Year |
Citation |
Score |
2012 |
Liu L, Zhou H, Cheng R, Chen Y, Lin YC, Qu Y, Bai J, Ivanov IA, Liu G, Huang Y, Duan X. A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene. Journal of Materials Chemistry. 22: 1498-1503. PMID 25414547 DOI: 10.1039/C1Jm14272K |
0.763 |
|
2012 |
Cheng R, Bai J, Liao L, Zhou H, Chen Y, Liu L, Lin YC, Jiang S, Huang Y, Duan X. High-frequency self-aligned graphene transistors with transferred gate stacks. Proceedings of the National Academy of Sciences of the United States of America. 109: 11588-92. PMID 22753503 DOI: 10.1073/Pnas.1205696109 |
0.788 |
|
2012 |
Liao L, Bai J, Cheng R, Zhou H, Liu L, Liu Y, Huang Y, Duan X. Scalable fabrication of self-aligned graphene transistors and circuits on glass. Nano Letters. 12: 2653-7. PMID 21648419 DOI: 10.1021/Nl201922C |
0.637 |
|
2011 |
Liu Y, Cheng R, Liao L, Zhou H, Bai J, Liu G, Liu L, Huang Y, Duan X. Plasmon resonance enhanced multicolour photodetection by graphene. Nature Communications. 2: 579. PMID 22146398 DOI: 10.1038/Ncomms1589 |
0.561 |
|
2011 |
Bai J, Liao L, Zhou H, Cheng R, Liu L, Huang Y, Duan X. Top-gated chemical vapor deposition grown graphene transistors with current saturation. Nano Letters. 11: 2555-9. PMID 21548551 DOI: 10.1021/Nl201331X |
0.669 |
|
2011 |
Xu G, Torres CM, Tang J, Bai J, Song EB, Huang Y, Duan X, Zhang Y, Wang KL. Edge effect on resistance scaling rules in graphene nanostructures. Nano Letters. 11: 1082-6. PMID 21322591 DOI: 10.1021/Nl103966T |
0.57 |
|
2011 |
Qu Y, Bai J, Liao L, Cheng R, Lin YC, Huang Y, Guo T, Duan X. Synthesis and electric properties of dicobalt silicide nanobelts. Chemical Communications (Cambridge, England). 47: 1255-7. PMID 21103514 DOI: 10.1039/C0Cc03922E |
0.691 |
|
2010 |
Xu G, Torres CM, Song EB, Tang J, Bai J, Duan X, Zhang Y, Wang KL. Enhanced conductance fluctuation by quantum confinement effect in graphene nanoribbons. Nano Letters. 10: 4590-4. PMID 20939609 DOI: 10.1021/Nl1025979 |
0.382 |
|
2010 |
Liao L, Bai J, Cheng R, Lin YC, Jiang S, Qu Y, Huang Y, Duan X. Sub-100 nm channel length graphene transistors. Nano Letters. 10: 3952-6. PMID 20815334 DOI: 10.1021/Nl101724K |
0.789 |
|
2010 |
Liao L, Lin YC, Bao M, Cheng R, Bai J, Liu Y, Qu Y, Wang KL, Huang Y, Duan X. High-speed graphene transistors with a self-aligned nanowire gate. Nature. 467: 305-8. PMID 20811365 DOI: 10.1038/Nature09405 |
0.798 |
|
2010 |
Bai J, Cheng R, Xiu F, Liao L, Wang M, Shailos A, Wang KL, Huang Y, Duan X. Very large magnetoresistance in graphene nanoribbons. Nature Nanotechnology. 5: 655-9. PMID 20693988 DOI: 10.1038/Nnano.2010.154 |
0.586 |
|
2010 |
Liao L, Bai J, Lin YC, Qu Y, Huang Y, Duan X. High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics. Advanced Materials (Deerfield Beach, Fla.). 22: 1941-5. PMID 20526997 DOI: 10.1002/Adma.200904415 |
0.782 |
|
2010 |
Liao L, Bai J, Cheng R, Lin YC, Jiang S, Huang Y, Duan X. Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics. Nano Letters. 10: 1917-21. PMID 20380441 DOI: 10.1021/Nl100840Z |
0.785 |
|
2010 |
Liao L, Bai J, Qu Y, Lin YC, Li Y, Huang Y, Duan X. High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. Proceedings of the National Academy of Sciences of the United States of America. 107: 6711-5. PMID 20308584 DOI: 10.1073/Pnas.0914117107 |
0.788 |
|
2010 |
Bai J, Zhong X, Jiang S, Huang Y, Duan X. Graphene nanomesh. Nature Nanotechnology. 5: 190-4. PMID 20154685 DOI: 10.1038/nnano.2010.8 |
0.653 |
|
2010 |
Liao L, Bai J, Qu Y, Huang Y, Duan X. Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors. Nanotechnology. 21: 015705. PMID 19946170 DOI: 10.1088/0957-4484/21/1/015705 |
0.616 |
|
2009 |
Lin Y, Bai J, Huang Y. Self-aligned nanolithography in a nanogap. Nano Letters. 9: 2234-2238. PMID 19413343 DOI: 10.1021/Nl9000597 |
0.702 |
|
2009 |
Bai J, Duan X, Huang Y. Rational fabrication of graphene nanoribbons using a nanowire etch mask. Nano Letters. 9: 2083-7. PMID 19344151 DOI: 10.1021/Nl900531N |
0.652 |
|
2008 |
Lin YC, Lu KC, Wu WW, Bai J, Chen LJ, Tu KN, Huang Y. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices. Nano Letters. 8: 913-8. PMID 18266331 DOI: 10.1021/Nl073279R |
0.712 |
|
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