Year |
Citation |
Score |
2020 |
Kumar R, Kushvaha SS, Kumar M, Kumar MS, Gupta G, Kandpal K, Kumar P. Flexible perylenediimide/GaN organic-inorganic hybrid system with exciting optical and interfacial properties. Scientific Reports. 10: 10480. PMID 32591627 DOI: 10.1038/s41598-020-67531-3 |
0.332 |
|
2018 |
Gupta G, Ahmadi E, Suntrup DJ, Mishra UK. Establishment of design space for high current gain in III-N hot electron transistors Semiconductor Science and Technology. 33: 15018. DOI: 10.1088/1361-6641/Aa89Dd |
0.809 |
|
2016 |
Tahhan M, Nedy J, Chan SH, Lund C, Li H, Gupta G, Keller S, Mishra U. Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4944054 |
0.724 |
|
2016 |
Laurent MA, Gupta G, Suntrup DJ, DenBaars SP, Mishra UK. Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4941531 |
0.775 |
|
2016 |
Gupta C, Enatsu Y, Gupta G, Keller S, Mishra UK. High breakdown voltage p-n diodes on GaN on sapphire by MOCVD Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532554 |
0.761 |
|
2015 |
Soligo R, Chowdhury S, Gupta G, Mishra U, Saraniti M. The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor Ieee Electron Device Letters. 36: 669-671. DOI: 10.1109/Led.2015.2436922 |
0.695 |
|
2015 |
Gupta G, Ahmadi E, Hestroffer K, Acuna E, Mishra UK. Common emitter current gain >1 in III-N hot electron transistors with 7-nm GaN/InGaN base Ieee Electron Device Letters. 36: 439-441. DOI: 10.1109/Led.2015.2416345 |
0.811 |
|
2015 |
Gupta G, Laurent M, Li H, Suntrup DJ, Acuna E, Keller S, Mishra UK. Design space of III-N hot electron transistors using AlGaN and InGaN polarization-dipole barriers Ieee Electron Device Letters. 36: 23-25. DOI: 10.1109/Led.2014.2373375 |
0.786 |
|
2015 |
Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105003 |
0.812 |
|
2015 |
Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Barrier height fluctuations in InGaN polarization dipole diodes Applied Physics Letters. 107. DOI: 10.1063/1.4934876 |
0.773 |
|
2014 |
Gupta G, Laurent M, Lu J, Keller S, Mishra UK. Design of polarization-dipole-induced isotype heterojunction diodes for use in III-N hot electron transistors Applied Physics Express. 7. DOI: 10.7567/Apex.7.014102 |
0.82 |
|
2014 |
Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measurement of the hot electron mean free path and the momentum relaxation rate in GaN Applied Physics Letters. 105. DOI: 10.1063/1.4905367 |
0.801 |
|
2014 |
Laurent MA, Gupta G, Wienecke S, Muqtadir AA, Keller S, Denbaars SP, Mishra UK. Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4901834 |
0.793 |
|
2013 |
Dasgupta S, Lu J, Nidhi, Raman A, Hurni C, Gupta G, Speck JS, Mishra UK. Estimation of hot electron relaxation time in GaN using hot electron transistors Applied Physics Express. 6. DOI: 10.7567/Apex.6.034002 |
0.775 |
|
2013 |
Lal S, Lu J, Gupta G, Thibeault BJ, Denbaars SP, Mishra UK. Impact of gate-aperture overlap on the channel-pinch off in ingaas/ingan-based bonded aperture vertical electron transistor Ieee Electron Device Letters. 34: 1500-1502. DOI: 10.1109/Led.2013.2286954 |
0.768 |
|
2013 |
Lu J, Denninghoff D, Yeluri R, Lal S, Gupta G, Laurent M, Keller S, Denbaars SP, Mishra UK. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4809997 |
0.728 |
|
2010 |
Kolluri S, Keller S, Brown D, Gupta G, Mishra UK, DenBaars SP, Rajan S. Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [J. Appl. Phys. 108, 074502 (2010)] Journal of Applied Physics. 108: 119902. DOI: 10.1063/1.3514587 |
0.799 |
|
2010 |
Kolluri S, Keller S, Brown D, Gupta G, Rajan S, DenBaars SP, Mishra UK. Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates Journal of Applied Physics. 108: 74502. DOI: 10.1063/1.3488641 |
0.808 |
|
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