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Vikram L. Dalal - Publications

Affiliations: 
Electrical and Computer Engineering Iowa State University, Ames, IA, United States 
Area:
Electronics and Electrical Engineering
Website:
https://www.engineering.iastate.edu/people/profile/vdalal/
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145 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Kumar P, Dalal V, Sharma N, Kokane S, Ghosh DK, Kumar P, Sharma AK. Characterization of the heavy metal binding properties of periplasmic metal uptake protein CLas-ZnuA2. Metallomics : Integrated Biometal Science. PMID 31853532 DOI: 10.1039/C9Mt00200F  0.389
2019 Bagheri B, Kottokkaran R, Poly L, Reichert B, Sharikadze S, Noack M, Dalal V. Influence of post-deposition selenization and cadmium chloride assisted grain enhancement on electronic properties of cadmium selenide thin films Aip Advances. 9: 125012. DOI: 10.1063/1.5124881  0.442
2019 Kottokkaran R, Gaonkar HA, Abbas HA, Noack M, Dalal V. Performance and stability of co-evaporated vapor deposited perovskite solar cells Journal of Materials Science: Materials in Electronics. 30: 5487-5494. DOI: 10.1007/S10854-019-00842-Y  0.402
2018 Saini G, Sharma N, Dalal V, Warghane A, Ghosh DK, Kumar P, Sharma AK. The analysis of subtle internal communications through mutation studies in periplasmic metal uptake protein CLas-ZnuA2. Journal of Structural Biology. PMID 30125692 DOI: 10.1016/J.Jsb.2018.08.013  0.39
2018 Kottokkaran R, Gaonkar HA, Bagheri B, Dalal VL. Efficient p-i-n inorganic CsPbI3 perovskite solar cell deposited using layer-by-layer vacuum deposition Journal of Vacuum Science and Technology. 36: 41201. DOI: 10.1116/1.5029253  0.427
2018 Bhattacharya J, Biswas R, Dalal VL. Surface States and Interface States: Two Fundamental Sources of Photodegradation in Organic Bulk Heterojunction Devices Ieee Journal of Photovoltaics. 8: 1647-1655. DOI: 10.1109/Jphotov.2018.2863542  0.562
2018 Bhattacharya J, Peer A, Joshi PH, Biswas R, Dalal VL. Blue photon management by inhouse grown ZnO:Al cathode for enhanced photostability in polymer solar cells Solar Energy Materials and Solar Cells. 179: 95-101. DOI: 10.1016/J.Solmat.2018.02.011  0.611
2017 Shah S, Biswas R, Koschny T, Dalal V. Unusual infrared absorption increases in photo-degraded organic films. Nanoscale. PMID 28613318 DOI: 10.1039/C7Nr01132F  0.375
2017 Singh R, Kottokkaran R, Dalal VL, Balasubramanian G. Engineering band gap and electronic transport in organic-inorganic halide perovskites by superlattices. Nanoscale. PMID 28534909 DOI: 10.1039/C7Nr00459A  0.332
2017 Bhattacharya J, Joshi PH, Biswas R, Dalal VL. Pathway for recovery of photo-degraded polymer solar cells by post degradation thermal anneal Solar Energy Materials and Solar Cells. 164: 70-79. DOI: 10.1016/J.Solmat.2017.02.012  0.59
2016 Joshi PH, Zhang L, Hossain IM, Abbas HA, Kottokkaran R, Nehra SP, Dhaka M, Noack M, Dalal VL. The physics of photon induced degradation of perovskite solar cells Aip Advances. 6: 115114. DOI: 10.1063/1.4967817  0.374
2016 Maynard B, Long Q, Schiff EA, Yang M, Zhu K, Kottokkaran R, Abbas H, Dalal VL. Electron and hole drift mobility measurements on methylammonium lead iodide perovskite solar cells Applied Physics Letters. 108. DOI: 10.1063/1.4948344  0.317
2015 Balaji G, Joshi PH, Abbas HA, Zhang L, Kottokkaran R, Samiee M, Noack M, Dalal VL. CH3NH3PbI3 from non-iodide lead salts for perovskite solar cells via the formation of PbI2. Physical Chemistry Chemical Physics : Pccp. 17: 10369-72. PMID 25824113 DOI: 10.1039/C5Cp00073D  0.306
2015 Kottokkaran R, Abbas H, Balaji G, Zhang L, Samiee M, Kitahara A, Noack M, Dalal V. Highly reproducible vapor deposition technique, device physics and structural instability of perovskite solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355612  0.32
2015 Abbas HA, Kottokkaran R, Ganapathy B, Samiee M, Zhang L, Kitahara A, Noack M, Dalal VL. High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer Apl Materials. 3. DOI: 10.1063/1.4905932  0.789
2014 Konduri S, Mulder W, Dalal VL. Defects and doping in nanocrystalline silicon-germanium devices Materials Research Society Symposium Proceedings. 1666. DOI: 10.1557/Opl.2014.797  0.486
2014 Samiee M, Konduri S, Ganapathy B, Kottokkaran R, Abbas HA, Kitahara A, Joshi P, Zhang L, Noack M, Dalal V. Defect density and dielectric constant in perovskite solar cells Applied Physics Letters. 105. DOI: 10.1063/1.4897329  0.76
2014 Samiee M, Joshi P, Aidarkhanov D, Dalal V. Measurement of defect densities and Urbach energies of tail states in PTB7 solar cells Applied Physics Letters. 105. DOI: 10.1063/1.4896782  0.408
2014 Samiee M, Modtland B, Aidarkhanov D, Dalal VL. More stable hybrid organic solar cells deposited on amorphous Si electron transfer layer Applied Physics Letters. 104. DOI: 10.1063/1.4878405  0.467
2014 Pattnaik S, Chakravarty N, Biswas R, Dalal V, Slafer D. Nano-photonic and nano-plasmonic enhancements in thin film silicon solar cells Solar Energy Materials and Solar Cells. 129: 115-123. DOI: 10.1016/J.Solmat.2014.05.010  0.775
2013 Mahadevapuram RC, Dalal VL, Chaudhary S. Effect of a-Si:H–polymer interface on the behavior of hybrid solar cells Nanomaterials and Energy. 2: 186-193. DOI: 10.1680/Nme.13.00014  0.43
2013 Kajjam S, Konduri S, Noack M, Shamshimov G, Ussembayev N, Dalal V. Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si Materials Research Society Symposium Proceedings. 1536: 169-173. DOI: 10.1557/Opl.2013.786  0.793
2013 Biswas R, Pattnaik S, Xu C, Bhattacharya J, Chakravarty N, Dalal V. Enhancement of solar cells with photonic and plasmonic crystals - Overcoming the Lambertian limit Journal of Materials Research. 28: 1021-1030. DOI: 10.1557/Jmr.2013.41  0.799
2013 Li Z, Dalal VL. Influence of chemical annealing on electronic properties of a-(Si, Ge) Conference Record of the Ieee Photovoltaic Specialists Conference. 546-549. DOI: 10.1109/PVSC.2013.6744210  0.437
2013 Pattnaik S, Xiao T, Shinar R, Shinar J, Dalal VL. Novel hybrid amorphous/organic tandem junction solar cell Ieee Journal of Photovoltaics. 3: 295-299. DOI: 10.1109/JPHOTOV.2012.2212700  0.561
2013 Kajjam S, Konduri S, Dalal VL. Influence of oxygen contamination on minority carrier lifetime and defect density in nanocrystalline Si Applied Physics Letters. 103. DOI: 10.1063/1.4819204  0.787
2013 Balaji G, Esfahani MS, Joshi P, Bhattacharaya J, Jeffries-El M, Dalal V. Synthesis and photovoltaic properties of a furan-diketopyrrolopyrrole- fluorene terpolymer European Polymer Journal. 49: 3921-3928. DOI: 10.1016/J.Eurpolymj.2013.08.021  0.313
2012 Pattnaik S, Chakravarty N, Biswas R, Slafer D, Dalal V. Light-trapping in thin film silicon solar cells with a combination of periodic and randomly textured back-reflectors Materials Research Society Symposium Proceedings. 1426: 117-123. DOI: 10.1557/Opl.2012.888  0.726
2012 Konduri S, Noack M, Dalal V. Grain growth and mobility in nanocrystalline Ge films Materials Research Society Symposium Proceedings. 1426: 359-364. DOI: 10.1557/Opl.2012.1272  0.46
2012 Biswas R, Xu C, Pattnaik S, Bhattacharya J, Chakravarty N, Dalal V. Photonic and plasmonic crystal based enhancement of solar cells- overcoming the Lambertian classical 4n2 limit Materials Research Society Symposium Proceedings. 1426: 137-147. DOI: 10.1557/Opl.2012.1097  0.801
2012 Pattnaik S, Chakravarty N, Bhattacharya J, Biswas R, Slafer D, Dalal VL. Thin film Si photovoltaic devices on photonic structures fabricated on steel and polymer substrates Materials Research Society Symposium Proceedings. 1321: 99-104. DOI: 10.1557/Opl.2011.943  0.798
2012 Shyam A, Congreve D, Noack M, Dalal V. Properties of A-(Si,Ge) materials and devices grown using chemical annealing Materials Research Society Symposium Proceedings. 1321: 229-234. DOI: 10.1557/Opl.2011.1094  0.707
2012 Dalal VL, Mayer R, Bhattacharya J, Samiee M. Stability of organic solar cells Ieee International Reliability Physics Symposium Proceedings. 4A.5.1-4A.5.4. DOI: 10.1109/IRPS.2012.6241829  0.516
2012 Bhattacharya J, Mayer RW, Samiee M, Dalal VL. Photo-induced changes in fundamental properties of organic solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4711806  0.591
2012 Congreve D, Kajjam S, Chakravarty N, Dalal V. Influence of oxygen on defect densities in nanocrystalline Si Journal of Non-Crystalline Solids. 358: 2071-2073. DOI: 10.1016/J.Jnoncrysol.2012.01.049  0.805
2012 Bhattacharya J, Chakravarty N, Pattnaik S, Slafer WD, Biswas R, Dalal V. Comparison of optical properties of periodic photonic-plasmonic and randomly textured back reflectors for nc-Si solar cells Journal of Non-Crystalline Solids. 358: 2313-2318. DOI: 10.1016/J.Jnoncrysol.2011.12.108  0.784
2011 Chakravarty N, Pattnaik S, Biswas R, Bhattacharya J, Slafer D, Dalal VL. Superlattice solar cells on nanoimprinted photo-plasmon substrates Conference Record of the Ieee Photovoltaic Specialists Conference. 000799-000801. DOI: 10.1109/PVSC.2011.6186075  0.737
2011 Dalal VL, Li Z. Physics of instability of thin film Si and (Si,Ge) alloy solar cells Ieee International Reliability Physics Symposium Proceedings. 5E.2.1-5E.2.5. DOI: 10.1109/IRPS.2011.5784533  0.37
2011 Bhattacharya J, Chakravarty N, Pattnaik S, Dennis Slafer W, Biswas R, Dalal VL. A photonic-plasmonic structure for enhancing light absorption in thin film solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3641469  0.781
2010 Curtin B, Biswas R, Dalal V. Enhanced Absorption in Amorphous Silicon Solar Cells Using Plasmonic and Photonic Crystals – Measurement and Simulation Mrs Proceedings. 1248. DOI: 10.1557/Proc-1248-D05-03  0.382
2010 Curtin B, Biswas R, Dalal V. Photonic Crystal Back Reflectors for Enhanced Absorption in Amorphous Silicon Solar Cells Mrs Proceedings. 1245. DOI: 10.1557/Proc-1245-A07-21  0.376
2010 Dalal V, Shyam A, Congreve D, Noack M. High Quality, Low Bandgap a-Si Films and Devices Produced Using Chemical Annealing Mrs Proceedings. 1245. DOI: 10.1557/Proc-1245-A04-03  0.671
2010 Pattnaik S, Biswas R, Dalal VL, Slafer D, Ji J. Amorphous silicon solar cells on plastic based photonic structures Conference Record of the Ieee Photovoltaic Specialists Conference. 1483-1486. DOI: 10.1109/PVSC.2010.5614348  0.612
2010 Biswas R, Bhattacharya J, Lewis B, Chakravarty N, Dalal V. Enhanced nanocrystalline silicon solar cell with a photonic crystal back-reflector Solar Energy Materials and Solar Cells. 94: 2337-2342. DOI: 10.1016/J.Solmat.2010.08.007  0.716
2009 Dalal VL. Nanocrystalline Superlattice Solar Cell Mrs Proceedings. 1153. DOI: 10.1557/Proc-1153-A10-06  0.319
2009 Curtin B, Biswas R, Dalal V. Fabrication of Photonic Crystal based Back Reflectors for Light Management and Enhanced Absorption in Amorphous Silicon Solar Cells Mrs Proceedings. 1153. DOI: 10.1557/Proc-1153-A07-15  0.412
2009 Biswas R, Zhou D, Curtin B, Chakravarty N, Dalal V. Surface plasmon enhancement of optical absorption of thin film A-SI:H solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 000557-000560. DOI: 10.1109/PVSC.2009.5411623  0.638
2009 Dalal V, Madhavan A, Saripalli S, Chakravarty N, Noack M. Device physics of nanocrystalline silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 001667-001671. DOI: 10.1109/PVSC.2009.5411412  0.796
2009 Curtin B, Biswas R, Dalal V. Photonic crystal based back reflectors for light management and enhanced absorption in amorphous silicon solar cells Applied Physics Letters. 95. DOI: 10.1063/1.3269593  0.439
2009 Madhavan A, Chakravarty N, Dalal VL. Nanocrystalline silicon superlattice solar cells Materials Research Society Symposium Proceedings. 1153: 213-218.  0.728
2008 Saripalli S, Dalal V. Macrocrystalline silicon-germanium solar cells fabricated using VHF PECVD 2008 Ieee International Conference On Electro/Information Technology, Ieee Eit 2008 Conference. 414-418. DOI: 10.1109/EIT.2008.4554338  0.73
2008 Madhavan A, Dalal VL, Noack MA. Superlattice structures for nanocrystalline silicon solar cells 2008 Ieee International Conference On Electro/Information Technology, Ieee Eit 2008 Conference. 383-388. DOI: 10.1109/EIT.2008.4554333  0.609
2008 Jariwala C, Chainani AA, Eguchi R, Matsunami M, Shin S, Bhatt S, Dalal V, John PI. Low power density multihole cathode very-high-frequency plasma for mixed phase Si:H thin films Applied Physics Letters. 93: 191502. DOI: 10.1063/1.3023066  0.442
2008 Jaju V, Dalal V. Growth and properties of fluorinated plasma oxide for Si MOSFET devices Journal of Non-Crystalline Solids. 354: 2839-2842. DOI: 10.1016/J.Jnoncrysol.2007.10.103  0.807
2008 Saripalli S, Sharma P, Reusswig P, Dalal V. Transport properties of nanocrystalline silicon and silicon-germanium Journal of Non-Crystalline Solids. 354: 2426-2429. DOI: 10.1016/J.Jnoncrysol.2007.10.060  0.778
2008 Dalal VL, Madhavan A. Alternative designs for nanocrystalline silicon solar cells Journal of Non-Crystalline Solids. 354: 2403-2406. DOI: 10.1016/J.Jnoncrysol.2007.09.110  0.691
2008 Ghosh D, Shinar R, Dalal V, Zhou Z, Shinar J. Amorphous and nanocrystalline p-i-n Si and Si,Ge photodetectors for structurally integrated O2 sensors Journal of Non-Crystalline Solids. 354: 2606-2609. DOI: 10.1016/J.Jnoncrysol.2007.09.065  0.563
2007 Muthukrishnan K, Dalal V, Noack M. Growth and Electronic Properties in Hot Wire Deposited Nanocrystalline Si Solar Cells Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A21-06  0.774
2007 Madhavan A, Ghosh D, Noack M, Dalal V. Influence of Amorphous Layers on Performance of Nanocrystalline/Amorphous Superlattice Si Solar Cells Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A18-02  0.716
2007 Ghosh D, Shinar R, Dalal VL, Zhou Z, Shinar J. PECVD grown p-i-n Si and Si,Ge thin film photodetectors for integrated oxygen sensors Materials Research Society Symposium Proceedings. 989: 269-274. DOI: 10.1557/Proc-0989-A12-01  0.539
2007 Jaju V, Dalal V. Channel Reliability in MOSFETs with Gate Oxide Grown using ECR Plasma of O2/He Mrs Proceedings. 989. DOI: 10.1557/Proc-0989-A05-09  0.774
2007 Dalal VL, Muthukrishnan K, Saripalli S, Stieler D, Noack M. Growth and electronic properties of nanocrystalline Si Materials Research Society Symposium Proceedings. 910: 293-302. DOI: 10.1557/Proc-0910-A13-01  0.827
2007 Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. Thin films of GeC deposited using a unique hollow cathode sputtering technique Materials Research Society Symposium Proceedings. 910: 163-168. DOI: 10.1557/Proc-0910-A07-03  0.475
2007 Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. The properties of Ge-C thin films deposited using dual hollow cathodes Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 1: 114-117. DOI: 10.1109/WCPEC.2006.279377  0.423
2006 Panda D, Noack M, Dalal V. P Channel Mosfet Devices in Nanocrystalline Silicon Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A22-07  0.814
2006 Panda DP, Dalal V. Influence of Annealing on Crystallinity and Conductivity of p-type Nanocrystalline Si films Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A08-03  0.821
2006 Stieler D, Dalal VL, Muthukrishnan K, Noack M, Schares E. Electron mobility in nanocrystalline silicon devices Journal of Applied Physics. 100. DOI: 10.1063/1.2234545  0.774
2006 Huguenin-Love JL, Soukup RJ, Ianno NJ, Schrader JS, Thompson DW, Dalal VL. Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering technique Materials Science in Semiconductor Processing. 9: 759-763. DOI: 10.1016/J.Mssp.2006.08.026  0.528
2006 Wang N, Dalal VL. Improving stability of amorphous silicon using chemical annealing with helium Journal of Non-Crystalline Solids. 352: 1937-1940. DOI: 10.1016/J.Jnoncrysol.2006.02.033  0.669
2006 Dalal VL, Muthukrishnan K, Niu X, Stieler D. Growth chemistry of nanocrystalline silicon and germanium films Journal of Non-Crystalline Solids. 352: 892-895. DOI: 10.1016/J.Jnoncrysol.2006.01.081  0.804
2006 Shinar R, Ghosh D, Choudhury B, Noack M, Dalal VL, Shinar J. Luminescence-based oxygen sensor structurally integrated with an organic light-emitting device excitation source and an amorphous Si-based photodetector Journal of Non-Crystalline Solids. 352: 1995-1998. DOI: 10.1016/J.Jnoncrysol.2005.12.029  0.674
2005 Wang N, Dalal VL. Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with Helium Mrs Proceedings. 862. DOI: 10.1557/PROC-862-A20.6  0.654
2005 Niu X, Booher J, Dalal VL. Nanocrystalline germanium and germanium carbide films and devices Materials Research Society Symposium Proceedings. 862: 151-156. DOI: 10.1557/Proc-862-A10.2  0.679
2005 Niu X, Dalal VL. Growth and properties of nanocrystalline germanium films Journal of Applied Physics. 98. DOI: 10.1063/1.2127125  0.631
2005 Dalal VL, Sharma P. Defect density and diffusion length of holes in nanocrystalline silicon devices Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1873062  0.493
2005 Boshta M, Alavi B, Braunstein R, Bärner K, Dalal VL. Electronic transport properties of the μc-(Si,Ge) alloys prepared by ECR Solar Energy Materials and Solar Cells. 87: 387-393. DOI: 10.1016/J.Solmat.2004.07.032  0.507
2005 Dalal VL, Muthukrishnan K, Stieler D, Noack M. Growth chemistry of nanocrystalline si:h films Materials Research Society Symposium Proceedings. 862: 69-74.  0.745
2005 Soukup RJ, Ianno NJ, Schrader JS, Dalal VL. Polycrystalline GeC thin films deposited using a unique hollow cathode sputtering technique Materials Research Society Symposium Proceedings. 862: 195-200.  0.375
2005 Dalal VL, Leib J, Muthukrishnan K, Stieler D, Noack M. Material properties and growth chemistry of nancorystalline silicon films used for photovoltaic devices Conference Record of the Ieee Photovoltaic Specialists Conference. 1448-1451.  0.773
2005 Wang N, Dalal VL. Nanocrystalline Si films and devices produced using chemical annealing with helium Materials Research Society Symposium Proceedings. 862: 75-80.  0.44
2005 Niu X, Booher J, Dalal VL. Growth and properties of nanocrystalline germanium and germanium-carbide films and devices Conference Record of the Ieee Photovoltaic Specialists Conference. 1508-1511.  0.397
2004 McDonald J, Dalal VL, Noack M. Development of Top-Gate Nanocrystalline Si:H Thin Film Transistors Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A9.37  0.47
2004 Dalal VL, Sharma P, Staab D, Noack M, Han K. Defect densities, diffusion lengths and device physics in nanocrystalline Si:H solar cells Materials Research Society Symposium Proceedings. 808: 569-574. DOI: 10.1557/Proc-808-A8.2  0.668
2004 Dalal VL, Graves J, Leib J. Influence of pressure and ion bombardment on the growth and properties of nanocrystalline silicon materials Applied Physics Letters. 85: 1413-1414. DOI: 10.1063/1.1784550  0.447
2004 Boshta M, Bärner K, Braunstein R, Alavi B, Dalal V. Determination of the trap state density differences in hydrogenated microcrystalline silicon - Germanium (Si:Ge:H) alloys Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 112: 69-72. DOI: 10.1016/J.Mseb.2004.06.009  0.406
2004 Zhu J, Dalal VL, Ring MA, Gutierrez JJ, Cohen JD. Growth and properties of amorphous Ge:H solar cells Journal of Non-Crystalline Solids. 338: 651-654. DOI: 10.1016/J.Jnoncrysol.2004.03.072  0.755
2004 Ring MA, Dalal VL, Muthukrishnan KK. Properties of a-Si:H and a-(Si,Ge):h films grown using combined hot wire-ECR plasma processes Journal of Non-Crystalline Solids. 338: 61-64. DOI: 10.1016/J.Jnoncrysol.2004.02.022  0.822
2003 Dalal VL, Zhu JH, Welsh M, Noack M. Microcrystalline Si:H solar cells fabricated using ECR plasma deposition Iee Proceedings: Circuits, Devices and Systems. 150: 316-321. DOI: 10.1049/ip-cds:20030629  0.417
2003 Dalal VL, Seberger P, Ring M, Sharma P. Properties of a-Si:H films grown using hot wire-ECR plasma techniques Thin Solid Films. 430: 91-94. DOI: 10.1016/S0040-6090(03)00079-8  0.645
2003 Niu XJ, Dalal VL, Noack M. Properties of nanocrystalline Germanium-Carbon films and devices Materials Research Society Symposium - Proceedings. 762: 619-623.  0.41
2003 Zhu J, Dalal VL. Microcrystalline (Si,Ge):H Solar Cells Materials Research Society Symposium - Proceedings. 762: 375-380.  0.48
2002 Keen R, Dalal VL. Growth of high quality fluorinated silicon dioxide for thin film transistors Materials Research Society Symposium - Proceedings. 715: 689-694. DOI: 10.1557/Proc-715-A3.3  0.513
2002 Pontoh M, Dalal VL, Gandhi N. Spectroscopy of ECR plasma used for depositing amorphous and microcrystalline silicon films Materials Research Society Symposium - Proceedings. 715: 521-526. DOI: 10.1557/Proc-715-A19.6  0.489
2002 Liu Y, Dalal VL. Properties of amorphous silicon-germanium films and devices deposited at higher growth rates Materials Research Society Symposium - Proceedings. 715: 515-520. DOI: 10.1557/Proc-715-A18.3  0.55
2002 Liu Y, Dalal VL. Properties of amorphous silicon-germanium films and devices deposited at higher growth rates Mrs Proceedings. 715. DOI: 10.1557/PROC-715-A18.3  0.458
2002 Dalal VL. Growth chemistry of amorphous silicon and amorphous silicon-germanium alloys Current Opinion in Solid State and Materials Science. 6: 455-464. DOI: 10.1016/S1359-0286(02)00105-5  0.431
2002 Sheng SR, Boshta M, Braunstein R, Dalal VL. On the electronic transport properties of amorphous (Si,Ge) alloys: Charged scattering centers and compositional disorder Journal of Non-Crystalline Solids. 303: 201-207. DOI: 10.1016/S0022-3093(02)00932-8  0.478
2002 Dalal VL, Liu Y, Zhou Z, Han K. Growth and properties of low bandgap amorphous (Si, Ge) alloy materials and devices Journal of Non-Crystalline Solids. 299: 1127-1130. DOI: 10.1016/S0022-3093(01)01133-4  0.663
2002 Dalal VL, Liu Y, Sharma P. Growth and properties of high quality A-(Si,Ge):H alloys using helium and hydrogen dilution Conference Record of the Ieee Photovoltaic Specialists Conference. 1154-1157.  0.451
2001 Sheng SR, Braunstein R, Dalal VL. Electronic and optical properties of high quality low bandgap amorphous (Ge, Si) alloys Materials Research Society Symposium - Proceedings. 664: A841-A846. DOI: 10.1557/Proc-664-A8.4  0.465
2001 Dalal VL. Some considerations relating to growth chemistry of amorphous Si and (Si,Ge) films and devices Materials Research Society Symposium - Proceedings. 664: A531-A536. DOI: 10.1557/Proc-664-A5.3  0.468
2001 DeFreese M, Dalal VL, Falter J. Optical emission spectroscopy of germane plasma produced in an ECR reactor Materials Research Society Symposium - Proceedings. 664: A521-A526. DOI: 10.1557/Proc-664-A5.2  0.403
2001 Dalal VL, Herrold JT. Microcrystalline germanium carbide: A new, almost direct gap, thin film material for photovoltaic energy conversion Materials Research Society Symposium - Proceedings. 664: A25121-A25125. DOI: 10.1557/Proc-664-A25.12  0.804
2001 Dalal VL. Fundamental considerations regarding the growth of amorphous and microcrystalline silicon and alloy films Thin Solid Films. 395: 173-177. DOI: 10.1016/S0040-6090(01)01255-X  0.435
2000 Dalal VL, Zhou Z. Low gap amorphous (Si,Ge) solar cells Materials Research Society Symposium - Proceedings. 609: A1531-A1535. DOI: 10.1557/Proc-609-A15.3  0.674
2000 Dalal VL, Maxson T, Han K. Microcrystalline Si and (Si,Ge) solar cells Materials Research Society Symposium - Proceedings. 609: A1381-A1385. DOI: 10.1557/Proc-609-A13.8  0.478
2000 Erickson K, Dalal VL. Growth of microcrystalline Si and (Si, Ge) on plastic substrates Journal of Non-Crystalline Solids. 266: 685-688. DOI: 10.1016/S0022-3093(99)00805-4  0.523
2000 Herrold JT, Dalal VL. Growth and properties of microcrystalline germanium-carbide alloys grown using electron cyclotron resonance plasma processing Journal of Non-Crystalline Solids. 270: 255-259. DOI: 10.1016/S0022-3093(00)00091-0  0.791
2000 Dalal VL, Haroon S, Zhou Z, Maxson T, Han K. Influence of plasma chemistry on the properties of a-(Si,Ge):H alloys Journal of Non-Crystalline Solids. 266: 675-679. DOI: 10.1016/S0022-3093(00)00034-X  0.657
1999 Estwick R, Dalal VL. Simulation of quantum efficiency spectroscopy for amorphous silicon p-i-n junctions Materials Research Society Symposium - Proceedings. 557: 37-42. DOI: 10.1557/Proc-557-37  0.393
1999 Shinar R, Shinar J, Williamson DL, Mitra S, Kavak H, Dalal VL. Microstructure and Hydrogen Dynamics in a-Si 1-x C x :H Mrs Proceedings. 557: 329. DOI: 10.1557/Proc-557-329  0.322
1999 Shinar J, Shinar R, Williamson DL, Mitra S, Kavak H, Dalal VL. Microstructure and hydrogen dynamics in hydrogenated amorphous silicon carbides Physical Review B - Condensed Matter and Materials Physics. 60: 15875-15889. DOI: 10.1103/Physrevb.60.15875  0.471
1999 Herrold J, Dalal VL. Growth and properties of microcrystalline germaniumcarbide alloys Materials Research Society Symposium - Proceedings. 557: 561-566.  0.36
1999 Sfflnar R, Shinar J, Williamson DL, Mitra S, Kavak H, Dalal VL. Microstrucrure and hydrogen dynamics in a-S1-xCx:H Materials Research Society Symposium - Proceedings. 557: 329-334.  0.345
1998 Erickson K, Dalal VL, Chumanov G. Growth and Properties of Micro-Crystalline (Si,Ge):H Films Mrs Proceedings. 507. DOI: 10.1557/Proc-507-987  0.528
1998 Dalal VL, Maxson T, Haroon S. Influence of Plasma Chemistry on the Properties of Amorphous (Si,Ge) Alloy Devices Mrs Proceedings. 507. DOI: 10.1557/Proc-507-441  0.444
1998 Dalal VL, Maxson T, Han K, Haroon S. Improvements in stability of amorphous silicon solar cells by using ECR-CVD processing Journal of Non-Crystalline Solids. 227: 1257-1261. DOI: 10.1016/S0022-3093(98)00251-8  0.457
1997 Dalal VL, Maxson T, Girvan R, Haroon S. Stability of Single and Tandem Junction A-Si:H Solar Cells Grown using the ECR Process Mrs Proceedings. 467: 813. DOI: 10.1557/Proc-467-813  0.438
1997 Erickson K, Dalal VL, Chumanov G. Growth of Micro-Crystalline SI:H and (SI,GE):H on Polyimide Substrates using ECR Deposition Techniques Mrs Proceedings. 467. DOI: 10.1557/Proc-467-409  0.516
1996 Dalal VL, Kaushal S, Girvan R, Sipahi L, Hariasra S. Properties of Substrate-Type a-Sihh Devices Prepared Using ECR Conditions Mrs Proceedings. 420. DOI: 10.1557/Proc-420-39  0.458
1996 Dalal VL, Kaushal S, Knox R, Han K, Martin F. Significant improvements in stability of amorphous silicon solar cells by using ECR deposition Journal of Non-Crystalline Solids. 198: 1101-1104. DOI: 10.1016/0022-3093(96)00054-3  0.476
1996 Kaushal S, Dalal V, Xu J. Growth of high quality amorphous silicon-germanium films using low pressure remote electron-cyclotron-resonance discharge Journal of Non-Crystalline Solids. 198: 563-566. DOI: 10.1016/0022-3093(95)00764-4  0.504
1995 Deboer SJ, Dalal VL, Chumanov G, Bartels R. Low temperature epitaxial silicon film growth using high vacuum electron-cyclotron-resonance plasma deposition Applied Physics Letters. 2528. DOI: 10.1063/1.113156  0.505
1994 Dalal VL, Ping EX, Kaushal S, Bhan MK, Leonard M. Growth of high quality amorphous silicon films with significantly improved stability Applied Physics Letters. 64: 1862-1864. DOI: 10.1063/1.111780  0.463
1993 Dalal VL, Baldwin G. Design and Fabrication of Graded Bandgap Solar Cells in Amorphous Si and Alloys Mrs Proceedings. 297. DOI: 10.1557/Proc-297-833  0.429
1993 Ping EX, Dalal V. Exciton photoluminescence of quantum wells affected by thermal migration and inherent interface fluctuation Journal of Applied Physics. 74: 5349-5353. DOI: 10.1063/1.354236  0.319
1993 Dalal V, Knox R, Moradi B. Measurement of Urbach edge and midgap states in amorphous silicon p-i-n devices Solar Energy Materials and Solar Cells. 31: 349-356. DOI: 10.1016/0927-0248(93)90129-Q  0.451
1993 Dalal VL, Leonard M, Baldwin G. Fabrication of amorphous silicon materials and solar cells at high temperatures using ECR deposition techniques Journal of Non-Crystalline Solids. 164: 71-74. DOI: 10.1016/0022-3093(93)90494-I  0.507
1992 Dalal VL, Chopra S, Knox R. The Role of Charged Defects in Photo-Degradation of Hydrogenated Amorphous Silicon Mrs Proceedings. 258. DOI: 10.1557/Proc-258-449  0.45
1991 Knox RD, Dalal VL, Moradi B. An Investigation of the Influence of Plasma Characteristics on the Electronic and Optical Properties of Device Quality a-Si:H Grown by Electron Cyclotron Resonance Plasma Deposition Mrs Proceedings. 219. DOI: 10.1557/Proc-219-781  0.415
1991 Knox RD, Dalal VL, Popov OA. Characterization of electronic and optical properties of device quality a‐Si:H and a‐(Si,Ge):H grown by remote plasma electron cyclotron resonance deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 9: 474-479. DOI: 10.1116/1.577391  0.317
1989 Dalal VL, Fuleihan C. Stability Studies on A-Si:H Films Mrs Proceedings. 149: 601. DOI: 10.1557/Proc-149-601  0.442
1987 Dalal VL, Booker J. Amorphous alloy tandem junction solar cells Solar Cells. 21: 451. DOI: 10.1016/0379-6787(87)90148-7  0.347
1982 Akhtar M, Dalal VL, Ramaprasad KR, Gau S, Cambridge JA. Electronic and optical properties of amorphous Si:H films deposited by chemical vapor deposition Applied Physics Letters. 41: 1146-1148. DOI: 10.1063/1.93414  0.411
1981 Fraser Russell TW, Dalal VL. The Potential for Thin-Film Photovoltaic Cells Ieee Transactions On Education. 24: 239-242. DOI: 10.1109/Te.1981.4321498  0.317
1980 Dalal VL. Design Considerations for a-Si Solar Cells Ieee Transactions On Electron Devices. 27: 662-670. DOI: 10.1109/T-Ed.1980.19920  0.504
1980 Dalal VL. Analysis of amorphous silicon solar cells Solar Cells. 2: 261-273. DOI: 10.1016/0379-6787(80)90030-7  0.484
1979 Dalal VL, Rothwarf A. Comment on "a simple measurement of absolute solar cell efficiency" Journal of Applied Physics. 50: 2980-2981. DOI: 10.1063/1.326181  0.33
1977 Dalal VL, Moore AR. Design considerations for high-intensity solar cells Journal of Applied Physics. 48: 1244-1251. DOI: 10.1063/1.323766  0.455
1975 Dalal VL, Kressel H, Robinson PH. Epitaxial silicon solar cell Journal of Applied Physics. 46: 1283-1285. DOI: 10.1063/1.321693  0.326
1972 Dalal VL. Possible field-assisted infrared photocathode Journal of Applied Physics. 43: 1160-1164. DOI: 10.1063/1.1661230  0.339
1972 Dalal VL, Lampert MA. High electric field effects in n-silicon Journal of Applied Physics. 43: 4600-4603. DOI: 10.1063/1.1660972  0.306
1971 Dalal VL, Dreeben AB, Triano A. Temperature dependence of hole velocity in p-GaAs Journal of Applied Physics. 42: 2864-2867. DOI: 10.1063/1.1660641  0.314
1971 Dalal VL. Simple model for internal photoemission Journal of Applied Physics. 42: 2274-2279. DOI: 10.1063/1.1660536  0.342
1969 Dalal VL. Avalanche multiplication in bulk n-Si Applied Physics Letters. 15: 379-381. DOI: 10.1063/1.1652867  0.327
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