| Year |
Citation |
Score |
| 2017 |
Pham-Cong D, Kim J, Tran VT, Kim SJ, Jeong S, Choi J, Cho CR. Electrochemical behavior of interconnected Ti2Nb10O29 nanoparticles for high-power Li-ion battery anodes Electrochimica Acta. 236: 451-459. DOI: 10.1016/J.Electacta.2017.03.203 |
0.309 |
|
| 2017 |
Pham-Cong D, Park JS, Kim JH, Kim J, Braun PV, Choi JH, Kim SJ, Jeong SY, Cho CR. Enhanced cycle stability of polypyrrole-derived nitrogen-doped carbon-coated tin oxide hollow nanofibers for lithium battery anodes Carbon. 111: 28-37. DOI: 10.1016/J.Carbon.2016.09.057 |
0.314 |
|
| 2015 |
Liu J, Li N, Goodman MD, Zhang HG, Epstein ES, Huang B, Pan Z, Kim J, Choi JH, Huang X, Liu J, Hsia KJ, Dillon SJ, Braun PV. Mechanically and chemically robust sandwich-structured C@Si@C nanotube array Li-ion battery anodes. Acs Nano. 9: 1985-94. PMID 25639798 DOI: 10.1021/Nn507003Z |
0.344 |
|
| 2014 |
Moon E, Park SW, Chung H, Lee JY, Bae C, Kim JW, Paek J, Kim H. Truncated corner cubes with near-perfect retroreflection efficiency. Applied Optics. 53: 7972-8. PMID 25607875 DOI: 10.1364/Ao.53.007972 |
0.378 |
|
| 2014 |
Park SW, Moon E, Chung H, Lee JY, Bae C, Kim JW, Kim H. Quasi-retroreflection from corner cubes with refractive free-form surfaces. Applied Optics. 53: 6605-11. PMID 25322251 DOI: 10.1364/AO.53.006605 |
0.368 |
|
| 2014 |
Cho C, Lee H, Ahn K, Jeong S, Choi J, Kim J, Cho J. Biofield-effect protein-sensor: Plasma functionalization of polyaniline, protein immobilization, and sensing mechanism Applied Physics Letters. 104: 233701. DOI: 10.1063/1.4882084 |
0.31 |
|
| 2013 |
Kim J, Lee YA, Seo H. Evolution of defect-associated subband energy states in nanocrystalline TiO2 films on si and ge substrates Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.10Md04 |
0.552 |
|
| 2013 |
Lucovsky G, Parsons G, Zeller D, Kim J. Spectroscopic detection of medium range order in device grade hydrogenated amorphous silicon Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.04Cr10 |
0.713 |
|
| 2013 |
Lucovsky G, Kim J. Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 ≥ n > 3, and TiO 2-HfO2 alloys Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4774101 |
0.489 |
|
| 2013 |
Lucovsky G, Kim J, Wu K, Zeller D. Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773923 |
0.679 |
|
| 2013 |
Lucovsky G, Kim J, Wu K, Zeller D, Papas B, Whitten JL. Non-crystalline SiO2: Processing induced pre-Existing defects associated with vacated O-atom intrinsic bonding sites Physics Procedia. 44: 99-107. DOI: 10.1016/J.Phpro.2013.04.013 |
0.7 |
|
| 2012 |
Lucovsky G, Parsons GN, Zeller D, Kim J. Spectroscopic detection of medium range order in device-grade a-Si:H: dangling bond defects, and the Staebler-Wronski Effect The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.H-4-2 |
0.622 |
|
| 2012 |
Yoon Y, Yan Y, Ostrom NP, Kim J, Rozgonyi G. Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon Applied Physics Letters. 101: 222107. DOI: 10.1063/1.4766337 |
0.349 |
|
| 2012 |
Yoon Y, Paudyal B, Kim J, Ok Y, Kulshreshtha P, Johnston S, Rozgonyi G. Publisher's Note: ``Effect of nickel contamination on high carrier lifetime n-type crystalline silicon'' [J. Appl. Phys. 111, 033702 (2012)] Journal of Applied Physics. 111: 49901. DOI: 10.1063/1.3689822 |
0.304 |
|
| 2012 |
Yoon Y, Paudyal B, Kim J, Ok YW, Kulshreshtha P, Johnston S, Rozgonyi G. Effect of nickel contamination on high carrier lifetime n-type crystalline silicon Journal of Applied Physics. 111. DOI: 10.1063/1.3680880 |
0.318 |
|
| 2011 |
Lucovsky G, Kim J. Remote plasma processing of sapphire substrates for deposition of TiN and TiO2. Journal of Nanoscience and Nanotechnology. 11: 7962-8. PMID 22097513 DOI: 10.1166/Jnn.2011.5089 |
0.53 |
|
| 2011 |
Seo H, Baker LR, Hervier A, Kim J, Whitten JL, Somorjai GA. Generation of highly n-type titanium oxide using plasma fluorine insertion. Nano Letters. 11: 751-6. PMID 21175210 DOI: 10.1021/Nl1039378 |
0.497 |
|
| 2011 |
Lucovsky G, Kim J, Wu K, Zeller D, Papas B, Whitten JL. Processing Induced Pre-Existing Vacated (Empty) O-atom Defect Sites in Remote Plasma Deposited GeO 2 and SiO 2 Gate Dielectrics The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.M-2-3 |
0.381 |
|
| 2011 |
Lucovsky G, Kim J. Remote plasma processing of sapphire substrates for deposition of TiN and TiO 2 Journal of Nanoscience and Nanotechnology. 11: 7962-7968. DOI: 10.1166/jnn.2011.5089 |
0.424 |
|
| 2010 |
Seo H, Cho Y, Kim J, bobade SM, Park K, Lee J, Choi D. Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature Applied Physics Letters. 96: 222101. DOI: 10.1063/1.3429586 |
0.507 |
|
| 2006 |
Kim S, Kim JY, Kim J, Choi J, Kang H, Bae C, Jeon H. Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2149210 |
0.547 |
|
| 2006 |
Choi J, Kim S, Kim J, Kang H, Jeon H, Bae C. Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods Journal of Vacuum Science and Technology. 24: 900-907. DOI: 10.1116/1.2198865 |
0.579 |
|
| 2006 |
Choi J, Kim S, Kim J, Kang H, Jeon H, Bae C. Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates Journal of Vacuum Science and Technology. 24: 678-681. DOI: 10.1116/1.2194029 |
0.59 |
|
| 2006 |
Kim S, Kim J, Choi J, Kang H, Jeon H, Bae C. Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma Journal of Vacuum Science & Technology B. 24: 1088-1093. DOI: 10.1116/1.2188405 |
0.571 |
|
| 2005 |
Won Y, Park S, Koo J, Kim S, Kim J, Jeon H. Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method Applied Physics Letters. 87: 262901. DOI: 10.1063/1.2150250 |
0.408 |
|
| 2005 |
Park M, Koo J, Kim J, Jeon H, Bae C, Krug C. Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition Applied Physics Letters. 86: 252110. DOI: 10.1063/1.1944206 |
0.544 |
|
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