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Hai Lu, Ph.D. - Publications

Affiliations: 
2003 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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138 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Wu Y, Liu B, Li Z, Tao T, Xie Z, Xiu X, Chen P, Chen D, Lu H, Shi Y, Zhang R, Zheng Y. Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted–molecular beam epitaxy Journal of Crystal Growth. 506: 30-35. DOI: 10.1016/J.Jcrysgro.2018.10.019  0.388
2016 Zhang Z, Li Y, Liu W, Yang J, Ma Y, Lu H, Sun Y, Jiang H, Chen H. Controllable lasing behavior enabled by compound dielectric waveguide grating structures. Optics Express. 24: 19458-19466. PMID 27557223  0.553
2016 Jiang T, Zhang YD, Chen Q, Gao Q, Zhu XC, Zhou JS, Shi JQ, Lu H, Tan L, Yu JT. TREM2 modifies microglial phenotype and provides neuroprotection in P301S tau transgenic mice. Neuropharmacology. PMID 26802771 DOI: 10.1016/j.neuropharm.2016.01.028  0.328
2016 Jiang T, Wan Y, Zhang YD, Zhou JS, Gao Q, Zhu XC, Shi JQ, Lu H, Tan L, Yu JT. TREM2 Overexpression has No Improvement on Neuropathology and Cognitive Impairment in Aging APPswe/PS1dE9 Mice. Molecular Neurobiology. PMID 26780455 DOI: 10.1007/s12035-016-9704-x  0.327
2015 Wu WJ, Shi J, Hu G, Yu X, Lu H, Yang ML, Liu B, Wu ZX. Wnt/β-catenin signaling inhibits FBXW7 expression by upregulation of microRNA-770 in hepatocellular carcinoma. Tumour Biology : the Journal of the International Society For Oncodevelopmental Biology and Medicine. PMID 26602384 DOI: 10.1007/s13277-015-4452-5  0.33
2012 Inushima T, K. Maude D, Lu H, J. Schaff W, Iizuka T, Kimura S, Yamamoto A, Fukui K. Superconducting Properties of InN with Low Carrier Density near the Mott Transition Journal of the Physical Society of Japan. 81: 044704. DOI: 10.1143/Jpsj.81.044704  0.356
2012 Rauch C, Tuomisto F, King PDC, Veal TD, Lu H, Schaff WJ. Self-compensation in highly n-type InN Applied Physics Letters. 101: 11903. DOI: 10.1063/1.4732508  0.322
2010 Davydov VY, Klochikhin AA, Smirnov AN, Strashkova IY, Krylov AS, Lu H, Schaff WJ, Lee HM, Hong YL, Gwo S. Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn Semiconductors. 44: 161-170. DOI: 10.1134/S1063782610020065  0.316
2010 Rauch C, Reurings F, Tuomisto F, Veal TD, McConville CF, Lu H, Schaff WJ, Gallinat CS, Koblmüller G, Speck JS, Egger W, Löwe B, Ravelli L, Sojak S. In-vacancies in Si-doped InN Physica Status Solidi (a) Applications and Materials Science. 207: 1083-1086. DOI: 10.1002/Pssa.200983120  0.381
2009 Jones RE, Li SX, Yu KM, Ager JW, Haller EE, Walukiewicz W, Lu H, Schaff WJ. Properties of native point defects in In1-xAlxN alloys Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/9/095406  0.363
2009 Denisenko A, Pietzka C, Chuvilin A, Kaiser U, Lu H, Schaff WJ, Kohn E. Depletion of surface accumulation charge in InN by anodic oxidation Journal of Applied Physics. 105: 33702. DOI: 10.1063/1.3073930  0.33
2009 Darakchieva V, Hofmann T, Schubert M, Sernelius BE, Monemar B, Persson POA, Giuliani F, Alves E, Lu H, Schaff WJ. Free electron behavior in InN: On the role of dislocations and surface electron accumulation Applied Physics Letters. 94: 22109. DOI: 10.1063/1.3065030  0.408
2008 King PDC, Veal TD, McConville CF, Fuchs F, Furthmüller J, Bechstedt F, Schörmann J, As DJ, Lischka K, Lu H, Schaff WJ. Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations Physical Review B. 77. DOI: 10.1103/Physrevb.77.115213  0.363
2008 King PDC, Veal TD, Jefferson PH, Hatfield SA, Piper LFJ, McConville CF, Fuchs F, Furthmüller J, Bechstedt F, Lu H, Schaff WJ. Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors Physical Review B. 77. DOI: 10.1103/Physrevb.77.045316  0.419
2008 Wilke I, Ascazubi R, Lu H, Schaff WJ. Terahertz emission from silicon and magnesium doped indium nitride Applied Physics Letters. 93: 221113. DOI: 10.1063/1.3043450  0.318
2008 Inushima T, Fukui K, Lu H, Schaff WJ. Phonon polariton of InN observed by infrared synchrotron radiation Applied Physics Letters. 92: 171905. DOI: 10.1063/1.2918848  0.336
2008 King P, Veal T, Lu H, Hatfield S, Schaff W, McConville C. The influence of conduction band plasmons on core-level photoemission spectra of InN Surface Science. 602: 871-875. DOI: 10.1016/J.Susc.2007.12.026  0.399
2008 Hofmann T, Darakchieva V, Monemar B, Lu H, Schaff W, Schubert M. Optical Hall Effect in Hexagonal InN Journal of Electronic Materials. 37: 611-615. DOI: 10.1007/S11664-008-0385-8  0.432
2008 Davydov VY, Klochikhin AA, Smirnov MB, Kitaev YE, Smirnov AN, Lundina EY, Lu H, Schaff WJ, Lee HM, Lin HW, Hong YL, Gwo S. SIMS and Raman studies of Mg-doped InN Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1648-1651. DOI: 10.1002/Pssc.200778563  0.353
2008 Franssen G, Kamińska A, Suski T, Gorczyca I, Christensen NE, Svane A, Lu H, Schaff WJ, Dimakis E, Georgakilas A, Che SB, Ishitani Y, Yoshikawa A. Conduction band filling in In‐rich InGaN and InN under hydrostatic pressure Physica Status Solidi (C). 5: 1488-1490. DOI: 10.1002/Pssc.200778410  0.334
2008 King PDC, Veal TD, Lu H, Jefferson PH, Hatfield SA, Schaff WJ, McConville CF. Surface electronic properties of n- and p-type InGaN alloys Physica Status Solidi (B). 245: 881-883. DOI: 10.1002/Pssb.200778452  0.362
2007 Veal TD, King PDC, Jefferson PH, Piper LFJ, McConville CF, Lu H, Schaff WJ, Anderson PA, Durbin SM, Muto D, Naoi H, Nanishi Y. In adlayers on c -plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.075313  0.353
2007 King PDC, Veal TD, Jefferson PH, McConville CF, Lu H, Schaff WJ. Variation of band bending at the surface of Mg-doped InGaN: Evidence ofp-type conductivity across the composition range Physical Review B. 75. DOI: 10.1103/Physrevb.75.115312  0.39
2007 Tsen KT, Kiang JG, Ferry DK, Lu H, Schaff WJ, Lin H, Gwo S. Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy Journal of Physics: Condensed Matter. 19: 236219. DOI: 10.1088/0953-8984/19/23/236219  0.347
2007 Plesiewicz J, Suski T, Dmowski L, Walukiewicz W, Yu KM, Korman A, Ratajczak R, Stonert A, Lu H, Schaff W. Towards identification of localized donor states in InN Semiconductor Science and Technology. 22: 1161-1164. DOI: 10.1088/0268-1242/22/10/014  0.382
2007 Davydov VY, Klochikhin AA, Smirnov MB, Smirnov AN, Goncharuk IN, Kurdyukov DA, Lu H, Schaff WJ, Lee HM, Lin HW, Gwo S. Experimental and theoretical studies of lattice dynamics of Mg-doped InN Applied Physics Letters. 91. DOI: 10.1063/1.2785137  0.327
2007 Hofstetter D, Despont L, Garnier MG, Baumann E, Giorgetta FR, Aebi P, Kirste L, Lu H, Schaff WJ. Structural investigations of epitaxial InN by x-ray photoelectron diffraction and x-ray diffraction Applied Physics Letters. 90. DOI: 10.1063/1.2738372  0.318
2007 Tsen KT, Kiang JG, Ferry DK, Lu H, Schaff WJ, Lin H, Gwo S. Subpicosecond time-resolved Raman studies of electron–longitudinal optical phonon interactions in InN Applied Physics Letters. 90: 172108. DOI: 10.1063/1.2732174  0.307
2007 Faleev N, Lu H, Schaff WJ. Low density of threading dislocations in AlN grown on sapphire Journal of Applied Physics. 101: 93516. DOI: 10.1063/1.2728755  0.372
2007 Tsen KT, Kiang JG, Ferry DK, Lu H, Schaff WJ, Lin H, Gwo S. Direct measurements of the lifetimes of longitudinal optical phonon modes and their dynamics in InN Applied Physics Letters. 90: 152107. DOI: 10.1063/1.2722200  0.305
2007 Cimalla V, Lebedev V, Wang CY, Ali M, Ecke G, Polyakov VM, Schwierz F, Ambacher O, Lu H, Schaff WJ. Reduced surface electron accumulation at InN films by ozone induced oxidation Applied Physics Letters. 90: 152106. DOI: 10.1063/1.2721365  0.424
2007 Veal TD, King PDC, Walker M, McConville CF, Lu H, Schaff WJ. In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies Physica B-Condensed Matter. 401: 351-354. DOI: 10.1016/J.Physb.2007.08.185  0.384
2007 Liliental-Weber Z, Lu H, Schaff WJ, Kryliouk O, Park HJ, Mangum J, Anderson T. Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3 Physica Status Solidi (C). 4: 2469-2473. DOI: 10.1002/Pssc.200674907  0.357
2007 Ager JW, Jones RE, Yamaguchi DM, Yu KM, Walukiewicz W, Li SX, Haller EE, Lu H, Schaff WJ. p-type InN and In-rich InGaN Physica Status Solidi (B). 244: 1820-1824. DOI: 10.1002/Pssb.200674762  0.358
2007 Suski T, Franssen G, Teisseyre H, Khachapuridze A, Dmowski LH, Plesiewicz JA, Kamińska A, Lu H, Schaff W. High pressure studies of radiative recombination mechanisms in InN Physica Status Solidi B-Basic Solid State Physics. 244: 38-41. DOI: 10.1002/Pssb.200672504  0.344
2007 Franssen G, Suski T, Perlin P, Bohdan R, Trzeciakowski W, Teisseyre H, Khachapuridze A, Targowski G, Krowicki K, Czernecki R, Leszczyński M, Kurouchi M, Nanishi Y, Lu H, Schaff W. Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure Physica Status Solidi B-Basic Solid State Physics. 244: 32-37. DOI: 10.1002/Pssb.200672503  0.319
2007 Veal TD, Piper LFJ, Phillips MR, Zareie MH, Lu H, Schaff WJ, McConville CF. Doping-dependence of subband energies in quantized electron accumulation at InN surfaces Physica Status Solidi (a). 204: 536-542. DOI: 10.1002/Pssa.200673226  0.424
2006 Jones RE, Yu KM, Li SX, Walukiewicz W, Ager JW, Haller EE, Lu H, Schaff WJ. Evidence for p-type doping of InN. Physical Review Letters. 96: 125505. PMID 16605926 DOI: 10.1103/Physrevlett.96.125505  0.369
2006 Lu C, Duan X, Lu H, Schaff WJ. Transmission electron microscopy study of epitaxial InN thin films grown on c-plane sapphire Journal of Materials Research. 21: 1693-1699. DOI: 10.1557/Jmr.2006.0215  0.437
2006 Pačebutas V, Aleksejenko G, Krotkus A, Ager JW, Walukiewicz W, Lu H, Schaff WJ. Optical bleaching effect in InN epitaxial layers Applied Physics Letters. 88. DOI: 10.1063/1.2202117  0.358
2006 Ascázubi R, Wilke I, Cho S, Lu H, Schaff WJ. Ultrafast recombination in Si-doped InN Applied Physics Letters. 88: 112111. DOI: 10.1063/1.2185407  0.405
2006 Thakur JS, Naik R, Naik VM, Haddad D, Auner GW, Lu H, Schaff WJ. Temperature dependence of mobility and carrier density in InN films Journal of Applied Physics. 99. DOI: 10.1063/1.2158133  0.4
2006 Liliental-Weber Z, Zakharov DN, Yu KM, Ager JW, Walukiewicz W, Haller EE, Lu H, Schaff WJ. Compositional modulation in InxGa1-xNInxGa1-xN Physica B-Condensed Matter. 376: 468-472. DOI: 10.1016/J.Physb.2005.12.120  0.384
2006 Jones RE, Li SX, Hsu L, Yu KM, Walukiewicz W, Liliental-Weber Z, Ager JW, Haller EE, Lu H, Schaff WJ. Native-defect-controlled n-type conductivity in InN Physica B-Condensed Matter. 376: 436-439. DOI: 10.1016/J.Physb.2005.12.112  0.368
2006 Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Native defects in InxGa1−xN alloys Physica B-Condensed Matter. 376: 432-435. DOI: 10.1016/J.Physb.2005.12.111  0.329
2006 Walukiewicz W, Jones R, Li S, Yu K, Ager J, Haller E, Lu H, Schaff W. Dopants and defects in InN and InGaN alloys Journal of Crystal Growth. 288: 278-282. DOI: 10.1016/J.Jcrysgro.2005.12.082  0.425
2006 Tsen K, Poweleit C, Ferry D, Lu H, Schaff WJ. Optical studies of high-field carrier transport of InN thick film grown on GaN Journal of Crystal Growth. 288: 289-293. DOI: 10.1016/J.Jcrysgro.2005.12.009  0.424
2006 Goldhahn R, Schley P, Winzer AT, Rakel M, Cobet C, Esser N, Lu H, Schaff WJ. Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN Journal of Crystal Growth. 288: 273-277. DOI: 10.1016/J.Jcrysgro.2005.12.007  0.377
2006 Shubina TV, Plotnikov DS, Vasson A, Leymarie J, Larsson M, Holtz PO, Monemar B, Lu H, Schaff WJ, Kop'ev PS. Surface-plasmon resonances in indium nitride with metal-enriched nano-particles Journal of Crystal Growth. 288: 230-235. DOI: 10.1016/J.Jcrysgro.2005.12.003  0.31
2006 Cimalla V, Niebelschütz M, Ecke G, Ambacher O, Goldhahn R, Lu H, Schaff WJ. The conductivity of Mg-doped InN Physica Status Solidi (C). 3: 1721-1724. DOI: 10.1002/Pssc.200565473  0.405
2006 Hofmann T, Chavdarov T, Darakchieva V, Lu H, Schaff WJ, Schubert M. Anisotropy of the Γ-point effective mass and mobility in hexagonal InN Physica Status Solidi (C). 3: 1854-1857. DOI: 10.1002/Pssc.200565467  0.359
2006 Piper LFJ, Veal TD, McConville CF, Lu H, Schaff WJ. InN: Fermi level stabilization by low‐energy ion bombardment Physica Status Solidi (C). 3: 1841-1845. DOI: 10.1002/Pssc.200565104  0.378
2006 Inushima T, Kato N, Maude DK, Lu H, Schaff WJ, Tauk R, Meziani Y, Ruffenack S, Briot O, Knap W, Gil B, Miwa H, Yamamoto A, Muto D, Nanishi Y, et al. Superconductivity of InN with a well defined Fermi surface Physica Status Solidi B-Basic Solid State Physics. 243: 1679-1686. DOI: 10.1002/Pssb.200565419  0.388
2006 Davydov VY, Klochikhin AA, Goncharuk IN, Smirnov AN, Sakharov AV, Skvortsov AP, Yagovkina MA, Lebedev VM, Lu H, Schaff WJ. Resonant Raman scattering in InGaN alloys Physica Status Solidi (B) Basic Research. 243: 1494-1498. DOI: 10.1002/Pssb.200565350  0.321
2006 Schley P, Goldhahn R, Winzer AT, Gobsch G, Cimalla V, Ambacher O, Rakel M, Cobet C, Esser N, Lu H, Schaff WJ. Transition energies and Stokes shift analysis for In-rich InGaN alloys Physica Status Solidi B-Basic Solid State Physics. 243: 1572-1576. DOI: 10.1002/Pssb.200565303  0.444
2006 Dmowski LH, Dybko K, Plesiewicz J, Suski T, Lu H, Schaff W, Kurouchi M, Nanishi Y, Konczewicz L, Cimalla V, Ambacher O. Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments Physica Status Solidi B-Basic Solid State Physics. 243: 1537-1540. DOI: 10.1002/Pssb.200565293  0.395
2006 Arnaudov B, Paskova T, Evtimova S, Monemar B, Lu H, Schaff WJ. Electron concentration and mobility profiles in InN layers grown by MBE Physica Status Solidi (a). 203: 1681-1685. DOI: 10.1002/Pssa.200565265  0.418
2006 Veal TD, Piper LFJ, Phillips MR, Zareie MH, Lu H, Schaff WJ, McConville CF. Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces Physica Status Solidi (a). 203: 85-92. DOI: 10.1002/Pssa.200563522  0.437
2006 Valcheva E, Alexandrova S, Dimitrov S, Lu H, Schaff WJ. Recombination processes with and without momentum conservation in degenerate InN Physica Status Solidi (a). 203: 75-79. DOI: 10.1002/Pssa.200563521  0.391
2006 Klochikhin A, Davydov V, Emtsev V, Sakharov A, Kapitonov V, Andreev B, Lu H, Schaff WJ. Photoluminescence of n-InN with low electron concentrations Physica Status Solidi (a) Applications and Materials Science. 203: 50-58. DOI: 10.1002/Pssa.200563512  0.436
2006 Goldhahn R, Schley P, Winzer AT, Gobsch G, Cimalla V, Ambacher O, Rakel M, Cobet C, Esser N, Lu H, Schaff WJ. Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys Physica Status Solidi (a). 203: 42-49. DOI: 10.1002/Pssa.200563507  0.398
2006 Cimalla V, Niebelschütz M, Ecke G, Lebedev V, Ambacher O, Himmerlich M, Krischok S, Schaefer JA, Lu H, Schaff WJ. Surface band bending at nominally undoped and Mg‐doped InN by Auger Electron Spectroscopy Physica Status Solidi (a). 203: 59-65. DOI: 10.1002/Pssa.200563505  0.425
2005 Liliental-Weber Z, Zakharov DN, Yu KM, Ager JW, Walukiewicz W, Haller EE, Lu H, Schaff WJ. Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies. Journal of Electron Microscopy. 54: 243-50. PMID 16123056 DOI: 10.1093/Jmicro/Dfi033  0.374
2005 Li S, Yu K, Jones R, Wu J, Walukiewicz W, Ager J, Shan W, Haller E, Lu H, Schaff WJ, Kemp W. Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN Mrs Proceedings. 864. DOI: 10.1557/Proc-864-E7.10  0.344
2005 Thakur J, Naik R, Naik VM, Haddad D, Auner G, Lu H, Schaff W. Temperature dependence of transport properties of InN films Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff08-06  0.409
2005 Jones RE, van Genuchten HCM, Li SX, Hsu L, Yu KM, Walukiewicz W, Ager III JW, Haller EE, Lu H, Schaff WJ. Electron Transport Properties of InN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff06-06  0.403
2005 Piper LFJ, Veal TD, Walker M, Mahboob I, McConville CF, Lu H, Schaff WJ. Clean wurtzite InN surfaces prepared with atomic hydrogen Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 23: 617-620. DOI: 10.1116/1.1927108  0.414
2005 Piper LFJ, Veal TD, Jefferson PH, McConville CF, Fuchs F, Furthmüller J, Bechstedt F, Lu H, Schaff WJ. Valence-band structure of InN from x-ray photoemission spectroscopy Physical Review B. 72. DOI: 10.1103/Physrevb.72.245319  0.377
2005 Klochikhin AA, Davydov VY, Emtsev VV, Sakharov AV, Kapitonov VA, Andreev BA, Lu H, Schaff WJ. Acceptor states in the photoluminescence spectra of n-InN Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.195207  0.399
2005 Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Fermi-level stabilization energy in group III nitrides Physical Review B. 71. DOI: 10.1103/Physrevb.71.161201  0.334
2005 Thakur JS, Haddad D, Naik VM, Naik R, Auner GW, Lu H, Schaff WJ. A 1(LO) phonon structure in degenerate InN semiconductor films Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.115203  0.376
2005 Chen F, Cartwright AN, Lu H, Schaff WJ. Hole transport and carrier lifetime in InN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2133892  0.344
2005 Baumann E, Giorgetta FR, Hofstetter D, Lu H, Chen X, Schaff WJ, Eastman LF, Golka S, Schrenk W, Strasser G. Intersubband photoconductivity at 1.6 μm using a strain-compensated AlN/GaN superlattice Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2126130  0.477
2005 Dmowski LH, Plesiewicz JA, Suski T, Lu H, Schaff W, Kurouchi M, Nanishi Y, Konczewicz L, Cimalla V, Ambacher O. Resonant localized donor state above the conduction band minimum in InN Applied Physics Letters. 86: 262105. DOI: 10.1063/1.1977212  0.384
2005 Naik VM, Naik R, Haddad DB, Thakur JS, Auner GW, Lu H, Schaff WJ. Room-temperature photoluminescence and resonance-enhanced Raman scattering in highly degenerate InN films Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1935031  0.467
2005 Tsen KT, Poweleit C, Ferry DK, Lu H, Schaff WJ. Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy Applied Physics Letters. 86: 222103. DOI: 10.1063/1.1931048  0.39
2005 Yu KM, Liliental-Weber Z, Walukiewicz W, Shan W, Ager JW, Li SX, Jones RE, Haller EE, Lu H, Schaff WJ. On the crystalline structure, stoichiometry and band gap of InN thin films Applied Physics Letters. 86: 71910. DOI: 10.1063/1.1861513  0.432
2005 Tsen K, Liang W, Ferry D, Lu H, Schaff WJ, Özgür Ü, Fu Y, Moon Y, Yun F, Morkoç H, Everitt H. Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors Superlattices and Microstructures. 38: 77-114. DOI: 10.1016/J.Spmi.2005.04.004  0.533
2005 Cimalla V, Ecke G, Niebelschütz M, Ambacher O, Goldhahn R, Lu H, Schaff WJ. Surface conductivity of epitaxial InN Physica Status Solidi (C). 2: 2254-2257. DOI: 10.1002/Pssc.200461448  0.395
2005 Veal TD, Piper LFJ, Mahboob I, Lu H, Schaff WJ, McConville CF. Electron accumulation at InN/AlN and InN/GaN interfaces Physica Status Solidi (C). 2: 2246-2249. DOI: 10.1002/Pssc.200461418  0.457
2005 Swartz CH, Tomkins RP, Myers TH, Lu H, Schaff WJ. Demonstration of nearly non-degenerate electron conduction in InN grown by molecular beam epitaxy Physica Status Solidi (C). 2: 2250-2253. DOI: 10.1002/Pssc.200461333  0.413
2005 Liang LW, Tsen K, Poweleit C, Ferry D, Tsen SD, Lu H, Schaff WJ. Non-equilibrium carrier transport in a high-quality InN film grown on GaN Physica Status Solidi (C). 2: 2297-2300. DOI: 10.1002/Pssc.200461319  0.427
2005 Liang W, Tsen KT, Poweleit C, Ferry DK, Tsen SD, Lu H, Schaff WJ. Detection of non-equilibrium longitudinal optical phonons in InN and its consequences Physica Status Solidi (C). 2: 2324-2327. DOI: 10.1002/Pssc.200461309  0.354
2005 Walker M, Veal TD, Lu H, Schaff WJ, McConville CF. InN{0001} polarity by ion scattering spectroscopy Physica Status Solidi (C). 2: 2301-2304. DOI: 10.1002/Pssc.200461290  0.315
2005 Klochikhin AA, Davydov VY, Emtsev VV, Sakharov AV, Kapitonov VA, Andreev BA, Lu H, Schaff WJ. Manifestation of the equilibrium hole distribution in photoluminescence of n-InN Physica Status Solidi (B) Basic Research. 242: R33-R35. DOI: 10.1002/Pssb.200510007  0.439
2005 Chen F, Cartwright AN, Lu H, Schaff WJ. Temperature dependence of carrier lifetimes in InN Physica Status Solidi (a) Applications and Materials Science. 202: 768-772. DOI: 10.1002/Pssa.200461501  0.361
2005 Kuball M, Pomeroy JW, Wintrebert-Fouquet M, Butcher KSA, Lu H, Schaff WJ, Shubina TV, Ivanov SV, Vasson A, Leymarie J. Resonant Raman spectroscopy on InN Physica Status Solidi (a) Applications and Materials Science. 202: 763-767. DOI: 10.1002/Pssa.200461305  0.414
2004 Mahboob I, Veal TD, McConville CF, Lu H, Schaff WJ. Intrinsic electron accumulation at clean InN surfaces. Physical Review Letters. 92: 36804. PMID 14753893 DOI: 10.1103/Physrevlett.92.036804  0.401
2004 Naik VM, Dai H, Naik R, Haddad DB, Thakur JS, Auner GW, Lu H, Schaff WJ. Excitation Wavelength Dependent Raman Scattering in Low and Highly Degenerate InN Films Mrs Proceedings. 831: 149-154. DOI: 10.1557/Proc-831-E3.16  0.334
2004 Liliental-Weber Z, Zakharov DN, Yu KM, Wu J, Li SX, Ager J, Walukiewicz W, Haller E, Lu H, Schaff WJ. Compositional Ordering in InxGa1-xN and its influence on optical properties Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.19  0.42
2004 Veal TD, Mahboob I, Piper LFJ, McConville CF, Lu H, Schaff WJ. Indium nitride: Evidence of electron accumulation Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2175. DOI: 10.1116/1.1771672  0.414
2004 Kasic A, Valcheva E, Monemar B, Lu H, Schaff WJ. InN dielectric function from the midinfrared to the ultraviolet range Physical Review B. 70: 115217. DOI: 10.1103/Physrevb.70.115217  0.417
2004 Mahboob I, Veal TD, Piper LFJ, McConville CF, Lu H, Schaff WJ, Furthmüller J, Bechstedt F. Origin of electron accumulation at wurtzite InN surfaces Physical Review B. 69. DOI: 10.1103/Physrevb.69.201307  0.386
2004 Arnaudov B, Paskova T, Paskov P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff W, Amano H, Akasaki I. Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels Physical Review B. 69: 115216. DOI: 10.1103/Physrevb.69.115216  0.403
2004 Chang YM, Chuang CT, Chia CT, Tsen K, Lu H, Schaff WJ. Coherent longitudinal optical phonon and plasmon coupling in the near-surface region of InN Applied Physics Letters. 85: 5224-5226. DOI: 10.1063/1.1830077  0.354
2004 Lu H, Schaff WJ, Eastman LF. Surface chemical modification of InN for sensor applications Journal of Applied Physics. 96: 3577-3579. DOI: 10.1063/1.1767608  0.502
2004 Ascázubi R, Wilke I, Denniston K, Lu H, Schaff WJ. Terahertz emission by InN Applied Physics Letters. 84: 4810-4812. DOI: 10.1063/1.1759385  0.354
2004 Liang W, Tsen KT, Ferry DK, Lu H, Schaff WJ. Observation of nonequilibrium longitudinal optical phonons in InN and its implications Applied Physics Letters. 84: 3849-3851. DOI: 10.1063/1.1748838  0.377
2004 Liang W, Tsen KT, Ferry DK, Lu H, Schaff WJ. Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN Applied Physics Letters. 84: 3681-3683. DOI: 10.1063/1.1739509  0.412
2004 Wu J, Walukiewicz W, Li SX, Armitage R, Ho JC, Weber ER, Haller EE, Lu H, Schaff WJ, Barcz A, Jakiela R. Effects of electron concentration on the optical absorption edge of InN Applied Physics Letters. 84: 2805-2807. DOI: 10.1063/1.1704853  0.401
2004 Oila J, Kemppinen A, Laakso A, Saarinen K, Egger W, Liszkay L, Sperr P, Lu H, Schaff WJ. Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy Applied Physics Letters. 84: 1486-1488. DOI: 10.1063/1.1651327  0.402
2004 Krischok S, Yanev V, Balykov O, Himmerlich M, Schaefer JA, Kosiba R, Ecke G, Cimalla I, Cimalla V, Ambacher O, Lu H, Schaff WJ, Eastman LF. Investigations of MBE grown InN and the influence of sputtering on the surface composition Surface Science. 566: 849-855. DOI: 10.1016/J.Susc.2004.06.020  0.534
2004 Cimalla V, Kaiser U, Cimalla I, Ecke G, Pezoldt J, Spiess L, Ambacher O, Lu H, Schaff W. Cubic InN on -plane sapphire Superlattices and Microstructures. 36: 487-495. DOI: 10.1016/J.Spmi.2004.09.054  0.405
2004 Goldhahn R, Winzer AT, Cimalla V, Ambacher O, Cobet C, Richter W, Esser N, Furthmüller J, Bechstedt F, Lu H, Schaff WJ. Anisotropy of the dielectric function for wurtzite InN Superlattices and Microstructures. 36: 591-597. DOI: 10.1016/J.Spmi.2004.09.016  0.41
2004 Darakchieva V, Paskov P, Valcheva E, Paskova T, Schubert M, Bundesmann C, Lu H, Schaff W, Monemar B. Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties Superlattices and Microstructures. 36: 573-580. DOI: 10.1016/J.Spmi.2004.09.014  0.321
2004 Arnaudov B, Paskova T, Paskov P, Magnusson B, Valcheva E, Monemar B, Lu H, Schaff WJ, Amano H, Akasaki I. Free-to-bound radiative recombination in highly conducting InN epitaxial layers Superlattices and Microstructures. 36: 563-571. DOI: 10.1016/J.Spmi.2004.09.013  0.415
2004 Chen F, Cartwright AN, Lu H, Schaff WJ. Temperature-dependent optical properties of wurtzite InN Physica E: Low-Dimensional Systems and Nanostructures. 20: 308-312. DOI: 10.1016/J.Physe.2003.08.024  0.416
2004 Walukiewicz W, Li S, Wu J, Yu K, Ager J, Haller E, Lu H, Schaff WJ. Optical properties and electronic structure of InN and In-rich group III-nitride alloys Journal of Crystal Growth. 269: 119-127. DOI: 10.1016/J.Jcrysgro.2004.05.041  0.432
2004 Kuball M, Pomeroy JW, Wintrebert-Fouquet M, Butcher KSA, Lu H, Schaff WJ. A Raman spectroscopy study of InN Journal of Crystal Growth. 269: 59-65. DOI: 10.1016/J.Jcrysgro.2004.05.034  0.417
2004 Laakso A, Oila J, Kemppinen A, Saarinen K, Egger W, Liszkay L, Sperr P, Lu H, Schaff W. Vacancy defects in epitaxial InN: identification and electrical properties Journal of Crystal Growth. 269: 41-49. DOI: 10.1016/J.Jcrysgro.2004.05.032  0.439
2004 Swartz CH, Tompkins RP, Giles NC, Myers TH, Lu H, Schaff WJ, Eastman LF. Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements Journal of Crystal Growth. 269: 29-34. DOI: 10.1016/J.Jcrysgro.2004.05.030  0.505
2004 Chen F, Cartwright AN, Lu H, Schaff WJ. Ultrafast carrier dynamics in InN epilayers Journal of Crystal Growth. 269: 10-14. DOI: 10.1016/J.Jcrysgro.2004.05.028  0.418
2004 Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys Physica Status Solidi (B). 241: 3107-3112. DOI: 10.1002/Pssb.200405232  0.346
2003 Haddad DB, Dai H, Naik R, Morgan C, Naik VM, Thakur JS, Auner GW, Wenger LE, Lu H, Schaff WJ. Optical and Electrical Properties of Low to Highly-Degenerate InN Films Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y12.7  0.404
2003 Lu H, Schaff WJ, Eastman LF, Cimalla V, Pezoldt J, Ambacher O, Wu J, Walukiewicz W. Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy Materials Research Society Symposium - Proceedings. 798: 213-218. DOI: 10.1557/Proc-798-Y12.6  0.53
2003 Chen F, Cartwright AN, Lu H, Schaff WJ. Time-resolved spectroscopy of recombination and relaxation dynamics in InN Applied Physics Letters. 83: 4984-4986. DOI: 10.1063/1.1633973  0.315
2003 Cimalla V, Pezoldt J, Ecke G, Kosiba R, Ambacher O, Spieß L, Teichert G, Lu H, Schaff WJ. Growth of cubic InN on r-plane sapphire Applied Physics Letters. 83: 3468-3470. DOI: 10.1063/1.1622985  0.326
2003 Lu CJ, Bendersky LA, Lu H, Schaff WJ. Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer Applied Physics Letters. 83: 2817-2819. DOI: 10.1063/1.1616659  0.422
2003 Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Li SX, Haller EE, Lu H, Schaff WJ. Temperature dependence of the fundamental band gap of InN Journal of Applied Physics. 94: 4457-4460. DOI: 10.1063/1.1605815  0.441
2003 Lu H, Schaff WJ, Eastman LF, Wu J, Walukiewicz W, Cimalla V, Ambacher O. Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy Applied Physics Letters. 83: 1136-1138. DOI: 10.1063/1.1599634  0.572
2003 Rickert KA, Ellis AB, Himpsel FJ, Lu H, Schaff W, Redwing JM, Dwikusuma F, Kuech TF. X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN Applied Physics Letters. 82: 3254-3256. DOI: 10.1063/1.1573351  0.394
2003 Lu H, Schaff WJ, Eastman LF, Stutz CE. Surface charge accumulation of InN films grown by molecular-beam epitaxy Applied Physics Letters. 82: 1736-1738. DOI: 10.1063/1.1562340  0.54
2003 Mkhoyan KA, Silcox J, Alldredge ES, Ashcroft NW, Lu H, Schaff WJ, Eastman LF. Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy Applied Physics Letters. 82: 1407-1409. DOI: 10.1063/1.1559660  0.537
2003 Wu J, Walukiewicz W, Yu K, Ager J, Li S, Haller E, Lu H, Schaff WJ. Universal bandgap bowing in group-III nitride alloys Solid State Communications. 127: 411-414. DOI: 10.1016/S0038-1098(03)00457-5  0.32
2003 Cimalla V, Förster C, Kittler G, Cimalla I, Kosiba R, Ecke G, Ambacher O, Goldhahn R, Shokhovets S, Georgakilas A, Lu H, Schaff W. Correlation between strain, optical and electrical properties of InN grown by MBE Physica Status Solidi (C). 2818-2821. DOI: 10.1002/Pssc.200303419  0.401
2003 Wu J, Walukiewicz W, Yu KM, Ager III JW, Haller EE, Lu H, Schaff WJ. Narrow bandgap group III-nitride alloys Physica Status Solidi (B). 240: 412-416. DOI: 10.1002/Pssb.200303475  0.374
2002 Goldhahn R, Shokhovets S, Cimalla V, Spiess L, Ecke G, Ambacher O, Furthmüller J, Bechstedt F, Lu H, Schaff WJ. Dielectric Function of “Narrow” Band Gap InN Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L5.9  0.421
2002 Lu H, Schaff WJ, Eastman LF, Wu J, Walukiewicz W, Look DC, Molnar RJ. Growth of Thick InN by Molecular Beam Epitaxy Mrs Proceedings. 743. DOI: 10.1557/PROC-743-L4.10  0.523
2002 Lu H, Schaff WJ, Eastman LF, Wu J, Walukiewicz W, Look DC, Molnar RJ. Growth of thick InN by molecular beam epitaxy Materials Research Society Symposium - Proceedings. 743: 317-322. DOI: 10.1557/Proc-743-L4.10  0.578
2002 Lu H, Schaff WJ, Eastman LF, Wood C. Study of interface properties of InN and InN-based heterostructures by molecular beam epitaxy Materials Research Society Symposium - Proceedings. 693: 9-14. DOI: 10.1557/Proc-693-I1.5.1  0.601
2002 Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Effects of the narrow band gap on the properties of InN Physical Review B. 66. DOI: 10.1103/Physrevb.66.201403  0.419
2002 Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Small band gap bowing in In1-xGaxN alloys Applied Physics Letters. 80: 4741-4743. DOI: 10.1063/1.1489481  0.399
2002 Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Unusual properties of the fundamental band gap of InN Applied Physics Letters. 80: 3967-3969. DOI: 10.1063/1.1482786  0.415
2001 Lu H, Schaff WJ, Hwang J, Eastman LF. Preparation of InN and InN-Based Heterostructures by Molecular Beam Epitaxy Mrs Proceedings. 680. DOI: 10.1557/PROC-680-E3.2  0.549
2001 Lu H, Schaff WJ, Hwang J, Eastman LF. Preparation of InN and InN-based heterostructures by molecular beam epitaxy Materials Research Society Symposium Proceedings. 680: 37-42. DOI: 10.1557/Proc-680-E3.2  0.591
2001 Lu H, Schaff WJ, Hwang J, Wu H, Koley G, Eastman LF. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy Applied Physics Letters. 79: 1489-1491. DOI: 10.1063/1.1402649  0.705
2000 Lu H, Schaff WJ, Hwang J, Wu H, Yeo W, Pharkya A, Eastman LF. Improvement on epitaxial grown of InN by migration enhanced epitaxy Applied Physics Letters. 77: 2548-2550. DOI: 10.1063/1.1318235  0.442
2000 Lu H, Schaff WJ, Hwang J, Wu H, Yeo W, Pharkya A, Eastman LF. Improvement on epitaxial grown of InN by migration enhanced epitaxy Applied Physics Letters. 77: 2548-2550. DOI: 10.1063/1.1318235  0.712
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