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Chando Park - Publications

Affiliations: 
2004 Carnegie Mellon University, Pittsburgh, PA 
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Park C, Kan JJ, Ching C, Ahn J, Xue L, Wang R, Kontos A, Liang S, Bangar M, Chen H, Hassan S, Kim S, Pakala M, Kang SH. Temperature Dependence of Critical Device Parameters in 1 Gb Perpendicular Magnetic Tunnel Junction Arrays for STT-MRAM Ieee Transactions On Magnetics. 53: 1-4. DOI: 10.1109/Tmag.2016.2615816  0.352
2017 Kan JJ, Park C, Ching C, Ahn J, Xie Y, Pakala M, Kang SH. A Study on Practically Unlimited Endurance of STT-MRAM Ieee Transactions On Electron Devices. 64: 3639-3646. DOI: 10.1109/Ted.2017.2731959  0.314
2015 Kan JJ, Gottwald M, Park C, Zhu X, Kang SH. Thermally Robust Perpendicular STT-MRAM Free Layer Films Through Capping Layer Engineering Ieee Transactions On Magnetics. 51. DOI: 10.1109/Tmag.2015.2463759  0.465
2015 Gottwald M, Kan JJ, Lee K, Zhu X, Park C, Kang SH. Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM Applied Physics Letters. 106. DOI: 10.1063/1.4906600  0.406
2009 Park C, Miloslavsky L, Lim I, Oh S, Kaiser C, Leng Q, Pakala M. Influence of Boron Diffusion on Transport and Magnetic Properties in CoFeB/MgO/CoFeB Magnetic Tunnel Junction Ieee Transactions On Magnetics. 45: 3457-3459. DOI: 10.1109/Tmag.2009.2022495  0.423
2009 Park J, Moneck MT, Park C, Zhu J. Spin-transfer induced switching in nanomagnetoresistive devices composed of Co/Pt multilayers with perpendicular magnetic anisotropy Journal of Applied Physics. 105. DOI: 10.1063/1.3072822  0.343
2008 Park J, Park C, Zhu J. Interfacial Oxidation Enhanced Perpendicular Magnetic Anisotropy in Low Resistance Magnetic Tunnel Junctions Composed of Co/Pt Multilayer Electrodes Ieee Transactions On Magnetics. 44: 2577-2580. DOI: 10.1109/Tmag.2008.2003071  0.439
2008 Park J, Park C, Jeong T, Moneck MT, Nufer NT, Zhu J. Co /Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy Journal of Applied Physics. 103. DOI: 10.1063/1.2838754  0.464
2006 Wang Y, Chen W, Yang S, Shen K, Park C, Kao M, Tsai M. Interfacial and annealing effects on magnetic properties of CoFeB thin films Journal of Applied Physics. 99. DOI: 10.1063/1.2176108  0.407
2006 Zhu J(, Park C. Magnetic tunnel junctions Materials Today. 9: 36-45. DOI: 10.1016/S1369-7021(06)71693-5  0.413
2005 Park C, Zhu JG, Peng Y, Laughlin DE, White RM. Inverse magnetoresistance in magnetic tunnel junction with a plasma-oxidized Fe electrode and the effect of annealing on its transport properties Journal of Applied Physics. 97. DOI: 10.1063/1.1850332  0.428
2005 Park C, Peng Y, Zhu JG, Laughlin DE, White RM. Magnetoresistance of polycrystalline Fe 3O 4 films prepared by reactive sputtering at room temperature Journal of Applied Physics. 97. DOI: 10.1063/1.1847853  0.521
2004 Peng Y, Park C, Zhu JG, White RM, Laughlin DE. Characterization of interfacial reactions in magnetite tunnel junctions with transmission electron microscopy Journal of Applied Physics. 95: 6798-6800. DOI: 10.1063/1.1688535  0.468
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