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Miltiadis K. Hatalis - Publications

Affiliations: 
Electrical Engineering Lehigh University, Bethlehem, PA, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Mechanical Engineering
Website:
https://engineering.lehigh.edu/faculty/miltiadis-k-hatalis
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94 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Charisoulis T, Reiman C, Frey D, Hatalis M. Current Feedback Compensation Circuit for 2T1C LED Displays: Analysis and Evaluation Ieee Transactions On Circuits and Systems I-Regular Papers. 66: 175-188. DOI: 10.1109/Tcsi.2018.2858846  0.731
2015 Charisoulis T, Frey D, Hatalis MK. Current feedback compensation circuit for 2T1C LED displays: Method Ieee Transactions On Circuits and Systems I: Regular Papers. 62: 2423-2433. DOI: 10.1109/Tcsi.2015.2468999  0.797
2014 Mahmoudabadi F, Chuang T, Kung JH, Hatalis MK. High Performance IGZO TFTs with Modified Etch Stop Structure on Glass Substrates Mrs Proceedings. 1633: 95-100. DOI: 10.1557/Opl.2014.192  0.327
2014 Mahmoudabadi F, Ma X, Hatalis MK, Shah KN, Levendusky TL. Amorphous IGZO TFTs and circuits on conformable aluminum substrates Solid-State Electronics. 101: 57-62. DOI: 10.1016/J.Sse.2014.06.031  0.46
2014 Charisoulis T, Troccoli MN, Frey DR, Hatalis MK. Novel analog feedback current programming architecture compatible with 2-transistor 1-capacitor pixel for active matrix organic light-emitting diode displays Journal of the Society For Information Display. 22: 204-215. DOI: 10.1002/Jsid.240  0.784
2013 Tsormpatzoglou A, Hastas NA, Mahmoudabadi F, Choi N, Hatalis MK, Dimitriadis CA. Characterization of High-Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors by Low-Frequency Noise Measurements Ieee Electron Device Letters. 34: 1403-1405. DOI: 10.1109/Led.2013.2281948  0.595
2013 Tsormpatzoglou A, Hastas NA, Choi N, Mahmoudabadi F, Hatalis MK, Dimitriadis CA. Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors Journal of Applied Physics. 114: 184502. DOI: 10.1063/1.4831665  0.388
2012 Tsormpatzoglou A, Hastas NA, Khan S, Hatalis M, Dimitriadis CA. Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements Ieee Electron Device Letters. 33: 555-557. DOI: 10.1109/Led.2012.2185677  0.595
2012 Choi N, Yoon SY, Kim CD, Hatalis M. Interface diffusion characteristics of Al-2 at.%Nd/n + a-Si:H and Al-2 at.%Nd/n + poly-Si bilayers Thin Solid Films. 520: 1982-1987. DOI: 10.1016/J.Tsf.2011.08.070  0.522
2012 Choi N, Wee H, Nam S, Lavelle J, Hatalis M. A modified offset roll printing for thin film transistor applications Microelectronic Engineering. 91: 93-97. DOI: 10.1016/J.Mee.2011.11.010  0.578
2011 Ma X, Khan SA, Choi N, Hatalis M, Robinson M. Fe-42%Ni austenitic alloy as a novel substrate for flexible electronics Mrs Proceedings. 1285. DOI: 10.1557/Opl.2011.677  0.589
2011 Khan SA, Ma X, Choi NB, Hatalis M. Amorphous IGZO TFTs and Circuits on Highly Flexible and Dimensionally Stable Kovar (Ni-Fe alloy) Metal Foils Mrs Proceedings. 1287. DOI: 10.1557/Opl.2011.1436  0.503
2011 Choi N, Khan SA, Ma X, Hatalis M. Amorphous Oxide Thin Film Transistors with Methyl Siloxane Based Gate Dielectric on Paper Substrate Electrochemical and Solid State Letters. 14. DOI: 10.1149/1.3570612  0.594
2011 Jamshidi-Roudbari A, Khan SA, Hatalis MK. Integrated Full-Bit Shift Register by Low-Temperature Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Electrochemical and Solid State Letters. 14. DOI: 10.1149/1.3551462  0.797
2011 Jamshidi-Roudbari A, Hatalis MK. Voltage noise characteristics of polysilicon P-I-N diodes Ieee Transactions On Electron Devices. 58: 1054-1062. DOI: 10.1109/Ted.2011.2109793  0.776
2011 Theodorou CG, Tsormpatzoglou A, Dimitriadis CA, Khan SA, Hatalis MK, Jomaah J, Ghibaudo G. Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors Ieee Electron Device Letters. 32: 898-900. DOI: 10.1109/Led.2011.2143386  0.556
2010 Jamshidi-Roudbari A, Akbar Khan S, Hatalis MK. High-frequency half-bit shift register with amorphous-oxide TFT Ieee Electron Device Letters. 31: 320-322. DOI: 10.1109/Led.2010.2041181  0.791
2010 Jamshidi-Roudbari A, Kuo PC, Hatalis MK. A flash analog to digital converter on stainless steel foil substrate Solid-State Electronics. 54: 410-416. DOI: 10.1016/J.Sse.2009.10.020  0.801
2009 Kuo P, Jamshidi-Roudbari A, Hatalis M. Effects of Mechanical Strain on Characteristics of Polycrystalline Silicon Thin-Film Transistors Fabricated on Stainless Steel Foil Ieee\/Osa Journal of Display Technology. 5: 202-205. DOI: 10.1109/Jdt.2008.2004860  0.798
2009 Kuo PC, Jamshidi-Roudbari A, Hatalis M. Electrical characteristics and mechanical limitation of polycrystalline silicon thin film transistor on steel foil under strain Journal of Applied Physics. 106. DOI: 10.1063/1.3264839  0.798
2008 Kuo P, Jamshidi-Roudbari A, Hatalis MK. Electrical Response of Polycrystalline Silicon Thin Film Transistor on Steel Foil under Mechanical Strain Mrs Proceedings. 1116. DOI: 10.1557/Proc-1116-I01-05  0.808
2008 Khan SA, Hatalis MK. Metal Oxide-based (ZnO and IZO) Thin Film Transistors and Circuits Mrs Proceedings. 1109. DOI: 10.1557/Proc-1109-B03-38  0.588
2008 Jamshidi-Roudbari A, Kuo PC, Hatalis M. Effects of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators fabricated on stainless steel foil Solid-State Electronics. 52: 1594-1601. DOI: 10.1016/J.Sse.2008.06.032  0.793
2008 Kioseoglou J, Komninou P, Dimitrakopulos GP, Antoniades IP, Hatalis MK, Karakostas T. Crystallization of amorphous silicon thin films: comparison between experimental and computer simulation results Journal of Materials Science. 43: 3976-3981. DOI: 10.1007/S10853-007-2226-1  0.344
2007 Chuang T, Troccoli M, Hatalis M, Voutsas AT. Polysilicon TFT technology on flexible metal foil for AMPLED displays Journal of the Society For Information Display. 15: 455-461. DOI: 10.1889/1.2759550  0.609
2007 Khan S, jamshidi-Roudbari A, Hatalis M. Top-gate ZnO-based TFTs by RF Sputtering Mrs Proceedings. 1035. DOI: 10.1557/Proc-1035-L11-32  0.797
2007 Chuang TK, Troccoli M, Kuo PC, Jamshidi-Roudbari A, Hatalis M, Voutsas AT, Afentakis T. Process technology for high-resolution AM-PLED displays on flexible metal-foil substrates Electrochemical and Solid-State Letters. 10. DOI: 10.1149/1.2742500  0.781
2007 Kuo PC, Jamshidi-Roudbari A, Hatalis M. Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on stainless steel foil Applied Physics Letters. 91. DOI: 10.1063/1.2824812  0.793
2007 Chuang TK, Troccoli M, Kuo PC, Jamshidi-Roudbari A, Hatalis MK, Biaggio I, Voutsas AT. Top-emitting 230 dots/in. active-matrix polymer light-emitting diode displays on flexible metal foil substrates Applied Physics Letters. 90. DOI: 10.1063/1.2722059  0.801
2006 Afentakis T, Hatalis M, Voutsas AT, Hartzell J. Design and fabrication of high-performance polycrystalline silicon thin-film transistor circuits on flexible steel foils Ieee Transactions On Electron Devices. 53: 815-822. DOI: 10.1109/Ted.2006.871174  0.808
2006 Najafov H, Biaggio I, Chuang T, Hatalis MK. Exciton dissociation by a static electric field followed by nanoscale charge transport in PPV polymer films Physical Review B. 73. DOI: 10.1103/Physrevb.73.125202  0.573
2003 Karnik SV, Hatalis MK. Multiple Lateral Polysilicon Diodes as Temperature Sensors for Chemical Microreaction Systems Japanese Journal of Applied Physics. 42: 1200-1205. DOI: 10.1143/Jjap.42.1200  0.782
2003 Afentakis T, Hatalis M, Voutsas T, Hartzell J. Polysilicon TFT AM-OLED on thin flexible metal substrates Proceedings of Spie - the International Society For Optical Engineering. 5004: 187-191. DOI: 10.1117/12.482577  0.798
2003 Afentakis T, Hatalis M, Voutsas T, Hartzell J. High performance polysilicon circuits on thin metal foils Proceedings of Spie - the International Society For Optical Engineering. 5004: 122-126. DOI: 10.1117/12.482574  0.805
2003 Karnik SV, Hatalis MK, Kothare MV. Towards a palladium micro-membrane for the water gas shift reaction: Microfabrication approach and hydrogen purification results Journal of Microelectromechanical Systems. 12: 93-100. DOI: 10.1109/Jmems.2002.807474  0.756
2003 Karnik SV, Hatalis MK. Lateral polysilicon p+-p-n+ and p+-n-n+ diodes Solid-State Electronics. 47: 653-659. DOI: 10.1016/S0038-1101(02)00323-4  0.771
2002 Karnik SV, Hatalis MK, Kothare MV. Palladium based micro-membrane hydrogen gas separator-reactor in a miniature fuel processor for micro fuel cells Materials Research Society Symposium - Proceedings. 687: 243-248. DOI: 10.1557/Proc-687-B7.2  0.739
2002 Howell RS, Hatalis MK. Novel cleaning methodology for steel substrates in microelectronic fabrication Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1433474  0.332
2002 Afentakis T, Hatalis M. A simple analytical model for the dependence of the propagation delay of the polycrystalline silicon CMOS inverter on temperature Solid-State Electronics. 46: 2301-2306. DOI: 10.1016/S0038-1101(02)00237-X  0.771
2002 Afentakis T, Hatalis M. Trade off between polysilicon film quality and thin film transistor operational amplifier DC gain Solid-State Electronics. 46: 1421-1425. DOI: 10.1016/S0038-1101(02)00061-8  0.793
2001 Karnik SV, Alexander S, Bruce W. J, Hatalis MK. Novel multiple lateral polysilicon p+-n-n+ and p+-p-n+ diodes Proceedings of Spie - the International Society For Optical Engineering. 4295: 120-124. DOI: 10.1117/12.424865  0.78
2001 Afentakis T, Hatalis M. Reliability of polysilicon thin film transistors on stainless steel foil substrates Proceedings of Spie - the International Society For Optical Engineering. 4295: 108-110. DOI: 10.1117/12.424863  0.797
2001 Afentakis T, Hatalis M. Modeling and performance of polysilicon thin film transistor circuits on stainless steel foil substrates Proceedings of Spie - the International Society For Optical Engineering. 4295: 95-101. DOI: 10.1117/12.424861  0.795
2001 Stewart M, Howell RS, Pires L, Hatalis MK. Polysilicon TFT technology for active matrix OLED displays Ieee Transactions On Electron Devices. 48: 845-851. DOI: 10.1109/16.918227  0.386
2000 Howell RS, Sarcona G, Saha SK, Hatalis MK. Preparation and stability of low temperature cobalt and nickel silicides on thin polysilicon films Journal of Vacuum Science and Technology. 18: 87-93. DOI: 10.1116/1.582123  0.421
2000 Howell RS, Stewart M, Karnik SV, Saha SK, Hatalis MK. Poly-Si thin-film transistors on steel substrates Ieee Electron Device Letters. 21: 70-72. DOI: 10.1109/55.821670  0.811
2000 Nkansah F, Hatalis M, Olasupo K. Characterization and modeling of fast programming bits in flash EEPROM Solid-State Electronics. 44: 1887-1897. DOI: 10.1016/S0038-1101(00)00183-0  0.331
2000 Stewart M, Hatalis MK. High performance gated lateral polysilicon PIN diodes Solid-State Electronics. 44: 1613-1619. DOI: 10.1016/S0038-1101(00)00110-6  0.432
1999 Saha SK, Howell RS, Hatalis MK. Reaction Mechanisms in Aluminum‐Indium Tin Oxide Ohmic Contact Metallization with Co and Ni Barrier Layers for Active‐Matrix‐Display Applications Journal of the Electrochemical Society. 146: 3134-3138. DOI: 10.1149/1.1392444  0.31
1999 Sarcona G, Saha SK, Hatalis MK. Nickel Silicides Grown On Amorphous Silicon And Silicon-Germanium Thin Films Electrochemical and Solid State Letters. 1: 233-234. DOI: 10.1149/1.1390696  0.403
1999 Hatalis MK, Stewart MJ, Howell RS, Pires L, Howard WE, Prache O. VGA active-matrix OLED displays having the single polysilicon TFT pixel structure Electronic Imaging. 3636: 22-31. DOI: 10.1117/12.344648  0.332
1999 Sarcona GT, Stewart M, Hatalis MK. Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts Ieee Electron Device Letters. 20: 332-334. DOI: 10.1109/55.772367  0.424
1999 Saha SK, Howell RS, Hatalis MK. Silicidation reactions with Co–Ni bilayers for low thermal budget microelectronic applications Thin Solid Films. 347: 278-283. DOI: 10.1016/S0040-6090(99)00013-9  0.363
1999 Hatalis MK, Kouvatsos DN, Kung JH, Voutsas AT, Kanicki J. Thin film transistors in low temperature as-deposited and reduced-crystallization-time polysilicon on 665°C strain point glass substrates Thin Solid Films. 338: 281-285. DOI: 10.1016/S0040-6090(98)01075-X  0.417
1999 Kouvatsos DN, Voutsas AT, Hatalis MK. Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates Journal of Electronic Materials. 28: 19-25. DOI: 10.1007/S11664-999-0189-5  0.428
1998 Howell RS, Saha SK, Hatalis MK. Cobalt and Nickel for Improved Aluminum-Indium Tin Oxide Contact Metallurgy in Polysilicon TFT Display Applications Mrs Proceedings. 508: 321. DOI: 10.1557/Proc-508-321  0.319
1998 Hatalis MK, Stewart MJ, Howell RS. Advanced polysilicon TFT technology for active matrix organic light-emitting diode displays Proceedings of Spie. 3363: 278-287. DOI: 10.1117/12.321781  0.447
1997 Howell RS, Kaluri SR, Hatalis MK, Hess DW. Polysilicon TFTs for AMLCD applications with gate oxides grown in a low-temperature N2O plasma Electronic Imaging. 3014: 170-175. DOI: 10.1117/12.270293  0.329
1997 Howell RS, Stewart MJ, Sarcona G, Hatalis MK. Silicides for polysilicon TFT-LCD applications Proceedings of Spie - the International Society For Optical Engineering. 3014: 141-146. DOI: 10.1117/12.270289  0.407
1996 Sarcona GT, Hatalis MK. Polysilicon Thin Film Transistors with Cobalt amd Nickel Silicide Source and Drain Contacts Mrs Proceedings. 424: 159. DOI: 10.1557/Proc-424-159  0.426
1996 Kouvatsos DN, Hatalis MK. Polycrystalline silicon thin film transistors fabricated at reduced thermal budgets by utilizing fluorinated gate oxidation Ieee Transactions On Electron Devices. 43: 1448-1453. DOI: 10.1109/16.535331  0.423
1996 Kouvatsos DN, Voutsas AT, Hatalis MK. High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane Ieee Transactions On Electron Devices. 43: 1399-1406. DOI: 10.1109/16.535325  0.435
1996 Olasupo K, Yarbrough W, Hatalis M. The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors Ieee Transactions On Electron Devices. 43: 1306-1308. DOI: 10.1109/16.506785  0.35
1996 Olasupo KR, Hatalis MK. Leakage current mechanism in sub-micron polysilicon thin-film transistors Ieee Transactions On Electron Devices. 43: 1218-1223. DOI: 10.1109/16.506772  0.42
1996 Kouvatsos DN, Tsoukalas D, Sarcona GT, Hatalis MK, Stoemenos J. Single crystal silicon thin film transistors fabricated at low process temperatures on glass substrates Electronics Letters. 32: 775-777. DOI: 10.1049/El:19960474  0.438
1995 Sarcona GT, Hatalis MK. Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications Mrs Proceedings. 402: 191. DOI: 10.1557/Proc-402-191  0.435
1995 Voutsas AT, Hatalis MK, Boyce J, Chiang A. Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low‐pressure chemical vapor deposition Journal of Applied Physics. 78: 6999-7006. DOI: 10.1063/1.360468  0.374
1994 Voutsas AT, Hatalis MK, Olasupo KR, Nanda AK, Alugbin D. Rapid Thermal Crystallization Of LPCVD Amorphous Silicon Films Mrs Proceedings. 345: 93. DOI: 10.1557/Proc-345-93  0.387
1994 Olasupo KR, Hatalis MK. Characteristics of Sub-micron Polysilicon Thin Film Transistors Mrs Proceedings. 345: 129. DOI: 10.1557/Proc-345-129  0.392
1994 Voutsas AT, Hatalis MK. Experimental And Theoretical Study Of The Crystallization Of Chemical-Vapor-Deposited Mixed-Phase Silicon Films Journal of Applied Physics. 76: 777-790. DOI: 10.1063/1.357781  0.368
1994 Lin F, Sarcona G, Hatalis MK, Cserhati AF, Austin E, Greve DW. Characterization of cobalt annealed on silicon-germanium epilayers Thin Solid Films. 250: 20-25. DOI: 10.1016/0040-6090(94)90158-9  0.388
1994 Voutsas AT, Hatalis MK. Structural characteristics of As-deposited and crystallized mixed-phase silicon films Journal of Electronic Materials. 23: 319-330. DOI: 10.1007/Bf02670642  0.38
1993 Voutsas AT, Hatalis MK. Nucleation and Grain Growth in Silicon Films Deposited by Thermal Decomposition of Disilane Materials Science Forum. 431-434. DOI: 10.4028/Www.Scientific.Net/Msf.126-128.431  0.356
1993 Sarcona G, Hatalis MK, Catalano A. Amorphous Silicon and Silicon-Germanium Thin-Film Transistors Formed by Ion Implantation Mrs Proceedings. 297: 907. DOI: 10.1557/Proc-297-907  0.355
1993 Waechter D, Westcott MR, Lin F, Hatalis MK. Properties of Cadmium Selenide Thin Films as a Function of Lateral Distance from Chromium Contacts Journal of the Electrochemical Society. 140: 2994-2998. DOI: 10.1149/1.2220945  0.385
1993 Voutsas AT, Hatalis MK. Deposition and Crystallization of a‐Si Low Pressure Chemically Vapor Deposited Films Obtained by Low‐Temperature Pyrolysis of Disilane Journal of the Electrochemical Society. 140: 871-877. DOI: 10.1149/1.2056177  0.355
1993 Voutsas AT, Hatalis MK. Surface Treatment Effect on the Grain Size and Surface Roughness of as‐Deposited LPCVD Polysilicon Films Journal of the Electrochemical Society. 140: 282-288. DOI: 10.1149/1.2056103  0.353
1993 Voutsas AT, Hatalis MK. Crystallized mixed‐phase silicon films for thin film transistors on glass substrates Applied Physics Letters. 63: 1546-1548. DOI: 10.1063/1.110744  0.431
1992 Kouvatsos DN, Kung J, Hatalis MK, Jaccodine RJ. Fluorinated Gate Oxide Films Utilized in Polysilicon Thin Film Transistors Mrs Proceedings. 284: 437. DOI: 10.1557/Proc-284-437  0.451
1992 Kung J, Hatalis MK, Kanicki J. Performance of Polycrystalline Silicon Thin Film Transistors with Double Layer Gate Dielectric Mrs Proceedings. 284. DOI: 10.1557/Proc-284-431  0.444
1992 Sarcona G, Lin F, Hatalis MK, Cserhati AF, Austin E, Greve DW. Electrical and Structural Properties of Cobalt Annealed on Silicon-Germanium Epilayers Mrs Proceedings. 281. DOI: 10.1557/Proc-281-647  0.302
1992 Lin F, Hatalis MK. Crystallization of Tin-Implanted Amorphous Silicon Thin Films Mrs Proceedings. 279: 553. DOI: 10.1557/Proc-279-553  0.339
1992 Lin F, Hatalis MK, Girginoudi S, Girginoudi D, Georgoulas N, Thanailakis A. Nucleation and Crystallization of Amorphous Silicon-Aluminum Thin Films Mrs Proceedings. 230: 195. DOI: 10.1557/Proc-230-195  0.344
1992 Voutsas AT, Hatalis MK. Structure of As‐Deposited LPCVD Silicon Films at Low Deposition Temperatures and Pressures Journal of the Electrochemical Society. 139: 2659-2665. DOI: 10.1149/1.2221280  0.34
1992 Kouvatsos DN, Hatalis MK, Jaccodine RJ. Fluorine-enhanced oxidation of polycrystalline silicon and application to thin-film transistor fabrication Applied Physics Letters. 61: 937-939. DOI: 10.1063/1.107734  0.408
1992 Kung J, Hatalis MK, Kanicki J. Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors Thin Solid Films. 216: 137-141. DOI: 10.1016/0040-6090(92)90883-D  0.425
1990 Hatalis MK, Kung J, Kanicki J, Bright AA. Effect of Gate Dielectric on Performance of Polysilicon thin Film Transistors Mrs Proceedings. 182. DOI: 10.1557/Proc-182-357  0.448
1989 Hatalis MK, Lin F, Westcott MR. Structural and Electrical Characterization of CdSe Thin Films Mrs Proceedings. 164: 87. DOI: 10.1557/Proc-164-87  0.416
1988 Biay-Cheng-Hseih, Hatalis MK, Greve DW. Low-temperature polycrystalline silicon thin-film transistors for displays Ieee Transactions On Electron Devices. 35: 1842-1845. DOI: 10.1109/16.7395  0.453
1988 Potyraj PA, Chen D-, Hatalis MK, Greve DW. Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors Ieee Transactions On Electron Devices. 35: 1334-1343. DOI: 10.1109/16.2556  0.356
1988 Hatalis MK, Greve DW. Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films Journal of Applied Physics. 63: 2260-2266. DOI: 10.1063/1.341065  0.363
1987 Hatalis MK, Greve DW. Crystallization of Amorphous LPCVD Silicon Films and Application to Bipolar and Thin Film Transistors Mrs Proceedings. 106. DOI: 10.1557/Proc-106-335  0.402
1987 Hatalis MK, Greve DW. Solid Phase Epitaxy of LPCVD Amorphous Silicon Films Journal of the Electrochemical Society. 134: 2536-2540. DOI: 10.1149/1.2100238  0.369
1987 Hatalis MK, Greve DW. High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films Ieee Electron Device Letters. 8: 361-364. DOI: 10.1109/Edl.1987.26660  0.461
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