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Yoosuf N. Picard, Ph.D. - Publications

Affiliations: 
2006 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
Materials Science Engineering
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67 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Picard Y. Microscopy & Microanalysis 2018 Microscopy Today. 27: 30-31. DOI: 10.1017/S1551929518001244  0.332
2018 Picard Y. Microscopy & Microanalysis 2018 in Baltimore, Maryland Microscopy Today. 26: 38-41. DOI: 10.1017/S1551929517001249  0.332
2018 Picard YN. A Review of Electron Channeling Contrast Imaging for Non-Destructive Defect Analysis of Crystalline Solids Microscopy and Microanalysis. 24: 630-631. DOI: 10.1017/S1431927618003641  0.334
2018 Hecht MD, Webler BA, Picard YN. Effects of Nb Modification and Cooling Rate on the Microstructure in an Ultrahigh Carbon Steel Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science. 49: 2161-2172. DOI: 10.1007/S11661-018-4588-1  0.3
2017 Tessmer J, DeGraef M, Picard YN. Investigating Defect Contrast in GeXSh1-x/Si Epitaxial Structures Using Electron Channeling Contrast Imaging Microscopy and Microanalysis. 23: 574-575. DOI: 10.1017/S1431927617003555  0.347
2017 Tessmer J, Singh S, Picard YN, DeGraef M. Automated Acquisition and Analysis of Selected Area Electron Channeling Patterns in an FEG-SEM Microscopy and Microanalysis. 23: 550-551. DOI: 10.1017/S1431927617003439  0.305
2016 Kwon J, Sharma AA, Chen CM, Fantini A, Jurczak M, Herzing AA, Bain JA, Picard YN, Skowronski M. Transient thermometry and HRTEM analysis of filamentary resistive switches. Acs Applied Materials & Interfaces. PMID 27351065 DOI: 10.1021/Acsami.6B05034  0.307
2016 Yan M, Picard YN, Salvador PA. Combined Electron Channeling Contrast Imagining (ECCI) and Transmission Electron Microscopy (TEM) Studies of Coherent Domain Boundaries in Strained La 0.7 Sr 0.3 MnO 3 (LSM) Epitaxial Thin Films Microscopy and Microanalysis. 22: 1346-1347. DOI: 10.1017/S1431927616007571  0.35
2015 Kamaladasa RJ, Sharma AA, Lai YT, Chen W, Salvador PA, Bain JA, Skowronski M, Picard YN. In situ TEM imaging of defect dynamics under electrical bias in resistive switching rutile-TiO₂. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 21: 140-53. PMID 25529361 DOI: 10.1017/S1431927614013555  0.309
2015 Carnevale SD, Deitz JI, Carlin JA, Picard YN, McComb DW, De Graef M, Ringel SA, Grassman TJ. Applications of electron channeling contrast imaging for the rapid characterization of extended defects in III-V/Si heterostructures Ieee Journal of Photovoltaics. 5: 676-682. DOI: 10.1109/Jphotov.2014.2379111  0.385
2015 Yan M, De Graef M, Picard YN, Salvador PA. Electron channeling contrast imaging of anti-phase boundaries in coherently strained La0.7Sr0.3MnO3 thin films on (110)-oriented SrTiO3 Applied Physics Letters. 107. DOI: 10.1063/1.4927201  0.336
2015 Abadier M, Song H, Sudarshan TS, Picard YN, Skowronski M. Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth Journal of Crystal Growth. 418: 7-14. DOI: 10.1016/J.Jcrysgro.2015.02.004  0.324
2014 Picard YN, Liu M, Lammatao J, Kamaladasa R, De Graef M. Theory of dynamical electron channeling contrast images of near-surface crystal defects. Ultramicroscopy. 146: 71-8. PMID 25127516 DOI: 10.1016/J.Ultramic.2014.07.006  0.343
2014 Carnevale SD, Deitz JI, Carlin JA, Picard YN, De Graef M, Ringel SA, Grassman TJ. Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging Applied Physics Letters. 104. DOI: 10.1063/1.4883371  0.392
2014 Thompson H, Lammatao J, Hecht MD, Yousif A, Campbell BR, Picard YN. Ultrashort pulsed laser induced heat affected zones characterized by ion channeling contrast imaging Microscopy and Microanalysis. 20: 1480-1481. DOI: 10.1017/S1431927614009131  0.38
2014 Liu M, Picard YN. Strain Associated with Surface-Penetrating Dislocations Visible by Electron Channeling Contrast Imaging Microscopy and Microanalysis. 20: 1076-1077. DOI: 10.1017/S1431927614007107  0.337
2014 Yan M, De Graef M, Picard YN, Salvador PA. Defect analysis in La0.7Sr0.3MnO3 epitaxial thin films by electron channeling contrast imaging (ECCI) Microscopy and Microanalysis. 20: 1036-1037. DOI: 10.1017/S1431927614006904  0.357
2014 Deitz J, Carnevale S, De Graef M, Picard YN, Ringel SA, Grassman T, McComb DW. Using electron channeling contrast imaging for misfit dislocation characterization in heteroepitaxial III-V/Si thin films Microscopy and Microanalysis. 20: 552-553. DOI: 10.1017/S1431927614004486  0.354
2014 Abadier M, Myers-Ward RL, Song H, Kurt Gaskill D, Eddy CR, Sudarshan TS, Picard YN, Skowronski M. Site specific TEM specimen preparation for characterization of extended defects in 4H-SiC epilayers Microscopy and Microanalysis. 20: 344-345. DOI: 10.1017/S1431927614003444  0.349
2014 Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM. Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates Journal of Crystal Growth. 387: 16-22. DOI: 10.1016/J.Jcrysgro.2013.10.026  0.326
2013 Abadier M, Myers-Ward RL, Mahadik NA, Stahlbush RE, Wheeler VD, Nyakiti LO, Eddy CR, Gaskill DK, Song H, Sudarshan TS, Picard YN, Skowronski M. Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy Journal of Applied Physics. 114. DOI: 10.1063/1.4821242  0.304
2013 Kamaladasa RJ, Noman M, Chen W, Salvador PA, Bain JA, Skowronski M, Picard YN. Dislocation impact on resistive switching in single-crystal SrTiO 3 Journal of Applied Physics. 113. DOI: 10.1063/1.4811525  0.31
2012 Picard YN, Kamaladasa R, Graef MD, Nuhfer NT, Mershon WJ, Owens T, Sedlacek L, Lopour F. Future Prospects for Defect and Strain Analysis in the SEM via Electron Channeling Microscopy Today. 20: 12-16. DOI: 10.1017/S1551929512000077  0.33
2012 Picard Y, Kamaladasa R, Liu F, Huang L, Porter L, Davis R. Dislocation Identification and Mapping in GaN by Electron Channeling Contrast Imaging Microscopy and Microanalysis. 18: 718-719. DOI: 10.1017/S1431927612005442  0.331
2012 Kamaladasa R, Norman M, Lu Y, Bain J, Salvador P, Skowronski M, De Graef M, Picard Y. Dislocation Analysis in Metal-Oxide Materials and Devices by Electron Channeling Contrast Imaging Microscopy and Microanalysis. 18: 706-707. DOI: 10.1017/S1431927612005387  0.328
2011 Kamaladasa RJ, Liu F, Porter LM, Davis RF, Koleske DD, Mulholland G, Jones KA, Picard YN. Identifying threading dislocations in GaN films and substrates by electron channelling. Journal of Microscopy. 244: 311-9. PMID 21883210 DOI: 10.1111/J.1365-2818.2011.03538.X  0.398
2011 Myers-Ward RL, Nyakiti LO, Hite JK, Glembocki OJ, Bezares FJ, Caldwell JD, Imhoff GA, Hobart KD, Culbertson JC, Picard YN, Wheeler VD, Eddy CR, Gaskill DK. Growth of 4H- and 3C-SiC epitaxial layers on 4H-SiC step-free mesas Materials Science Forum. 679: 119-122. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.119  0.333
2011 Chun S, Picard YN, Whitacre JF. Relating Precursor Pyrolysis Conditions and Aqueous Electrolyte Capacitive Energy Storage Properties for Activated Carbons Derived from Anhydrous Glucose-d Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3518416  0.515
2011 Chung S, Wheeler V, Myers-Ward R, Nyakiti LO, Eddy CR, Gaskill DK, Skowronski M, Picard YN. Secondary electron dopant contrast imaging of compound semiconductor junctions Journal of Applied Physics. 110: 014902. DOI: 10.1063/1.3597785  0.32
2011 Chung S, Wheeler V, Myers-Ward R, Eddy CR, Gaskill DK, Wu P, Picard YN, Skowronski M. Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy Journal of Applied Physics. 109: 094906. DOI: 10.1063/1.3579447  0.367
2011 Kamaladasa R, Picard Y. Influence of Backscattered Electron Imaging Geometry on Channeling Contrast of Dislocations Microscopy and Microanalysis. 17: 908-909. DOI: 10.1017/S1431927611005411  0.336
2011 Kamaladasa RJ, Jiang W, Picard YN. Imaging Dislocations in Single-Crystal SrTiO3 Substrates by Electron Channeling Journal of Electronic Materials. 40: 2222-2227. DOI: 10.1007/S11664-011-1723-9  0.386
2010 Maximenko SI, Freitas JA, Picard YN, Klein PB, Myers-Ward RL, Lew KK, Muzykov PG, Gaskill DK, Eddy CR, Sudarshan TS. CL/EBIC-SEM techniques for evaluation of impact of crystallographic defects on carrier lifetime in 4H-SiC epitaxial layers Materials Science Forum. 645: 211-214. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.211  0.318
2010 Picard Y, Kamaladasa R, Kumar N, Trager-Cowan C, Jiang W, Skowronski M, Salvador P, Behmemburg H, Giesen C, Day A, England G. Future Prospects for SEM-based Defect Analysis using Fast Electrons Microscopy and Microanalysis. 16: 608-609. DOI: 10.1017/S1431927610063348  0.328
2010 Kamaladasa R, Twigg M, Graef MD, Picard Y. Towards Non-Destructive Burgers Vector Identification of Dislocations in Electronic Materials via Electron Channeling Contrast Imaging Microscopy and Microanalysis. 16: 1558-1559. DOI: 10.1017/S1431927610062161  0.349
2010 Tadjer MJ, Anderson TJ, Hobart KD, Mastro MA, Hite JK, Caldwell JD, Picard YN, Kub FJ, Eddy CR. Electrical and optical characterization of AlGaN/GaN HEMTs with in situ and Ex situ deposited SiN x layers Journal of Electronic Materials. 39: 2452-2458. DOI: 10.1007/S11664-010-1343-9  0.31
2010 Twigg ME, Picard YN, Caldwell JD, Eddy CR, Mastro MA, Holm RT, Neudeck PG, Trunek AJ, Powell JA. Diffraction contrast of threading dislocations in gan and 4h-SiC epitaxial layers using electron channeling contrast imaging Journal of Electronic Materials. 39: 743-746. DOI: 10.1007/S11664-010-1143-2  0.356
2009 VanMil BL, Stahlbush RE, Myers-Ward RL, Picard YN, Kitt SA, McCrate JM, Katz SL, Gaskill DK, Eddy CR. Basal plane dislocation mitigation in 8° off-cut 4H-SiC through in situ growth interrupts during chemical vapor deposition Materials Science Forum. 615: 61-66. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.61  0.308
2009 Picard YN, Locke C, Frewin CL, Twigg ME, Saddow SE. Crystalline quality and surface morphology of 3C-SiC films on Si evaluated by electron channeling contrast imaging Materials Science Forum. 615: 435-438. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.435  0.391
2009 Picard YN, Twigg ME, Caldwell JD, Eddy CR, Mastro MA, Holm RT. Using multiple contrast mechanisms via forescatter electron channeling contrast imaging to resolve the burgers vector of GaN threading dislocations Microscopy and Microanalysis. 15: 674-675. DOI: 10.1017/S1431927609094562  0.344
2009 Twigg M, Picard Y, Caldwell J, Eddy C. Burgers Vector Determination of Threading Screw Dislocations in 4H-SiC via Forescattered Electron Channeling Contrast Imaging Microscopy and Microanalysis. 15: 1018-1019. DOI: 10.1017/S1431927609092319  0.34
2009 Picard YN, Twigg ME, Caldwell JD, Eddy CR, Mastro MA, Holm RT. Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging Scripta Materialia. 61: 773-776. DOI: 10.1016/J.Scriptamat.2009.06.021  0.372
2009 Mazeina L, Picard YN, Caldwell JD, Glaser ER, Prokes SM. Growth and photoluminescence properties of vertically aligned SnO2 nanowires Journal of Crystal Growth. 311: 3158-3162. DOI: 10.1016/J.Jcrysgro.2009.03.025  0.309
2008 Picard YN, Locke C, Frewin CL, Myers-Ward RL, Caldwell JD, Hobart KD, Twigg ME, Saddow SE. Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C07-08  0.344
2008 Twigg ME, Picard YN, Caldwell JD, Eddy CR, Neudeck PG, Trunek AJ, Powell JA. Simulation of Forescattered Electron Channeling Contrast Imaging of Threading Dislocations Penetrating SiC Surfaces Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C03-20  0.335
2008 Picard YN, Twigg ME. Diffraction contrast and Bragg reflection determination in forescattered electron channeling contrast images of threading screw dislocations in 4H-SiC Journal of Applied Physics. 104: 124906. DOI: 10.1063/1.3042224  0.38
2008 Picard YN, McDonald JP, Friedmann TA, Yalisove SM, Adams DP. Nanosecond laser induced ignition thresholds and reaction velocities of energetic bimetallic nanolaminates Applied Physics Letters. 93. DOI: 10.1063/1.2981570  0.6
2008 Picard YN, Liu KX, Stahlbush RE, Twigg ME, Zhang X, Skowronski M. Nondestructive dislocation delineation using topographically enhanced imaging of surface morphologies in 4H-SiC epitaxial layers Journal of Applied Physics. 103: 74904. DOI: 10.1063/1.2903873  0.353
2008 Picard YN, Yalisove SM. Femtosecond laser heat affected zones profiled in Co∕Si multilayer thin films Applied Physics Letters. 92: 14102. DOI: 10.1063/1.2832640  0.665
2008 Picard YN, Liu KX, Stahlbush RE, Twigg ME. Imaging surface pits and dislocations in 4H-SiC by forescattered electron detection and photoluminescence Journal of Electronic Materials. 37: 655-661. DOI: 10.1007/S11664-007-0327-X  0.357
2008 Picard YN, Twigg ME, Caldwell JD, Eddy CR, Neudeck PG, Trunek AJ, Powell JA. Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging Journal of Electronic Materials. 37: 691-698. DOI: 10.1007/S11664-007-0308-0  0.384
2007 Picard YN, Caldwell JD, Twigg ME, Eddy CR, Mastro MA, Henry RL, Holm RT, Neudeck PG, Trunek AJ, Powell JA. Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging Applied Physics Letters. 91. DOI: 10.1063/1.2777151  0.376
2007 Picard YN, Twigg ME, Mastro MA, Eddy CR, Henry RL, Holm RT, Neudeck PG, Trunek AJ, Powell JA. Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC Applied Physics Letters. 91. DOI: 10.1063/1.2754638  0.343
2007 Picard YN, Twigg ME, Caldwell JD, Eddy CR, Neudeck PG, Trunek AJ, Powell JA. Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC Applied Physics Letters. 90: 234101. DOI: 10.1063/1.2746075  0.353
2006 Picard YN, Adams DP, Palmer JA, Yalisove SM. Pulsed laser ignition of reactive multilayer films Applied Physics Letters. 88. DOI: 10.1063/1.2191952  0.616
2006 Picard Y, Yalisove S. Temperature Profiling Femtosecond Laser Induced Modifications Through Transmission Electron Micrscopy Microscopy and Microanalysis. 12: 636-637. DOI: 10.1017/S1431927606065627  0.645
2006 Feng Q, Picard Y, McDonald J, Van Rompay P, Yalisove S, Pollock T. Femtosecond laser machining of single-crystal superalloys through thermal barrier coatings Materials Science and Engineering: A. 430: 203-207. DOI: 10.1016/J.Msea.2006.05.104  0.719
2006 Liu Hh, Mourou G, McDonald JP, Picard YN, Yalisove SM, Juhasz T. SEM and SPM studies of single-shot damage on silicon Optics Infobase Conference Papers.  0.613
2005 Picard YN, Yalisove SM. Nano-Thermometry: Transmission Electron Microscopy of Femtosecond Laser Irradiated Co/Si Multilayer Thin Foils Mrs Proceedings. 899: 141-145. DOI: 10.1557/Proc-0899-N07-30  0.657
2005 McDonald JP, McClelland AA, Picard YN, Yalisove SM. Role of a native oxide on femtosecond laser interaction with silicon (100) near the damage threshold Applied Physics Letters. 86: 264103. DOI: 10.1063/1.1946916  0.711
2005 Feng Q, Picard Y, Liu H, Yalisove S, Mourou G, Pollock T. Femtosecond laser micromachining of a single-crystal superalloy Scripta Materialia. 53: 511-516. DOI: 10.1016/J.Scriptamat.2005.05.006  0.671
2004 Feng Q, Picard YN, Liu H, Yalisove SM, Mourou G, Pollock TM. Femtosecond Laser Micromachining Of Single-Crystal Superalloys Superalloys. 687-696. DOI: 10.7449/2004/Superalloys_2004_687_696  0.663
2004 Picard YN, Adams DP, Yalisove SM. Femtosecond laser interactions with Co/Al multilayer films Mrs Proceedings. 850: 115-121. DOI: 10.1557/Proc-850-Mm1.9  0.662
2004 Shyam A, Picard YN, Jones JW, Allison JE, Yalisove SM. Small fatigue crack propagation from micronotches in the cast aluminum alloy W319 Scripta Materialia. 50: 1109-1114. DOI: 10.1016/J.Scriptamat.2004.01.031  0.558
2003 Picard YN, Liu HH, Speys SJ, McDonald JP, Adams DP, Weihs TP, Yalisove SM. Cutting Reactive Foils Without Igniting Them (A Femtosecond Laser Machining Approach) Mrs Proceedings. 800: 387-392. DOI: 10.1557/Proc-800-Aa9.8  0.707
2003 Picard YN, Liu HH, Speys SJ, McDonald JP, Adams DP, Weihs TP, Yalisove SM. Cutting reactive foils without igniting them (a femtosecond laser machining approach) Materials Research Society Symposium - Proceedings. 800: 387-392.  0.64
2002 Picard YN, Adams DP, Spahn OB, Yalisove SM, Dagel DJ, Sobczak J. Low Stress, High Reflectivity Thin Films for MEMS Mirrors Mrs Proceedings. 729. DOI: 10.1557/Proc-729-U3.11  0.53
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