Year |
Citation |
Score |
2017 |
Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). The Journal of Chemical Physics. 146: 052820. PMID 28178835 DOI: 10.1063/1.4975081 |
0.343 |
|
2016 |
Xu D, Chu K, Diaz JA, Ashman MD, Komiak JJ, Pleasant LMM, Vera A, Seekell P, Yang X, Creamer C, Nichols KB, Duh KHG, Smith PM, Chao PC, Dong L, et al. 0.1-μm InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess Ieee Transactions On Electron Devices. 63: 3076-3083. DOI: 10.1109/Ted.2016.2579160 |
0.553 |
|
2016 |
Chou H, O'Connor E, O'Mahony A, Povey IM, Hurley PK, Dong L, Ye PD, Afanas'ev V, Houssa M, Stesmans A. Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3 Journal of Applied Physics. 120. DOI: 10.1063/1.4971178 |
0.326 |
|
2016 |
Sardashti K, Hu KT, Tang K, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Dong L, Fruhberger B, Kummel AC. Nitride passivation of the interface between high-k dielectrics and SiGe Applied Physics Letters. 108. DOI: 10.1063/1.4939460 |
0.33 |
|
2015 |
Wu H, Si M, Dong L, Gu J, Zhang J, Ye PD. Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm Ieee Transactions On Electron Devices. 62: 1419-1426. DOI: 10.1109/Ted.2015.2412878 |
0.642 |
|
2015 |
Xu D, Chu KK, Diaz JA, Ashman M, Komiak JJ, Pleasant LM, Creamer C, Nichols K, Duh KHG, Smith PM, Chao PC, Dong L, Ye PD. 0.1-μm atomic layer deposition Al2O3 passivated InAlN/GaN high electron-mobility transistors for E-band power amplifiers Ieee Electron Device Letters. 36: 442-444. DOI: 10.1109/Led.2015.2409264 |
0.574 |
|
2013 |
Wang X, Dong L, Zhang J, Liu Y, Ye PD, Gordon RG. Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density. Nano Letters. 13: 594-9. PMID 23294262 DOI: 10.1021/Nl3041349 |
0.559 |
|
2013 |
Dong L, Wang XW, Zhang JY, Li XF, Gordon RG, Ye PD. GaAs enhancement-mode NMOSFETs enabled by atomic layer epitaxial La 1.8Y0.2O3 as dielectric Ieee Electron Device Letters. 34: 487-489. DOI: 10.1109/Led.2013.2244058 |
0.563 |
|
2013 |
Xu K, Sio H, Kirillov OA, Dong L, Xu M, Ye PD, Gundlach D, Nguyen NV. Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry Journal of Applied Physics. 113: 24504. DOI: 10.1063/1.4774038 |
0.328 |
|
2012 |
Chou HY, Afanas'ev VV, Houssa M, Stesmans A, Dong L, Ye PD. Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al 2O 3 Applied Physics Letters. 101. DOI: 10.1063/1.4747797 |
0.301 |
|
2012 |
Liu Q, Dong L, Liu Y, Gordon R, Ye PD, Fay P, Seabaugh A. Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4. DOI: 10.1016/J.Sse.2012.05.044 |
0.518 |
|
2008 |
Sun Q, Zhang C, Dong L, Shi Y, Ding S, Zhang DW. Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate Journal of Applied Physics. 103: 114102. DOI: 10.1063/1.2938073 |
0.342 |
|
2008 |
Dong L, Sun Q, Shi Y, Liu H, Wang C, Ding S, Zhang DW. Quantum chemical study of the initial surface reactions of atomic layer deposition GaAs for photonic crystal fabrication Applied Physics Letters. 92: 111105. DOI: 10.1063/1.2901880 |
0.339 |
|
2008 |
Sun Q, Shi Y, Dong L, Liu H, Ding S, Zhang DW. Impact of germanium related defects on electrical performance of hafnium oxide Applied Physics Letters. 92: 102908. DOI: 10.1063/1.2883944 |
0.336 |
|
2008 |
Sun Q, Dong L, Shi Y, Liu H, Ding S, Zhang DW. Atomic scale study of the degradation mechanism of boron contaminated hafnium oxide Applied Physics Letters. 92: 52907. DOI: 10.1063/1.2841658 |
0.346 |
|
Show low-probability matches. |