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Steven F. LeBoeuf, Ph.D. - Publications

Affiliations: 
2001 North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Jindal V, Grandusky J, Jamil M, Tripathi N, Thiel B, Shahedipour-Sandvik F, Balch J, LeBoeuf S. Effect of interfacial strain on the formation of AlGaN nanostructures by selective area heteroepitaxy Physica E: Low-Dimensional Systems and Nanostructures. 40: 478-483. DOI: 10.1016/J.Physe.2007.07.026  0.473
2007 Jindal V, Grandusky JR, Tripathi N, Shahedipour-Sandvik F, LeBoeuf S, Balch J, Tolliver T. Selective area heteroepitaxy of nano-AlGaN ultraviolet excitation sources for biofluorescence application Journal of Materials Research. 22: 838-844. DOI: 10.1557/Jmr.2007.0141  0.357
2007 Cao XA, LeBoeuf SF. Current and temperature dependent characteristics of deep-ultraviolet light-emitting diodes Ieee Transactions On Electron Devices. 54: 3414-3417. DOI: 10.1109/TED.2007.908532  0.302
2006 Cao XA, Piao H, LeBoeuf SF, Lin JY, Jiang HX. Investigation of the electrical and chemical properties of plasma-treated AlGaN Materials Research Society Symposium Proceedings. 955: 1-6. DOI: 10.1557/Proc-0955-I16-04  0.304
2006 Jindal V, Grandusky J, Shahedipour-Sandvik F, LeBoeuf S, Balch J, Tolliver T. Selective area heteroepitaxy of nano-AlGaN UV excitation sources for biofluorescence application Materials Research Society Symposium Proceedings. 916: 97-102. DOI: 10.1557/Proc-0916-Dd05-03  0.358
2006 Cao XA, Stecher TE, LeBoeuf SF. Comparison of the electroluminescence of blue and deep-UV light-emitting diodes at elevated temperatures Materials Research Society Symposium Proceedings. 892: 181-186. DOI: 10.1557/Proc-0892-Ff09-05  0.347
2006 Cao XA, LeBoeuf SF, Stecher TE. Temperature-dependent electroluminescence of AlGaN-based UV LEDs Ieee Electron Device Letters. 27: 329-331. DOI: 10.1109/Led.2006.873763  0.373
2006 Cao XA, Piao H, LeBoeuf SF, Li J, Lin JY, Jiang HX. Effects of plasma treatment on the Ohmic characteristics of Ti/AI/Ti/Au contacts to n-AIGaN Applied Physics Letters. 89. DOI: 10.1063/1.2338434  0.311
2006 Lu H, Cao XA, LeBoeuf SF, Hong HC, Kaminsky EB, Arthur SD. Cathodoluminescence mapping and selective etching of defects in bulk GaN Journal of Crystal Growth. 291: 82-85. DOI: 10.1016/J.Jcrysgro.2006.02.026  0.312
2005 Cao XA, Teetsov JM, LeBoeuf SF, Arthur SD, Kretchmer J. Efficient and reliable homoepitaxially-grown InGaN-based light-emitting diodes Materials Research Society Symposium Proceedings. 831: 581-586. DOI: 10.1557/Proc-831-E10.7  0.426
2005 Grandusky JR, Jamil M, Jindal V, Deluca JA, Leboeuf SF, Cao XA, Arthur SD, Shahedipour-Sandvik F. Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD Proceedings of Spie - the International Society For Optical Engineering. 5941: 1-9. DOI: 10.1117/12.617658  0.354
2005 Grandusky JR, Jamil M, Shahedipour-Sandvik F, DeLuca JA, LeBoeuf SF, Cao XA, Arthur SD. Optimization of the active region of InGaNGaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1576-1581. DOI: 10.1116/1.1947804  0.355
2005 Shahedipour-Sandvik F, Grandusky J, Alizadeh A, Keimel C, Ganti SP, Taylor ST, LeBoeuf SF, Sharma P. Strain dependent facet stabilization in selective-area heteroepitaxial growth of GaN nanostructures Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2131199  0.443
2005 Cao XA, Lu H, Leboeuf SF, Cowen C, Arthur SD, Wang W. Growth and characterization of GaN PiN rectifiers on free-standing GaN Applied Physics Letters. 87. DOI: 10.1063/1.2001738  0.341
2005 Garrett GA, Collins CJ, Sampath AV, Shen H, Wraback M, LeBoeuf SF, Flynn J, Brandes G. Defect density dependence of carrier dynamics in A1GaN multiple quantum wells grown on GaN substrates and templates Physica Status Solidi C: Conferences. 2: 2332-2336. DOI: 10.1002/Pssc.200461600  0.487
2004 Cao XA, LeBoeuf SF, Arthur SD, Merfeld DW, D'Evelyn MP. Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaN Proceedings of Spie - the International Society For Optical Engineering. 5530: 48-53. DOI: 10.1117/12.566040  0.354
2004 Cao XA, LeBoeuf SF, D'Evelyn MP, Arthur SD, Kretchmer J, Yan CH, Yang ZH. Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates Applied Physics Letters. 84: 4313-4315. DOI: 10.1063/1.1756683  0.437
2004 Alizadeh A, Sharma P, Ganti S, LeBoeuf SF, Tsakalakos L. Templated wide band-gap nanostructures Journal of Applied Physics. 95: 8199-8206. DOI: 10.1063/1.1737477  0.316
2004 Cao XA, Yan CH, D'Evelyn MP, LeBoeuf SF, Kretchmer JW, Klinger R, Arthur SD, Merfeld DW. Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm Journal of Crystal Growth. 269: 242-248. DOI: 10.1016/J.Jcrysgro.2004.05.065  0.444
2004 Merfeld DW, Cao XA, Leboeuf SF, Arthur SD, Kretchmer JW, D'Evelyn MP. Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes Journal of Electronic Materials. 33: 1401-1405. DOI: 10.1007/S11664-004-0170-2  0.431
2003 Xin HP, Flvnn JS, Dion JA, Hutchins EL, Antunes H, Fieschi-Corso L, Van Egas R, Brandes GR, LeBoeuf SF, Cao XA, Garrett JL, Rowland LB. Electrical and optical characteristics of delta doped AlGaN cladding layer materials for highly efficient 340nm ultra violet LEDs Materials Research Society Symposium - Proceedings. 798: 29-34. DOI: 10.1557/Proc-798-Y3.10  0.323
2003 Cao XA, LeBoeuf SF, Rowland LB, Yan CH, Liu H. Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes Applied Physics Letters. 82: 3614-3616. DOI: 10.1063/1.1578539  0.396
2003 Ebong A, Arthur S, Downey E, Cao XA, LeBoeuf S, Merfeld DW. Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading Solid-State Electronics. 47: 1817-1823. DOI: 10.1016/S0038-1101(03)00139-4  0.3
2003 Cao XA, Sandvik PM, LeBoeuf SF, Arthur SD. Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses Microelectronics Reliability. 43: 1987-1991. DOI: 10.1016/J.Microrel.2003.06.001  0.354
2002 Cao XA, Stokes EB, LeBoeuf SF, Sandvik PM, Kretchmer J, Walker D. Influence of Defects on Current Transport in GaN/InGaN Multiple Quantum Well Light-Emitting Diodes Mrs Proceedings. 722. DOI: 10.1557/Proc-722-K2.3  0.399
2002 Roberts JC, Moody BF, Barletta P, Aumer ME, LeBoeuf SF, Luther JM, Bedair SM. Growth of high nitrogen content GaAsN by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 692: 29-34. DOI: 10.1557/Proc-692-H1.9.1  0.691
2002 Cao XA, Stokes EB, Sandvik PM, LeBoeuf SF, Kretchmer J, Walker D. Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes Ieee Electron Device Letters. 23: 535-537. DOI: 10.1109/Led.2002.802601  0.425
2002 Aumer ME, Leboeuf SF, Moody BF, Bedair SM, Nam K, Lin JY, Jiang HX. Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures Applied Physics Letters. 80: 3099-3101. DOI: 10.1063/1.1469219  0.703
2002 Moody BF, Barletta PT, El-Masry NA, Roberts JC, Aumer ME, Leboeuf SF, Bedair SM. Effect of H2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0≤y≤0.08) Applied Physics Letters. 80: 2475-2477. DOI: 10.1063/1.1464225  0.682
2002 Cao XA, LeBoeuf SF, Kim KH, Sandvik PM, Stokes EB, Ebong A, Walker D, Kretchmer J, Lin JY, Jiang HX. Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes Solid-State Electronics. 46: 2291-2294. DOI: 10.1016/S0038-1101(02)00190-9  0.382
2002 Roberts JC, Parker CA, Muth JF, Leboeuf SF, Aumer ME, Bedair SM, Reed MJ. Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from in xGa 1-xN (0 ≤ x ≤ 0.13) Journal of Electronic Materials. 31: L1-L6. DOI: 10.1007/S11664-002-0179-3  0.574
2001 Aumer ME, LeBoeuf SF, Moody BF, Bedair SM. Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells Applied Physics Letters. 79: 3803-3805. DOI: 10.1063/1.1418453  0.694
2001 El-Masry NA, Behbehani MK, LeBoeuf SF, Aumer ME, Roberts JC, Bedair SM. Self-assembled AlInGaN quaternary superlattice structures Applied Physics Letters. 79: 1616-1618. DOI: 10.1063/1.1400763  0.526
2000 Aumer ME, LeBoeuf SF, Bedair SM, Smith M, Lin JY, Jiang HX. Effects of tensile and compressive strain on the luminescence properties of AllnGaN/lnGaN quantum well structures Applied Physics Letters. 77: 821-823. DOI: 10.1063/1.1306648  0.612
2000 LeBoeuf SF, Aumer ME, Bedair SM. Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells Applied Physics Letters. 77: 97-99. DOI: 10.1063/1.126889  0.601
1999 Aumer ME, LeBoeuf SF, McIntosh FG, Bedair SM. High optical quality AlInGaN by metalorganic chemical vapor deposition Applied Physics Letters. 75: 3315-3317.  0.579
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