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joe salfi - Publications

Affiliations: 
University of British Columbia, Vancouver, Vancouver, BC, Canada 
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32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kobayashi T, Salfi J, Chua C, van der Heijden J, House MG, Culcer D, Hutchison WD, Johnson BC, McCallum JC, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Simmons MY, Rogge S. Engineering long spin coherence times of spin-orbit qubits in silicon. Nature Materials. PMID 32690913 DOI: 10.1038/S41563-020-0743-3  0.47
2020 Ng KSH, Voisin B, Johnson BC, McCallum JC, Salfi J, Rogge S. Scanned Single-Electron Probe inside a Silicon Electronic Device. Acs Nano. PMID 32510926 DOI: 10.1021/Acsnano.0C00736  0.454
2020 Bayat A, Voisin B, Buchs G, Salfi J, Rogge S, Bose S. Certification of spin-based quantum simulators Physical Review A. 101. DOI: 10.1103/Physreva.101.052344  0.425
2019 Philippopoulos P, Chesi S, Salfi J, Rogge S, Coish WA. Hole spin echo envelope modulations Physical Review B. 100: 125402. DOI: 10.1103/Physrevb.100.125402  0.431
2018 van der Heijden J, Kobayashi T, House MG, Salfi J, Barraud S, Laviéville R, Simmons MY, Rogge S. Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor. Science Advances. 4: eaat9199. PMID 30539142 DOI: 10.1126/Sciadv.Aat9199  0.463
2018 Salfi J, Voisin B, Tankasala A, Bocquel J, Usman M, Simmons MY, Hollenberg LCL, Rahman R, Rogge S. Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots Physical Review X. 8: 31049. DOI: 10.1103/Physrevx.8.031049  0.361
2018 Tankasala A, Salfi J, Bocquel J, Voisin B, Usman M, Klimeck G, Simmons MY, Hollenberg LCL, Rogge S, Rahman R. Two-electron states of a group-V donor in silicon from atomistic full configuration interactions Physical Review B. 97. DOI: 10.1103/Physrevb.97.195301  0.476
2018 Abadillo-Uriel JC, Salfi J, Hu X, Rogge S, Calderón MJ, Culcer D. Entanglement control and magic angles for acceptor qubits in Si Applied Physics Letters. 113: 012102. DOI: 10.1063/1.5036521  0.484
2017 Usman M, Voisin B, Salfi J, Rogge S, Hollenberg LCL. Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon. Nanoscale. PMID 29082402 DOI: 10.1039/C7Nr05081J  0.36
2016 Salfi J, Mol JA, Culcer D, Rogge S. Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon. Physical Review Letters. 116: 246801. PMID 27367400 DOI: 10.1103/Physrevlett.116.246801  0.478
2016 Usman M, Bocquel J, Salfi J, Voisin B, Tankasala A, Rahman R, Simmons MY, Rogge S, Hollenberg LC. Spatial metrology of dopants in silicon with exact lattice site precision. Nature Nanotechnology. PMID 27271965 DOI: 10.1038/Nnano.2016.83  0.426
2016 Salfi J, Tong M, Rogge S, Culcer D. Quantum computing with acceptor spins in silicon. Nanotechnology. 27: 244001. PMID 27171901 DOI: 10.1088/0957-4484/27/24/244001  0.488
2016 Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Quantum simulation of the Hubbard model with dopant atoms in silicon. Nature Communications. 7: 11342. PMID 27094205 DOI: 10.1038/Ncomms11342  0.44
2016 Culcer D, Salfi J, Rogge S. A single-atom spin-orbit qubit in Si(Conference Presentation) Proceedings of Spie. 9931. DOI: 10.1117/12.2231059  0.47
2016 Saraiva AL, Salfi J, Bocquel J, Voisin B, Rogge S, Capaz RB, Calderón MJ, Koiller B. Donor wave functions in Si gauged by STM images Physical Review B. 93: 45303. DOI: 10.1103/Physrevb.93.045303  0.387
2015 Usman M, Rahman R, Salfi J, Bocquel J, Voisin B, Rogge S, Klimeck G, Hollenberg LL. Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 154207. PMID 25783758 DOI: 10.1088/0953-8984/27/15/154207  0.321
2015 Voisin B, Salfi J, Bocquel J, Rahman R, Rogge S. Spatially resolved resonant tunneling on single atoms in silicon. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 154203. PMID 25782866 DOI: 10.1088/0953-8984/27/15/154203  0.431
2015 Mol JA, Salfi J, Rahman R, Hsueh Y, Miwa JA, Klimeck G, Simmons MY, Rogge S. Interface-induced heavy-hole/light-hole splitting of acceptors in silicon Applied Physics Letters. 106. DOI: 10.1063/1.4921640  0.447
2014 Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Spatially resolving valley quantum interference of a donor in silicon. Nature Materials. 13: 605-10. PMID 24705384 DOI: 10.1038/Nmat3941  0.5
2014 van der Heijden J, Salfi J, Mol JA, Verduijn J, Tettamanzi GC, Hamilton AR, Collaert N, Rogge S. Probing the spin states of a single acceptor atom. Nano Letters. 14: 1492-6. PMID 24571637 DOI: 10.1021/Nl4047015  0.442
2013 Mol JA, Salfi J, Miwa JA, Simmons MY, Rogge S. Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants Physical Review B. 87. DOI: 10.1103/Physrevb.87.245417  0.431
2013 Miwa JA, Mol JA, Salfi J, Rogge S, Simmons MY. Transport through a single donor in p-type silicon Applied Physics Letters. 103: 43106. DOI: 10.1063/1.4816439  0.364
2012 Salfi J, Nair SV, Savelyev IG, Blumin M, Ruda HE. Evidence for nonlinear screening and enhancement of scattering by a single Coulomb impurity for dielectrically confined electrons in InAs nanowires Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.235316  0.322
2011 Salfi J, Paradiso N, Roddaro S, Heun S, Nair SV, Savelyev IG, Blumin M, Beltram F, Ruda HE. Probing the gate--voltage-dependent surface potential of individual InAs nanowires using random telegraph signals. Acs Nano. 5: 2191-9. PMID 21322642 DOI: 10.1021/Nn1033967  0.343
2011 Kavanagh KL, Salfi J, Savelyev I, Blumin M, Ruda HE. Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires Applied Physics Letters. 98. DOI: 10.1063/1.3579251  0.344
2010 Salfi J, Savelyev IG, Blumin M, Nair SV, Ruda HE. Direct observation of single-charge-detection capability of nanowire field-effect transistors. Nature Nanotechnology. 5: 737-41. PMID 20852638 DOI: 10.1038/Nnano.2010.180  0.428
2010 Philipose U, Sapkota G, Salfi J, Ruda HE. Influence of growth temperature on the stoichiometry of InSb nanowires grown by vapor phase transport Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/7/075004  0.302
2010 Salfi J, Roddaro S, Ercolani D, Sorba L, Savelyev I, Blumin M, Ruda HE, Beltram F. Electronic properties of quantum dot systems realized in semiconductor nanowires Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/2/024007  0.457
2010 Li Z, Salfi J, De Souza C, Sun P, Nair SV, Ruda HE. Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition Applied Physics Letters. 97. DOI: 10.1063/1.3478555  0.326
2009 Ruda H, Salfi J, Philipose U, Saxena A, Lau KT, Tao Xu LZ, De Souza C, Aouba S, Yang S, Sun P, Nair S, Fernandes C. Transport and optical response of single nanowires Journal of Materials Science: Materials in Electronics. 20: S480-S486. DOI: 10.1007/S10854-008-9686-1  0.37
2007 Salfi J, Philipose U, Aouba S, Nair SV, Ruda HE. Electron transport in degenerate Mn-doped ZnO nanowires Applied Physics Letters. 90. DOI: 10.1063/1.2431788  0.356
2006 Salfi J, Philipose U, De Sousa CF, Aouba S, Ruda HE. Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection Applied Physics Letters. 89. DOI: 10.1063/1.2424653  0.321
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