☰

Brianna Klein, Ph.D. - Publications

Affiliations: 
2014 Electrical Engineering University of New Mexico, Albuquerque, NM, United States 
Area:
Infrared imaging
Tree Info Similar researchers PubMed Report error

41 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Douglas EA, Klein B, Allerman AA, Baca AG, Fortune T, Armstrong AM. Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate Journal of Vacuum Science & Technology B. 37: 021208. DOI: 10.1116/1.5066327  0.345
2019 Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors Ieee Transactions On Semiconductor Manufacturing. 32: 473-477. DOI: 10.1109/Tsm.2019.2932074  0.3
2018 Armstrong AM, Klein BA, Colon A, Allerman AA, Douglas EA, Baca AG, Fortune TR, Abate VM, Bajaj S, Rajan S. Ultra-wide band gap AlGaN polarization-doped field effect transistor Japanese Journal of Applied Physics. 57: 074103. DOI: 10.7567/Jjap.57.074103  0.312
2018 Armstrong AM, Klein B, Allerman AA, Douglas EA, Baca AG, Crawford MH, Pickrell GW, Sanchez CA. Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors Journal of Applied Physics. 123: 114502. DOI: 10.1063/1.4997605  0.316
2016 Zamiri M, Anwar F, Klein BA, Rasoulof A, Dawson NM, Schuler-Sandy T, Deneke CF, Ferreira SO, Cavallo F, Krishna S. Antimonide-based membranes synthesis integration and strain engineering. Proceedings of the National Academy of Sciences of the United States of America. PMID 27986953 DOI: 10.1073/Pnas.1615645114  0.452
2016 Zamiri M, Klein B, Schuler T, Myers S, Cavallo F, Krishna S. Indium-bump-free antimonide superlattice membrane detectors on a silicon substrates Proceedings of Spie. 9819. DOI: 10.1117/12.2224236  0.41
2016 Zamiri M, Klein B, Schuler-Sandy T, Myers S, Dahiya V, Cavallo F, Krishna S. Indium-bump-free antimonide superlattice membrane detectors on silicon substrates Applied Physics Letters. 108. DOI: 10.1063/1.4943248  0.558
2015 Kim HS, Myers S, Klein B, Kazemi A, Krishna S, Kim JO, Lee SJ. Dark current improvement of the type-II InAs / GaSb superlattice photodetectors by using a gate bias control Journal of the Korean Physical Society. 66: 535-538. DOI: 10.3938/Jkps.66.535  0.697
2015 Malone MC, Morath CP, Fahey S, Klein B, Cowan VM, Krishna S. Progress towards vertical transport study of proton-irradiated InAs/GaSb type-II strained-layer superlattice materials for space-based infrared detectors using magnetoresistance measurements Proceedings of Spie - the International Society For Optical Engineering. 9616. DOI: 10.1117/12.2188405  0.596
2015 Schuler-Sandy T, Klein B, Casias L, Mathews S, Kadlec C, Tian Z, Plis E, Myers S, Krishna S. Growth of InAs-InAsSb SLS through the use of digital alloys Journal of Crystal Growth. 425: 29-32. DOI: 10.1016/J.Jcrysgro.2015.02.096  0.533
2015 Klein B, Hains C, Taghipour Z, Plis E, Krishna S. Photocapacitance study of GaSb: In, As for defect analysis in InAs/GaSb type-II strained layer superlattices Infrared Physics and Technology. 70: 40-43. DOI: 10.1016/J.Infrared.2014.11.009  0.534
2015 Klein B, Artyushkova K, Plis E, Jamus A, Maji S, Casias L, Kutty MN, Krishna S. Post-etching mesa surface composition investigation of InAs/GaSb type-II strained layer superlattices using XPS characterization Infrared Physics and Technology. 70: 66-69. DOI: 10.1016/J.Infrared.2014.10.010  0.496
2014 Kazemi A, He X, Ghasemi J, Alaie SH, Dawson NM, Klein B, Kiesow K, Wozniak D, Habteyes T, Brueck SRJ, Krishna S. Graphene nano-objects tailored by interference lithography Proceedings of Spie - the International Society For Optical Engineering. 9168. DOI: 10.1117/12.2060003  0.423
2014 Acosta L, Klein B, Tian ZB, Frantz E, Myers S, Gautam N, Schuler-Sandy T, Plis E, Krishna S. Investigation of quantum efficiency in mid-wave infrared (MWIR) InAs/GaSb type-II strained layer superlattice (T2SL) detectors Proceedings of Spie - the International Society For Optical Engineering. 8996. DOI: 10.1117/12.2039797  0.634
2014 Klein B, Gautam N, Plis E, Schuler-Sandy T, Rotter TJ, Krishna S, Connelly BC, Metcalfe GD, Shen P, Wraback M. Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4862085  0.7
2013 Tian ZB, Schuler-Sandy T, Godoy SE, Kim HS, Montoya J, Myers S, Klein B, Plis E, Krishna S. Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations Proceedings of Spie - the International Society For Optical Engineering. 8704. DOI: 10.1117/12.2016125  0.718
2013 Plis E, Klein B, Myers S, Gautam N, Rotter TJ, Dawson RL, Krishna S, Lee SJ, Kim YH. Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4798650  0.759
2013 Umana-Membreno GA, Klein B, Smith EPG, Antoszewski J, Plis E, Johnson SM, Krishna S, Rhiger DR, Faraone L. Electron transport in InAsSb-based nBn photodetector structures Ieee Transactions On Electron Devices. 60: 510-512. DOI: 10.1109/Ted.2012.2228658  0.519
2013 Plis E, Klein B, Myers S, Gautam N, Smith EP, Krishna S. High operating temperature midwave infrared InAs/GaSb superlattice photodetectors on (111) GaSb substrates Ieee Electron Device Letters. 34: 426-428. DOI: 10.1109/Led.2012.2236534  0.765
2013 Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger DR, Kim HS, Tian ZB, Krishna S. Barrier engineered infrared photodetectors based on type-ii inas/gasb strained layer superlattices Ieee Journal of Quantum Electronics. 49: 211-217. DOI: 10.1109/Jqe.2012.2236643  0.818
2013 Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger D, Plis E, Kutty MN, Henry N, Schuler-Sandy T, Krishna S. Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices Infrared Physics and Technology. 59: 72-77. DOI: 10.1016/J.Infrared.2012.12.017  0.813
2013 Plis E, Naydenkov M, Myers S, Klein B, Gautam N, Krishna SS, Smith EP, Johnson S, Krishna S. Dual-band pBp detectors based on InAs/GaSb strained layer superlattices Infrared Physics and Technology. 59: 28-31. DOI: 10.1016/J.Infrared.2012.12.005  0.741
2013 Klein B, Montoya J, Gautam N, Krishna S. Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal Applied Physics a: Materials Science and Processing. 111: 671-674. DOI: 10.1007/S00339-012-7293-8  0.665
2013 Plis E, Klein B, Myers S, Gautam N, Krishna S. (111) InAs/GaSb type-II strained layer superlattice material for high operating temperature detection Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 748-751. DOI: 10.1002/Pssc.201200605  0.766
2012 Umana-Membreno GA, Kala H, Klein B, Antoszewski J, Gautam N, Kutty MN, Plis E, Krishna S, Faraone L. Electronic transport in InAs/GaSb type-II superlattices for long wavelength infrared focal plane array applications Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919767  0.703
2012 Myers S, Klein B, Plis E, Gautam N, Morath C, Cowan V, Krishna S. Photoconductive gain in barrier heterostructure infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919648  0.736
2012 Klein B, Gautam N, Myers S, Krishna S. Temperature-dependent absorption derivative on InAs/GaSb Type II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919616  0.704
2012 Barve AV, Sengupta S, Kim JO, Montoya J, Klein B, Shirazi MA, Zamiri M, Sharma YD, Adhikary S, Godoy SE, Jang WY, Fiorante GRC, Chakrabarti S, Krishna S. Barrier selection rules for quantum dots-in-a-well infrared photodetector Ieee Journal of Quantum Electronics. 48: 1243-1251. DOI: 10.1109/Jqe.2012.2208621  0.757
2012 Umana-Membreno GA, Klein B, Kala H, Antoszewski J, Gautam N, Kutty MN, Plis E, Krishna S, Faraone L. Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices Applied Physics Letters. 101. DOI: 10.1063/1.4772954  0.689
2012 Schuler-Sandy T, Myers S, Klein B, Gautam N, Ahirwar P, Tian ZB, Rotter T, Balakrishnan G, Plis E, Krishna S. Gallium free type II InAs/InAs xSb 1-x superlattice photodetectors Applied Physics Letters. 101. DOI: 10.1063/1.4745926  0.741
2012 Gautam N, Myers S, Barve AV, Klein B, Smith EP, Rhiger DR, Dawson LR, Krishna S. High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice Applied Physics Letters. 101. DOI: 10.1063/1.4733660  0.816
2011 Myers S, Plis E, Morath C, Cowan V, Gautam N, Klein B, Kutty MN, Naydenkov M, Schuler-Sandy T, Krishna S. Comparison of superlattice based dual color nBn and pBp infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 8155. DOI: 10.1117/12.894986  0.734
2011 Plis EA, Gautam N, Kutty MN, Myers S, Klein B, Schuler-Sandy T, Naydenkov M, Krishna S. Performance of long-wave infrared InAs/GaSb strained layer superlattice detectors for the space applications Proceedings of Spie - the International Society For Optical Engineering. 8164. DOI: 10.1117/12.893706  0.753
2011 Plis E, Klein B, Gautam N, Myers S, Kutty MN, Naydenkov M, Krishna S. Performance optimization of long-wave infrared detectors based on InAs/GaSb strained layer superlattices Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.885856  0.721
2011 Umana-Membreno GA, Klein B, Kala H, Antoszewski J, Gautam G, Kutty MN, Plis E, Dell JM, Krishna S, Faraone L. Vertical transport in InAs/GaSb type-II strained-layer superlattices for infrared focal plane array applications Proceedings of Spie. 8012: 1-6. DOI: 10.1117/12.883755  0.457
2011 Gautam N, Barve AV, Myers S, Klein B, Plis E, Naydenkov M, Kutty MN, Schuler-Sandy T, Krishna S. Polarization selective interband transitions in type-II InAs/GaSb superlattices Ieee Photonic Society 24th Annual Meeting, Pho 2011. 33-34. DOI: 10.1109/Pho.2011.6110411  0.748
2011 Klein B, Plis E, Kutty MN, Gautam N, Albrecht A, Myers S, Krishna S. Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors Journal of Physics D: Applied Physics. 44: 075102. DOI: 10.1088/0022-3727/44/7/075102  0.697
2011 Gautam N, Kim H, Myers S, Plis E, Kutty M, Naydenkov M, Klein B, Dawson L, Krishna S. Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection Infrared Physics & Technology. 54: 273-277. DOI: 10.1016/J.Infrared.2010.12.028  0.774
2010 Myers SA, Khoshakhlagh A, Mailfert J, Wanninkhof P, Plis E, Kutty MN, Kim HS, Gautam N, Klein B, Smith EPG, Krishna S. Performance of InAsSb-based infrared detectors with nBn design Proceedings of Spie. 7808: 780805. DOI: 10.1117/12.862295  0.772
2010 Khoshakhlagh A, Myers S, Plis E, Kutty MN, Klein B, Gautam N, Kim H, Smith EPG, Rhiger D, Johnson SM, Krishna S. Mid-wavelength InAsSb detectors based on nBn design Proceedings of Spie. 7660. DOI: 10.1117/12.850428  0.781
2010 Klein B. Title: Temperature-dependent behavior of InAsSb and InAs/GaSb strained layer superlattice infared photodetectors Photonics. 639-640. DOI: 10.1109/Photonics.2010.5699050  0.517
Show low-probability matches.