Eric Kvam - Publications

Affiliations: 
Materials Engineering Purdue University, West Lafayette, IN, United States 
Area:
Materials Science Engineering
Website:
https://engineering.purdue.edu/MSE/people/ptProfile?resource_id=11337

11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2001 Gopal V, Vasiliev AL, Kvam EP. Misfit dislocation introduction during the epitaxial growth of InAs islands on GaP Materials Research Society Symposium - Proceedings. 673. DOI: 10.1557/Proc-673-P4.3  0.471
2001 Lakshmanan A, Gopal V, King AH, Kvam EP. Dislocation arrays in the interfaces between substrates and epitaxial islands Materials Research Society Symposium - Proceedings. 672. DOI: 10.1557/Proc-671-O4.9  0.5
2001 Gopal V, Vasiliev AL, Kvam EP. Strain relaxation and dislocation introduction in lattice-mismatched InAs/GaP heteroepitaxy Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 81: 2481-2501. DOI: 10.1080/01418610110038411  0.319
2000 Gopal V, Kvam EP, Chen EH, Woodall JM. Sequential operation of three distinct misfit dislocation introduction mechanisms in an epitaxial bilayer film Materials Research Society Symposium - Proceedings. 594: 157-162.  0.336
1994 Kvam EP. Interactions of dislocations and antiphase (inversion) domain boundaries in III-V/IV heteroepitaxy Journal of Electronic Materials. 23: 1021-1026. DOI: 10.1007/BF02650370  0.359
1994 Kvam EP, Pavate V, Linehan DS. Dislocations and flux pinning in YBa2Cu3O7 Journal of Electronic Materials. 23: 1183-1189. DOI: 10.1007/BF02649967  0.31
1993 Zanota A, Kvam EP, Balkin D, McGinn PJ. Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy Applied Physics Letters. 62: 2722-2724. DOI: 10.1063/1.109244  0.308
1990 Kvam EP, Maher DM, Humphreys CJ. Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si Journal of Materials Research. 5: 1900-1907. DOI: 10.1557/JMR.1990.1900  0.312
1989 Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Bean JC. Dislocation nucleation near the critical thickness in GeSi/Si strained layers Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 59: 1059-1073. DOI: 10.1080/01418618908209837  0.319
1987 Kvam EP, Balluffi RW. Observations of hierarchical grain-boundary dislocation structures in [001] symmetric tilt boundaries in gold Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 56: 137-148. DOI: 10.1080/01418618708204471  0.513
1987 Kvam EP, Balluffi RW. Observations of localized grain boundary dislocations in series of [001] and [110] symmetrical tilt boundaries in aluminum Scripta Metallurgica. 21: 1573-1575. DOI: 10.1016/0036-9748(87)90303-6  0.496
Show low-probability matches.