Byeung C. Kim, Ph.D. - Publications
Affiliations: | 2008 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2009 | Kim BC, Capano MA. 3C-SiC on Si substrates using pendeo-epitaxial growth Materials Science Forum. 600: 219-222. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.219 | 0.602 | |||
2009 | Kim BC, Coy J, Kim S, Capano MA. Heteroepitaxial 3C-SiC on Si with various carbonization process conditions Journal of Electronic Materials. 38: 581-585. DOI: 10.1007/S11664-008-0614-1 | 0.603 | |||
2008 | Kim BC, Capano MA. Structural and morphological investigation of pendeo-epitaxy 3C-SiC on Si substrates Journal of Electronic Materials. 37: 681-684. DOI: 10.1007/S11664-007-0294-2 | 0.634 | |||
2006 | Capano MA, Smith AR, Kim BC, Kvam EP, Tsoi S, Ramdas AK, Cooper JA. Structural defects and critical electric field in 3C-SiC Materials Science Forum. 527: 431-434. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.431 | 0.621 | |||
2006 | Capano MA, Kim BC, Smith AR, Kvam EP, Tsoi S, Ramdas AK. Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy Journal of Applied Physics. 100. DOI: 10.1063/1.2357842 | 0.607 | |||
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