| Year |
Citation |
Score |
| 2020 |
Tatavarthi SS, Wang S, Wang Y, Chen J. Rapid and Highly Sensitive Extended Gate FET-Based Sensors for Arsenite Detection Using a Handheld Device Ecs Journal of Solid State Science and Technology. 9: 115014. DOI: 10.1149/2162-8777/Abab18 |
0.392 |
|
| 2020 |
Wang S, Hsieh C, Sukesan R, Chen J, Wang Y. Highly Sensitive Lead Ion Detection in One Drop of Human Whole Blood Using Impedance-Modulated Field-Effect Transistors and a Portable Measurement Device Ecs Journal of Solid State Science and Technology. 9: 55020. DOI: 10.1149/2162-8777/Ab8867 |
0.315 |
|
| 2019 |
Sukesan R, Chen YT, Shahim S, Wang SL, Sarangadharan I, Wang YL. Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device. Sensors (Basel, Switzerland). 19. PMID 31086067 DOI: 10.3390/S19092209 |
0.364 |
|
| 2019 |
Shahim S, Sukesan R, Sarangadharan I, Wang YL. Multiplexed Ultra-Sensitive Detection of Cr(III) and Cr(VI) Ion by FET Sensor Array in a Liquid Medium. Sensors (Basel, Switzerland). 19. PMID 31035499 DOI: 10.3390/S19091969 |
0.307 |
|
| 2019 |
Tai TY, Sinha A, Sarangadharan I, Pulikkathodi AK, Wang SL, Lee GY, Chyi JI, Shiesh SC, Lee GB, Wang YL. Design and demonstration of tunable amplified sensitivity of AlGaN/GaN high electron mobility transistor (HEMT)-based biosensors in human serum. Analytical Chemistry. PMID 30994326 DOI: 10.1021/acs.analchem.9b00353 |
0.316 |
|
| 2019 |
Kuo WC, Sarangadharan I, Pulikkathodi AK, Chen PH, Wang SL, Wu CR, Wang YL. Investigation of Electrical Stability and Sensitivity of Electric Double Layer Gated Field-Effect Transistors (FETs) for miRNA Detection. Sensors (Basel, Switzerland). 19. PMID 30934691 DOI: 10.3390/S19071484 |
0.371 |
|
| 2019 |
Sarangadharan I, Huang S, Kuo W, Chen P, Wang Y. Rapid detection of NT-proBNP from whole blood using FET based biosensors for homecare Sensors and Actuators B-Chemical. 285: 209-215. DOI: 10.1016/J.Snb.2019.01.066 |
0.381 |
|
| 2018 |
Pulikkathodi AK, Sarangadharan I, Lo CY, Chen PH, Chen CC, Wang YL. Miniaturized Biomedical Sensors for Enumeration of Extracellular Vesicles. International Journal of Molecular Sciences. 19. PMID 30060613 DOI: 10.3390/Ijms19082213 |
0.377 |
|
| 2018 |
Chen YT, Sarangadharan I, Sukesan R, Hseih CY, Lee GY, Chyi JI, Wang YL. High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity. Scientific Reports. 8: 8300. PMID 29844607 DOI: 10.1038/S41598-018-26792-9 |
0.375 |
|
| 2018 |
Pulikkathodi AK, Sarangadharan I, Chen YH, Lee GY, Chyi JI, Lee GB, Wang YL. Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor. Lab On a Chip. PMID 29488525 DOI: 10.1039/C7Lc01305A |
0.365 |
|
| 2018 |
Sarangadharan I, Wang SL, Tai TY, Pulikkathodi AK, Hsu CP, Chiang HK, Liu LY, Wang YL. Risk stratification of heart failure from one drop of blood using hand-held biosensor for BNP detection. Biosensors & Bioelectronics. 107: 259-265. PMID 29477882 DOI: 10.1016/J.Bios.2018.02.036 |
0.349 |
|
| 2018 |
Sarangadharan I, Wang SL, Sukesan R, Chen PC, Dai TY, Pulikkathodi AK, Hsu CP, Chiang HK, Liu LY, Wang YL. Single drop Whole Blood Diagnostics: Portable Biomedical Sensor for cardiac Troponin I detection. Analytical Chemistry. PMID 29376635 DOI: 10.1021/Acs.Analchem.7B05018 |
0.365 |
|
| 2018 |
Wang Y, Jang S, Sakata T, Ren F. Preface—JSS Focus Issue on Semiconductor-Based Sensors for Application to Vapors, Chemicals, Biological Species, and Medical Diagnosis Ecs Journal of Solid State Science and Technology. 7. DOI: 10.1149/2.0341807Jss |
0.613 |
|
| 2018 |
Chen Y, Hseih C, Sarangadharan I, Sukesan R, Lee G, Chyi J, Wang Y. Beyond the Limit of Ideal Nernst Sensitivity: Ultra-High Sensitivity of Heavy Metal Ion Detection with Ion-Selective High Electron Mobility Transistors Ecs Journal of Solid State Science and Technology. 7: Q176-Q183. DOI: 10.1149/2.0011810Jss |
0.31 |
|
| 2018 |
Chen Y, Tai T, Hsu C, Sarangadharan I, Pulikkathodi AK, Wang H, Sukesan R, Lee G, Chyi J, Chen C, Lee G, Wang Y. Direct detection of DNA using electrical double layer gated high electron mobility transistor in high ionic strength solution with high sensitivity and specificity Sensors and Actuators B-Chemical. 271: 110-117. DOI: 10.1016/J.Snb.2018.05.119 |
0.386 |
|
| 2018 |
Chen Y, Kuo W, Tai T, Hsu C, Sarangadharan I, Pulikkathodi AK, Wang S, Sukesan R, Lin H, Kao K, Hsu C, Chen C, Wang Y. Highly sensitive and rapid MicroRNA detection for cardiovascular diseases with electrical double layer (EDL) gated AlGaN/GaN high electron mobility transistors Sensors and Actuators B-Chemical. 262: 365-370. DOI: 10.1016/J.Snb.2018.02.018 |
0.36 |
|
| 2018 |
Pulikkathodi AK, Sarangadharan I, Hsu C, Chen Y, Hung L, Lee G, Chyi J, Lee G, Wang Y. Enumeration of circulating tumor cells and investigation of cellular responses using aptamer-immobilized AlGaN/GaN high electron mobility transistor sensor array Sensors and Actuators B-Chemical. 257: 96-104. DOI: 10.1016/J.Snb.2017.10.127 |
0.386 |
|
| 2017 |
Hsu C, Chen P, Pulikkathodi AK, Hsiao Y, Chen C, Wang Y. A Package Technology for Miniaturized Field-Effect Transistor-Based Biosensors and the Sensor Array Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0281705Jss |
0.334 |
|
| 2017 |
Yang J, Carey P, Ren F, Wang Y, Good ML, Jang S, Mastro MA, Pearton SJ. Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures Applied Physics Letters. 111: 202104. DOI: 10.1063/1.5011151 |
0.641 |
|
| 2016 |
Kuan CM, Lin ST, Yen TH, Wang YL, Cheng CM. Paper-based diagnostic devices for clinical paraquat poisoning diagnosis. Biomicrofluidics. 10: 034118. PMID 27462379 DOI: 10.1063/1.4953257 |
0.309 |
|
| 2016 |
Xiao J, Hsu C, Sarangadharan I, Lee G, Chyi J, Wang Y. Pt/GaN Schottky Diodes for Highly Sensitive Hydrogen Sulfide Detection Ecs Journal of Solid State Science and Technology. 5. DOI: 10.1149/2.0311605Jss |
0.33 |
|
| 2016 |
Hsu C, Huang Y, Wang Y. Investigation of the Non-Faradaic Current of DNA-Immobilized Microelectrodes in Concentrated Salt Environment for Biosensors Ecs Journal of Solid State Science and Technology. 5. DOI: 10.1149/2.0141606Jss |
0.318 |
|
| 2015 |
Fang JY, Chu CH, Sarang I, Fang KC, Hsu CP, Huang YF, Hsu CH, Chen CC, Li SS, Andrew Yeh J, Yao DJ, Wang YL. Electronic hydroxyl radical microsensors based on the conductivity change of polyaniline Sensors and Actuators, B: Chemical. 208: 99-105. DOI: 10.1016/J.Snb.2014.11.016 |
0.328 |
|
| 2014 |
Hsu YR, Kang YW, Fang JY, Lee GY, Chyi JI, Chang CK, Huang CC, Hsu CP, Huang TH, Huang YF, Sun YC, Hsu CH, Chen CC, Li SS, Yeh JA, ... ... Wang YL, et al. Investigation of C-terminal domain of SARS nucleocapsid protein-Duplex DNA interaction using transistors and binding-site models. Sensors and Actuators. B, Chemical. 193: 334-339. PMID 32288246 DOI: 10.1016/J.Snb.2013.11.087 |
0.36 |
|
| 2014 |
Fang KC, Hsu CP, Kang YW, Fang JY, Huang CC, Hsu CH, Huang YF, Chen CC, Li SS, Andrew Yeh J, Yao DJ, Wang YL. Realization of an ultra-sensitive hydrogen peroxide sensor with conductance change of horseradish peroxidase-immobilized polyaniline and investigation of the sensing mechanism. Biosensors & Bioelectronics. 55: 294-300. PMID 24398124 DOI: 10.1016/J.Bios.2013.12.029 |
0.367 |
|
| 2014 |
Fang KC, Chu CH, Hsu CP, Kang YW, Fang JY, Hsu CH, Huang YF, Chen CC, Li SS, Andrew Yeh J, Yao DJ, Wang YL. Cost-effective and highly sensitive cholesterol microsensors with fast response based on the enzyme-induced conductivity change of polyaniline Applied Physics Letters. 105. DOI: 10.1063/1.4896289 |
0.31 |
|
| 2013 |
Hsu YR, Lee GY, Chyi JI, Chang CK, Huang CC, Hsu CP, Huang TH, Ren F, Wang YL. Detection of Severe Acute Respiratory Syndrome (SARS) Coronavirus Nucleocapsid Protein Using AlGaN/GaN High Electron Mobility Transistors. Ecs Transactions. 50: 239-243. PMID 32288936 DOI: 10.1149/05006.0239ecst |
0.401 |
|
| 2013 |
Huang CC, Lee GY, Chyi JI, Cheng HT, Hsu CP, Hsu YR, Hsu CH, Huang YF, Sun YC, Chen CC, Li SS, Yeh JA, Yao DJ, Ren F, Wang YL. AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study. Biosensors & Bioelectronics. 41: 717-22. PMID 23102432 DOI: 10.1016/J.Bios.2012.09.066 |
0.44 |
|
| 2013 |
Kang YW, Lee GY, Chyi JI, Hsu CP, Hsu YR, Hsu CH, Huang YF, Sun YC, Chen CC, Chun Hung S, Ren F, Andrew Yeh J, Wang YL. Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models Applied Physics Letters. 102. DOI: 10.1063/1.4803916 |
0.389 |
|
| 2013 |
Liu C, Hsu C, Yeh JA, Sun Y, Huang Y, Chu BH, Ren F, Wang Y. Light-actuated water droplet motions on ZnO nanorods Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems. 19: 245-251. DOI: 10.1007/S00542-012-1562-5 |
0.411 |
|
| 2012 |
Liu C, Hsu C, Yeh JA, Sun Y, Huang Y, Chu BH, Ren F, Wang Y. Pushing or pulling droplets on ZnO nanorods with an UV light Proceedings of Spie. 8463: 846306. DOI: 10.1117/12.929901 |
0.405 |
|
| 2011 |
Chu BH, Chang CY, Kroll K, Denslow N, Wang YL, Pearton SJ, Lin J, Dabiran AM, Wowchak AM, Cui B, Chow PP, Johnson JW, Rajagopal P, Roberts JC, Piner EL, et al. Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2486-2488. DOI: 10.1002/Pssc.201001171 |
0.513 |
|
| 2010 |
Lee J, Wang YL, Ren F, Lele TP. Stamp wound assay for studying coupled cell migration and cell debris clearance. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 16672-6. PMID 20961056 DOI: 10.1021/La103542Y |
0.35 |
|
| 2010 |
Wang YL, Chang CY, Lim W, Pearton SJ, Norton DP, Chu BH, Lo CF, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 376-379. DOI: 10.1116/1.3368467 |
0.492 |
|
| 2010 |
Chu BH, Chang CY, Kroll K, Denslow N, Wang Y, Pearton SJ, Dabiran AM, Wowchak AM, Cui B, Chow PP, Ren F. Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 96: 013701. DOI: 10.1063/1.3279159 |
0.508 |
|
| 2010 |
Wang Y, Chu B, Chang C, Lo C, Pearton S, Dabiran A, Chow P, Ren F. Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors Sensors and Actuators B: Chemical. 146: 349-352. DOI: 10.1016/J.Snb.2010.02.026 |
0.504 |
|
| 2010 |
Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J, Norton DP. Recent advances in wide bandgap semiconductor biological and gas sensors Progress in Materials Science. 55: 1-59. DOI: 10.1016/J.Pmatsci.2009.08.003 |
0.512 |
|
| 2010 |
Wang Y, Ren F, Lim W, Pearton S, Baik KH, Hwang S, Gon Seo Y, Jang S. Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes Current Applied Physics. 10: 1029-1032. DOI: 10.1016/J.Cap.2009.12.034 |
0.623 |
|
| 2009 |
Wang Y, Chu BH, Chen KH, Chang C, Lele TP, Papadi G, Coleman JK, Sheppard BJ, Dungan CF, Pearton SJ, Johnson JW, Ren F. Fast Detection of Perkinsus Marinus, a Prevalent Pathogen of Oysters and Clams from Sea Waters Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I09-10 |
0.502 |
|
| 2009 |
Wang Y, Chu B, Chang C, Chen KH, Zhang Y, Sun Q, Han J, Pearton S, Ren F. High Sensitivity of Hydrogen Sensing Through N-polar GaN Schottky Diodes Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-06 |
0.494 |
|
| 2009 |
Chu BH, Lin H, Gwo S, Wang Y, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Ren F. Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-05 |
0.491 |
|
| 2009 |
Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J. Recent Advances in Wide Bandgap Semiconductor Biological and Gas Sensors Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-01 |
0.512 |
|
| 2009 |
Chang CY, Wang Y, Gila BP, Gerger AP, Pearton SJ, Lo CF, Ren F, Sun Q, Zhang Y, Han J. Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett. 95, 082110 (2009)] Applied Physics Letters. 95: 139901. DOI: 10.1063/1.3238266 |
0.553 |
|
| 2009 |
Chang CY, Wang Y, Gila BP, Gerger AP, Pearton SJ, Lo CF, Ren F, Sun Q, Zhang Y, Han J. Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Applied Physics Letters. 95: 082110. DOI: 10.1063/1.3216576 |
0.627 |
|
| 2009 |
Wang YL, Chu BH, Chen KH, Chang CY, Lele TP, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, et al. Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 94. DOI: 10.1063/1.3153130 |
0.531 |
|
| 2009 |
Wang Y, Ren F, Zhang U, Sun Q, Yerino CD, Ko TS, Cho YS, Lee IH, Han J, Pearton SJ. Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes Applied Physics Letters. 94: 212108. DOI: 10.1063/1.3148369 |
0.473 |
|
| 2009 |
Wang Y, Chu B, Chang C, Chen K, Zhang Y, Sun Q, Han J, Pearton S, Ren F. Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes Sensors and Actuators B: Chemical. 142: 175-178. DOI: 10.1016/J.Snb.2009.07.040 |
0.463 |
|
| 2008 |
Lim W, Kim S, Wang Y, Lee JW, Norton DP, Pearton SJ, Ren F, Kravchenko II. High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering Journal of the Electrochemical Society. 155: H383. DOI: 10.1149/1.2903294 |
0.496 |
|
| 2008 |
Wang Y, Kim HS, Norton DP, Pearton SJ, Ren F. Hydrogen Effects on the Optical and Electrical Properties of ZnO Light-Emitting Diodes Electrochemical and Solid-State Letters. 11: H88. DOI: 10.1149/1.2837657 |
0.463 |
|
| 2008 |
Wang Y, Covert LN, Anderson TJ, Lim W, Lin J, Pearton SJ, Norton DP, Zavada JM, Ren F. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs Electrochemical and Solid-State Letters. 11: H60. DOI: 10.1149/1.2825474 |
0.47 |
|
| 2008 |
Lim W, Kim S-, Wang Y, Lee JW, Norton DP, Pearton SJ, Ren F, Kravchenko II. Stable room temperature deposited amorphous InGaZnO4 thin film transistors Journal of Vacuum Science & Technology B. 26: 959-962. DOI: 10.1116/1.2917075 |
0.479 |
|
| 2008 |
Wang Y, Ren F, Kim HS, Norton DP, Pearton SJ. Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes Ieee Journal of Selected Topics in Quantum Electronics. 14: 1048-1052. DOI: 10.1109/Jstqe.2008.919736 |
0.476 |
|
| 2008 |
Wang YL, Chu BH, Chen KH, Chang CY, Lele TP, Tseng Y, Pearton SJ, Ramage J, Hooten D, Dabiran A, Chow PP, Ren F. Botulinum toxin detection using AlGaNGaN high electron mobility transistors Applied Physics Letters. 93. DOI: 10.1063/1.3056612 |
0.509 |
|
| 2008 |
Kim HS, Lugo F, Pearton SJ, Norton DP, Wang Y, Ren F. Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition Applied Physics Letters. 92: 112108. DOI: 10.1063/1.2900711 |
0.46 |
|
| 2008 |
Wang Y, Kim HS, Norton DP, Pearton SJ, Ren F. Dielectric passivation effects on ZnO light emitting diodes Applied Physics Letters. 92: 112101. DOI: 10.1063/1.2898709 |
0.46 |
|
| 2008 |
Lim W, Wang Y, Ren F, Norton D, Kravchenko I, Zavada J, Pearton S. Indium zinc oxide thin films deposited by sputtering at room temperature Applied Surface Science. 254: 2878-2881. DOI: 10.1016/J.Apsusc.2007.10.032 |
0.438 |
|
| 2007 |
Lim W, Wang Y, Ren F, Norton DP, Kravchenko II, Zavada JM, Pearton SJ. Room-Temperature-Deposited Indium-Zinc Oxide Thin Films with Controlled Conductivity Electrochemical and Solid-State Letters. 10: H267. DOI: 10.1149/1.2750441 |
0.427 |
|
| 2007 |
Wang Y, Ren F, Lim W, Norton DP, Pearton SJ, Kravchenko II, Zavada JM. Room temperature deposited indium zinc oxide thin film transistors Applied Physics Letters. 90: 232103. DOI: 10.1063/1.2746084 |
0.485 |
|
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