-2228. DOI: 10.1063/1.115111  0.335
1995 Hamm RA, Chandrasekhar S, Lunardi L, Geva M. Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy Journal of Crystal Growth. 148: 1-7. DOI: 10.1016/0022-0248(94)00862-0  0.305
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