| Year |
Citation |
Score |
| 2020 |
Asel TJ, Steinbrunner E, Hendricks J, Neal AT, Mou S. Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology. 38: 43403. DOI: 10.1116/6.0000086 |
0.325 |
|
| 2020 |
Chamlagain B, Bhanu U, Mou S, Khondaker SI. Tailoring the Potential Landscape and Electrical Properties of 2D MoS2 Using Gold Nanostructures of Different Coverage Density Journal of Physical Chemistry C. 124: 6461-6466. DOI: 10.1021/Acs.Jpcc.0C00066 |
0.353 |
|
| 2019 |
Lin YY, Neal AT, Mou S, Li JV. Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 41204. DOI: 10.1116/1.5109088 |
0.328 |
|
| 2019 |
Abeysinghe DC, Nader N, Myers J, Hendrickson JR, Cleary JW, Walker DE, Chen K, Liu Y, Mou S. Edge Doping Effect to the Surface Plasmon Resonances in Graphene Nanoribbons The Journal of Physical Chemistry C. 123: 19820-19827. DOI: 10.1021/Acs.Jpcc.9B03635 |
0.319 |
|
| 2019 |
Paul S, Gulyas I, Repins IL, Mou S, Li JV. Carrier transport properties in a thin-film Cu2ZnSnSe4 solar cell Thin Solid Films. 675: 103-108. DOI: 10.1016/J.Tsf.2019.01.052 |
0.318 |
|
| 2018 |
Jiang J, Pachter R, Mou S. Tunability in the optical response of defective monolayer WSe by computational analysis. Nanoscale. PMID 29993082 DOI: 10.1039/C8Nr02906G |
0.327 |
|
| 2018 |
Huang SS, Lopez R, Paul S, Neal AT, Mou S, Houng MP, Li JV. β-Ga2O3 defect study by steady-state capacitance spectroscopy Japanese Journal of Applied Physics. 57: 91101. DOI: 10.7567/Jjap.57.091101 |
0.327 |
|
| 2018 |
Goldsmith JH, Gibson R, Cooper T, Asel TJ, Mou S, Look DC, Derov JS, Hendrickson JR. Influence of nitride buffer layers on superconducting properties of niobium nitride Journal of Vacuum Science and Technology. 36: 61502. DOI: 10.1116/1.5044276 |
0.375 |
|
| 2018 |
Ji Z, Myers J, Brockdorf K, Engel N, Mou S, Huang H, Zhuang Y. Microwave imaging of etching-induced surface impedance modulation of graphene monolayer Journal of Vacuum Science and Technology. 36. DOI: 10.1116/1.5035417 |
0.332 |
|
| 2018 |
Neal AT, Mou S, Rafique S, Zhao H, Ahmadi E, Speck JS, Stevens KT, Blevins JD, Thomson DB, Moser N, Chabak KD, Jessen GH. Donors and deep acceptors in β-Ga2O3 Applied Physics Letters. 113: 062101. DOI: 10.1063/1.5034474 |
0.354 |
|
| 2018 |
Zhang Y, Neal A, Xia Z, Joishi C, Johnson JM, Zheng Y, Bajaj S, Brenner M, Dorsey D, Chabak K, Jessen G, Hwang J, Mou S, Heremans JP, Rajan S. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures Applied Physics Letters. 112: 173502. DOI: 10.1063/1.5025704 |
0.368 |
|
| 2018 |
Brockdorf K, Ji Z, Engel N, Myers J, Mou S, Huang H, Zhuang Y. Imaging of edge inactive layer in micro-patterned graphene monolayer Materials Letters. 211: 183-186. DOI: 10.1016/J.Matlet.2017.09.110 |
0.333 |
|
| 2017 |
Neal AT, Mou S, Lopez R, Li JV, Thomson DB, Chabak KD, Jessen GH. Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices. Scientific Reports. 7: 13218. PMID 29038456 DOI: 10.1038/S41598-017-13656-X |
0.354 |
|
| 2017 |
Rafique S, Han L, Mou S, Zhao H. Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire Optical Materials Express. 7: 3561. DOI: 10.1364/Ome.7.003561 |
0.384 |
|
| 2017 |
Moser N, McCandless J, Crespo A, Leedy K, Green A, Neal A, Mou S, Ahmadi E, Speck J, Chabak K, Peixoto N, Jessen G. Ge-Doped ${\beta }$ -Ga2O3 MOSFETs Ieee Electron Device Letters. 38: 775-778. DOI: 10.1109/Led.2017.2697359 |
0.337 |
|
| 2017 |
Mitchel WC, Elhamri S, Haugan HJ, Brown GJ, Mou S, Szmulowicz F. Shubnikov–de Haas Effect in InGaSb/InAs superlattices Journal of Applied Physics. 122: 185106. DOI: 10.1063/1.5010293 |
0.366 |
|
| 2017 |
Neal AT, Pachter R, Mou S. P-type conduction in two-dimensional MoS2 via oxygen incorporation Applied Physics Letters. 110: 193103. DOI: 10.1063/1.4983092 |
0.375 |
|
| 2016 |
Clark G, Schaibley JR, Ross JS, Taniguchi T, Watanabe K, Hendrickson JR, Mou S, Yao W, Xu X. Single Defect Light Emitting Diode in a van der Waals Heterostructure. Nano Letters. PMID 27213921 DOI: 10.1021/Acs.Nanolett.6B01580 |
0.393 |
|
| 2016 |
Akdim B, Pachter R, Mou S. Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS2. Nanotechnology. 27: 185701. PMID 26999310 DOI: 10.1088/0957-4484/27/18/185701 |
0.354 |
|
| 2016 |
Mitchel WC, Elhamri S, Haugan HJ, Brown GJ, Mou S, Szmulowicz F. Multicarrier transport in InGaSb/InAs superlattice structures Journal of Applied Physics. 120: 175701. DOI: 10.1063/1.4966136 |
0.323 |
|
| 2016 |
Rafique S, Han L, Neal AT, Mou S, Tadjer MJ, French RH, Zhao H. Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition Applied Physics Letters. 109. DOI: 10.1063/1.4963820 |
0.385 |
|
| 2016 |
Myers J, Mou S, Chen KH, Zhuang Y. Scanning microwave microscope imaging of micro-patterned monolayer graphene grown by chemical vapor deposition Applied Physics Letters. 108. DOI: 10.1063/1.4940991 |
0.336 |
|
| 2016 |
Connelly BC, Steenbergen EH, Smith HE, Elhamri S, Mitchel WC, Mou S, Metcalfe GD, Brown GJ, Wraback M. Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density Physica Status Solidi (B) Basic Research. 253: 630-634. DOI: 10.1002/Pssb.201552497 |
0.388 |
|
| 2015 |
Mitchel WC, Elhamri S, Haugan HJ, Berney R, Mou S, Brown GJ. Electrical isolation of typeII InAs/InGaSb superlattices from GaSb substrates Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2080847 |
0.416 |
|
| 2015 |
Mitchel WC, Elhamri S, Haugan HJ, Berney R, Mou S, Brown GJ. Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors Aip Advances. 5. DOI: 10.1063/1.4932208 |
0.458 |
|
| 2015 |
Williams AD, Ouchen F, Kim SS, Ngo YH, Elhamri S, Siwecki A, Mou S, Campo EM, Kozlowski G, Naik RR, Grote J. Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric Journal of Electronic Materials. 44: 3481-3485. DOI: 10.1007/S11664-015-3797-2 |
0.34 |
|
| 2014 |
Williams AD, Ouchen F, Kim S, Ngo YH, Elhamri S, Mou S, Kozlowski G, Naik RR, Grote JG. Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor Proceedings of Spie - the International Society For Optical Engineering. 9171. DOI: 10.1117/12.2063170 |
0.306 |
|
| 2014 |
Steenbergen EH, Elhamri S, Mitchel WC, Mou S, Brown GJ. Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices Applied Physics Letters. 104. DOI: 10.1063/1.4861159 |
0.412 |
|
| 2014 |
Gong M, Yang Z, Xu X, Jasion D, Mou S, Zhang H, Long Y, Ren S. Superhydrophobicity of hierarchical ZnO nanowire coatings Journal of Materials Chemistry A. 2: 6180-6184. DOI: 10.1039/C3Ta14102K |
0.315 |
|
| 2013 |
Hopkins FK, Walsh KM, Benken A, Jones J, Averett K, Diggs DE, Tan LS, Mou S, Grote JG. Germanium on silicon to enable integrated photonic circuits Proceedings of Spie - the International Society For Optical Engineering. 8876. DOI: 10.1117/12.2025186 |
0.316 |
|
| 2012 |
Qiao PF, Mou S, Chuang SL. Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect. Optics Express. 20: 2319-34. PMID 22330471 DOI: 10.1364/Oe.20.002319 |
0.71 |
|
| 2012 |
Mou S, Kim SS, Chen KH, Chen LC, Naik RR, Brown GJ, Mitchel WC. Infrared transmission spectroscopy of CVD graphene on Si Proceedings of Spie - the International Society For Optical Engineering. 8462. DOI: 10.1117/12.930246 |
0.385 |
|
| 2011 |
Mitchel WC, Park JH, Smith HE, Grazulis L, Mou S, Tomich D, Eyink K, Elhamri S. Graphene growth on SiC and other substrates using carbon sources Materials Research Society Symposium Proceedings. 1284: 3-10. DOI: 10.1557/Opl.2011.638 |
0.359 |
|
| 2011 |
Park J, Mitchel WC, Brown GJ, Elhamri S, Grazulis L, Smith HE, Pacley SD, Boeckl JJ, Eyink KG, Mou S, Tomich DH, Hoelscher JE. Band gap formation in graphene by in-situ doping Applied Physics Letters. 98. DOI: 10.1063/1.3589364 |
0.365 |
|
| 2009 |
Mou S, Li JV, Chuang SL. Quantum efficiency analysis of InAs-GaSb type-II superlattice photodiodes Ieee Journal of Quantum Electronics. 45: 737-743. DOI: 10.1109/Jqe.2009.2013149 |
0.565 |
|
| 2008 |
Li JV, Hill CJ, Mumolo J, Gunapala S, Mou S, Chuang SL. Midinfrared type-II InAsGaSb superlattice photodiodes toward room temperature operation Applied Physics Letters. 93. DOI: 10.1063/1.2949744 |
0.543 |
|
| 2008 |
Mou S, Petschke A, Lou Q, Chuang SL, Li JV, Hill CJ. Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors Applied Physics Letters. 92. DOI: 10.1063/1.2909538 |
0.674 |
|
| 2007 |
Mou S, Li JV, Chuang SL. Surface channel current in InAsGaSb type-II superlattice photodiodes Journal of Applied Physics. 102. DOI: 10.1063/1.2783767 |
0.494 |
|
| 2007 |
Zhang XB, Ryou JH, Dupuis RD, Xu C, Mou S, Petschke A, Hsieh KC, Chuang SL. Improved surface and structural properties of InAs/GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces Applied Physics Letters. 90. DOI: 10.1063/1.2717524 |
0.693 |
|
| 2006 |
Zhang XB, Ryou JH, Dupuis RD, Petschke A, Mou S, Chuang SL, Xu C, Hsieh KC. Metalorganic chemical vapor deposition growth of high-quality InAsGaSb type II superlattices on (001) GaAs substrates Applied Physics Letters. 88. DOI: 10.1063/1.2168668 |
0.696 |
|
| 2006 |
Zhang XB, Ryou JH, Dupuis RD, Mou S, Chuang SL, Xu C, Hsieh KC. Metal organic chemical vapor deposition of metaphorphic InAs-GaSb superlattices on (0 0 1) GaAs substrates for mid-IR photodetector applications Journal of Crystal Growth. 287: 545-549. DOI: 10.1016/J.Jcrysgro.2005.10.025 |
0.596 |
|
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