Suku Kim, Ph.D. - Publications

Affiliations: 
University of Florida, Gainesville, Gainesville, FL, United States 
Area:
advanced electronic materials

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Kim KE, Houh Y, Lee J, Kim S, Cho D, Park HJ. Downregulation of Erythroid Differentiation Regulator 1 (Erdr1) plays a critical role in psoriasis pathogenesis. Experimental Dermatology. PMID 26990875 DOI: 10.1111/exd.13005  0.304
2005 Kang BS, Kim S, Ren F, Gila BP, Abernathy CR, Pearton SJ. AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing Ieee Sensors Journal. 5: 677-680. DOI: 10.1109/Jsen.2005.848136  0.317
2004 Kang BS, Kim S, Ren F, Ip K, Heo YW, Gila B, Abernathy CR, Norton DP, Pearton SJ. Detection of C[sub 2]H[sub 4] Using Wide-Bandgap Semiconductor Sensors Journal of the Electrochemical Society. 151: G468. DOI: 10.1149/1.1758817  0.334
2004 Kang BS, Mehandru R, Kim S, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Hydrogen-induced reversible changes in drain current in Sc 2O 3/AlGaN/GaN high electron mobility transistors Applied Physics Letters. 84: 4635-4637. DOI: 10.1063/1.1759372  0.31
2004 Ip K, Heo YW, Baik KH, Norton DP, Pearton SJ, Kim S, LaRoche JR, Ren F. Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO Applied Physics Letters. 84: 2835-2837. DOI: 10.1063/1.1705726  0.3
2004 Kim S, Kang BS, Ren F, Heo YW, Ip K, Norton DP, Pearton SJ. Contacts to p-type ZnMgO Applied Physics Letters. 84: 1904-1906. DOI: 10.1063/1.1669082  0.305
2004 Kim S, Kang BS, Ren F, Ip K, Heo YW, Norton DP, Pearton SJ. Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen Applied Physics Letters. 84: 1698-1700. DOI: 10.1063/1.1664012  0.311
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