Mingwei Huang, Ph.D. - Publications
Affiliations: | 2000 | University of Maryland, College Park, College Park, MD |
Year | Citation | Score | |||
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2007 | Huang M, Mayergoyz I, Andrei P. General adjoint approach to the physics-based noise modeling of semiconductor devices through Langevin sources Journal of Applied Physics. 101. DOI: 10.1063/1.2405725 | 0.459 | |||
2000 | Huang M, Mayergoyz ID, Goldsman N. Numerical simulation of small-signal microwave performance of 4H-SiC MESFET Solid-State Electronics. 44: 1281-1287. DOI: 10.1016/S0038-1101(00)00025-3 | 0.446 | |||
1998 | Huang M, Goldsman N, Chang C, Mayergoyz I, McGarrity JM, Woolard D. Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics Journal of Applied Physics. 84: 2065-2070. DOI: 10.1063/1.368267 | 0.479 | |||
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