Kathryn M. Kelchner, Ph.D.
Affiliations: | 2012 | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Kathryn Kelchner"Parents
Sign in to add mentor| Steven P Denbaars | grad student | 2012 | UC Santa Barbara | |
| (Nonpolar m-plane gallium Nitride-based Laser Diodes in the Blue Spectrum.) | ||||
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Publications
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| Mensi M, Ivanov R, Uzdavinys TK, et al. (2017) Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy Acs Photonics. 5: 528-534 |
| Kuritzky LY, Myers DJ, Nedy J, et al. (2015) Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN "double miscut" substrates Applied Physics Express. 8 |
| Nedy JG, Young NG, Kelchner KM, et al. (2015) Low damage dry etch for III-nitride light emitters Semiconductor Science and Technology. 30 |
| Kelchner KM, Kuritzky LY, Nakamura S, et al. (2015) Stable vicinal step orientations in m-plane GaN Journal of Crystal Growth. 411: 56-62 |
| Marcinkevičius S, Kelchner KM, Nakamura S, et al. (2014) Optical properties and carrier dynamics in m -plane InGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 690-693 |
| Pfaff NA, Kelchner KM, Feezell DF, et al. (2013) Thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN light-emitting diodes Applied Physics Express. 6 |
| Armstrong AM, Kelchner K, Nakamura S, et al. (2013) Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN Applied Physics Letters. 103 |
| Pourhashemi A, Farrell RM, Hardy MT, et al. (2013) Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202̄1̄) GaN substrates Applied Physics Letters. 103 |
| Marcinkevičius S, Zhao Y, Kelchner KM, et al. (2013) Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra Applied Physics Letters. 103 |
| Marcinkevičius S, Kelchner KM, Kuritzky LY, et al. (2013) Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells Applied Physics Letters. 103 |