Year |
Citation |
Score |
2020 |
Chen J, Bhattarai R, Cui J, Shen X, Hoang T. Anisotropic optical properties of single SiTe nanoplates. Scientific Reports. 10: 19205. PMID 33154529 DOI: 10.1038/s41598-020-76265-1 |
0.609 |
|
2020 |
Bhattarai R, Shen X. Predicting a Novel Phase of 2D SiTe. Acs Omega. 5: 16848-16855. PMID 32685854 DOI: 10.1021/acsomega.0c02048 |
0.607 |
|
2020 |
Bhattarai R, Chen J, Hoang TB, Cui J, Shen X. Anisotropic Optical Properties of 2D Silicon Telluride Mrs Advances. 5: 1881-1889. DOI: 10.1557/Adv.2020.186 |
0.37 |
|
2020 |
Bhattarai R, Shen X. Ultra-high mechanical flexibility of 2D silicon telluride Applied Physics Letters. 116: 23101. DOI: 10.1063/1.5120533 |
0.351 |
|
2019 |
Ghimire M, Bhoyate S, Gupta RK, Shen X, Perez F, Alam J, Mishra SR. Physical Properties and Theoretical Study of NiCoO₄ (0 ≤ ≤ 1.5) Nanostructures as High-Performance Electrode Materials for Supercapacitors. Journal of Nanoscience and Nanotechnology. 19: 4481-4494. PMID 30913739 DOI: 10.1166/Jnn.2019.16644 |
0.319 |
|
2019 |
Chen J, Wu K, Shen X, Hoang TB, Cui J. Probing the dynamics of photoexcited carriers in Si2Te3 nanowires Journal of Applied Physics. 125: 24306. DOI: 10.1063/1.5053932 |
0.327 |
|
2018 |
Jiang R, Shen X, Fang J, Wang P, Zhang EX, Chen J, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle EC, Speck JS, Pantelides ST. Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 18: 364-376. DOI: 10.1109/Tdmr.2018.2847338 |
0.5 |
|
2018 |
Jayawardena A, Shen X, Mooney PM, Dhar S. Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation Semiconductor Science and Technology. 33: 65005. DOI: 10.1088/1361-6641/Aabda2 |
0.409 |
|
2017 |
Jiang R, Zhang EX, McCurdy MW, Chen J, Shen X, Wang P, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 64: 218-225. DOI: 10.1109/Tns.2016.2626962 |
0.476 |
|
2017 |
Xu S, Shen X, Hallman KA, Haglund RF, Pantelides ST. Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases Physical Review B. 95: 125105. DOI: 10.1103/Physrevb.95.125105 |
0.456 |
|
2017 |
Puzyrev YS, Shen X, Zhang CX, Hachtel J, Ni K, Choi BK, Zhang E-, Ovchinnikov O, Schrimpf RD, Fleetwood DM, Pantelides ST. Memristive devices from ZnO nanowire bundles and meshes Applied Physics Letters. 111: 153504. DOI: 10.1063/1.5008265 |
0.477 |
|
2017 |
Wu K, Sun W, Jiang Y, Chen J, Li L, Cao C, Shi S, Shen X, Cui J. Structure and photoluminescence study of silicon based two-dimensional Si2Te3 nanostructures Journal of Applied Physics. 122: 75701. DOI: 10.1063/1.4998811 |
0.333 |
|
2017 |
Aloqayli S, Ranaweera CK, Wang Z, Siam K, Kahol PK, Tripathi P, Srivastava ON, Gupta BK, Mishra SR, Perez F, Shen X, Gupta RK. Nanostructured cobalt oxide and cobalt sulfide for flexible, high performance and durable supercapacitors Energy Storage Materials. 8: 68-76. DOI: 10.1016/J.Ensm.2017.05.006 |
0.333 |
|
2016 |
Turo MJ, Shen X, Brandon NK, Castillo S, Fall AM, Pantelides ST, Macdonald JE. Dual-mode crystal-bound and X-type passivation of quantum dots. Chemical Communications (Cambridge, England). 52: 12214-12217. PMID 27711381 DOI: 10.1039/C6Cc05951A |
0.418 |
|
2016 |
Shen X, Puzyrev YS, Combs C, Pantelides ST. Variability of structural and electronic properties of bulk and monolayer Si2Te3 Applied Physics Letters. 109. DOI: 10.1063/1.4962826 |
0.519 |
|
2016 |
Jiang R, Shen X, Chen J, Duan GX, Zhang EX, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 109. DOI: 10.1063/1.4958706 |
0.537 |
|
2016 |
Leach ADP, Shen X, Faust A, Cleveland MC, La Croix AD, Banin U, Pantelides ST, Macdonald JE. Defect Luminescence from Wurtzite CuInS2 Nanocrystals: Combined Experimental and Theoretical Analysis Journal of Physical Chemistry C. 120: 5207-5212. DOI: 10.1021/Acs.Jpcc.6B00156 |
0.5 |
|
2016 |
Shen X, Pennycook TJ, Hernandez-Martin D, Pérez A, Puzyrev YS, Liu Y, te Velthuis SGE, Freeland JW, Shafer P, Zhu C, Varela M, Leon C, Sefrioui Z, Santamaria J, Pantelides ST. High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201600086 |
0.663 |
|
2015 |
Puzyrev YS, Shen X, Pantelides ST. Prediction of Giant Thermoelectric Efficiency in Crystals with Interlaced Nanostructure. Nano Letters. PMID 26691292 DOI: 10.1021/Acs.Nanolett.5B03220 |
0.479 |
|
2015 |
Shen X, Puzyrev YS, Fleetwood DM, Schrimpf RD, Pantelides ST. Quantum mechanical modeling of radiation-induced defect dynamics in electronic devices Ieee Transactions On Nuclear Science. 62: 2169-2180. DOI: 10.1109/Tns.2015.2470665 |
0.512 |
|
2015 |
Duan GX, Hatchtel J, Shen X, Zhang EX, Zhang CX, Tuttle BR, Fleetwood DM, Schrimpf RD, Reed RA, Franco J, Linten D, Mitard J, Witters L, Collaert N, Chisholm MF, et al. Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs Ieee Transactions On Device and Materials Reliability. 15: 352-358. DOI: 10.1109/Tdmr.2015.2442152 |
0.533 |
|
2015 |
Shen X, Dhar S, Pantelides ST. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices Applied Physics Letters. 106. DOI: 10.1063/1.4917528 |
0.539 |
|
2015 |
Shen X, Yin K, Puzyrev YS, Liu Y, Sun L, Li R, Pantelides ST. 2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3 Advanced Electronic Materials. 1: 1500019. DOI: 10.1002/Aelm.201500019 |
0.475 |
|
2014 |
Shen X, Hernández-Pagan EA, Zhou W, Puzyrev YS, Idrobo JC, Macdonald JE, Pennycook SJ, Pantelides ST. Interlaced crystals having a perfect Bravais lattice and complex chemical order revealed by real-space crystallography. Nature Communications. 5: 5431. PMID 25394496 DOI: 10.1038/Ncomms6431 |
0.606 |
|
2013 |
Shen X, Pantelides ST. Atomic-Scale Mechanism of Efficient Hydrogen Evolution at SiC Nanocrystal Electrodes. The Journal of Physical Chemistry Letters. 4: 100-4. PMID 26291219 DOI: 10.1021/Jz301799W |
0.468 |
|
2013 |
Shen X, Puzyrev YS, Pantelides ST. Vacancy breathing by grain boundaries - A mechanism of memristive switching in polycrystalline oxides Mrs Communications. 3: 167-170. DOI: 10.1557/Mrc.2013.32 |
0.444 |
|
2013 |
Zhang CX, Shen X, Zhang EX, Fleetwood DM, Schrimpf RD, Francis SA, Roy T, Dhar S, Ryu SH, Pantelides ST. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs Ieee Transactions On Electron Devices. 60: 2361-2367. DOI: 10.1109/Ted.2013.2263426 |
0.467 |
|
2013 |
Zhang CX, Zhang EX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs Ieee Electron Device Letters. 34: 117-119. DOI: 10.1109/Led.2012.2228161 |
0.474 |
|
2013 |
Shen X, Tuttle BR, Pantelides ST. Competing atomic and molecular mechanisms of thermal oxidation-SiC versus Si Journal of Applied Physics. 114. DOI: 10.1063/1.4815962 |
0.485 |
|
2013 |
Steel FM, Tuttle BR, Shen X, Pantelides ST. Effects of strain on the electrical properties of silicon carbide Journal of Applied Physics. 114. DOI: 10.1063/1.4812574 |
0.433 |
|
2013 |
Tuttle BR, Shen X, Pantelides ST. Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices Applied Physics Letters. 102. DOI: 10.1063/1.4798536 |
0.534 |
|
2012 |
Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Rozen J, Feldman LC, Williams JR, Xu Y, Garfunkel E. The effects of phosphorus at the SiO 2/4H-SiC interface Materials Science Forum. 717: 743-746. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.743 |
0.509 |
|
2012 |
Shen X, Pantelides ST. Oxidation-induced epilayer carbon di-interstitials as a major cause of endemically poor mobilities in 4H-SiC/SiO 2 structures Materials Science Forum. 717: 445-448. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.445 |
0.514 |
|
2012 |
Ramachandran V, Reed RA, Schrimpf RD, McMorrow D, Boos JB, King MP, Zhang EX, Vizkelethy G, Shen X, Pantelides ST. Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors Ieee Transactions On Nuclear Science. 59: 2691-2696. DOI: 10.1109/Tns.2012.2223716 |
0.47 |
|
2012 |
Zhang EX, Zhang CX, Fleetwod DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors Ieee Transactions On Device and Materials Reliability. 12: 391-398. DOI: 10.1109/Tdmr.2012.2188404 |
0.484 |
|
2012 |
Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Feldman LC, Rozen J, Williams JR. Phosphorous passivation of the SiO 2/4H-SiC interface Solid-State Electronics. 68: 103-107. DOI: 10.1016/J.Sse.2011.10.030 |
0.542 |
|
2012 |
Pantelides ST, Puzyrev Y, Shen X, Roy T, Dasgupta S, Tuttle BR, Fleetwood DM, Schrimpf RD. Reliability of III-V devices - The defects that cause the trouble Microelectronic Engineering. 90: 3-8. DOI: 10.1016/J.Mee.2011.04.019 |
0.496 |
|
2011 |
Zhang CX, Zhang EX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices Ieee Transactions On Nuclear Science. 58: 2925-2929. DOI: 10.1109/Tns.2011.2168424 |
0.488 |
|
2011 |
DasGupta S, Shen X, Schrimpf RD, Reed RA, Pantelides ST, Fleetwood DM, Bergman JI, Brar B. Degradation in InAs–AlSb HEMTs Under Hot-Carrier Stress Ieee Transactions On Electron Devices. 58: 1499-1507. DOI: 10.1109/Ted.2011.2116157 |
0.524 |
|
2011 |
Roy T, Zhang EX, Puzyrev YS, Shen X, Fleetwood DM, Schrimpf RD, Koblmueller G, Chu R, Poblenz C, Fichtenbaum N, Suh CS, Mishra UK, Speck JS, Pantelides ST. Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3662041 |
0.498 |
|
2011 |
Shen X, Zhang EX, Zhang CX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Pantelides ST. Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures Applied Physics Letters. 98: 063507. DOI: 10.1063/1.3554428 |
0.518 |
|
2011 |
Shen X, Pantelides ST. Identification of a major cause of endemically poor mobilities in SiC/ SiO2 structures Applied Physics Letters. 98. DOI: 10.1063/1.3553786 |
0.528 |
|
2010 |
Sun T, Shen X, Allen PB. Phonon quasiparticles and anharmonic perturbation theory tested by molecular dynamics on a model system Physical Review B. 82: 224304. DOI: 10.1103/Physrevb.82.224304 |
0.532 |
|
2010 |
Shen X, Oxley MP, Puzyrev Y, Tuttle BR, Duscher G, Pantelides ST. Excess carbon in silicon carbide Journal of Applied Physics. 108. DOI: 10.1063/1.3517142 |
0.482 |
|
2010 |
Shen X, Dasgupta S, Reed RA, Schrimpf RD, Fleetwood DM, Pantelides ST. Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb Journal of Applied Physics. 108. DOI: 10.1063/1.3505795 |
0.519 |
|
2010 |
Shen X, Small YA, Wang J, Allen PB, Fernandez-Serra MV, Hybertsen MS, Muckerman JT. Photocatalytic water oxidation at the GaN (101̄0)-water interface Journal of Physical Chemistry C. 114: 13695-13704. DOI: 10.1021/Jp102958S |
0.559 |
|
2009 |
Thompson M, Shen X, Allen PB. Density functional calculation of electronic structure and phonon spectra of Na 2 O Physical Review B. 79: 113108. DOI: 10.1103/Physrevb.79.113108 |
0.531 |
|
2009 |
Shen X, Allen PB, Hybertsen MS, Muckerman JT. Water Adsorption on the GaN (101̅0) Nonpolar Surface The Journal of Physical Chemistry C. 113: 3365-3368. DOI: 10.1021/Jp809499D |
0.501 |
|
2007 |
Shen X, Allen PB, Muckerman JT, Davenport JW, Zheng JC. Wire versus tube: stability of small one-dimensional ZnO nanostructures. Nano Letters. 7: 2267-71. PMID 17608442 DOI: 10.1021/Nl070788K |
0.54 |
|
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