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Eric J. Stewart, Ph.D. - Publications

Affiliations: 
2004 Princeton University, Princeton, NJ 
Area:
Biological & Biomedical,Energy & Environment,Materials & Devices,Nanotechnologies
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Stewart EJ, Carroll MS, Sturm JC. Boron segregation in single-crystal Si1-x-yGexC y and Si1-yCy alloys Journal of the Electrochemical Society. 152: G500-G505. DOI: 10.1149/1.1915209  0.578
2004 Stewart EJ, Carroll MS, Sturm JC. Boron segregation and electrical properties in polycrystalline Si 1-x-yGe xC y and Si 1-yC y alloys Journal of Applied Physics. 95: 4029-4035. DOI: 10.1063/1.1649452  0.542
2004 Stewart EJ, Sturm JC. Segregation of boron to polycrystalline and single-crystal Si 1-x-yGexCy and Si1-yCy layers Applied Surface Science. 224: 87-90. DOI: 10.1016/j.apsusc.2003.08.044  0.476
2003 Stewart EJ, Sturm JC. Boron segregation and out-diffusion in single-crystal Si1-yCy Materials Research Society Symposium - Proceedings. 765: 223-228.  0.336
2001 Stewart EJ, Carroll MS, Sturm JC. Boron segregation and electrical properties in polycrystalline SiGeC Materials Research Society Symposium - Proceedings. 669: J691-J696. DOI: 10.1557/Proc-669-J6.9  0.569
2001 Stewart EJ, Carroll MS, Sturm JC. Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si1-x-yGexCy gate layers Ieee Electron Device Letters. 22: 574-576. DOI: 10.1109/55.974581  0.574
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