| Year |
Citation |
Score |
| 2011 |
Reiche M, Moutanabbir O, Hoentschel J, Hähnel A, Flachowsky S, Gösele U, Horstmann M. Strained Silicon Nanodevices Mechanical Stress On the Nanoscale: Simulation, Material Systems and Characterization Techniques. 131-150. DOI: 10.1002/9783527639540.ch6 |
0.557 |
|
| 2010 |
Lee J, Berger A, Cagnon L, Gösele U, Nielsch K, Lee J. Disproportionation of thermoelectric bismuth telluride nanowires as a result of the annealing process. Physical Chemistry Chemical Physics : Pccp. 12: 15247-50. PMID 21046022 DOI: 10.1039/C0Cp00749H |
0.59 |
|
| 2010 |
Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Gösele U, Bachmann J, Nielsch K. The transition between conformal atomic layer epitaxy and nanowire growth. Journal of the American Chemical Society. 132: 7592-4. PMID 20469861 DOI: 10.1021/Ja102590V |
0.781 |
|
| 2010 |
Qin Y, Kim Y, Zhang L, Lee SM, Yang RB, Pan A, Mathwig K, Alexe M, Gösele U, Knez M. Preparation and elastic properties of helical nanotubes obtained by atomic layer deposition with carbon nanocoils as templates Small. 6: 910-914. PMID 20397206 DOI: 10.1002/smll.200902159 |
0.656 |
|
| 2010 |
Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Gösele U, Motohashi M, Tarun A, Hayazawa N, Kawata S. Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide. Nanotechnology. 21: 134013. PMID 20208119 DOI: 10.1088/0957-4484/21/13/134013 |
0.608 |
|
| 2010 |
Moutanabbir O, Gösele U. Heterogeneous integration of compound semiconductors Annual Review of Materials Research. 40: 469-500. DOI: 10.1146/Annurev-Matsci-070909-104448 |
0.582 |
|
| 2010 |
Moutanabbir O, Scholz R, Gösele U, Guittoum A, Jungmann M, Butterling M, Krause-Rehberg R, Anwand W, Egger W, Sperr P. Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115205 |
0.558 |
|
| 2010 |
Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Gösele U, Motohashi M, Tarun A, Hayazawa N, Kawata S. Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide Nanotechnology. 21. DOI: 10.1088/0957-4484/21/13/134013 |
0.589 |
|
| 2010 |
Lee J, Berger A, Cagnon L, Gösele U, Nielsch K. Disproportionation of thermoelectric bismuth telluride nanowires as a result of the annealing process Physical Chemistry Chemical Physics. 12: 15247-15250. DOI: 10.1039/c0cp00749h |
0.586 |
|
| 2010 |
Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Gösele U, Bachmann J, Nielsch K. The transition between conformal atomic layer epitaxy and nanowire growth Journal of the American Chemical Society. 132: 7592-7594. DOI: 10.1021/ja102590v |
0.776 |
|
| 2010 |
Liu L, Albrecht O, Pippel E, Nielsch K, Gösele U. A novel synthesis of ultrathin CoPt3 nanowires by dealloying larger diameter Co99Pt1 nanowires and subsequent stress-induced crack propagation Electrochemistry Communications. 12: 835-838. DOI: 10.1016/J.Elecom.2010.04.001 |
0.599 |
|
| 2010 |
Singh R, Christiansen SH, Moutanabbir O, Gösele U. The phenomenology of ion implantation-induced blistering and thin-layer splitting in compound semiconductors Journal of Electronic Materials. 39: 2177-2189. DOI: 10.1007/S11664-010-1334-X |
0.582 |
|
| 2010 |
Moutanabbir O, Gösele U. Bulk GaN ion cleaving Journal of Electronic Materials. 39: 482-488. DOI: 10.1007/S11664-010-1100-0 |
0.58 |
|
| 2010 |
Lee J, Kim Y, Cagnon L, Gösele U, Nielsch K. Power factor measurements of bismuth telluride nanowires grown by pulsed electrodeposition Physica Status Solidi - Rapid Research Letters. 4: 43-45. DOI: 10.1002/Pssr.200903368 |
0.598 |
|
| 2010 |
Singh R, Dadwal U, Scholz R, Moutanabbir O, Christiansen S, Gösele U. Study of implantation-induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 44-47. DOI: 10.1002/Pssc.200982630 |
0.57 |
|
| 2010 |
Klammer J, Bachmann J, Töllner W, Bourgault D, Cagnon L, Gösele U, Nielsch K. Electrochemical route to thermoelectric nanowires via organic electrolytes Physica Status Solidi (B) Basic Research. 247: 1384-1392. DOI: 10.1002/Pssb.200945549 |
0.731 |
|
| 2009 |
Geyer N, Huang Z, Fuhrmann B, Grimm S, Reiche M, Nguyen-Duc TK, De Boor J, Leipner HS, Werner P, Gösele U. Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching Nano Letters. 9: 3106-3110. PMID 19655719 DOI: 10.1021/nl900751g |
0.308 |
|
| 2009 |
Han H, Ji R, Park YJ, Lee SK, Le Rhun G, Alexe M, Nielsch K, Hesse D, Gösele U, Baik S. Wafer-scale arrays of epitaxial ferroelectric nanodiscs and nanorings. Nanotechnology. 20: 015301. PMID 19417246 DOI: 10.1088/0957-4484/20/1/015301 |
0.737 |
|
| 2009 |
Reiche M, Moutanabbir O, Hoentschel J, Gösele U, Flachowsky S, Horstmann M. Strained silicon devices Solid State Phenomena. 156: 61-68. DOI: 10.4028/Www.Scientific.Net/Ssp.156-158.61 |
0.561 |
|
| 2009 |
Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Naumann F, Petzold M, Gösele U. Probing the strain states in nanopatterned strained SOI Ecs Transactions. 25: 187-194. DOI: 10.1149/1.3204406 |
0.516 |
|
| 2009 |
Moutanabbir O, Senz S, Scholz R, Christiansen S, Reiche M, Avramescu A, Strauss U, Gösele U. Stress adjustment and bonding of H-implanted 2 in. Freestanding GaN wafer: The concept of double-sided splitting Electrochemical and Solid-State Letters. 12: H105-H108. DOI: 10.1149/1.3066081 |
0.56 |
|
| 2009 |
Moutanabbir O, Scholz R, Gösele U, Terreault B. Facile synthesis of highly stable a-Si by ion implantation of low-keV H isotopes Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.233202 |
0.581 |
|
| 2009 |
Han H, Ji R, Park YJ, Lee SK, Rhun GL, Alexe M, Nielsch K, Hesse D, Gösele U, Baik S. Wafer-scale arrays of epitaxial ferroelectric nanodiscs and nanorings Nanotechnology. 20. DOI: 10.1088/0957-4484/20/1/015301 |
0.568 |
|
| 2009 |
Moutanabbir O, Reiche M, Erfurth W, Naumann F, Petzold M, Gösele U. The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulator Applied Physics Letters. 94. DOI: 10.1063/1.3157134 |
0.59 |
|
| 2009 |
Lee J, Farhangfar S, Yang R, Scholz R, Alexe M, Gösele U, Nielsch K. A novel approach for fabrication of bismuth-silicon dioxide core-shell structures by atomic layer deposition Journal of Materials Chemistry. 19: 7050-7054. DOI: 10.1039/B908615C |
0.667 |
|
| 2009 |
Yang RB, Bachmann J, Reiche M, Gerlach JW, Gösele U, Nielsch K. Atomic layer deposition of antimony oxide and antimony sulfide Chemistry of Materials. 21: 2586-2588. DOI: 10.1021/Cm900623V |
0.745 |
|
| 2009 |
Moutanabbir O, Chabal YJ, Chicoine M, Christiansen S, Krause-Rehberg R, Schiettekatte F, Scholz R, Seitz O, Senz S, Süßkraut F, Gösele U. Mechanisms of ion-induced GaN thin layer splitting Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 267: 1264-1268. DOI: 10.1016/J.Nimb.2009.01.028 |
0.554 |
|
| 2009 |
Moutanabbir O, Senz S, Zhang Z, Gösele U. Synthesis of isotopically controlled metal-catalyzed silicon nanowires Nano Today. 4: 393-398. DOI: 10.1016/J.Nantod.2009.08.009 |
0.604 |
|
| 2009 |
Yang RB, Bachmann J, Pippel E, Berger A, Woltersdorf J, Gösele U, Nielsch K. Pulsed vapor-liquid-solid growth of antimony selenide and antimony sulfide nanowires Advanced Materials. 21: 3170-3174. DOI: 10.1002/Adma.200803436 |
0.694 |
|
| 2008 |
Lee J, Farhangfar S, Lee J, Cagnon L, Scholz R, Gösele U, Nielsch K. Tuning the crystallinity of thermoelectric Bi(2)Te(3) nanowire arrays grown by pulsed electrodeposition. Nanotechnology. 19: 365701. PMID 21828882 DOI: 10.1088/0957-4484/19/36/365701 |
0.605 |
|
| 2008 |
Chen X, Ji R, Dai N, Scholz R, Steinhart M, Nielsch K, Gösele U. Manipulating feature sizes in Si-based grating structures by thermal oxidation. Nanotechnology. 19: 325305. PMID 21828812 DOI: 10.1088/0957-4484/19/32/325305 |
0.583 |
|
| 2008 |
Liu LF, Lee SW, Li JB, Alexe M, Rao GH, Zhou WY, Lee JJ, Lee W, Gösele U. Enhanced ionic conductivity of AgI nanowires/AAO composites fabricated by a simple approach. Nanotechnology. 19: 495706. PMID 21730686 DOI: 10.1088/0957-4484/19/49/495706 |
0.63 |
|
| 2008 |
Schwirn K, Lee W, Hillebrand R, Steinhart M, Nielsch K, Gösele U. Self-ordered anodic aluminum oxide formed by H2SO4 hard anodization. Acs Nano. 2: 302-10. PMID 19206631 DOI: 10.1021/Nn7001322 |
0.58 |
|
| 2008 |
Huang Z, Zhang X, Reiche M, Liu L, Lee W, Shimizu T, Senz S, Gösele U. Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching. Nano Letters. 8: 3046-51. PMID 18698834 DOI: 10.1021/nl802324y |
0.309 |
|
| 2008 |
Lee W, Han H, Lotnyk A, Schubert MA, Senz S, Alexe M, Hesse D, Baik S, Gösele U. Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch-2 density. Nature Nanotechnology. 3: 402-7. PMID 18654563 DOI: 10.1038/nnano.2008.161 |
0.63 |
|
| 2008 |
Bachmann J, Zierold R, Chong YT, Hauert R, Sturm C, Schmidt-Grund R, Rheinländer B, Grundmann M, Gösele U, Nielsch K. A practical, self-catalytic, atomic layer deposition of silicon dioxide. Angewandte Chemie (International Ed. in English). 47: 6177-9. PMID 18618880 DOI: 10.1002/Anie.200800245 |
0.739 |
|
| 2008 |
Reiche M, Moutanabbir O, Himcinschi C, Christiansen S, Erfurth W, Gösele U, Mantl S, Buca D, Zhao QT, Loo R, Nguyen D, Muster F, Petzold M. Strained silicon on wafer level by wafer bonding: Materials processing, strain measurements and strain relaxation Ecs Transactions. 16: 311-320. DOI: 10.1149/1.2982883 |
0.548 |
|
| 2008 |
Moutanabbir O, Reiche M, Erfurth W, Scholz R, Gösele U. Strain relaxation in nanostructured ultra thin SSOI Proceedings - Ieee International Soi Conference. 71-72. DOI: 10.1109/SOI.2008.4656299 |
0.532 |
|
| 2008 |
Moutanabbir O, Scholz R, Senz S, Gösele U, Chicoine M, Schiettekatte F, Süßkraut F, Krause-Rehberg R. Microstructural evolution in H ion induced splitting of freestanding GaN Applied Physics Letters. 93. DOI: 10.1063/1.2955832 |
0.599 |
|
| 2008 |
Langner A, Knez M, Müller F, Gösele U. TiO2 microstructures by inversion of macroporous silicon using atomic layer deposition Applied Physics a: Materials Science and Processing. 93: 399-403. DOI: 10.1007/s00339-008-4784-8 |
0.304 |
|
| 2008 |
Himcinschi C, Singh R, Moutanabbir O, Scholz R, Reiche M, Christiansen SH, Gösele U, Zahn DRT. Etching-back of uniaxially strained silicon on insulator investigated by spectroscopic ellipsometry Physica Status Solidi (a) Applications and Materials Science. 205: 841-844. DOI: 10.1002/Pssa.200777753 |
0.623 |
|
| 2007 |
Chen X, Knez M, Berger A, Nielsch K, Gösele U, Steinhart M. Formation of titania/silica hybrid nanowires containing linear mesocage arrays by evaporation-induced block-copolymer self-assembly and atomic layer deposition. Angewandte Chemie (International Ed. in English). 46: 6829-32. PMID 17668904 DOI: 10.1002/Anie.200700923 |
0.619 |
|
| 2007 |
Bachmann J, Jing J, Knez M, Barth S, Shen H, Mathur S, Gösele U, Nielsch K. Ordered iron oxide nanotube arrays of controlled geometry and tunable magnetism by atomic layer deposition. Journal of the American Chemical Society. 129: 9554-5. PMID 17630739 DOI: 10.1021/Ja072465W |
0.738 |
|
| 2007 |
Fan HJ, Knez M, Scholz R, Hesse D, Nielsch K, Zacharias M, Gösele U. Influence of surface diffusion on the formation of hollow nanostructures induced by the Kirkendall effect: the basic concept. Nano Letters. 7: 993-7. PMID 17381161 DOI: 10.1021/Nl070026P |
0.553 |
|
| 2007 |
Kim DS, Ji R, Fan HJ, Bertram F, Scholz R, Dadgar A, Nielsch K, Krost A, Christen J, Gösele U, Zacharias M. Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays. Small (Weinheim An Der Bergstrasse, Germany). 3: 76-80. PMID 17294473 DOI: 10.1002/Smll.200600307 |
0.558 |
|
| 2007 |
Daub M, Bachmann J, Jing J, Knez M, Gösele U, Barth S, Mathur S, Escrig J, Altbir D, Nielsch K. Ferromagnetic nanostructures by atomic layer deposition: From thin films towards core-shell nanotubes Ecs Transactions. 11: 139-148. DOI: 10.1149/1.2779078 |
0.782 |
|
| 2007 |
Sommerlatte J, Cagnon L, Bourgault D, Gösele U, Nielsch K. Ordered nanowires based on V-VI materials: From synthesis in organic electrolytes to electrical characterization International Conference On Thermoelectrics, Ict, Proceedings. 5-7. DOI: 10.1109/ICT.2007.4569409 |
0.554 |
|
| 2007 |
Lee W, Nielsch K, Gösele U. Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization Nanotechnology. 18. DOI: 10.1088/0957-4484/18/47/475713 |
0.573 |
|
| 2007 |
Chen X, Ji R, Steinhart M, Milenin A, Nielsch K, Gösele U. Aligned horizontal silica nanochannels by oxidative self-sealing of patterned silicon wafers Chemistry of Materials. 19: 3-5. DOI: 10.1021/Cm062485H |
0.592 |
|
| 2007 |
González-Díaz JB, García-Martín A, Amelles G, Navas D, Vázquez M, Nielsch K, Wehrspohn RB, Gösele U. Enhanced magneto-optics and size effects in ferromagnetic nanowire arrays Advanced Materials. 19: 2643-2647. DOI: 10.1002/Adma.200602938 |
0.556 |
|
| 2006 |
Lee W, Ji R, Ross CA, Gösele U, Nielsch K. Wafer-scale Ni imprint stamps for porous alumina membranes based on interference lithography. Small (Weinheim An Der Bergstrasse, Germany). 2: 978-82. PMID 17193153 DOI: 10.1002/Smll.200600100 |
0.611 |
|
| 2006 |
Fan HJ, Lee W, Hauschild R, Alexe M, Le Rhun G, Scholz R, Dadgar A, Nielsch K, Kalt H, Krost A, Zacharias M, Gösele U. Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications. Small (Weinheim An Der Bergstrasse, Germany). 2: 561-8. PMID 17193086 DOI: 10.1002/Smll.200500331 |
0.751 |
|
| 2006 |
Lee W, Ji R, Gösele U, Nielsch K. Fast fabrication of long-range ordered porous alumina membranes by hard anodization. Nature Materials. 5: 741-7. PMID 16921361 DOI: 10.1038/Nmat1717 |
0.587 |
|
| 2006 |
Jin Fan H, Knez M, Scholz R, Nielsch K, Pippel E, Hesse D, Zacharias M, Gösele U. Monocrystalline spinel nanotube fabrication based on the Kirkendall effect. Nature Materials. 5: 627-31. PMID 16845423 DOI: 10.1038/Nmat1673 |
0.635 |
|
| 2006 |
Knez M, Kadri A, Wege C, Gösele U, Jeske H, Nielsch K. Atomic layer deposition on biological macromolecules: metal oxide coating of tobacco mosaic virus and ferritin. Nano Letters. 6: 1172-7. PMID 16771575 DOI: 10.1021/Nl060413J |
0.622 |
|
| 2006 |
Lee W, Fan HJ, Alexe M, Scholz R, Zacharias M, Nielsch K, Gösele U. Metal nanotube membranes and their lithographic applications 2006 Ieee Nanotechnology Materials and Devices Conference, Nmdc. 1: 306-307. DOI: 10.1109/NMDC.2006.4388876 |
0.541 |
|
| 2006 |
Sommerlatte J, Lee W, Scholz R, Gösele U, Bente K, Nielsch K. A nonaqueous way to thermoelectric nanowires International Conference On Thermoelectrics, Ict, Proceedings. 252-253. DOI: 10.1109/ICT.2006.331362 |
0.584 |
|
| 2006 |
Fan H, Knez M, Scholz R, Nielsch K, Pippel E, Hesse D, Gösele U, Zacharias M. Single-crystalline MgAl2O4 spinel nanotubes using a reactive and removable MgO nanowire template Nanotechnology. 17: 5157-5162. DOI: 10.1088/0957-4484/17/20/020 |
0.647 |
|
| 2006 |
Moyen E, Wulfhekel W, Lee W, Leycuras A, Nielsch K, Gösele U, Hanbücken M. Etching nano-holes in silicon carbide using catalytic platinum nano-particles Applied Physics a: Materials Science and Processing. 84: 369-371. DOI: 10.1007/S00339-006-3639-4 |
0.59 |
|
| 2006 |
Lee W, Moyen E, Wulfhekel W, Leycuras A, Nielsch K, Gösele U, Hanbücken M. Vertical nanopatterning of 6H-SiC(0001) surfaces using gold-metal nanotube membrane lithography Applied Physics a: Materials Science and Processing. 83: 361-363. DOI: 10.1007/S00339-006-3566-4 |
0.609 |
|
| 2005 |
Lee W, Scholz R, Nielsch K, Gösele U. A template-based electrochemical method for the synthesis of multisegmented metallic nanotubes. Angewandte Chemie (International Ed. in English). 44: 6050-4. PMID 16124018 DOI: 10.1002/Anie.200501341 |
0.553 |
|
| 2002 |
Wang ZK, Kuok MH, Ng SC, Lockwood DJ, Cottam MG, Nielsch K, Wehrspohn RB, Gösele U. Spin-wave quantization in ferromagnetic nickel nanowires. Physical Review Letters. 89: 027201. PMID 12097013 DOI: 10.1103/Physrevlett.89.027201 |
0.524 |
|
| 2002 |
Steinhart M, Wendorff JH, Greiner A, Wehrspohn RB, Nielsch K, Schilling J, Choi J, Gösele U. Polymer nanotubes by wetting of ordered porous templates. Science (New York, N.Y.). 296: 1997. PMID 12065828 DOI: 10.1126/Science.1071210 |
0.697 |
|
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