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Yi-Mu Lee, Ph.D. - Publications

Affiliations: 
North Carolina State University, Raleigh, NC 
Area:
ultra-thin Si oxyitride devices
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Park K, Ikushiro H, Seo HS, Shin KO, Kim YI, Kim JY, Lee YM, Yano T, Holleran WM, Elias P, Uchida Y. ER stress stimulates production of the key antimicrobial peptide, cathelicidin, by forming a previously unidentified intracellular S1P signaling complex. Proceedings of the National Academy of Sciences of the United States of America. PMID 26903652 DOI: 10.1073/pnas.1504555113  0.411
2015 Lee YM, Song BC, Yeum KJ. Impact of Volatile Anesthetics on Oxidative Stress and Inflammation. Biomed Research International. 2015: 242709. PMID 26101769 DOI: 10.1155/2015/242709  0.323
2004 Lee YM, Wu Y, Lucovsky G. Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress Microelectronics Reliability. 44: 207-212. DOI: 10.1016/J.Microrel.2003.07.002  0.533
2003 Lee YM, Wu Y, Bae C, Hong JG, Lucovsky G. Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress Solid-State Electronics. 47: 71-76. DOI: 10.1016/S0038-1101(02)00257-5  0.602
2002 Lee Y, Wu Y, Hong JG, Lucovsky G. Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B2.9  0.604
1999 Lucovsky G, Wu Y, Lee Y, Yang H, Niimi H. Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics Mrs Proceedings. 592. DOI: 10.1557/Proc-592-317  0.513
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