Year |
Citation |
Score |
2009 |
Hofstetter D, Baumann E, Giorgetta FR, Théron R, Wu H, Schaff WJ, Dawlaty J, George PA, Eastman LF, Rana F, Kandaswamy PK, Leconte S, Monroy E. Photodetectors based on intersubband transitions using III-nitride superlattice structures. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 174208. PMID 21825412 DOI: 10.1088/0953-8984/21/17/174208 |
0.555 |
|
2006 |
Wang Z, Reimann K, Woerner M, Elsaesser T, Hofstetter D, Baumann E, Giorgetta FR, Wu H, Schaff WJ, Eastman LF. Ultrafast hole burning in intersubband absorption lines of GaN/AlN superlattices Applied Physics Letters. 89. DOI: 10.1063/1.2360218 |
0.442 |
|
2006 |
Cha HOY, Chen X, Wu H, Schaff WJ, Spencer MG, Eastman LF. Ohmic contact using the Si nano-interiayer for undoped-AIGaN/GaN heterostructures Journal of Electronic Materials. 35: 406-410. DOI: 10.1007/Bf02690526 |
0.637 |
|
2005 |
Baumann E, Giorgetta FR, Hofstetter D, Wu H, Schaff WJ, Eastman LF, Kirste L. Tunneling effects and intersubband absorption in AlN/GaN superlattices Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1849418 |
0.513 |
|
2005 |
Baumann E, Giorgetta FR, Hofstetter D, Wu H, Schaff WJ, Eastman LF, Kirste L. Resonant tunnelling and intersubband absorption in AlN - GaN superlattices Physica Status Solidi C: Conferences. 2: 1014-1018. DOI: 10.1002/Pssc.200460611 |
0.519 |
|
2003 |
Furis M, Cartwright AN, Wu H, Schaff WJ. Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.5 |
0.395 |
|
2003 |
Furis M, Cartwright AN, Wu H, Schaff WJ. Room-temperature ultraviolet emission from GaN/AlN multiple-quantum-well heterostructures Applied Physics Letters. 83: 3486-3488. DOI: 10.1063/1.1623335 |
0.365 |
|
2003 |
Mkhoyan KA, Silcox J, Wu H, Schaff WJ, Eastman LF. Nonuniformities in GaN/AlN quantum wells Applied Physics Letters. 83: 2668-2670. DOI: 10.1063/1.1614439 |
0.51 |
|
2003 |
Hofstetter D, Schad SS, Wu H, Schaff WJ, Eastman LF. GaN/AlN-based quantum-well infrared photodetector for 1.55 μm Applied Physics Letters. 83: 572-574. DOI: 10.1063/1.1594265 |
0.453 |
|
2002 |
Wu H, Schaff WJ, Koley G, Furis M, Cartwright AN, Mkhoyan KA, Silcox J, Henderson W, Doolittle WA, Osinsky AV. Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells Mrs Proceedings. 743: 375-380. DOI: 10.1557/Proc-743-L6.2 |
0.45 |
|
2002 |
Furis M, Chen F, Cartwright AN, Wu H, Schaff WJ. Room-Temperature Time–Resolved Photoluminescence Studies of UV Emission from GaN/AlN Quantum Wells Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L11.14 |
0.361 |
|
2001 |
Lu H, Schaff WJ, Hwang J, Wu H, Koley G, Eastman LF. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy Applied Physics Letters. 79: 1489-1491. DOI: 10.1063/1.1402649 |
0.709 |
|
2000 |
Lu H, Schaff WJ, Hwang J, Wu H, Yeo W, Pharkya A, Eastman LF. Improvement on epitaxial grown of InN by migration enhanced epitaxy Applied Physics Letters. 77: 2548-2550. DOI: 10.1063/1.1318235 |
0.645 |
|
2000 |
Schaff WJ, Wu H, Praharaj CJ, Murphy M, Eustis T, Foutz B, Ambacher O, Eastman LF. GaN/SiC heterojunction bipolar transistors Solid-State Electronics. 44: 259-264. DOI: 10.1016/S0038-1101(99)00232-4 |
0.72 |
|
1999 |
Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 840-845. DOI: 10.1557/S1092578300003501 |
0.698 |
|
1999 |
Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Smart J, Shealy JR, Eastman LF, Eustis TJ. Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures Journal of Vacuum Science & Technology B. 17: 1252-1254. DOI: 10.1116/1.590733 |
0.764 |
|
1999 |
Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Silcox J, Dimitrov R, Stutzmann M. High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 75: 3653-3655. DOI: 10.1063/1.125418 |
0.729 |
|
1998 |
Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G8.4 |
0.698 |
|
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