Year |
Citation |
Score |
2019 |
Kumar P, Dalal V, Sharma N, Kokane S, Ghosh DK, Kumar P, Sharma AK. Characterization of the heavy metal binding properties of periplasmic metal uptake protein CLas-ZnuA2. Metallomics : Integrated Biometal Science. PMID 31853532 DOI: 10.1039/C9Mt00200F |
0.389 |
|
2019 |
Bagheri B, Kottokkaran R, Poly L, Reichert B, Sharikadze S, Noack M, Dalal V. Influence of post-deposition selenization and cadmium chloride assisted grain enhancement on electronic properties of cadmium selenide thin films Aip Advances. 9: 125012. DOI: 10.1063/1.5124881 |
0.442 |
|
2019 |
Kottokkaran R, Gaonkar HA, Abbas HA, Noack M, Dalal V. Performance and stability of co-evaporated vapor deposited perovskite solar cells Journal of Materials Science: Materials in Electronics. 30: 5487-5494. DOI: 10.1007/S10854-019-00842-Y |
0.402 |
|
2018 |
Saini G, Sharma N, Dalal V, Warghane A, Ghosh DK, Kumar P, Sharma AK. The analysis of subtle internal communications through mutation studies in periplasmic metal uptake protein CLas-ZnuA2. Journal of Structural Biology. PMID 30125692 DOI: 10.1016/J.Jsb.2018.08.013 |
0.39 |
|
2018 |
Kottokkaran R, Gaonkar HA, Bagheri B, Dalal VL. Efficient p-i-n inorganic CsPbI3 perovskite solar cell deposited using layer-by-layer vacuum deposition Journal of Vacuum Science and Technology. 36: 41201. DOI: 10.1116/1.5029253 |
0.427 |
|
2018 |
Bhattacharya J, Biswas R, Dalal VL. Surface States and Interface States: Two Fundamental Sources of Photodegradation in Organic Bulk Heterojunction Devices Ieee Journal of Photovoltaics. 8: 1647-1655. DOI: 10.1109/Jphotov.2018.2863542 |
0.562 |
|
2018 |
Bhattacharya J, Peer A, Joshi PH, Biswas R, Dalal VL. Blue photon management by inhouse grown ZnO:Al cathode for enhanced photostability in polymer solar cells Solar Energy Materials and Solar Cells. 179: 95-101. DOI: 10.1016/J.Solmat.2018.02.011 |
0.611 |
|
2017 |
Shah S, Biswas R, Koschny T, Dalal V. Unusual infrared absorption increases in photo-degraded organic films. Nanoscale. PMID 28613318 DOI: 10.1039/C7Nr01132F |
0.375 |
|
2017 |
Singh R, Kottokkaran R, Dalal VL, Balasubramanian G. Engineering band gap and electronic transport in organic-inorganic halide perovskites by superlattices. Nanoscale. PMID 28534909 DOI: 10.1039/C7Nr00459A |
0.332 |
|
2017 |
Bhattacharya J, Joshi PH, Biswas R, Dalal VL. Pathway for recovery of photo-degraded polymer solar cells by post degradation thermal anneal Solar Energy Materials and Solar Cells. 164: 70-79. DOI: 10.1016/J.Solmat.2017.02.012 |
0.59 |
|
2016 |
Joshi PH, Zhang L, Hossain IM, Abbas HA, Kottokkaran R, Nehra SP, Dhaka M, Noack M, Dalal VL. The physics of photon induced degradation of perovskite solar cells Aip Advances. 6: 115114. DOI: 10.1063/1.4967817 |
0.374 |
|
2016 |
Maynard B, Long Q, Schiff EA, Yang M, Zhu K, Kottokkaran R, Abbas H, Dalal VL. Electron and hole drift mobility measurements on methylammonium lead iodide perovskite solar cells Applied Physics Letters. 108. DOI: 10.1063/1.4948344 |
0.317 |
|
2015 |
Balaji G, Joshi PH, Abbas HA, Zhang L, Kottokkaran R, Samiee M, Noack M, Dalal VL. CH3NH3PbI3 from non-iodide lead salts for perovskite solar cells via the formation of PbI2. Physical Chemistry Chemical Physics : Pccp. 17: 10369-72. PMID 25824113 DOI: 10.1039/C5Cp00073D |
0.306 |
|
2015 |
Kottokkaran R, Abbas H, Balaji G, Zhang L, Samiee M, Kitahara A, Noack M, Dalal V. Highly reproducible vapor deposition technique, device physics and structural instability of perovskite solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355612 |
0.32 |
|
2015 |
Abbas HA, Kottokkaran R, Ganapathy B, Samiee M, Zhang L, Kitahara A, Noack M, Dalal VL. High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer Apl Materials. 3. DOI: 10.1063/1.4905932 |
0.789 |
|
2014 |
Konduri S, Mulder W, Dalal VL. Defects and doping in nanocrystalline silicon-germanium devices Materials Research Society Symposium Proceedings. 1666. DOI: 10.1557/Opl.2014.797 |
0.486 |
|
2014 |
Samiee M, Konduri S, Ganapathy B, Kottokkaran R, Abbas HA, Kitahara A, Joshi P, Zhang L, Noack M, Dalal V. Defect density and dielectric constant in perovskite solar cells Applied Physics Letters. 105. DOI: 10.1063/1.4897329 |
0.76 |
|
2014 |
Samiee M, Joshi P, Aidarkhanov D, Dalal V. Measurement of defect densities and Urbach energies of tail states in PTB7 solar cells Applied Physics Letters. 105. DOI: 10.1063/1.4896782 |
0.408 |
|
2014 |
Samiee M, Modtland B, Aidarkhanov D, Dalal VL. More stable hybrid organic solar cells deposited on amorphous Si electron transfer layer Applied Physics Letters. 104. DOI: 10.1063/1.4878405 |
0.467 |
|
2014 |
Pattnaik S, Chakravarty N, Biswas R, Dalal V, Slafer D. Nano-photonic and nano-plasmonic enhancements in thin film silicon solar cells Solar Energy Materials and Solar Cells. 129: 115-123. DOI: 10.1016/J.Solmat.2014.05.010 |
0.775 |
|
2013 |
Mahadevapuram RC, Dalal VL, Chaudhary S. Effect of a-Si:H–polymer interface on the behavior of hybrid solar cells Nanomaterials and Energy. 2: 186-193. DOI: 10.1680/Nme.13.00014 |
0.43 |
|
2013 |
Kajjam S, Konduri S, Noack M, Shamshimov G, Ussembayev N, Dalal V. Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si Materials Research Society Symposium Proceedings. 1536: 169-173. DOI: 10.1557/Opl.2013.786 |
0.793 |
|
2013 |
Biswas R, Pattnaik S, Xu C, Bhattacharya J, Chakravarty N, Dalal V. Enhancement of solar cells with photonic and plasmonic crystals - Overcoming the Lambertian limit Journal of Materials Research. 28: 1021-1030. DOI: 10.1557/Jmr.2013.41 |
0.799 |
|
2013 |
Li Z, Dalal VL. Influence of chemical annealing on electronic properties of a-(Si, Ge) Conference Record of the Ieee Photovoltaic Specialists Conference. 546-549. DOI: 10.1109/PVSC.2013.6744210 |
0.437 |
|
2013 |
Pattnaik S, Xiao T, Shinar R, Shinar J, Dalal VL. Novel hybrid amorphous/organic tandem junction solar cell Ieee Journal of Photovoltaics. 3: 295-299. DOI: 10.1109/JPHOTOV.2012.2212700 |
0.561 |
|
2013 |
Kajjam S, Konduri S, Dalal VL. Influence of oxygen contamination on minority carrier lifetime and defect density in nanocrystalline Si Applied Physics Letters. 103. DOI: 10.1063/1.4819204 |
0.787 |
|
2013 |
Balaji G, Esfahani MS, Joshi P, Bhattacharaya J, Jeffries-El M, Dalal V. Synthesis and photovoltaic properties of a furan-diketopyrrolopyrrole- fluorene terpolymer European Polymer Journal. 49: 3921-3928. DOI: 10.1016/J.Eurpolymj.2013.08.021 |
0.313 |
|
2012 |
Pattnaik S, Chakravarty N, Biswas R, Slafer D, Dalal V. Light-trapping in thin film silicon solar cells with a combination of periodic and randomly textured back-reflectors Materials Research Society Symposium Proceedings. 1426: 117-123. DOI: 10.1557/Opl.2012.888 |
0.726 |
|
2012 |
Konduri S, Noack M, Dalal V. Grain growth and mobility in nanocrystalline Ge films Materials Research Society Symposium Proceedings. 1426: 359-364. DOI: 10.1557/Opl.2012.1272 |
0.46 |
|
2012 |
Biswas R, Xu C, Pattnaik S, Bhattacharya J, Chakravarty N, Dalal V. Photonic and plasmonic crystal based enhancement of solar cells- overcoming the Lambertian classical 4n2 limit Materials Research Society Symposium Proceedings. 1426: 137-147. DOI: 10.1557/Opl.2012.1097 |
0.801 |
|
2012 |
Pattnaik S, Chakravarty N, Bhattacharya J, Biswas R, Slafer D, Dalal VL. Thin film Si photovoltaic devices on photonic structures fabricated on steel and polymer substrates Materials Research Society Symposium Proceedings. 1321: 99-104. DOI: 10.1557/Opl.2011.943 |
0.798 |
|
2012 |
Shyam A, Congreve D, Noack M, Dalal V. Properties of A-(Si,Ge) materials and devices grown using chemical annealing Materials Research Society Symposium Proceedings. 1321: 229-234. DOI: 10.1557/Opl.2011.1094 |
0.707 |
|
2012 |
Dalal VL, Mayer R, Bhattacharya J, Samiee M. Stability of organic solar cells Ieee International Reliability Physics Symposium Proceedings. 4A.5.1-4A.5.4. DOI: 10.1109/IRPS.2012.6241829 |
0.516 |
|
2012 |
Bhattacharya J, Mayer RW, Samiee M, Dalal VL. Photo-induced changes in fundamental properties of organic solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4711806 |
0.591 |
|
2012 |
Congreve D, Kajjam S, Chakravarty N, Dalal V. Influence of oxygen on defect densities in nanocrystalline Si Journal of Non-Crystalline Solids. 358: 2071-2073. DOI: 10.1016/J.Jnoncrysol.2012.01.049 |
0.805 |
|
2012 |
Bhattacharya J, Chakravarty N, Pattnaik S, Slafer WD, Biswas R, Dalal V. Comparison of optical properties of periodic photonic-plasmonic and randomly textured back reflectors for nc-Si solar cells Journal of Non-Crystalline Solids. 358: 2313-2318. DOI: 10.1016/J.Jnoncrysol.2011.12.108 |
0.784 |
|
2011 |
Chakravarty N, Pattnaik S, Biswas R, Bhattacharya J, Slafer D, Dalal VL. Superlattice solar cells on nanoimprinted photo-plasmon substrates Conference Record of the Ieee Photovoltaic Specialists Conference. 000799-000801. DOI: 10.1109/PVSC.2011.6186075 |
0.737 |
|
2011 |
Dalal VL, Li Z. Physics of instability of thin film Si and (Si,Ge) alloy solar cells Ieee International Reliability Physics Symposium Proceedings. 5E.2.1-5E.2.5. DOI: 10.1109/IRPS.2011.5784533 |
0.37 |
|
2011 |
Bhattacharya J, Chakravarty N, Pattnaik S, Dennis Slafer W, Biswas R, Dalal VL. A photonic-plasmonic structure for enhancing light absorption in thin film solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3641469 |
0.781 |
|
2010 |
Curtin B, Biswas R, Dalal V. Enhanced Absorption in Amorphous Silicon Solar Cells Using Plasmonic and Photonic Crystals – Measurement and Simulation Mrs Proceedings. 1248. DOI: 10.1557/Proc-1248-D05-03 |
0.382 |
|
2010 |
Curtin B, Biswas R, Dalal V. Photonic Crystal Back Reflectors for Enhanced Absorption in Amorphous Silicon Solar Cells Mrs Proceedings. 1245. DOI: 10.1557/Proc-1245-A07-21 |
0.376 |
|
2010 |
Dalal V, Shyam A, Congreve D, Noack M. High Quality, Low Bandgap a-Si Films and Devices Produced Using Chemical Annealing Mrs Proceedings. 1245. DOI: 10.1557/Proc-1245-A04-03 |
0.671 |
|
2010 |
Pattnaik S, Biswas R, Dalal VL, Slafer D, Ji J. Amorphous silicon solar cells on plastic based photonic structures Conference Record of the Ieee Photovoltaic Specialists Conference. 1483-1486. DOI: 10.1109/PVSC.2010.5614348 |
0.612 |
|
2010 |
Biswas R, Bhattacharya J, Lewis B, Chakravarty N, Dalal V. Enhanced nanocrystalline silicon solar cell with a photonic crystal back-reflector Solar Energy Materials and Solar Cells. 94: 2337-2342. DOI: 10.1016/J.Solmat.2010.08.007 |
0.716 |
|
2009 |
Dalal VL. Nanocrystalline Superlattice Solar Cell Mrs Proceedings. 1153. DOI: 10.1557/Proc-1153-A10-06 |
0.319 |
|
2009 |
Curtin B, Biswas R, Dalal V. Fabrication of Photonic Crystal based Back Reflectors for Light Management and Enhanced Absorption in Amorphous Silicon Solar Cells Mrs Proceedings. 1153. DOI: 10.1557/Proc-1153-A07-15 |
0.412 |
|
2009 |
Biswas R, Zhou D, Curtin B, Chakravarty N, Dalal V. Surface plasmon enhancement of optical absorption of thin film A-SI:H solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 000557-000560. DOI: 10.1109/PVSC.2009.5411623 |
0.638 |
|
2009 |
Dalal V, Madhavan A, Saripalli S, Chakravarty N, Noack M. Device physics of nanocrystalline silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 001667-001671. DOI: 10.1109/PVSC.2009.5411412 |
0.796 |
|
2009 |
Curtin B, Biswas R, Dalal V. Photonic crystal based back reflectors for light management and enhanced absorption in amorphous silicon solar cells Applied Physics Letters. 95. DOI: 10.1063/1.3269593 |
0.439 |
|
2009 |
Madhavan A, Chakravarty N, Dalal VL. Nanocrystalline silicon superlattice solar cells Materials Research Society Symposium Proceedings. 1153: 213-218. |
0.728 |
|
2008 |
Saripalli S, Dalal V. Macrocrystalline silicon-germanium solar cells fabricated using VHF PECVD 2008 Ieee International Conference On Electro/Information Technology, Ieee Eit 2008 Conference. 414-418. DOI: 10.1109/EIT.2008.4554338 |
0.73 |
|
2008 |
Madhavan A, Dalal VL, Noack MA. Superlattice structures for nanocrystalline silicon solar cells 2008 Ieee International Conference On Electro/Information Technology, Ieee Eit 2008 Conference. 383-388. DOI: 10.1109/EIT.2008.4554333 |
0.609 |
|
2008 |
Jariwala C, Chainani AA, Eguchi R, Matsunami M, Shin S, Bhatt S, Dalal V, John PI. Low power density multihole cathode very-high-frequency plasma for mixed phase Si:H thin films Applied Physics Letters. 93: 191502. DOI: 10.1063/1.3023066 |
0.442 |
|
2008 |
Jaju V, Dalal V. Growth and properties of fluorinated plasma oxide for Si MOSFET devices Journal of Non-Crystalline Solids. 354: 2839-2842. DOI: 10.1016/J.Jnoncrysol.2007.10.103 |
0.807 |
|
2008 |
Saripalli S, Sharma P, Reusswig P, Dalal V. Transport properties of nanocrystalline silicon and silicon-germanium Journal of Non-Crystalline Solids. 354: 2426-2429. DOI: 10.1016/J.Jnoncrysol.2007.10.060 |
0.778 |
|
2008 |
Dalal VL, Madhavan A. Alternative designs for nanocrystalline silicon solar cells Journal of Non-Crystalline Solids. 354: 2403-2406. DOI: 10.1016/J.Jnoncrysol.2007.09.110 |
0.691 |
|
2008 |
Ghosh D, Shinar R, Dalal V, Zhou Z, Shinar J. Amorphous and nanocrystalline p-i-n Si and Si,Ge photodetectors for structurally integrated O2 sensors Journal of Non-Crystalline Solids. 354: 2606-2609. DOI: 10.1016/J.Jnoncrysol.2007.09.065 |
0.563 |
|
2007 |
Muthukrishnan K, Dalal V, Noack M. Growth and Electronic Properties in Hot Wire Deposited Nanocrystalline Si Solar Cells Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A21-06 |
0.774 |
|
2007 |
Madhavan A, Ghosh D, Noack M, Dalal V. Influence of Amorphous Layers on Performance of Nanocrystalline/Amorphous Superlattice Si Solar Cells Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A18-02 |
0.716 |
|
2007 |
Ghosh D, Shinar R, Dalal VL, Zhou Z, Shinar J. PECVD grown p-i-n Si and Si,Ge thin film photodetectors for integrated oxygen sensors Materials Research Society Symposium Proceedings. 989: 269-274. DOI: 10.1557/Proc-0989-A12-01 |
0.539 |
|
2007 |
Jaju V, Dalal V. Channel Reliability in MOSFETs with Gate Oxide Grown using ECR Plasma of O2/He Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A05-09 |
0.774 |
|
2007 |
Dalal VL, Muthukrishnan K, Saripalli S, Stieler D, Noack M. Growth and electronic properties of nanocrystalline Si Materials Research Society Symposium Proceedings. 910: 293-302. DOI: 10.1557/Proc-0910-A13-01 |
0.827 |
|
2007 |
Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. Thin films of GeC deposited using a unique hollow cathode sputtering technique Materials Research Society Symposium Proceedings. 910: 163-168. DOI: 10.1557/Proc-0910-A07-03 |
0.475 |
|
2007 |
Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. The properties of Ge-C thin films deposited using dual hollow cathodes Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 1: 114-117. DOI: 10.1109/WCPEC.2006.279377 |
0.423 |
|
2006 |
Panda D, Noack M, Dalal V. P Channel Mosfet Devices in Nanocrystalline Silicon Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A22-07 |
0.814 |
|
2006 |
Panda DP, Dalal V. Influence of Annealing on Crystallinity and Conductivity of p-type Nanocrystalline Si films Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A08-03 |
0.821 |
|
2006 |
Stieler D, Dalal VL, Muthukrishnan K, Noack M, Schares E. Electron mobility in nanocrystalline silicon devices Journal of Applied Physics. 100. DOI: 10.1063/1.2234545 |
0.774 |
|
2006 |
Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Thompson DW, Dalal VL. Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering technique Materials Science in Semiconductor Processing. 9: 759-763. DOI: 10.1016/J.Mssp.2006.08.026 |
0.528 |
|
2006 |
Wang N, Dalal VL. Improving stability of amorphous silicon using chemical annealing with helium Journal of Non-Crystalline Solids. 352: 1937-1940. DOI: 10.1016/J.Jnoncrysol.2006.02.033 |
0.669 |
|
2006 |
Dalal VL, Muthukrishnan K, Niu X, Stieler D. Growth chemistry of nanocrystalline silicon and germanium films Journal of Non-Crystalline Solids. 352: 892-895. DOI: 10.1016/J.Jnoncrysol.2006.01.081 |
0.804 |
|
2006 |
Shinar R, Ghosh D, Choudhury B, Noack M, Dalal VL, Shinar J. Luminescence-based oxygen sensor structurally integrated with an organic light-emitting device excitation source and an amorphous Si-based photodetector Journal of Non-Crystalline Solids. 352: 1995-1998. DOI: 10.1016/J.Jnoncrysol.2005.12.029 |
0.674 |
|
2005 |
Wang N, Dalal VL. Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with Helium Mrs Proceedings. 862. DOI: 10.1557/PROC-862-A20.6 |
0.654 |
|
2005 |
Niu X, Booher J, Dalal VL. Nanocrystalline germanium and germanium carbide films and devices Materials Research Society Symposium Proceedings. 862: 151-156. DOI: 10.1557/Proc-862-A10.2 |
0.679 |
|
2005 |
Niu X, Dalal VL. Growth and properties of nanocrystalline germanium films Journal of Applied Physics. 98. DOI: 10.1063/1.2127125 |
0.631 |
|
2005 |
Dalal VL, Sharma P. Defect density and diffusion length of holes in nanocrystalline silicon devices Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1873062 |
0.493 |
|
2005 |
Boshta M, Alavi B, Braunstein R, Bärner K, Dalal VL. Electronic transport properties of the μc-(Si,Ge) alloys prepared by ECR Solar Energy Materials and Solar Cells. 87: 387-393. DOI: 10.1016/J.Solmat.2004.07.032 |
0.507 |
|
2005 |
Dalal VL, Muthukrishnan K, Stieler D, Noack M. Growth chemistry of nanocrystalline si:h films Materials Research Society Symposium Proceedings. 862: 69-74. |
0.745 |
|
2005 |
Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. Polycrystalline GeC thin films deposited using a unique hollow cathode sputtering technique Materials Research Society Symposium Proceedings. 862: 195-200. |
0.375 |
|
2005 |
Dalal VL, Leib J, Muthukrishnan K, Stieler D, Noack M. Material properties and growth chemistry of nancorystalline silicon films used for photovoltaic devices Conference Record of the Ieee Photovoltaic Specialists Conference. 1448-1451. |
0.773 |
|
2005 |
Wang N, Dalal VL. Nanocrystalline Si films and devices produced using chemical annealing with helium Materials Research Society Symposium Proceedings. 862: 75-80. |
0.44 |
|
2005 |
Niu X, Booher J, Dalal VL. Growth and properties of nanocrystalline germanium and germanium-carbide films and devices Conference Record of the Ieee Photovoltaic Specialists Conference. 1508-1511. |
0.397 |
|
2004 |
McDonald J, Dalal VL, Noack M. Development of Top-Gate Nanocrystalline Si:H Thin Film Transistors Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A9.37 |
0.47 |
|
2004 |
Dalal VL, Sharma P, Staab D, Noack M, Han K. Defect densities, diffusion lengths and device physics in nanocrystalline Si:H solar cells Materials Research Society Symposium Proceedings. 808: 569-574. DOI: 10.1557/Proc-808-A8.2 |
0.668 |
|
2004 |
Dalal VL, Graves J, Leib J. Influence of pressure and ion bombardment on the growth and properties of nanocrystalline silicon materials Applied Physics Letters. 85: 1413-1414. DOI: 10.1063/1.1784550 |
0.447 |
|
2004 |
Boshta M, Bärner K, Braunstein R, Alavi B, Dalal V. Determination of the trap state density differences in hydrogenated microcrystalline silicon - Germanium (Si:Ge:H) alloys Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 112: 69-72. DOI: 10.1016/J.Mseb.2004.06.009 |
0.406 |
|
2004 |
Zhu J, Dalal VL, Ring MA, Gutierrez JJ, Cohen JD. Growth and properties of amorphous Ge:H solar cells Journal of Non-Crystalline Solids. 338: 651-654. DOI: 10.1016/J.Jnoncrysol.2004.03.072 |
0.755 |
|
2004 |
Ring MA, Dalal VL, Muthukrishnan KK. Properties of a-Si:H and a-(Si,Ge):h films grown using combined hot wire-ECR plasma processes Journal of Non-Crystalline Solids. 338: 61-64. DOI: 10.1016/J.Jnoncrysol.2004.02.022 |
0.822 |
|
2003 |
Dalal VL, Zhu JH, Welsh M, Noack M. Microcrystalline Si:H solar cells fabricated using ECR plasma deposition Iee Proceedings: Circuits, Devices and Systems. 150: 316-321. DOI: 10.1049/ip-cds:20030629 |
0.417 |
|
2003 |
Dalal VL, Seberger P, Ring M, Sharma P. Properties of a-Si:H films grown using hot wire-ECR plasma techniques Thin Solid Films. 430: 91-94. DOI: 10.1016/S0040-6090(03)00079-8 |
0.645 |
|
2003 |
Niu XJ, Dalal VL, Noack M. Properties of nanocrystalline Germanium-Carbon films and devices Materials Research Society Symposium - Proceedings. 762: 619-623. |
0.41 |
|
2003 |
Zhu J, Dalal VL. Microcrystalline (Si,Ge):H Solar Cells Materials Research Society Symposium - Proceedings. 762: 375-380. |
0.48 |
|
2002 |
Keen R, Dalal VL. Growth of high quality fluorinated silicon dioxide for thin film transistors Materials Research Society Symposium - Proceedings. 715: 689-694. DOI: 10.1557/Proc-715-A3.3 |
0.513 |
|
2002 |
Pontoh M, Dalal VL, Gandhi N. Spectroscopy of ECR plasma used for depositing amorphous and microcrystalline silicon films Materials Research Society Symposium - Proceedings. 715: 521-526. DOI: 10.1557/Proc-715-A19.6 |
0.489 |
|
2002 |
Liu Y, Dalal VL. Properties of amorphous silicon-germanium films and devices deposited at higher growth rates Materials Research Society Symposium - Proceedings. 715: 515-520. DOI: 10.1557/Proc-715-A18.3 |
0.55 |
|
2002 |
Liu Y, Dalal VL. Properties of amorphous silicon-germanium films and devices deposited at higher growth rates Mrs Proceedings. 715. DOI: 10.1557/PROC-715-A18.3 |
0.458 |
|
2002 |
Dalal VL. Growth chemistry of amorphous silicon and amorphous silicon-germanium alloys Current Opinion in Solid State and Materials Science. 6: 455-464. DOI: 10.1016/S1359-0286(02)00105-5 |
0.431 |
|
2002 |
Sheng SR, Boshta M, Braunstein R, Dalal VL. On the electronic transport properties of amorphous (Si,Ge) alloys: Charged scattering centers and compositional disorder Journal of Non-Crystalline Solids. 303: 201-207. DOI: 10.1016/S0022-3093(02)00932-8 |
0.478 |
|
2002 |
Dalal VL, Liu Y, Zhou Z, Han K. Growth and properties of low bandgap amorphous (Si, Ge) alloy materials and devices Journal of Non-Crystalline Solids. 299: 1127-1130. DOI: 10.1016/S0022-3093(01)01133-4 |
0.663 |
|
2002 |
Dalal VL, Liu Y, Sharma P. Growth and properties of high quality A-(Si,Ge):H alloys using helium and hydrogen dilution Conference Record of the Ieee Photovoltaic Specialists Conference. 1154-1157. |
0.451 |
|
2001 |
Sheng SR, Braunstein R, Dalal VL. Electronic and optical properties of high quality low bandgap amorphous (Ge, Si) alloys Materials Research Society Symposium - Proceedings. 664: A841-A846. DOI: 10.1557/Proc-664-A8.4 |
0.465 |
|
2001 |
Dalal VL. Some considerations relating to growth chemistry of amorphous Si and (Si,Ge) films and devices Materials Research Society Symposium - Proceedings. 664: A531-A536. DOI: 10.1557/Proc-664-A5.3 |
0.468 |
|
2001 |
DeFreese M, Dalal VL, Falter J. Optical emission spectroscopy of germane plasma produced in an ECR reactor Materials Research Society Symposium - Proceedings. 664: A521-A526. DOI: 10.1557/Proc-664-A5.2 |
0.403 |
|
2001 |
Dalal VL, Herrold JT. Microcrystalline germanium carbide: A new, almost direct gap, thin film material for photovoltaic energy conversion Materials Research Society Symposium - Proceedings. 664: A25121-A25125. DOI: 10.1557/Proc-664-A25.12 |
0.804 |
|
2001 |
Dalal VL. Fundamental considerations regarding the growth of amorphous and microcrystalline silicon and alloy films Thin Solid Films. 395: 173-177. DOI: 10.1016/S0040-6090(01)01255-X |
0.435 |
|
2000 |
Dalal VL, Zhou Z. Low gap amorphous (Si,Ge) solar cells Materials Research Society Symposium - Proceedings. 609: A1531-A1535. DOI: 10.1557/Proc-609-A15.3 |
0.674 |
|
2000 |
Dalal VL, Maxson T, Han K. Microcrystalline Si and (Si,Ge) solar cells Materials Research Society Symposium - Proceedings. 609: A1381-A1385. DOI: 10.1557/Proc-609-A13.8 |
0.478 |
|
2000 |
Erickson K, Dalal VL. Growth of microcrystalline Si and (Si, Ge) on plastic substrates Journal of Non-Crystalline Solids. 266: 685-688. DOI: 10.1016/S0022-3093(99)00805-4 |
0.523 |
|
2000 |
Herrold JT, Dalal VL. Growth and properties of microcrystalline germanium-carbide alloys grown using electron cyclotron resonance plasma processing Journal of Non-Crystalline Solids. 270: 255-259. DOI: 10.1016/S0022-3093(00)00091-0 |
0.791 |
|
2000 |
Dalal VL, Haroon S, Zhou Z, Maxson T, Han K. Influence of plasma chemistry on the properties of a-(Si,Ge):H alloys Journal of Non-Crystalline Solids. 266: 675-679. DOI: 10.1016/S0022-3093(00)00034-X |
0.657 |
|
1999 |
Estwick R, Dalal VL. Simulation of quantum efficiency spectroscopy for amorphous silicon p-i-n junctions Materials Research Society Symposium - Proceedings. 557: 37-42. DOI: 10.1557/Proc-557-37 |
0.393 |
|
1999 |
Shinar R, Shinar J, Williamson DL, Mitra S, Kavak H, Dalal VL. Microstructure and Hydrogen Dynamics in a-Si 1-x C x :H Mrs Proceedings. 557: 329. DOI: 10.1557/Proc-557-329 |
0.322 |
|
1999 |
Shinar J, Shinar R, Williamson DL, Mitra S, Kavak H, Dalal VL. Microstructure and hydrogen dynamics in hydrogenated amorphous silicon carbides Physical Review B - Condensed Matter and Materials Physics. 60: 15875-15889. DOI: 10.1103/Physrevb.60.15875 |
0.471 |
|
1999 |
Herrold J, Dalal VL. Growth and properties of microcrystalline germaniumcarbide alloys Materials Research Society Symposium - Proceedings. 557: 561-566. |
0.36 |
|
1999 |
Sfflnar R, Shinar J, Williamson DL, Mitra S, Kavak H, Dalal VL. Microstrucrure and hydrogen dynamics in a-S1-xCx:H Materials Research Society Symposium - Proceedings. 557: 329-334. |
0.345 |
|
1998 |
Erickson K, Dalal VL, Chumanov G. Growth and Properties of Micro-Crystalline (Si,Ge):H Films Mrs Proceedings. 507. DOI: 10.1557/Proc-507-987 |
0.528 |
|
1998 |
Dalal VL, Maxson T, Haroon S. Influence of Plasma Chemistry on the Properties of Amorphous (Si,Ge) Alloy Devices Mrs Proceedings. 507. DOI: 10.1557/Proc-507-441 |
0.444 |
|
1998 |
Dalal VL, Maxson T, Han K, Haroon S. Improvements in stability of amorphous silicon solar cells by using ECR-CVD processing Journal of Non-Crystalline Solids. 227: 1257-1261. DOI: 10.1016/S0022-3093(98)00251-8 |
0.457 |
|
1997 |
Dalal VL, Maxson T, Girvan R, Haroon S. Stability of Single and Tandem Junction A-Si:H Solar Cells Grown using the ECR Process Mrs Proceedings. 467: 813. DOI: 10.1557/Proc-467-813 |
0.438 |
|
1997 |
Erickson K, Dalal VL, Chumanov G. Growth of Micro-Crystalline SI:H and (SI,GE):H on Polyimide Substrates using ECR Deposition Techniques Mrs Proceedings. 467. DOI: 10.1557/Proc-467-409 |
0.516 |
|
1996 |
Dalal VL, Kaushal S, Girvan R, Sipahi L, Hariasra S. Properties of Substrate-Type a-Sihh Devices Prepared Using ECR Conditions Mrs Proceedings. 420. DOI: 10.1557/Proc-420-39 |
0.458 |
|
1996 |
Dalal VL, Kaushal S, Knox R, Han K, Martin F. Significant improvements in stability of amorphous silicon solar cells by using ECR deposition Journal of Non-Crystalline Solids. 198: 1101-1104. DOI: 10.1016/0022-3093(96)00054-3 |
0.476 |
|
1996 |
Kaushal S, Dalal V, Xu J. Growth of high quality amorphous silicon-germanium films using low pressure remote electron-cyclotron-resonance discharge Journal of Non-Crystalline Solids. 198: 563-566. DOI: 10.1016/0022-3093(95)00764-4 |
0.504 |
|
1995 |
Deboer SJ, Dalal VL, Chumanov G, Bartels R. Low temperature epitaxial silicon film growth using high vacuum electron-cyclotron-resonance plasma deposition Applied Physics Letters. 2528. DOI: 10.1063/1.113156 |
0.505 |
|
1994 |
Dalal VL, Ping EX, Kaushal S, Bhan MK, Leonard M. Growth of high quality amorphous silicon films with significantly improved stability Applied Physics Letters. 64: 1862-1864. DOI: 10.1063/1.111780 |
0.463 |
|
1993 |
Dalal VL, Baldwin G. Design and Fabrication of Graded Bandgap Solar Cells in Amorphous Si and Alloys Mrs Proceedings. 297. DOI: 10.1557/Proc-297-833 |
0.429 |
|
1993 |
Ping EX, Dalal V. Exciton photoluminescence of quantum wells affected by thermal migration and inherent interface fluctuation Journal of Applied Physics. 74: 5349-5353. DOI: 10.1063/1.354236 |
0.319 |
|
1993 |
Dalal V, Knox R, Moradi B. Measurement of Urbach edge and midgap states in amorphous silicon p-i-n devices Solar Energy Materials and Solar Cells. 31: 349-356. DOI: 10.1016/0927-0248(93)90129-Q |
0.451 |
|
1993 |
Dalal VL, Leonard M, Baldwin G. Fabrication of amorphous silicon materials and solar cells at high temperatures using ECR deposition techniques Journal of Non-Crystalline Solids. 164: 71-74. DOI: 10.1016/0022-3093(93)90494-I |
0.507 |
|
1992 |
Dalal VL, Chopra S, Knox R. The Role of Charged Defects in Photo-Degradation of Hydrogenated Amorphous Silicon Mrs Proceedings. 258. DOI: 10.1557/Proc-258-449 |
0.45 |
|
1991 |
Knox RD, Dalal VL, Moradi B. An Investigation of the Influence of Plasma Characteristics on the Electronic and Optical Properties of Device Quality a-Si:H Grown by Electron Cyclotron Resonance Plasma Deposition Mrs Proceedings. 219. DOI: 10.1557/Proc-219-781 |
0.415 |
|
1991 |
Knox RD, Dalal VL, Popov OA. Characterization of electronic and optical properties of device quality a‐Si:H and a‐(Si,Ge):H grown by remote plasma electron cyclotron resonance deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 9: 474-479. DOI: 10.1116/1.577391 |
0.317 |
|
1989 |
Dalal VL, Fuleihan C. Stability Studies on A-Si:H Films Mrs Proceedings. 149: 601. DOI: 10.1557/Proc-149-601 |
0.442 |
|
1987 |
Dalal VL, Booker J. Amorphous alloy tandem junction solar cells Solar Cells. 21: 451. DOI: 10.1016/0379-6787(87)90148-7 |
0.347 |
|
1982 |
Akhtar M, Dalal VL, Ramaprasad KR, Gau S, Cambridge JA. Electronic and optical properties of amorphous Si:H films deposited by chemical vapor deposition Applied Physics Letters. 41: 1146-1148. DOI: 10.1063/1.93414 |
0.411 |
|
1981 |
Fraser Russell TW, Dalal VL. The Potential for Thin-Film Photovoltaic Cells Ieee Transactions On Education. 24: 239-242. DOI: 10.1109/Te.1981.4321498 |
0.317 |
|
1980 |
Dalal VL. Design Considerations for a-Si Solar Cells Ieee Transactions On Electron Devices. 27: 662-670. DOI: 10.1109/T-Ed.1980.19920 |
0.504 |
|
1980 |
Dalal VL. Analysis of amorphous silicon solar cells Solar Cells. 2: 261-273. DOI: 10.1016/0379-6787(80)90030-7 |
0.484 |
|
1979 |
Dalal VL, Rothwarf A. Comment on "a simple measurement of absolute solar cell efficiency" Journal of Applied Physics. 50: 2980-2981. DOI: 10.1063/1.326181 |
0.33 |
|
1977 |
Dalal VL, Moore AR. Design considerations for high-intensity solar cells Journal of Applied Physics. 48: 1244-1251. DOI: 10.1063/1.323766 |
0.455 |
|
1975 |
Dalal VL, Kressel H, Robinson PH. Epitaxial silicon solar cell Journal of Applied Physics. 46: 1283-1285. DOI: 10.1063/1.321693 |
0.326 |
|
1972 |
Dalal VL. Possible field-assisted infrared photocathode Journal of Applied Physics. 43: 1160-1164. DOI: 10.1063/1.1661230 |
0.339 |
|
1972 |
Dalal VL, Lampert MA. High electric field effects in n-silicon Journal of Applied Physics. 43: 4600-4603. DOI: 10.1063/1.1660972 |
0.306 |
|
1971 |
Dalal VL, Dreeben AB, Triano A. Temperature dependence of hole velocity in p-GaAs Journal of Applied Physics. 42: 2864-2867. DOI: 10.1063/1.1660641 |
0.314 |
|
1971 |
Dalal VL. Simple model for internal photoemission Journal of Applied Physics. 42: 2274-2279. DOI: 10.1063/1.1660536 |
0.342 |
|
1969 |
Dalal VL. Avalanche multiplication in bulk n-Si Applied Physics Letters. 15: 379-381. DOI: 10.1063/1.1652867 |
0.327 |
|
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