Year |
Citation |
Score |
2007 |
Choi W, Zhao W, Bae J, Adesida I, Yu B, Lee YL, Jang J. Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides Japanese Journal of Applied Physics. 46: 2434-2439. DOI: 10.1143/Jjap.46.2434 |
0.541 |
|
2006 |
Choi WS, Jang JH, Yu BA, Lee YL, Zhao W, Bae JW, Adesida I. Low loss high mesa optical waveguides based on InGaAsP/InP heterostructures. Journal of Nanoscience and Nanotechnology. 6: 3562-6. PMID 17252812 |
0.572 |
|
2006 |
Zhao W, Mohammed FM, Adesida I. Application of the Ag-Based Ohmic Contact to the Realization of Thermally-Stable InAlAs/InGaAs/InP High Electron Mobility Transistors Japanese Journal of Applied Physics. 45: 7632-7636. DOI: 10.1143/Jjap.45.7632 |
0.66 |
|
2006 |
Wang L, Zhao W, Adesida I. Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs∕InGaAs high electron mobility transistors Applied Physics Letters. 89: 211910. DOI: 10.1063/1.2393005 |
0.56 |
|
2006 |
Zhao W, Wang L, Adesida I. Electrical and structural investigations of Ag-based Ohmic contacts for InAlAs∕InGaAs∕InP high electron mobility transistors Applied Physics Letters. 89: 072105. DOI: 10.1063/1.2337102 |
0.58 |
|
2006 |
Wang L, Zhao W, Adesida I. Analytical XTEM Study of Ir/InAlAs Interfacial Reaction for InP-based High Electron Mobility Transistors (HEMTs) Gate Technology Microscopy and Microanalysis. 12: 718-719. DOI: 10.1017/S1431927606068553 |
0.525 |
|
2005 |
Zhao W, Bae JW, Adesida I, Jang JH. Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched InP∕InGaAsP high mesa waveguides Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2041. DOI: 10.1116/1.2050659 |
0.485 |
|
2005 |
Zhao W, Adesida I. High temperature annealed Ge∕Ag∕Ni ohmic contact for InAlAs∕InGaAs HEMTs Electronics Letters. 41: 664. DOI: 10.1049/EL:20051106 |
0.466 |
|
2004 |
Jang JH, Zhao W, Bae JW, Adesida I, Lepore A, Kwakernaak M, Abeles JH. Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall of deep-etched InP∕InGaAsP heterostructures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2538. DOI: 10.1116/1.1800331 |
0.606 |
|
2003 |
Bae JW, Zhao W, Jang JH, Adesida I, Lepore A, Kwakernaak M, Abeles JH. Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 2888. DOI: 10.1116/1.1625956 |
0.619 |
|
2003 |
Jang JH, Zhao W, Bae JW, Selvanathan D, Rommel SL, Adesida I, Lepore A, Kwakernaak M, Abeles JH. Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope Applied Physics Letters. 83: 4116-4118. DOI: 10.1063/1.1627480 |
0.639 |
|
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