☰

Kartik Ganapathi, Ph.D. - Publications

Affiliations: 
2013 Electrical Engineering and Computer Sciences University of California, Berkeley, Berkeley, CA, United States 
Area:
Physical Electronics (PHY); Design, Modeling and Analysis (DMA); Energy (ENE); Scientific Computing (SCI)
Tree Info Similar researchers PubMed Report error

11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Chandrasekar H, Ganapathi KL, Bhattacharjee S, Bhat N, Nath DN. Optical-phonon-limited high-field transport in layered materials Ieee Transactions On Electron Devices. 63: 767-772. DOI: 10.1109/TED.2015.2508036  0.322
2013 Ganapathi K, Yoon Y, Lundstrom M, Salahuddin S. Ballistic I-v characteristics of short-channel graphene field-effect transistors: Analysis and optimization for analog and RF applications Ieee Transactions On Electron Devices. 60: 958-964. DOI: 10.1109/Ted.2013.2238236  0.565
2013 Mishra V, Smith S, Ganapathi K, Salahuddin S. Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit Technical Digest - International Electron Devices Meeting, Iedm. 5.6.1-5.6.4. DOI: 10.1109/IEDM.2013.6724569  0.519
2012 Ganapathi K, Lundstrom M, Salahuddin S. Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered? Device Research Conference - Conference Digest, Drc. 85-86. DOI: 10.1109/DRC.2012.6256951  0.515
2012 Ganapathi K, Salahuddin S. Zener tunneling: Congruence between semi-classical and quantum ballistic formalisms Journal of Applied Physics. 111. DOI: 10.1063/1.4729567  0.489
2011 Yoon Y, Ganapathi K, Salahuddin S. How good can monolayer MoS₂ transistors be? Nano Letters. 11: 3768-73. PMID 21790188 DOI: 10.1021/Nl2018178  0.622
2011 Ganapathi K, Salahuddin S. Heterojunction vertical band-to-band tunneling transistors for steep subthreshold swing and high on current Ieee Electron Device Letters. 32: 689-691. DOI: 10.1109/Led.2011.2112753  0.617
2011 Ganapathi K, Yoon Y, Salahuddin S. Monolayer MoS2 transistors - Ballistic performance limit analysis Device Research Conference - Conference Digest, Drc. 79-80. DOI: 10.1109/DRC.2011.5994421  0.573
2010 Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9. PMID 21068839 DOI: 10.1038/Nature09541  0.564
2010 Ganapathi K, Yoon Y, Salahuddin S. Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors Device Research Conference - Conference Digest, Drc. 57-58. DOI: 10.1109/DRC.2010.5551943  0.573
2010 Ganapathi K, Yoon Y, Salahuddin S. Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance Applied Physics Letters. 97. DOI: 10.1063/1.3466908  0.61
Show low-probability matches.