| Year |
Citation |
Score |
| 2019 |
Gershoni D, Vandenberg JM, Chu SN, Temkin H, Tanbun-Ek T, Logan RA. Excitonic transitions in strained-layer InxGa1-xAs/GaAs quantum wells. Physical Review. B, Condensed Matter. 40: 10017-10020. PMID 9991542 DOI: 10.1103/Physrevb.40.10017 |
0.325 |
|
| 2008 |
Aurongzeb D, Song DY, Kipshidze G, Yavich B, Nyakiti L, Lee R, Chaudhuri J, Temkin H, Holtz M. Growth of GaN nanowires on epitaxial GaN Journal of Electronic Materials. 37: 1076-1081. DOI: 10.1007/S11664-008-0483-7 |
0.387 |
|
| 2007 |
Stojanovic N, Yun J, Washington EBK, Berg JM, Holtz MW, Temkin H. Thin-film thermal conductivity measurement using microelectrothermal test structures and finite-element-model-based data analysis Journal of Microelectromechanical Systems. 16: 1269-1275. DOI: 10.1109/Jmems.2007.900877 |
0.304 |
|
| 2007 |
Chandolu A, Nikishin S, Holtz M, Temkin H. X-ray diffraction study of AlNAlGaN short period superlattices Journal of Applied Physics. 102. DOI: 10.1063/1.2821358 |
0.352 |
|
| 2006 |
Datta A, Gangopadhyay S, Temkin H, Pu Q, Liu S. Nanofluidic channels by anodic bonding of amorphous silicon to glass to study ion-accumulation and ion-depletion effect. Talanta. 68: 659-65. PMID 18970372 DOI: 10.1016/J.Talanta.2005.05.011 |
0.336 |
|
| 2006 |
Nikishin SA, Borisov BA, Kuryatkov VV, Holtz M, Temkin H. Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy Materials Research Society Symposium Proceedings. 892: 13-18. DOI: 10.1557/Proc-0892-Ff01-06 |
0.409 |
|
| 2006 |
Borisov BA, Nikishin SN, Kuryatkov VV, Kuchinskiǐ VI, Holtz M, Temkin H. Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy Semiconductors. 40: 454-458. DOI: 10.1134/S1063782606040154 |
0.397 |
|
| 2006 |
Yun J, Choi K, Mathur K, Kuryatkov V, Borisov B, Kipshidze G, Nikishin S, Temkin H. Low-resistance ohmic contacts to digital alloys of n-AlGaN/AlN Ieee Electron Device Letters. 27: 22-24. DOI: 10.1109/Led.2005.861255 |
0.323 |
|
| 2006 |
Aurongzeb D, Washington E, Basavaraj M, Berg JM, Temkin H, Holtz M. Nanoscale surface roughening in ultrathin aluminum films Journal of Applied Physics. 100. DOI: 10.1063/1.2365388 |
0.315 |
|
| 2006 |
Aurongzeb D, Ram KB, Holtz M, Basavaraj M, Kipshidze G, Yavich B, Nikishin SA, Temkin H. Formation of nickel nanodots on GaN Journal of Applied Physics. 99. DOI: 10.1063/1.2159077 |
0.353 |
|
| 2005 |
Gherasoiu I, Nikishin S, Kipshidze G, Borisov B, Chandolu A, Holtz M, Temkin H. Mechanism of metalorganic MBE growth of high quality AIN on Si (111) Materials Research Society Symposium Proceedings. 831: 227-232. DOI: 10.1557/Proc-831-E3.35 |
0.407 |
|
| 2005 |
Nikishin SA, Holtz M, Temkin H. Digital alloys of AlN/AlGaN for deep UV light emitting diodes Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7221-7226. DOI: 10.1143/Jjap.44.7221 |
0.359 |
|
| 2005 |
Faleev N, Temkin H, Ahmad I, Holtz M, Melnik Y. Depth dependence of defect density and stress in GaN grown on SiC Journal of Applied Physics. 98. DOI: 10.1063/1.2141651 |
0.397 |
|
| 2005 |
Borisov B, Nikishin S, Kuryatkov V, Temkin H. Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2128485 |
0.355 |
|
| 2005 |
Borisov B, Kuryatkov V, Kudryavtsev Y, Asomoza R, Nikishin S, Song DY, Holtz M, Temkin H. Si-doped Al xGa 1-xN (0.56≤×≤1) layers grown by molecular beam epitaxy with ammonia Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2061856 |
0.416 |
|
| 2005 |
Gherasoiu I, Nikishin S, Temkin H. Metal-organic molecular-beam epitaxy of GaN with trimethylgallium and ammonia: Experiment and modeling Journal of Applied Physics. 98. DOI: 10.1063/1.2039276 |
0.364 |
|
| 2005 |
Kuryatkov V, Borisov B, Saxena J, Nikishin SA, Temkin H, Patibandla S, Menon L, Holtz M. Analysis of nonselective plasma etching of AlGaN by C F4 Ar Cl2 Journal of Applied Physics. 97. DOI: 10.1063/1.1866490 |
0.311 |
|
| 2005 |
Kipshidze G, Yavich B, Chandolu A, Yun J, Kuryatkov V, Ahmad I, Aurongzeb D, Holtz M, Temkin H. Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1850188 |
0.393 |
|
| 2004 |
Risk WP, Kim HC, Miller RD, Temkin H, Gangopadhyay S. Optical waveguides with an aqueous core and a low-index nanoporous cladding Optics Express. 12: 6446-6455. DOI: 10.1364/Opex.12.006446 |
0.323 |
|
| 2004 |
Bernussi AA, de Peralta LG, Gorbounov V, Linn JA, Frisbie S, Gale R, Temkin H. Mirror quality and the performance of reflective arrayed-waveguide grating multiplexers Journal of Lightwave Technology. 22: 1828-1832. DOI: 10.1109/Jlt.2004.831196 |
0.313 |
|
| 2004 |
Shalish I, Temkin H, Narayanamurti V. Size-dependent surface luminescence in ZnO nanowires Physical Review B - Condensed Matter and Materials Physics. 69: 245401-1-245401-4. DOI: 10.1103/Physrevb.69.245401 |
0.304 |
|
| 2004 |
Nikishin SA, Borisov BA, Chandolu A, Kuryatkov VV, Temkin H, Holtz M, Mokhov EN, Makarov Y, Helava H. Short-period superlattices of AIN/Al 0.08Ga 0.92N grown on AIN substrates Applied Physics Letters. 85: 4355-4357. DOI: 10.1063/1.1815056 |
0.34 |
|
| 2004 |
Gherasoiu I, Nikishin S, Kipshidze G, Borisov B, Chandolu A, Ramkumar C, Holtz M, Temkin H. Growth mechanism of AIN by metal-organic molecular beam epitaxy Journal of Applied Physics. 96: 6272-6276. DOI: 10.1063/1.1813623 |
0.41 |
|
| 2004 |
Choi K, Temkin H, Harris H, Gangopadhyay S, Xie L, White M. Initial growth of interfacial oxide during deposition of HfO 2 on silicon Applied Physics Letters. 85: 215-217. DOI: 10.1063/1.1771457 |
0.58 |
|
| 2004 |
Zhu K, Kuryatkov V, Borisov B, Yun J, Kipshidze Q, Nikishin SA, Temkin H, Aurongzeb D, Holtz M. Evolution of surface roughness of AlN and GaN induced by inductively coupled Cl 2/Ar plasma etching Journal of Applied Physics. 95: 4635-4641. DOI: 10.1063/1.1688993 |
0.317 |
|
| 2004 |
Ahmad I, Holtz M, Faleev NN, Temkin H. Dependence of the stress-temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H-SiC substrates Journal of Applied Physics. 95: 1692-1697. DOI: 10.1063/1.1637707 |
0.347 |
|
| 2003 |
Holtz M, Ahmad I, Kuryatkov VV, Borisov BA, Kipshidze GD, Chandolu A, Nikishin SA, Temkin H. Optical properties of AlN/AlGa(In)N short period superlattices - Deep UV light emitting diodes Materials Research Society Symposium - Proceedings. 798: 23-28. DOI: 10.1557/Proc-798-Y1.9 |
0.408 |
|
| 2003 |
Choi K, Harris H, Gangopadhyay S, Temkin H. Limiting native oxide regrowth for high-k gate dielectrics Materials Research Society Symposium - Proceedings. 765: 85-90. DOI: 10.1557/Proc-765-D3.6 |
0.539 |
|
| 2003 |
Faleev N, Temkin H, Ahmad I, Holtz M, Melnik Y. D041 HIGH RESOLUTION X-RAY DIFFRACTION STUDIES OF EPITAXIALLY GROWN GaN/SiC(0001) - GROWTH CONDITIONS, DEFECT DENSITY AND STRESS Powder Diffraction. 18: 173-173. DOI: 10.1154/1.1706940 |
0.347 |
|
| 2003 |
Nikishin SA, Kuryatkov VV, Chandolu A, Borisov BA, Kipshidze GD, Ahmad I, Holtz M, Temkin H. Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N Japanese Journal of Applied Physics, Part 2: Letters. 42. DOI: 10.1143/Jjap.42.L1362 |
0.381 |
|
| 2003 |
Choi K, Harris H, Gangopadhyay S, Temkin H. Cleaning of Si and properties of the HfO2-Si interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 718-722. DOI: 10.1116/1.1569922 |
0.532 |
|
| 2003 |
Grave de Peralta L, Bernussi AA, Temkin H, Borhani MM, Doucette DE. Silicon-dioxide waveguides with low birefringence Ieee Journal of Quantum Electronics. 39: 874-879. DOI: 10.1109/Jqe.2003.813194 |
0.365 |
|
| 2003 |
Aurongzeb D, Holtz M, Daugherty M, Berg JM, Chandolu A, Yun J, Temkin H. Influence of nanocrystal growth kinetics on interface roughness in nickel-aluminum multilayers Applied Physics Letters. 83: 5437-5439. DOI: 10.1063/1.1637155 |
0.398 |
|
| 2003 |
Russella KJ, Appelbaum I, Temkin H, Perry CH, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature electro-optic up-conversion via internal photoemission Applied Physics Letters. 82: 2960-2962. DOI: 10.1063/1.1571981 |
0.312 |
|
| 2003 |
De Peralta LG, Temkin H. Improved Fourier method of thickness determination by x-ray reflectivity Journal of Applied Physics. 93: 1974-1977. DOI: 10.1063/1.1536722 |
0.301 |
|
| 2003 |
Kipshidze G, Kuryatkov V, Zhu K, Borisov B, Holtz M, Nikishin S, Temkin H. AlN/AlGaInN superlattice light-emitting diodes at 280 nm Journal of Applied Physics. 93: 1363-1366. DOI: 10.1063/1.1535255 |
0.376 |
|
| 2002 |
Holtz M, Kipshidze G, Chandolu A, Yun J, Borisov B, Kuryatkov V, Zhu K, Chu SNG, Nikishin SA, Temkin H. Preparation of optoelectronic devices based on AlN/AlGaN superlattices Materials Research Society Symposium - Proceedings. 744: 621-626. DOI: 10.1557/Proc-744-M10.1 |
0.4 |
|
| 2002 |
Harris H, Choi K, Mehta N, Chandolu A, Biswas N, Kipshidze G, Nikishin S, Gangopadhyay S, Temkin H. HfO2 gate dielectric with 0.5 nm equivalent oxide thickness Applied Physics Letters. 81: 1065-1067. DOI: 10.1063/1.1495882 |
0.569 |
|
| 2002 |
Kipshidze G, Kuryatkov V, Borisov B, Holtz M, Nikishin S, Temkin H. AlGaInN-based ultraviolet light-emitting diodes grown on Si(111) Applied Physics Letters. 80: 3682-3684. DOI: 10.1063/1.1480886 |
0.415 |
|
| 2002 |
Kipshidze G, Kuryatkov V, Borisov B, Kudryavtsev Y, Asomoza R, Nikishin S, Temkin H. Mg and O codoping in p-type GaN and AlxGa1-xN (0<x<0.08) Applied Physics Letters. 80: 2910-2912. DOI: 10.1063/1.1471373 |
0.325 |
|
| 2002 |
Zubrilov AS, Nikishin SA, Kipshidze GD, Kuryatkov VV, Temkin H, Prokofyeva TI, Holtz M. Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia Journal of Applied Physics. 91: 1209-1212. DOI: 10.1063/1.1430535 |
0.414 |
|
| 2002 |
Jin C, Nikishin SA, Kuchinskii VI, Temkin H, Holtz M. Metalorganic molecular beam epitaxy of (In)GaAsN with dimethylhydrazine Journal of Applied Physics. 91: 56-64. DOI: 10.1063/1.1419206 |
0.398 |
|
| 2002 |
Kipshidze G, Kuryatkov V, Borisov B, Nikishin S, Holtz M, Chu SNG, Temkin H. Deep Ultraviolet AlGaInN‐Based Light‐Emitting Diodes on Si(111) and Sapphire Physica Status Solidi (a). 192: 286-291. DOI: 10.1002/1521-396X(200208)192:2<286::Aid-Pssa286>3.0.Co;2-2 |
0.454 |
|
| 2002 |
Kipshidze G, Kuryatkov V, Borisov B, Nikishin S, Holtz M, Chu SNG, Temkin H. Deep ultraviolet AlGaInN-based light-emitting diodes on Si(111) and sapphire Physica Status Solidi (a) Applied Research. 192: 286-291. DOI: 10.1002/1521-396X(200208)192:2<286::AID-PSSA286>3.0.CO;2-2 |
0.336 |
|
| 2001 |
Nikishin SA, Francoeur S, Temkin H. In situ pyrometric interferometry for molecular beam epitaxy of AlxGa1-xN on Si (111) Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/Proc-639-G6.57 |
0.431 |
|
| 2001 |
Nikishin S, Kipshidze G, Kuryatkov V, Zubrilov A, Choi K, Gherasoiu I, Grave De Peralta L, Prokofyeva T, Holtz M, Asomoza R, Kudryavtsev Y, Temkin H. Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/Proc-639-G11.37 |
0.451 |
|
| 2001 |
Deelman PW, Bicknell-Tassius RN, Nikishin S, Temkin H. Low-noise, low-dark-current GaN diodes for UV detectors Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/Proc-639-G11.27 |
0.39 |
|
| 2001 |
Nikishin S, Kipshidze G, Kuryatkov V, Choi K, Gherasoiu I, Grave De Peralta L, Zubrilov A, Tretyakov V, Copeland K, Prokofyeva T, Holtz M, Asomoza R, Kudryavtsev Y, Temkin H. Gas source molecular beam epitaxy of high quality AlxGa1-xN (0≤x≤1) on Si(111) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1409-1412. DOI: 10.1116/1.1377590 |
0.432 |
|
| 2001 |
Prokofyeva T, Seon M, Vanbuskirk J, Holtz M, Nikishin SA, Faleev NN, Temkin H, Zollner S. Vibrational properties of AIN grown on (111)-oriented silicon Physical Review B - Condensed Matter and Materials Physics. 63: 1253131-1253137. DOI: 10.1103/Physrevb.63.125313 |
0.36 |
|
| 2001 |
Harris H, Biswas N, Temkin H, Gangopadhyay S, Strathman M. Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride Journal of Applied Physics. 90: 5825-5831. DOI: 10.1063/1.1413484 |
0.316 |
|
| 2001 |
Giudice GE, Kuksenkov DV, Temkin H. Small-signal impedance characteristics of quantum-well laser structures Applied Physics Letters. 78: 4109-4111. DOI: 10.1063/1.1382651 |
0.669 |
|
| 2001 |
Holtz M, Prokofyeva T, Seon M, Copeland K, Vanbuskirk J, Williams S, Nikishin SA, Tretyakov V, Temkin H. Composition dependence of the optical phonon energies in hexagonal AlxGa1-xN Journal of Applied Physics. 89: 7977-7982. DOI: 10.1063/1.1372661 |
0.354 |
|
| 2001 |
Kazimirov A, Faleev N, Temkin H, Bedzyk MJ, Dmitriev V, Melnik Y. High-resolution x-ray study of thin GaN film on SiC Journal of Applied Physics. 89: 6092-6097. DOI: 10.1063/1.1364644 |
0.352 |
|
| 2001 |
Deelman PW, Bicknell-Tassius RN, Nikishin S, Kuryatkov V, Temkin H. Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy Applied Physics Letters. 78: 2172-2174. DOI: 10.1063/1.1357448 |
0.407 |
|
| 2001 |
Biswas N, Harris HR, Wang X, Celebi G, Temkin H, Gangopadhyay S. Electrical properties of fluorinated amorphous carbon films Journal of Applied Physics. 89: 4417-4421. DOI: 10.1063/1.1353804 |
0.312 |
|
| 2001 |
Kuryatkov VV, Temkin H, Campbell JC, Dupuis RD. Low-noise photodetectors based on heterojunctions of AlGaN-GaN Applied Physics Letters. 78: 3340-3342. DOI: 10.1063/1.1351852 |
0.318 |
|
| 2001 |
Kipshidze G, Nikishin S, Kuryatkov V, Choi K, Gherasoiu I, Prokofyeva T, Holtz M, Temkin H, Hobart KD, Kub FJ, Fatemi M. High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy Journal of Electronic Materials. 30: 825-828. DOI: 10.1007/S11664-001-0065-4 |
0.453 |
|
| 2001 |
Kipshidze G, Kuryatkov V, Choi K, Gherasoiu I, Borisov B, Nikishin S, Holtz M, Tsvetkov D, Dmitriev V, Temkin H. AlN/AlGaN Bragg Reflectors Grown by Gas Source Molecular Beam Epitaxy Physica Status Solidi (a) Applied Research. 188: 881-884. DOI: 10.1002/1521-396X(200112)188:2<881::Aid-Pssa881>3.0.Co;2-# |
0.46 |
|
| 2001 |
Kuryatkov VV, Kipshidze GD, Nikishin SA, Deelman PW, Temkin H. AlGaN-Based Photodetectors Grown by Gas Source Molecular Beam Epitaxy with Ammonia Physica Status Solidi (a) Applied Research. 188: 317-320. DOI: 10.1002/1521-396X(200111)188:1<317::Aid-Pssa317>3.0.Co;2-P |
0.423 |
|
| 2000 |
Nikishin SA, Faleev NN, Antipov VG, Francoeur S, De Peralta LG, Seryogin GA, Holtz M, Prokofyeva TI, Chu SNG, Zubrilov AS, Elyukhin VA, Nikitina IP, Nikolaev A, Melnik Y, Dmitriev V, ... Temkin H, et al. High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia Mrs Internet Journal of Nitride Semiconductor Research. 5. DOI: 10.1557/S1092578300004658 |
0.802 |
|
| 2000 |
Lita B, Beck M, Goldman RS, Seryogin GA, Nikishin SA, Temkin H. Structural and compositional variations in ZnSnP2/GaAs superlattices Applied Physics Letters. 77: 2894-2896. DOI: 10.1063/1.1320463 |
0.402 |
|
| 2000 |
Nikishin SA, Faleev NN, Zubrilov AS, Antipov VG, Temkin H. Growth of AlGaN on Si(111) by gas source molecular beam epitaxy Applied Physics Letters. 76: 3028-3030. DOI: 10.1063/1.126568 |
0.471 |
|
| 2000 |
Pikal JM, Menoni CS, Thiagarajan P, Robinson GY, Temkin H. Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers Applied Physics Letters. 76: 2659-2661. DOI: 10.1063/1.126435 |
0.334 |
|
| 2000 |
Francoeur S, Seryogin GA, Nikishin SA, Temkin H. Quantitative determination of the order parameter in epitaxial layers of ZnSnP2 Applied Physics Letters. 76: 2017-2019. DOI: 10.1063/1.126240 |
0.355 |
|
| 2000 |
Seon M, Prokofyeva T, Holtz M, Nikishin SA, Faleev NN, Temkin H. Selective growth of high quality GaN on Si(111) substrates Applied Physics Letters. 76: 1842-1844. DOI: 10.1063/1.126186 |
0.446 |
|
| 2000 |
Kudriavtsev Y, Villegas A, Godines A, Ecker P, Asomoza R, Nikishin S, Jin C, Faleev N, Temkin H. Short Communication SIMS study of GaAsN/GaAs multiple quantum wells Surface and Interface Analysis. 29: 399-402. DOI: 10.1002/1096-9918(200006)29:6<399::Aid-Sia880>3.0.Co;2-X |
0.38 |
|
| 2000 |
Francoeur S, Seryogin GA, Nikishin SA, Temkin H. X-ray diffraction study of ciialcopyrite ZnSnP2 epitaxial layers Materials Research Society Symposium - Proceedings. 583: 277-282. |
0.784 |
|
| 2000 |
Nikishin SA, Faleev NN, Antipov VG, Francoeur S, De Peralta LG, Seryogin GA, Holtz M, Prokofyeva TI, Chu SNG, Zubrilov AS, Elyukhin VA, Nikitina IP, Nikolaev A, Melnik Y, Dmitriev V, ... Temkin H, et al. High Quality AIN and GaN Grown on Si(111) by gas source molecular beam epitaxy with ammonia Materials Research Society Symposium - Proceedings. 595. |
0.795 |
|
| 2000 |
Lita B, Beck M, Goldman RS, Seryogin GA, Nikishin SA, Temkin H. Structural and compositional variations in ZnSnP2/GaAs superlattices Applied Physics Letters. 77: 2894-2896. |
0.776 |
|
| 2000 |
Francoeur S, Seryogin GA, Nikishin SA, Temkin H. Quantitative determination of the order parameter in epitaxial layers of ZnSnP2 Applied Physics Letters. 76: 2017-2019. |
0.761 |
|
| 1999 |
Francoeur S, Seryogin GA, Nikishin SA, Temkin H. X-ray Diffraction Study of Chalcopyrite ZnSnP 2 Epitaxial Layers Mrs Proceedings. 583: 277. DOI: 10.1557/Proc-583-277 |
0.331 |
|
| 1999 |
Zollner S, Konkar A, Gregory RB, Wilson SR, Nikishin SA, Temkin H. Dielectric function of AlN grown on Si (111) by MBE Materials Research Society Symposium - Proceedings. 572: 231-236. DOI: 10.1557/Proc-572-231 |
0.418 |
|
| 1999 |
Giudice GE, De Peralta LG, Temkin H, Kuksenkov DV. Single-mode operation from an external cavity controlled vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 11: 1545-1547. DOI: 10.1109/68.806841 |
0.674 |
|
| 1999 |
Nikishin SA, Faleev NN, Antipov VG, Francoeur S, Grave De Peralta L, Seryogin GA, Temkin H, Prokofyeva TI, Holtz M, Chu SNG. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia Applied Physics Letters. 75: 2073-2075. DOI: 10.1063/1.124920 |
0.799 |
|
| 1999 |
Holtz M, Seon M, Prokofyeva T, Temkin H, Singh R, Dabkowski FP, Moustakas TD. Micro-Raman imaging of GaN hexagonal island structures Applied Physics Letters. 75: 1757-1759. DOI: 10.1063/1.124810 |
0.312 |
|
| 1999 |
Francoeur S, Nikishin SA, Jin C, Qiu Y, Temkin H. Excitons bound to nitrogen clusters in GaAsN Applied Physics Letters. 75: 1538-1540. DOI: 10.1063/1.124748 |
0.322 |
|
| 1999 |
Seryogin GA, Nikishin SA, Temkin H, Mintairov AM, Merz JL, Holtz M. Order–disorder transition in epitaxial ZnSnP2 Applied Physics Letters. 74: 2128-2130. DOI: 10.1063/1.123778 |
0.403 |
|
| 1999 |
Giudice GE, Kuksenkov DV, Temkin H, Lear KL. Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements Applied Physics Letters. 74: 899-901. DOI: 10.1063/1.123403 |
0.697 |
|
| 1999 |
Francoeur S, Seryogin GA, Nikishin SA, Temkin H. X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grown on GaAs Applied Physics Letters. 74: 3678-3680. DOI: 10.1063/1.123219 |
0.381 |
|
| 1999 |
Mintairov AM, Sadchikov NA, Sauncy T, Holtz M, Seryogin GA, Nikishin SA, Temkin H. Vibrational Raman and infrared studies of ordering in epitaxial ZnSnP2 Physical Review B - Condensed Matter and Materials Physics. 59: 15197-15207. |
0.764 |
|
| 1999 |
Nikishin SA, Antipov VG, Francoeur S, Faleev NN, Seryogin GA, Elyukhin VA, Temkin H, Prokofyeva TI, Holtz M, Konkar A, Zollner S. High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia Applied Physics Letters. 75: 484-486. |
0.777 |
|
| 1999 |
Francoeur S, Seryogin GA, Nikishin SA, Temkin H. X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grown on GaAs Applied Physics Letters. 74: 3678-3680. |
0.765 |
|
| 1999 |
Seryogin GA, Nikishin SA, Temkin H, Mintairov AM, Merz JL, Holtz M. Order-disorder transition in epitaxial ZnSnP2 Applied Physics Letters. 74: 2128-2130. |
0.768 |
|
| 1998 |
Nikishin SA, Antipov VG, Guriev AI, Elyukhin VA, Faleev NN, Kudriavtsev YA, Lebedev AB, Shubina TV, Zubrilov AS, Temkin H. Luminescence of GaN/GaAs(111)B grown by molecular beam epitaxy with hydrazine Journal of Vacuum Science & Technology B. 16: 1289-1292. DOI: 10.1116/1.590002 |
0.439 |
|
| 1998 |
Giudice GE, Kuksenkov DV, Temkin H. Measurement of differential carrier lifetime in vertical-cavity surface-emitting lasers Ieee Photonics Technology Letters. 10: 920-922. DOI: 10.1109/68.681270 |
0.694 |
|
| 1998 |
Prokofyeva T, Sauncy T, Seon M, Holtz M, Qiu Y, Nikishin S, Temkin H. Raman studies of nitrogen incorporation in GaAs1−xNx Applied Physics Letters. 73: 1409-1411. DOI: 10.1063/1.121959 |
0.336 |
|
| 1998 |
Nikishin SA, Temkin H, Antipov VG, Guriev AI, Zubrilov AS, Elyukhin VA, Faleev NN, Kyutt RN, Chin AK. Gas Source Molecular Beam Epitaxy Of Gan With Hydrazine On Spinel Substrates Applied Physics Letters. 72: 2361-2363. DOI: 10.1063/1.121357 |
0.447 |
|
| 1998 |
Qiu Y, Jin C, Francoeur S, Nikishin SA, Temkin H. Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine Applied Physics Letters. 72: 1999-2001. DOI: 10.1063/1.121245 |
0.438 |
|
| 1998 |
Francoeur S, Sivaraman G, Qiu Y, Nikishin S, Temkin H. Luminescence of as-grown and thermally annealed GaAsN/GaAs Applied Physics Letters. 72: 1857-1859. DOI: 10.1063/1.121206 |
0.365 |
|
| 1998 |
Osinsky A, Gangopadhyay S, Yang JW, Gaska R, Kuksenkov D, Temkin H, Shmagin IK, Chang YC, Muth JF, Kolbas RM. Visible-blind GaN Schottky barrier detectors grown on Si(111) Applied Physics Letters. 72: 551-553. DOI: 10.1063/1.120755 |
0.422 |
|
| 1998 |
Giudice GE, Kuksenkov DV, Temkin H, Lear KL. Carrier lifetimes in vertical cavity surface emitting lasers determined from electrical impedance measurements Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 213-214. |
0.663 |
|
| 1997 |
Mintairov AM, Blagnov PA, Melehin VG, Faleev NN, Merz JL, Qiu Y, Nikishin SA, Temkin H. Ordering effects in Raman spectra of coherently strained GaAs 1 − x N x Physical Review B. 56: 15836-15841. DOI: 10.1103/Physrevb.56.15836 |
0.38 |
|
| 1997 |
Mintairov AM, Temkin H. Lattice vibrations and phonon-plasmon coupling in Raman spectra of p-type In 0.53 Ga 0.47 As Physical Review B. 55: 5117-5123. DOI: 10.1103/Physrevb.55.5117 |
0.314 |
|
| 1997 |
Osinsky A, Qiu Y, Mahan J, Temkin H, Gurevich SA, Nesterov SI, Tanklevskaia EM, Tretyakov V, Lavrova OA, Skopina VI. Novel wet chemical etch for nanostructures based on II-VI compounds Applied Physics Letters. 71: 509-511. DOI: 10.1063/1.119593 |
0.358 |
|
| 1997 |
Kuksenkov DV, Temkin H, Lear KL, Hou HQ. Spontaneous emission factor in oxide confined vertical-cavity lasers Applied Physics Letters. 70: 13-15. DOI: 10.1063/1.119288 |
0.336 |
|
| 1997 |
Qiu Y, Nikishin SA, Temkin H, Faleev NN, Kudriavtsev YA. Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy Applied Physics Letters. 70: 3242-3244. DOI: 10.1063/1.119137 |
0.417 |
|
| 1997 |
Qiu Y, Nikishin SA, Temkin H, Elyukhin VA, Kudriavtsev YA. Thermodynamic considerations in epitaxial growth of GaAs1−xNx solid solutions Applied Physics Letters. 70: 2831-2833. DOI: 10.1063/1.119016 |
0.303 |
|
| 1997 |
Chernyak L, Osinsky A, Temkin H, Mintairov A, Malkina IG, Zvonkov BN, Saf’anov YN. Transport anisotropy in spontaneously ordered GaInP2 alloys Applied Physics Letters. 70: 2425-2427. DOI: 10.1063/1.118864 |
0.32 |
|
| 1997 |
Sun CJ, Yang JW, Lim BW, Chen Q, Anwar MZ, Khan MA, Osinsky A, Temkin H, Schetzina JF. Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates Applied Physics Letters. 70: 1444-1446. DOI: 10.1063/1.118557 |
0.369 |
|
| 1997 |
Khan MA, Chen Q, Yang J, Sun CJ, Lim B, Temkin H, Schetzina J, Shur MS. UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates Materials Science and Engineering B-Advanced Functional Solid-State Materials. 43: 265-268. DOI: 10.1016/S0921-5107(96)01903-4 |
0.302 |
|
| 1996 |
Qiu Y, Osinsky A, El‐Emawy AA, Littlefield E, Temkin H, Faleev N. Growth modes of ZnSe on GaAs Journal of Applied Physics. 79: 1164-1166. DOI: 10.1063/1.362709 |
0.366 |
|
| 1996 |
Yang JW, Chen Q, Sun CJ, Lim B, Anwar MZ, Khan MA, Temkin H. InGaN-GaN based light-emitting diodes over (111) spinel substrates Applied Physics Letters. 69: 369-370. DOI: 10.1063/1.118063 |
0.397 |
|
| 1996 |
Nikishin SA, Antipov VG, Ruvimov SS, Seryogin GA, Temkin H. Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine Applied Physics Letters. 69: 3227-3229. DOI: 10.1063/1.118018 |
0.422 |
|
| 1996 |
Sun CJ, Yang JW, Chen Q, Lim BW, Anwar MZ, Khan MA, Temkin H, Weismann D, Brenner I. Photoluminescence study of high quality InGaN–GaN single heterojunctions Applied Physics Letters. 69: 668-670. DOI: 10.1063/1.117800 |
0.34 |
|
| 1996 |
Chernyak L, Osinsky A, Temkin H, Yang JW, Chen Q, Khan MA. Electron beam induced current measurements of minority carrier diffusion length in gallium nitride Applied Physics Letters. 69: 2531-2533. DOI: 10.1063/1.117729 |
0.345 |
|
| 1996 |
Khan MA, Sun CJ, Yang JW, Chen Q, Lim BW, Anwar MZ, Osinsky A, Temkin H. Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates Applied Physics Letters. 69: 2418-2420. DOI: 10.1063/1.117656 |
0.371 |
|
| 1996 |
Osinsky A, Chernyak L, Temkin H, Wen Y, Parkinson BA. Effect of sulfur doping on optical anisotropy of CdSiAs2 Applied Physics Letters. 69: 2867-2869. DOI: 10.1063/1.117345 |
0.314 |
|
| 1996 |
Yang JW, Sun CJ, Chen Q, Anwar MZ, Khan MA, Nikishin SA, Seryogin GA, Osinsky AV, Chernyak L, Temkin H, Hu C, Mahajan S. High quality GaN–InGaN heterostructures grown on (111) silicon substrates Applied Physics Letters. 69: 3566-3568. DOI: 10.1063/1.117247 |
0.418 |
|
| 1996 |
Ochiai M, Giudice GE, Temkin H, Scott JW, Cockerill TM. Kinetics of thermal oxidation of AlAs in water vapor Applied Physics Letters. 68: 1898-1900. DOI: 10.1063/1.116287 |
0.64 |
|
| 1995 |
Bermussi AA, Temkin H, Coblentz DL, Logan RA. Gain nonlinearity and its temperature dependence in bulk- and quantum-well quaternary lasers Ieee Photonics Technology Letters. 7: 348-350. DOI: 10.1109/68.376798 |
0.333 |
|
| 1995 |
Thiagarajan P, Bernussi AA, Temkin H, Robinson GY, Sergent AM, Logan RA. Growth of 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy Applied Physics Letters. 67: 3676. DOI: 10.1063/1.114924 |
0.44 |
|
| 1995 |
Bernussi AA, Temkin H, Coblentz DL, Logan RA. Effect of barrier recombination on the high temperature performance of quaternary multiquantum well lasers Applied Physics Letters. 66: 67-69. DOI: 10.1063/1.114185 |
0.362 |
|
| 1995 |
Cotta MA, Hamm RA, Chu SNG, Harriott LR, Temkin H. On the origin of oval defects in metalorganic molecular beam epitaxy of InP Applied Physics Letters. 66: 2358-2360. DOI: 10.1063/1.113982 |
0.365 |
|
| 1995 |
McMahon CH, Bae JW, Menoni CS, Patel D, Temkin H, Brusenbach P, Leibenguth R. Detuning of the gain and reflectivity spectra and its effect on the output characteristics of vertical cavity surface emitting lasers Applied Physics Letters. 66: 2171-2173. DOI: 10.1063/1.113936 |
0.338 |
|
| 1995 |
Bernussi AA, Pikal J, Temkin H, Coblentz DL, Logan RA. Rate equation model of high‐temperature performance of InGaAsP quantum well lasers Applied Physics Letters. 66: 3606-3608. DOI: 10.1063/1.113802 |
0.338 |
|
| 1995 |
Bae JW, Shtengel G, Kuksenkov D, Temkin H, Brusenbach P. Threshold carrier density in vertical cavity surface emitting lasers Applied Physics Letters. 66: 2031-2033. DOI: 10.1063/1.113682 |
0.339 |
|
| 1995 |
Kuksenkov D, Feld S, Wilmsen C, Temkin H, Swirhun S, Leibenguth R. Linewidth and α‐factor in AlGaAs/GaAs vertical cavity surface emitting lasers Applied Physics Letters. 66: 277-279. DOI: 10.1063/1.113516 |
0.369 |
|
| 1995 |
Kuksenkov DV, Temkin H, Swirhun S. Frequency modulation characteristics of gain-guided AlGaAs/GaAs vertical-cavity surface-emitting lasers Applied Physics Letters. 66: 3239-3241. DOI: 10.1063/1.113390 |
0.332 |
|
| 1995 |
Kuksenkov DV, Temkin H, Swirhun S. Measurement of internal quantum efficiency and losses in vertical cavity surface emitting lasers Applied Physics Letters. 66: 1720-1722. DOI: 10.1063/1.113345 |
0.367 |
|
| 1994 |
Hamm RA, Ritter D, Temkin H. Compact metalorganic molecular‐beam epitaxy growth system Journal of Vacuum Science and Technology. 12: 2790-2794. DOI: 10.1116/1.578975 |
0.315 |
|
| 1994 |
Cotta MA, Hamm RA, Chu SNG, Harriott LR, Temkin H. Lateral thickness modulation of InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy Journal of Applied Physics. 75: 630-632. DOI: 10.1063/1.355800 |
0.38 |
|
| 1994 |
Brasil MJSP, Bernussi AA, Cotta MA, Marquezini MV, Brum JA, Hamm RA, Chu SNG, Harriott LR, Temkin H. InGaAs/InP quantum wells with thickness modulation Applied Physics Letters. 65: 857-859. DOI: 10.1063/1.112182 |
0.375 |
|
| 1993 |
Temkin H, Coblentz D, Logan RA, Vandenberg JM, Yadvish RD, Sergent AM. Strained quaternary quantum well lasers for high temperature operation Applied Physics Letters. 63: 2321-2323. DOI: 10.1063/1.110513 |
0.363 |
|
| 1993 |
Temkin H, Coblentz D, Logan RA, Ziel JPvd, Tanbun‐Ek T, Yadvish RD, Sergent AM. High temperature characteristics of InGaAsP/InP laser structures Applied Physics Letters. 62: 2402-2404. DOI: 10.1063/1.109378 |
0.382 |
|
| 1993 |
Patel D, Menoni CS, Temkin H, Logan RA, Coblentz D. Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5 GPa Applied Physics Letters. 62: 2459-2461. DOI: 10.1063/1.109318 |
0.349 |
|
| 1993 |
Cotta MA, Hamm RA, Staley TW, Yadvish RD, Harriott LR, Temkin H. Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy Applied Physics Letters. 62: 496-498. DOI: 10.1063/1.108890 |
0.352 |
|
| 1993 |
Chu C, Wang Y, Hsieh Y, Harriott L, Wade H, Temkin H, Hamm R. Nanofabrication on InP using focused ion beam lithography and Cl2 etching: process and control Materials Chemistry and Physics. 33: 158-164. DOI: 10.1016/0254-0584(93)90108-X |
0.369 |
|
| 1992 |
Lipsanen H, Coblentz DL, Logan RA, Yadvish RD, Morton PA, Temkin H. High-speed InGaAsP/InP multiple-quantum-well laser Ieee Photonics Technology Letters. 4: 673-675. DOI: 10.1109/68.145234 |
0.356 |
|
| 1992 |
Cotta MA, Harriott LR, Wang YL, Hamm RA, Wade HH, Weiner JS, Ritter D, Temkin H. Feature size effects on selective area epitaxy of InGaAs Applied Physics Letters. 61: 1936-1938. DOI: 10.1063/1.108368 |
0.392 |
|
| 1992 |
Hamm RA, Feygenson A, Ritter D, Wang YL, Temkin H, Yadvish RD, Panish MB. Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy Applied Physics Letters. 61: 592-594. DOI: 10.1063/1.107846 |
0.401 |
|
| 1992 |
Weiss S, Wiesenfeld JM, Chemla DS, Raybon G, Sucha G, Wegener M, Eisenstein G, Burrus CA, Dentai AG, Koren U, Miller BI, Temkin H, Logan RA, Tanbun‐Ek T. Carrier capture times in 1.5 μm multiple quantum well optical amplifiers Applied Physics Letters. 60: 9-11. DOI: 10.1063/1.107426 |
0.332 |
|
| 1992 |
Morton PA, Temkin H, Coblentz DL, Logan RA, Tanbun‐Ek T. Enhanced modulation bandwidth of strained multiple quantum well lasers Applied Physics Letters. 60: 1812-1814. DOI: 10.1063/1.107172 |
0.357 |
|
| 1992 |
Sui Z, Leong PP, Herman IP, Higashi GS, Temkin H. Raman analysis of light-emitting porous silicon Applied Physics Letters. 60: 2086-2088. DOI: 10.1063/1.107097 |
0.343 |
|
| 1992 |
Forouhar S, Ksendzov A, Larsson A, Temkin H. InGaAs/InGaAsP/InP strained-layer quantum well lasers at approximately 2 mu m Electronics Letters. 28: 1431-1432. DOI: 10.1049/El:19920910 |
0.366 |
|
| 1992 |
Andrekson PA, Olsson NA, Tanbun-Ek T, Logan RA, Coblentz D, Temkin H. Novel technique for determining internal loss of individual semiconductor lasers Electronics Letters. 28: 171-172. DOI: 10.1049/El:19920106 |
0.345 |
|
| 1991 |
Sui Z, Leong PP, Herman IP, Higashi GS, Temkin H. Analysis of the Structure of Light-emitting Porous Silicon by Raman Scattering Mrs Proceedings. 256. DOI: 10.1557/Proc-256-13 |
0.359 |
|
| 1991 |
Temkin H, Tanbun-Ek T, Logan RA, Cebula DA, Sergent AM. High temperature operation of lattice matched and strained InGaAs-InP quantum well lasers Ieee Photonics Technology Letters. 3: 100-102. DOI: 10.1109/68.76853 |
0.332 |
|
| 1991 |
Hamm RA, Ritter D, Temkin H, Panish MB, Vandenberg JM, Yadvish RD. Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers Applied Physics Letters. 59: 1893-1895. DOI: 10.1063/1.106180 |
0.449 |
|
| 1991 |
Wang YL, Feygenson A, Hamm RA, Ritter D, Weiner JS, Temkin H, Panish MB. Optical and electrical properties of InP/InGaAs grown selectively on SiO2‐masked InP Applied Physics Letters. 59: 443-445. DOI: 10.1063/1.105457 |
0.406 |
|
| 1991 |
Hamm RA, Ritter D, Temkin H, Panish MB, Geva M. p‐type doping of InP and Ga0.47In0.53As using diethylzinc during metalorganic molecular beam epitaxy Applied Physics Letters. 58: 2378-2380. DOI: 10.1063/1.104876 |
0.407 |
|
| 1991 |
Fukushima T, Bowers JE, Logan RA, Tanbun‐Ek T, Temkin H. Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers Applied Physics Letters. 58: 1244-1246. DOI: 10.1063/1.104324 |
0.323 |
|
| 1991 |
Wang YL, Temkin H, Hamm RA, Yadvish RD, Ritter D, Harriott LH, Panish MB. Semiconductor lasers fabricated by selective area epitaxy Electronics Letters. 27: 1324-1326. DOI: 10.1049/El:19910833 |
0.421 |
|
| 1991 |
Feygenson A, Temkin H, Tsang WT, Yang L, Yadvish RD, Scortino PF. Selfaligned InGaAs/InP heterostructure bipolar transistors Electronics Letters. 27: 1116-1118. DOI: 10.1049/El:19910697 |
0.379 |
|
| 1991 |
Tanbun-Ek T, Logan R, Temkin H, Olsson N, Wu M, Sergent A, Wecht K. Reproducible growth of narrow linewidth multiple quantum well graded index separate confinement distributed feedback (MQW-GRIN-SCH-DFB) lasers by MOVPE Journal of Crystal Growth. 107: 751-756. DOI: 10.1016/0022-0248(91)90552-G |
0.448 |
|
| 1990 |
Tanbun-ek T, Logan RA, Temkin H, Olsson NA, Sergent AM, Wecht KW. High output power single longitudinal mode graded index separate confinement multiple quantum well InGaAs/InP distributed feedback (GRIN SCH MQW DFB) lasers Ieee Photonics Technology Letters. 2: 453-455. DOI: 10.1109/68.56621 |
0.336 |
|
| 1990 |
Tanbun-Ek T, Logan RA, Temkin H, Chu SNG, Olsson NA, Sergent AM, Wecht KW. Growth and characterization of continuously graded index separate confinement heterostructure (GRIN-SCH) InGaAs-InP long wavelength strained layer quantum-well lasers by metalorganic vapor phase epitaxy Ieee Journal of Quantum Electronics. 26: 1323-1327. DOI: 10.1109/3.59676 |
0.409 |
|
| 1990 |
Temkin H, Dutta NK, Tanbun‐Ek T, Logan RA, Sergent AM. InGaAs/InP quantum well lasers with sub-mA threshold current Applied Physics Letters. 57: 1610-1612. DOI: 10.1063/1.104085 |
0.355 |
|
| 1990 |
Wang YL, Temkin H, Harriott LR, Hamm RA, Weiner JS. Vacuum lithography forinsitufabrication of buried semiconductor microstructures Applied Physics Letters. 57: 1672-1674. DOI: 10.1063/1.104082 |
0.365 |
|
| 1990 |
Wang YL, Temkin H, Harriott LR, Logan RA, Tanbun‐Ek T. Buried‐heterostructure lasers fabricated byinsituprocessing techniques Applied Physics Letters. 57: 1864-1866. DOI: 10.1063/1.104042 |
0.385 |
|
| 1990 |
Tanbun‐Ek T, Logan RA, Olsson NA, Temkin H, Sergent AM, Wecht KW. High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers Applied Physics Letters. 57: 224-226. DOI: 10.1063/1.103722 |
0.36 |
|
| 1990 |
Mattera VD, Antreasyan A, Garbinski PA, Temkin H, Olsson NA, Filipe J. Monolithic InGaAs p‐i‐n InP metal‐insulator‐semiconductor field‐effect transistor receiver for long‐wavelength optical communications Applied Physics Letters. 57: 1343-1344. DOI: 10.1063/1.103478 |
0.305 |
|
| 1990 |
Dutta NK, Temkin H, Tanbun‐Ek T, Logan R. Linewidth enhancement factor for InGaAs/InP strained quantum well lasers Applied Physics Letters. 57: 1390-1391. DOI: 10.1063/1.103444 |
0.358 |
|
| 1990 |
Hull R, Bean JC, Bonar JM, Higashi GS, Short KT, Temkin H, White AE. Enhanced strain relaxation in Si/GexSi1-x/Si heterostructures via point-defect concentrations introduced by ion implantation Applied Physics Letters. 56: 2445-2447. DOI: 10.1063/1.102904 |
0.321 |
|
| 1990 |
Higashi GS, Bean JC, Buescher C, Yadvish R, Temkin H. Improved minority-carrier lifetime in Si/SiGe heterojunction bipolar transistors grown by molecular beam epitaxy Applied Physics Letters. 56: 2560-2562. DOI: 10.1063/1.102886 |
0.428 |
|
| 1990 |
Wang YL, Harriott LR, Hamm RA, Temkin H. Role of native oxide layers in the patterning of InP by Ga ion beam writing and ion beam assisted Cl2etching Applied Physics Letters. 56: 749-751. DOI: 10.1063/1.102701 |
0.348 |
|
| 1990 |
Lidgard A, Tanbun‐Ek T, Logan RA, Temkin H, Wecht KW, Olsson NA. External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range Applied Physics Letters. 56: 816-817. DOI: 10.1063/1.102672 |
0.35 |
|
| 1990 |
Vandenberg JM, Panish MB, Hamm RA, Temkin H. Modification of intrinsic strain at lattice‐matched GaInAs/InP interfaces Applied Physics Letters. 56: 910-912. DOI: 10.1063/1.102625 |
0.383 |
|
| 1990 |
Temkin H, Tanbun‐Ek T, Logan RA. Strained InGaAs/InP quantum well lasers Applied Physics Letters. 56: 1210-1212. DOI: 10.1063/1.102562 |
0.393 |
|
| 1990 |
Temkin H, Tanbun‐Ek T, Logan RA, Lewis JA, Dutta NK. InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics Applied Physics Letters. 56: 1222-1224. DOI: 10.1063/1.102521 |
0.399 |
|
| 1990 |
Green ML, Brasen D, Geva M, Reents W, Stevie F, Temkin H. Oxygen and carbon incorporation in low temperature epitaxial si films grown by rapid thermal chemical vapor deposition (RTCVD) Journal of Electronic Materials. 19: 1015-1019. DOI: 10.1007/Bf02651975 |
0.333 |
|
| 1989 |
Gershoni D, Temkin H, Panish MB, Hamm RA. Erratum: Excitonic transitions in strained-layer InxGa1-xAs/InP quantum wells Physical Review B. 40: 1329-1329. PMID 9991967 DOI: 10.1103/Physrevb.40.1329.3 |
0.315 |
|
| 1989 |
Harriott L, Wang Y, Chin B, Temkin H. Deep Structures Produced in III-V Materials by Combined Focused Ion Beam Irradiation and Dry Etching Mrs Proceedings. 158. DOI: 10.1557/Proc-158-217 |
0.336 |
|
| 1989 |
Temkin H, Green ML, Brasena D, Bean JC. Electrical Properties of Si/SiGe Structures Grown by Low Temperature Epitaxy Mrs Proceedings. 146. DOI: 10.1557/Proc-146-65 |
0.348 |
|
| 1989 |
Green ML, Brasen D, Temkin H, Kannan VC, Luftman HS. High Quality Si and Si l-x Ge x , Films and Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD) Mrs Proceedings. 146: 55. DOI: 10.1557/Proc-146-55 |
0.351 |
|
| 1989 |
Temkin H, Harriott LR, Weiner J, Hamm RA, Panish MB. High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates Mrs Proceedings. 145. DOI: 10.1557/Proc-145-39 |
0.355 |
|
| 1989 |
Panish MB, Temkin H. Gas-Source Molecular Beam Epitaxy Annual Review of Materials Science. 19: 209-229. DOI: 10.1146/Annurev.Ms.19.080189.001233 |
0.311 |
|
| 1989 |
Antreasyan A, Garbinski PA, Mattera VD, Temkin H, Olsson NA, Filipe J. Monolithically integrated InGaAs-P-I-N InP-MISFET PINFET grown by chloride vapor phase epitaxy Ieee Photonics Technology Letters. 1: 123-125. DOI: 10.1109/68.36009 |
0.312 |
|
| 1989 |
Chen Y-, Temkin H, Tanbun-Ek T, Logan RA, Nottenburg RN. High-transconductance insulating-gate InP/InGaAs buried p-buffer DH-MODFETs grown by MOVPE Ieee Electron Device Letters. 10: 162-164. DOI: 10.1109/55.31704 |
0.335 |
|
| 1989 |
Tanbun-Ek T, Temkin H, Logan RA. High performance single and multiple quantum well InGaAs/InP lasers Ieee Transactions On Electron Devices. 36: 2606. DOI: 10.1109/16.43708 |
0.422 |
|
| 1989 |
Antreasyan A, Garbinski PA, Mattera VD, Feuer MD, Temkin H, Filipe J. High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxy Ieee Transactions On Electron Devices. 36: 256-262. DOI: 10.1109/16.19924 |
0.392 |
|
| 1989 |
Vandenberg JM, Gershoni D, Hamm RA, Panish MB, Temkin H. Structural perfection of InGaAs/InP strained‐layer superlattices grown by gas source molecular‐beam epitaxy: A high‐resolution x‐ray diffraction study Journal of Applied Physics. 66: 3635-3638. DOI: 10.1063/1.344072 |
0.396 |
|
| 1989 |
Temkin H, Gershoni DG, Chu SNG, Vandenberg JM, Hamm RA, Panish MB. Critical layer thickness in strained Ga1−xInxAs/InP quantum wells Applied Physics Letters. 55: 1668-1670. DOI: 10.1063/1.102231 |
0.368 |
|
| 1989 |
Tanbun‐Ek T, Logan RA, Temkin H, Berthold K, Levi AFJ, Chu SNG. Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy Applied Physics Letters. 55: 2283-2285. DOI: 10.1063/1.102038 |
0.398 |
|
| 1989 |
Tanbun‐Ek T, Temkin H, Chu SNG, Logan RA. Reproducible growth of low-threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth technique Applied Physics Letters. 55: 819-821. DOI: 10.1063/1.101769 |
0.436 |
|
| 1989 |
Temkin H, Harriott LR, Hamm RA, Weiner J, Panish MB. Insitupattern formation and high quality overgrowth by gas source molecular beam epitaxy Applied Physics Letters. 54: 1463-1465. DOI: 10.1063/1.101377 |
0.365 |
|
| 1989 |
Gershoni D, Temkin H. Optical properties of III–V strained-layer quantum wells Journal of Luminescence. 44: 381-398. DOI: 10.1016/0022-2313(89)90068-9 |
0.336 |
|
| 1988 |
Gershoni D, Temkin H, Panish MB. Excitonic transitions in lattice-matched Ga 1 − x In x As InP quantum wells Physical Review B. 38: 7870-7873. PMID 9945531 DOI: 10.1103/Physrevb.38.7870 |
0.315 |
|
| 1988 |
Temkin H, Bean JC, Antreasyan A, Leibenguth R. GexSi1−x strained‐layer heterostructure bipolar transistors Applied Physics Letters. 52: 1089-1091. DOI: 10.1063/1.99220 |
0.411 |
|
| 1988 |
Temkin H, Harriott LR, Panish MB. Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography Applied Physics Letters. 52: 1478-1480. DOI: 10.1063/1.99104 |
0.38 |
|
| 1988 |
Segner BP, Koszi LA, Temkin H, Flynn EJ, Ketelsen LJP, Napholtz SG, Przybylek GJ. InP/InGaAsP lasers with broad area double heterostructure lasers as back‐face monitors Journal of Applied Physics. 64: 3718-3721. DOI: 10.1063/1.341415 |
0.355 |
|
| 1988 |
Vandenberg JM, Panish MB, Temkin H, Hamm RA. Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffraction Applied Physics Letters. 53: 1920-1922. DOI: 10.1063/1.100345 |
0.373 |
|
| 1988 |
Temkin H, Chen YK, Garbinski P, Tanbun‐Ek T, Logan RA. Insulating gate InGaAs/InP field‐effect transistors Applied Physics Letters. 53: 2534-2536. DOI: 10.1063/1.100200 |
0.371 |
|
| 1988 |
Gershoni D, Temkin H, Dolan GJ, Dunsmuir J, Chu SNG, Panish MB. Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures Applied Physics Letters. 53: 995-997. DOI: 10.1063/1.100052 |
0.314 |
|
| 1988 |
Temkin H, Logan RA, Karlicek RF, Strege KE, Blaha JP, Gabla PM, Savage A, Oatis K. High-speed distributed feedback lasers grown by hydride epitaxy Applied Physics Letters. 53: 1156-1158. DOI: 10.1063/1.100043 |
0.305 |
|
| 1988 |
Gershoni D, Temkin H, Panish MB. Strained‐layer Ga1−xInxAs/InP avalanche photodetectors Applied Physics Letters. 53: 1294-1296. DOI: 10.1063/1.100001 |
0.407 |
|
| 1988 |
Pearsall TP, Beam EA, Temkin H, Bean JC. Ge-Si/Si infra-red, zone-folded superlattice detectors Electronics Letters. 24: 685-687. DOI: 10.1049/El:19880464 |
0.352 |
|
| 1988 |
Koszi LA, Segner BP, Temkin H, Dautremont-Smith WC, Huo DTC. 1.5 mu m InP/GaInAsP linear laser array with twelve individually addressable elements Electronics Letters. 24: 217-219. DOI: 10.1049/El:19880146 |
0.327 |
|
| 1987 |
Gershoni D, Vandenberg JM, Hamm RA, Temkin H, Panish MB. Electronic energy levels inInxGa1−xAs/InP strained-layer superlattices Physical Review B. 36: 1320-1323. PMID 9942954 DOI: 10.1103/Physrevb.36.1320 |
0.315 |
|
| 1987 |
Nottenburg RN, Bischoff J-, Panish MB, Temkin H. High-speed InGaAs(P)/InP double-heterostructure bipolar transistors Ieee Electron Device Letters. 8: 282-284. DOI: 10.1109/Edl.1987.26631 |
0.323 |
|
| 1987 |
Koszi LA, Temkin H, Pryzbylek GJ, Segner BP, Napholtz SG, Bogdanowicz CM, Dutta NK. High-power operation of InP/InGaAsP double-channel planar buried-heterostructure lasers with asymmetric facet coatings Applied Physics Letters. 51: 2219-2221. DOI: 10.1063/1.98945 |
0.367 |
|
| 1987 |
Antreasyan A, Garbinski PA, Mattera VD, Temkin H, Abeles JH. High‐speed operation of InP metal‐insulator‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy Applied Physics Letters. 51: 1097-1099. DOI: 10.1063/1.98752 |
0.375 |
|
| 1987 |
Temkin H, Dolan GJ, Panish MB, Chu SNG. Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes Applied Physics Letters. 50: 413-415. DOI: 10.1063/1.98159 |
0.397 |
|
| 1987 |
Tai K, Jewell JL, Tsang WT, Temkin H, Panish M, Twu Y. 1.55-μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wells Applied Physics Letters. 50: 795-797. DOI: 10.1063/1.98047 |
0.321 |
|
| 1987 |
Temkin H, Chu SNG, Panish MB, Logan RA. Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy Applied Physics Letters. 50: 956-958. DOI: 10.1063/1.97997 |
0.415 |
|
| 1987 |
Temkin H, Gershoni D, Panish MB. InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy Applied Physics Letters. 50: 1776-1778. DOI: 10.1063/1.97743 |
0.4 |
|
| 1987 |
Lahtinen JA, Temkin H, Logan RA. Modified double‐channel planar‐buried heterostructure laser with improved high‐temperature stability Journal of Applied Physics. 62: 297-299. DOI: 10.1063/1.339823 |
0.358 |
|
| 1987 |
Vandenberg JM, Hamm RA, Panish MB, Temkin H. High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy Journal of Applied Physics. 62: 1278-1283. DOI: 10.1063/1.339681 |
0.415 |
|
| 1986 |
Nottenburg RN, Temkin H, Panish MB. VIA-2 high-gain InP/InGaAs n-p-n heterojunction bipolar transistors grown by gas-source MBE Ieee Transactions On Electron Devices. 33: 1862-1862. DOI: 10.1109/T-Ed.1986.22822 |
0.306 |
|
| 1986 |
Temkin H, Logan R, Olsson N, Henry C, Dolan G, Kazarinov R, Johnson L. InGaAsP ridge waveguide distributed feedback lasers operating near 1.55 µm Journal of Lightwave Technology. 4: 520-529. DOI: 10.1109/Jlt.1986.1074745 |
0.39 |
|
| 1986 |
Nottenburg RN, Temkin H, Panish MB, Bhat R, Bischoff JC. InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus I C characteristic Ieee Electron Device Letters. 7: 643-645. DOI: 10.1109/Edl.1986.26504 |
0.327 |
|
| 1986 |
Pearsall T, Temkin H, Bean J, Luryi S. Avalanche gain in GexSi1-x/Si infrared waveguide detectors Ieee Electron Device Letters. 7: 330-332. DOI: 10.1109/Edl.1986.26390 |
0.38 |
|
| 1986 |
Luryi S, Pearsall TP, Temkin H, Bean JC. Waveguide Infrared Photodetectors on a Silicon Chip Ieee Electron Device Letters. 7: 104-107. DOI: 10.1109/Edl.1986.26309 |
0.387 |
|
| 1986 |
Lang DV, Sergent AM, Panish MB, Temkin H. Direct observation of effective mass filtering in InGaAs/InP superlattices Applied Physics Letters. 49: 812-814. DOI: 10.1063/1.97555 |
0.308 |
|
| 1986 |
Temkin H, Antreasyan A, Olsson NA, Pearsall TP, Bean JC. Ge0.6Si0.4 rib waveguide avalanche photodetectors for 1.3 μm operation Applied Physics Letters. 49: 809-811. DOI: 10.1063/1.97554 |
0.388 |
|
| 1986 |
Temkin H, Dolan GJ, Wilt DP, Logan RA, Lahtinen JA. V‐groove distributed feedback laser for 1.3–1.55 μm operation Applied Physics Letters. 49: 1148-1150. DOI: 10.1063/1.97449 |
0.359 |
|
| 1986 |
Nottenburg RN, Temkin H, Panish MB, Hamm RA. High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy Applied Physics Letters. 49: 1112-1114. DOI: 10.1063/1.97438 |
0.401 |
|
| 1986 |
Vandenberg JM, Chu SNG, Hamm RA, Panish MB, Temkin H. High-resolution x-ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas-source molecular beam epitaxy Applied Physics Letters. 49: 1302-1304. DOI: 10.1063/1.97393 |
0.429 |
|
| 1986 |
Panish MB, Temkin H, Hamm RA, Chu SNG. Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy Applied Physics Letters. 49: 164-166. DOI: 10.1063/1.97212 |
0.389 |
|
| 1986 |
Temkin H, Bean JC, Pearsall TP, Olsson NA, Lang DV. High photoconductive gain in GexSi1-x/Si strained-layer superlattice detectors operating at λ=1.3 μm Applied Physics Letters. 49: 155-157. DOI: 10.1063/1.97209 |
0.418 |
|
| 1986 |
Antreasyan A, Garbinski PA, Mattera VD, Temkin H. High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance Applied Physics Letters. 49: 513-515. DOI: 10.1063/1.97105 |
0.418 |
|
| 1986 |
Temkin H, Pearsall TP, Bean JC, Logan RA, Luryi S. GexSi1-x strained-layer superlattice waveguide photodetectors operating near 1.3 μm Applied Physics Letters. 48: 963-965. DOI: 10.1063/1.96624 |
0.409 |
|
| 1986 |
Vandenberg JM, Hamm RA, Macrander AT, Panish MB, Temkin H. Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy Applied Physics Letters. 48: 1153-1155. DOI: 10.1063/1.96454 |
0.423 |
|
| 1986 |
Antreasyan A, Garbinski PA, Mattera VD, Olsson NA, Temkin H. Ga0.47In0.53As ultrahigh gain, high sensitivity photoconductors grown by chloride vapor‐phase epitaxy Journal of Applied Physics. 60: 1535-1537. DOI: 10.1063/1.337286 |
0.348 |
|
| 1986 |
Reynolds C, Holbrook W, Shimer J, Tharaldsen S, Agrawal G, Temkin H. Experimental verification of transition from gain- to index-guiding in a rib-waveguide AlGaAs laser Electronics Letters. 22: 1290. DOI: 10.1049/El:19860885 |
0.33 |
|
| 1986 |
Temkin H, Frahm RE, Olsson NA, Burrus CA, McCoy RJ. Very high speed operation of planar InGaAs/InP photodiode detectors Electronics Letters. 22: 1267-1269. DOI: 10.1049/El:19860868 |
0.355 |
|
| 1986 |
Antreasyan A, Garbinski PA, Mattera VD, Shah NJ, Temkin H. Monolithically integrated enhancement-mode InP MISFET inverter Electronics Letters. 22: 1014-1016. DOI: 10.1049/El:19860693 |
0.339 |
|
| 1986 |
Logan RA, Temkin H. Liquid phase epitaxial growth of InP using In1−xSnx melts Journal of Crystal Growth. 76: 17-30. DOI: 10.1016/0022-0248(86)90005-9 |
0.376 |
|
| 1985 |
Olsson N, Temkin H, Ziel Jvd, Dutta N, Logan R. Single and multimode fiber bandwidth measurements with single and multilongitudinal mode lasers operating at 0.8-, 1.3-, and 1.5-µm wavelength Journal of Lightwave Technology. 3: 695-698. DOI: 10.1109/Jlt.1985.1074207 |
0.319 |
|
| 1985 |
Olsson N, Tsang W, Temkin H, Dutta N, Logan R. Bit-error-rate saturation due to mode-partition noise induced by optical feedback in 1.5-µm single longitudinal-mode C 3 and DFB semiconductor lasers Journal of Lightwave Technology. 3: 215-218. DOI: 10.1109/Jlt.1985.1074182 |
0.301 |
|
| 1985 |
Olsson N, Temkin H, Logan R, Johnson L, Dolan G, Ziel Jvd, Campbell J. Chirp-free transmission over 82.5 km of single mode fibers at 2 Gbit/s with injection locked DFB semiconductor lasers Journal of Lightwave Technology. 3: 63-67. DOI: 10.1109/Jlt.1985.1074146 |
0.329 |
|
| 1985 |
Temkin H, Panish MB, Petroff PM, Hamm RA, Vandenberg JM, Sumski S. GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy Applied Physics Letters. 47: 394-396. DOI: 10.1063/1.96178 |
0.401 |
|
| 1985 |
Temkin H, Panish MB, Logan RA. Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy Applied Physics Letters. 47: 978-980. DOI: 10.1063/1.95950 |
0.386 |
|
| 1985 |
Temkin H, Panish MB, Logan RA, Abeles JH. Hybrid growth of InGaAsP double‐channel planar buried heterostructure lasers Applied Physics Letters. 46: 811-813. DOI: 10.1063/1.95892 |
0.421 |
|
| 1985 |
Temkin H, Dolan GJ, Logan RA, Kazarinov RF, Olsson NA, Henry CH. Ridge waveguide distributed feedback lasers with electron beam defined gratings Applied Physics Letters. 46: 105-107. DOI: 10.1063/1.95700 |
0.371 |
|
| 1985 |
Temkin H, Logan RA, Van Der Ziel JP, Reynolds CL, Tharaldsen SM. Index-guided arrays of Schottky barrier confined lasers Applied Physics Letters. 46: 465-467. DOI: 10.1063/1.95614 |
0.408 |
|
| 1985 |
Shimer JA, Holbrook WR, Reynolds CL, Thompson CW, Olsson NA, Temkin H. Self-aligned rib-waveguide large optical cavity AlGaAs laser for high-power single-mode operation Journal of Applied Physics. 57: 727-731. DOI: 10.1063/1.334719 |
0.321 |
|
| 1985 |
Dupuis RD, Temkin H, Hopkins LC. InGaAsP/InP double heterostructure lasers grown by atmospheric-pressure MOCVD Electronics Letters. 21: 60-62. DOI: 10.1049/El:19850042 |
0.366 |
|
| 1985 |
Nordland WA, Kazarinov RF, Temkin H, Yen R. Growth of InGaAsP distributed feedback lasers by a modified single-phase LPE technique Solid State Communications. 55: 505-507. DOI: 10.1016/0038-1098(85)90322-9 |
0.382 |
|
| 1984 |
Ziel Jvd, Mikulyak R, Temkin H, Logan R, Dupuis R. Optical beam characteristics of Schottky barrier confined arrays of phase-coupled multiquantum well GaAs lasers Ieee Journal of Quantum Electronics. 20: 1259-1266. DOI: 10.1109/Jqe.1984.1072310 |
0.345 |
|
| 1984 |
Temkin H, Panish MB, Logan RA, Ziel JPvd. λ≊1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxy Applied Physics Letters. 45: 330-332. DOI: 10.1063/1.95258 |
0.431 |
|
| 1984 |
Logan RA, Temkin H, Merritt FR, Mahajan S. GaInAsP/InP buried heterostructure formation by liquid phase epitaxy Applied Physics Letters. 45: 1275-1277. DOI: 10.1063/1.95110 |
0.381 |
|
| 1984 |
Temkin H, Dolan GJ, Olsson NA, Henry CH, Logan RA, Kazarinov RF, Johnson LF. 1.55‐μm InGaAsP ridge waveguide distributed feedback laser Applied Physics Letters. 45: 1178-1180. DOI: 10.1063/1.95083 |
0.383 |
|
| 1984 |
Panish MB, Temkin H. GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy Applied Physics Letters. 44: 785-787. DOI: 10.1063/1.94918 |
0.421 |
|
| 1984 |
Temkin H, Dupuis RD, Logan RA, Ziel JPvd. Schottky barrier restricted arrays of phase‐coupled AlGaAs quantum well lasers Applied Physics Letters. 44: 473-475. DOI: 10.1063/1.94822 |
0.39 |
|
| 1984 |
Ziel JPvd, Temkin H, Dupuis RD, Mikulyak RM. Mode‐locked picosecond pulse generation from high power phase‐locked GaAs laser arrays Applied Physics Letters. 44: 357-359. DOI: 10.1063/1.94774 |
0.33 |
|
| 1984 |
Temkin H, Logan RA, Ziel JPVd. Influence of orientation dependent growth kinetics on the performance of InGaAsP buried crescent lasers Applied Physics Letters. 44: 160-162. DOI: 10.1063/1.94720 |
0.382 |
|
| 1984 |
Mahajan S, Temkin H, Logan RA. Formation of optically induced catastrophic degradation lines in InGaAsP epilayers Applied Physics Letters. 44: 119-121. DOI: 10.1063/1.94570 |
0.332 |
|
| 1984 |
Reynolds CL, Holbrook WR, Nygren SF, Shimer JA, Logan RA, Temkin H. Schottky barrier restricted AlGaAs laser with an etched mesa ohmic contact Journal of Applied Physics. 56: 1969-1971. DOI: 10.1063/1.334228 |
0.385 |
|
| 1984 |
Temkin H, Dolan GJ, Logan RA. Optically pumped InGaAsP/InP distributed feedback lasers Journal of Applied Physics. 56: 2183-2186. DOI: 10.1063/1.334223 |
0.382 |
|
| 1984 |
Mahajan S, Dutt BV, Temkin H, Cava RJ, Bonner WA. Spinodal decomposition in InGaAsP epitaxial layers Journal of Crystal Growth. 68: 589-595. DOI: 10.1016/0022-0248(84)90466-4 |
0.373 |
|
| 1984 |
Dutt BV, Roccasecca DD, Temkin H, Bonner WA. A novel multi-slice LPE boat. I. Preliminary results on InGaAs alloys Journal of Crystal Growth. 66: 525-530. DOI: 10.1016/0022-0248(84)90150-7 |
0.364 |
|
| 1983 |
Henry C, Logan R, Temkin H, Merritt F. Absorption, emission, and gain spectra of 1.3 µm InGaAsP quaternary lasers Ieee Journal of Quantum Electronics. 19: 941-946. DOI: 10.1109/Jqe.1983.1071955 |
0.332 |
|
| 1983 |
Temkin H, Ziel JPvd, Linke RA, Logan RA. Single mode operation of 1.5‐μm cleaved‐coupled‐cavity InGaAsP lasers Applied Physics Letters. 43: 723-725. DOI: 10.1063/1.94490 |
0.34 |
|
| 1983 |
Ziel JPvd, Temkin H, Logan RA. Wavelength multiplexing of 1.31‐μm InGaAsP buried crescent laser arrays Applied Physics Letters. 43: 401-403. DOI: 10.1063/1.94394 |
0.345 |
|
| 1983 |
Digiuseppe MA, Temkin H, Peticolas L, Bonner WA. Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor Applied Physics Letters. 43: 906-908. DOI: 10.1063/1.94175 |
0.401 |
|
| 1983 |
Temkin H, Logan RA, Ziel JPvd. Integrated arrays of 1.3‐μm buried‐crescent lasers Applied Physics Letters. 42: 934-936. DOI: 10.1063/1.93805 |
0.355 |
|
| 1983 |
Ziel JPVD, Temkin H, Logan RA. Quaternary 1.5 μm (InGaAsP/InP) buried crescent lasers with separate optical confinement Electronics Letters. 19: 113-115. DOI: 10.1049/El:19830081 |
0.408 |
|
| 1983 |
Bonner WA, Temkin H. Preparation and characterization of high purity bulk InP Journal of Crystal Growth. 64: 10-14. DOI: 10.1016/0022-0248(83)90241-5 |
0.305 |
|
| 1983 |
Temkin H, Zipfel CL, Digiuseppe MA, Chin AK, Keramidas VG, Saul RH. InGaAsP LEDs for 1.3-μm optical transmission Bell System Technical Journal. 62: 1-24. DOI: 10.1002/J.1538-7305.1983.Tb04376.X |
0.347 |
|
| 1982 |
Vandenberg J, Temkin H, Hamm RA, Diguiseppe MA. Temperature-Dependent X-Ray Study of Alloyed Gold Metallization Contacts On In 1–x Ga x As y P 1–y /Inp Layers Mrs Proceedings. 18. DOI: 10.1557/Proc-18-421 |
0.313 |
|
| 1982 |
Mahajan S, Brasen D, Digiuseppe MA, Keramidas VG, Temkin H, Zipfel CL, Bonner WA, Schwartz GP. Manifestations of melt-carry-over in InP and InGaAsP layers grown by liquid phase epitaxy Applied Physics Letters. 41: 266-269. DOI: 10.1063/1.93496 |
0.365 |
|
| 1982 |
Keramidas VG, Temkin H, Bonner WA. Growth of InP and InGaAsP (Eg≥1.15 eV) layers by liquid phase epitaxy under phosphorus overpressure Applied Physics Letters. 40: 731-733. DOI: 10.1063/1.93208 |
0.367 |
|
| 1982 |
Temkin H, Mahajan S, DiGiuseppe MA, Dentai AG. Optically induced catastrophic degradation in InGaAsP/InP layers Applied Physics Letters. 40: 562-565. DOI: 10.1063/1.93180 |
0.356 |
|
| 1982 |
Vandenberg JM, Temkin H, Hamm RA, DiGiuseppe MA. Structural study of alloyed gold metallization contacts on InGaAsP/InP layers Journal of Applied Physics. 53: 7385-7389. DOI: 10.1063/1.330364 |
0.328 |
|
| 1982 |
Temkin H, Dutt BV, Bonner WA, Keramidas VG. Deep radiative levels in InP Journal of Applied Physics. 53: 7526-7533. DOI: 10.1063/1.330162 |
0.312 |
|
| 1982 |
Logan RA, Ziel JPvd, Temkin H, Henry CH. InGaAsP/InP (1.3 μm) buried-crescent lasers with separate optical confinement Electronics Letters. 18: 895-896. DOI: 10.1049/El:19820606 |
0.378 |
|
| 1982 |
Logan RA, Henry CH, Ziel JPvd, Temkin H. Low-threshold GaInAsP/InP mesa lasers Electronics Letters. 18: 782-783. DOI: 10.1049/El:19820528 |
0.363 |
|
| 1982 |
Temkin H, Chin AK, Dutt BV. Schottky barrier restricted GaAlAs laser Electronics Letters. 18: 701-703. DOI: 10.1049/El:19820477 |
0.348 |
|
| 1982 |
Digiuseppe MA, Temkin H, Bonner WA. Large area LPE growth of InGaAsP/InP double heterostructures on InP preserved in a phosphorus ambient Journal of Crystal Growth. 58: 279-284. DOI: 10.1016/0022-0248(82)90237-8 |
0.402 |
|
| 1982 |
Kazarinov RF, Nordland WA, Wagner WR, Temkin H, Manchon DD. Near-equilibrium LPE growth of In1-xGaxAsyP1-y lattice matched to InP Journal of Crystal Growth. 60: 235-238. DOI: 10.1016/0022-0248(82)90094-X |
0.32 |
|
| 1981 |
Temkin H, Keramidas VG, Pollack MA, Wagner WR. Temperature dependence of photoluminescence of n-InGaAsP Journal of Applied Physics. 52: 1574-1578. DOI: 10.1063/1.329640 |
0.367 |
|
| 1981 |
Temkin H, Zipfel CL, Keramidas VG. High-temperature degradation of InGaAsP/InP light emitting diodes Journal of Applied Physics. 52: 5377-5380. DOI: 10.1063/1.329398 |
0.352 |
|
| 1981 |
Temkin H, Chin AK, Digiuseppe MA. In0.53ga0.47as contact layer for 1.3 μm light-emitting diodes Electronics Letters. 17: 703-705. DOI: 10.1049/El:19810493 |
0.363 |
|
| 1980 |
Temkin H, McCoy RJ, Keramidas VG, Bonner WA. Ohmic contacts to p-type InP using Be-Au metallization Applied Physics Letters. 36: 444-446. DOI: 10.1063/1.91539 |
0.309 |
|
| 1979 |
Chin AK, Temkin H, Mahajan S, Bonner WA, Ballman AA, Dentai AG. Evaluation of defects in InP and InGaAsP by transmission cathodoluminescence Journal of Applied Physics. 50: 5707-5709. DOI: 10.1063/1.326760 |
0.313 |
|
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