Year |
Citation |
Score |
2008 |
Lai Q, Li Z, Zhang L, Li X, Stickle WF, Zhu Z, Gu Z, Kamins TI, Williams RS, Chen Y. An organic/Si nanowire hybrid field configurable transistor. Nano Letters. 8: 876-80. PMID 18266332 DOI: 10.1021/Nl073112Y |
0.308 |
|
2002 |
Chen Y, Ohlberg DAA, Williams RS. Nanowires of four epitaxial hexagonal silicides grown on Si(001) Journal of Applied Physics. 91: 3213-3218. DOI: 10.1063/1.1428807 |
0.301 |
|
2001 |
Chen Y, Ohlberg DA, Stanley Williams R. Epitaxial growth of erbium silicide nanowires on silicon(001) Materials Science and Engineering: B. 87: 222-226. DOI: 10.1016/S0921-5107(01)00734-6 |
0.314 |
|
2000 |
Chen Y, Ohlberg DAA, Medeiros-Ribeiro G, Chang YA, Williams RS. Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) Applied Physics Letters. 76: 4004-4006. DOI: 10.1063/1.126848 |
0.302 |
|
1997 |
Liliental-Weber Z, Chen Y, Ruvimov S, Washburn J. Formation mechanism of nanotubes in GaN Physical Review Letters. 79: 2835-2838. DOI: 10.1103/Physrevlett.79.2835 |
0.483 |
|
1996 |
Chen Y, Washburn J. Structural Transition in Large-Lattice-Mismatch Heteroepitaxy Physical Review Letters. 77: 4046-4049. PMID 10062374 DOI: 10.1103/Physrevlett.77.4046 |
0.481 |
|
1996 |
Liliental-Weber Z, Ruvimov S, Suski T, Ager JW, Swider W, Chen Y, Kisielowski C, Washburn J, Akasaki I, Amano H, Kuo C, Imler W. Effect of Si Doping on The Structure of Gan Mrs Proceedings. 423: 487. DOI: 10.1557/Proc-423-487 |
0.495 |
|
1996 |
Liliental-Weber Z, Kisielowski C, Ruvimov S, Chen Y, Washburn J, Grzegory I, Bockowski M, Jun J, Porowski S. Structural characterization of bulk GaN crystals grown under high hydrostatic pressure Journal of Electronic Materials. 25: 1545-1550. DOI: 10.1007/Bf02655397 |
0.514 |
|
1995 |
Liliental-Weber Z, Ruvimov S, Kisielowski C, Chen Y, Swider W, Washburn J, Newman N, Gassmann A, Liu X, Schloss L, Weber E, Grzegory I, Bockowski M, Jun J, Suski T, et al. Structural Defects in Heteroepitaxial and Homoepitaxial GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-351 |
0.524 |
|
1993 |
Chen Y, Zakharov ND, Werner P, Liliental‐Weber Z, Washburn J, Klem JF, Tsao JY. Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates Applied Physics Letters. 62: 1536-1538. DOI: 10.1063/1.108632 |
0.492 |
|
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