| Year |
Citation |
Score |
| 2013 |
Qi J, Huang J, Paul D, Ren J, Chu S, Liu J. Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires. Nanoscale. 5: 2651-4. PMID 23456175 DOI: 10.1039/C3Nr00027C |
0.535 |
|
| 2013 |
Ren J, Yan D, Chu S, Liu J. Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using single triangular-shaped Si nanowire channel Applied Physics a: Materials Science and Processing. 111: 719-724. DOI: 10.1007/S00339-013-7641-3 |
0.647 |
|
| 2012 |
Qi J, Olmedo M, Ren J, Zhan N, Zhao J, Zheng JG, Liu J. Resistive switching in single epitaxial ZnO nanoislands. Acs Nano. 6: 1051-8. PMID 22257020 DOI: 10.1021/Nn204809A |
0.755 |
|
| 2012 |
Ren J, Li B, Zheng JG, Olmedo M, Zhou H, Shi Y, Liu J. Nonplanar NiSi nanocrystal floating-gate memory based on a triangular-shaped Si nanowire array for extending nanocrystal memory scaling limit Ieee Electron Device Letters. 33: 1390-1392. DOI: 10.1109/Led.2012.2206554 |
0.735 |
|
| 2012 |
Ren J, Hu H, Liu F, Chu S, Liu J. Strain-less directed self-assembly of Si nanocrystals on patterned SiO 2 substrate Journal of Applied Physics. 112. DOI: 10.1063/1.4749269 |
0.518 |
|
| 2012 |
Chu S, Ren J, Yan D, Huang J, Liu J. Noble metal nanodisks epitaxially formed on ZnO nanorods and their effect on photoluminescence Applied Physics Letters. 101. DOI: 10.1063/1.4739516 |
0.504 |
|
| 2012 |
Ren J, Li B, Zheng JG, Liu J. High-density NiSi nanocrystals embedded in Al 2O 3/SiO 2 double-barrier for robust retention of nonvolatile memory Solid-State Electronics. 67: 23-26. DOI: 10.1016/J.Sse.2011.07.016 |
0.578 |
|
| 2012 |
Kong J, Chu S, Zuo Z, Ren J, Olmedo M, Liu J. Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure Applied Physics a: Materials Science and Processing. 107: 971-975. DOI: 10.1007/S00339-012-6850-5 |
0.717 |
|
| 2012 |
Qi J, Ren J, Olmedo M, Zhan N, Liu J. Unipolar resistive switching in Au/Cr/Mg 0.84Zn 0.16O 2.δ/p +-Si Applied Physics a: Materials Science and Processing. 107: 891-897. DOI: 10.1007/S00339-012-6815-8 |
0.767 |
|
| 2012 |
Liu J, Chu S, Wang G, Zhao J, Kong J, Li L, Ren J. Electrically pumped UV nanowire lasers 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.599 |
|
| 2011 |
Olmedo M, Wang C, Ryu K, Zhou H, Ren J, Zhan N, Zhou C, Liu J. Carbon nanotube memory by the self-assembly of silicon nanocrystals as charge storage nodes. Acs Nano. 5: 7972-7. PMID 21902187 DOI: 10.1021/Nn202377F |
0.724 |
|
| 2011 |
Chu S, Wang G, Zhou W, Lin Y, Chernyak L, Zhao J, Kong J, Li L, Ren J, Liu J. Electrically pumped waveguide lasing from ZnO nanowires. Nature Nanotechnology. 6: 506-10. PMID 21725304 DOI: 10.1038/Nnano.2011.97 |
0.69 |
|
| 2011 |
Qi J, Zhang Q, Huang J, Ren J, Olmedo M, Liu J. Write-once-read-many-times memory based on ZnO on p-Si for long-time archival storage Ieee Electron Device Letters. 32: 1445-1447. DOI: 10.1109/Led.2011.2162219 |
0.772 |
|
| 2011 |
Zhao J, Liang H, Sun J, Feng Q, Li S, Bian J, Hu L, Du G, Ren J, Liu J. Influence of Sb doping on optical and structural properties of ZnO by MOCVD Physica Status Solidi (a) Applications and Materials Science. 208: 825-828. DOI: 10.1002/Pssa.201026659 |
0.331 |
|
| 2010 |
Yang Z, Chu S, Chen WV, Li L, Kong J, Ren J, Yu PKL, Liu J. ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy Applied Physics Express. 3. DOI: 10.1143/Apex.3.032101 |
0.659 |
|
| 2010 |
Li B, Ren J, Liu J. Synthesis of high-density PtSi nanocrystals for memory application Applied Physics Letters. 96. DOI: 10.1063/1.3421546 |
0.565 |
|
| 2009 |
Li B, Ren J, Liu J. Pt-induced high density PtSi nanocrystals and their application in nonvolatile memory 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378312 |
0.477 |
|
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