Year |
Citation |
Score |
2001 |
Jayanarayanan S, Prins F, Chen X, Banerjee S. Enhanced mobility in 100 nm strained SiGe vertical P-MOSFETs fabricated by UHVCVD Mrs Proceedings. 686: 75-79. DOI: 10.1557/Proc-686-A2.8 |
0.752 |
|
2001 |
Kim DW, Kim YH, Chen X, Lee CH, Song SC, Prins FE, Kwong DL, Banerjee SK. Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition Journal of Vacuum Science & Technology B. 19: 1104-1108. DOI: 10.1116/1.1387453 |
0.498 |
|
2001 |
Chen X, Liu KC, Ouyang QC, Jayanarayanan SK, Banerjee SK. Hole and electron mobility enhancement in strained SiGe vertical MOSFETs Ieee Transactions On Electron Devices. 48: 1975-1980. DOI: 10.1109/16.944185 |
0.797 |
|
2001 |
Ouyang QC, Chen X, Tasch Al.F. J, Register LF, Banerjee SK. Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs Ieee Transactions On Electron Devices. 48: 1245-1249. DOI: 10.1109/16.925255 |
0.755 |
|
2001 |
Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 3334-3336. DOI: 10.1063/1.1375004 |
0.801 |
|
2001 |
Chen X, Liu KC, Jayanarayanan SK, Banerjee S. Electron mobility enhancement in strained SiGe vertical n-type metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 377-379. DOI: 10.1063/1.1342038 |
0.807 |
|
2001 |
Chen X, Liu KC, Ray S, Banerjee SK. Bandgap engineering in vertical P-MOSFETs Solid-State Electronics. 45: 1939-1943. DOI: 10.1016/S0038-1101(01)00237-4 |
0.716 |
|
2001 |
Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Asymmetric Si/Si1-xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor Solid-State Electronics. 45: 281-285. DOI: 10.1016/S0038-1101(01)00013-2 |
0.831 |
|
2001 |
Chen X. Theory of the switching response of CBMOST Chinese Journal of Electronics. 10: 5-6. |
0.322 |
|
2000 |
Chen X, Wang X, Liu K, Kim D, Banerjee S. Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets Mrs Proceedings. 618: 219-224. DOI: 10.1557/Proc-618-219 |
0.654 |
|
2000 |
Chen X, Wang XD, Liu KC, Kim DW, Banerjee SK. Scanning tunneling spectroscopy investigation of the strained Si1-xGex band structure Journal of Materials Research. 15: 1257-1260. DOI: 10.1557/Jmr.2000.0183 |
0.569 |
|
2000 |
Ouyang Q, Chen X, Mudanai SP, Wang X, Kencke DL, Tasch AF, Register LF, Banerjee SK. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current Ieee Transactions On Electron Devices. 47: 1943-1949. DOI: 10.1109/16.870577 |
0.735 |
|
2000 |
Chen X, Ouyang Q, Onsongo DM, Jayanarayanan SK, Tasch A, Banerjee SK. SiGe heterojunction vertical p-type metal–oxide–semiconductor field-effect transistors with Si cap Applied Physics Letters. 77: 1656-1658. DOI: 10.1063/1.1309018 |
0.806 |
|
2000 |
Shi Z, Chen X, Onsongo D, Quinones EJ, Banerjee SK. Simulation and optimization of strained Si1-xGex buried channel p-MOSFETs Solid-State Electronics. 44: 1223-1228. DOI: 10.1016/S0038-1101(00)00031-9 |
0.782 |
|
Show low-probability matches. |