| Year |
Citation |
Score |
| 2020 |
Aidarkhanov D, Ren Z, Lim C, Yelzhanova Z, Nigmetova G, Taltanova G, Baptayev B, Liu F, Cheung SH, Balanay M, Baumuratov A, Djurišić AB, So SK, Surya C, Prasad PN, et al. Passivation engineering for hysteresis-free mixed perovskite solar cells Solar Energy Materials and Solar Cells. 215: 110648. DOI: 10.1016/J.Solmat.2020.110648 |
0.416 |
|
| 2018 |
Ren Z, Zhou J, Zhang Y, Ng A, Shen Q, Cheung SH, Shen H, Li K, Zheng Z, So SK, Djurišić AB, Surya C. Strategies for high performance perovskite/crystalline silicon four-terminal tandem solar cells Solar Energy Materials and Solar Cells. 179: 36-44. DOI: 10.1016/J.Solmat.2018.01.004 |
0.403 |
|
| 2018 |
Senthilraja A, Krishnakumar B, Hariharan R, Sobral AJ, Surya C, John NAA, Shanthi M. Synthesis and characterization of bimetallic nanocomposite and its photocatalytic, antifungal and antibacterial activity Separation and Purification Technology. 202: 373-384. DOI: 10.1016/J.Seppur.2018.04.015 |
0.335 |
|
| 2018 |
Zhou J, Ren Z, Li S, Liang Z, Surya C, Shen H. Semi-transparent Cl-doped perovskite solar cells with graphene electrodes for tandem application Materials Letters. 220: 82-85. DOI: 10.1016/J.Matlet.2018.02.106 |
0.361 |
|
| 2018 |
Chen W, Wu Y, Fan J, Djurišić AB, Liu F, Tam HW, Ng A, Surya C, Chan WK, Wang D, He Z. Perovskite Solar Cells: Understanding the Doping Effect on NiO: Toward High-Performance Inverted Perovskite Solar Cells (Adv. Energy Mater. 19/2018) Advanced Energy Materials. 8: 1870091. DOI: 10.1002/Aenm.201870091 |
0.304 |
|
| 2018 |
Chen W, Wu Y, Fan J, Djurišić AB, Liu F, Tam HW, Ng A, Surya C, Chan WK, Wang D, He Z. Understanding the Doping Effect on NiO: Toward High-Performance Inverted Perovskite Solar Cells Advanced Energy Materials. 8: 1703519. DOI: 10.1002/Aenm.201703519 |
0.337 |
|
| 2017 |
Shen Q, Ng A, Ren Z, Gokkaya HC, Djurisic AB, Zapien JA, Surya C. Characterization of Low-frequency Excess Noise in CH3NH3PbI3-based Solar Cells Grown by Solution and Hybrid Chemical Vapor Deposition Techniques. Acs Applied Materials & Interfaces. PMID 29094597 DOI: 10.1021/Acsami.7B10091 |
0.447 |
|
| 2017 |
Liu S, Lin S, You P, Surya C, Lau SP, Yan F. Black phosphorus quantum dots for boosting light harvesting in organic photovoltaics. Angewandte Chemie (International Ed. in English). PMID 28892229 DOI: 10.1002/Anie.201707510 |
0.331 |
|
| 2017 |
Wang SF, Wang W, Fong WK, Yu Y, Surya C. Tin Compensation for the SnS Based Optoelectronic Devices. Scientific Reports. 7: 39704. PMID 28045033 DOI: 10.1038/Srep39704 |
0.448 |
|
| 2017 |
Wong MK, Liu F, Kam CS, Leung TL, Tam HW, Djurišić AB, Popović J, Li H, Shih K, Low K, Chan WK, Chen W, He Z, Ng A, Surya C. Synthesis of Lead-Free Perovskite Films by Combinatorial Evaporation: Fast Processes for Screening Different Precursor Combinations Chemistry of Materials. 29: 9946-9953. DOI: 10.1021/Acs.Chemmater.7B03293 |
0.36 |
|
| 2017 |
Djurišić A, Liu F, Tam H, Wong M, Ng A, Surya C, Chen W, He Z. Perovskite solar cells - An overview of critical issues Progress in Quantum Electronics. 53: 1-37. DOI: 10.1016/J.Pquantelec.2017.05.002 |
0.382 |
|
| 2017 |
Zhang Y, Wu Z, Li P, Ono LK, Qi Y, Zhou J, Shen H, Surya C, Zheng Z. Fully Solution-Processed TCO-Free Semitransparent Perovskite Solar Cells for Tandem and Flexible Applications Advanced Energy Materials. 8: 1701569. DOI: 10.1002/Aenm.201701569 |
0.351 |
|
| 2016 |
Ng A, Ren Z, Shen Q, Cheung SH, Gokkaya HC, So SK, Djurišić AB, Wan Y, Wu X, Surya C. Crystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells. Acs Applied Materials & Interfaces. 8: 32805-32814. PMID 27934172 DOI: 10.1021/Acsami.6B07513 |
0.393 |
|
| 2016 |
Yu Y, Fong PW, Wang S, Surya C. Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer. Scientific Reports. 6: 37833. PMID 27897210 DOI: 10.1038/Srep37833 |
0.769 |
|
| 2016 |
Dong Q, Liu F, Wong MK, Tam HW, Djurišić AB, Ng A, Surya C, Chan WK, Ng AM. Encapsulation of Perovskite Solar Cells for High Humidity Conditions. Chemsuschem. PMID 27504719 DOI: 10.1002/Cssc.201600868 |
0.366 |
|
| 2016 |
Zhou F, Ren Z, Zhao Y, Shen X, Wang A, Li YY, Surya C, Chai Y. Perovskite Photovoltachromic Supercapacitor with All Transparent Electrodes. Acs Nano. PMID 27159013 DOI: 10.1021/Acsnano.6B01202 |
0.324 |
|
| 2016 |
Wong MK, Dong Q, Liu F, Djurišić AB, Chan WK, Li H, Shih K, Ng A, Surya C. Encapsulated perovskite based photovoltaics devices with high stability Mrs Advances. 1: 3191-3198. DOI: 10.1557/Adv.2016.285 |
0.383 |
|
| 2016 |
Dong Q, Liu F, Wong MK, Djurišić AB, Ren Z, Shen Q, Ng A, Surya C, Chan WK. In2O3 based perovskite solar cells Proceedings of Spie - the International Society For Optical Engineering. 9749. DOI: 10.1117/12.2212130 |
0.368 |
|
| 2016 |
Subash B, Krishnakumar B, Sobral AJFN, Surya C, John NAA, Senthilraja A, Swaminathan M, Shanthi M. Synthesis, characterization and daylight active photocatalyst with antiphotocorrosive property for detoxification of azo dyes Separation and Purification Technology. 164: 170-181. DOI: 10.1016/J.Seppur.2016.03.029 |
0.313 |
|
| 2016 |
Djurišić AB, Liu F, Ng AMC, Dong Q, Wong MK, Ng A, Surya C. Stability issues of the next generation solar cells Physica Status Solidi - Rapid Research Letters. 10: 281-299. DOI: 10.1002/Pssr.201600012 |
0.338 |
|
| 2016 |
Liu F, Dong Q, Wong MK, Djurišić AB, Ng A, Ren Z, Shen Q, Surya C, Chan WK, Wang J, Ng AMC, Liao C, Li H, Shih K, Wei C, et al. Is Excess PbI2 Beneficial for Perovskite Solar Cell Performance? Advanced Energy Materials. DOI: 10.1002/Aenm.201502206 |
0.38 |
|
| 2016 |
Lin S, Liu S, Yang Z, Li Y, Ng TW, Xu Z, Bao Q, Hao J, Lee CS, Surya C, Yan F, Lau SP. Solution-Processable Ultrathin Black Phosphorus as an Effective Electron Transport Layer in Organic Photovoltaics Advanced Functional Materials. 26: 864-871. DOI: 10.1002/Adfm.201503273 |
0.382 |
|
| 2015 |
To CH, Ng A, Dong Q, Djuriši? AB, Zapien JA, Chan WK, Surya C. Effect of PTB7 Properties on the Performance of PTB7:PC71BM Solar Cells. Acs Applied Materials & Interfaces. 7: 13198-207. PMID 26039900 DOI: 10.1021/Am5085034 |
0.343 |
|
| 2015 |
Qian S, Ng A, Ren Z, Surya C. Characterization of low-frequency excess noise in perovskite-based photovoltaic cells 2015 International Conference On Noise and Fluctuations, Icnf 2015. DOI: 10.1109/ICNF.2015.7288579 |
0.302 |
|
| 2015 |
Liu S, You P, Li J, Lee CS, Ong BS, Surya C, Yan F. Enhanced efficiency of polymer solar cells by adding a high-mobility conjugated polymer Energy and Environmental Science. 8: 1463-1470. DOI: 10.1039/C5Ee00090D |
0.332 |
|
| 2015 |
Ng A, Ren Z, Shen Q, Cheung SH, Gokkaya HC, Bai G, Wang J, Yang L, So SK, Djuriši? AB, Leung WWF, Hao J, Chan WK, Surya C. Efficiency enhancement by defect engineering in perovskite photovoltaic cells prepared using evaporated PbI2/CH3NH3I multilayers Journal of Materials Chemistry A. 3: 9223-9231. DOI: 10.1039/C4Ta05070C |
0.451 |
|
| 2015 |
Jim WY, Liu X, Yiu WK, Leung YH, Djurišić AB, Chan WK, Liao C, Shih K, Surya C. The effect of different dopants on the performance of SnO2-based dye-sensitized solar cells Physica Status Solidi (B) Basic Research. 252: 553-557. DOI: 10.1002/Pssb.201451256 |
0.364 |
|
| 2014 |
Ng A, Yiu WK, Foo Y, Shen Q, Bejaoui A, Zhao Y, Gokkaya HC, Djuriši? AB, Zapien JA, Chan WK, Surya C. Enhanced performance of PTB7:PC₇₁BM solar cells via different morphologies of gold nanoparticles. Acs Applied Materials & Interfaces. 6: 20676-84. PMID 25408486 DOI: 10.1021/Am504250W |
0.398 |
|
| 2014 |
Ren Z, Ng A, Shen Q, Gokkaya HC, Wang J, Yang L, Yiu WK, Bai G, Djuriši? AB, Leung WW, Hao J, Chan WK, Surya C. Thermal assisted oxygen annealing for high efficiency planar CH₃NH₃PbI₃ perovskite solar cells. Scientific Reports. 4: 6752. PMID 25341527 DOI: 10.1038/Srep06752 |
0.426 |
|
| 2014 |
Leung YH, Ng AMC, Djurišic AB, Chan WK, Fong PWK, Lui HF, Surya C. Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2042305 |
0.732 |
|
| 2014 |
Liu F, Leung YH, Djurišić AB, Ng AMC, Chan WK, Ng KL, Wong KS, Liao C, Shih K, Surya C. Effect of plasma treatment on native defects and photocatalytic activities of zinc oxide tetrapods Journal of Physical Chemistry C. 118: 22760-22767. DOI: 10.1021/Jp506468R |
0.316 |
|
| 2014 |
Wang SF, Fong WK, Wang W, Surya C. Growth of highly textured SnS on mica using an SnSe buffer layer Thin Solid Films. 564: 206-212. DOI: 10.1016/J.Tsf.2014.06.010 |
0.414 |
|
| 2014 |
Hu F, Chan KC, Yue TM, Surya C. Electrochemical synthesis of transparent nanocrystalline Cu2O films using a reverse potential waveform Thin Solid Films. 550: 17-21. DOI: 10.1016/J.Tsf.2013.10.008 |
0.328 |
|
| 2013 |
Xiang P, Liu M, Yang Y, Chen W, He Z, Leung KK, Surya C, Han X, Wu Z, Liu Y, Zhang B. Improving the quality of GaN on Si(111) substrate with a medium-temperature/high-temperature bilayer AlN buffer Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jb18 |
0.386 |
|
| 2013 |
Wang SF, Fong WK, Wang W, Leung KK, Surya C. Growth of SnS van der waals epitaxies on layered substrates Materials Research Society Symposium Proceedings. 1493: 213-217. DOI: 10.1557/Opl.2013.234 |
0.397 |
|
| 2013 |
Leung KK, Wang W, Shu H, Hui YY, Wang S, Fong PWK, Ding F, Lau SP, Lam CH, Surya C. Theoretical and experimental investigations on the growth of SnS van der Waals epitaxies on graphene buffer layer Crystal Growth and Design. 13: 4755-4759. DOI: 10.1021/Cg400916H |
0.344 |
|
| 2013 |
Chen X, Ng AMC, Djurišić AB, Chan WK, Fong PWK, Lui HF, Surya C, Cheng CCW, Kwok WM. GaN/MgO/ZnO heterojunction light-emitting diodes Thin Solid Films. 527: 303-307. DOI: 10.1016/J.Tsf.2012.12.027 |
0.735 |
|
| 2013 |
Xu CH, You YF, Wang JZ, Ge SF, Fong WK, Leung K, Surya C. Growth behavior of ZnO nanowires on Au-seeded SiO2-GaN co-substrate by vapor transport and deposition Superlattices and Microstructures. 61: 97-105. DOI: 10.1016/J.Spmi.2013.06.015 |
0.445 |
|
| 2012 |
Zhao YQ, Leung KK, Surya C, Feng CK, Chen YF, Chen DM, Shen H, Zhang BJ. Cost effective fabrication of wafer scale nanoholes for solar cells application Materials Research Society Symposium Proceedings. 1323: 81-86. DOI: 10.1557/Opl.2011.1389 |
0.397 |
|
| 2012 |
Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP, Surya C. Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate Conference Record of the Ieee Photovoltaic Specialists Conference. 2614-2616. DOI: 10.1109/PVSC.2012.6318130 |
0.301 |
|
| 2012 |
Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP, Chen Z, Shi LJ, Cao CB, Surya C. Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer Journal of Applied Physics. 111. DOI: 10.1063/1.4709732 |
0.415 |
|
| 2012 |
Xu CH, Leung K, Hu J, Surya C. Synthetics of ZnO nanowires on GaN micro-pyramids by gold catalyst Materials Letters. 74: 100-103. DOI: 10.1016/J.Matlet.2011.11.122 |
0.41 |
|
| 2012 |
Xu CH, Lui HF, Surya C. Optical and sensor properties of ZnO nanostructure grown by thermal oxidation in dry or wet nitrogen Journal of Electroceramics. 28: 27-33. DOI: 10.1007/S10832-011-9674-3 |
0.674 |
|
| 2011 |
Xu CH, Leung K, Surya C. Synthetics of ZnO nanowires on GaN/Sapphire substrate by gold catalyst Advanced Materials Research. 339: 3-6. DOI: 10.4028/Www.Scientific.Net/Amr.339.3 |
0.439 |
|
| 2011 |
Fong WK, Leung KK, Surya C. Characterization of InGaN/GaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique Materials Research Society Symposium Proceedings. 1288: 1-5. DOI: 10.1557/Opl.2011.14 |
0.457 |
|
| 2011 |
Chen X, Ng AMC, Wong KK, Djurišić AB, Fang F, Chan WK, Fong PWK, Lui HF, Surya C. ZnO nanorods for light-emitting diode applications Proceedings of Spie - the International Society For Optical Engineering. 7940. DOI: 10.1117/12.878940 |
0.693 |
|
| 2011 |
Zhao YQ, Leung KK, Chen Y, Surya C, Feng CK, Chen YF, Chen DM, Shen H, Zhang BJ. Silicon nanohole photovoltaic cells Conference Record of the Ieee Photovoltaic Specialists Conference. 000699-000702. DOI: 10.1109/PVSC.2011.6186050 |
0.305 |
|
| 2011 |
Chen X, Man Ching Ng A, Fang F, Hang Ng Y, Djurišić AB, Lam Tam H, Wai Cheah K, Gwo S, Kin Chan W, Wai Keung Fong P, Fei Lui H, Surya C. ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias Journal of Applied Physics. 110. DOI: 10.1063/1.3653835 |
0.447 |
|
| 2011 |
Chen XY, Fang F, Ng AMC, Djurišič AB, Cheah KW, Ling CC, Chan WK, Fong PWK, Lui HF, Surya C. Nitrogen doped-ZnO/n-GaN heterojunctions Journal of Applied Physics. 109. DOI: 10.1063/1.3575178 |
0.696 |
|
| 2011 |
Fong WK, Leung KK, Surya C. Growth and characterization of GaN/InGaN multiple quantum wells on nanoscale epitaxial lateral overgrown layers Crystal Growth and Design. 11: 2091-2097. DOI: 10.1021/Cg101165K |
0.446 |
|
| 2011 |
Chen XY, Fang F, Ng AMC, Djurišić AB, Chan WK, Lui HF, Fong PWK, Surya C, Cheah KW. Effect of doping precursors on the optical properties of Ce-doped ZnO nanorods Thin Solid Films. 520: 1125-1130. DOI: 10.1016/J.Tsf.2011.08.022 |
0.723 |
|
| 2011 |
Zhang ZW, Zhu CF, Fong WK, Leung KK, Chan PKL, Surya C. Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers Solid-State Electronics. 62: 94-98. DOI: 10.1016/J.Sse.2011.02.007 |
0.463 |
|
| 2011 |
Xu CH, Zhu ZB, Lui HF, Surya C, Shi SQ. The effect of oxygen partial pressure on the growth of ZnO nanostructure on Cu0.62Zn0.38 brass during thermal oxidation Superlattices and Microstructures. 49: 408-415. DOI: 10.1016/J.Spmi.2010.12.009 |
0.657 |
|
| 2011 |
Xu CH, Lui HF, Surya C. Synthetics of ZnO nanostructures by thermal oxidation in water vapor containing environments Materials Letters. 65: 27-30. DOI: 10.1016/J.Matlet.2010.09.052 |
0.686 |
|
| 2011 |
Fang F, Ng AMC, Chen XY, Djurišić AB, Zhong YC, Wong KS, Fong PWK, Lui HF, Surya C, Chan WK. Effect of Tm doping on the properties of electrodeposited ZnO nanorods Materials Chemistry and Physics. 125: 813-817. DOI: 10.1016/J.Matchemphys.2010.09.051 |
0.686 |
|
| 2011 |
Fong WK, Leung KK, Surya C. Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique Journal of Crystal Growth. 318: 488-491. DOI: 10.1016/j.jcrysgro.2010.10.048 |
0.336 |
|
| 2010 |
Leung KK, Fong WK, Chan PKL, Surya C. Degradation mechanism of GaN-based LEDs with different growth parameters Materials Research Society Symposium Proceedings. 1195: 207-212. DOI: 10.1557/Proc-1195-B08-06 |
0.405 |
|
| 2010 |
Chen XY, Ng AMC, Fang F, Djurišić AB, Chan WK, Tam HL, Cheah KW, Fong PWK, Lui HF, Surya C. The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3282743 |
0.729 |
|
| 2010 |
Lui HF, Leung KK, Fong WK, Surya C. Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation Conference Record of the Ieee Photovoltaic Specialists Conference. 1977-1981. DOI: 10.1109/PVSC.2010.5616592 |
0.671 |
|
| 2010 |
Kováč J, Jha SK, Jelenković EV, Kutsay O, Pejović M, Surya C, Zapien JA, Bello I, Srnánek R, Flickyngerová S. Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques Conference Proceedings - the 8th International Conference On Advanced Semiconductor Devices and Microsystems, Asdam 2010. 123-126. DOI: 10.1109/ASDAM.2010.5666315 |
0.544 |
|
| 2010 |
Leung KK, Fong WK, Chan PKL, Surya C. Physical mechanisms for hot-electron degradation in GaN light-emitting diodes Journal of Applied Physics. 107. DOI: 10.1063/1.3357312 |
0.424 |
|
| 2010 |
Hu F, Chan KC, Yue TM, Surya C. Dynamic template assisted electrodeposition of porous ZnO thin films using a triangular potential waveform Journal of Physical Chemistry C. 114: 5811-5816. DOI: 10.1021/Jp910691W |
0.341 |
|
| 2010 |
Chan CP, Lam H, Surya C. Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids Solar Energy Materials and Solar Cells. 94: 207-211. DOI: 10.1016/J.Solmat.2009.09.003 |
0.386 |
|
| 2010 |
Ng AMC, Chen XY, Fang F, Hsu YF, Djurišić AB, Ling CC, Tam HL, Cheah KW, Fong PWK, Lui HF, Surya C, Chan WK. Solution-based growth of ZnO nanorods for light-emitting devices: Hydrothermal vs. electrodeposition Applied Physics B: Lasers and Optics. 100: 851-858. DOI: 10.1007/S00340-010-4173-9 |
0.722 |
|
| 2009 |
Ng AM, Xi YY, Hsu YF, Djurisi? AB, Chan WK, Gwo S, Tam HL, Cheah KW, Fong PW, Lui HF, Surya C. GaN/ZnO nanorod light emitting diodes with different emission spectra. Nanotechnology. 20: 445201. PMID 19801783 DOI: 10.1088/0957-4484/20/44/445201 |
0.784 |
|
| 2009 |
Chan CP, Lam H, Leung KK, Surya C. Growth of copper zinc tin sulfide nano-rods by electrodeposition using anodized aluminum as the growth mask Journal of Nonlinear Optical Physics and Materials. 18: 599-603. DOI: 10.1142/S0218863509004804 |
0.403 |
|
| 2009 |
Lui HF, Fong WK, Surya C. Realization of erythemal UV detectors using Ni/GaN schottky junctions Ieee Transactions On Electron Devices. 56: 672-677. DOI: 10.1109/Ted.2009.2014196 |
0.7 |
|
| 2009 |
Lui HF, Fong WK, Surya C. Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors 2009 14th Optoelectronics and Communications Conference, Oecc 2009. DOI: 10.1109/OECC.2009.5218127 |
0.668 |
|
| 2009 |
Pang MY, Lui HF, Li WS, Wong KH, Surya C. Characterizations of bismuth telluride/gallium nitride heterojunction photovoltaic detector for MWIR detection under room temperature Journal of Physics: Conference Series. 152. DOI: 10.1088/1742-6596/152/1/012046 |
0.615 |
|
| 2009 |
Chen Z, Cao C, Li WS, Surya C. Well-aligned single-crystalline gan nanocolumns and their field emission properties Crystal Growth and Design. 9: 792-796. DOI: 10.1021/Cg800321X |
0.44 |
|
| 2009 |
Jha S, Jelenković EV, Pejović MM, Ristić GS, Pejović M, Tong KY, Surya C, Bello I, Zhang WJ. Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays Microelectronic Engineering. 86: 37-40. DOI: 10.1016/J.Mee.2008.09.001 |
0.597 |
|
| 2008 |
Chan C, Lam H, Wong K, Surya C. Electrodeposition of Cu2ZnSnS4 Thin Films Using Ionic Liquids Mrs Proceedings. 1123. DOI: 10.1557/Proc-1123-1123-P05-06 |
0.364 |
|
| 2008 |
Jha SK, Surya C, Chen KJ, Lau KM, Jelencovic E. Low-frequency noise properties of double channel AlGaN/GaN HEMTs Solid-State Electronics. 52: 606-611. DOI: 10.1016/J.Sse.2007.10.002 |
0.577 |
|
| 2008 |
Pang MY, Li WS, Wong KH, Surya C. Electrical and optical properties of bismuth telluride/gallium nitride heterojunction diodes Journal of Non-Crystalline Solids. 354: 4238-4241. DOI: 10.1016/J.Jnoncrysol.2008.06.098 |
0.432 |
|
| 2008 |
Hsu YF, Xi YY, Tam KH, Djurišić AB, Luo J, Ling CC, Cheung CK, Ng AMC, Chan WK, Deng X, Beling CD, Fung S, Cheah KW, Fong PWK, Surya CC. Undoped p-type ZnO nanorods synthesized by a hydrothermal method Advanced Functional Materials. 18: 1020-1030. DOI: 10.1002/Adfm.200701083 |
0.335 |
|
| 2007 |
Yu J, Jha SK, Xiao L, Liu Q, Wang P, Surya C, Yang M. AlGaN/GaN heterostructures for non-invasive cell electrophysiological measurements. Biosensors & Bioelectronics. 23: 513-9. PMID 17766103 DOI: 10.1016/J.Bios.2007.06.014 |
0.55 |
|
| 2007 |
Fong WK, Leung KK, Lui HF, Wai PKA, Surya C, Chen Z, Cao CB. Measurement of flicker noise as a diagnostic tool for hot-electron degradation in GaN-based leds Fluctuation and Noise Letters. 7. DOI: 10.1142/S0219477507004045 |
0.698 |
|
| 2007 |
Jha SK, Zhu CF, Pilkuhn MH, Surya C, Schweizer H. Degradation of low-frequency noise in AlGaN/GaN HEMTS due to hot-electron stressing Fluctuation and Noise Letters. 7: L91-L100. DOI: 10.1142/S0219477507003726 |
0.567 |
|
| 2007 |
Lui HF, Fong WK, Surya C. Low-frequency noise characterizations of GaN-based visible-blind UV detectors fabricated using a double buffer layer structure Proceedings of Spie - the International Society For Optical Engineering. 6600. DOI: 10.1117/12.724978 |
0.691 |
|
| 2007 |
Lui HF, Fong WK, Surya C. Characteristics of MBE-Grown GaN detectors on double buffer layers under high-power ultraviolet optical irradiation Ieee Transactions On Electron Devices. 54: 671-676. DOI: 10.1109/Ted.2007.892361 |
0.702 |
|
| 2007 |
Leung KK, Chan CP, Fong WK, Pilkuhn M, Schweizer H, Surya C. High-resolution X-ray diffraction study of laser lift-off AlGaN/GaN HEMTs grown by MOCVD method Journal of Crystal Growth. 298: 840-842. DOI: 10.1016/J.Jcrysgro.2006.10.112 |
0.314 |
|
| 2007 |
Fong WK, Leung KK, Surya C. Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source Journal of Crystal Growth. 298: 239-242. DOI: 10.1016/J.Jcrysgro.2006.10.024 |
0.37 |
|
| 2007 |
Xu CH, Shi SQ, Surya C, Woo CH. Synthesis of antimony oxide nano-particles by vapor transport and condensation Journal of Materials Science. 42: 9855-9858. DOI: 10.1007/S10853-007-1799-Z |
0.324 |
|
| 2007 |
Chan CP, Leung KK, Pilkuhn M, Surya C, Yue TM, Pang G, Schweizer H. DC characterization of laser-debonded GaN HEMTs Physica Status Solidi (a) Applications and Materials Science. 204: 914-922. DOI: 10.1002/Pssa.200622271 |
0.381 |
|
| 2006 |
Chan CP, Gao J, Yue TM, Surya C, Ng AMC, Djurišić AB, Liu PCK, Li M. Study of laser-debonded GaN LEDs Ieee Transactions On Electron Devices. 53: 2266-2271. DOI: 10.1109/Ted.2006.881008 |
0.398 |
|
| 2006 |
Xu CH, Shi SQ, Man HC, Woo CH, Surya C. Oxidation behavior of the TiNi shape memory alloy with a laser surface melted layer Journal of Materials Science. 41: 1123-1129. DOI: 10.1007/S10853-005-3649-1 |
0.304 |
|
| 2006 |
Lui HF, Fong WK, Surya C, Cheung CH, Djurišić AB. Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2295-2298. DOI: 10.1002/Pssc.200565358 |
0.738 |
|
| 2006 |
Jha SK, Surya C, Chen KJ, Lau KM. Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor Essderc 2006 - Proceedings of the 36th European Solid-State Device Research Conference. 2006: 105-108. |
0.547 |
|
| 2005 |
Chan CP, Yue TM, Surya C, Ng AMC, Djurišić AB, Liu CK, Li M. Study of GaN Light-Emitting Diodes Obtained by Laser-Assisted Debonding Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff12-09 |
0.392 |
|
| 2005 |
Ng AMC, Tong WY, Djurišić AB, Leung YH, Cheung CH, Lui HF, Surya C, Chan WK. Synthesis of Tris(8-hydroxyquinoline) aluminum (Alq3) nanowires under different conditions Proceedings of Spie - the International Society For Optical Engineering. 5937: 1-8. DOI: 10.1117/12.614746 |
0.708 |
|
| 2005 |
Jha SK, Zhu CF, Jelenkovic E, Tong KY, Surya C, Schweizer H, Pilkuhn M. Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress Proceedings of Spie - the International Society For Optical Engineering. 5844: 256-267. DOI: 10.1117/12.609283 |
0.455 |
|
| 2005 |
Jha SK, Leung BH, Surya C, Schweizer H, Pilkhuhn MH. Studies of hot-electron degradation in GaN HEMTs with varying gate recess depths Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 33-36. DOI: 10.1109/COMMAD.2004.1577485 |
0.498 |
|
| 2005 |
Jha S, Gao J, Zhu CF, Jelenkovic E, Tong KY, Pilkuhn M, Surya C, Schweizer H. Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs Aip Conference Proceedings. 780: 295-298. DOI: 10.1063/1.2036753 |
0.496 |
|
| 2005 |
Chan CP, Leung BH, Fong WK, Lai PK, Loke YH, Surya C, Yue TM, Man HC, Xiu X, Zhang R. Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films Applied Surface Science. 252: 1049-1056. DOI: 10.1016/J.Apsusc.2005.01.146 |
0.444 |
|
| 2005 |
Jha SK, Leung BH, Surya CC, Schweizer H, Pilkhuhn MH. Low-frequency noise characterization in AlGaN/GaN HEMTs with varying gate recess depths Materials Research Society Symposium Proceedings. 831: 465-470. |
0.49 |
|
| 2004 |
Chan CP, Leung BH, Loke YH, Man HC, Yue TM, Xiu X, Zhang R, Surya C. Characterizations of low-frequency noise in laser-debonded hvpe-grown GaN thin films Fluctuation and Noise Letters. 4: L437-L445. DOI: 10.1142/S0219477504002026 |
0.456 |
|
| 2004 |
Roy VAL, Djurišić AB, Liu H, Zhang XX, Leung YH, Xie MH, Gao J, Lui HF, Surya C. Magnetic properties of Mn doped ZnO tetrapod structures Applied Physics Letters. 84: 756-758. DOI: 10.1063/1.1645312 |
0.657 |
|
| 2004 |
Djurišić AB, Choy WCH, Roy VAL, Leung YH, Kwong CY, Cheah KW, Rao TKG, Chan WK, Lui HF, Surya C. Photoluminescence and electron paramagnetic resonance of ZnO tetrapod structures Advanced Functional Materials. 14: 856-864. DOI: 10.1002/Adfm.200305082 |
0.686 |
|
| 2003 |
Roy VAL, Djurišić AB, Li Q, Xu SJ, Lui HF, Surya C, Gao J. Simple technique for bulk quantity synthesis of ZnO tetrapod nanorods Proceedings of Spie - the International Society For Optical Engineering. 5219: 51-58. DOI: 10.1117/12.504700 |
0.653 |
|
| 2003 |
Roy VAL, Djurišić AB, Chan WK, Gao J, Lui HF, Surya C. Luminescent and structural properties of ZnO nanorods prepared under different conditions Applied Physics Letters. 83: 141-143. DOI: 10.1063/1.1589184 |
0.683 |
|
| 2003 |
Fong WK, Ng SW, Leung BH, Surya C. Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers Journal of Applied Physics. 94: 387-391. DOI: 10.1063/1.1579843 |
0.448 |
|
| 2003 |
Leung BH, Fong WK, Surya C. Study of low-frequency excess noise in GaN materials Optical Materials. 23: 203-206. DOI: 10.1016/S0925-3467(03)00084-3 |
0.45 |
|
| 2003 |
Ho HP, Lo KC, Siu GG, Surya C, Li KF, Cheah KW. Raman and photoluminescence spectroscopy of free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off Materials Chemistry and Physics. 81: 99-103. DOI: 10.1016/S0254-0584(03)00146-9 |
0.378 |
|
| 2003 |
Leung BH, Fong WK, Surya C. Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices Applied Surface Science. 212: 897-900. DOI: 10.1016/S0169-4332(03)00023-0 |
0.456 |
|
| 2003 |
Zhu CF, Xie JQ, Fong WK, Surya C. Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy Materials Letters. 57: 2413-2416. DOI: 10.1016/S0167-577X(02)01246-6 |
0.446 |
|
| 2003 |
Leung BH, Fong WK, Surya C, Lu LW, Ge WK. Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers Materials Science in Semiconductor Processing. 6: 523-525. DOI: 10.1016/J.Mssp.2003.07.016 |
0.447 |
|
| 2003 |
Fong WK, Leung BH, Surya C, Lu LW, Ge WK. Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers Physica Status Solidi C: Conferences. 2396-2399. DOI: 10.1002/Pssc.200303393 |
0.479 |
|
| 2002 |
Fong WK, Leung BH, Zhu CF, Surya C. Characterization of G-R noise in GaN films grown by RF-MBE on intermediate-temperature buffer layers Materials Research Society Symposium - Proceedings. 693: 183-188. DOI: 10.1557/Proc-693-I3.38.1 |
0.41 |
|
| 2002 |
Leung BH, Chan NH, Fong WK, Zhu CF, Ng SW, Lui HF, Tong KY, Surya C, Lu LW, Ge WK. Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers Ieee Transactions On Electron Devices. 49: 314-318. DOI: 10.1109/16.981223 |
0.723 |
|
| 2002 |
Leung BH, Fong WK, Zhu CF, Surya C. Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy Journal of Applied Physics. 91: 3706-3710. DOI: 10.1063/1.1436288 |
0.431 |
|
| 2002 |
Fong WK, Zhu CF, Leung BH, Surya C, Sundaravel B, Luo EZ, Xu JB, Wilson IH. Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy Microelectronics Reliability. 42: 1179-1184. DOI: 10.1016/S0026-2714(02)00086-0 |
0.393 |
|
| 2002 |
Lu LW, Fong WK, Zhu CF, Leung BH, Surya C, Wang J, Ge W. Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy Journal of Crystal Growth. 234: 99-104. DOI: 10.1016/S0022-0248(01)01664-5 |
0.364 |
|
| 2002 |
Chan MCY, Surya C, Wai PKA. Optical gain of interdiffused GaInNAs/GaAs quantum wells Applied Physics a: Materials Science and Processing. 75: 573-576. DOI: 10.1007/S003390101031 |
0.311 |
|
| 2002 |
Fong WK, Leung BH, Xie JQ, Surya C. Study of low-frequency excess noise transport in Ga-face and N-face GaN thin films grown on intermediate-temperature buffer layer by RF-MBE Physica Status Solidi (a) Applied Research. 192: 466-471. DOI: 10.1002/1521-396X(200208)192:2<466::Aid-Pssa466>3.0.Co;2-2 |
0.433 |
|
| 2001 |
XIE JQ, FONG WK, LEUNG BH, ZHU CF, SURYA C, WONG KH. STUDY OF LOW-FREQUENCY EXCESS NOISE IN Ga-POLARITY GaN EPITAXIAL LAYERS Fluctuation and Noise Letters. 1: R163-R174. DOI: 10.1142/S0219477501000445 |
0.421 |
|
| 2001 |
Leung BH, Fong WK, Zhu CF, Surya C. Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers Ieee Transactions On Electron Devices. 48: 2400-2404. DOI: 10.1109/16.954483 |
0.443 |
|
| 2001 |
Zhu CF, Fong WK, Leung BH, Cheng CC, Surya C. Effects of rapid thermal annealing on the structural properties of GaN thin films Ieee Transactions On Electron Devices. 48: 1225-1230. DOI: 10.1109/16.925252 |
0.411 |
|
| 2001 |
Chan MCY, Surya C, Wai PKA. The effects of interdiffusion on the subbands in GaxIn1-xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths Journal of Applied Physics. 90: 197-201. DOI: 10.1063/1.1370110 |
0.34 |
|
| 2001 |
Wang LS, Fong WK, Surya C, Cheah KW, Zheng WH, Wang ZG. Photoluminescence of rapid-thermal annealed Mg-doped GaN films Solid-State Electronics. 45: 1153-1157. DOI: 10.1016/S0038-1101(01)00043-0 |
0.423 |
|
| 2001 |
Ho WY, Surya C. Study of light-induced annealing effects in a-Si:H thin films Microelectronics and Reliability. 41: 913-917. DOI: 10.1016/S0026-2714(01)00012-9 |
0.346 |
|
| 2001 |
Fong WK, Zhu CF, Leung BH, Surya C. High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer Journal of Crystal Growth. 233: 431-438. DOI: 10.1016/S0022-0248(01)01592-5 |
0.422 |
|
| 2001 |
Zhu CF, Fong WK, Leung BH, Surya C. Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers Applied Physics a: Materials Science and Processing. 72: 495-497. DOI: 10.1007/S003390100797 |
0.444 |
|
| 2001 |
Fong WK, Zhu CF, Leung BH, Surya C. Electrical properties of high quality MBE-grown GaN thin films on intermediate-temperature buffer layers Proceedings of the Ieee Hong Kong Electron Devices Meeting. 153-157. |
0.301 |
|
| 2001 |
Leung BH, Chan NH, Fong WK, Zhu CF, Lui HF, Ng CK, Wong KC, Surya C. Effects of intermediate-temperature buffer layers on low-frequency noise performance of GaN based Schottky barriers Proceedings of the Ieee Hong Kong Electron Devices Meeting. 148-152. |
0.652 |
|
| 2000 |
Fong WK, Zhu CF, Leung BH, Surya C. Growth of high quality GaN thin films by MBE on intermediate-temperature buffer layers Mrs Internet Journal of Nitride Semiconductor Research. 5. DOI: 10.1557/S1092578300000120 |
0.402 |
|
| 2000 |
Zhu CF, Fong WK, Leung BH, Cheng CC, Surya C. Nature of low-frequency excess noise in n-type gallium nitride Materials Research Society Symposium - Proceedings. 622: T6231-T6236. DOI: 10.1557/Proc-622-T6.23.1 |
0.356 |
|
| 2000 |
Zhu CF, Fong WK, Leung BH, Cheng CC, Surya C, Sundaravel B, Luo EZ, Xu JB, Wilson IH. The effect of indium surfactant on the optoelectronic and structural properties of MBE grown gallium nitride Materials Research Society Symposium - Proceedings. 618: 153-158. DOI: 10.1557/Proc-618-153 |
0.352 |
|
| 2000 |
Zhu C, Fong W, Leung B, Cheng C, Surya C, Sundaravel B, Luo E, Xu J, Wilson I. The Effect of Indium Surfactant on the Optoelectronic and Structural Properties of MBE Grown Gallium Nitride Mrs Proceedings. 618. DOI: 10.1557/PROC-618-153 |
0.325 |
|
| 2000 |
Lueng CM, Chan HLW, Surya C, Choy CL. Piezoelectric coefficient of aluminum nitride and gallium nitride Journal of Applied Physics. 88: 5360-5363. DOI: 10.1557/Proc-572-389 |
0.411 |
|
| 2000 |
Ho WY, Surya C, Tong KY, Lu LW, Ge WK. Studies of high DC current induced degradation in III-V nitride based heterojunctions Ieee Transactions On Electron Devices. 47: 1421-1425. DOI: 10.1109/16.848286 |
0.377 |
|
| 2000 |
Sundaravel B, Luo EZ, Xu JB, Wilson IH, Fong WK, Wang LS, Surya C. Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001) Journal of Applied Physics. 87: 955-957. DOI: 10.1063/1.371966 |
0.36 |
|
| 1999 |
Ho WY, Surya C, Tong KY, Kim W, Botcharev AE, Morkoç H. Characterization of flicker noise in ganbased modfet's at low drain bias Ieee Transactions On Electron Devices. 46: 10991104. DOI: 10.1557/S1092578300003057 |
0.377 |
|
| 1999 |
Ho WY, Fong WK, Surya C, Tong KY, Lu LAV, Ge WK. Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions Materials Research Society Symposium - Proceedings. 537. DOI: 10.1557/S1092578300003045 |
0.414 |
|
| 1999 |
Surya C, Zhu CF, Leung BH, Fong WK, Cheng CC, Sin JKO. Study of the effects of rapid thermal annealing in generation-recombination noise in MBE grown GaN thin films Microelectronics Reliability. 40: 1905-1909. DOI: 10.1016/S0026-2714(00)00066-4 |
0.413 |
|
| 1999 |
Lueng CM, Chan HLW, Surya C, Fong WK, Choy CL, Chow P, Rosamond M. Piezoelectric coefficient of GaN measured by laser interferometry Journal of Non-Crystalline Solids. 254: 123-127. DOI: 10.1016/S0022-3093(99)00383-X |
0.39 |
|
| 1999 |
Fleischer S, Surya C, Hu YF, Beling CD, Fung S, Smith TL, Moulding KM, Missous M. A study of the vacancy-defect distribution in a GaAs/AlxGa1-xAs multi-layer structure grown at low temperature Journal of Crystal Growth. 196: 53-61. DOI: 10.1016/S0022-0248(98)00608-3 |
0.399 |
|
| 1999 |
Lueng CM, Chan HLW, Fong WK, Surya C, Choy CL. Piezoelectric coefficients of aluminum nitride and gallium nitride Materials Research Society Symposium - Proceedings. 572: 389-394. |
0.317 |
|
| 1998 |
Surya C, Wang W, Lai PT. Characterization of flicker noise in N2O and NH3 nitrided MOSFETs due to low-energy Ar+ backsurface gettering Semiconductor Science and Technology. 13: 792-795. DOI: 10.1088/0268-1242/13/7/023 |
0.374 |
|
| 1997 |
Ho WY, Surya C. Study of {1}/{f} noise in hydrogenated amorphous silicon thin films Solid-State Electronics. 41: 1247-1249. DOI: 10.1016/S0038-1101(97)00073-7 |
0.386 |
|
| 1996 |
Surya C, Wang W, Fong WK, Chan CH, Lai PT. Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs Solid-State Electronics. 39: 1577-1580. DOI: 10.1016/0038-1101(96)00069-X |
0.369 |
|
| 1995 |
Surya C, Israeloff NE, Widom A, Seed R, Vittoria C. Flicker noise in YBa2Cu3O7-δ bicrystal grain boundary junctions in weak magnetic fields Applied Physics Letters. 67: 1307. DOI: 10.1063/1.114522 |
0.313 |
|
| 1993 |
Ng SH, Surya C, Brown ER, Maki PA. Observation of random-telegraph noise in resonant-tunneling diodes Applied Physics Letters. 62: 2262-2264. DOI: 10.1063/1.109435 |
0.352 |
|
| 1988 |
Surya C, Hsiang TY. A thermal activation model for 1/f{hook}y noise in Si-MOSFETs Solid State Electronics. 31: 959-964. DOI: 10.1016/0038-1101(88)90051-2 |
0.346 |
|
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