| Year |
Citation |
Score |
| 2020 |
Zhou Y, Maleski K, Anasori B, Thostenson JO, Pang Y, Feng Y, Zeng K, Parker CB, Zauscher S, Gogotsi Y, Glass JT, Cao C. Ti3C2Tx MXene-Reduced Graphene Oxide Composite Electrodes for Stretchable Supercapacitors. Acs Nano. PMID 32049485 DOI: 10.1021/Acsnano.9B10066 |
0.356 |
|
| 2020 |
Vyas R, Herr PJ, Aloui T, Horvath K, Kirley MP, Parker CB, Keil AD, Carlson JB, Keogh J, Sperline RP, Denton MB, Sartorelli ML, Stoner BR, Gehm ME, Glass JT, et al. Comparison of thermionic filament and carbon nanotube field emitter-based electron ionization sources in cycloidal coded aperture mass analyzers International Journal of Mass Spectrometry. 457: 116415. DOI: 10.1016/J.Ijms.2020.116415 |
0.316 |
|
| 2019 |
Raut AS, Parker CB, Klem EJD, Stoner BR, Deshusses MA, Glass JT. Reduction in energy for electrochemical disinfection of in urine simulant. Journal of Applied Electrochemistry. 49: 443-453. PMID 31031416 DOI: 10.1007/S10800-019-01292-4 |
0.682 |
|
| 2019 |
Cao C, Zhou Y, Ubnoske S, Zang J, Cao Y, Henry P, Parker CB, Glass JT. Carbon Nanotubes: Highly Stretchable Supercapacitors via Crumpled Vertically Aligned Carbon Nanotube Forests (Adv. Energy Mater. 22/2019) Advanced Energy Materials. 9: 1970082. DOI: 10.1002/Aenm.201970082 |
0.339 |
|
| 2019 |
Cao C, Zhou Y, Ubnoske S, Zang J, Cao Y, Henry P, Parker CB, Glass JT. Highly Stretchable Supercapacitors via Crumpled Vertically Aligned Carbon Nanotube Forests Advanced Energy Materials. 9: 1900618. DOI: 10.1002/Aenm.201900618 |
0.327 |
|
| 2018 |
Thostenson JO, Mourouvin R, Hawkins BT, Ngaboyamahina E, Sellgren KL, Parker CB, Deshusses MA, Stoner BR, Glass JT. Improved blackwater disinfection using potentiodynamic methods with oxidized boron-doped diamond electrodes. Water Research. 140: 191-199. PMID 29715643 DOI: 10.1016/J.Watres.2018.04.022 |
0.353 |
|
| 2018 |
Teymur B, Zhou Y, Ngaboyamahina E, Glass JT, Mitzi DB. Solution-Processed Earth-Abundant Cu2BaSn(S,Se)4 Solar Absorber Using a Low-Toxicity Solvent Chemistry of Materials. 30: 6116-6123. DOI: 10.1021/Acs.Chemmater.8B02556 |
0.349 |
|
| 2018 |
Han Q, Ding J, Bai Y, Li T, Ma J, Chen Y, Zhou Y, Liu J, Ge Q, Chen J, Glass JT, Therien MJ, Liu J, Mitzi DB, Hu J. Carrier Dynamics Engineering for High-Performance Electron-Transport-Layer-free Perovskite Photovoltaics Chem. 4: 2405-2417. DOI: 10.1016/J.Chempr.2018.08.004 |
0.318 |
|
| 2017 |
Thostenson JO, Ngaboyamahina E, Sellgren KL, Hawkins BT, Piascik JR, Klem EJD, Parker CB, Deshusses MA, Stoner BR, Glass JT. Enhanced H2O2 Production at Reductive Potentials from Oxidized Boron-Doped Ultrananocrystalline Diamond Electrodes. Acs Applied Materials & Interfaces. PMID 28471651 DOI: 10.1021/Acsami.7B01614 |
0.347 |
|
| 2017 |
Kirley MP, Aloui T, Glass JT. Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography Applied Physics Letters. 110: 233109. DOI: 10.1063/1.4984955 |
0.311 |
|
| 2017 |
Zhou Y, Shin D, Ngaboyamahina E, Han Q, Parker CB, Mitzi DB, Glass JT. Efficient and Stable Pt/TiO2/CdS/Cu2BaSn(S,Se)4 Photocathode for Water Electrolysis Applications Acs Energy Letters. 3: 177-183. DOI: 10.1021/Acsenergylett.7B01062 |
0.3 |
|
| 2017 |
Feng Y, Ngaboyamahina E, Marusak KE, Cao Y, You L, Glass JT, Zauscher S. Hybrid (Organic/Inorganic) Electrodes from Bacterially Precipitated CdS for PEC/Storage Applications The Journal of Physical Chemistry C. 121: 3734-3743. DOI: 10.1021/Acs.Jpcc.6B11387 |
0.302 |
|
| 2017 |
Radauscher EJ, Parker CB, Gilchrist KH, Di Dona S, Russell ZE, Hall SD, Carlson JB, Grego S, Edwards SJ, Sperline RP, Denton MB, Stoner BR, Glass JT, Amsden JJ. A miniature electron ionization source fabricated using microelectromechanical systems (MEMS) with integrated carbon nanotube (CNT) field emission cathodes and low-temperature co-fired ceramics (LTCC) International Journal of Mass Spectrometry. 422: 162-169. DOI: 10.1016/J.Ijms.2016.10.021 |
0.332 |
|
| 2017 |
Ubnoske SM, Radauscher EJ, Meshot ER, Stoner BR, Parker CB, Glass JT. Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion Carbon. 113: 192-204. DOI: 10.1016/J.Carbon.2016.11.047 |
0.374 |
|
| 2016 |
Shin D, Ngaboyamahina E, Zhou Y, Glass JT, Mitzi DB. Synthesis and Characterization of an Earth-Abundant Cu2BaSn(S,Se)4 Chalcogenide for Photoelectrochemical Cell Application. The Journal of Physical Chemistry Letters. PMID 27790903 DOI: 10.1021/Acs.Jpclett.6B02010 |
0.376 |
|
| 2015 |
Radauscher EJ, Keil AD, Wells M, Amsden JJ, Piascik JR, Parker CB, Stoner BR, Glass JT. Chemical Ionization Mass Spectrometry Using Carbon Nanotube Field Emission Electron Sources. Journal of the American Society For Mass Spectrometry. 26: 1903-10. PMID 26133527 DOI: 10.1007/S13361-015-1212-0 |
0.329 |
|
| 2015 |
Cordova IA, Peng Q, Ferrall IL, Rieth AJ, Hoertz PG, Glass JT. Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films. Nanoscale. 7: 8584-92. PMID 25899449 DOI: 10.1039/C4Nr07377K |
0.351 |
|
| 2015 |
Ubnoske SM, Raut AS, Parker CB, Glass JT, Stoner BR. Role of nanocrystalline domain size on the electrochemical double-layer capacitance of high edge density carbon nanostructures Mrs Communications. 5: 285-290. DOI: 10.1557/Mrc.2015.13 |
0.728 |
|
| 2015 |
Sund JB, Wolter SD, Parker CB, Natishan PM, Glass JT. Diamond for biosensing: Electrochemical detection of NOx species with thiol-amine functionalized diamond Journal of the Electrochemical Society. 162: B225-B229. DOI: 10.1149/2.0691508Jes |
0.726 |
|
| 2015 |
Brown B, Cordova IA, Parker CB, Stoner BR, Glass JT. Optimization of active manganese oxide electrodeposits using graphenated carbon nanotube electrodes for supercapacitors Chemistry of Materials. 27: 2430-2438. DOI: 10.1021/Cm504519M |
0.598 |
|
| 2015 |
Ubnoske SM, Peng Q, Meshot ER, Parker CB, Glass JT. Protocol for High-Sensitivity Surface Area Measurements of Nanostructured Films Enabled by Atomic Layer Deposition of TiO2 Journal of Physical Chemistry C. 119: 26119-26127. DOI: 10.1021/Acs.Jpcc.5B07458 |
0.42 |
|
| 2014 |
Henry PA, Raut AS, Ubnoske SM, Parker CB, Glass JT. Enhanced electron transfer kinetics through hybrid graphene-carbon nanotube films. Electrochemistry Communications. 48: 103-106. PMID 25309121 DOI: 10.1016/J.Elecom.2014.08.024 |
0.746 |
|
| 2014 |
Ubnoske SM, Raut AS, Brown B, Parker CB, Stoner BR, Glass JT. Perspectives on the Growth of High Edge Density Carbon Nanostructures: Transitions from Vertically Oriented Graphene Nanosheets to Graphenated Carbon Nanotubes. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 118: 16126-16132. PMID 25089165 DOI: 10.1021/Jp502317U |
0.777 |
|
| 2014 |
Stoner BR, Brown B, Glass JT. Selected Topics on the Synthesis, Properties and Applications of Multiwalled Carbon Nanotubes. Diamond and Related Materials. 42: 49-57. PMID 24910503 DOI: 10.1016/J.Diamond.2013.12.003 |
0.61 |
|
| 2014 |
Zhang S, Kang P, Ubnoske S, Brennaman MK, Song N, House RL, Glass JT, Meyer TJ. Polyethylenimine-enhanced electrocatalytic reduction of CO₂ to formate at nitrogen-doped carbon nanomaterials. Journal of the American Chemical Society. 136: 7845-8. PMID 24779427 DOI: 10.1021/Ja5031529 |
0.319 |
|
| 2014 |
Raut AS, Cunningham GB, Parker CB, Klem EJD, Stoner BR, Deshusses MA, Glass JT. Disinfection of E. coli contaminated urine using boron-doped diamond electrodes Journal of the Electrochemical Society. 161: G81-G85. DOI: 10.1149/2.1121410Jes |
0.699 |
|
| 2014 |
Sund JB, Causey CP, Wolter SD, Parker CB, Stoner BR, Toone EJ, Glass JT. Diamond surface functionalization with biomimicry - Amine surface tether and thiol moiety for electrochemical sensors Applied Surface Science. 301: 293-299. DOI: 10.1016/J.Apsusc.2014.02.067 |
0.742 |
|
| 2013 |
Peng Q, Kalanyan B, Hoertz PG, Miller A, Kim DH, Hanson K, Alibabaei L, Liu J, Meyer TJ, Parsons GN, Glass JT. Solution-processed, antimony-doped tin oxide colloid films enable high-performance TiO2 photoanodes for water splitting Nano Letters. 13: 1481-1488. PMID 23537229 DOI: 10.1021/Nl3045525 |
0.395 |
|
| 2013 |
Raut AS, Cunningham GB, Parker CB, Klem EJD, Stoner BR, Deshusses MA, Glass JT. Electrochemical disinfection of human urine for water-free and additive-free toilets using boron-doped diamond electrodes Ecs Transactions. 53: 1-11. DOI: 10.1149/05317.0001ecst |
0.687 |
|
| 2012 |
Raut AS, Parker CB, Stoner BR, Glass JT. Effect of porosity variation on the electrochemical behavior of vertically aligned multi-walled carbon nanotubes. Electrochemistry Communications. 19: 138-141. PMID 22754296 DOI: 10.1016/J.Elecom.2012.03.021 |
0.717 |
|
| 2012 |
Parker CB, Raut AS, Brown B, Stoner BR, Glass JT. Three-dimensional arrays of graphenated carbon nanotubes Journal of Materials Research. 27: 1046-1053. DOI: 10.1557/Jmr.2012.43 |
0.777 |
|
| 2012 |
Peng Q, Lewis JS, Hoertz PG, Glass JT, Parsons GN. Atomic layer deposition for electrochemical energy generation and storage systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3672027 |
0.308 |
|
| 2012 |
Brown B, Parker CB, Stoner BR, Grill WM, Glass JT. Electrochemical charge storage properties of vertically aligned carbon nanotube films: Effects of thermal oxidation Journal of Physical Chemistry C. 116: 19526-19534. DOI: 10.1021/Jp304419A |
0.616 |
|
| 2012 |
Stoner BR, Glass JT. Carbon nanostructures: A morphological classification for charge density optimization Diamond and Related Materials. 23: 130-134. DOI: 10.1016/J.Diamond.2012.01.034 |
0.403 |
|
| 2011 |
Evans-Nguyen T, Parker CB, Hammock C, Monica AH, Adams E, Becker L, Glass JT, Cotter RJ. Carbon nanotube electron ionization source for portable mass spectrometry. Analytical Chemistry. 83: 6527-31. PMID 21718010 DOI: 10.1021/Ac200643M |
0.351 |
|
| 2011 |
Brown B, Parker CB, Stoner BR, Grill WM, Glass JT. Electrochemical charge storage properties of vertically aligned carbon nanotube films: The activation-enhanced length effect Journal of the Electrochemical Society. 158: K217-K224. DOI: 10.1149/2.093112Jes |
0.618 |
|
| 2011 |
Stoner BR, Piascik JR, Gilchrist KH, Parker CB, Glass JT. A bipolar vacuum microelectronic device Ieee Transactions On Electron Devices. 58: 3189-3194. DOI: 10.1109/Ted.2011.2157930 |
0.325 |
|
| 2011 |
Stoner BR, Raut AS, Brown B, Parker CB, Glass JT. Graphenated carbon nanotubes for enhanced electrochemical double layer capacitor performance Applied Physics Letters. 99. DOI: 10.1063/1.3657514 |
0.776 |
|
| 2011 |
Brown B, Parker CB, Stoner BR, Glass JT. Growth of vertically aligned bamboo-like carbon nanotubes from ammonia/methane precursors using a platinum catalyst Carbon. 49: 266-274. DOI: 10.1016/J.Carbon.2010.09.018 |
0.604 |
|
| 2010 |
Raut AS, Parker CB, Glass JT. A method to obtain a Ragone plot for evaluation of carbon nanotube supercapacitor electrodes Journal of Materials Research. 25: 1500-1506. DOI: 10.1557/Jmr.2010.0192 |
0.734 |
|
| 2010 |
Natarajan S, Parker CB, Piascik JR, Gilchrist KH, Stoner BR, Glass JT. Analysis of 3-panel and 4-panel microscale ionization sources Journal of Applied Physics. 107. DOI: 10.1063/1.3429220 |
0.51 |
|
| 2010 |
Wolter SD, Brown B, Parker CB, Stoner BR, Glass JT. The effect of gold on platinum oxidation in homogeneous Au-Pt electrocatalysts Applied Surface Science. 257: 1431-1436. DOI: 10.1016/J.Apsusc.2010.08.062 |
0.555 |
|
| 2009 |
Natarajan S, Gilchrist KH, Piascik JR, Parker CB, Glass JT, Stoner BR. Simulation and testing of a lateral, microfabricated electron-impact ion source Applied Physics Letters. 94. DOI: 10.1063/1.3046733 |
0.5 |
|
| 2008 |
Naskar S, Wolter SD, Bower CA, Stoner BR, Glass JT. Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study Journal of Materials Research. 23: 1433-1442. DOI: 10.1557/Jmr.2008.0176 |
0.357 |
|
| 2008 |
Brown B, Wolter SD, Stoner BR, Glass JT. Alloying effects of co-sputtered gold-platinum thin films on the oxygen reduction reaction in acidic electrolyte Ecs Transactions. 11: 49-65. DOI: 10.1149/1.2939210 |
0.589 |
|
| 2008 |
Brown B, Wolter SD, Stoner BR, Glass JT. Alloying effects of cosputtered gold-platinum thin films on the oxygen reduction reaction in acidic electrolyte Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2939210 |
0.508 |
|
| 2008 |
Zhang XD, Lewis JS, Parker CB, Glass JT, Wolter SD. Measurement of reactive and condensable gas permeation using a mass spectrometer Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1128-1137. DOI: 10.1116/1.2952453 |
0.318 |
|
| 2008 |
Natarajan S, Parker CB, Glass JT, Piascik JR, Gilchrist KH, Bower CA, Stoner BR. High voltage microelectromechanical systems platform for fully integrated, on-chip, vacuum electronic devices Applied Physics Letters. 92. DOI: 10.1063/1.2938075 |
0.532 |
|
| 2007 |
Youngsman J, Marx B, Wolter S, Glass J, Moll A. Miniature Multi-electrode Electrochemical Cell in LTCC Journal of Microelectronics and Electronic Packaging. 4: 31-36. DOI: 10.4071/1551-4897-4.1.31 |
0.313 |
|
| 2007 |
Zhang XD, Lewis JS, Wolter SD, Parker CB, Glass JT. High sensitivity permeation measurement system for "ultrabarrier" thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 1587-1593. DOI: 10.1116/1.2794075 |
0.32 |
|
| 2007 |
Bower CA, Gilchrist KH, Piascik JR, Stoner BR, Natarajan S, Parker CB, Wolter SD, Glass JT. On-chip electron-impact ion source using carbon nanotube field emitters Applied Physics Letters. 90. DOI: 10.1063/1.2715457 |
0.546 |
|
| 2007 |
Evans RD, Doll GL, Meng WJ, Mei F, Glass JT. Effects of applied substrate bias during reactive sputter deposition of nanocomposite tantalum carbide/amorphous hydrocarbon thin films Thin Solid Films. 515: 5403-5410. DOI: 10.1016/J.Tsf.2006.12.034 |
0.391 |
|
| 2006 |
Evans RD, Doll GL, Glass JT. Mechanical property development in reactively sputtered tantalum carbide/amorphous hydrocarbon thin films Journal of Materials Research. 21: 1500-1511. DOI: 10.1557/Jmr.2006.0174 |
0.355 |
|
| 2005 |
Naskar S, Bower CA, Yadon LN, Wolter SD, Stoner BR, Glass JT. Effect of growth parameters on refractive index and film composition of plasma enhanced chemical vapor deposition silicon oxynitride films Materials Research Society Symposium Proceedings. 848: 171-176. DOI: 10.1557/Proc-848-Ff3.22 |
0.392 |
|
| 2005 |
Evans RD, Howe JY, Bentley J, Doll GL, Glass JT. Influence of deposition parameters on the composition and structure of reactively sputtered nanocomposite TaC/a-C:H thin films Journal of Materials Research. 20: 2583-2596. DOI: 10.1557/Jmr.2005.0324 |
0.401 |
|
| 2005 |
Naskar S, Wolter SD, Bower CA, Stoner BR, Glass JT. Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2158022 |
0.334 |
|
| 2005 |
Yang PC, Prater JT, Liu W, Glass JT, Davis RF. The formation of epitaxial hexagonal boron nitride on nickel substrates Journal of Electronic Materials. 34: 1558-1564. DOI: 10.1007/S11664-005-0165-7 |
0.413 |
|
| 2004 |
Purswani JM, Pons AP, Glass JT, Evans RD, Cogdell JD. Effects of annealing on the mechanical and electrical properties of DC sputtered tantalum pentoxide (Ta2O5) thin films Materials Research Society Symposium Proceedings. 811: 63-68. DOI: 10.1557/Proc-811-D3.8 |
0.339 |
|
| 2004 |
Evans RD, Bentley J, More KL, Doll GL, Glass JT. Radial distribution function analyses of amorphous carbon thin films containing various levels of silicon and hydrogen Journal of Applied Physics. 96: 273-279. DOI: 10.1063/1.1760232 |
0.399 |
|
| 2002 |
Evans RD, Doll GL, Morrison PW, Bentley J, More KL, Glass JT. Relationships between the structural, chemical, and mechanical properties of Si-aC:H thin films Materials Research Society Symposium - Proceedings. 697: 261-270. DOI: 10.1557/Proc-697-P7.8 |
0.318 |
|
| 2002 |
Evans RD, Doll GL, Glass JT. Relationships between the thermal stability, friction, and wear properties of reactively sputtered Si-aC:H thin films Journal of Materials Research. 17: 2888-2896. DOI: 10.1557/Jmr.2002.0419 |
0.314 |
|
| 2002 |
Evans RD, Doll GL, Morrison PW, Bentley J, More KL, Glass JT. The effects of structure, composition, and chemical bonding on the mechanical properties of Si-aC:H thin films Surface and Coatings Technology. 157: 197-206. DOI: 10.1016/S0257-8972(02)00164-0 |
0.354 |
|
| 1998 |
Glass JT, Fox BA, Dreifus DL, Stoner BR. Diamond for electronics: Future prospects of diamond SAW devices Mrs Bulletin. 23: 49-55. DOI: 10.1557/S0883769400029377 |
0.318 |
|
| 1997 |
Angus JC, Bachmann PK, Buckley-Golder I, Fukunaga O, Glass JT, Kamo M. Preface to the Proceedings of the 7th European Conference on Diamond, Diamond-Like and Related Materials (Diamond Films '96), Tours, France, September 8–13, 1996 Diamond and Related Materials. 6. DOI: 10.1016/S0925-9635(99)80002-8 |
0.353 |
|
| 1996 |
Liu W, Yang PC, Tucker DA, Wolden CA, Davis RF, Glass JT, Prater JT, Sitar Z. TEM analysis of the observed phases during the growth of oriented diamond on nickel substrates Materials Research Society Symposium - Proceedings. 423: 457-462. DOI: 10.1557/Proc-423-457 |
0.327 |
|
| 1996 |
Goeller PT, Wang Z, Sayers DE, Glass JT, Nemanich RJ. Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source Materials Research Society Symposium - Proceedings. 402: 511-516. DOI: 10.1557/Proc-402-511 |
0.368 |
|
| 1995 |
Zhu W, Yang PC, Glass JT, Arezzo F. Diamond nucleation and growth on reactive transition-metal substrates Journal of Materials Research. 10: 1455-1460. DOI: 10.1557/Jmr.1995.1455 |
0.35 |
|
| 1995 |
Sivazlian FR, Stoner BR, Glass JT. Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition Journal of Materials Research. 10: 425-430. DOI: 10.1557/Jmr.1995.0425 |
0.37 |
|
| 1995 |
Liu J, Zhirnov VV, Myers AF, Wojak GJ, Choi WB, Hren JJ, Wolter SD, McClure MT, Stoner BR, Glass JT. Field emission characteristics of diamond coated silicon field emitters Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 422-426. DOI: 10.1116/1.587961 |
0.334 |
|
| 1995 |
Liu W, Tucker DA, Yang P, Glass JT. Nucleation of oriented diamond particles on cobalt substrates Journal of Applied Physics. 78: 1291-1296. DOI: 10.1063/1.360768 |
0.369 |
|
| 1995 |
Morrison PW, Somashekhar A, Glass JT, Prater JT. Growth of diamond films using an enclosed combustion flame Journal of Applied Physics. 78: 4144-4156. DOI: 10.1063/1.359874 |
0.374 |
|
| 1995 |
Wolter SD, Glass JT, Stoner BR. Bias induced diamond nucleation studies on refractory metal substrates Journal of Applied Physics. 77: 5119-5124. DOI: 10.1063/1.359322 |
0.314 |
|
| 1995 |
Wolter SD, McClure MT, Glass JT, Stoner BR. Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates Applied Physics Letters. 66: 3474. DOI: 10.1063/1.113483 |
0.336 |
|
| 1995 |
Wolter SD, Glass JT, Stoner BR. Investigation of the process factor space on bias-enhanced nucleation of diamond on silicon Thin Solid Films. 261: 4-11. DOI: 10.1016/S0040-6090(94)06432-6 |
0.342 |
|
| 1995 |
Bachmann PK, Buckley-Golder IM, Glass JT, Kamo M. Preface to the Proceedings of the 5th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '94), Il Ciocco, Italy, September 25-30, 1994 Diamond and Related Materials. 4. DOI: 10.1016/0925-9635(95)80012-3 |
0.313 |
|
| 1995 |
Tucker DA, Seo DK, Whangbo MH, Sivazlian FR, Stoner BR, Bozeman SP, Sowers AT, Nemanich RJ, Glass JT. Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth Surface Science. 334: 179-194. DOI: 10.1016/0039-6028(95)00469-6 |
0.368 |
|
| 1994 |
Morrison PW, Somashekhar A, Glass JT, Prater JT. Nucleation enhancement and growth of diamond films using an enclosed combustion flame Materials Research Society Symposium - Proceedings. 349: 403-408. DOI: 10.1557/Proc-349-403 |
0.368 |
|
| 1994 |
Bergman L, McClure MT, Glass JT, Nemanich RJ. Recombination processes of the broadband and 1.681 eV optical centers in diamond films Materials Research Society Symposium - Proceedings. 339: 663-668. DOI: 10.1557/Proc-339-663 |
0.323 |
|
| 1994 |
Wolter SD, Stoner BR, Yang PC, Lui W, Glass JT. Diamond nucleation studies on refractory metals and nickel Materials Research Society Symposium - Proceedings. 339: 291-296. DOI: 10.1557/Proc-339-291 |
0.335 |
|
| 1994 |
Sivazlian FR, Glass JT, Stoner BR. Investigation of the low angle grain boundaries in highly oriented diamond films via transmission electron microscopy Journal of Materials Research. 9: 2487-2489. DOI: 10.1557/Jmr.1994.2487 |
0.353 |
|
| 1994 |
Yang PC, Zhu W, Glass JT. Diamond nucleation on nickel substrates seeded with non-diamond carbon Journal of Materials Research. 9: 1063-1066. DOI: 10.1557/Jmr.1994.1063 |
0.424 |
|
| 1994 |
Bergman L, McClure MT, Glass JT, Nemanich RJ. The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films Journal of Applied Physics. 76: 3020-3027. DOI: 10.1063/1.357508 |
0.362 |
|
| 1994 |
Liu J, Zhirnov VV, Wojak GJ, Myers AF, Choi WB, Hren JJ, Wolter SD, McClure MT, Stoner BR, Glass JT. Electron emission from diamond coated silicon field emitters Applied Physics Letters. 65: 2842-2844. DOI: 10.1063/1.112538 |
0.35 |
|
| 1994 |
Bachmann PK, Buckley-Golder I, Glass JT, Kamo M. Preface to the proceedings of the 4th European conference on diamond, diamond-like and related materials (diamond films '93), Albufeira, Portugal, September 20-24, 1993 Diamond and Related Materials. 3. DOI: 10.1016/0925-9635(94)90172-4 |
0.356 |
|
| 1994 |
Wolter SD, Stoner BR, Glass JT. The effect of substrate material on bias-enhanced diamond nucleation Diamond and Related Materials. 3: 1188-1195. DOI: 10.1016/0925-9635(94)90167-8 |
0.424 |
|
| 1994 |
McClure MT, von Windheim JA, Glass JT, Prater JT. Effect of native SiO2 layer on the nucleation of diamond using a combustion flame Diamond and Related Materials. 3: 239-244. DOI: 10.1016/0925-9635(94)90086-8 |
0.313 |
|
| 1993 |
Yang PC, Zhu W, Glass JT. Nucleation of oriented diamond films on nickel substrates Journal of Materials Research. 8: 1773-1776. DOI: 10.1557/Jmr.1993.1773 |
0.41 |
|
| 1993 |
Bergman L, Stoner BR, Turner KF, Glass JT, Nemanich RJ. Microphotoluminescence and Raman scattering study of defect formation in diamond films Journal of Applied Physics. 73: 3951-3957. DOI: 10.1063/1.352858 |
0.359 |
|
| 1993 |
Zhu W, Yang PC, Glass JT. Oriented diamond films grown on nickel substrates Applied Physics Letters. 63: 1640-1642. DOI: 10.1063/1.110721 |
0.403 |
|
| 1993 |
Kohl R, Wild C, Herres N, Koidl P, Stoner BR, Glass JT. Oriented nucleation and growth of diamond films on β-SiC and Si Applied Physics Letters. 63: 1792-1794. DOI: 10.1063/1.110664 |
0.333 |
|
| 1993 |
Wolter SD, Stoner BR, Glass JT, Ellis PJ, Buhaenko DS, Jenkins CE, Southworth P. Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation Applied Physics Letters. 62: 1215-1217. DOI: 10.1063/1.108738 |
0.413 |
|
| 1993 |
Tachibana T, Glass JT. Correlation of interface chemistry to electrical properties of metal contacts on diamond Diamond and Related Materials. 2: 963-969. DOI: 10.1016/0925-9635(93)90259-5 |
0.341 |
|
| 1993 |
Bade JP, Sahaida SR, Stoner BR, von Windheim JA, Glass JT, Miyata K, Nishimura K, Kobashi K. Fabrication of diamond thin-film thermistors for high-temperature applications Diamond and Related Materials. 2: 816-819. DOI: 10.1016/0925-9635(93)90230-Y |
0.343 |
|
| 1993 |
Tachibana T, Glass JT, Thompson DG. Titanium carbide rectifying contacts on boron-doped polycrystalline diamond Diamond and Related Materials. 2: 37-40. DOI: 10.1016/0925-9635(93)90139-S |
0.304 |
|
| 1993 |
von Windheim JA, Sivazlian F, McClure MT, Glass JT, Prater JT. Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch Diamond and Related Materials. 2: 438-442. DOI: 10.1016/0925-9635(93)90097-L |
0.375 |
|
| 1993 |
Stoner BR, Ma GH, Wolter SD, Zhu W, Wang YC, Davis RF, Glass JT. Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition Diamond and Related Materials. 2: 142-146. DOI: 10.1016/0925-9635(93)90045-4 |
0.382 |
|
| 1992 |
Tachibana T, Williams BE, Glass JT. Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. II. Titanium contacts: A carbide-forming metal. Physical Review. B, Condensed Matter. 45: 11975-11981. PMID 10001215 DOI: 10.1103/Physrevb.45.11975 |
0.349 |
|
| 1992 |
Stoner BR, Windheim JAv, Glass JT. Electrical Conductivity as a Function of Temperature of Diamond films Grown by Downstream Microwave Plasma Chemical Vapor Deposition Mrs Proceedings. 270. DOI: 10.1557/Proc-270-413 |
0.367 |
|
| 1992 |
Wolter SD, Stoner BR, Ma GM, Glass JT. In-Vacuo Surface Analytical Study of Diamond Nucleation on Copper Vs. Silicon Mrs Proceedings. 270. DOI: 10.1557/Proc-270-347 |
0.373 |
|
| 1992 |
Sivazlian FR, von Windheim JA, Glass J. Diamond Growth in an Oxy-Acetylene Flame by an Alternating Gas Ratio Technique Mrs Proceedings. 270. DOI: 10.1557/Proc-270-329 |
0.319 |
|
| 1992 |
McClure MT, von Windheim JA, Glass JT, Prater JT. Early Nucleation of Diamond in a Combustion Flame Mrs Proceedings. 270. DOI: 10.1557/Proc-270-323 |
0.374 |
|
| 1992 |
Fenner D, Li O, Morrison P, Cosgrove J, Lynds L, Johansson M, Stoner B, Glass J, Xu P, Zhang H. Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon Mrs Proceedings. 268. DOI: 10.1557/Proc-268-235 |
0.347 |
|
| 1992 |
Angus JC, Sunkara M, Sahaida SR, Glass JT. Twinning and faceting in early stages of diamond growth by chemical vapor deposition Journal of Materials Research. 7: 3001-3009. DOI: 10.1557/Jmr.1992.3001 |
0.336 |
|
| 1992 |
Von Windheim JA, Glass JT. Improved uniformity and selected area deposition of diamond by the oxy-acetylene flame method Journal of Materials Research. 7: 2144-2150. DOI: 10.1557/Jmr.1992.2144 |
0.38 |
|
| 1992 |
Stoner BR, Glass JT, Williams BE, Wolter SD, Nishimura K. In situ growth rate measurement and nucleation enhancement for microwave plasma CVD of diamond Journal of Materials Research. 7: 257-260. DOI: 10.1557/Jmr.1992.0257 |
0.398 |
|
| 1992 |
Stoner BR, Ma GHM, Wolter SD, Glass JT. Characterization of bias-enhanced nucleation of diamond on silicon by invacuo surface analysis and transmission electron microscopy Physical Review B. 45: 11067-11084. DOI: 10.1103/Physrevb.45.11067 |
0.423 |
|
| 1992 |
Stoner BR, Glass JT. Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition Applied Physics Letters. 60: 698-700. DOI: 10.1063/1.106541 |
0.371 |
|
| 1992 |
Das K, Venkatesan V, Miyata K, Dreifus DL, Glass JT. A review of the electrical characteristics of metal contacts on diamond Thin Solid Films. 212: 19-24. DOI: 10.1016/B978-0-444-89162-4.50048-8 |
0.367 |
|
| 1992 |
Wang XH, Ma GHM, Zhu W, Glass JT, Bergman L, Turner KF, Nemanich RJ. Effects of boron doping on the surface morphology and structural imperfections of diamond films Diamond and Related Materials. 1: 828-835. DOI: 10.1016/0925-9635(92)90109-2 |
0.421 |
|
| 1992 |
Stoner BR, Glass JT, Bergman L, Nemanich RJ, Zoltal LD, Vandersande JW. Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD Journal of Electronic Materials. 21: 629-634. DOI: 10.1007/Bf02655431 |
0.37 |
|
| 1991 |
Turner KF, Stoner BR, Bergman L, Glass JT, Nemanich RJ. Observation of surface modification and nucleation during deposition of diamond on silicon by scanning tunneling microscopy Journal of Applied Physics. 69: 6400-6405. DOI: 10.1063/1.348843 |
0.368 |
|
| 1991 |
Nishimura K, Das K, Glass JT. Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor deposition Journal of Applied Physics. 69: 3142-3148. DOI: 10.1063/1.348582 |
0.401 |
|
| 1991 |
Geis MW, Smith HI, Argoitia A, Angus J, Ma GHM, Glass JT, Butler J, Robinson CJ, Pryor R. Large-area mosaic diamond films approaching single-crystal quality Applied Physics Letters. 58: 2485-2487. DOI: 10.1063/1.104851 |
0.369 |
|
| 1991 |
Ma GHM, Williams BE, Glass JT, Prater JT. Analysis via transmission electron microscopy of the quality of diamond films deposited from the vapor phase Diamond and Related Materials. 1: 25-32. DOI: 10.1016/0925-9635(91)90008-X |
0.406 |
|
| 1991 |
Miyauchi S, Kumagai K, Miyata K, Nishimura K, Kobashi K, Nakaue A, Glass JT, Buckley-Golder IM. Microfabrication of diamond films: selective deposition and etching Surface and Coatings Technology. 47: 465-473. DOI: 10.1016/0257-8972(91)90312-K |
0.391 |
|
| 1990 |
Ma GHM, Lee YH, Glass JT. Electron microscopic characterization of diamond films grown on Si by bias-controlled chemical vapor deposition Journal of Materials Research. 5: 2367-2377. DOI: 10.1557/Jmr.1990.2367 |
0.397 |
|
| 1990 |
Williams BE, Kong HS, Glass JT. Electron microscopy of vapor phase deposited diamond Journal of Materials Research. 5: 801-810. DOI: 10.1557/Jmr.1990.0801 |
0.363 |
|
| 1990 |
Wang YC, Kong HS, Glass JT, Davis RF, More KL. Effect of Substrate Orientation on Interfacial and Bulk Character of Chemically Vapor Deposited Monocrystalline Silicon Carbide Thin Films Journal of the American Ceramic Society. 73: 1289-1296. DOI: 10.1111/J.1151-2916.1990.Tb05193.X |
0.398 |
|
| 1990 |
More KL, Kong+ HS, Glass JT, Davis RF. Electron Microscopy of Defects in Epitaxical beta-SiC Thin Films Grown on Silicon and Carbon {0001} Faces of alpha-SiC Substrates Journal of the American Ceramic Society. 73: 1283-1288. DOI: 10.1111/J.1151-2916.1990.Tb05192.X |
0.404 |
|
| 1990 |
Shroder RE, Nemanich RJ, Glass JT. Analysis of the composite structures in diamond thin films by Raman spectroscopy Physical Review B. 41: 3738-3745. DOI: 10.1103/Physrevb.41.3738 |
0.359 |
|
| 1990 |
Lee YH, Bachmann KJ, Glass JT, LeGrice YM, Nemanich RJ. Vapor deposition of diamond thin films on various substrates Applied Physics Letters. 57: 1916-1918. DOI: 10.1063/1.104011 |
0.412 |
|
| 1990 |
Lee YH, Richard PD, Bachmann KJ, Glass JT. Bias-controlled chemical vapor deposition of diamond thin films Applied Physics Letters. 56: 620-622. DOI: 10.1063/1.102716 |
0.422 |
|
| 1990 |
Williams BE, Glass JT, Davis RF, Kobashi K. Analysis of defect structures and substrate/film interfaces of diamond thin films Journal of Crystal Growth. 99: 1168-1176. DOI: 10.1016/S0022-0248(08)80102-9 |
0.402 |
|
| 1990 |
Buckley-Golder IM, Chalker PR, Glass JT, Kobashi K, Nakaue A. Determination of impurity dopant distributions in diamond films by SIMS Carbon. 28: 801. DOI: 10.1016/0008-6223(90)90311-L |
0.344 |
|
| 1990 |
Kobashi K, Nakaue A, Glass JT, Buckley-Golder IM. Properties and applications of vapor grown diamond Carbon. 28: 756-757. DOI: 10.1016/0008-6223(90)90272-Z |
0.311 |
|
| 1989 |
Nishimura K, Das K, Iwase M, Glass JT, Kobashi K. Electrical Contacts to Polycrystalline B Doped Diamond Films Mrs Proceedings. 162. DOI: 10.1557/Proc-162-341 |
0.363 |
|
| 1989 |
LeGrice YM, Buehler EC, Nemanich RJ, Glass JT, Kobashi K, Jansen F, Machonkin MA, Tsai CC. Infrared Characterization of the Hydrogen Environments in Diamond Thin Films Mrs Proceedings. 162. DOI: 10.1557/Proc-162-267 |
0.332 |
|
| 1989 |
Lee YH, Ma G, Bachmann KJ, Glass JT. Bias Controlled Hot Filament Chemical Vapor Deposition of Diamond Thin Film on Various Substrates Mrs Proceedings. 162. DOI: 10.1557/Proc-162-119 |
0.435 |
|
| 1989 |
Williams BE, Glass JT. Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures Journal of Materials Research. 4: 373-384. DOI: 10.1557/Jmr.1989.0373 |
0.407 |
|
| 1989 |
Kong HS, Glass JT, Davis RF. Growth rate, surface morphology, and defect microstructures of β—SiC films chemically vapor deposited on 6H—SiC substrates Journal of Materials Research. 4: 204-214. DOI: 10.1557/Jmr.1989.0204 |
0.379 |
|
| 1989 |
Kobashi K, Nishimura K, Miyata K, Kawate Y, Glass JT, Williams BE. Surface morphology and defect structures in microwave cvd diamond films Proceedings of Spie - the International Society For Optical Engineering. 969: 159-167. DOI: 10.1117/12.948165 |
0.302 |
|
| 1989 |
Ryu J, Kim HJ, Glass JT, Davis RF. The effects of thermal annealing on the microstructural, optical and electrical properties of beta silicon carbide films implanted with boron or nitrogen Journal of Electronic Materials. 18: 157-165. DOI: 10.1007/Bf02657402 |
0.317 |
|
| 1988 |
Glass JT, Wang YC, Kong HS, Davis RF. An Investigation of the Heteroepitaxial Growth of Beta—silicon Carbide Thin Filmson Silicon Substrates Mrs Proceedings. 116. DOI: 10.1557/Proc-116-337 |
0.389 |
|
| 1988 |
Kong HS, Wang YC, Glass JT, Davis RF. The effect of off-axis si (100) substrates on the defect structure and electrical properties of β-sic thin films Journal of Materials Research. 3: 521-530. DOI: 10.1557/Jmr.1988.0521 |
0.356 |
|
| 1988 |
Nemanich RJ, Glass JT, Lucovsky G, Shroder RE. Raman scattering characterization of carbon bonding in diamond and diamondlike thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1783-1787. DOI: 10.1116/1.575297 |
0.37 |
|
| 1988 |
Williams BE, Glass JT, Davis RF, Kobashi K, Horiuchi T. Summary Abstract: Structural and chemical characterization of diamond films and diamond-substrate interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1819-1820. DOI: 10.1116/1.575261 |
0.381 |
|
| 1988 |
Kim HJ, Kong H, Edmond JA, Ryu J, Palmour J, Carter CH, Glass JT, Davis RF. Summary Abstract: Epitaxial growth, doping, and analytical characterization of monocrvstalline beta-SiC semiconductor thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1954-1956. DOI: 10.1116/1.575214 |
0.341 |
|
| 1988 |
Kong HS, Glass JT, Davis RF. Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates Journal of Applied Physics. 64: 2672-2679. DOI: 10.1063/1.341608 |
0.391 |
|
| 1988 |
Kong HS, Jiang BL, Glass JT, Rozgonyi GA, More KL. An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates Journal of Applied Physics. 63: 2645-2650. DOI: 10.1063/1.341004 |
0.347 |
|
| 1988 |
Davis RF, Sitar Z, Williams BE, Kong HS, Kim HJ, Palmour JW, Edmond JA, Ryu J, Glass JT, Carter CH. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide Materials Science and Engineering B. 1: 77-104. DOI: 10.1016/0921-5107(88)90032-3 |
0.398 |
|
| 1987 |
Kong H, Kim HJ, Edmond JA, Palmour JW, Ryu J, Carter CH, Glass JT, Davis RF. Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001) Mrs Proceedings. 97. DOI: 10.1557/Proc-97-233 |
0.323 |
|
| 1987 |
Kong HS, Palmour JW, Glass JT, Davis RF. Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition Applied Physics Letters. 51: 442-444. DOI: 10.1063/1.98416 |
0.329 |
|
| 1986 |
Kong HS, Glass JT, Davis RF, Nutt SR. Growth and Characterization of Chemically Vapor Deposited Beta-Sic Epilayers on 6H Alpha-Sic Substrates Mrs Proceedings. 77. DOI: 10.1557/Proc-77-405 |
0.392 |
|
| 1986 |
Kong HS, Glass JT, Davis RF. Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition Applied Physics Letters. 49: 1074-1076. DOI: 10.1063/1.97479 |
0.387 |
|
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