Year |
Citation |
Score |
2013 |
Borkovska L, Korsunska N, Stara T, Kolomys O, Strelchuk V, Kryshtab T, Ostapenko S, Chornokur G, Phelan CM. Micro-photoluminescence study of bio-conjugated CdSe/ZnS nanocrystals Materials Research Society Symposium Proceedings. 1617: 157-162. DOI: 10.1557/opl.2013.1179 |
0.394 |
|
2012 |
Kryshtab TG, Borkovska LV, Kolomys OF, Korsunska NO, Strelchuk VV, Germash LP, Pechers'Ka KY, Chornokur G, Ostapenko SS, Phelan CM, Stroyuk OL. The effect of bio-conjugation on aging of the photoluminescence in CdSeTe-ZnS core-shell quantum dots Superlattices and Microstructures. 51: 353-362. DOI: 10.1016/J.Spmi.2011.12.005 |
0.717 |
|
2009 |
Borkovska LV, Korsunska NE, Kryshtab TG, Germash LP, Pecherska EY, Ostapenko S, Chornokur G. Effect of conjugation with biomolecules on photoluminescence and structural characteristics of CdSe/ZnS quantum dots Semiconductors. 43: 775-781. DOI: 10.1134/S1063782609060177 |
0.719 |
|
2009 |
Torchynska TV, Douda J, Calva PA, Ostapenko SS, Sierra RP. Photoluminescence of bioconjugated core-shell CdSe/ZnS quantum dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 836-838. DOI: 10.1116/1.3032904 |
0.481 |
|
2009 |
Chornokur G, Ostapenko S, Oleynik E, Phelan C, Korsunska N, Kryshtab T, Zhang J, Wolcott A, Sellers T. Scanning photoluminescent spectroscopy of bioconjugated quantum dots Superlattices and Microstructures. 45: 240-248. DOI: 10.1016/J.Spmi.2008.11.029 |
0.713 |
|
2009 |
Razykov TM, Contreras-Puente G, Chornokur GC, Dybjec M, Emirov Y, Ergashev B, Ferekides CS, Hubbimov A, Ikramov B, Kouchkarov KM, Mathew X, Morel D, Ostapenko S, Sanchez-Meza E, Stefanakos E, et al. Structural, photoluminescent and electrical properties of CdTe films with different compositions fabricated by CMBD Solar Energy. 83: 90-93. DOI: 10.1016/J.Solener.2008.07.003 |
0.632 |
|
2008 |
Chornokur G, Ostapenko S, Emirov Y, Korsunska N, Wolcott A, Zhang J, Phelan C, Nagaram A, Sellers T. Biologically engineered quantum dots for biomedical applications Materials Research Society Symposium Proceedings. 1095: 54-59. DOI: 10.1557/Proc-1095-Ee08-05 |
0.744 |
|
2008 |
Chornokur G, Ostapenko S, Emirov Y, Korsunska NE, Sellers T, Phelan C. Spectroscopic behavior of bioconjugated quantum dots Semiconductor Science and Technology. 23. DOI: 10.1088/0268-1242/23/7/075045 |
0.744 |
|
2008 |
Torchynska TV, Douda J, Ostapenko SS, Jiménez-Sandoval S, Phelan C, Zajac A, Zhukov T, Sellers T. Raman scattering study in bio-conjugated core-shell CdSe/ZnS quantum dots Journal of Non-Crystalline Solids. 354: 2885-2887. DOI: 10.1016/j.jnoncrysol.2007.09.101 |
0.367 |
|
2008 |
Morales Rodriguez M, Díaz Cano A, Torchynska TV, Polupan G, Ostapenko S. Size dependent photoluminescence of SiC nanocrystals Journal of Non-Crystalline Solids. 354: 2272-2275. DOI: 10.1016/J.Jnoncrysol.2007.09.017 |
0.406 |
|
2007 |
Torchynska TV, Velázquez Lozada E, Dybiec M, Ostapenko S, Eliseev PG, Stintz A, Malloy KJ, Pena Sierra R. Ground and excited state photoluminescence mapping on InAs/InGaAs quantum dot structures International Journal of Nanoscience. 6: 383-387. DOI: 10.1142/S0219581X07004912 |
0.344 |
|
2007 |
Espinola JLC, Dybic M, Ostapenko S, Torchynska TV, Polupan G. Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures Journal of Physics: Conference Series. 61: 180-184. DOI: 10.1088/1742-6596/61/1/036 |
0.413 |
|
2007 |
Dybiec M, Chornokur G, Ostapenko S, Wolcott A, Zhang JZ, Zajac A, Phelan C, Sellers T, Gerion D. Photoluminescence spectroscopy of bioconjugated CdSeZnS quantum dots Applied Physics Letters. 90. DOI: 10.1063/1.2752537 |
0.736 |
|
2007 |
Torchynska TV, Casas Espinola JL, Borkovska LV, Ostapenko S, Dybiec M, Polupan O, Korsunska NO, Stintz A, Eliseev PG, Malloy KJ. Thermal activation of excitons in asymmetric InAs dots-in-a-well In xGa1-xAs/GaAs structures Journal of Applied Physics. 101. DOI: 10.1063/1.2427105 |
0.498 |
|
2007 |
Lozada EV, Torchynska TV, Dybiec M, Ostapenko S, Eliseev PG, Stintz A, Malloy KJ. Photoluminescence energy trend for ground and excited states in InAs quantum dots in InGaAs/GaAs QW structures Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 272-275. DOI: 10.1002/Pssc.200673343 |
0.493 |
|
2007 |
Torchynska TV, Cano AD, Dybiec M, Ostapenko S, Rodrigez MM, Jiménez-Sandoval S, Vorobiev Y, Phelan C, Zajac A, Zhukov T, Sellers T. Raman scattering and SEM study of bio-conjugated core-shell CdSe/ZnS quantum dots Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 241-243. DOI: 10.1002/Pssc.200673249 |
0.481 |
|
2006 |
He S, Danyluk S, Tarasov I, Ostapenko S. Residual stresses in polycrystalline silicon sheet and their relation to electron-hole lifetime Applied Physics Letters. 89. DOI: 10.1063/1.2354308 |
0.309 |
|
2006 |
Torchynska TV, Díaz Cano A, Dybic M, Ostapenko S, Mynbaeva M. Stimulation of excitonic and defect-related luminescence in porous SiC Physica B: Condensed Matter. 376: 367-369. DOI: 10.1016/j.physb.2005.12.094 |
0.32 |
|
2006 |
Dybiec M, Borkovska L, Ostapenko S, Torchynska TV, Casas Espinola JL, Stintz A, Malloy KJ. Photoluminescence scanning on InAs/InGaAs quantum dot structures Applied Surface Science. 252: 5542-5545. DOI: 10.1016/J.Apsusc.2005.12.125 |
0.376 |
|
2005 |
Torchynska TV, Dybiec M, Ostapenko S. Ground and excited state energy trend in InAs InGaAs quantum dots monitored by scanning photoluminescence spectroscopy Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/PhysRevB.72.195341 |
0.363 |
|
2005 |
Korsunska NE, Dybiec M, Zhukov L, Ostapenko S, Zhukov T. Reversible and non-reversible photo-enhanced luminescence in CdSe/ZnS quantum dots Semiconductor Science and Technology. 20: 876-881. DOI: 10.1088/0268-1242/20/8/044 |
0.52 |
|
2005 |
Torchynska TV, Hernandez AV, Cano AD, Jiménez-Sandoval S, Ostapenko S, Mynbaeva M. Raman-scattering and structure investigations on porous SiC layers Journal of Applied Physics. 97. DOI: 10.1063/1.1840095 |
0.302 |
|
2005 |
Nakayashiki K, Rohatgi A, Ostapenko S, Tarasov I. Minority-carrier lifetime enhancement in edge-defined film-fed grown Si through rapid thermal processing-assisted reduction of hydrogen-defect dissociation Journal of Applied Physics. 97. DOI: 10.1063/1.1833577 |
0.35 |
|
2005 |
Hernandez AV, Torchynska TV, Matsumoto Y, Sandoval SJ, Dybiec M, Ostapenko S, Shcherbina LV. Optical investigation of Si nano-crystals in amorphous silicon matrix Microelectronics Journal. 36: 510-513. DOI: 10.1016/j.mejo.2005.02.065 |
0.344 |
|
2005 |
Dybiec M, Ostapenko S, Torchynska TV, Lozada EV, Eliseev PG, Stintz A, Malloy KJ. Photoluminescence mapping on InAs/InGaAs quantum dot structures Physica Status Solidi C: Conferences. 2: 2951-2954. DOI: 10.1002/Pssc.200460708 |
0.432 |
|
2005 |
Torchynska TV, Vivas Hernandez A, Dybiec M, Emirov Y, Tarasov I, Ostapenko S, Matsumoto Y. Optical characterization of crystalline silicon embedded in a-Si matrix Physica Status Solidi C: Conferences. 2: 1832-1836. DOI: 10.1002/pssc.200460552 |
0.404 |
|
2005 |
Korsunska NE, Kushnirenko V, Tarasov I, Ostapenko S. Temperature activated 1.2 eV photoluminescence in semi-insulating SiC wafers Physica Status Solidi C: Conferences. 2: 1892-1896. DOI: 10.1002/Pssc.200460521 |
0.373 |
|
2005 |
Dybiec M, Korsunska NE, Zhukov P, Ostapenko S, Sellers T, Zajac A, Zhukov T. Photo-enhanced luminescence in bio-conjugated quantum dots for ovarian cancer biomarkers 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 35-38. |
0.389 |
|
2004 |
Korsunska NE, Tarasov I, Kushnirenko V, Ostapenko S. High-temperature photoluminescence spectroscopy in p-type SiC Semiconductor Science and Technology. 19: 833-838. DOI: 10.1088/0268-1242/19/7/009 |
0.398 |
|
2004 |
Tarasov I, Ostapenko S, Nakayashiki K, Rohatgi A. Defect passivation in multicrystalline silicon for solar cells Applied Physics Letters. 85: 4346-4348. DOI: 10.1063/1.1815380 |
0.346 |
|
2004 |
Dybiec M, Ostapenko S, Torchynska TV, Losada EV. Scanning photoluminescence spectroscopy in InAs/InGaAs quantum-dot structures Applied Physics Letters. 84: 5165-5167. DOI: 10.1063/1.1763979 |
0.54 |
|
2004 |
Tarasov I, Dybiec M, Ostapenko S, Rohatgi A, Yelundur V, Gabor AM. Scanning room temperature photoluminescence in SiNx:H layers Epj Applied Physics. 27: 289-291. DOI: 10.1051/Epjap:2004046 |
0.402 |
|
2003 |
Tarasov I, Dybiec M, Ostapenko S, Torchynska TV. Metastable defects in Si3N4 layers accessed by scanning photoluminescence Physica B: Condensed Matter. 340: 1124-1128. DOI: 10.1016/j.physb.2003.09.094 |
0.301 |
|
2003 |
Suleimanov YM, Lulu S, Tarasov I, Ostapenko S, Heydemann VD, Roth MD, Kordina O, MacMillan MF, Saddow SE. Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Materials Science Forum. 433: 59-62. |
0.315 |
|
2002 |
Suleimanov YM, Lulu S, Tarasov I, Ostapenko S, Saddow SE, Torchinska TV, Heydemann VD, Roth MD, Kordina O, MacMillan MF. Spatially Resolved Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Wafers Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K2.9 |
0.405 |
|
2002 |
Ostapenko S, Suleimanov YM, Tarasov I, Lulu S, Saddow SE. Thermally stimulated luminescence in full-size 4H-SiC wafers Journal of Physics Condensed Matter. 14: 13381-13386. DOI: 10.1088/0953-8984/14/48/392 |
0.395 |
|
2001 |
Tarasov I, Ostapenko S, Seifert W, Kittler M, Kaleis JP. Defect diagnostics in multicrystalline silicon using scanning techniques Physica B: Condensed Matter. 308: 1133-1136. DOI: 10.1016/S0921-4526(01)00912-7 |
0.373 |
|
2001 |
Suleimanov YM, Zaharchenko I, Ostapenko S. Luminescence characterization of titanium related defects in 6H-SiC Physica B: Condensed Matter. 308: 714-717. DOI: 10.1016/S0921-4526(01)00879-1 |
0.367 |
|
2000 |
Ostapenko S, Tarasov I, Kalejs JP, Haessler C, Reisner EU. Defect monitoring using scanning photoluminescence spectroscopy in multicrystalline silicon wafers Semiconductor Science and Technology. 15: 840-848. DOI: 10.1088/0268-1242/15/8/310 |
0.42 |
|
2000 |
Tarasov I, Ostapenko S, Haessler C, Reisner EU. Spatially resolved defect diagnostics in multicrystalline silicon for solar cells Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 71: 51-55. DOI: 10.1016/S0921-5107(99)00348-7 |
0.4 |
|
1999 |
Koshka Y, Ostapenko S, Tarasov I, McHugo S, Kalejs JP. Scanning room-temperature photoluminescence in polycrystalline silicon Applied Physics Letters. 74: 1555-1557. DOI: 10.1063/1.123614 |
0.363 |
|
1999 |
Tarasov I, Ostapenko S, Feifer V, McHugo S, Koveshnikov SV, Weber J, Haessler C, Reisner EU. Defect diagnostics using scanning photoluminescence in multicrystalline silicon Physica B: Condensed Matter. 273: 549-552. DOI: 10.1016/S0921-4526(99)00570-0 |
0.391 |
|
1997 |
Ostapenko S, Koshka Y, Jastrzebski L, Smeltzer RK. Enhanced hydrogenation in polycrystalline Si thin films using ultrasound treatment Proceedings of Spie - the International Society For Optical Engineering. 3014: 176-183. DOI: 10.1117/12.270294 |
0.341 |
|
1996 |
Ostapenko S, Jastrzebski L, Lagowski J, Smeltzer RK. Enhanced hydrogenation in polycrystalline silicon thin films using low-temperature ultrasound treatment Applied Physics Letters. 68: 2873-2875. DOI: 10.1063/1.116353 |
0.319 |
|
1995 |
Savchouk AU, Ostapenko S, Nowak G, Lagowski J, Jastrzebski L. Band-tail photoluminescence in polycrystalline silicon thin films Applied Physics Letters. 67: 82-84. DOI: 10.1063/1.115515 |
0.409 |
|
1995 |
Ostapenko S, Savchuk AU, Nowak G, Lagowski J, Hoff AM. Enhancement of room-temperature photoluminescence in thin-film polycrystalline silicon produced by low power laser annealing Applied Physics Letters. 67: 2942. DOI: 10.1063/1.114819 |
0.327 |
|
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